CN105177516A - Electronic device shell with surface covered with TiN-nanometer TiO<2> film and processing method for electronic device shell - Google Patents
Electronic device shell with surface covered with TiN-nanometer TiO<2> film and processing method for electronic device shell Download PDFInfo
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- CN105177516A CN105177516A CN201510369913.5A CN201510369913A CN105177516A CN 105177516 A CN105177516 A CN 105177516A CN 201510369913 A CN201510369913 A CN 201510369913A CN 105177516 A CN105177516 A CN 105177516A
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- 238000003672 processing method Methods 0.000 title abstract 2
- 239000000919 ceramic Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 33
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011159 matrix material Substances 0.000 claims description 72
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 60
- 239000007789 gas Substances 0.000 claims description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 34
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 34
- 229910052786 argon Inorganic materials 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 27
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 20
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 17
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 239000001301 oxygen Substances 0.000 claims description 17
- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 239000003643 water by type Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 12
- 230000003670 easy-to-clean Effects 0.000 abstract description 7
- 238000004140 cleaning Methods 0.000 abstract description 6
- 238000001755 magnetron sputter deposition Methods 0.000 abstract description 6
- 239000000428 dust Substances 0.000 abstract description 5
- 238000009825 accumulation Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 abstract 1
- 238000005457 optimization Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 4
- 239000004408 titanium dioxide Substances 0.000 description 4
- 241000894006 Bacteria Species 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 210000004243 sweat Anatomy 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K5/00—Casings, cabinets or drawers for electric apparatus
- H05K5/02—Details
Abstract
The invention discloses an electronic device shell with the surface covered with a TiN-nanometer TiO<2> film and a processing method for the electronic device shell. A ceramic substrate (101) is firstly coated with a TiN film precoated layer (102) by adjusting process parameters by means of magnetron sputtering, and then the TiN film precoated layer (102) is firstly coated with a nanometer TiO<2> film (103), and the film is even. The problems of dust accumulation and contamination of an electronic device shell are solved, so that the electronic device shell has the characters of being easy to clean and achieving self cleaning, and product competitiveness is improved. In addition, in the processing process, the utilization rate of targets is high, and safety and environment friendliness are achieved.
Description
Technical field
The present invention relates to field of electronic devices, specifically refer to surface coverage TiN-nano-TiO
2the case of electronic device of film and working method thereof.
Background technology
The housing of existing electronic product is coated with avoids the metal level of signal disturbing to obtain good manipulation strength and texture, but metal level does not possess cleaning function, and surface easily accumulates dust, sweat stain etc., affects the use of electronic product.
Titanium dioxide film has good photocatalysis, and partial organic substances can be made under uviolizing to decompose, and has certain automatically cleaning ability.
Magnetron sputtering deposition refers to have enough high-octane particle bombardment target material surface, the atom in target is made to obtain enough energy by collision, thus from surface emitting out, the direction of motion of high energy particle is changed again by applying magnetic field, and the movement locus of constraint and prolongation particle, and then improve particle to the ionization efficiency of working gas and sputtering sedimentation rate.Magnetron sputtering technique has become one of topmost technology in the production of industrial plated film now, and be particularly suitable for the production of large-area coating film, its most outstanding advantage is that the sticking power of film and matrix is stronger; Also there is the advantages such as rate of film build is high, good uniformity; In addition, all the other harmful exhausts, waste liquid is not produced in whole coating process, environmental protection.
Summary of the invention
The object of the present invention is to provide surface coverage TiN-nano-TiO
2the case of electronic device of film and working method thereof, the problem of effectively solve the easy dust stratification of electronic device housing, getting dirty, provide a kind of be convenient to clean electronic device housing and working method.
Surface coverage TiN-nano-TiO
2the case of electronic device of film, comprises matrix, covers the nano-TiO of outer surface of matrix
2film be connected matrix and nano-TiO
2the initialization layer of film; Described nano-TiO
2film is the mixed crystal lattice structure of Rutile Type crystalline network or Anatase crystalline network or Rutile Type and Anatase, and its thickness is 20-80nm; Described matrix is ceramic matrix, and initialization layer is TiN initialization layer.
Surface coverage TiN-nano-TiO provided by the invention
2the case of electronic device of film, does not disturb electronic signal, and has easy to clean and self-cleaning characteristic.Nano-TiO
2film not only can make housing present metal appearance, also under the irradiation of visible ray or UV-light, point can take off adhere to surface of shell dust, sweat stain or residual organic contaminants etc., thus play the effect of clean protection to surface of shell.On the other hand, due to nano-TiO
2film has stronger wetting ability, and when there being current to flow through surface of shell, current also can be taken away on housing by nano-TiO automatically
2pollutent residual after film decomposes.So, user, while enjoyment electronic installation high-quality outward appearance, can keep again the clean of surface of shell the moment, reduce growing or propagating of bacterium, ensure HUMAN HEALTH, improve product competitiveness.
Described TiN initialization layer can strengthen ceramic matrix and nano-TiO
2conjugation between film, can isolate ceramic matrix and nano-TiO again
2film, prevents ceramic matrix by nano-TiO
2film oxygenolysis.
Described nano-TiO
2the thickness of film is 20-80nm, in this thickness range, and nano-TiO
2film can not produce interference to the transmitting-receiving of electronic signal.
Surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix;
Step S200: be firmly placed on the pallet of magnetron sputter by surface treated ceramic matrix, is delivered to the vacuum chamber being provided with metal titanium targets by matrix by transmitting device;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of substrate temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
Present method realizes by magnetron sputtering the object preparing nano-titanium dioxide film on ceramic matrix, by TiN film initialization layer, strengthens the bonding force of titanium dioxide film and ceramic matrix.Present method can the overall thickness of equal control at below 100nm, can ensure effectively to control the performance that electronic device housing is easy to clean product thickness and to be applicable to microminiaturization again.
Further, described step S100 specifically refers to following flow process:
Step S110: waters ceramic matrix being put into water temperature 60-80 DEG C leaves standstill 1-2h;
Step S120: rinse bath ceramic matrix being put into configuration 20-50% acetone soln, adopts ultrasonic cleaning 10-20min;
Step S130: with the deionized water rinsing ceramic matrix of flowing, remove acetone soln;
Step S140: take out ceramic matrix and with cold wind, its surface dried up, stand-by.
Further, described step S200 specifically refers to that operator wear dustless gloves or use clean pickup device to be placed in pallet by surface treated ceramic matrix, and the transmitting device configured by magnetron sputter is transported to specified location.
Further, described step S300 specifically refers to and is first evacuated to 1-2Pa with mechanical pump, is then evacuated to 3.8x10 with molecular pump
-4-4.2x10
-4pa, the dividing potential drop of argon gas is 0.4-1.6Pa, and the dividing potential drop of nitrogen is 0.02-0.02Pa.
Further, described step S400 specifically refers at power 115W, and bias voltage 140V, range 35mm sputter under the processing condition that substrate temperature is 200 DEG C, controls sputtering time 40min.
Further, described step S500 specifically refers to and is again evacuated to 1Pa with mechanical pump, is then evacuated to 5.8x10 with molecular pump
-4-6.2x10
-4pa, the dividing potential drop of argon gas is 0.4-2.8Pa, and the dividing potential drop of oxygen is 0.01-0.025Pa.
Further, described step S600 specifically refers at power 3500W, sputters under the processing condition of bias voltage 0V, range 35mm, controls sputtering time 40-160min.
Further, described argon gas is as sputter gas, and its purity is greater than 99.999%; Described nitrogen is as reaction gas, and its purity is greater than 99.99%; Described oxygen is as reaction gas, and its purity is greater than 99.9%.
Further, the purity of described metal titanium targets is greater than 99.96%.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the invention provides a kind of surface coverage TiN-nano-TiO
2the case of electronic device of film and working method thereof, case of electronic device is made to have easy to clean and self-cleaning characteristic, user is while enjoyment electronic installation high-quality outward appearance, the clean of surface of shell can be kept again the moment, reduce growing or propagating of bacterium, ensure HUMAN HEALTH, improve product competitiveness.
(2) in the course of processing, target material utilization ratio is high, safety and environmental protection.
Accompanying drawing explanation
Fig. 1 is surface coverage TiN-nano-TiO
2the work flow schematic diagram of the case of electronic device of film.
Fig. 2 is surface coverage TiN-nano-TiO
2the structural representation of the case of electronic device of film.
Wherein: 101-ceramic matrix, 102-TiN initialization layer, 103-nano-TiO
2film.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment 1:
Surface coverage TiN-nano-TiO
2the case of electronic device of film, as shown in Figure 2, comprises matrix, covers the nano-TiO of outer surface of matrix
2film 103 be connected matrix and nano-TiO
2the initialization layer of film 103; Described nano-TiO
2film 103 is the mixed crystal lattice structure of Rutile Type crystalline network or Anatase crystalline network or Rutile Type and Anatase, and its thickness is 20-80nm; Described matrix is ceramic matrix 101, and initialization layer is TiN initialization layer 102.
Surface coverage TiN-nano-TiO provided by the invention
2the case of electronic device of film, does not disturb electronic signal, and has easy to clean and self-cleaning characteristic.Nano-TiO
2film 103 not only can make housing present metal appearance, also under the irradiation of visible ray or UV-light, point can take off adhere to surface of shell dust, sweat stain or residual organic contaminants etc., thus play the effect of clean protection to surface of shell.On the other hand, due to nano-TiO
2film 103 has stronger wetting ability, and when there being current to flow through surface of shell, current also can be taken away on housing by nano-TiO automatically
2pollutent residual after film 103 decomposes.So, user, while enjoyment electronic installation high-quality outward appearance, can keep again the clean of surface of shell the moment, reduce growing or propagating of bacterium, ensure HUMAN HEALTH, improve product competitiveness.
Described TiN initialization layer 102 can strengthen ceramic matrix 101 and nano-TiO
2conjugation between film 103, can isolate ceramic matrix 101 and nano-TiO again
2film 103, prevents ceramic matrix 101 by nano-TiO
2film 103 oxygenolysis.
Described nano-TiO
2the thickness of film 103 is 20-80nm, in this thickness range, and nano-TiO
2film 103 can not produce interference to the transmitting-receiving of electronic signal.
Embodiment 2:
Surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, as shown in Figure 1, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix 101;
Step S200: surface treated ceramic matrix 101 is firmly placed on the pallet of magnetron sputter, by transmitting device, matrix is delivered to the vacuum chamber being provided with metal titanium targets;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of substrate temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
Present method realizes by magnetron sputtering the object preparing nano-titanium dioxide film on ceramic matrix 101, by TiN film initialization layer, strengthens the bonding force of titanium dioxide film and ceramic matrix 101.Present method can the overall thickness of equal control at below 100nm, can ensure effectively to control the performance that electronic device housing is easy to clean product thickness and to be applicable to microminiaturization again.
Embodiment 3:
The present embodiment does further optimization on the basis of embodiment 2, and further, described step S100 specifically refers to following flow process:
Step S110: waters ceramic matrix 101 being put into water temperature 60-80 DEG C leaves standstill 1-2h;
Step S120: rinse bath ceramic matrix 101 being put into configuration 20-50% acetone soln, adopts ultrasonic cleaning 10-20min;
Step S130: with the deionized water rinsing ceramic matrix 101 of flowing, remove acetone soln;
Step S140: take out ceramic matrix 101 and with cold wind, its surface dried up, stand-by.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 4:
The present embodiment does further optimization on the basis of embodiment 2, further, described step S200 specifically refers to that operator wear dustless gloves or use clean pickup device to be placed in pallet by surface treated ceramic matrix 101, and the transmitting device configured by magnetron sputter is transported to specified location.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 5:
The present embodiment does further optimization on the basis of embodiment 2, and further, described step S300 specifically refers to and is first evacuated to 1-2Pa with mechanical pump, is then evacuated to 3.8x10 with molecular pump
-4-4.2x10
-4pa, the dividing potential drop of argon gas is 0.4-1.6Pa, and the dividing potential drop of nitrogen is 0.02-0.02Pa.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 6:
The present embodiment does further optimization on the basis of embodiment 2, and further, described step S400 specifically refers at power 115W, and bias voltage 140V, range 35mm sputter under the processing condition that substrate temperature is 200 DEG C, controls sputtering time 40min.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 7:
The present embodiment does further optimization on the basis of embodiment 2, and further, described step S500 specifically refers to and is again evacuated to 1Pa with mechanical pump, is then evacuated to 5.8x10 with molecular pump
-4-6.2x10
-4pa, the dividing potential drop of argon gas is 0.4-2.8Pa, and the dividing potential drop of oxygen is 0.01-0.025Pa.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 8:
The present embodiment does further optimization on the basis of embodiment 2, and further, described step S600 specifically refers at power 3500W, sputters under the processing condition of bias voltage 0V, range 35mm, controls sputtering time 40-160min.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 9:
The present embodiment does further optimization on the basis of embodiment 2, and further, described argon gas is as sputter gas, and its purity is greater than 99.999%; Described nitrogen is as reaction gas, and its purity is greater than 99.99%; Described oxygen is as reaction gas, and its purity is greater than 99.9%; The purity of described metal titanium targets is greater than 99.96%.Other parts of the present embodiment are identical with embodiment 2, therefore repeat no more.
Embodiment 10:
Surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix 101;
Step S200: surface treated ceramic matrix 101 is firmly placed on the pallet of magnetron sputter, by transmitting device, matrix is delivered to the vacuum chamber being provided with metal titanium targets;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of substrate temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
Further, described step S300 specifically refers to and is first evacuated to 1-2Pa with mechanical pump, is then evacuated to 3.8x10 with molecular pump
-4-4.2x10
-4pa, the dividing potential drop of argon gas is 0.4-1.6Pa, and the dividing potential drop of nitrogen is 0.02-0.02Pa.
Further, described step S400 specifically refers at power 115W, and bias voltage 140V, range 35mm sputter under the processing condition that substrate temperature is 200 DEG C, controls sputtering time 40min.
Embodiment 11:
Surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix 101;
Step S200: surface treated ceramic matrix 101 is firmly placed on the pallet of magnetron sputter, by transmitting device, matrix is delivered to the vacuum chamber being provided with metal titanium targets;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of substrate temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
Further, described step S500 specifically refers to and is again evacuated to 1Pa with mechanical pump, is then evacuated to 5.8x10 with molecular pump
-4-6.2x10
-4pa, the dividing potential drop of argon gas is 0.4-2.8Pa, and the dividing potential drop of oxygen is 0.01-0.025Pa.
Further, described step S600 specifically refers at power 3500W, sputters under the processing condition of bias voltage 0V, range 35mm, controls sputtering time 40-160min.
Embodiment 12:
Surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix 101;
Step S200: surface treated ceramic matrix 101 is firmly placed on the pallet of magnetron sputter, by transmitting device, matrix is delivered to the vacuum chamber being provided with metal titanium targets;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of substrate temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
Further, described step S300 specifically refers to and is first evacuated to 1-2Pa with mechanical pump, is then evacuated to 3.8x10 with molecular pump
-4-4.2x10
-4pa, the dividing potential drop of argon gas is 0.4-1.6Pa, and the dividing potential drop of nitrogen is 0.02-0.02Pa.
Further, described step S400 specifically refers at power 115W, and bias voltage 140V, range 35mm sputter under the processing condition that substrate temperature is 200 DEG C, controls sputtering time 40min.
Further, described step S500 specifically refers to and is again evacuated to 1Pa with mechanical pump, is then evacuated to 5.8x10 with molecular pump
-4-6.2x10
-4pa, the dividing potential drop of argon gas is 0.4-2.8Pa, and the dividing potential drop of oxygen is 0.01-0.025Pa.
Further, described step S600 specifically refers at power 3500W, sputters under the processing condition of bias voltage 0V, range 35mm, controls sputtering time 40-160min.
Embodiment 13:
Surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix 101;
Step S200: surface treated ceramic matrix 101 is firmly placed on the pallet of magnetron sputter, by transmitting device, matrix is delivered to the vacuum chamber being provided with metal titanium targets;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of substrate temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
Present method realizes by magnetron sputtering the object preparing nano-titanium dioxide film on ceramic matrix 101, by TiN film as initialization layer, strengthens the bonding force of titanium dioxide film and ceramic matrix 101.Present method can the overall thickness of equal control at below 100nm, can ensure effectively to control the performance that electronic device housing is easy to clean product thickness and to be applicable to microminiaturization again.
Further, described step S100 specifically refers to following flow process:
Step S110: waters ceramic matrix 101 being put into water temperature 60-80 DEG C leaves standstill 1-2h;
Step S120: rinse bath ceramic matrix 101 being put into configuration 20-50% acetone soln, adopts ultrasonic cleaning 10-20min;
Step S130: with the deionized water rinsing ceramic matrix 101 of flowing, remove acetone soln;
Step S140: take out ceramic matrix 101 and with cold wind, its surface dried up, stand-by.
Further, described step S200 specifically refers to that operator wear dustless gloves or use clean pickup device to be placed in pallet by surface treated ceramic matrix 101, and the transmitting device configured by magnetron sputter is transported to specified location.
Further, described step S300 specifically refers to and is first evacuated to 1-2Pa with mechanical pump, is then evacuated to 3.8x10 with molecular pump
-4-4.2x10
-4pa, the dividing potential drop of argon gas is 0.4-1.6Pa, and the dividing potential drop of nitrogen is 0.02-0.02Pa.
Further, described step S400 specifically refers at power 115W, and bias voltage 140V, range 35mm sputter under the processing condition that substrate temperature is 200 DEG C, controls sputtering time 40min.
Further, described step S500 specifically refers to and is again evacuated to 1Pa with mechanical pump, is then evacuated to 5.8x10 with molecular pump
-4-6.2x10
-4pa, the dividing potential drop of argon gas is 0.4-2.8Pa, and the dividing potential drop of oxygen is 0.01-0.025Pa.
Further, described step S600 specifically refers at power 3500W, sputters under the processing condition of bias voltage 0V, range 35mm, controls sputtering time 40-160min.
Further, described argon gas is as sputter gas, and its purity is greater than 99.999%; Described nitrogen is as reaction gas, and its purity is greater than 99.99%; Described oxygen is as reaction gas, and its purity is greater than 99.9%.
The above is only preferred embodiment of the present invention, and not do any pro forma restriction to the present invention, every any simple modification, equivalent variations done above embodiment according to technical spirit of the present invention, all falls within protection scope of the present invention.
Claims (10)
1. surface coverage TiN-nano-TiO
2the case of electronic device of film, is characterized in that: comprise matrix, cover the nano-TiO of outer surface of matrix
2film (103) be connected matrix and nano-TiO
2the initialization layer of film (103); Described nano-TiO
2the mixed crystal lattice structure that film (103) is Rutile Type crystalline network or Anatase crystalline network or Rutile Type and Anatase, its thickness is 20-80nm; Described matrix is ceramic matrix (101), and initialization layer is TiN initialization layer (102).
2. surface coverage TiN-nano-TiO
2the working method of the case of electronic device of film, is characterized in that, comprises the following steps:
Step S100: surface treatment is carried out to ceramic matrix (101);
Step S200: be firmly placed on the pallet of magnetron sputter by surface treated ceramic matrix (101), is delivered to ceramic matrix (101) vacuum chamber being provided with metal titanium targets by transmitting device;
Step S300: the gangway closing vacuum chamber, is evacuated to 3x10
-4-5x10
-4pa, passes into the mixed gas of argon gas and nitrogen;
Step S400: be 50-200W at power, bias voltage 120-160V, range 30-40mm, sputter under the processing condition of ceramic matrix (101) temperature 30-300 DEG C, and control sputtering time is 20-60min;
Step S500: slowly open vacuum chamber and make it be communicated with outside air, more again extracting vacuum degree to 5x10
-4-8x10
-4pa, passes into the mixed gas of argon gas and oxygen;
Step S600: be 3000-4000W at power, no-bias, sputters under the processing condition of range 30-40mm, and control sputtering time is 40-400min.
3. surface coverage TiN-nano-TiO according to claim 2
2the working method of the case of electronic device of film, is characterized in that: described step S100 specifically refers to following flow process:
Step S110: waters ceramic matrix (101) being put into water temperature 60-80 DEG C leaves standstill 1-2h;
Step S120: rinse bath ceramic matrix (101) being put into configuration 20-50% acetone soln, adopts ultrasonic cleaning 10-20min;
Step S130: with the deionized water rinsing ceramic matrix (101) of flowing, remove acetone soln;
Step S140: take out ceramic matrix (101) and with cold wind, its surface dried up, stand-by.
4. surface coverage TiN-nano-TiO according to claim 2
2the working method of the case of electronic device of film, it is characterized in that: described step S200 specifically refers to that operator wear dustless gloves or use clean pickup device to be placed in pallet by surface treated ceramic matrix (101), and the transmitting device configured by magnetron sputter is transported to specified location.
5. surface coverage TiN-nano-TiO according to claim 2
2the working method of the case of electronic device of film, is characterized in that: described step S300 specifically refers to and is first evacuated to 1-2Pa with mechanical pump, is then evacuated to 3.8x10 with molecular pump
-4-4.2x10
-4pa, the dividing potential drop of argon gas is 0.4-1.6Pa, and the dividing potential drop of nitrogen is 0.02-0.02Pa.
6. surface coverage TiN-nano-TiO according to claim 5
2the working method of the case of electronic device of film, is characterized in that: described step S400 specifically refers at power 115W, bias voltage 140V, range 35mm, sputters under the processing condition of ceramic matrix (101) temperature 200 DEG C, controls sputtering time 40min.
7. surface coverage TiN-nano-TiO according to claim 2
2the working method of the case of electronic device of film, is characterized in that: described step S500 specifically refers to and is again evacuated to 1Pa with mechanical pump, is then evacuated to 5.8x10 with molecular pump
-4-6.2x10
-4pa, the dividing potential drop of argon gas is 0.4-2.8Pa, and the dividing potential drop of oxygen is 0.01-0.025Pa.
8. surface coverage TiN-nano-TiO according to claim 7
2the working method of the case of electronic device of film, is characterized in that: described step S600 specifically refers at power 3500W, sputters under the processing condition of bias voltage 0V, range 35mm, controls sputtering time 40-160min.
9. surface coverage TiN-nano-TiO according to claim 2
2the working method of the case of electronic device of film, is characterized in that: described argon gas is as sputter gas, and its purity is greater than 99.999%; Described nitrogen is as reaction gas, and its purity is greater than 99.99%; Described oxygen is as reaction gas, and its purity is greater than 99.9%.
10. the surface coverage TiN-nano-TiO according to claim 2-9 any one
2the working method of the case of electronic device of film, is characterized in that: the purity of described metal titanium targets is greater than 99.96%.
Priority Applications (5)
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|---|---|---|---|
| CN201711028774.5A CN107815656A (en) | 2015-06-30 | 2015-06-30 | The method that titanium alloy coating is prepared using magnetron sputtering |
| CN201711028775.XA CN107794503A (en) | 2015-06-30 | 2015-06-30 | The manufacture method of surface of shell titanium dioxide coating nano coating |
| CN201510369913.5A CN105177516B (en) | 2015-06-30 | 2015-06-30 | Surface covers TiN nano-TiOs2The case of electronic device and its processing method of film |
| CN201711032288.0A CN107761066A (en) | 2015-06-30 | 2015-06-30 | Coat the manufacturing process of metal composite nano coating |
| CN201711032257.5A CN107779832A (en) | 2015-06-30 | 2015-06-30 | The process of magnetron sputtering titanium dioxide coating composite coating |
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| CN201711032288.0A Division CN107761066A (en) | 2015-06-30 | 2015-06-30 | Coat the manufacturing process of metal composite nano coating |
| CN201711032257.5A Division CN107779832A (en) | 2015-06-30 | 2015-06-30 | The process of magnetron sputtering titanium dioxide coating composite coating |
| CN201711028774.5A Division CN107815656A (en) | 2015-06-30 | 2015-06-30 | The method that titanium alloy coating is prepared using magnetron sputtering |
| CN201711028775.XA Division CN107794503A (en) | 2015-06-30 | 2015-06-30 | The manufacture method of surface of shell titanium dioxide coating nano coating |
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| CN201711028774.5A Pending CN107815656A (en) | 2015-06-30 | 2015-06-30 | The method that titanium alloy coating is prepared using magnetron sputtering |
| CN201711028775.XA Pending CN107794503A (en) | 2015-06-30 | 2015-06-30 | The manufacture method of surface of shell titanium dioxide coating nano coating |
| CN201510369913.5A Active CN105177516B (en) | 2015-06-30 | 2015-06-30 | Surface covers TiN nano-TiOs2The case of electronic device and its processing method of film |
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| CN105483697A (en) * | 2015-12-30 | 2016-04-13 | 温州神一微型轴有限公司 | Miniature shaft and preparation method thereof |
| CN116103612A (en) * | 2023-03-02 | 2023-05-12 | 江苏富乐华功率半导体研究院有限公司 | Method for manufacturing titanium nitride film |
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| CN107779832A (en) | 2018-03-09 |
| CN107761066A (en) | 2018-03-06 |
| CN107794503A (en) | 2018-03-13 |
| CN105177516B (en) | 2017-12-12 |
| CN107815656A (en) | 2018-03-20 |
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