CN105185880B - 一种验证电流阻挡层效果的外延结构 - Google Patents
一种验证电流阻挡层效果的外延结构 Download PDFInfo
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- 230000004888 barrier function Effects 0.000 title claims abstract description 39
- 230000000694 effects Effects 0.000 title claims abstract description 22
- 230000000903 blocking effect Effects 0.000 claims abstract description 31
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 21
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000004020 luminiscence type Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000008859 change Effects 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 8
- 238000001194 electroluminescence spectrum Methods 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 235000013399 edible fruits Nutrition 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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Abstract
本发明公开了一种验证电流阻挡层效果的外延结构,依次包括衬底、u型氮化镓、n型氮化镓、多量子阱发光层、EBL电流阻挡层、p型氮化镓和p型接触层,其特征在于:在传统的电流阻挡层之后插入一层QW1,作为EBL电流阻挡效果验证层,通过EBL电流阻挡效果验证层和多量子层发光层的电致发光的强度比值的变化,测试电流阻挡层对电子的阻挡效果,以便于设计出电流阻挡效果最佳的电流阻挡层结构,提升发光二极管的发光效率和改善efficiency droop。
Description
技术领域
本发明涉及半导体固体照明、发光二极管领域,特别是一种验证电流阻挡层效果的外延结构及其采用该外延结构制作的发光二极管。
背景技术
现今,氮化物发光二极管(LED)固体照明因其独特的性能,已在照明方面实现广泛的应用。传统的氮化物发光二极管的电子数量和迁移率远大于空穴,导致在多量子阱发光层复合完后仍有大量剩余电子,这些电子容易溢出于p型与空穴结合,产生非辐射复合,降低注入多量子阱发光层的空穴数量,导致发光效率和强度下降,以及efficiency droop的产生。为了降低电子溢出至p型,一般在多量子阱结构之后生长一层掺Al的AlGaN电流阻挡层,借助AlGaN较高的势垒阻挡电子向p型移动。但由于长完电流阻挡层后必须再生长p型氮化镓层,难以测试溢出电子的数量,很难评估AlGaN电流阻挡层的阻挡电子的效果,导致较难设计和评估AlGaN电流阻挡层的效果。
鉴于现有技术中尚无有效验证电流阻挡层效果的手段和方法。因此有必要提出一种验证电流阻挡层效果的外延结构。
发明内容
本发明的目的在于提供一种验证电流阻挡层效果的外延结构,依次包括衬底、u型氮化镓、n型氮化镓、多量子阱发光层(MQW)、EBL电流阻挡层、p型氮化镓和p型接触层,其特征在于:在电流阻挡层与p型氮化镓之间插入一层QW1,作为EBL电流阻挡效果验证层,通过EBL电流阻挡效果验证层和多量子阱发光层的电致发光的强度比值的变化,测试EBL电流阻挡层对电子的阻挡效果,以便于设计出电流阻挡效果最佳的电流阻挡层结构,提升发光二极管的发光效率和改善efficiency droop。
进一步地,根据本发明,所述EBL电流阻挡效果验证层QW1材料为AlxInyGa1-x-yN,0<x<1,0<y<1。
进一步地,根据本发明,所述EBL电流阻挡效果验证层QW1材料为InxGa1-xN。
进一步地,根据本发明,所述EBL电流阻挡效果验证层QW1的InxGa1-xN材料的In组分为0.01≤x≤0.10或0.20≤x<1,使得QW1的In组分与多量子阱发光层的InyGa1-yN的In组分为0.10<y<0.20不同,用于在电致发光谱区分多量子阱和EBL电流阻挡效果验证层的发光峰,优选EBL电流阻挡效果验证层QW1的InxGa1-xN材料的In组分x=0.30。
进一步地,根据本发明,所述EBL电流阻挡效果验证层QW1的厚度为1~1000nm,优选QW1的厚度为5nm。
进一步地,根据本发明,所述EBL电流阻挡效果验证层QW1为p型掺杂,掺杂浓度为1×1018 ~1×1021cm-3,优选掺杂浓度为1×1019cm-3。
进一步地,根据本发明,所述外延结构适合用于制作蓝光发光二极管、绿光发光二极管或紫外发光二极管。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1为本发明实施例一种验证电流阻挡层效果的外延结构的结构示意图。
图2为本发明实施例一种验证电流阻挡层效果的外延结构的原理示意图。
附图标注:100:衬底;101:u型氮化镓;102:n型氮化镓;103:多量子阱发光层;104:EBL电流阻挡层;105:QW1(EBL电流阻挡效果验证层);106:p型氮化镓;107:p型接触层。
具体实施方式
以下结合附图和具体实施例对本发明作进一步的详细描述,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。需要知晓的是,本发明的实施方式不限于此。
实施例
本发明提出的一种制作蓝光发光二极管中用于验证电流阻挡层效果的外延结构,其示意图如图1所示,首先在衬底100上依次外延生长u型氮化镓101、n型氮化镓102、多量子阱发光层103和EBL电流阻挡层104,然后,在EBL电流阻挡层之后外延一层QW1即EBL电流阻挡效果验证层105,接着,继续外延p型氮化镓106和p型接触层107。
QW1的EBL电流阻挡效果验证层材料可以选择AlxInyGa1-x-yN(0<x<1,0<y<1)或InxGa1-xN(0<x<1),本实施例优选InGaN材料, In组分为0.30,厚度为5nm,Mg掺杂浓度为1×1019cm-3。EBL电流阻挡效果验证层的原理如图2所示,在多量子阱复合后剩余的电子有机会溢过EBL电流阻挡层,特别是在大电流注入的情况下,电子溢出的数量会更多,导致空穴注入的数量下降,引起发光效率下降和efficiency droop。电子和空穴注入多量子阱,复合发出波长为λ1的光,通过插入QW1即EBL电流阻挡效果验证层,溢出的电子会落在QW1中,并与空穴结合发出波长为λ2的光,然后,对比λ2/λ1的发光强度比值,可以计算出从电子阻挡层溢出的电子比例,从而评估电子阻挡层的效果。通过对比不同EBL电流阻挡层的λ2/λ1的发光强度比值,即可设计出最佳的电流阻挡层,进而提升发光效率和发光强度,改善efficiencydroop。
需要说明的是,虽然上述实施例中提供的外延结构用于制作蓝光发光二极管,其亦可用于制作绿光发光二极管或紫外发光二极管。
以上实施方式仅用于说明本发明,而并非用于限定本发明,本领域的技术人员,在不脱离本发明的精神和范围的情况下,可以对本发明做出各种修饰和变动,因此所有等同的技术方案也属于本发明的范畴,本发明的专利保护范围应视权利要求书范围限定。
Claims (6)
1.一种验证电流阻挡层效果的外延结构,从下至上包括衬底、u型氮化镓、n型氮化镓、多量子阱发光层、EBL电流阻挡层、p型氮化镓和p型接触层,其特征在于:在EBL电流阻挡层与p型氮化镓之间插入一层QW1,作为EBL电流阻挡效果验证层,通过EBL电流阻挡效果验证层和多量子阱发光层的电致发光的强度比值的变化,测试EBL电流阻挡层对电子的阻挡效果,所述EBL电流阻挡效果验证层QW1的材料为AlxInyGa1-x-yN,0<x<1,0<y<1。
2.一种验证电流阻挡层效果的外延结构,从下至上包括衬底、u型氮化镓、n型氮化镓、多量子阱发光层、EBL电流阻挡层、p型氮化镓和p型接触层,其特征在于:在EBL电流阻挡层与p型氮化镓之间插入一层QW1,作为EBL电流阻挡效果验证层,通过EBL电流阻挡效果验证层和多量子阱发光层的电致发光的强度比值的变化,测试EBL电流阻挡层对电子的阻挡效果,所述EBL电流阻挡效果验证层QW1的材料为InxGa1-xN,In组分为0.01≤x<0.10或0.20≤x<1,使得QW1的In组分与多量子阱发光层的InyGa1-yN的In组分为0.10<y<0.20不同,用于在电致发光谱区分多量子阱和EBL电流阻挡效果验证层的发光峰。
3.根据权利要求1或2所述的一种验证电流阻挡层效果的外延结构,其特征在于:所述EBL电流阻挡效果验证层QW1的厚度为1~1000nm。
4.根据权利要求1或2所述的一种验证电流阻挡层效果的外延结构,其特征在于:所述EBL电流阻挡效果验证层QW1为p型掺杂。
5.根据权利要求4所述的一种验证电流阻挡层效果的外延结构,其特征在于:所述p型掺杂浓度为1×1018 ~1×1021cm-3。
6.根据权利要求1或2所述的一种验证电流阻挡层效果的外延结构,其特征在于:所述外延结构用于制作蓝光发光二极管、绿光发光二极管或紫外发光二极管。
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