CN1051880C - Bipolar integrated circuit with VR-tube and manufacturing method thereof - Google Patents
Bipolar integrated circuit with VR-tube and manufacturing method thereof Download PDFInfo
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- CN1051880C CN1051880C CN97106766A CN97106766A CN1051880C CN 1051880 C CN1051880 C CN 1051880C CN 97106766 A CN97106766 A CN 97106766A CN 97106766 A CN97106766 A CN 97106766A CN 1051880 C CN1051880 C CN 1051880C
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Abstract
The present invention relates to a manufacturing method of a bipolar integrated circuit with a voltage regulator (VR) tube, which is compatible with a manufacturing process of a common bipolar integrated circuit. The present invention is characterized in that a two-step injection method is adopted, wherein a base region of a bipolar transistor is formed in the first step; one electrode of the VR tube is formed by using different dosages in the other step, and an injection rate and the depth of a doped region are controlled so as to determine the regulated voltage value of the VR tube. Therefore, the circuit of the present invention comprises a semiconductor base sheet, the base sheet is a first conducting type substrate, a second conducting type epitaxial layer is epitaxially grown on the surface of the substrate, and the epitaxial layer is isolated so as to form a collecting electrode of a second conducting type bipolar transistor or a base plate of a first conducting type transistor. The present invention is characterized in that a plurality of first conducting type regions are manufactured in certain regions on the epitaxial layer by doping; the regions form a base electrode of the second conducting type transistor, a collecting electrode and an emitting electrode of the first conducting type transistor, and one electrode of a voltage regulator diode.
Description
The present invention relates to a kind of bipolar integrated circuit and manufacture method thereof.
Usually be not to be with voltage-stabiliser tube in the bipolar integrated circuit.When needing to use voltage-stabiliser tube in the system, then to outside universal integrated circuit, reconnect the voltage-stabiliser tube of discrete component, as write by Robert J.Traister, by California, USA Academic Press, Inc. in " Linear IntegratedCircuit Application Manual " book of publishing in 1989 the 11st page go up described like that.So not only increase the number of the used element of system, increased the volume of system, reduced the reliability and the confidentiality of system.
The purpose of this invention is to provide and a kind of voltage-stabiliser tube and common bipolar integrated circuit are integrated into a method on the integrated circuit simultaneously with compatible technology, and adopt this method to produce a kind of bipolar integrated circuit that has voltage-stabiliser tube, to satisfy the needs of some application-specific integrated circuit (ASIC)s.
The present invention is achieved in that its manufacture method system adopts the method compatible mutually with the manufacturing process of common bipolar integrated circuit, promptly comprise common process for preparing bipolar IC, contain the base forward step in this manufacturing process, it is characterized in that adopting two step injection methods; Once form the bipolar transistor base; Another time is a utmost point that forms voltage-stabiliser tube with various dose, and control injection rate and the doped region degree of depth are to determine the stable voltage of voltage-stabiliser tube.
Further, the injection rate of the voltage-stabiliser tube in the method for the present invention and the control of the doped region degree of depth, its steps in sequence is base propelling, voltage-stabiliser tube photoetching, voltage-stabiliser tube injects and voltage-stabiliser tube advances, and the base that above-mentioned two steps advance the time sum to equal in the common process for preparing bipolar IC advances the time.
Bipolar integrated circuit according to the method for the invention described above is made also has a semiconductor chip, and this substrate is called the substrate of first conductivity type again.On this substrate surface through epitaxial growth the epitaxial loayer of second conductivity type.This epitaxial loayer is through isolating the base stage of the collector electrode or first conductive-type transistor that promptly constitute ambipolar second conductive-type transistor.It is characterized in that some zone produces the zone of some first conductivity types on this epitaxial loayer through overdoping.These zones constitute base stage and the emitter and collector of first conductive-type transistor and a utmost point of voltage-stabiliser tube of second conductive-type transistor.Extremely go up at one of the base region of second conductive-type transistor and voltage-stabiliser tube, through the thin layer of preparation second conductivity type that mixes, with the emitter that constitutes second conductive-type transistor and another utmost point of voltage-stabiliser tube.In the present invention in the bipolar integrated circuit of being touched upon, though the base stage of the second above-mentioned conductive-type transistor and voltage-stabiliser tube one extremely conduction type is identical, the doping content difference.The doping content in the territory, one polar region of voltage-stabiliser tube is determined by the burning voltage required value of voltage-stabiliser tube.Last last metal line work can be undertaken by the known mode of those skilled in the art.The base region that the present invention is characterized in second conductive-type transistor, one utmost point of the emitter and collector of first conductive-type transistor and voltage-stabiliser tube is with forming simultaneously with a lithography corrosion process, and just the impurity dose of voltage-stabiliser tube electrode district injection is different with other two zones.The present invention adopts the method with common bipolar integrated circuit compatibility, and voltage stabilizing didoe is integrated on the bipolar integrated circuit simultaneously.
Advantage of the present invention is: 1. adopt the technology compatible mutually with existing common bipolar integrated circuit, and technology maturation, easy to implement.2. because voltage-stabiliser tube is integrated on the bipolar integrated circuit, help reducing volume; Help maintaining secrecy, prevent that circuit from being copied; Help reducing cost.
Accompanying drawing of the present invention is simply described as follows:
Fig. 1 is a manufacture method schematic flow sheet of the present invention.
Fig. 2 is the generalized section of each element of bipolar integrated circuit of the present invention's band voltage stabilizing didoe of touching upon.
Provide one of the present invention embodiment preferably according to Fig. 1～Fig. 2 below.
Should be noted that each accompanying drawing only is a schematic diagram.For example: the element that only drawn in each isolated island among Fig. 2, in fact not only have only an element in each isolated island.Each element of circuit does not draw in true ratio.
As can be seen from Fig. 1, the technological process of present embodiment is roughly as follows, and promptly its steps in sequence is:
Pre-oxygen 31, N+ buries photoetching 32, N+ buries and injects 33, N+ buries annealing 34, under isolate photoetching 35, following isolation injects 36, following isolation annealing 37, extension 38, isolation oxidation 39, isolate photoetching 40, isolate and inject 41, isolate and advance 42, base oxidation 43, base photoetching 44, the base injects 45, the base advances 46, voltage-stabiliser tube photoetching 47, voltage-stabiliser tube injects 48, voltage-stabiliser tube advances 49, emitter region photoetching 50, phosphorus 51 is expanded in the emitter region, emitter region oxidation 52, fairlead photoetching 53, sputtered aluminum 54, aluminium anti-carves 55, passivation layer deposition 56, pressure head photoetching 57, alloying 58, test 59.
The process characteristic of this implementation column is that to advance be to settle at one go in the base in the former technology, and in this technology the 46th step be that the base is advanced into 2/5 of former base junction depth earlier, do again that the voltage-stabiliser tube photoetching of 47 steps, 48 step voltage-stabiliser tubes are injected, 49 step voltage-stabiliser tubes advance.The 46th base propelling time in step added that the time that the 49th step voltage-stabiliser tube advances equaled total base propelling time of former technology.So just on the basis of former technology, use the method with former process compatible, voltage-stabiliser tube is integrated on the bipolar integrated circuit, made the bipolar integrated circuit that has voltage-stabiliser tube.
As can be seen from Figure 2, bipolar integrated circuit has a semiconductor chip.Semiconductor chip is called substrate again.This substrate is first conductivity type (being the P type in the present embodiment), having some at regional area is the buried regions 12 of buried regions zone 2 and first conductivity type of second conductivity type, grown the epitaxial loayer 3 of one deck second conductivity type then with the method for extension, the semiconductor of whole epitaxial loayer 3 usefulness first conductivity type is isolated into " island " of several second conductivity types.Among Fig. 1 and Fig. 24 is isolation channel.Isolation channel 4 is isolated into several second conductivity types (N type) island 5 with epitaxial loayer 3.Element in the bipolar integrated circuit is processing and preparing in these islands 5 mainly.From left to right be to be to be to be exactly feature voltage stabilizing didoe 9 of the present invention in 8, the four islands 5 of horizontal pnp transistor in 7, the three islands 5 of longitudinal pnp transistor in 6, the second islands 5 of vertical npn transistor in first island 5.In each island 5, at first make some p type island regions territory.In vertical npn transistor 6, it is the transistorized base stage 13 of this npn; In longitudinal pnp transistor 7, it is the transistorized emitter 14 of this pnp; In horizontal pnp transistor 8, it is transistorized emitter 15 of this pnp and collector electrode 16; And in the voltage stabilizing didoe 9 of feature of the present invention, it constitutes the positive pole 17 of this voltage stabilizing didoe.Prepare several N type zones in each island 5 again, in vertical npn transistor 6, they constitute this transistorized emitter 18 and collector electrode 19; In longitudinal pnp transistor 7, it constitutes this transistorized base stage 20; In horizontal pnp transistor 8, it constitutes this transistorized base stage 21; In the voltage stabilizing didoe 9 as feature of the present invention, it constitutes the negative pole 22 of this voltage-stabiliser tube.
Voltage stabilizing didoe 9 and the base emitter diode that vertically is made of emitter 18 and base stage 13 in the npn transistor 6 structurally are identical, but their reverse breakdown voltage is then because the doping content in the base stage 13 in voltage stabilizing didoe anodal 17 and the vertical npn transistor 6 is different and different.We can know from semiconductor physics, and the reverse breakdown voltage of semiconductor diode depends on pn knot light dope impurity concentration and distribution situation on one side.Light dope doping content on one side is high more, and its reverse breakdown voltage (its burning voltage when diode is done the voltage stabilizing didoe use) is just low more.In the integrated circuit that the present invention touched upon, vertically the negative pole 22 of emitter 18 in the npn transistor 6 and voltage-stabiliser tube 9 forms in process for making simultaneously, so its doping content and distribute identical.When therefore the burning voltage of voltage stabilizing didoe required to be higher than the Base-Emitter reverse breakdown voltage of vertical npn transistor 6, the doping content in p type island region territory 17 just was lower than the doping content in p type island region territory 13; Otherwise then the doping content in p type island region territory 17 just is higher than the doping content in p type island region territory 13.The burning voltage of voltage stabilizing didoe 9 then is lower than the Base-Emitter reverse breakdown voltage of vertical npn transistor 6 in the present embodiment.
After above-mentioned work was all finished, the work of integrated circuit metal line can be undertaken by the conventional method known to the professional of this area, no longer described in detail here.
So just on the basis of original common process for preparing bipolar IC, use and the basic compatible method of former technology, voltage stabilizing didoe is integrated on the bipolar integrated circuit, made the bipolar integrated circuit that has voltage-stabiliser tube.
Claims (4)
1. a manufacture method that has the bipolar integrated circuit of voltage-stabiliser tube comprises common process for preparing bipolar IC, contains the base forward step in this manufacturing process, it is characterized in that adopting two step injection methods; Once form the bipolar transistor base; Another time is a utmost point that forms voltage-stabiliser tube with various dose, and control injection rate and the doped region degree of depth are to determine the stable voltage of voltage-stabiliser tube.
2. the manufacture method that has the bipolar integrated circuit of voltage-stabiliser tube according to claim 1, it is characterized in that the injection rate and the control of the doped region degree of depth of said voltage-stabiliser tube, its steps in sequence is base propelling, voltage-stabiliser tube photoetching, voltage-stabiliser tube injects and voltage-stabiliser tube advances, and the above-mentioned steps propelling time equals the base propelling time total in the common process for preparing bipolar IC.
3. the bipolar integrated circuit that has voltage-stabiliser tube that the manufacture method that has the bipolar integrated circuit of voltage-stabiliser tube according to claim 1 is made, comprise a semiconductor chip, this substrate is the substrate of first conductivity type, on the surface through the epitaxial loayer of epitaxial growth second conductivity type, this epitaxial loayer is led the base stage of transistor npn npn through isolating the collector electrode or first that promptly constitutes ambipolar second conductive-type transistor, it is characterized in that, some zone produces the zone of some first conductivity types through doping on this epitaxial loayer, and these zones constitute base stage and the collector and emitter of first conductive-type transistor and electrodes of voltage stabilizing didoe of second conductive-type transistors.
4. the bipolar integrated circuit that has voltage-stabiliser tube according to claim 3, the doping content of electrode that it is characterized in that said base implant concentration and voltage-stabiliser tube is different, and the doping content of voltage-stabiliser tube electrode district and junction depth are determined by the burning voltage required value of voltage-stabiliser tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97106766A CN1051880C (en) | 1997-12-08 | 1997-12-08 | Bipolar integrated circuit with VR-tube and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97106766A CN1051880C (en) | 1997-12-08 | 1997-12-08 | Bipolar integrated circuit with VR-tube and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1188329A CN1188329A (en) | 1998-07-22 |
| CN1051880C true CN1051880C (en) | 2000-04-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN97106766A Expired - Fee Related CN1051880C (en) | 1997-12-08 | 1997-12-08 | Bipolar integrated circuit with VR-tube and manufacturing method thereof |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0435331A2 (en) * | 1989-12-28 | 1991-07-03 | Sony Corporation | Semiconductor device and a method of fabricating the same |
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1997
- 1997-12-08 CN CN97106766A patent/CN1051880C/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0435331A2 (en) * | 1989-12-28 | 1991-07-03 | Sony Corporation | Semiconductor device and a method of fabricating the same |
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| CN1188329A (en) | 1998-07-22 |
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