CN105185892A - LED lamp filament and preparation method therefor - Google Patents
LED lamp filament and preparation method therefor Download PDFInfo
- Publication number
- CN105185892A CN105185892A CN201510625790.7A CN201510625790A CN105185892A CN 105185892 A CN105185892 A CN 105185892A CN 201510625790 A CN201510625790 A CN 201510625790A CN 105185892 A CN105185892 A CN 105185892A
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- support
- sapphire substrate
- led
- sapphire
- led silk
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 139
- 239000010980 sapphire Substances 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 241000761557 Lamina Species 0.000 claims description 48
- 239000003292 glue Substances 0.000 claims description 48
- 239000000047 product Substances 0.000 claims description 20
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 229920001296 polysiloxane Polymers 0.000 claims description 11
- 238000004806 packaging method and process Methods 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- 229910052709 silver Inorganic materials 0.000 description 18
- 239000004332 silver Substances 0.000 description 18
- 238000010411 cooking Methods 0.000 description 9
- 239000000843 powder Substances 0.000 description 7
- 239000004922 lacquer Substances 0.000 description 6
- 239000011265 semifinished product Substances 0.000 description 6
- 238000007598 dipping method Methods 0.000 description 5
- 239000005030 aluminium foil Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses an LED lamp filament and a preparation method therefor. An LED lamp filament support is a metal half-packaged transparent sapphire support; the two ends of the support are adhered by groove-type metal conductive sheets and a sapphire substrate through conductive electrargol; grooves can be in contact with the substrate along three directions; the metal conductive sheets respecitvely serve as the positive electrode and the negative electrode which are serially connected with blue light chip sets of the lamp filaments, and the LED lamp filament is provided with three layers of phosphors. The LED lamp filament perfectly solves the phenomena of blue light leakage in the side face of the LED lamp filament, the easily cracked support at high temperatures and the like; accordant and uniform emergent light from each light-emitting surface of the LED lamp filament is realized; and the stability of the LED lamp filament at the high temperature state is improved.
Description
Technical field
The present invention relates to technical field of LED illumination, be specifically related to a kind of LED silk and preparation method thereof.
Background technology
LED light source will reach certain illuminance and illuminating area in the past, the optics of lens and so on need be installed additional, affect lighting effect, reduce the due energy-saving effect of LED, along with the research of technology and perfect, the full angle that present LED silk can realize 360 deg is luminous, and this wide-angle is luminous, do not need to add lens and just can realize three-dimensional light source, bring unprecedented lighting experience.LED silk can be applicable to the LED illumination products such as crystal pendant lamp, candle lamp, bulb lamp, wall lamp, these products can be widely used in the places such as museum, odeum, star hotel, supermarket, all kinds of service industry, business building, high-grade house ornamentation, exhibition center, conference hall, exhibition room, the small area analysis high voltage characteristics that LED silk has, its outstanding photoelectric properties can significantly reduce the heating of LED and the cost of driver.As publication number a kind of LED silk disclosed in the utility model patent of CN20438760U, it comprises the some pallets in horizontal array, the LED chip being fixed on tray center, adjacent LED chip connection metal line and packaging plastic, and extend to the pair of pins in outside, support adopts metal material, this LED silk is shaping in shaped mould strip, and packaging plastic is mixed by liquid-state epoxy resin and fluorescent material.At present, LED silk product mainly adopts metallic support, and its light transmittance is lower, and tow sides color distortion is large, and side light leak is relatively more serious, and basic and support welding two sections tightly adopts glue bond, poor heat stability.
Summary of the invention
In order to solve the problems of the technologies described above, the invention provides a kind of LED silk and preparation method thereof, LED silk support adopts metal half bag transparent sapphire support, support two ends are by the conductive silver glue adhesion of fluted body metallic laminas and sapphire substrate, groove can realize three directions and substantially contact, and metallic laminas is respectively the both positive and negative polarity series connection blue chip group of filament and arranges three layers of fluorophor.The LED silk perfection of this structure solves LED silk lateral emitting and leaks the phenomenons such as basket light and support easily ftracture at high operating temperatures, and it is evenly consistent and improve LED silk stability at high operating temperatures to realize each light-emitting area bright dipping of LED silk.
To achieve these goals, the present invention adopts following technical scheme.
A kind of LED silk, comprise filament support and sapphire substrate, sapphire substrate is equipped with multiple LED chip, the two ends of sapphire substrate are respectively connected with a metallic laminas, and filament support is metal half bag transparent sapphire support.
Preferably, described metal half bag transparent sapphire support adopts the Prof. Du Yucang sapphire of high transmission rate to make.
In above-mentioned arbitrary technical scheme preferably, the metal of described metal half bag transparent sapphire support is iron or copper product, and iron or copper product, after treatment before plating, adopt first nickel plating, rear silver-plated technique is prepared.
In above-mentioned arbitrary technical scheme preferably, described multiple LED chip is arranged in a linear on sapphire substrate, spaced apart certain spacing of two adjacent LED chips.
In above-mentioned arbitrary technical scheme preferably, described sapphire substrate is equipped with a row or multi-row LED chip group.
In above-mentioned arbitrary technical scheme preferably, die bond fluorescence primer is adopted to bond between described LED chip and described sapphire substrate.
In above-mentioned arbitrary technical scheme preferably, described die bond fluorescence primer comprises silicones and fluorescent material, and described die bond fluorescence primer adopts silicones and fluorescent material to be mixed with the ratio of 1:0.4.
In above-mentioned arbitrary technical scheme preferably, the two ends of described metal half bag transparent sapphire support are provided with groove.
In above-mentioned arbitrary technical scheme preferably, the groove that described metal half bag transparent sapphire support two ends are arranged and sapphire substrate, die bond fluorescence primer bond the glue bond that LED chip and sapphire substrate are formed, and three forms a snap-in structure.
In above-mentioned arbitrary technical scheme preferably, described metallic laminas is fluted body metallic laminas, uses conductive silver glue adhesion between fluted body metallic laminas and sapphire substrate, and this groove can realize three directions and contact with sapphire substrate.
In above-mentioned arbitrary technical scheme preferably, the metallic laminas at described sapphire substrate two ends is respectively the both positive and negative polarity series LED chipset of filament.
In above-mentioned arbitrary technical scheme preferably, described LED silk arranges three layers of fluorophor, and one deck fluorophor is fixed on above sapphire substrate, and two-layer fluorophor is coated in front and the back side of metal half bag transparent sapphire support respectively in addition.
The invention also discloses a kind of preparation method of LED silk, comprise the LED silk as above described in any one technical scheme, this preparation method comprises the steps:
Step one, makes support;
Step 2, substrate arranges LED chip;
Step 3, preparation die bond fluorescence primer;
Step 4, support, metallic laminas, substrate three are connected together;
Step 5, arranges three layers of fluorophor;
Step 6, dehumidifying, packaging.
In above-mentioned arbitrary technical scheme preferably, in described step one, adopt the Prof. Du Yucang sapphire of high transmission rate to make metal half bag transparent sapphire support, groove is set at the two ends of metal half bag transparent sapphire support.
In above-mentioned arbitrary technical scheme preferably, in described step one, the sapphire bar of length 30MM, width 0.8MM, thickness 0.4MM is selected placement, then at metallic laminas two ends groove conductive silver glue on point gum machine point, sapphire bar is placed in the metal groove of a little good conductive silver glue, note two ends front and back position, equal length need be stayed in two ends; Then semi-finished metal half bag transparent sapphire support is put into oven cooking cycle, baking condition is 150 degrees Celsius/2H.
In above-mentioned arbitrary technical scheme preferably, in described step 2, adopt sapphire substrate, sapphire substrate arranges a row or multi-row LED chip group, die bond fluorescence primer between LED chip and sapphire substrate.
In above-mentioned arbitrary technical scheme preferably, in described step 3, adopt silicones and fluorescent material to be fully uniformly mixed and make die bond fluorescence primer, the ratio of mixing is 1:0.4, to ensure to improve the phenomenon that blue light is leaked in the bright dipping of LED silk side while die bond fluorescence primer has sufficient cohesive force.
In above-mentioned arbitrary technical scheme preferably, the preparation process of described die bond fluorescence primer specifically comprises the steps:
(1) prepare die bond fluorescence primer, by the ratio of 0.4:1, yellow fluorescent powder is mixed with KER3000 type silicones primer, stir, then vacuumizing and defoaming;
(2) die bond fluorescence primer is put into bonder lacquer disk(-sc), then open lacquer disk(-sc), blue for the chip expanded film is put into wafer carrier; Check whether suction nozzle lacquer disk(-sc) normally works, and writes die bond program, start die bond operation; Die bond semi-finished product are put into oven cooking cycle, and baking condition is 160 DEG C/2H, after end to be baked, material is proceeded to bonding wire station;
(3) will complete unitary piece of material and put into bonding equipment magazine, and use the gold thread of 0.9mil diameter to check parameters, write bonding wire program, start bonding wire operation, ensure that solder joint is not inclined, broken string pulling force is not less than 6G;
(4) die bond fluorescence primer is prepared, according to a specific ratio YH628/YH538 fluorescent material is mixed with external sealant, the fluorescence primer after mixing is put into agitator, note 2700K/3000K/4000K/6000K different-colour, debug different fluorescence primers, notice that proportioning will adjust; Because the positive and negative light transmittance of blue chip is different, so filament double-edged fluorescence primer proportioning is different, the fluorescent glue at the back side is lower by 10% than the fluorescent glue concentration in front, will by positive and negative glue with on time point during pilot, ensure filament two sides solid colour, also will determine that color tolerance is less than 6SDCM; During batch production also, adopt elder generation's face glue o'clock sharp, enter oven cooking cycle, then put the back side, enter oven cooking cycle, baking condition is 150 DEG C/2H.
In above-mentioned arbitrary technical scheme preferably, in described step 4, die bond fluorescence primer bonding LED chip and sapphire substrate are formed with glue bond, and the two ends of metal half bag transparent sapphire support arrange groove, by original glue bond become glue bond and rack groove physical property by sapphire substrate card within it, form the syndeton of support, metallic laminas, sapphire substrate three engaging.
In above-mentioned arbitrary technical scheme preferably, in described step 4, sapphire substrate two ends respectively configure a metallic laminas, first metallic laminas bender is folded a groove, conductive silver glue is clicked and entered in groove, then sapphire substrate is put into groove, the sheet metal that groove both sides are holded up can clamp sapphire substrate, add the bonding of conductive silver glue and the thermal conductivity of conductive silver glue excellence, significantly can reduce the possibility that LED silk sapphire substrate at high temperature and two ends metallic laminas ftracture.
In above-mentioned arbitrary technical scheme preferably, in described step 4, the two ends of metal half bag transparent sapphire support are by the conductive silver glue adhesion of fluted body metallic laminas and sapphire substrate, the groove of metallic laminas can realize three directions and contact with sapphire substrate, and metallic laminas is respectively the both positive and negative polarity series connection blue chip group of filament.
In above-mentioned arbitrary technical scheme preferably, in described step 5, arrange three layers of fluorophor, be fixed on above sapphire substrate with one deck fluorophor, two-layer fluorophor is coated in front and the back side of metal half bag transparent sapphire support respectively in addition; Die bond fluorescence primer is mixed into the blue light that fluorophor makes LED chip side send and better goes out white light with phosphor excitation, and solution side goes out the phenomenon of blue light.
In above-mentioned arbitrary technical scheme preferably, in described step 6, finished product is put into blanking machine, be cut into the finished product filament of wall scroll, then entirely examine outward appearance and electrically.
In above-mentioned arbitrary technical scheme preferably, in described step 6, non-defective unit is put into baking box dehumidifying, dehumidifying condition is 60 degrees Celsius/6H.
In above-mentioned arbitrary technical scheme preferably, in described step 6, by completing the filament of dehumidifying operation by 300PCS/ box packaging, then 8 whole boxes are put into an aluminium foil bag, finally to aluminium foil bag vacuum-pumping and sealing.
LED silk of the present invention, comprise filament support and sapphire substrate, sapphire substrate is equipped with LED chip, the two ends of sapphire substrate are connected with metallic laminas, LED silk support adopts metal half bag transparent sapphire support, support two ends are by the conductive silver glue adhesion of fluted body metallic laminas and sapphire substrate, and groove can realize three directions and substantially contact, and metallic laminas is respectively the both positive and negative polarity series connection blue chip group of filament and arranges three layers of fluorophor.The LED silk perfection of this structure solves LED silk lateral emitting and leaks the phenomenons such as basket light and support easily ftracture at high operating temperatures, and it is evenly consistent and improve LED silk stability at high operating temperatures to realize each light-emitting area bright dipping of LED silk.
LED silk of the present invention adopts the Prof. Du Yucang sapphire support of high transmission rate, significantly promotes the light efficiency lifting that LED silk brings in application end; Die bond primer is mixed into the blue light that fluorophor makes LED chip side send and better goes out white light with phosphor excitation, and solution side goes out the phenomenon of blue light; At support two ends, groove is set, by original glue bond become glue bond and groove physical property by sapphire substrate card within it.
LED silk of the present invention and preparation method thereof, because what adopt when die bond operation is " fluorescence primer ", so larger on the colourity centrality impact of later stage point glue finished product, so need " fluorescence primer " glue amount of all boards be adjusted to closely, to improve the colourity concentration degree of finished product when operation.
LED silk of the present invention and preparation method thereof, metal half bag support improves the thermal stability of product to a great extent, and the yield of electric welding operation has a distinct increment when later stage finished product lamp assembling.But, because metal half bag support is fluted structure, so need to get on the ball adjustment at the tool of die bond, bonding wire.
LED silk of the present invention and preparation method thereof; three layers of fluorophor metal half bag filament; perfectly can substitute the models such as conventional incandescent such as C35/A60/A80/G45/G95/G125; the light efficiency of conventional incandescent is greatly about 10-20LM/W; and the lamp LED silk lamp of recent development coordinates the whole light effect of excellent power supply can reach 120LM/W, very large work is had to use to energy resource consumption and environmental protection.
Accompanying drawing explanation
Fig. 1 is the metal half bag transparent sapphire supporting structure schematic diagram of the preferred embodiment according to LED silk of the present invention;
Fig. 2 is the schematic cross-section of the metal half bag transparent sapphire supporting structure of a preferred embodiment according to LED silk of the present invention;
Fig. 3 is the LED silk structural representation sapphire substrate according to a preferred embodiment of LED silk of the present invention being equipped with LED chip;
Fig. 4 is the LED silk structural representation being bonded in sapphire substrate according to the LED chip of a preferred embodiment of LED silk of the present invention by fluorescence primer;
Fig. 5 is the LED silk structural representation of the sapphire substrate two ends connection metal guide card of a preferred embodiment according to LED silk of the present invention;
Fig. 6 arranges schematic diagram according to the fluorophor of a preferred embodiment of LED silk of the present invention;
Fig. 7 is that the fluorophor of the preferred embodiment according to LED silk of the present invention of Fig. 6 arranges close-up schematic view;
Fig. 8 is the LED silk preparation flow schematic diagram of a preferred embodiment of preparation method according to LED silk of the present invention;
Reference numeral:
1, sapphire bar, 2, metal groove, 3, sapphire substrate, 4, LED chip, 5, die bond fluorescence primer, 6, metallic laminas, 7, fluorophor; A, 0.8MM, B, 30MM.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is elaborated, below describe only exemplarily and explain, any pro forma restriction is not done to the present invention.
embodiment 1
LED silk has filament support and sapphire substrate, sapphire substrate is equipped with multiple LED chip, and the two ends of sapphire substrate are connected with metallic laminas, and filament support is the metal half bag transparent sapphire support adopting the Prof. Du Yucang sapphire of high transmission rate to make.The so-called metal of metal half bag transparent sapphire support adopts iron or copper product, and iron or copper product, after treatment before plating, adopt first nickel plating, rear silver-plated technical process is prepared.Multiple LED chip is arranged in a linear on sapphire substrate, and it is one group that a row is, and sapphire substrate can be equipped with a row or multi-row LED chip group; On sapphire substrate, spaced apart certain distance of two adjacent LED chips.Adopt die bond fluorescence primer to bond between LED chip and sapphire substrate, die bond fluorescence primer comprises silicones and yellow fluorescent powder.The two ends of metal half bag transparent sapphire support are provided with groove, and die bond fluorescence primer bonding LED chip and sapphire substrate form glue bond, and groove, substrate, glue bond three form snap-in structure.Metallic laminas is fluted body metallic laminas, conductive silver glue adhesion is used between fluted body metallic laminas and sapphire substrate, this groove can realize three directions and contact with sapphire substrate, and the metallic laminas at sapphire substrate two ends is respectively the both positive and negative polarity series LED chipset of filament.LED silk arranges three layers of fluorophor, and one deck fluorophor is fixed on above sapphire substrate, and two-layer fluorophor is coated in front and the back side of metal half bag transparent sapphire support respectively in addition.
The preparation process of LED silk comprises: step one, makes support; Step 2, substrate arranges LED chip; Step 3, die bond fluorescence primer; Step 4, support, metallic laminas, substrate three are connected together; Step 5, arranges three layers of fluorophor, step 6, dehumidifying, packaging.
Wherein: in step one, adopt the Prof. Du Yucang sapphire of high transmission rate to make metal half bag transparent sapphire support, groove is set at the two ends of metal half bag transparent sapphire support.
In step 2, adopt sapphire substrate, sapphire substrate arranges a row or multi-row LED chip group, die bond fluorescence primer between LED chip and sapphire substrate.
In step 3, adopt silicones and yellow fluorescent powder to be fully uniformly mixed and make die bond fluorescence primer, improve the phenomenon that blue light is leaked in the bright dipping of LED silk side.The concrete preparation process of die bond fluorescence primer comprises: first LED chip, is fixed on fluorescence primer on the sapphire substrate be connected with metal half bag transparent sapphire support by (1); (2) then, the semi-finished product that die bond is good are put into oven cooking cycle; (3) after the solidification of fluorescence primer, proceed to bonding equipment, the metallic laminas at LED chip and metal half bag transparent sapphire support two ends is together in series, the die bond semi-finished product completing bonding wire operation are proceeded to point gum machine; (4), after baking and some glue have operated, testing package has been taken out.
In step 4, die bond fluorescence primer bonding LED chip and sapphire substrate are formed with glue bond, and the two ends of metal half bag transparent sapphire support arrange groove, by original glue bond become glue bond and rack groove physical property by sapphire substrate card within it, form the syndeton of support, metallic laminas, sapphire substrate three engaging.Sapphire substrate two ends respectively configure a metallic laminas, first metallic laminas bender is folded a groove, conductive silver glue is clicked and entered in groove, then sapphire substrate is put into groove, the sheet metal that groove both sides are holded up can clamp sapphire substrate, add the bonding of conductive silver glue and the thermal conductivity of conductive silver glue excellence, significantly can reduce the possibility that LED silk sapphire substrate at high temperature and two ends metallic laminas ftracture.The two ends of metal half bag transparent sapphire support are by the conductive silver glue adhesion of fluted body metallic laminas and sapphire substrate, and the groove of metallic laminas can realize three directions and contact with sapphire substrate, and metallic laminas is respectively the both positive and negative polarity series connection blue chip group of filament.
In step 5, arrange three layers of fluorophor, be fixed on above sapphire substrate with one deck fluorophor, two-layer fluorophor is coated in front and the back side of metal half bag transparent sapphire support respectively in addition; Die bond fluorescence primer is mixed into the blue light that fluorophor makes LED chip side send and better goes out white light with phosphor excitation, and solution side goes out the phenomenon of blue light.
embodiment 2
LED silk have employed metal half bag transparent sapphire support, metal half bag transparent sapphire support two ends arrange groove, the glue bond that the groove at metal half bag transparent sapphire support two ends, sapphire substrate and die bond fluorescence primer bonding LED chip and sapphire substrate are formed forms a snap-in structure, by original glue bond become glue bond and groove physical property by sapphire substrate card within it.Metal half bag transparent sapphire support two ends are by the conductive silver glue adhesion of fluted body metallic laminas and sapphire substrate, this groove can realize three directions and contact with substrate, both positive and negative polarity series connection blue chip group one deck fluorophor that metallic laminas is respectively filament is fixed on above sapphire substrate, and two-layer fluorophor is coated in front and the back side of support respectively in addition.
Traditional LED lamp pearl and LED silk are general in the use of crystal-bonding adhesive adopts transparent silicon resin or milky silicones, here, primer adds fluorescence, die bond fluorescence primer adopts silicones and yellow fluorescent powder to be fully uniformly mixed, ratio is 1:0.4, ensures to improve the phenomenon that blue light is leaked in the bright dipping of filament side while primer has sufficient cohesive force.
The support that original LED silk adopts is that glass bar or translucent ceramics bracket and metallic laminas elargol, insulating cement bond, and this type of way LED silk stability is at high operating temperatures very poor, especially easily ftractures in the substrate place bonding with metallic laminas.Here a larger improvement is done: first in the metallic laminas at sapphire substrate two ends, a groove is folded with bender, elargol is clicked and entered in groove, then sapphire substrate is put into groove, the metallic laminas that groove both sides are holded up " can press from both sides " firmly sapphire substrate, add the bonding of elargol and the thermal conductivity of elargol excellence, significantly reduce the filament at high temperature possibility that ftractures of sapphire substrate and its two ends metallic laminas.
LED chip fluorescence primer is fixed on metal half bag sapphire support, then the semi-finished product that die bond is good is put into the baking box of 150 DEG C, baking 2H; Bonding equipment is proceeded to after the solidification of fluorescence primer, LED chip and two ends metallic laminas are together in series, the semi-finished product completing bonding wire operation are proceeded to point gum machine, first there is the LED chip side, then baking box 150 DEG C baking 1H is put into, then take out and put second again, then put into baking box 150 DEG C baking 4H, take out testing package.
Because what adopt when die bond operation is that " fluorescence primer " is so affect larger, so need be adjusted to closely by the fluorescence primer glue amount of all boards when operation, to improve the colourity concentration degree of finished product on the colourity centrality of later stage point glue finished product.Metal half bag support improves the thermal stability of product to a great extent, and the yield of electric welding operation has a distinct increment when later stage finished product lamp assembling.Fluted structure so need to get on the ball adjustment at the tool of die bond, bonding wire because of metal half bag support.
embodiment 3
(1) as depicted in figs. 1 and 2, the sapphire bar 1 of B length 30MM, A width 0.8MM, thickness 0.4MM is selected placement, then at metal groove 2 place, metallic laminas two ends conductive silver glue on point gum machine point, sapphire bar 1 is placed in the metal groove 2 of a little good conductive silver glue, note two ends front and back position, equal length need be stayed in two ends; Then semi-finished metal half bag transparent sapphire support is put into oven cooking cycle, baking condition is 150 degrees Celsius/2H.
As shown in Figure 3 and Figure 4, sapphire substrate 3 arranges row's LED chip group, die bond fluorescence primer 5 between LED chip 4 and sapphire substrate 3.The groove at metal half bag transparent sapphire support two ends and sapphire substrate, die bond fluorescence primer bond the glue bond that LED chip and sapphire substrate are formed, and three forms a snap-in structure.As shown in Figure 5, metallic laminas 6 is fluted body metallic laminas, uses conductive silver glue adhesion between fluted body metallic laminas and sapphire substrate, and this groove can realize three directions and contact with sapphire substrate.As shown in Figure 6 and Figure 7, LED silk arranges three layers of fluorophor 7, and one deck fluorophor is fixed on above sapphire substrate, and two-layer fluorophor is coated in front and the back side of metal half bag transparent sapphire support respectively in addition.
(2) prepare die bond fluorescence primer, by the ratio of 0.4:1, yellow fluorescent powder is mixed with KER3000 type silicones primer, stir, then vacuumizing and defoaming.
(3) die bond fluorescence primer is put into bonder lacquer disk(-sc), then opens lacquer disk(-sc), blue for the chip expanded film (blue chip) is put into wafer(wafer, Sapphire Substrate) in carrier; Check whether suction nozzle lacquer disk(-sc) normally works, and writes die bond program, start die bond operation; Die bond semi-finished product are put into oven cooking cycle, and baking condition is 160 DEG C/2H, after end to be baked, material is proceeded to bonding wire station.
(4) unitary piece of material will be completed and put into bonding equipment magazine, use 0.9mil(microinch) gold thread of diameter checks parameters, write bonding wire program, start bonding wire operation, ensure that solder joint is inclined, broken string pulling force is not less than 6G.
(5) die bond fluorescence primer is prepared, according to a specific ratio by YH628/YH538 fluorescent material (YH628 nitride rouge and powder, the yellowish green powder of YH538) mix with external sealant, fluorescence primer after mixing is put into agitator, note 2700K/3000K/4000K/6000K different-colour, debug different fluorescence primers, notice that proportioning will adjust; Because the positive and negative light transmittance of blue chip is different, so filament double-edged fluorescence primer proportioning is different, the fluorescent glue at the back side is lower by 10% than the fluorescent glue concentration in front, will by positive and negative glue with on time point during pilot, ensure filament two sides solid colour, also will determine that color tolerance is less than 6SDCM; During batch production also, adopt elder generation's face glue o'clock sharp, enter oven cooking cycle, then put the back side, enter oven cooking cycle, baking condition is 150 DEG C/2H.
(6) finished product going out baking box is put into blanking machine, be cut into the finished product filament of wall scroll, then entirely examine outward appearance and electrically.
(7) non-defective unit is put into baking box dehumidifying, dehumidifying condition is 60 degrees Celsius/6H.
(8) by completing the filament of dehumidifying operation by 300PCS/ box packaging, then 8 whole boxes are put into an aluminium foil bag, finally to aluminium foil bag vacuum-pumping and sealing.
The above is only be described the preferred embodiment of the present invention; not that scope of the present invention is limited; under not departing from the present invention and designing the prerequisite of spirit; the various distortion that the common engineers and technicians in this area make technical scheme of the present invention and improvement, all should fall in protection range that claims of the present invention determine.
Claims (10)
1. a LED silk, comprises filament support and sapphire substrate, sapphire substrate is equipped with multiple LED chip, and the two ends of sapphire substrate are respectively connected with a metallic laminas, it is characterized in that: described filament support is metal half bag transparent sapphire support.
2. LED silk as claimed in claim 1, is characterized in that: described metal half bag transparent sapphire support adopts the Prof. Du Yucang sapphire of high transmission rate to make.
3. LED silk as claimed in claim 1 or 2, is characterized in that: the metal of described metal half bag transparent sapphire support is iron or copper product, and iron or copper product, after treatment before plating, adopt first nickel plating, rear silver-plated technique is prepared.
4. LED silk as claimed in claim 1, is characterized in that: described multiple LED chip is arranged in a linear on sapphire substrate, spaced apart certain spacing of two adjacent LED chips.
5. LED silk as claimed in claim 1, is characterized in that: described sapphire substrate is equipped with a row or multi-row LED chip group.
6. LED silk as claimed in claim 1, is characterized in that: adopt die bond fluorescence primer to bond between described LED chip and described sapphire substrate.
7. LED silk as claimed in claim 6, is characterized in that: described die bond fluorescence primer comprises silicones and fluorescent material, and described die bond fluorescence primer adopts silicones and fluorescent material to be mixed with the ratio of 1:0.4.
8. LED silk as claimed in claim 1 or 2, is characterized in that: the two ends of described metal half bag transparent sapphire support are provided with groove.
9. LED silk as claimed in claim 8, it is characterized in that: the groove at described metal half bag transparent sapphire support two ends and sapphire substrate, die bond fluorescence primer bond the glue bond that LED chip and sapphire substrate are formed, and three forms a snap-in structure.
10. a preparation method for LED silk, comprises the LED silk according to any one of claim 1 to 12, it is characterized in that: this preparation method comprises the steps:
Step one, makes support;
Step 2, substrate arranges LED chip;
Step 3, preparation die bond fluorescence primer;
Step 4, support, metallic laminas, substrate three are connected together;
Step 5, arranges three layers of fluorophor;
Step 6, dehumidifying, packaging.
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|---|---|---|---|
| CN201510625790.7A CN105185892A (en) | 2015-09-28 | 2015-09-28 | LED lamp filament and preparation method therefor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511432A (en) * | 2018-05-18 | 2018-09-07 | 梁倩 | LED support and packaging |
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| CN103939758A (en) * | 2013-01-22 | 2014-07-23 | 浙江中宙照明科技有限公司 | LED lighting device |
| CN203850298U (en) * | 2014-03-12 | 2014-09-24 | 江苏银晶光电科技发展有限公司 | An LED lamp filament |
| CN205016559U (en) * | 2015-09-28 | 2016-02-03 | 浙江可可照明科技有限公司 | LED lamp filament |
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| CN103939758A (en) * | 2013-01-22 | 2014-07-23 | 浙江中宙照明科技有限公司 | LED lighting device |
| CN203850298U (en) * | 2014-03-12 | 2014-09-24 | 江苏银晶光电科技发展有限公司 | An LED lamp filament |
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Application publication date: 20151223 |