CN105187014A - GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate - Google Patents
GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate Download PDFInfo
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- CN105187014A CN105187014A CN201510365228.5A CN201510365228A CN105187014A CN 105187014 A CN105187014 A CN 105187014A CN 201510365228 A CN201510365228 A CN 201510365228A CN 105187014 A CN105187014 A CN 105187014A
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Abstract
The invention discloses a GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on a BT substrate. The GaAs and LDMOS/GaN hybrid integrated microwave power amplifier comprises the BT substrate and microwave power amplifier circuits integrated on the surface of and inside the BT substrate, wherein the microwave power amplifier circuits comprise GaAs power amplifiers and LDMOS/GaN power amplifiers which are cascaded in sequence. The BT substrate is taken as a substrate of the microwave power amplifier circuits, and the advantages of GaAs and LDMOS/GaN power devices are combined. Impedance matching between a GaAs power amplifying chip and an LDMOS/GaN chip is directly finished by using an on-substrate low-impedance matching method, so that the GaAs and LDMOS/GaN devices of different processes can be well integrated on the same substrate in a hybrid way. Meanwhile, problems on the aspects of dielectric loss, expansion coefficient and the like in an existing high-frequency substrate are solved; the module integration degree is high; the encapsulation cost is low; the product size is small; on-chip matching is completely realized; and greater convenience is brought to application.
Description
Technical field
The present invention relates to microwave amplifier field, particularly relate to a kind of GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate.
Background technology
In the development of microwave high power amplifier, often need to take multi-stage power amplifier cascade operation, reach desirable gain and power output, and interior Match circuits is carried out to this Microwave Power Amplifier module, its input and output characteristic impedance is matched rated impedance, then adopt the encapsulation technology of hybrid microwave integrated circuit, multiple power device, interior match circuit etc. are packaged together.
For the designer of hybrid integrated Microwave Power Amplifier, two problems is had to need to pay the utmost attention to:
The first, the selecting of semiconductor device.In several main flow devices of design Microwave Power Amplifier, GaAs technology maturation, have high frequency, high-gain feature, but power output is not enough; LDMOS based on silicon materials has high-power, the characteristic such as high linearity, high working voltage, and be especially suitable for use as power output stage, but its gain is low, input and output matching circuit is complicated, packaging cost is very high; Third generation semi-conducting material GaN has the characteristics such as broad stopband, high breakdown field strength, high saturated electrons mobility, is highly suitable for high temperature, high frequency, high power applications, but its complex process, and cost is higher.
The second, the selecting of baseplate material.Substrate in power circuit is core component, it carries the key effects such as mechanical support, heat radiation and conduction, current alternative conventional substrate has LTCC LTCC, and traditional copper clad laminate is as glass cloth epoxy resin FR-4 and polytetrafluoroethylene PTFE etc.LTCC has excellent high frequency performance and heat conductivity, but difficulty of processing is large, and reliability is low, and fabrication cycle is long, and cost is very high; FR-4 price is low, adhesive force good, but its dielectric property and resistance to elevated temperatures poor; PTFE dielectric loss is little, and dielectric constant is low, be the high-frequency circuit plate substrate that application is more at present, and weak point is poor rigidity, and thermal coefficient of expansion is comparatively large, and not easily sticky metals, yield is not high.
Design the microwave power amplifier of a high-frequency, high-gain, high-power output, hybrid integrated circuit technique can be adopted from selecting of device, using GaAs device as driving stage, LDMOS/GaN device is as power output stage, design a kind of GaAs and LDMOS/GaN hybrid integrated microwave power amplifier, less size and more excellent performance can be obtained.But LDMOS/GaN power chip power output is very large, very high to the requirement of heat radiation, to the performance requirement also corresponding raising of substrate material.Therefore, in the selection of baseplate material, conventional conventional substrate is undesirable, needs the high-performance baseplate material that a kind of thermal endurance is high, loss is little, thermal coefficient of expansion is low.
Summary of the invention
For overcoming the shortcomings and deficiencies of above-mentioned prior art, the invention provides a kind of GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate.
Technical scheme of the present invention is:
A kind of GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate, comprise the microwave power amplifier circuit that BT substrate and surface and inside thereof are integrated, described microwave power amplifier circuit comprises GaAs power amplifier and the LDMOS/GaN power amplifier of cascade successively.
Preferably, described BT substrate comprises seven layers altogether, and from top to bottom, first and third, five, seven layers of BT substrate are respectively as first, second, third and fourth metal level, and second, four, six layers of BT substrate are BT resin medium layer; Also with reinforcing material between described each metal level and BT resin medium layer, make BT substrate through hot pressing; The upper and lower surface of described BT substrate scribbles anti-solder ink layer.
Preferably, described GaAs power amplifier and LDMOS/GaN power amplifier are the nude films of un-encapsulated, and adopt conductive silver glue to be fixed on described BT substrate, described nude film is connected with the passive circuit bonding of microwave power amplifier circuit by nation's alignment.
Preferably, the substrate below described GaAs power amplifier and LDMOS/GaN power amplifier beats via hole, respectively by the conducting of each layer grounded metal.
Preferably, intervalve matching circuit is connected with between the dual-stage amplifier GaAs power amplifier of described microwave power amplifier circuit and LDMOS/GaN power amplifier, described intervalve matching circuit adopts the method for low-resistance coupling, described intervalve matching circuit is arranged on described BT substrate, input is connected with the output of described GaAs power amplifier, output is connected with the input of described LDMOS/GaN power amplifier, directly prime output impedance is matched rear class input impedance.
Preferably, described LDMOS/GaN power amplifier output is connected with output matching circuit, and described output matching circuit is connected with described LDMOS/GaN power amplifier output.
Preferred further, first, second, third and fourth metal level of described BT substrate is copper foil layer.
Preferred further, described intervalve matching circuit and described output matching circuit are made up of discrete component, microstrip line and nation's alignment, and described discrete component is connected with described GaAs power amplifier and described LDMOS/GaN power amplifier by described nation alignment with microstrip line.
Advantage of the present invention is:
1. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate provided by the invention, GaAs power amplifier and LDMOS/GaN power amplifier are integrated on BT substrate, GaAs power amplifier and the cascade of LDMOS/GaN power amplifier, make described hybrid integrated microwave power amplifier have the advantage of GaAs and LDMOS/GaN two kinds of devices simultaneously, integrated circuit has high frequency, high-gain, the feature such as high-power, and integrated level is high, packaging cost is low, and product size is little.
2. because GaAs power amplifier and LDMOS/GaN power amplifier are integrated on BT substrate, BT substrate has excellent thermal endurance, long-term heat resisting temperature, thermal coefficient of expansion are low, make described GaAs and LDMOS/GaN hybrid integrated microwave power amplifier perfect heat-dissipating, under the heat dispersal situations of high-power chip, deformation is less likely to occur; BT substrate has low-k, low-dielectric loss, and microwave signal can be transmitted without distortion; BT substrate also has excellent insulating properties and mechanical property, makes GaAs and LDMOS/GaN hybrid integrated microwave power amplifier have more stability.
3. because the output impedance of GaAs power amplifier and the input impedance of LDMOS/GaN power amplifier are all only have the low-resistance of several ohm, therefore can no longer with conventional by the method for input and output impedance matching to 50 Ω, but adopt the method for low-resistance coupling: on described BT substrate, directly prime output impedance is matched rear class input impedance, and without the need to carrying out pre-matching in conventional LDMOS/GaN encapsulation, this method is convenient to design, and circuit structure is simpler.
In sum, GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate provided by the present invention, adopt a kind of substrate of BT copper-clad plate as microwave power amplifier circuit of new structure, in conjunction with the advantage of GaAs and LDMOS/GaN two kinds of power devices, on employing substrate, the method for low-resistance coupling directly completes the impedance matching between GaAs power amplifier chips and LDMOS/GaN power amplifier chips, can by the device hybrid integrated of GaAs and LDMOS/GaN two kinds of different process on same substrate, solve conventional highfrequency substrate well at dielectric loss, the problem of the aspects such as thermal coefficient of expansion, module integration degree is high, packaging cost is low, product size is little, realize coupling in chip completely, apply more convenient.
Accompanying drawing explanation
In order to be illustrated more clearly in the present invention or technical scheme of the prior art, below in conjunction with drawings and Examples, the invention will be further described:
Fig. 1 be the microwave power amplifier of the embodiment of the present invention circuit structure schematic diagram;
Fig. 2 is the equivalent circuit diagram of the intervalve matching circuit described in the embodiment of the present invention;
Fig. 3 is the equivalent circuit diagram of the output matching circuit described in the embodiment of the present invention;
Fig. 4 is the structural representation of a kind of embodiment of GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate of the embodiment of the present invention.
Embodiment
Just as described in the background section: the microwave power amplifier designing a high-frequency, high-gain, high-power output, hybrid integrated circuit technique can be adopted from selecting of device, using GaAs device as driving stage, LDMOS/GaN device, as power output stage, can obtain less size and more excellent performance.But LDMOS/GaN power chip power output is very large, very high to the requirement of heat radiation, to the performance requirement also corresponding raising of substrate material.Therefore, in the selection of baseplate material, conventional conventional substrate is undesirable, needs the high-performance baseplate material that a kind of thermal endurance is high, loss is little, thermal coefficient of expansion is low.
A kind of GaAs and LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate is embodiments provided based on this, comprise the microwave power amplifier circuit that BT substrate and surface and inside thereof are integrated, described microwave power amplifier circuit comprises GaAs power amplifier and the LDMOS/GaN power amplifier of cascade successively.
As shown in Figure 1, described microwave power amplifier, by dual-stage amplifier GaAs power amplifier, LDMOS/GaN power amplifier, with intervalve matching circuit, output matching circuit cascade composition, the input of described GaAs power amplifier and the output of LDMOS/GaN power amplifier are connected with electric capacity C1, C2 stopping direct current.Described intervalve matching circuit, output matching circuit, electric capacity C1, C2 and decoupling circuit are made up of discrete component, microstrip line and nation's alignment.Described GaAs power amplifier and LDMOS/GaN power amplifier are the nude films of un-encapsulated.And biasing circuit and decoupling circuit is also provided with between described GaAs power amplifier and LDMOS/GaN power amplifier.
As shown in Figure 2, described intervalve matching circuit is made up of C3, C4, C5 and inductance L 1 electric capacity, one end of described electric capacity C3 connects the output of prime GaAs power amplifier chips 1, the electric capacity C3 other end connects electric capacity C4 and C5 respectively, the other end ground connection of electric capacity C4, the other end of electric capacity C5 is connected with described inductance L 1, inductance L 1 and rear class LDMOS/GaN power amplifier chips 2 input be connected.
As shown in Figure 3, described output matching circuit is made up of C6, C7, C2, described electric capacity C6 one end connects output and the electric capacity C7 of LDMOS/GaN power amplifier chips 2, the other end ground connection of electric capacity C6, one end of described electric capacity C7 connects electric capacity C6 and described electric capacity C2, the other end ground connection of electric capacity C7, one end of described electric capacity C2 connects electric capacity C7, and the other end of electric capacity C2 is connected with output interface.
In order to make those skilled in the art person understand the present invention program better, below in conjunction with accompanying drawing 4 and embodiment, the present invention is described in further detail.
Fig. 4 is the structural representation of a kind of execution mode of GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate of the embodiment of the present invention.Described GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate, comprise the microwave power amplifier circuit that BT substrate 1 and surface and inside thereof are integrated, described microwave power amplifier circuit comprises GaAs power amplifier chips 2 and the LDMOS/GaN power amplifier chips 3 of cascade successively.
In the hybrid integrated microwave power amplifier described in the present embodiment, described substrate is bi-maleimide modified cyanate resin (BT) substrate.Bi-maleimide modified cyanate resin (BT) substrate belongs to a kind of special high-performance baseplate material, since Mitsubishi gas chemical company developed through Chemical Bayer Ltd. technological guidance, produced nineteen eighty-two, more and more applied in making high-performance, the design of high-frequency circuit plate.
Described BT substrate 1 comprises seven layers altogether, from top to bottom, first and third, five, seven layers of BT substrate 1 are that second, four, six layers of the first metal layer 7, second metal level 9, the 3rd metal level 11 and the 4th metal level 13, the BT substrate 1 be made up of copper foil layer are respectively BT resin medium layer the 6, the 2nd BT resin medium layer 8 and a 3rd BT resin medium layer 10 respectively.Also with reinforcing material between above-mentioned each metal level and BT resin medium layer, the upper and lower surface making BT substrate 1, BT substrate 1 through hot pressing scribbles anti-solder ink layer 12.It should be noted that, the effect of described reinforcing material is the interface performance between reinforcement metal layer and resin bed, and the effect that anti-solder ink is keeps insulation and auxiliary welding.
Described GaAs power amplifier chips 2 and LDMOS/GaN power amplifier chips 3 are fixed on first layer metal layer 7, and the first metal layer 7 is microwave signal layer; Second metal level 9 is microwave signal stratum; 3rd metal level 11 is bus plane; 4th metal level 13 is total ground plane.It should be noted that, the use of metal level is herein the concrete mode of one of the present embodiment, and reality can unrestricted choice as required, and the present invention is not specifically limited this.
Described GaAs power amplifier chips 1 and LDMOS/GaN power amplifier chips 2 are nude films of un-encapsulated, adopting conductive silver glue to paste is fixed on described BT substrate 1, there is excellent conductivity and caking property, described nude film is connected with passive circuit by spun gold nation alignment, and welding quality stable is reliable, consistency good.It should be noted that, the present invention can also adopt other modes to be fixed on BT substrate by GaAs power amplifier chips 2 and LDMOS/GaN power amplifier chips 3, also other modes can be adopted to realize the electrical connection of described nude film and passive circuit, just above-mentioned two kinds of methods are effective, process costs is low, and the present invention is not specifically limited this.
Substrate below described GaAs power amplifier chips 2 and LDMOS/GaN power amplifier chips 3 is equipped with via hole 14 respectively, and the quantity of described via hole 14 is determined by the area of power amplifier chips, and object is coupled together by layer grounded metal each in BT substrate.
In described hybrid integrated microwave power amplifier of the present invention, intervalve matching circuit 4 is connected with between described GaAs power amplifier chips 2 and LDMOS/GaN power amplifier chips 3, the method that described intervalve matching circuit 4 adopts low-resistance to mate, described intervalve matching circuit 4 is arranged on described BT substrate 1, input is connected with the output of described GaAs power amplifier chips 2, and output is connected with the input of described LDMOS/GaN power amplifier chips 3.
In described hybrid integrated microwave power amplifier of the present invention, generally also comprise output matching circuit 5, the input of described output matching circuit 5 is connected with the output of LDMOS/GaN power amplifier chips 3.
Described intervalve matching circuit 4 or output matching circuit 5 are made up of discrete component, microstrip line and nation's alignment.Described discrete component mainly patch capacitor, chip inductor etc., described nation alignment has the distributed inductance with chip capacity matches impedances, can be equivalent to the inductance of match circuit.The pin of described GaAs power amplifier chips 2 and described LDMOS/GaN power amplifier chips 3 is connected on passive circuit by nation's alignment bonding.
The GaAs power amplifier chips of cascade and LDMOS/GaN power amplifier chips are integrated on same BT substrate by the present invention, form hybrid integrated microwave power amplifier, there is the advantage of GaAs and LDMOS/GaN two kinds of devices simultaneously, integrated circuit has high frequency, high-gain, the feature such as high-power, and integrated level is high, packaging cost is low, and product size is little.BT substrate has excellent thermal endurance, long-term heat resisting temperature, thermal coefficient of expansion are low, drastically increases the heat dispersion of integrated micro power amplifier, under the heat dispersal situations of high-power chip, deformation is less likely to occur; Described BT substrate also has low-k, low-dielectric loss, and microwave signal can be transmitted without distortion; Described BT substrate also has excellent insulating properties and mechanical property, makes described GaAs and LDMOS/GaN hybrid integrated microwave power amplifier have more stability.The output impedance of described GaAs power amplifier chips and the input impedance of described LDMOS/GaN power amplifier chips are all only have the low-resistance of several ohm, therefore can no longer with conventional by the method for input and output impedance matching to 50 Ω, but adopt the method for low-resistance coupling, prime output impedance is directly matched rear class input impedance by described BT substrate, and without the need to carrying out pre-matching in conventional LDMOS/GaN encapsulation, make the impedance between described GaAs power amplifier and LDMOS/GaN power amplifier be very easy to coupling.
Above-described embodiment, only for technical conceive of the present invention and feature are described, its object is to person skilled in the art can be understood content of the present invention and implement according to this, can not limit the scope of the invention with this.All modifications done according to the Spirit Essence of main technical schemes of the present invention, all should be encompassed within protection scope of the present invention.
Claims (8)
1. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate, comprise the microwave power amplifier circuit that BT substrate and surface and inside thereof are integrated, described microwave power amplifier circuit comprises GaAs power amplifier and the LDMOS/GaN power amplifier of cascade successively.
2. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 1, it is characterized in that: described BT substrate comprises seven layers altogether, from top to bottom, first and third, five, seven layers of BT substrate are respectively as first, second, third and fourth metal level, and second, four, six layers of BT substrate are BT resin medium layer; Also accompany reinforcing material between described each metal level and BT resin medium layer, make BT substrate through hot pressing, the upper and lower surface of BT substrate scribbles anti-solder ink layer.
3. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 2, it is characterized in that: described GaAs power amplifier and LDMOS/GaN power amplifier are the nude films of un-encapsulated, adopt conductive silver glue to be fixed on described BT substrate, described nude film is connected with the passive circuit bonding of microwave power amplifier circuit by nation's alignment.
4. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 3, it is characterized in that: the substrate below described GaAs power amplifier and LDMOS/GaN power amplifier beats via hole, respectively by the grounded metal conducting of each layer.
5. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 4, it is characterized in that: also comprise intervalve matching circuit, interstage matched between described GaAs power amplifier and LDMOS/GaN power amplifier adopts the method for low-resistance coupling, described intervalve matching circuit is arranged on described BT substrate, input is connected with the output of GaAs power amplifier, and output is connected with the input of described LDMOS/GaN power amplifier.
6. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 5, it is characterized in that: also comprise output matching circuit, described output matching circuit is arranged on BT substrate, and input is connected with described LDMOS/GaN power amplifier output.
7. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 2, is characterized in that: first, second, third and fourth metal level of described BT substrate is copper foil layer.
8. GaAs and the LDMOS/GaN hybrid integrated microwave power amplifier based on BT substrate according to claim 6, it is characterized in that: described intervalve matching circuit and described output matching circuit are made up of discrete component, microstrip line and nation's alignment, and described discrete component is connected with GaAs power amplifier and LDMOS/GaN power amplifier by nation's alignment with microstrip line.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110336539A (en) * | 2019-07-01 | 2019-10-15 | 北京遥感设备研究所 | A kind of Ku wave band high power burst pulse amplifier for fuse |
| CN110830053A (en) * | 2018-08-09 | 2020-02-21 | 株式会社村田制作所 | High-frequency module and communication device |
| CN113054962A (en) * | 2021-03-25 | 2021-06-29 | 苏州华太电子技术有限公司 | Cascode GaN power device and half-bridge application circuit thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1339175A (en) * | 1999-01-29 | 2002-03-06 | 科恩格森特系统股份有限公司 | Multiple chip module with integrated RF capabilities |
| CN1925148A (en) * | 2005-08-29 | 2007-03-07 | 新光电气工业株式会社 | Multilayer wiring substrate and method for manufacturing same |
| CN101211903A (en) * | 2006-12-29 | 2008-07-02 | 育霈科技股份有限公司 | RF module package structure and its forming method |
| CN102761317A (en) * | 2011-04-25 | 2012-10-31 | 株式会社东芝 | Pulse electric power amplification apparatus |
| CN103066932A (en) * | 2012-12-17 | 2013-04-24 | 广州慧智微电子有限公司 | Multistage radio frequency power amplifier circuit capable of reducing interference on ISM frequency band |
| CN203734626U (en) * | 2013-12-30 | 2014-07-23 | 成都玖信科技有限公司 | Super wideband power amplifier |
| CN204836090U (en) * | 2015-06-29 | 2015-12-02 | 苏州英诺迅科技股份有限公司 | GaAs and LDMOSGaN mix integrated microwave power amplifier based on BT base plate |
-
2015
- 2015-06-29 CN CN201510365228.5A patent/CN105187014A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1339175A (en) * | 1999-01-29 | 2002-03-06 | 科恩格森特系统股份有限公司 | Multiple chip module with integrated RF capabilities |
| CN1925148A (en) * | 2005-08-29 | 2007-03-07 | 新光电气工业株式会社 | Multilayer wiring substrate and method for manufacturing same |
| CN101211903A (en) * | 2006-12-29 | 2008-07-02 | 育霈科技股份有限公司 | RF module package structure and its forming method |
| CN102761317A (en) * | 2011-04-25 | 2012-10-31 | 株式会社东芝 | Pulse electric power amplification apparatus |
| CN103066932A (en) * | 2012-12-17 | 2013-04-24 | 广州慧智微电子有限公司 | Multistage radio frequency power amplifier circuit capable of reducing interference on ISM frequency band |
| CN203734626U (en) * | 2013-12-30 | 2014-07-23 | 成都玖信科技有限公司 | Super wideband power amplifier |
| CN204836090U (en) * | 2015-06-29 | 2015-12-02 | 苏州英诺迅科技股份有限公司 | GaAs and LDMOSGaN mix integrated microwave power amplifier based on BT base plate |
Non-Patent Citations (1)
| Title |
|---|
| 郭香华: ""微波混合集成宽带低噪声放大器的设计"", 《中国优秀硕士学位论文全文数据库信息科技辑》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110830053A (en) * | 2018-08-09 | 2020-02-21 | 株式会社村田制作所 | High-frequency module and communication device |
| CN110336539A (en) * | 2019-07-01 | 2019-10-15 | 北京遥感设备研究所 | A kind of Ku wave band high power burst pulse amplifier for fuse |
| CN113054962A (en) * | 2021-03-25 | 2021-06-29 | 苏州华太电子技术有限公司 | Cascode GaN power device and half-bridge application circuit thereof |
| CN113054962B (en) * | 2021-03-25 | 2024-03-19 | 苏州华太电子技术股份有限公司 | Co-source co-grid GaN power device and half-bridge application circuit thereof |
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