CN105023930B - Solid-state image pickup apparatus and image picking system - Google Patents
Solid-state image pickup apparatus and image picking system Download PDFInfo
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- CN105023930B CN105023930B CN201510301075.8A CN201510301075A CN105023930B CN 105023930 B CN105023930 B CN 105023930B CN 201510301075 A CN201510301075 A CN 201510301075A CN 105023930 B CN105023930 B CN 105023930B
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Abstract
The present invention relates to solid-state image pickup apparatus and image picking system.It is configured according to the solid-state image pickup apparatus of the present invention by being laminated the first substrate of the gate electrode with photo-electric conversion element and transfer transistor with the second substrate with peripheral circuit portion.First substrate does not have high melting point metal compound layer, and second substrate has high melting point metal compound layer.This simple configuration enables the transistor in peripheral circuit portion to be operated with high speed, while suppresses the deterioration of the characteristic of photo-electric conversion element, so that the signal read operation of high speed can be carried out.
Description
The application be Application No. 200980163052.8, the applying date be December 26, entitled " solid-state in 2009
The divisional application of the application for a patent for invention of image pick-up device and image picking system ".
Technical field
The present invention relates to rear surface irradiation type solid-state image pickup apparatus.
Background technology
The solid-state image pickup apparatus of fair speed in recent years has caused to propose to set semiconductor chemical combination at transistor
The structure of nitride layer.
PTL 1 discusses solid-state image pickup apparatus as follows, wherein not on the photodetector of photoelectric conversion part
Refractory metal semiconductor compound layers are set, and set at peripheral circuit portion (peripheral circuit portion) place
Put refractory metal semiconductor compound layers.
PTL 2 discusses the solid-state image pickup apparatus of rear surface irradiation type, in the solid-state image pickup of the rear surface irradiation type
In device, in order to increase the sensitivity of photo-electric conversion element, the picture with the photo-electric conversion element and signal read circuit is included
The substrate in plain portion and the circuit for comprising mean for driving pixel portion are mutually viscous to handle the substrate of the peripheral circuit of read output signal
Connect.
Quotation list
Patent document
PTL 1：Japanese Patent Publication No.2001-111022
PTL 2：Japanese Patent Publication No.2009-170448
The content of the invention
Technical problem
In the structure for setting refractory metal semiconductor compound layers in peripheral circuit portion in PTL 1, due to Gao Rong
Point metal is set on the same substrate, and therefore, refractory metal can spread photo-electric conversion element.Even if photo-electric conversion element
Surface protected by dielectric film, due to for example exist on dielectric film formed refractory metal the step of, therefore, refractory metal
Also can become to spread in dielectric film.In addition, for example, due to being produced as the result of refractory metal pollution photo-electric conversion element
Leakage current, therefore can occur White Defects in the picture.Also, in order to form in PTL 1 structure discussed, it is necessary to really
It is fixed where to form refractory metal semiconductor compound layers on the same substrate, thus complicate processing.
Therefore, it is an object of the invention to by using simple structure, there is provided suppressing to cause for example to produce white
The solid-state of high melting point metal compound layer is set while the reduction of the characteristic of the photo-electric conversion element of defect in peripheral circuit portion
Image pick-up device.
The solution of problem
The present invention provides a kind of solid-state image pickup apparatus, wherein, photo-electric conversion element is set and comes from light for transmitting
The first substrate of the gate electrode of the electric charge of electric transition element is based on electricity caused by photo-electric conversion element with reading is provided for
The second substrate of the peripheral circuit portion of the signal of lotus is layered on top of each other, wherein, second substrate has high melting point metal compound layer, and
And first substrate does not have high melting point metal compound layer.
The beneficial effect of the present invention
In accordance with the invention it is possible to provide the reduction in the characteristic for suppressing photo-electric conversion element by using simple structure
The solid-state image pickup apparatus of high melting point metal compound layer is set in peripheral circuit portion simultaneously.
Brief description of the drawings
Fig. 1 is the sectional drawing for describing the solid-state image pickup apparatus of first embodiment.
Fig. 2 is the sectional drawing for describing the solid-state image pickup apparatus of second embodiment.
Fig. 3 is the sectional drawing for describing the solid-state image pickup apparatus of 3rd embodiment.
Fig. 4 represents the manufacture method of the solid-state image pickup apparatus according to 3rd embodiment.
Fig. 5 represents the manufacture method of the solid-state image pickup apparatus according to 3rd embodiment.
Fig. 6 is the sectional drawing for describing the solid-state image pickup apparatus of the 5th embodiment.
Fig. 7 represents the manufacture method of the solid-state image pickup apparatus according to fourth embodiment.
Fig. 8 represents the manufacture method of the solid-state image pickup apparatus according to fourth embodiment.
Fig. 9 represents the manufacture method of the solid-state image pickup apparatus according to fourth embodiment.
Figure 10 is the sectional drawing for describing the solid-state image pickup apparatus of the 5th embodiment.
Figure 11 is the sectional drawing for describing the solid-state image pickup apparatus of sixth embodiment.
Figure 12 is the exemplary circuit according to the solid-state image pickup apparatus of the present invention.
Figure 13 is the block diagram for showing the image picking system according to the 7th embodiment.
Embodiment
Formed by being layered on top of each other first substrate and second substrate according to solid-state image pickup apparatus of the invention, wherein the
Gate electrode and second substrate of one substrate with photo-electric conversion element and for transmission are with peripheral circuit portion.Not in the first base
Plate sets high melting point metal compound layer, and sets high melting point metal compound layer in second substrate.By this structure, become
It is easier to determine where to form compound layer, and becomes able to make the transistor at peripheral circuit portion to be grasped with higher speed
Make, and to perform signal read operation at a high speed, while the characteristic for suppressing photo-electric conversion element reduces.
Hereinafter, it will be described in detail with reference to the accompanying drawings the present invention.
First embodiment
Reference picture 1 and Figure 12 are described into the first embodiment of the present invention.
First, reference picture 12 describes the exemplary circuit of the solid-state image pickup apparatus according to first embodiment.Figure 12 institutes
The solid-state image pickup apparatus 300 shown includes the pixel portion 301 of the multiple photo-electric conversion elements of arrangement and had to be used for for execution
The periphery of the control circuit of the driving operation of signal and the signal processing circuit with processing read output signal is read from pixel portion 301
Circuit portion 302.
In pixel portion 301, multiple photo-electric conversion elements 303, transfer transistor 304, amplifying transistor 306 are set and answered
Bit transistor 307.Structure comprising at least one photo-electric conversion element 303 is defined as pixel.A pixel in embodiment
Include photo-electric conversion element 303, transfer transistor 304, amplifying transistor 306 and reset transistor 307.Transfer transistor 304
Source electrode be connected with photo-electric conversion element 303, also, the grid electricity of the drain region of transfer transistor 304 and amplifying transistor 306
Pole connects.Node corresponding with the gate electrode of amplifying transistor 306 is defined as node 305.Reset transistor connects with node 305
Connect, also, the potential of node 305 is set as any potential (for example, reset potential).Here, amplifying transistor 306 be source electrode with
With a part for device circuit, also, signal corresponding with the potential of node 305 is output to signal wire RL.
Peripheral circuit portion 302 includes vertical the sweeping for the gate electrode supply control signal for being used for the transistor to pixel portion 301
Scanning circuit VSR.Peripheral circuit portion 302 includes the signal that holding exports from pixel portion 301 and comprising for amplifying, adding, AD turns
The reading circuit RC for the signal processing circuit changed etc..In addition, peripheral circuit portion 302 is sequentially output from reading circuit comprising control
The horizontal scanning circuit HSR of the control circuit of the timing of RC signal.
Here, by being layered on top of each other solid-state image pickup apparatus 300 of two chips formation according to first embodiment.Two
Chip is the first chip 308 of the photo-electric conversion element 303 comprising pixel portion 301 and transfer transistor 304, and includes pixel portion
301 amplifying transistor 306 and reset transistor 307 and the second chip 309 of peripheral circuit portion 302.In this configuration, control
Signal processed is fed into the transmission crystal of the first chip 308 by the peripheral circuit portion 302 of connecting portion 310 from the second chip 309
The gate electrode of pipe 304.Signal caused by the photo-electric conversion element 303 of the first chip 308 by with transfer transistor 304
The connecting portion 311 of drain region connection is read out to node 305.Crystal is resetted by being set by this way on another chip
Pipe 307 and amplifying transistor 306, by increasing capacitance it is possible to increase the area of photo-electric conversion element 303, and increase sensitivity.If opto-electronic conversion
The area of element 303 is identical, then the photo-electric conversion element 303 of many can be provided, so that can increase the number of pixel
Amount.
Solid-state image pickup apparatus below with reference to Fig. 1 descriptions according to embodiment.Fig. 1 is and the solid-state figure shown in Figure 12
The sectional drawing of solid-state image pickup apparatus 100 as corresponding to pick device 300.Fig. 1 is and the photo-electric conversion element shown in Figure 12
303rd, sectional drawing corresponding to transfer transistor 304 and amplifying transistor 306.Other parts are not described.Fig. 1 represents to be used for two
The structure of pixel.
Fig. 1 represents the first chip 101, the second chip 102 and the composition surface 103 of the first chip and the second chip.The
One chip 101 is corresponding with the first chip 308 shown in Figure 12, also, the second chip 309 shown in second chip 102 and Figure 12
It is corresponding.
First chip 101 has first substrate 104.The surface of the formation transistor of first substrate 104 is interarea 105, the
The opposite to that face of one substrate is the back side 106.Photo-electric conversion element 303 and transfer transistor 304 shown in pie graph 12
It is partially disposed within first substrate 104.Such as it is that the wiring (aluminum steel) of aluminium includes the He of the first wiring layer 122 with main component
The Miltilayer wiring structure 107 of second wiring layer 123 is arranged on the upper of the side of interarea 105 of the first substrate 104 of the first chip 101
In portion.Here, multiple interlayer dielectrics of Miltilayer wiring structure 107 are described as integral dielectric film.
Second chip 102 has second substrate 108.The surface of the formation transistor of second substrate 108 is interarea 109, and
And the opposite to that face of the second substrate is the back side 110.Such as include the first wiring layer 128 and the second cloth with aluminum steel
The Miltilayer wiring structure 111 of line layer 129 is arranged on the top of interarea 109 of second substrate 108.Even if herein, multilayer
Multiple interlayer dielectrics of wire structures 111 are also been described as integral dielectric film.Amplifying transistor 306 shown in Figure 12 is set
On second substrate 108.In the de-scription, in each chip, the direction from the interarea of substrate to the back side is defined as downward side
To or deep direction, also, the direction from the back side to interarea is defined as upwardly direction or shallow direction.
Here, in the solid-state image pickup apparatus according to embodiment, the substrate interarea 105 and second of the first chip 101
The substrate interarea 109 of chip 102 is layered on top of each other to face each other.In Fig. 1, in the first chip 101 and the second chip 102
In the structure of connecting portion, floating diffusion region (FD regions) 113 and the amplification of the second chip 102 of the first chip 101 are only represented
Connection between the gate electrode of transistor 126.Specifically, the FD regions 113 of the first chip 101 pass through Miltilayer wiring structure
107th, connecting portion 311 and Miltilayer wiring structure 111 are connected with the gate electrode 126 of amplifying transistor.It is brilliant to transmission shown in Figure 12
The connecting portion 310 that the gate electrode 114 of body pipe supplies control signal is not illustrated in Fig. 1.Picked up according to the solid-state image of embodiment
It is the solid-state image pickup apparatus from the rear surface irradiation type of the incident light of the back side 106 of first substrate 104 to take device.
It will be described in each chip.First, trap 115, the N-type charge accumulation region 112 of composition photo-electric conversion element and biography
The gate electrode 114 of transistor is sent to be arranged on the first substrate 104 of the first chip 101.Also, form the P of photo-electric conversion element
Type sealer is arranged on the top in charge accumulation region 112.Also, P-type semiconductor region 116, element isolation zone
Domain 117 and the drain region of transfer transistor 113 are arranged on first substrate 104.Trap 115 is to set transistor and opto-electronic conversion
The semiconductor regions of element, also, can be N-type or p-type herein.P-type semiconductor region 116 can suppress in first substrate
Caused dark current on interface between the silicon and silicon oxide film at 104 back side 106, and even can be used as photo-electric conversion element
A part.Charge accumulation region 112 is accumulated in electric charge caused by photo-electric conversion element (electronics), and is passing in Fig. 1
Sending the gate electrode side of transistor has p-type sealer.Element isolation region 117 is formed by P-type semiconductor region, also,
It is not shown, can still have the component isolation structure of the dielectric film comprising such as locos layer or STI separation layers.
The drain region 113 of transfer transistor is FD regions, and the node 305 shown in pie graph 12.First base of the first chip 101
The side of the back side 106 of plate 104 has anti-reflective film 118, photomask 119, colour filter 120 and lenticule 121 comprising planarization layer.
Then, the source region of the amplifying transistor 306 in trap 124, Figure 12 and drain region 125 and the and of gate electrode 126
Element isolation region 127 is arranged on the second substrate 108 of the second chip 102.Trap 124 is P-type semiconductor region.Here,
Transistor (the amplification crystal shown in Figure 12 being arranged at the second chip 102 of the solid-state image pickup apparatus according to embodiment
Pipe 306) source region and drain region 125 include high melting point metal compound layer 130.It is arranged at the second chip 102
The region of peripheral circuit portion 302 shown in pie graph 12 also similarly has the transistor for including high melting point metal compound layer
(not shown).When using silicon in semiconductor substrate, high melting point metal compound layer is for example using being used as refractory metal
Cobalt or titanium silicide.
High melting point metal compound layer is not formed in the transistor of such as first substrate 104.The insulation of Miltilayer wiring structure
Film is arranged on the top of the interarea 105 of first substrate 104.Therefore, high melting point metal compound is not formed in first substrate 104
Layer, also, the transistor for being arranged on the peripheral circuit portion of second substrate has high melting point metal compound layer, enabling dropping
Increase the service speed of transistor while low noise.In addition, by only being set in the second chip 102 comprising this high-melting-point gold
Belong to the transistor of compound layer, refractory metal being mixed into photo-electric conversion element can be reduced, and reduce due to high-melting-point gold
Noise caused by the mixing of category.Due to that need not be formed the region of setting high melting point metal compound layer on the same substrate and not
The region of high melting point metal compound layer is set, therefore, it is not necessary to form such as diaphragm to prevent high melting point metal compound layer
Formation, i.e. enable to each substrate that there is simple structure and it manufactured by using simple step.
In embodiment, in addition to photo-electric conversion element, FD regions are also formed in first substrate 104.This is because, such as
Fruit high melting point metal compound layer is arranged on photo-electric conversion element and composition is maintained at signal electricity caused by photo-electric conversion element
The semiconductor regions in the FD regions of lotus, then be mixed into signal electricity when refractory metal is mixed into caused noise in semiconductor regions
In lotus.If amplifying transistor is arranged on first substrate, then does not form high melting point metal compound layer in amplifying transistor.
Although each wiring layer is formed by aluminum steel in embodiment, each wiring layer can be the wiring of copper by main component
(copper cash) formation.The nonproliferation film of the diffusion of copper is prevented also to may be disposed at the top of copper cash, also, prevent the diffusion of copper
Nonproliferation film can be subjected to composition.
Second embodiment
Reference picture 2 is described into the solid-state image pickup apparatus according to the present embodiment.According to the solid-state image pickup of embodiment
Device part similar with the solid-state image pickup apparatus according to first embodiment is circuit shown in its circuit and Figure 12 etc.
Together, also, both differences are its chip laminate structure.The description of circuit will be omitted below.Fig. 2 institutes explained below
The structure shown.
Fig. 2 is the sectional drawing of solid-state image pickup apparatus 200 corresponding with the circuit shown in Figure 12.Fig. 2 is and Figure 12 institutes
The sectional drawing of two pixels corresponding to photo-electric conversion element 303, transfer transistor 304 and the amplifying transistor 306 shown, and not
Other parts are shown.
Fig. 2 represents the first chip 201, the second chip 202 and the composition surface 203 of the first chip and the second chip.The
One chip 201 is corresponding with the first chip 308 shown in Figure 12, also, the second chip 309 shown in second chip 202 and Figure 12
It is corresponding.
First chip 201 has first substrate 204.The surface of the formation transistor of first substrate 204 is interarea 205, the
The opposite to that face of one substrate is the back side 206.Photo-electric conversion element 303 and transfer transistor 304 shown in pie graph 12
It is partially disposed within first substrate 204.Such as the multilayer comprising the first wiring layer 222 and the second wiring layer 223 with aluminum steel
Wire structures 207 are arranged on the top of interarea 205 of first substrate 204.Here, multiple layers of Miltilayer wiring structure 207
Between dielectric film be described as integral dielectric film.
Second chip 202 has second substrate 208.The surface of the formation transistor of second substrate 208 is interarea 209, and
And the opposite to that face of second substrate is the back side 210.Such as include the first wiring layer 228 and the second wiring with aluminum steel
The Miltilayer wiring structure 211 of layer 229 is arranged on the top of interarea 209 of second substrate 208.Even if herein, laminates
Multiple interlayer dielectrics of cable architecture 211 are also been described as integral dielectric film.Amplifying transistor 306 shown in Figure 12 is arranged on
Second substrate 208.
Here, in the solid-state image pickup apparatus according to embodiment, the interarea 205 and second substrate of first substrate 204
208 back side 210 is layered on top of each other to face each other.In fig. 2, in the first chip 201 and the knot of the connecting portion of the second chip 202
In structure, only show the chips 202 of FD 213 and second of the first chip 201 amplifying transistor gate electrode 226 between connection.
Specifically, the FD regions 213 of the first chip 201 pass through Miltilayer wiring structure 207, connecting portion 311 and Miltilayer wiring structure 211
It is connected with the gate electrode 226 of amplifying transistor.Here, set and form the part of connecting portion 311 and relevant with second substrate 208
Through electrode 235.By through electrode, the gate electrode 226 of FD regions 213 and amplifying transistor is connected with each other.Do not have in fig. 2
Have and represent to supply the connecting portion 310 shown in Figure 12 of control signal to the gate electrode 214 of transfer transistor.According to consolidating for embodiment
State image pick-up device is the solid-state image pickup apparatus from the rear surface irradiation type of the incident light of the back side 206 of first substrate 204.
Each chip is described more fully below.Trap 215, the N-type charge accumulation region 212 for forming photo-electric conversion element and transmission
The gate electrode 214 of transistor is arranged on the first substrate 204 of the first chip 201.Also, P-type semiconductor region 216, element
The drain region 213 of area of isolation 217 and transfer transistor is arranged on first substrate 204.The first substrate of first chip 201
204 side of the back side 206 has anti-reflective film 218, photomask 219, colour filter 220 and lenticule 121 comprising planarization layer.So
Afterwards, the source region of the amplifying transistor 306 in trap 224, Figure 12 and drain region 225 and gate electrode 226 and element isolation zone
Domain 227 is arranged on the second substrate 208 of the second chip 202.In addition, the first wiring layer 228 and the second wiring layer 229 are set
Put on the top of second substrate 208, also, insulating barrier 234 is arranged at the deepest part of second substrate 208.First chip
201 and second chip 202 structure it is similar with those of first embodiment, therefore they will not be described below.
In a second embodiment, adhesive linkage 232 and support substrate 233 further are set on the top of the second chip 202.Will
Insulating barrier, adhesive linkage 232 and support substrate 233 in second embodiment is described below.
Here, the transistor of the second chip 202 of the solid-state image pickup apparatus according to embodiment is arranged on (shown in Figure 12
Amplifying transistor 306) source region and drain region 225 and gate electrode 226 there is high melting point metal compound layer 230.
The region for the peripheral circuit portion 302 being arranged on shown in the pie graph 12 of the second chip 202 also similarly has comprising high-melting-point gold
Belong to the transistor (not shown) of compound layer.When using silicon in semiconductor substrate, high melting point metal compound layer is for example
Using being used as the cobalt of refractory metal or the silicide of titanium.Such as the transistor for being arranged on the peripheral circuit portion of second substrate has
High melting point metal compound layer, enabling increase the speed of the operation of transistor.In addition, by only being set in the second chip 202
The transistor for including this high melting point metal compound layer is put, can be in the spy for the photo-electric conversion element for suppressing the first chip 201
Property reduce while reduce refractory metal being mixed into photo-electric conversion element.It will be set due to that need not be formed on the same substrate
The region of high melting point metal compound layer and the region for being not provided with high melting point metal compound layer, are for example protected therefore, it is not necessary to be formed
Cuticula is to prevent the formation of high melting point metal compound layer, i.e. enable to each substrate have simple structure and by using
Simple step manufactures it.
3rd embodiment
Reference picture 3 is described into the solid-state image pickup apparatus according to the present embodiment.According to the solid-state image pickup of embodiment
Device is corresponding with the solid-state image pickup apparatus 100 according to first embodiment, and is with its difference, and it is anti-that it includes diffusion
Only film.Structure shown in Fig. 3 explained below.It will not be described with first embodiment identical architectural feature.
In the solid-state image pickup apparatus 400 shown in Fig. 3, nonproliferation film 131 is arranged on the first chip 101 and
Between two chips 102.By setting this nonproliferation film 131, can suppress to be arranged on the refractory metal of the second chip
The refractory metal of compound layer is diffused into Miltilayer wiring structure 111 and 107 and refractory metal is mixed into and forms FD regions
In the photo-electric conversion element of semiconductor regions and the first chip.Therefore, it is possible to further suppress to cause (image) White Defects
Leakage current or when refractory metal is mixed into the generation of caused dark current in semiconductor regions.
Reference picture 4 and Fig. 5 are described to the manufacture method of the solid-state image pickup apparatus 400 shown in Fig. 3.First, in Fig. 4
(a) in, the photodiode for being changed into the first substrate 104 shown in Fig. 3 is set to form part (hereinafter referred to as " PD forms part ")
401 and it is changed into the circuit of second substrate 108 shown in Fig. 3 and forms part 402.These parts are such as silicon semiconductor substrate, and
And can be any conduction type.PD forms part 401 and includes P-type semiconductor region 116 and insulating barrier 403.PD forms part
401 use SOI substrate, also, can form P-type semiconductor region 116 by epitaxial growth or ion implanting.
Then, as shown in Fig. 4 (b), the gate electrode 114 and electric charge of such as transfer transistor are formed in PD formation parts 401
The element of reservoir area 112.Formed in PD and Miltilayer wiring structure 107 is formed on the top of part 401.Miltilayer wiring structure 107
With the first wiring layer 122 and the second wiring layer 123.First wiring layer 122 and the second wiring layer 123 include multiple wirings.It is real
It is aluminum steel to apply the wiring in example.Miltilayer wiring structure 107 has the interlayer dielectric for being used for mutually insulated wiring.For example, interlayer
Dielectric film is arranged between the first wiring layer 122 and the gate electrode of transfer transistor and the first wiring layer 122 and the second cloth
Between line layer 123.In order to form Miltilayer wiring structure 107, in general semiconductor technology can be used.Finally, covering the is formed
The interlayer dielectric of two wiring layers, also, its some is removed so that and some wirings of the second wiring layer 123 are exposed.
The second wiring layer 123 exposed forms connecting portion 311.PD forms the surface of the gate electrode of the formation transfer transistor of part 401
It is changed into the interarea 105 of first substrate described below.
In Fig. 4 (b), form the formation trap 124 of part 402 in circuit and include the transistor of such as amplifying transistor 306
Peripheral circuit portion.Then, refractory metal is deposited over the source region of such as transistor, drain region 125 and gate electrode
On 126 precalculated position, also, heat treatment is performed, be consequently formed high melting point metal compound layer 130.Then, formed in circuit
Miltilayer wiring structure 111 is formed at the top of part 402.Miltilayer wiring structure 111 has the first wiring layer 128 and the second wiring layer
129.The structure and manufacture method of Miltilayer wiring structure 111 form those classes of the Miltilayer wiring structure 107 of part 401 with PD
Seemingly.Then, after the second wiring layer 129 is formed, the nonproliferation film 131 of the second wiring layer 129 of covering is formed.Diffusion preventing
Film 131 is formed by such as silicon nitride or carborundum.Nonproliferation film 131 is used to suppress to form the diffusion high-melting-point of part 401 to PD
Metal.Then, some of nonproliferation film 131 is removed so that forms the one of the second wiring layer 129 of connecting portion 311
A little wirings are exposed.Here, nonproliferation film can be removed by etching or CMP technique.Here, circuit forms part 402 and is changed into
Second substrate 108.The interarea 109 of second substrate 108 is determined as shown in Fig. 4 (b).
Then, as shown in Fig. 5 (c), PD forms part 401 and the interarea (105,109) of circuit formation part 402 is set
To face each other and being joined together for example, by dimpling block.
Finally, as shown in Fig. 5 (d), the undesirable part 404 of PD formation parts 401 is removed for example, by CMP or etching
With insulating barrier 403 so that PD formation parts 401 are thinner, to form first substrate 104.Then, at the back side of first substrate 104
The anti-reflective film 118 formed by carborundum is formed at 106 top.After anti-reflective film 118 is formed, in anti-reflective film 118
Top forms tungsten film so as to composition, is consequently formed photomask 119.Then, planarization layer and colour filter 120 are formed, and is formed
Lenticule 121.This manufacture method makes it possible to manufacture the solid-state image pickup apparatus 400 shown in Fig. 3.
Here,, can be in height after the interlayer dielectric of Miltilayer wiring structure 107 is formed according to the structure of embodiment
Temperature is lower or performs heat treatment for a long time, to improve the characteristic such as recovered from defect of photo-electric conversion element.If the
One substrate has high melting point metal compound layer, then high melting point metal compound layer is formed before interlayer dielectric is formed.
After interlayer dielectric is formed, due to such as refractory metal diffusion the problem of, it becomes difficult to when at high temperature or long
Between perform heat treatment.Therefore, according to the structure of embodiment, due to can optionally perform for photo-electric conversion element from lacking
The heat treatment recovered is fallen into, therefore, it is possible to suppress the reduction of the characteristic of photo-electric conversion element.
In desired form, in order to increase the connection resistance for the contact for being arranged on FD regions, it is desirable to be connected with plug
Semiconductor regions on perform ion implanting and heat treatment.But if as described above, first substrate has refractory metal
Compound layer, then become to be difficult to performing heat treatment in the contact forming step implemented after forming interlayer dielectric.Therefore,
According to the structure of embodiment, high-melting-point gold can be not provided with while peripheral circuit portion sets high melting point metal compound layer
Sufficiently heat treatment is performed in the step of belonging to the FD regions formation contact of compound layer.Therefore, it is possible to reduce the height in FD regions
The contact at FD regions is suitably connected while the pollution of melting point metals.
As described above, according to the solid-state image pickup apparatus of embodiment, can be in the transistor at increase peripheral circuit portion
Operation speed and further suppress the dark current at photo-electric conversion element while increase the speed of signal read operation
Produce.
Fourth embodiment
Reference picture 6 is described into the solid-state image pickup apparatus according to the present embodiment.Picked up according to the solid-state image of the present embodiment
Take the structure of device corresponding with the structure of the solid-state image pickup apparatus according to second embodiment, be with its difference, it is wrapped
Containing nonproliferation film.Structure shown in Fig. 6 explained below.The architectural feature being equal with second embodiment will not be described.
In the solid-state image pickup apparatus 500 shown in Fig. 6, the nonproliferation film 231 of the diffusion of refractory metal is prevented
It is arranged between the first chip 210 and the second chip 202.By setting this nonproliferation film 231, can further suppress
The refractory metal of the high melting point metal compound layer of the second chip is arranged on to the photo-electric conversion element and composition of the first chip
The semiconductor regions in FD regions are mixed into.Therefore, it is possible to suppress the generation of (image) White Defects or dark current.Diffusion preventing
Film 231 is the film formed by such as silicon nitride or carborundum.
The manufacture method of solid-state image pickup apparatus 500 shown in Fig. 6 is described next, with reference to Fig. 7~9.First, scheming
In 7 (a), the photodiode for being changed into the first substrate 204 shown in Fig. 6 is set to form substrate (hereinafter referred to as " PD forming portions
Part ") 501 and it is changed into the circuit of second substrate 208 shown in Fig. 6 and forms part 502.PD forms part 501 and includes p-type semiconductor
Region 216 and insulating barrier 503.PD forms part 501 and uses SOI substrate, also, can be formed by epitaxial growth or ion implanting
P-type semiconductor region 216.Circuit forms part 502 using SOI substrate and includes insulating barrier 234.
Then, formed in the PD shown in Fig. 7 (b) in part 501, form gate electrode 214, the electric charge of such as transfer transistor
Reservoir area 212 and the element of trap 215.Formed in PD and Miltilayer wiring structure 207 is formed on the top of part 501.Multilayer wiring
Structure 207 includes the first wiring layer 222 and the second wiring layer 223.The structure and manufacture method and the 3rd of Miltilayer wiring structure 207
Those in embodiment are similar, therefore will not describe them.Then, the interlayer dielectric of the second wiring layer 223 of covering is formed, and
And some of interlayer dielectric is removed so that the wiring of the second wiring layer 223 is exposed.Second wiring layer 223 is formed
Connecting portion 311.Then, the second wiring layer 223 of covering and the nonproliferation film formed by such as silicon nitride or carborundum are formed
231.The interlayer dielectric for covering the second wiring layer 233 may be disposed between the second wiring layer 223 and nonproliferation film 231.
Formed in the circuit shown in Fig. 7 (b) in part 502, form the transistor and trap 224 for including amplifying transistor.So
Afterwards, refractory metal is deposited on the precalculated position of the source region of such as transistor, drain region and gate electrode, also, is held
Row heat treatment, is consequently formed high melting point metal compound layer 230.Then, formed in circuit on the top of part 502 and form multilayer
Wire structures 211.Miltilayer wiring structure 211 has the first wiring layer 228.The structure and manufacture method of first wiring layer 228 with
3rd embodiment it is similar.
Then, in Fig. 8 (c), bond layer is formed on the top for the first wiring layer 228 that circuit is formed at part 502
506 and support substrate 507.Then, the undesirable part 504 of circuit formation part 502 is removed by ablation or etching, and
And form second substrate 208.
In Fig. 8 (d), the PD for the first substrate 204 being changed into shown in Fig. 6 forms the interarea 205 and second substrate of part 501
208 back side 210 is layered on top of each other to face each other, also, is joined together for example, by dimpling block.Then, first is viscous
The support substrate 507 of layer 506 and first is connect to be removed.Then, formed on the top of the first wiring layer 228 of second substrate 208
Interlayer dielectric, also, form the through electrode 235 for the electrical connection with first substrate 204.In general semiconductor can be passed through
Technique manufactures through electrode 235.Then, through electrode 235 is covered, also, forms the second wiring layer 229.
Then, as shown in figure 9, setting the He of bond layer 232 on the top of the second wiring layer 229 of second substrate 208
Support substrate 233.Then, the undesirable portion 505 of PD formation parts 501 such as by CMP or etching is removed, also, is formed
First substrate 204.Then, the anti-reflective film formed by such as silicon nitride is formed on the top at the back side 206 of first substrate 204
218.Then, the photomask 219 formed by such as tungsten is formed on the top of anti-reflective film 218.Also, in the upper of photomask 219
Portion forms planarization layer and colour filter 120, also, forms lenticule 212.This manufacture method makes it possible to manufacture shown in Fig. 6
Solid-state image pickup apparatus 500.
In the structure according to embodiment, at the heat due to can optionally perform contact or photo-electric conversion element
Reason, therefore, it is possible to suppress the increase of the connection resistance of the reduction of the characteristic of photo-electric conversion element and contact.
As described above, according to the solid-state image pickup apparatus of embodiment, can be in the transistor at increase peripheral circuit portion
Service speed and further suppress the production of the dark current at photo-electric conversion element while increase the speed of signal read operation
It is raw.
5th embodiment
Reference picture 10 is described into the solid-state image pickup apparatus according to the present embodiment.Embodiment according to Figure 10 is consolidated
The structure of state image pick-up device 600,610 and 620 and the structure pair of the solid-state image pickup apparatus 400 according to 3rd embodiment
Should, but the setting of nonproliferation film 131 is changed.The architectural feature being equal with 3rd embodiment will not be described.
In the solid-state image pickup apparatus 600 shown in Figure 10 (a), nonproliferation film 131 is arranged on first substrate 104
Between second substrate 108, and as the layer being contained in the Miltilayer wiring structure 107 on the top for being arranged on first substrate 104
Between dielectric film.By means of this structure, the step of forming interlayer dielectric can be omitted, and realize solid-state image pickup apparatus
Slimming.Further, since solid-state image pickup apparatus 600 is the solid-state image pickup apparatus of rear surface irradiation type, therefore, even if by
Such as the nonproliferation film 131 that silicon nitride is formed is arranged on the whole top surface of photo-electric conversion element, for example, also occurring without source
Self-diffusion prevents film 131 and the reflection as the refringence between the silicon oxide film of in general interlayer dielectric.Therefore, it is possible to
Suppress the diffusion of the refractory metal from second substrate 108 while suppressing optical characteristics and reducing.Nonproliferation film 131 is used
The structure for making interlayer dielectric is not limited to structure shown in Figure 10 (a).It is, for example, possible to use it is arranged on second substrate 108
Interlayer dielectric in the Miltilayer wiring structure 111 on top.
Then, in the solid-state image pickup apparatus 610 shown in Figure 10 (b), in first substrate 104 and second substrate 108
Between set nonproliferation film 131.In addition, nonproliferation film 131 is formed as contacting source region and the drain electrode of second substrate 108
High melting point metal compound layer 130 on region 125 and gate electrode 126.By means of this structure, nonproliferation film can be used
131 as the contact hole for forming second substrate 108 when etch stopper.
Then, in solid-state image pickup apparatus 620 shown in Figure 10 (c), nonproliferation film 131 is arranged on first substrate
Between 104 and second substrate 108, and contact the top of the first wiring layer 228 of second substrate 108.First wiring layer 228 by
Copper cash is formed.Nonproliferation film 131 also serves as the nonproliferation film for the diffusion for preventing copper.By means of this structure, can omit
The step of formation prevents the nonproliferation film of diffusion of copper, and realize the slimming of solid-state image pickup apparatus.Nonproliferation film
131 are used as preventing the structure of the nonproliferation film of the diffusion of copper to be not limited to the structure shown in Figure 10 (c).For example, it is arranged on first
Miltilayer wiring structure 107 on the top of substrate 104 can be formed by copper cash, also, can form diffusion preventing for each wiring layer
Film 131.
Sixth embodiment
Reference picture 11 is described into the solid-state image pickup apparatus according to the present embodiment.Embodiment according to Figure 11 is consolidated
The structure of state image pick-up device 700,710 and 720 and the structure pair of the solid-state image pickup apparatus 500 according to fourth embodiment
Should, but the setting of nonproliferation film 231 is changed.The architectural feature that is equal with fourth embodiment will not described below.
In the solid-state image pickup apparatus 700 shown in Figure 11 (a), nonproliferation film 231 is arranged on first substrate 204
Between second substrate 208, and as the layer being contained in the Miltilayer wiring structure 207 on the top for being arranged on first substrate 104
Between dielectric film.By means of this structure, the step of forming interlayer dielectric can be omitted, and realize solid-state image pickup apparatus
Slimming.In addition, solid-state image pickup apparatus 700 is the solid-state image pickup apparatus of rear surface irradiation type.Therefore, even if by for example
The nonproliferation film 231 that silicon nitride is formed is arranged on the whole top surface of photo-electric conversion element, need not also consider to be derived from diffusion
Prevent the reflection of film 231 and the incident light as the refringence between the silicon oxide film of in general interlayer dielectric.Accordingly, it is capable to
Enough diffusions for suppressing the refractory metal from second substrate 208.
In the solid-state image pickup apparatus 710 shown in Figure 11 (b), nonproliferation film 231 is arranged on first substrate 204
Between second substrate 208, and contact the top of the first wiring layer 222 of first substrate 208.First wiring layer 222 is by copper
Line is formed.Nonproliferation film 231 also serves as the nonproliferation film for the diffusion for preventing copper.By means of this structure, shape can be omitted
Into the diffusion for preventing copper nonproliferation film the step of, and realize the slimming of solid-state image pickup apparatus.Nonproliferation film 231
The structure of nonproliferation film as the diffusion for preventing copper is not limited to the structure shown in Figure 11 (b).For example, as shown in Figure 11 (c),
In some of Miltilayer wiring structure 207 on the top of first substrate 204 is arranged on, the second wiring layer 223 can be by copper
Line is formed, also, nonproliferation film 231 may be disposed at the top of the second wiring layer 223.Here, nonproliferation film 231 can quilt
It is arranged on the top of the first wiring layer 222., can be according to the upper of the first wiring layer 222 in order to reduce the electric capacity between wiring layer
The form of wiring at portion performs the composition of the nonproliferation film for the diffusion for preventing copper, and removes one part.Such as Figure 11 (c) institutes
Show, the Miltilayer wiring structure 211 being arranged on the top of second substrate 208 can be formed by copper cash, and can be included copper and be spread
Prevent film 901.
7th embodiment
In embodiment, it is described in detail and figure is applied to as image pick-up device according to the photoelectric conversion device of the present invention
As the situation of picking up system.Image picking system can be, for example, digital still life camera or digital camera.Show in fig. 13
Go out the block diagram of the situation of the digital still life camera application photoelectric conversion device to the example as image picking system.
In fig. 13, reference 1 represents the baffle plate for protecting lens, and reference 2 represents to pick up in image in this place
The lens for the optical imagery that irradiated body is formed on device 4 are taken, reference 3 represents the amount for changing the light through lens 2
Aperture diaphragm.Reference 4 be denoted as in the above-described embodiment any one described in solid-state image pickup apparatus
Image pick-up device.The optical imagery formed by lens 2 is converted into view data by image pick-up device 4.Here, AD conversion
Device is arranged at image pick-up device 4.Specifically, a/d converter is formed at the second chip.Reference 7 represent for
The image pickup data exported from image pick-up device 4 performs the signal processing part of various corrections and data compression.In addition, scheming
In 13, reference 8 represents to export the timing generating unit of various timing signals to image pick-up device 4 and signal processing part 7, attached
Icon note 9 represents to perform various computings and controls overall control/operational part of whole digital still life camera.The table of reference 10
Show the memory portion of temporary transient storage image data, reference 11 is represented to be used for perform record operation on the recording medium or read
The interface portion of operation, reference 12 represent such as to go for recording or reading the semiconductor memory of image pickup data
The recording medium removed.In addition, reference 13 is represented for performing the interface portion to communicate with such as outer computer.Here, example
Such as, timing signal can be transfused to outside image picking system, also, image picking system can comprise at least image pick-up device
4 signal processing part 7 with processing from the image pickup signal of image pick-up device output.Although use is in image in embodiment
Pick device 4 sets the situation of a/d converter, however, it is possible to set image pick-up device and AD conversion at different chips
Device.In addition, signal processing part 7 etc. may be disposed at image pick-up device 4.Due at the second chip of image pick-up device 4
High melting point metal compound layer is formed, therefore, signal transacting etc. can be performed at a high speed.Therefore, according to the opto-electronic conversion of the present invention
Device is applied to image picking system., can be with by the way that image pick-up device will be applied to according to the photoelectric conversion device of the present invention
Perform high-speed capture.
As described above, make it possible to provide the solid-state of executable high speed operation according to the solid-state image pickup apparatus of the present invention
Image pick-up device.Also, nonproliferation film makes it possible to reduce dark current, and suppresses the generation of the White Defects in image.
Embodiment is not limited to the structure of description, also, embodiment can be combined as needed.For example, solid-state image pickup apparatus can wrap
Include the multiple nonproliferation films for the diffusion for preventing refractory metal.
, can also be in the semiconductor to such as trap contact in addition to the source region, drain region and gate electrode of transistor
The part that region applies potential forms high melting point metal compound layer.
Industrial usability
What the present invention used suitable for the image picking system in such as digital still life camera or digital camera consolidates
State image pick-up device.
101 first chips
102 second chips
103 composition surfaces
104 first substrates
107 Miltilayer wiring structures
108 second substrates
111 Miltilayer wiring structures
112 photo-electric conversion elements
124 traps
125 regions and source/drains
The gate electrode of 126 amplifying transistors
130 high melting point metal compound layers
Claims (20)
1. a kind of manufacture method of solid-state image pickup apparatus, methods described include：
Prepare the first component for including the first semiconductor substrate and the first wire structures, the first semiconductor substrate is equipped with photoelectricity
Conversion element and the first transistor, the first wire structures are arranged on the first semiconductor substrate；
Prepare the second component for including the second semiconductor substrate and the second wire structures, the second semiconductor substrate is equipped with second
Transistor, the second wire structures are arranged on the second semiconductor substrate, and the interlayer dielectric of second wire structures is by cloth
Put on second semiconductor substrate, and high melting point metal compound layer is formed on the second transistor；And
First component and second component are engaged,
Wherein, the interlayer dielectric of the first wire structures is formed on the first semiconductor substrate, without on the first transistor
High melting point metal compound layer is formed, and
Wherein, at least one film being equipped with containing silicon nitride or carborundum in first component and second component, and
It is semiconductor-based that first component and second component are engaged so that the film containing silicon nitride or carborundum is placed in first
Between plate and the second semiconductor substrate.
2. according to the method for claim 1, wherein, the metal included in the high melting point metal compound layer is deposited over
On second transistor, and heat treatment is hereafter performed to be consequently formed the high melting point metal compound layer.
3. according to the method for claim 1, wherein, the interlayer that the first wire structures are formed on the first semiconductor substrate is exhausted
After velum, the contact site between formation the first transistor and the first wire structures.
4. according to the method for claim 3, wherein, the contact site is by the semiconductor regions of the first transistor
Perform ion implanting and heat treatment and formed.
5. according to the method for claim 1, wherein, multiple wirings are formed on the interlayer dielectric of the first wire structures
Layer, and multiple wiring layers are formed on the interlayer dielectric of the second wire structures.
6. according to the method for claim 1,
Wherein, the solid-state image pickup apparatus includes transfer transistor and amplifying transistor, the source electrode of the transfer transistor
It is connected with the photo-electric conversion element, and the drain electrode of the gate electrode of the amplifying transistor and the transfer transistor is electrically connected
Connect,
Wherein, the first transistor is the transfer transistor, also, the amplifying transistor is arranged on described the first half
On conductor substrate, and
Wherein, in the case where forming high melting point metal compound layer not on the amplifying transistor, in the first semiconductor
The interlayer dielectric of first wire structures is formed on substrate.
7. according to the method for claim 4,
Wherein, the solid-state image pickup apparatus includes transfer transistor, and the source electrode of the transfer transistor turns with the photoelectricity
Element connection is changed, and the drain electrode of the transfer transistor is used as floating diffusion region,
Wherein, the first transistor is the transfer transistor, and
Wherein, the semiconductor regions are comprised in the floating diffusion region.
8. a kind of manufacture method of solid-state image pickup apparatus, methods described include：
First component is prepared, first component includes the first semiconductor substrate and the first wire structures, and the first semiconductor substrate is set
Photo-electric conversion element and the first transistor are equipped with, the first wire structures are arranged on the first semiconductor substrate；
Second component is prepared, second component includes the second semiconductor substrate and the second wire structures, and the second semiconductor substrate is set
Second transistor is equipped with, the second wire structures are arranged on the second semiconductor substrate；And
First component and second component are engaged,
Wherein, the first wire structures include multiple wiring layers and be arranged on the plurality of wiring layer and the first semiconductor substrate it
Between interlayer dielectric,
Wherein, second transistor is included in the high-melting-point between the interlayer dielectric of the second wire structures and the second semiconductor substrate
Metal compound layer,
Wherein, the first transistor is not included in the Gao Rong between the interlayer dielectric of the first wire structures and the first semiconductor substrate
Point metal compound layer,
Wherein, the second wire structures include multiple wiring layers and be arranged on the plurality of wiring layer and the second semiconductor substrate it
Between interlayer dielectric.
9. according to the method for claim 8, wherein, when engaging first component and second component, it will be arranged at
The metal included in the high melting point metal compound layer that is directed at one of first component and second component place contains silicon nitride
Or the film of carborundum is placed between the first semiconductor substrate and the second semiconductor substrate.
10. according to the method for claim 9, wherein, the film containing silicon nitride or carborundum is arranged on second
At part.
11. the method according to claim 11, wherein, at least one bag in the first wire structures and the second wire structures
Include wiring layer and nonproliferation film, the wiring layer has a copper cash, the nonproliferation film be for copper and be arranged to
Wiring layer contact with copper cash.
12. according to the method any one of claim 1-11, wherein, the metal is cobalt.
13. a kind of manufacture method of solid-state image pickup apparatus, the solid-state image pickup apparatus include photo-electric conversion element and
For exporting the circuit of the signal based on the electric charge generated at the photo-electric conversion element, methods described includes：
The step of preparing first component, first component include the first semiconductor substrate and the first wire structures, and first is semiconductor-based
Plate is equipped with the photo-electric conversion element and the first transistor included in the circuit, and the first wire structures are arranged on
On first semiconductor substrate；
The step of preparing second component, second component include the second semiconductor substrate and the second wire structures, and second is semiconductor-based
Plate is equipped with the second transistor included in the circuit, and the second wire structures are arranged on the second semiconductor substrate；
And
The step of engaging first component and second component,
Wherein, second component includes cobalt suicide layer, and
Wherein, first component does not include cobalt suicide layer.
14. the method according to claim 11, wherein, in the step of engaging first component and second component, in photoelectricity
Between conversion element and the cobalt suicide layer set be arranged at one of first component and second component place containing nitridation
The film of silicon or carborundum.
15. according to the method any one of claim 1-5 and 8-14, wherein, a/d converter is set on second component.
16. according to the method any one of claim 1-5 and 8-14,
Wherein, the solid-state image pickup apparatus includes transfer transistor and amplifying transistor, the source electrode of the transfer transistor
It is connected with the photo-electric conversion element, and the drain electrode of the gate electrode of the amplifying transistor and the transfer transistor is electrically connected
Connect,
Wherein, the first transistor is the transfer transistor, and
Wherein, the amplifying transistor is arranged on first semiconductor substrate.
17. according to the method any one of claim 1-5 and 8-14, wherein, the second transistor is comprised in letter
In number process circuit or control circuit.
18. according to the method any one of claim 1-5 and 8-14,
Wherein, the solid-state image pickup apparatus includes transfer transistor and amplifying transistor, the source electrode of the transfer transistor
It is connected with the photo-electric conversion element, and the drain electrode of the gate electrode of the amplifying transistor and the transfer transistor is electrically connected
Connect,
Wherein, the first transistor is the transfer transistor, and
Wherein, the second transistor is the amplifying transistor.
19. according to the method any one of claim 1-5 and 8-14, wherein, first component and second component are by with such as
Under type engages：The interarea for being provided with the first transistor of first semiconductor substrate and the second semiconductor substrate are provided with
The interarea of two-transistor faces each other.
20. according to the method any one of claim 1-5 and 8-14, wherein, first component and second component are by with such as
Under type engages：The interarea for being provided with the first transistor of first semiconductor substrate and the second semiconductor substrate are provided with
The opposing face of the interarea of two-transistor faces each other.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510540844.XA CN105185801B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup device and image pickup system |
| CN201510301075.8A CN105023930B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup apparatus and image picking system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510301075.8A CN105023930B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup apparatus and image picking system |
| CN200980163052.8A CN102668081B (en) | 2009-12-26 | 2009-12-26 | Solid-state image pickup apparatus and image picking system |
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| JP3624140B2 (en) * | 1999-08-05 | 2005-03-02 | キヤノン株式会社 | Photoelectric conversion device and method for manufacturing the same, digital still camera or digital video camera |
| KR100508086B1 (en) * | 2002-09-11 | 2005-08-17 | 삼성전자주식회사 | Cmos image sensor and method of fabricating the same |
| KR100610481B1 (en) * | 2004-12-30 | 2006-08-08 | 매그나칩 반도체 유한회사 | Image sensor with enlarged photo detecting area and method for fabrication thereof |
| CN101060082A (en) * | 2006-04-20 | 2007-10-24 | 联华电子股份有限公司 | Semiconductor structure and its manufacture method |
| US7504336B2 (en) * | 2006-05-19 | 2009-03-17 | International Business Machines Corporation | Methods for forming CMOS devices with intrinsically stressed metal silicide layers |
| CN100524663C (en) * | 2006-07-24 | 2009-08-05 | 联华电子股份有限公司 | MOSFET and manufacturing method thereof |
| JP2010530633A (en) * | 2007-06-19 | 2010-09-09 | シリコンファイル・テクノロジーズ・インコーポレイテッド | Pixel array for preventing crosstalk between unit pixels and image sensor using the pixel |
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| CN105185801A (en) | 2015-12-23 |
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