CN105176103A - Thick film circuit insulating dielectric slurry for aluminum substrates, and preparation method thereof - Google Patents
Thick film circuit insulating dielectric slurry for aluminum substrates, and preparation method thereof Download PDFInfo
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- CN105176103A CN105176103A CN201510334158.7A CN201510334158A CN105176103A CN 105176103 A CN105176103 A CN 105176103A CN 201510334158 A CN201510334158 A CN 201510334158A CN 105176103 A CN105176103 A CN 105176103A
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- thick film
- film circuit
- insulating dielectric
- aluminum substrate
- dielectric slurry
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Abstract
The present invention discloses a thick film circuit insulating dielectric slurry for aluminum substrates, and a preparation method thereof. The preparation method comprises: uniformly mixing Ba3(PO4)2, AlPO4, Zn3(PO4)2, Sn2P2O7, Rb2O, B2O3 and Nb2O5 according to a certain ratio, placing into a high temperature electric furnace, heating to a temperature of 1000-1600 DEG C according to a certain temperature increase program, carrying out thermal insulation for 1-6 h, carrying out water quenching, carrying out ball milling on the material to achieve 1-5 [mu] mu to obtain aluminum substrate thick film circuit insulating dielectric composite glass-ceramic powder, mixing the glass-ceramic powder and an organic liquid carrier comprising terpineol, tributyl citrate, ethyl cellulose, span 85 and hydrogenated castor oil according to a certain ratio, and repeatedly rolling by using a three-roller rolling mill to obtain the metal aluminum substrate thick film circuit insulating dielectric slurry. The insulating dielectric slurry has characteristics of good bonding force with the metal aluminum substrate, high breakdown voltage resistance and good insulating property, and meets the requirements of the high-power metal aluminum substrate thick film circuit insulating dielectric material.
Description
Technical field
The present invention relates to thick film circuit technique field, specifically a kind of for high-power metallic aluminium base thick film circuit dielectric slurry and preparation method thereof.
Background technology
Thick film technology by the method for silk screen printing, the materials such as dielectric slurry, resistance slurry and conductor paste is coated with on substrate, through high temperature sintering, substrate forms the functional membrane of adhere well.At present, thick film technology is widely used as the use of large power, electrically thermoelectric converter in field of electric heating.As high power electrothermal device substrate, traditional stupalith more and more can not meet heat transfer and the heat radiation needs of components and parts, and the fragility of ceramic substrate is large, and machining property is poor, is unfavorable for that big area Yin Shua ﹑ cuts and installs.The good mechanical property that stainless steel substrate has, the advantage of shock resistance, be more and more applied to thick film large power, electrically thermoelectric converter.But stainless steel substrate temperature rise rate is slow, density causes greatly electrical heating element heavy, and thick film circuit element firing temperature is high, and metal aluminum substrate has lightweight, good heat conductivity, be easy to the advantages such as processing, be suitable as very much a kind of high power electrothermal thick film circuit substrate and use.But the thermal expansivity of metallic aluminium is large, do not mate with electric slurry conventional at present, and the fusing point of aluminium is lower, only has about 660 DEG C, can not use traditional high-sintering process when firing electrical heating element.Develop the high-power thick-film electrical heating element based on metal aluminum substrate, new demand is proposed to its electric slurry, especially the exploitation based on the dielectric slurry of metal aluminum substrate is imperative, as long as develop the serial dielectric slurry that can directly apply to metal aluminum substrate, just there is the possibility of application based on metal aluminum substrate large power thick film circuit.
The thick film circuit insulating dielectric materials being applied to metal aluminum substrate not only needs to mate with metal aluminum substrate on thermal expansivity, and will have the requirements such as good insulating property, voltage breakdown is high, leakage current is little.The composite microcrystallite glass adopting phosphoric acid salt and oxide compound to be formed, can obtain the coefficient of expansion matched with metal aluminum substrate, and sintering temperature is low, can adapts to the technical requirements of high-power metallic aluminium base thick film circuit.
Summary of the invention
The object of the present invention is to provide a kind of for aluminium base thick film circuit dielectric slurry and preparation method thereof, to solve the problem proposed in above-mentioned background technology.
For achieving the above object, the invention provides following technical scheme:
One is used for aluminium base thick film circuit dielectric slurry, is mixed by composite microcrystallite glass powder and organic liquid carrier,
Described composite microcrystallite glass powder is formed by the Material cladding of following mass percent: Ba
3(PO
4)
220 ~ 40%, AlPO
45 ~ 25%, Zn
3(PO
4)
22 ~ 10%, Sn
2p
2o
71 ~ 10%, Rb
2o20 ~ 40%, B
2o
310 ~ 30%, Nb
2o
50.5 ~ 5%;
Described organic liquid carrier is mixed by the organism of following mass ratio: Terpineol 350: tributyl citrate: ethyl cellulose: department class 85:1,4-butyrolactone: the mass ratio of hydrogenated castor oil is (50 ~ 80): (1 ~ 15): (1 ~ 6): (2 ~ 8): (2 ~ 8): (0.5 ~ 3).
For a preparation method for aluminium base thick film circuit dielectric slurry, concrete preparation method is as follows: by Ba
3(PO
4)
2, AlPO
4, Zn
3(PO
4)
2, Sn
2p
2o
7, Rb
2o, B
2o
3, Nb
2o
5mix in proportion, be placed in high-temperature electric resistance furnace and be heated to 1000 ~ 1600 DEG C by the temperature rise rate of 2 ~ 10 DEG C/min, then be incubated 1 ~ 6h to sinter, material after sintering is put into water and carries out shrend, the material of shrend is put into the powder that ball mill carries out being milled to 1 ~ 5 μm of particle diameter, obtain aluminium base thick film circuit dielectric composite microcrystallite glass powder, composite microcrystallite glass powder is pressed (70 ~ 80) with organic liquid carrier: the mass ratio of (20 ~ 30) mixes, use three-high mill repeat-rolling, obtain metal aluminum substrate thick film circuit dielectric slurry.
Compared with prior art, the invention has the beneficial effects as follows:
1, the composite microcrystallite glass adopting phosphoric acid salt and oxide compound to be formed, can obtain the thermal expansivity matched with metal aluminum substrate, obtain the large power thick film circuit insulating medium layer being applicable to aluminium base;
2, phosphoric acid salt forms firm network structure together with oxide compound, makes composite microcrystallite glass insulating dielectric materials have good hardness and snappiness, can adapt to the requirement of high-power metallic aluminium base thick film circuit work under bad environment;
3, boron oxide not only participates in forming devitrified glass, significantly can also reduce the smelting temperature of material;
4, this dielectric slurry and metal aluminum substrate bonding force good, have high breakdown voltage resistant, good insulating property, this preparation technology be simple to operate, be easy to control, be conducive to realizing large-scale industrial and produce.
Embodiment
Below in conjunction with the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
Accurately take 32gBa
3(PO
4)
2, 11gAlPO
4, 5gZn
3(PO
4)
2, 4gSn
2p
2o
7, 26gRb
2o, 20gB
2o
3, 2gNb
2o
5.
Organic liquid carrier composition is Terpineol 350, tributyl citrate, ethyl cellulose, class of department 85, GBL, hydrogenated castor oil, and mass ratio is 73:12:4:6:4:1.
Raw material is mixed by proportioning, be placed in high-temperature electric resistance furnace, 1350 DEG C are heated to the temperature rise rate of 5 DEG C/min, insulation 3h, then carry out shrend, solid is put into the corundum tank of planetary ball mill, then add deionized water as mix grinding medium, ball milling 4h, obtains particle diameter at the composite microcrystallite glass powder of 1 ~ 4 μm; Composite microcrystallite glass powder and organic liquid carrier are made slurry by the mass ratio of 75:25, uses three-high mill repeat-rolling.
On metal aluminum substrate, film forming is printed with silk screen, after 560 DEG C of sintering, media coating thickness is 112 μm, voltage breakdown (AC) >1500V, insulation resistance (500V) >10M Ω, leakage current (250V) <2mA.
Embodiment 2
Accurately take 25gBa
3(PO
4)
2, 15gAlPO
4, 4gZn
3(PO
4)
2, 8gSn
2p
2o
7, 30gRb
2o, 15gB
2o
3, 3gNb
2o
5.
Organic liquid carrier composition is Terpineol 350, tributyl citrate, ethyl cellulose, class of department 85, GBL, hydrogenated castor oil, and mass ratio is 75:10:5:5:3:2.
Raw material is mixed by proportioning, be placed in high-temperature electric resistance furnace, 1400 DEG C are heated to the temperature rise rate of 8 DEG C/min, insulation 2h, then carry out shrend, solid is put into the corundum tank of planetary ball mill, then add deionized water as mix grinding medium, ball milling 3h, obtains particle diameter at the composite microcrystallite glass powder of 2 ~ 5 μm; Composite microcrystallite glass powder and organic liquid carrier are made slurry by the mass ratio of 78:22, uses three-high mill repeat-rolling.
On metal aluminum substrate, film forming is printed with silk screen, after 560 DEG C of sintering, media coating thickness is 118 μm, voltage breakdown (AC) >1500V, insulation resistance (500V) >10M Ω, leakage current (250V) <2mA.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned one exemplary embodiment, and when not deviating from spirit of the present invention or essential characteristic, the present invention can be realized in other specific forms.Therefore, no matter from which point, all should embodiment be regarded as exemplary, and be nonrestrictive, scope of the present invention is limited by claims instead of above-mentioned explanation, and all changes be therefore intended in the implication of the equivalency by dropping on claim and scope are included in the present invention.
Claims (2)
1., for an aluminium base thick film circuit dielectric slurry, it is characterized in that, mixed by composite microcrystallite glass powder and organic liquid carrier,
Described composite microcrystallite glass powder is formed by the Material cladding of following mass percent: Ba3 (PO4) 220 ~ 40%, AlPO45 ~ 25%, Zn3 (PO4) 22 ~ 10%, Sn2P2O71 ~ 10%, Rb2O20 ~ 40%, B2O310 ~ 30%, Nb2O50.5 ~ 5%;
Described organic liquid carrier is mixed by the organism of following mass ratio: Terpineol 350: tributyl citrate: ethyl cellulose: department class 85:1,4-butyrolactone: the mass ratio of hydrogenated castor oil is (50 ~ 80): (1 ~ 15): (1 ~ 6): (2 ~ 8): (2 ~ 8): (0.5 ~ 3).
2. the preparation method for aluminium base thick film circuit dielectric slurry as claimed in claim 1, it is characterized in that, concrete preparation method is as follows: by Ba3 (PO4) 2, AlPO4, Zn3 (PO4) 2, Sn2P2O7, Rb2O, B2O3, Nb2O5 mixes in proportion, be placed in high-temperature electric resistance furnace and be heated to 1000 ~ 1600 DEG C by the temperature rise rate of 2 ~ 10 DEG C/min, then be incubated 1 ~ 6h to sinter, material after sintering is put into water and carries out shrend, the material of shrend is put into the powder that ball mill carries out being milled to 1 ~ 5 μm of particle diameter, obtain aluminium base thick film circuit dielectric composite microcrystallite glass powder, composite microcrystallite glass powder is pressed (70 ~ 80) with organic liquid carrier: the mass ratio of (20 ~ 30) mixes, use three-high mill repeat-rolling, obtain metal aluminum substrate thick film circuit dielectric slurry.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510334158.7A CN105176103A (en) | 2015-06-17 | 2015-06-17 | Thick film circuit insulating dielectric slurry for aluminum substrates, and preparation method thereof |
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|---|---|---|---|
| CN201510334158.7A CN105176103A (en) | 2015-06-17 | 2015-06-17 | Thick film circuit insulating dielectric slurry for aluminum substrates, and preparation method thereof |
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|---|---|---|---|
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106782942A (en) * | 2016-12-19 | 2017-05-31 | 东莞珂洛赫慕电子材料科技有限公司 | A kind of aluminium base dielectric slurry and preparation method thereof |
| CN107056066A (en) * | 2016-12-17 | 2017-08-18 | 颜宏志 | A kind of preparation method of crystallite thick film dielectric coating |
| CN107068244A (en) * | 2016-12-09 | 2017-08-18 | 东莞珂洛赫慕电子材料科技有限公司 | It is a kind of applied to dielectric slurry of aluminium base thick film circuit and preparation method thereof |
| CN108002703A (en) * | 2017-11-28 | 2018-05-08 | 贵州威顿晶磷电子材料股份有限公司 | A kind of lead-free glass powder with low melting point for amorphous powder core insulating wrapped and preparation method thereof |
| CN110722164A (en) * | 2019-11-29 | 2020-01-24 | 西北有色金属研究院 | Preparation method for improving uniformity of large-size powder rolled metal porous plate |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740160A (en) * | 2009-11-20 | 2010-06-16 | 湖南利德电子浆料有限公司 | Dielectric paste for metal aluminum substrate thick film circuit and preparation method thereof |
-
2015
- 2015-06-17 CN CN201510334158.7A patent/CN105176103A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740160A (en) * | 2009-11-20 | 2010-06-16 | 湖南利德电子浆料有限公司 | Dielectric paste for metal aluminum substrate thick film circuit and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 张联盟等: "《材料科学基础（第1版）》", 31 August 2004, 武汉理工大学出版社 * |
| 西北轻工业学院主编: "《玻璃工艺学（第1版）》", 31 January 2000, 中国轻工业出版社 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068244A (en) * | 2016-12-09 | 2017-08-18 | 东莞珂洛赫慕电子材料科技有限公司 | It is a kind of applied to dielectric slurry of aluminium base thick film circuit and preparation method thereof |
| CN107056066A (en) * | 2016-12-17 | 2017-08-18 | 颜宏志 | A kind of preparation method of crystallite thick film dielectric coating |
| CN106782942A (en) * | 2016-12-19 | 2017-05-31 | 东莞珂洛赫慕电子材料科技有限公司 | A kind of aluminium base dielectric slurry and preparation method thereof |
| CN108002703A (en) * | 2017-11-28 | 2018-05-08 | 贵州威顿晶磷电子材料股份有限公司 | A kind of lead-free glass powder with low melting point for amorphous powder core insulating wrapped and preparation method thereof |
| CN110722164A (en) * | 2019-11-29 | 2020-01-24 | 西北有色金属研究院 | Preparation method for improving uniformity of large-size powder rolled metal porous plate |
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Application publication date: 20151223 |
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