CN105185801B - Solid-state image pickup device and image pickup system - Google Patents
Solid-state image pickup device and image pickup system Download PDFInfo
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- CN105185801B CN105185801B CN201510540844.XA CN201510540844A CN105185801B CN 105185801 B CN105185801 B CN 105185801B CN 201510540844 A CN201510540844 A CN 201510540844A CN 105185801 B CN105185801 B CN 105185801B
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Abstract
The present invention relates to a solid-state image pickup apparatus and an image pickup system. A solid-state image pickup device according to the present invention is configured by laminating a first substrate having a photoelectric conversion element and a gate electrode of a transfer transistor and a second substrate having a peripheral circuit section. The first substrate does not have the high-melting-point metal compound layer, and the second substrate has the high-melting-point metal compound layer. This simple configuration enables the transistors in the peripheral circuit section to operate at high speed while suppressing deterioration in the characteristics of the photoelectric conversion element, thereby enabling high-speed signal readout operation.
Description
The present application is a divisional application of an invention patent application having an application number of 200980163052.8, an application date of 2009, 12 months, 26 days, and an invention name of "solid-state image pickup apparatus and image pickup system".
Technical Field
The present invention relates to a back-illuminated solid-state image pickup device.
Background
Recent higher-speed solid-state image pickup devices have led to the proposal of a structure in which a semiconductor compound layer is provided at a transistor.
PT L1 discusses a solid-state image pickup device in which a high-melting-point metal semiconductor compound layer is not provided on a photodetector of a photoelectric conversion portion, and a high-melting-point metal semiconductor compound layer is provided at a peripheral circuit portion (peripheral circuit portion).
PT L2 discusses a back-illuminated solid-state image pickup device in which, in order to increase the sensitivity of a photoelectric conversion element, a substrate including a pixel portion having the photoelectric conversion element and a signal readout circuit and a substrate including a peripheral circuit for processing a readout signal by a circuit driving the pixel portion are bonded to each other.
CITATION LIST
Patent document
PT L1 Japanese patent laid-open No.2001-111022
PT L2 Japanese patent laid-open No.2009-170448
Disclosure of Invention
Technical problem
in addition, for example, a white defect may occur in an image due to a leakage current generated as a result of contamination of the photoelectric conversion element with the high-melting-point metal, and, in order to form the structure discussed in PT L1, it is necessary to determine where to form the high-melting-point metal semiconductor compound layer on the same substrate, thereby complicating the process.
Therefore, an object of the present invention is to provide a solid-state image pickup device in which a high melting point metal compound layer is provided in a peripheral circuit portion while suppressing a decrease in characteristics of a photoelectric conversion element which causes, for example, generation of a white defect, by using a simple structure.
Solution to the problem
The present invention provides a solid-state image pickup device in which a first substrate provided with a photoelectric conversion element and a gate electrode for transferring charges from the photoelectric conversion element and a second substrate provided with a peripheral circuit section for reading out a signal based on the charges generated at the photoelectric conversion element are laminated on each other, wherein the second substrate has a high-melting-point metal compound layer, and the first substrate does not have the high-melting-point metal compound layer.
Advantageous effects of the invention
According to the present invention, it is possible to provide a solid-state image pickup device in which a high melting point metal compound layer is provided in a peripheral circuit section while suppressing a decrease in characteristics of a photoelectric conversion element by using a simple structure.
Drawings
Fig. 1 is a sectional view for describing a solid-state image pickup device of the first embodiment.
Fig. 2 is a sectional view for describing a solid-state image pickup device of the second embodiment.
Fig. 3 is a sectional view for describing a solid-state image pickup device of the third embodiment.
Fig. 4 shows a method of manufacturing a solid-state image pickup device according to a third embodiment.
Fig. 5 shows a method of manufacturing a solid-state image pickup device according to a third embodiment.
Fig. 6 is a sectional view for describing a solid-state image pickup device of the fifth embodiment.
Fig. 7 shows a method of manufacturing a solid-state image pickup device according to a fourth embodiment.
Fig. 8 shows a method of manufacturing a solid-state image pickup device according to a fourth embodiment.
Fig. 9 shows a method of manufacturing a solid-state image pickup device according to a fourth embodiment.
Fig. 10 is a sectional view for describing a solid-state image pickup device of the fifth embodiment.
Fig. 11 is a sectional view for describing a solid-state image pickup device of the sixth embodiment.
Fig. 12 is an exemplary circuit of a solid-state image pickup device according to the present invention.
Fig. 13 is a block diagram showing an image pickup system according to a seventh embodiment.
Detailed Description
The solid-state image pickup device according to the present invention is formed by laminating a first substrate and a second substrate to each other, wherein the first substrate has a photoelectric conversion element and a gate electrode for transfer and the second substrate has a peripheral circuit section. The first substrate is not provided with a high melting point metal compound layer, and the second substrate is provided with a high melting point metal compound layer. With this structure, it becomes easier to determine where to form the compound layer, and it becomes possible to operate the transistor at the peripheral circuit portion at higher speed and perform the signal readout operation at high speed while suppressing the characteristic degradation of the photoelectric conversion element.
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
First embodiment
A first embodiment of the present invention will be described with reference to fig. 1 and 12.
First, an exemplary circuit of the solid-state image pickup device according to the first embodiment is described with reference to fig. 12. A solid-state image pickup device 300 shown in fig. 12 includes a pixel section 301 in which a plurality of photoelectric conversion elements are arranged, and a peripheral circuit section 302 having a control circuit for performing a driving operation for reading a signal from the pixel section 301 and having a signal processing circuit that processes a readout signal.
in the pixel portion 301, a plurality of photoelectric conversion elements 303, a transfer transistor 304, an amplification transistor 306, and a reset transistor 307 are provided, a structure including at least one photoelectric conversion element 303 is defined as a pixel, one pixel in the embodiment includes the photoelectric conversion element 303, the transfer transistor 304, the amplification transistor 306, and the reset transistor 307, a source of the transfer transistor 304 is connected to the photoelectric conversion element 303, and a drain region of the transfer transistor 304 is connected to a gate electrode of the amplification transistor 306, a node corresponding to the gate electrode of the amplification transistor 306 is defined as a node 305, the reset transistor is connected to the node 305, and a potential of the node 305 is set to any potential (for example, a reset potential), here, the amplification transistor 306 is a part of a source follower circuit, and a signal corresponding to a potential of the node 305 is output to a signal line R L.
The peripheral circuit portion 302 includes a vertical scanning circuit VSR for supplying a control signal to the gate electrode of the transistor of the pixel portion 301. The peripheral circuit portion 302 includes a readout circuit RC which holds a signal output from the pixel portion 301 and includes a signal processing circuit for amplification, addition, AD conversion, and the like. The peripheral circuit unit 302 includes a horizontal scanning circuit HSR which controls a control circuit for sequentially outputting signals from the read circuit RC.
Here, the solid-state image pickup device 300 according to the first embodiment is formed by stacking two chips on each other. The two chips are a first chip 308 including the photoelectric conversion element 303 and the transfer transistor 304 of the pixel portion 301, and a second chip 309 including the amplification transistor 306 and the reset transistor 307 of the pixel portion 301 and the peripheral circuit portion 302. In this structure, a control signal is supplied from the peripheral circuit section 302 of the second chip 309 to the gate electrode of the transfer transistor 304 of the first chip 308 through the connection section 310. A signal generated at the photoelectric conversion element 303 of the first chip 308 is read out to the node 305 through the connection portion 311 connected to the drain region of the transfer transistor 304. By providing the reset transistor 307 and the amplification transistor 306 on another chip in this manner, the area of the photoelectric conversion element 303 can be increased, and the sensitivity can be increased. If the areas of the photoelectric conversion elements 303 are the same, a large number of the photoelectric conversion elements 303 may be provided, thereby enabling the number of pixels to be increased.
A solid-state image pickup device according to an embodiment will be described below with reference to fig. 1. Fig. 1 is a sectional view of a solid-state image pickup device 100 corresponding to the solid-state image pickup device 300 shown in fig. 12. Fig. 1 is a cross-sectional view corresponding to the photoelectric conversion element 303, the transfer transistor 304, and the amplification transistor 306 shown in fig. 12. Other parts are not described. Fig. 1 shows a structure for two pixels.
Fig. 1 shows a first chip 101, a second chip 102 and a bonding surface 103 of the first chip and the second chip. The first chip 101 corresponds to the first chip 308 shown in fig. 12, and the second chip 102 corresponds to the second chip 309 shown in fig. 12.
The first chip 101 has a first substrate 104. The surface of the first substrate 104 on which the transistors are formed is a main surface 105, and the surface opposite thereto is a back surface 106. Portions constituting the photoelectric conversion element 303 and the transfer transistor 304 shown in fig. 12 are provided on the first substrate 104. A multilayer wiring structure 107 including a first wiring layer 122 and a second wiring layer 123, for example, having a wiring whose main component is aluminum (aluminum line), is provided on an upper portion of the first chip 101 on the principal surface 105 side of the first substrate 104. Here, the plurality of interlayer insulating films of the multilayer wiring structure 107 are described as an integral insulating film.
The second chip 102 has a second substrate 108. The surface of the second substrate 108 on which the transistor is formed is a main surface 109, and the surface opposite thereto is a back surface 110. A multilayer wiring structure 111 including a first wiring layer 128 and a second wiring layer 129, which have aluminum lines, for example, is provided on an upper portion of the main surface 109 of the second substrate 108. Even here, the plural interlayer insulating films of the multilayer wiring structure 111 are described as an integral insulating film. The amplifying transistor 306 shown in fig. 12 is provided on the second substrate 108. In the description, in each chip, a direction from the main surface to the back surface of the substrate is defined as a downward direction or a deep direction, and a direction from the back surface to the main surface is defined as an upward direction or a shallow direction.
Here, in the solid-state image pickup device according to the embodiment, the substrate main surface 105 of the first chip 101 and the substrate main surface 109 of the second chip 102 are laminated on each other so as to face each other. In fig. 1, in the structure of the connection portion of the first chip 101 and the second chip 102, only the connection between the floating diffusion region (FD region) 113 of the first chip 101 and the gate electrode of the amplification transistor 126 of the second chip 102 is shown. Specifically, the FD region 113 of the first chip 101 is connected to the gate electrode 126 of the amplification transistor through the multilayer wiring structure 107, the connection portion 311, and the multilayer wiring structure 111. The connection portion 310 shown in fig. 12 that supplies a control signal to the gate electrode 114 of the transfer transistor is not shown in fig. 1. The solid-state image pickup device according to the embodiment is a back-side illumination type solid-state image pickup device that irradiates light from the back surface 106 of the first substrate 104.
first, a well 115, an N-type charge accumulation region 112 constituting a photoelectric conversion element, and a gate electrode 114 of a transfer transistor are provided on a first substrate 104 of a first chip 101, and a P-type surface protection layer constituting the photoelectric conversion element is provided on an upper portion of the charge accumulation region 112, and a P-type semiconductor region 116, an element isolation region 117, and a drain region 113 of the transfer transistor are provided on the first substrate 104. the well 115 is a semiconductor region where the transistor and the photoelectric conversion element are provided, and may be an N-type or a P-type here.the P-type semiconductor region 116 may suppress a dark current generated on an interface between silicon and a silicon oxide film of a back surface 106 of the first substrate 104, and may even serve as a part of the photoelectric conversion element.the charge accumulation region 112 accumulates charges (electrons) generated at the photoelectric conversion element, and has a P-type surface protection layer on a gate electrode side of the transfer transistor in fig. 1. the element isolation region 117 is formed of a P-type semiconductor region, and, although not shown, may have a light shielding layer L or an isolation layer 120 such as an ocl isolation layer or an isolation layer 120, a light shielding layer, and a drain electrode isolation layer 121L or a first substrate 12, a micro-reflective film, a first substrate 104, and a drain electrode isolation layer 12L or a micro-type transistor, a micro-reflective film structure, a micro-reflective film, a reflective film, and a reflective film structure.
Then, the well 124, the source and drain regions 125 and the gate electrode 126 of the amplifying transistor 306 in fig. 12, and the element isolation region 127 are disposed on the second substrate 108 of the second chip 102. The well 124 is a P-type semiconductor region. Here, the source region and the drain region 125 of the transistor (the amplifying transistor 306 shown in fig. 12) provided at the second chip 102 of the solid-state image pickup device according to the embodiment include the high-melting-point metal compound layer 130. The region constituting the peripheral circuit portion 302 shown in fig. 12 provided at the second chip 102 also similarly has a transistor (not shown) including a high melting point metal compound layer. When silicon is used in the semiconductor substrate, the high-melting point metal compound layer is, for example, a silicide using cobalt or titanium as a high-melting point metal.
A high melting point metal compound layer is not formed on, for example, the transistors of the first substrate 104. An insulating film of the multilayer wiring structure is provided on the upper portion of the main surface 105 of the first substrate 104. Therefore, the high melting point metal compound layer is not formed on the first substrate 104, and the transistor provided in the peripheral circuit portion of the second substrate has the high melting point metal compound layer, so that the operating speed of the transistor can be increased while reducing noise. In addition, by providing a transistor including such a high-melting-point metal compound layer only in the second chip 102, it is possible to reduce mixing of a high-melting-point metal into the photoelectric conversion element and reduce noise generated by mixing of the high-melting-point metal. Since it is not necessary to form a region where the high-melting point metal compound layer is to be provided and a region where the high-melting point metal compound layer is not to be provided on the same substrate, it is not necessary to form, for example, a protective film to prevent formation of the high-melting point metal compound layer, that is, it is possible to make each substrate have a simple structure and manufacture it by using simple steps.
In the embodiment, an FD region is formed in the first substrate 104 in addition to the photoelectric conversion element. This is because, if the high melting point metal compound layer is provided in the photoelectric conversion element and the semiconductor region constituting the FD region holding the signal charge generated at the photoelectric conversion element, noise generated when the high melting point metal is mixed into the semiconductor region is mixed into the signal charge. If the amplifying transistor is provided on the first substrate, the high melting point metal compound layer is not formed on the amplifying transistor.
Although each wiring layer is formed of an aluminum wire in the embodiment, each wiring layer may be formed of a wire (copper wire) whose main component is copper. A diffusion preventing film that prevents diffusion of copper may also be disposed on an upper portion of the copper line, and the diffusion preventing film that prevents diffusion of copper may be subjected to patterning.
Second embodiment
A solid-state image pickup device according to the present embodiment will be described with reference to fig. 2. The solid-state image pickup device according to the embodiment is similar to the solid-state image pickup device according to the first embodiment in that its circuit is equivalent to that shown in fig. 12, and the two differ in that their chip stacking structures. The description of the circuit will be omitted below. The structure shown in fig. 2 will be described below.
Fig. 2 is a cross-sectional view of a solid-state image pickup device 200 corresponding to the circuit shown in fig. 12. Fig. 2 is a cross-sectional view of two pixels corresponding to the photoelectric conversion element 303, the transfer transistor 304, and the amplification transistor 306 shown in fig. 12, and other parts are not shown.
Fig. 2 shows a first chip 201, a second chip 202 and a bonding surface 203 of the first chip and the second chip. The first chip 201 corresponds to the first chip 308 shown in fig. 12, and the second chip 202 corresponds to the second chip 309 shown in fig. 12.
The first chip 201 has a first substrate 204. The surface of the first substrate 204 on which the transistor is formed is a main surface 205, and the surface opposite thereto is a back surface 206. Portions constituting the photoelectric conversion element 303 and the transfer transistor 304 shown in fig. 12 are provided on the first substrate 204. A multilayer wiring structure 207 including a first wiring layer 222 and a second wiring layer 223, for example, having aluminum lines, is provided on an upper portion of the main surface 205 of the first substrate 204. Here, the plurality of interlayer insulating films of the multilayer wiring structure 207 are described as an integral insulating film.
The second chip 202 has a second substrate 208. The surface of the second substrate 208 on which the transistors are formed is a main surface 209, and the surface of the second substrate opposite thereto is a back surface 210. A multilayer wiring structure 211 including a first wiring layer 228 and a second wiring layer 229, which has an aluminum line for example, is provided on an upper portion of the main surface 209 of the second substrate 208. Even here, the plural interlayer insulating films of the multilayer wiring structure 211 are described as an integral insulating film. The amplifying transistor 306 shown in fig. 12 is provided on the second substrate 208.
Here, in the solid-state image pickup device according to the embodiment, the principal surface 205 of the first substrate 204 and the back surface 210 of the second substrate 208 are laminated on each other so as to face each other. In fig. 2, in the structure of the connection portion of the first chip 201 and the second chip 202, only the connection between the FD 213 of the first chip 201 and the gate electrode 226 of the amplification transistor of the second chip 202 is shown. Specifically, the FD region 213 of the first chip 201 is connected to the gate electrode 226 of the amplification transistor through the multilayer wiring structure 207, the connection portion 311, and the multilayer wiring structure 211. Here, the through electrode 235 constituting a part of the connection portion 311 and related to the second substrate 208 is provided. The FD region 213 and the gate electrode 226 of the amplification transistor are connected to each other through the through electrode. The connection portion 310 shown in fig. 12 for supplying a control signal to the gate electrode 214 of the transfer transistor is not shown in fig. 2. The solid-state image pickup device according to the embodiment is a back-side illumination type solid-state image pickup device that irradiates light from the back surface 206 of the first substrate 204.
Each chip will be described in detail below. A well 215, an N-type charge accumulation region 212 constituting a photoelectric conversion element, and a gate electrode 214 of a transfer transistor are provided on the first substrate 204 of the first chip 201. Also, a P-type semiconductor region 216, an element isolation region 217, and a drain region 213 of the transfer transistor are provided on the first substrate 204. The first chip 201 has an antireflection film 218, a light-shielding film 219, a color filter layer 220 including a planarization layer, and a microlens 121 on the back surface 206 side of the first substrate 204. Then, a well 224, source and drain regions 225 and a gate electrode 226 of the amplifying transistor 306 in fig. 12, and an element isolation region 227 are disposed on the second substrate 208 of the second chip 202. In addition, the first wiring layer 228 and the second wiring layer 229 are provided at an upper portion of the second substrate 208, and the insulating layer 234 is provided at the deepest portion of the second substrate 208. The structures of the first chip 201 and the second chip 202 are similar to those of the first embodiment, and therefore they will not be described below.
In the second embodiment, an adhesive layer 232 and a support substrate 233 are further provided on the upper portion of the second chip 202. The insulating layer, the adhesive layer 232, and the support substrate 233 in the second embodiment will be described later.
Here, the source and drain regions 225 and the gate electrode 226 of the transistor (the amplifying transistor 306 shown in fig. 12) provided in the second chip 202 of the solid-state image pickup device according to the embodiment have the high-melting-point metal compound layer 230. The region provided in the second chip 202 constituting the peripheral circuit portion 302 shown in fig. 12 also similarly has a transistor (not shown) including a refractory metal compound layer. When silicon is used in the semiconductor substrate, the high-melting point metal compound layer is, for example, a silicide using cobalt or titanium as a high-melting point metal. For example, a transistor provided in the peripheral circuit portion of the second substrate has a high-melting-point metal compound layer, so that the speed of operation of the transistor can be increased. In addition, by providing a transistor including such a high-melting metal compound layer only in the second chip 202, it is possible to reduce mixing of a high-melting metal into the photoelectric conversion element while suppressing a decrease in characteristics of the photoelectric conversion element of the first chip 201. Since it is not necessary to form a region where the high-melting point metal compound layer is to be provided and a region where the high-melting point metal compound layer is not to be provided on the same substrate, it is not necessary to form, for example, a protective film to prevent formation of the high-melting point metal compound layer, that is, it is possible to make each substrate have a simple structure and manufacture it by using simple steps.
Third embodiment
A solid-state image pickup device according to the present embodiment will be described with reference to fig. 3. The solid-state image pickup device according to the embodiment corresponds to the solid-state image pickup device 100 according to the first embodiment, and is different therefrom in that it contains a diffusion preventing film. The structure shown in fig. 3 will be described below. The same structural features as those of the first embodiment will not be described.
In the solid-state image pickup device 400 shown in fig. 3, the diffusion preventing film 131 is provided between the first chip 101 and the second chip 102. By providing such a diffusion prevention film 131, it is possible to suppress diffusion of the high-melting metal compound layer provided in the second chip into the multilayer wiring structures 111 and 107 and mixing of the high-melting metal into the semiconductor region constituting the FD region and the photoelectric conversion element of the first chip. Therefore, generation of a leakage current causing a white defect (of an image) or a dark current generated when a high melting point metal is mixed into a semiconductor region can be further suppressed.
A method of manufacturing the solid-state image pickup device 400 shown in fig. 3 will be described with reference to fig. 4 and 5. First, in fig. 4(a), a photodiode forming part (hereinafter, referred to as "PD forming part") 401 which becomes the first substrate 104 shown in fig. 3 and a circuit forming part 402 which becomes the second substrate 108 shown in fig. 3 are provided. These components are, for example, silicon semiconductor substrates and may be of any conductivity type. The PD forming part 401 includes a P-type semiconductor region 116 and an insulating layer 403. The PD forming part 401 uses an SOI substrate, and the P-type semiconductor region 116 can be formed by epitaxial growth or ion implantation.
Then, as shown in fig. 4(b), elements such as the gate electrode 114 of the transfer transistor and the charge accumulation region 112 are formed in the PD forming part 401. The multilayer wiring structure 107 is formed on the upper portion of the PD forming part 401. The multilayer wiring structure 107 has a first wiring layer 122 and a second wiring layer 123. The first wiring layer 122 and the second wiring layer 123 include a plurality of wirings. The wiring in the embodiment is an aluminum wire. The multilayer wiring structure 107 has an interlayer insulating film for insulating wirings from each other. For example, interlayer insulating films are provided between the first wiring layer 122 and the gate electrode of the transfer transistor and between the first wiring layer 122 and the second wiring layer 123. To form the multilayer wiring structure 107, a general semiconductor process may be used. Finally, an interlayer insulating film covering the second wiring layer is formed, and portions thereof are removed so that some of the wirings of the second wiring layer 123 are exposed. The exposed second wiring layer 123 constitutes a connection portion 311. The surface of the PD forming member 401, which forms the gate electrode of the transfer transistor, becomes the main surface 105 of the first substrate described later.
In fig. 4(b), a well 124 and a peripheral circuit portion including a transistor such as the amplifying transistor 306 are formed in the circuit forming portion 402. Then, a high melting point metal is deposited on predetermined positions such as a source region, a drain region 125, and a gate electrode 126 of the transistor, and heat treatment is performed, thereby forming a high melting point metal compound layer 130. Then, the multilayer wiring structure 111 is formed on the upper portion of the circuit forming member 402. The multilayer wiring structure 111 has a first wiring layer 128 and a second wiring layer 129. The structure and the manufacturing method of the multilayer wiring structure 111 are similar to those of the multilayer wiring structure 107 of the PD forming part 401. Then, after the second wiring layer 129 is formed, a diffusion preventing film 131 covering the second wiring layer 129 is formed. The diffusion preventing film 131 is formed of, for example, silicon nitride or silicon carbide. The diffusion prevention film 131 is used to suppress diffusion of the high melting point metal into the PD formation member 401. Then, portions of the diffusion preventing film 131 are removed, so that some of the wirings of the second wiring layer 129 constituting the connection portion 311 are exposed. Here, the diffusion preventing film may be removed by etching or CMP technique. Here, the circuit forming part 402 becomes the second substrate 108. The main surface 109 of the second substrate 108 is determined as shown in fig. 4 (b).
Then, as shown in fig. 5(c), the main surfaces (105, 109) of the PD forming part 401 and the circuit forming part 402 are arranged to face each other and are bonded together by, for example, micro bumps.
Finally, as shown in fig. 5(d), the undesired portion 404 of the PD forming member 401 and the insulating layer 403 are removed by, for example, CMP or etching, so that the PD forming member 401 is made thinner to form the first substrate 104. Then, an antireflection film 118 formed of silicon carbide is formed on the upper portion of the back surface 106 of the first substrate 104. After the antireflection film 118 is formed, a tungsten film is formed on the upper portion of the antireflection film 118 so as to be patterned, thereby forming a light-shielding film 119. Then, a planarization layer and a color filter 120 are formed, and a microlens 121 is formed. This manufacturing method enables manufacturing the solid-state image pickup device 400 shown in fig. 3.
Here, according to the structure of the embodiment, after the interlayer insulating film of the multilayer wiring structure 107 is formed, heat treatment can be performed at high temperature or for a long time in order to improve the characteristics of the photoelectric conversion element such as recovery from defects. If the first substrate has a high-melting-point metal compound layer, the high-melting-point metal compound layer is formed before the interlayer insulating film is formed. After the interlayer insulating film is formed, it becomes difficult to perform heat treatment at high temperature or for a long time due to problems such as diffusion of a high melting point metal. Therefore, according to the structure of the embodiment, since the heat treatment for recovery from defects of the photoelectric conversion element can be optionally performed, it is possible to suppress a decrease in characteristics of the photoelectric conversion element.
In a desirable form, in order to increase the connection resistance of the contact provided at the FD region, it is desirable to perform ion implantation and heat treatment on the semiconductor region connected with the plug. However, as described above, if the first substrate has the high-melting-point metal compound layer, it becomes difficult to perform heat treatment in the contact forming step performed after the interlayer insulating film is formed. Therefore, according to the structure of the embodiment, it is possible to perform sufficient heat treatment in the step of forming a contact in the FD region where the high melting point metal compound layer is not provided while the high melting point metal compound layer is provided in the peripheral circuit section. Therefore, the contacts at the FD region can be appropriately connected while reducing contamination of the refractory metal of the FD region.
As described above, according to the solid-state image pickup device of the embodiment, it is possible to further suppress the generation of the dark current at the photoelectric conversion element while increasing the speed of the operation of the transistor at the peripheral circuit section and increasing the speed of the signal readout operation.
Fourth embodiment
A solid-state image pickup device according to the present embodiment will be described with reference to fig. 6. The structure of the solid-state image pickup device according to the present embodiment corresponds to that of the solid-state image pickup device according to the second embodiment, and is different therefrom in that it contains a diffusion preventing film. The structure shown in fig. 6 will be described below. Structural features equivalent to those of the second embodiment will not be described.
In the solid-state image pickup device 500 shown in fig. 6, a diffusion preventing film 231 that prevents diffusion of the high melting point metal is provided between the first chip 210 and the second chip 202. By providing such a diffusion preventing film 231, it is possible to further suppress the incorporation of the high-melting metal compound layer provided in the second chip into the photoelectric conversion element of the first chip and the semiconductor region constituting the FD region. Therefore, generation of white defects (of an image) or dark current can be suppressed. The diffusion preventing film 231 is a film formed of, for example, silicon nitride or silicon carbide.
Next, a method of manufacturing the solid-state image pickup device 500 shown in fig. 6 will be described with reference to fig. 7 to 9. First, in fig. 7(a), a photodiode forming substrate (hereinafter, referred to as "PD forming part") 501 which becomes the first substrate 204 shown in fig. 6 and a circuit forming part 502 which becomes the second substrate 208 shown in fig. 6 are provided. The PD formation member 501 includes a p-type semiconductor region 216 and an insulating layer 503. The PD forming part 501 uses an SOI substrate, and the p-type semiconductor region 216 can be formed by epitaxial growth or ion implantation. The circuit forming member 502 uses an SOI substrate and includes an insulating layer 234.
Then, in a PD forming section 501 shown in fig. 7(b), elements such as the gate electrode 214 of the transfer transistor, the charge accumulation region 212, and the well 215 are formed. The multilayer wiring structure 207 is formed on the upper portion of the PD forming part 501. The multilayer wiring structure 207 includes a first wiring layer 222 and a second wiring layer 223. The structure and the manufacturing method of the multilayer wiring structure 207 are similar to those in the third embodiment, and therefore they will not be described. Then, an interlayer insulating film covering the second wiring layer 223 is formed, and portions of the interlayer insulating film are removed so that the wirings of the second wiring layer 223 are exposed. The second wiring layer 223 constitutes the connection portion 311. Then, a diffusion preventing film 231 covering the second wiring layer 223 and formed of, for example, silicon nitride or silicon carbide is formed. An interlayer insulating film covering the second wiring layer 233 may be provided between the second wiring layer 223 and the diffusion preventing film 231.
In the circuit forming portion 502 shown in fig. 7(b), a transistor including an amplifying transistor and the well 224 are formed. Then, a refractory metal is deposited on predetermined positions such as a source region, a drain region, and a gate electrode of the transistor, and heat treatment is performed, thereby forming the refractory metal compound layer 230. Then, the multilayer wiring structure 211 is formed on the upper portion of the circuit forming member 502. The multilayer wiring structure 211 has a first wiring layer 228. The structure and manufacturing method of the first wiring layer 228 are similar to those of the third embodiment.
Then, in fig. 8(c), an adhesive layer 506 and a support base 507 are formed on the upper portion of the first wiring layer 228 at the circuit forming part 502. Then, an undesired portion 504 of the circuit forming member 502 is removed by ablation or etching, and the second substrate 208 is formed.
In fig. 8(d), the principal surface 205 of the PD forming member 501 which becomes the first substrate 204 shown in fig. 6 and the back surface 210 of the second substrate 208 are laminated on each other so as to face each other, and are bonded together by, for example, a micro bump. Then, the first adhesive layer 506 and the first support base 507 are removed. Then, an interlayer insulating film is formed on an upper portion of the first wiring layer 228 of the second substrate 208, and a through electrode 235 for electrical connection with the first substrate 204 is formed. The through electrode 235 may be manufactured by a general semiconductor process. Then, the through electrode 235 is covered, and the second wiring layer 229 is formed.
Then, as shown in fig. 9, an adhesive layer 232 and a support base 233 are provided on the upper portion of the second wiring layer 229 of the second substrate 208. Then, the undesired portion 505 of the PD forming member 501 is removed by, for example, CMP or etching, and the first substrate 204 is formed. Then, an anti-reflection film 218 formed of, for example, silicon nitride is formed on the upper portion of the back surface 206 of the first substrate 204. Then, a light-shielding film 219 formed of, for example, tungsten is formed on the upper portion of the antireflection film 218. Further, a planarization layer and a color filter 120 are formed on the light-shielding film 219, and a microlens 212 is formed. This manufacturing method enables manufacturing the solid-state image pickup device 500 shown in fig. 6.
Even in the structure according to the embodiment, since the heat treatment of the contact or the photoelectric conversion element can be optionally performed, a decrease in the characteristics of the photoelectric conversion element and an increase in the connection resistance of the contact can be suppressed.
As described above, according to the solid-state image pickup device of the embodiment, it is possible to further suppress the generation of the dark current at the photoelectric conversion element while increasing the operation speed of the transistor at the peripheral circuit section and increasing the speed of the signal readout operation.
Fifth embodiment
A solid-state image pickup device according to the present embodiment will be described with reference to fig. 10. The structures of the solid-state image pickup devices 600, 610, and 620 according to the embodiment shown in fig. 10 correspond to the structure of the solid-state image pickup device 400 according to the third embodiment, but the arrangement of the diffusion preventing film 131 is modified. Structural features equivalent to those of the third embodiment will not be described.
In the solid-state image pickup device 600 shown in fig. 10(a), the diffusion preventing film 131 is provided between the first substrate 104 and the second substrate 108, and functions as an interlayer insulating film included in the multilayer wiring structure 107 provided on the upper portion of the first substrate 104. With this structure, it is possible to omit the step of forming the interlayer insulating film and realize thinning of the solid-state image pickup device. In addition, since the solid-state image pickup device 600 is a back-illuminated type solid-state image pickup device, even if the diffusion preventing film 131 formed of, for example, silicon nitride is provided on the entire top surface of the photoelectric conversion element, for example, reflection originating from a refractive index difference between the diffusion preventing film 131 and a silicon oxide film which is a general interlayer insulating film does not occur. Therefore, diffusion of the high-melting metal from the second substrate 108 can be suppressed while suppressing a decrease in optical characteristics. The structure in which the diffusion preventing film 131 is used as an interlayer insulating film is not limited to the structure shown in fig. 10 (a). For example, an interlayer insulating film provided in the multilayer wiring structure 111 on the upper portion of the second substrate 108 may be used.
Then, in the solid-state image pickup device 610 shown in fig. 10(b), the diffusion preventing film 131 is provided between the first substrate 104 and the second substrate 108. In addition, a diffusion prevention film 131 is formed to contact the high melting point metal compound layer 130 on the source and drain regions 125 and the gate electrode 126 of the second substrate 108. With this structure, the diffusion preventing film 131 can be used as an etching stopper layer when forming a contact hole of the second substrate 108.
Then, in the solid-state image pickup device 620 shown in fig. 10(c), the diffusion preventing film 131 is provided between the first substrate 104 and the second substrate 108, and contacts the upper portion of the first wiring layer 228 of the second substrate 108. The first wiring layer 228 is formed of a copper wire. The diffusion preventing film 131 also functions as a diffusion preventing film that prevents diffusion of copper. With this structure, it is possible to omit the step of forming a diffusion preventing film that prevents diffusion of copper, and to realize thinning of the solid-state image pickup device. The structure in which the diffusion preventing film 131 functions as a diffusion preventing film that prevents diffusion of copper is not limited to the structure shown in fig. 10 (c). For example, the multilayer wiring structure 107 provided on the upper portion of the first substrate 104 may be formed of a copper wire, and the diffusion preventing film 131 may be formed for each wiring layer.
Sixth embodiment
A solid-state image pickup device according to the present embodiment will be described with reference to fig. 11. The structures of the solid-state image pickup devices 700, 710, and 720 according to the embodiment shown in fig. 11 correspond to the structure of the solid-state image pickup device 500 according to the fourth embodiment, but the arrangement of the diffusion preventing film 231 is modified. Structural features equivalent to those of the fourth embodiment will not be described below.
In the solid-state image pickup device 700 shown in fig. 11(a), the diffusion preventing film 231 is provided between the first substrate 204 and the second substrate 208, and functions as an interlayer insulating film included in the multilayer wiring structure 207 provided on the upper portion of the first substrate 104. With this structure, it is possible to omit the step of forming the interlayer insulating film and realize thinning of the solid-state image pickup device. In addition, the solid-state image pickup device 700 is a back-illuminated type solid-state image pickup device. Therefore, even if the diffusion preventing film 231 formed of, for example, silicon nitride is provided on the entire top surface of the photoelectric conversion element, it is not necessary to consider reflection of incident light resulting from a refractive index difference between the diffusion preventing film 231 and a silicon oxide film which is a general interlayer insulating film. Therefore, diffusion of the high-melting-point metal from the second substrate 208 can be suppressed.
In the solid-state image pickup device 710 shown in fig. 11(b), the diffusion preventing film 231 is provided between the first substrate 204 and the second substrate 208, and contacts the upper portion of the first wiring layer 222 of the first substrate 208. The first wiring layer 222 is formed of a copper wire. The diffusion preventing film 231 also functions as a diffusion preventing film that prevents diffusion of copper. With this structure, it is possible to omit the step of forming a diffusion preventing film that prevents diffusion of copper, and to realize thinning of the solid-state image pickup device. The structure in which the diffusion preventing film 231 functions as a diffusion preventing film for preventing diffusion of copper is not limited to the structure shown in fig. 11 (b). For example, as shown in fig. 11(c), in portions of the multilayer wiring structure 207 disposed on the upper portion of the first substrate 204, the second wiring layer 223 may be formed of a copper wire, and the diffusion preventing film 231 may be disposed on the upper portion of the second wiring layer 223. Here, the diffusion preventing film 231 may be disposed on the upper portion of the first wiring layer 222. In order to reduce the capacitance between the wiring layers, patterning of a diffusion prevention film that prevents diffusion of copper can be performed in accordance with the form of wiring at the upper portion of the first wiring layer 222, and a part thereof can be removed. As shown in fig. 11(c), the multilayer wiring structure 211 disposed on the upper portion of the second substrate 208 may be formed of a copper wire, and may include a copper diffusion prevention film 901.
Seventh embodiment
In the embodiments, a case where the photoelectric conversion apparatus according to the present invention is applied to an image pickup system as an image pickup apparatus is described in detail. The image pickup system may be, for example, a digital still camera or a digital video camera. Fig. 13 is a block diagram showing a case where a photoelectric conversion device is applied to a digital still camera as an example of an image pickup system.
In fig. 13, reference numeral 1 denotes a baffle for protecting the lens, reference numeral 2 denotes a lens at which an optical image of an object is formed on the image pickup device 4, and reference numeral 3 denotes an aperture stop for changing the amount of light transmitted through the lens 2. Reference numeral 4 denotes an image pickup apparatus as the solid-state image pickup apparatus described in any of the above-described embodiments. The image pickup device 4 converts an optical image formed by the lens 2 into image data. Here, an AD converter is provided at the image pickup device 4. Specifically, an AD converter is formed at the second chip. Reference numeral 7 denotes a signal processing section that performs various corrections and data compression on the image pickup data output from the image pickup device 4. In addition, in fig. 13, reference numeral 8 denotes a timing generation section that outputs various timing signals to the image pickup device 4 and the signal processing section 7, and reference numeral 9 denotes an overall control/operation section that performs various operations and controls the entire digital still camera. Reference numeral 10 denotes a memory portion that temporarily stores image data, reference numeral 11 denotes an interface portion for performing a recording operation or a reading operation on a recording medium, and reference numeral 12 denotes a removable recording medium such as a semiconductor memory for recording or reading image pickup data. Further, reference numeral 13 denotes an interface section for performing communication with, for example, an external computer. Here, for example, the timing signal may be input from outside the image pickup system, and the image pickup system may include at least the image pickup device 4 and the signal processing section 7 that processes the image pickup signal output from the image pickup device. Although the case where the AD converter is provided at the image pickup device 4 is used in the embodiment, the image pickup device and the AD converter may be provided at different chips. In addition, the signal processing section 7 and the like may be provided in the image pickup device 4. Since the high melting point metal compound layer is formed at the second chip of the image pickup device 4, signal processing and the like can be performed at high speed. Therefore, the photoelectric conversion apparatus according to the present invention is suitable for an image pickup system. By applying the photoelectric conversion apparatus according to the present invention to an image pickup apparatus, high-speed shooting can be performed.
As described above, the solid-state image pickup device according to the present invention enables provision of a solid-state image pickup device that can perform high-speed operation. Also, the diffusion preventing film enables reduction of dark current and suppression of generation of white defects in an image. The embodiments are not limited to the described structure, and the embodiments may be combined as needed. For example, the solid-state image pickup device may include a plurality of diffusion prevention films that prevent diffusion of the high melting point metal.
In addition to the source region, the drain region, and the gate electrode of the transistor, a high-melting-point metal compound layer may be formed at a portion where a potential is applied to a semiconductor region such as a well contact.
INDUSTRIAL APPLICABILITY
The present invention is applicable to a solid-state image pickup device used in an image pickup system such as a digital still camera or a digital video camera.
101 first chip
102 second chip
103 bonding surface
104 first substrate
107 multilayer wiring structure
108 second substrate
111 multilayer wiring structure
112 photoelectric conversion element
124 well
125 source/drain region
126 gate electrode of amplifying transistor
130 high melting point metal compound layer
Claims (20)
1. An image pickup apparatus comprising:
A first substrate having a first transistor and a photoelectric conversion element;
A second substrate having a second transistor included in a signal processing circuit for AD conversion;
A first wiring layer including a first wiring connected to the first transistor;
A first insulating film disposed between the first wiring layer and the first substrate;
A second wiring layer including a second wiring;
A second insulating film disposed between the second wiring layer and the second substrate; and
A film formed of silicon nitride or silicon carbide disposed between the first substrate and the second substrate,
Wherein the first wiring layer is arranged between the second wiring layer and the first substrate,
Wherein a main component of the second wiring is copper,
Wherein a drain region of the first transistor has a first semiconductor region provided in contact with the first insulating film, and the second transistor contains a metal silicide layer, and
Wherein the first substrate has a third transistor, and a drain region of the first transistor is connected to a gate electrode of the third transistor.
2. The device according to claim 1, wherein no metal silicide layer is disposed between the first insulating film and all semiconductor regions of the first substrate.
3. The device according to claim 1, wherein the photoelectric conversion element includes an N-type region and a P-type layer, the P-type layer is provided between the N-type region and the first insulating film, the drain region of the first transistor has a third semiconductor region connected to the plug in the first insulating film, and a metal silicide layer is not arranged between the first insulating film and the first semiconductor region.
4. The apparatus according to claim 1, wherein the first transistor is connected to the photoelectric conversion element, the first substrate has a plurality of photoelectric conversion elements including the photoelectric conversion element, a drain region of the first transistor is a floating diffusion, and an element isolation structure including an STI isolation layer is provided between the plurality of photoelectric conversion elements.
5. An image pickup apparatus comprising:
A first substrate having a first transistor and a photoelectric conversion element;
A second substrate having a second transistor;
A first wiring layer including a first wiring connected to the first transistor;
A first insulating film disposed between the first wiring layer and the first substrate;
A second wiring layer including a second wiring connected to the second transistor; and
A second insulating film disposed between the second wiring layer and the second substrate,
A film formed of silicon nitride or silicon carbide,
Wherein the first wiring layer is arranged between the second wiring layer and the first substrate,
Wherein a drain region of the first transistor has a first semiconductor region provided in contact with the first insulating film, and a drain region of the second transistor has a metal compound layer disposed between the second insulating film and a second semiconductor region of the second substrate,
Wherein a gate electrode of the second transistor is arranged between the second insulating film and the second substrate, and the gate electrode of the second transistor has a metal compound layer,
Wherein a gate electrode of the second transistor is arranged between the first substrate and the second substrate, and
Wherein a film formed of silicon nitride or silicon carbide is arranged between the metal compound layer of the drain region and the second insulating film.
6. The apparatus of claim 5, wherein the first substrate has a first surface in which the first transistor is disposed and a second surface opposite the first surface, wherein a silicide layer of cobalt is not disposed between the second surface and the first wiring layer.
7. The device of claim 6, wherein the metal compound layer comprises cobalt or titanium.
8. An image pickup apparatus comprising:
A first substrate having a first transistor and a photoelectric conversion element;
A second substrate having a second transistor;
A first wiring layer including a first wiring connected to the first transistor;
A first insulating film disposed between the first wiring layer and the first substrate;
A second wiring layer including a second wiring connected to the second transistor, wherein the first wiring layer is arranged between the second wiring layer and the first substrate;
A second insulating film disposed between the second wiring layer and the second substrate;
A third wiring layer which is arranged between the first wiring layer and the second substrate and which includes a third wiring;
A fourth wiring layer arranged such that the second wiring layer is arranged between the fourth wiring layer and the second substrate, and the fourth wiring layer includes a fourth wiring; and
A film formed of silicon nitride or silicon carbide disposed between the first substrate and the second substrate,
Wherein the drain region of the first transistor has a semiconductor region provided in contact with the first insulating film, and the drain region of the second transistor has a metal compound layer disposed between the second insulating film and the semiconductor region of the second substrate, and
Wherein the third wiring is electrically connected to the fourth wiring.
9. The apparatus of claim 8, wherein the second and fourth wiring layers are disposed between the first and second substrates.
10. The apparatus of claim 9, wherein the third wire is in contact with the fourth wire.
11. The apparatus of claim 8, wherein the first and second electrodes are disposed on opposite sides of the substrate,
Wherein the film formed of silicon nitride or silicon carbide is disposed between the second substrate and the first wiring layer.
12. An image pickup apparatus comprising:
A first substrate having a first transistor and a photoelectric conversion element;
A second substrate having a second transistor; and
A wiring structure disposed between the first substrate and the second substrate,
Wherein the drain region of the first transistor has a semiconductor region provided in contact with an insulating film, and the drain region of the second transistor has a metal compound layer, and
Wherein a first film as an interlayer insulating film of the wiring structure and a second film formed of silicon nitride or silicon carbide are arranged between the first substrate and the second substrate.
13. The apparatus according to claim 12, wherein the wiring structure has a wiring layer including a wiring connected to the first transistor, and the second film is arranged between the second substrate and the wiring layer.
14. The apparatus of claim 12, wherein the second film is disposed between the first film and the second substrate.
15. The apparatus according to claim 12, wherein the wiring structure has a wiring layer including a wiring whose main component is copper, and the second film contacts the wiring.
16. An image pickup apparatus comprising:
A first substrate having a first transistor and a photoelectric conversion element;
A second substrate having a second transistor;
A first wiring layer including a first wiring connected to the first transistor;
A first insulating film disposed between the first wiring layer and the first substrate;
A second wiring layer including a second wiring connected to the second transistor;
A second insulating film disposed between the second wiring layer and the second substrate; and
A light shielding film arranged such that a first substrate is arranged between a first insulating film and the light shielding film,
Wherein the first wiring layer is arranged between the second wiring layer and the first substrate,
Wherein the drain region of the first transistor has a semiconductor region provided in contact with the first insulating film, and the drain region of the second transistor has a metal compound layer disposed between the second insulating film and the semiconductor region of the second substrate,
Wherein a film formed of silicon nitride or silicon carbide is arranged between the first substrate and the second substrate, and
Wherein a source of the first transistor is connected to the photoelectric conversion element, and the first substrate has an element isolation structure including an insulating film as an STI isolation layer.
17. An image pickup apparatus comprising:
A first substrate having a first transistor and a photoelectric conversion element;
A second substrate having a second transistor;
A first wiring layer including a first wiring connected to the first transistor;
A first insulating film disposed between the first wiring layer and the first substrate;
A second wiring layer including a second wiring connected to the second transistor;
A second insulating film disposed between the second wiring layer and the second substrate; and
A film formed of silicon nitride or silicon carbide disposed between the first substrate and the second substrate,
Wherein the first substrate has a third transistor included in a source follower circuit,
Wherein the first wiring layer is arranged between the second wiring layer and the first substrate, and
Wherein the drain region of the first transistor has a semiconductor region provided in contact with the first insulating film, and the drain region of the second transistor has a metal compound layer disposed between the second insulating film and the semiconductor region of the second substrate.
18. The device according to any one of claims 1 to 17, wherein a control signal is supplied from a control circuit of the second substrate to the gate electrode of the first transistor.
19. An image pickup system comprising:
The device of any one of claims 1-18; and
A lens for forming an optical image on the device,
Wherein the apparatus further comprises:
A microlens overlapping the photoelectric conversion element; and
A light shielding film disposed between the microlens and the first substrate.
20. An image pickup system comprising:
The device of any one of claims 1-18; and
A signal processing section for processing a signal outputted from the device.
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| CN200980163052.8A CN102668081B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup apparatus and image picking system |
| CN201510301075.8A CN105023930B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup apparatus and image picking system |
| CN201510540844.XA CN105185801B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup device and image pickup system |
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| JP2001111022A (en) * | 1999-08-05 | 2001-04-20 | Canon Inc | Photoelectric conversion device and method of fabrication thereof, image information processor |
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| KR100610481B1 (en) * | 2004-12-30 | 2006-08-08 | 매그나칩 반도체 유한회사 | Image sensor with enlarged photo detecting area and method for fabrication thereof |
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| US7504336B2 (en) * | 2006-05-19 | 2009-03-17 | International Business Machines Corporation | Methods for forming CMOS devices with intrinsically stressed metal silicide layers |
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