CN105172344A - Planar wire mesh with buffering structure - Google Patents
Planar wire mesh with buffering structure Download PDFInfo
- Publication number
- CN105172344A CN105172344A CN201510485028.3A CN201510485028A CN105172344A CN 105172344 A CN105172344 A CN 105172344A CN 201510485028 A CN201510485028 A CN 201510485028A CN 105172344 A CN105172344 A CN 105172344A
- Authority
- CN
- China
- Prior art keywords
- grid line
- region
- grid
- peripheral
- wire diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention discloses a planar wire mesh with a buffering structure. The planar wire mesh comprises a grid line bearing zone, a grid line structure arranged on the grid line bearing zone, a buffering transition zone and a peripheral strengthening zone, wherein the buffering transition zone and the peripheral strengthening zone are symmetrically arranged outside the grid line structure. Based on the reasonable design of the buffering transition zone and the peripheral strengthening zone, the printing life can be effectively prolonged.
Description
Technical field
The present invention relates to a kind of woven wire, be specifically related to a kind of planar metal silk screen with buffer structure, belong to solar battery sheet print field.
Background technology
Woven wire is more and more extensive in quoting of industrial printing industry, the common woven wire of tradition is that the wire with certain size is formed by braiding, based on the process that it is formed, the common woven wire of tradition has the node of Weaving type, whole wire side is difficult to reach the smooth of height, so can bring in printing application process and print the problems such as uneven, so, in recent years, the research and development of planar metal silk screen come into one's own all the more, planar metal silk screen is generally formed by electroforming process, and its surface has good flatness.
Fig. 1, it is the schematic diagram that the mask plate adopting a kind of planar metal silk screen to obtain carries out the printing of cell piece grid line shown in Fig. 2, the mask plate 10 obtained by planar metal silk screen is fixed on to be had on the housing 11 of some strength, mask plate 10 has the printed pattern region be made up of some thin grid lines 101 and 2-4 root main gate line 102, printing slurry 13(can be such as silver slurry) be placed on mask plate 10, scraper 12 prolongs diagram f direction and scrapes slurry 13, slurry 13 forms corresponding electrode pattern (not shown) through the thin grid line 101 in printed pattern region and main gate line 102 on mask plate 10 times side silicon wafers.
The above mask plate 10 is by applying emulsion on planar metal silk screen, then carry out at ad-hoc location that the operation such as exposure imaging formed, planar metal silk screen 30 overall schematic of mask plate 10 is formed just shown in Fig. 3, planar metal silk screen 30 is made up of grid line 301 and grid line supporting region 302, and grid line 301 is corresponding with thin grid line 101 position of mask plate 10.Figure 4 shows that the enlarged diagram in 30b region in Fig. 3, grid line supporting region 302 is made up of the grid array of arranging rule, forms the grid lines 3020 wire diameter uniformity of grid array; It is inner that grid line 301 is arranged on grid line supporting region 302, every bar grid line comprise one group of two ends all with the bridging line 3010 of grid line supporting region 302, the wire diameter of bridging line 3010 is less than the wire diameter of grid lines 3020, grid line 301 has larger percent opening, effect is starched to guarantee that the mask plate obtained has preferably, based on this, as shown in Figure 4, grid line 301 inside is without horizontal bridging line (another kind of understanding mode: the grid line 301 of planar metal silk screen 30 is extracted some grid lines out and formed on grid line supporting region 302 basis).The mask plate adopting above planar metal silk screen to obtain has the structure with mask plate 10 shown in Fig. 1, thin grid line 101 and main gate line 102 are exposed woven wire, other regions are with the emulsion of solidification, and planar metal silk screen is as the attachment carrier of emulsion.
The mask plate obtained by the above planar metal silk screen has good slurry printing effect, but in actual printing process, there is following problem: in scraper 12 moving process, can better bite on the silicon chip of below through grid line for making slurry, scraper 12 needs to apply certain pressure downwards on mask plate 10, so then easily causes mask plate to damage at scraper 12 both sides near zone.10a region is the region that scraper 12 side scrapes back and forth on mask plate as shown in fig. 1, and because this region can be subject to obvious shearing force in printing process, silk screen fracture comparatively easily occurs for it, thus reduces the service life of mask plate.
In view of above problem, there is no effective solution at present in industry, based on this, the present invention mainly explores a kind of technical scheme solving above technical problem from root.
Summary of the invention
In view of this, the invention provides a kind of planar metal silk screen with buffer structure, above-mentioned defect of the prior art can be overcome by adopting the obtained mask plate of this planar metal silk screen.
Concrete technical scheme involved in the present invention is as follows:
A kind of planar metal silk screen with buffer structure, it comprises grid line supporting region, the grid line structure be arranged on grid line supporting region, the buffering transition region being symmetricly set on described grid line structure outside and peripheral stiffened region, and described grid line supporting region, buffering transition region and peripheral stiffened region are formed by grid array; Described buffering transition region is arranged between described grid line supporting region and described peripheral stiffened region; Described grid line structure side, points at grid line supporting region on the direction of peripheral stiffened region, and the grid lines forming described buffering transition region grid array has at least a part of wire diameter to increase gradually; The grid lines forming described peripheral stiffened region has at least a part of wire diameter to be greater than the grid lines wire diameter forming described grid line supporting region.
Further, the grid forming described grid line supporting region grid array is rectangular mesh.
Further, form described buffering transition region, peripheral stiffened region grid array has and described grid line supporting region size of mesh opening, rectangular mesh that shape is identical.
Further, described grid line structure comprises one group of grid line be arranged in parallel, and direction, described grid line place is parallel or vertical with the grid lines forming described grid line supporting region grid array; Form the inner bridging line only had perpendicular to this direction, grid line place of every bar grid line of described grid line structure, described bridging line is for connecting the grid line supporting region of these grid line both sides, and the percent opening of described grid line is greater than the percent opening of described grid line supporting region.
Further, transition region and peripheral stiffened region is cushioned monosymmetric being provided with of the grid line structure being parallel to direction, described grid line place; In described grid line structure side, point on the direction of peripheral stiffened region at grid line supporting region, the grid lines wire diameter of described buffering transition region internal vertical in direction, described grid line place increases gradually.
Further, perpendicular to the grid lines wire diameter uniformity in direction, described grid line place in described grid line supporting region, and consistent with described buffering transition region grid lines wire diameter minimum dimension in the same direction; Perpendicular to the grid lines wire diameter uniformity in direction, described grid line place in described peripheral stiffened region, and consistent with described buffering transition region grid lines wire diameter full-size in the same direction.
Further, described grid line supporting region, buffering transition region and peripheral stiffened region all have identical size being parallel to the grid lines wire diameter on direction, described grid line place.
Further, in the grid line structure both sides perpendicular to direction, described grid line place, being also provided with of symmetry cushions transition region and peripheral stiffened region; In described grid line structure side, point on the direction of peripheral stiffened region at grid line supporting region, the grid lines wire diameter of described buffering transition region internal vertical in direction, described grid line place increases gradually.
Further, in the grid line structure both sides perpendicular to direction, described grid line place, the grid lines wire diameter uniformity in direction, described grid line place is parallel in described grid line supporting region, and consistent with described buffering transition region grid lines wire diameter minimum dimension in the same direction; The grid lines wire diameter uniformity in direction, described grid line place is parallel in described peripheral stiffened region, and consistent with described buffering transition region grid lines wire diameter full-size in the same direction.
Further, described grid line structure also comprises and is vertically installed in described grid line both sides for being communicated with the loop grid line of whole grid line.
In view of the present invention has above technical characteristic, its beneficial effect had is: planar metal silk screen hinge structure provided by the present invention has the buffering transition region of special setting and peripheral stiffened region, it has relatively large mechanical strength, the mask plate obtained by planar metal silk screen provided by the invention is printing in application process, the buffering transition region with higher mechanical strength can effectively overcome scraper both sides to mask plate apply the infringement that shearing force brings, effectively raise the life-span of mask plate; And the grid line supporting region relatively with less wire diameter can ensure that mask plate has good flexibility.
The aspect that the present invention adds and advantage will part provide in the following description, and part will become obvious from the following description, or be recognized by practice of the present invention.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present invention and advantage will become obvious and easy understand from the following description of the accompanying drawings of embodiments, wherein:
Figure 1 shows that in prior art the schematic diagram adopting mask plate to carry out the printing of cell piece grid line;
Figure 2 shows that the schematic cross-section in direction, A-A ' place in Fig. 1;
Figure 3 shows that the silk screen overall schematic forming prior art mask plate;
Figure 4 shows that the enlarged diagram in 30b region in Fig. 3;
Figure 5 shows that the real overall schematic of the embodiment of the present invention one planar metal silk screen;
Figure 6 shows that the enlarged diagram in 50c region in Fig. 5;
Figure 7 shows that the real overall schematic of the embodiment of the present invention two planar metal silk screen;
Figure 8 shows that the real overall schematic of the embodiment of the present invention three planar metal silk screen;
Figure 9 shows that the enlarged diagram in 50d region in Fig. 8;
Figure 10 shows that the real overall schematic of the embodiment of the present invention four plane woven wire;
Figure 11 shows that the enlarged diagram that a kind of structural metal mesh is corresponding to 50e region in Figure 10;
Figure 12 shows that the enlarged diagram that another kind of structural metal mesh is corresponding to 50e region in Figure 10;
Figure 13 is the real overall schematic of the embodiment of the present invention five planar metal silk screen;
Figure 14 shows that the enlarged diagram in 13f region in Figure 13.
In Fig. 1,10 is mask plate, and 11 is the housing of permanent mask plate 10, and 12 is the scraper of printing slurry, and 101 is the thin grid line on mask plate 10, and 102 is the main gate line on mask plate 10, and 10a is fragile region, f be scraper 12 scrape direction;
In Fig. 2,13 is the slurry printed;
In Fig. 3,30 is the silk screen of prior art, and 301 is grid line on silk screen 30, and 302 is the grid line supporting region of silk screen 30, and 30b is region to be amplified, and 3010 is the bridging line of grid line 301 inside, and 3020 is the grid lines forming grid line supporting region 302;
In Fig. 5,501 is the grid line on woven wire, and 502 is grid line supporting region, and 503 is buffering transition region, and 504 is peripheral stiffened region, and 50c is region to be amplified;
In Fig. 6, g is the direction that grid line supporting region points to peripheral stiffened region, and 5030 is the grid lines cushioning transition region 503 inner vertical direction;
In Fig. 8,505 is buffering transition region, and 506 is peripheral stiffened region, and 50d is region to be amplified;
In Fig. 9, h is the direction that grid line supporting region points to peripheral stiffened region, and 5050 is the grid lines cushioning transition region 505 inner horizontal direction;
In Figure 10,50e is region to be amplified;
In Figure 11,510 is the loop grid line connecting grid line 501 end points;
In Figure 13,130 is peripheral fixed area, and 13f is district to be amplified.
Detailed description of the invention
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Being exemplary below by the embodiment be described with reference to the drawings, only for explaining the present invention, and can not limitation of the present invention being interpreted as.
embodiment one:
Figure 5 shows that the real overall schematic of the embodiment of the present invention one planar metal silk screen, as shown in Figure 5, there is a planar metal silk screen for buffer structure, it comprise grid line supporting region 502, the grid line structure 501 be arranged on grid line supporting region 502, the buffering transition region 503 being symmetricly set on grid line structure 501 outside and peripheral stiffened region 504.It should be noted that, the dotted line in the application's midplane woven wire overall schematic is the line of demarcation as adjacent two zoness of different, and in fact silk screen surface does not exist the structure that this dotted line matches.
Figure 6 shows that the enlarged diagram in 50c region in Fig. 5, i.e. grid line supporting region 502, buffering transition region 503 and 504 3, peripheral stiffened region region partial schematic diagram.As shown in Figure 6, grid line supporting region 502, buffering transition region 503 and peripheral stiffened region 504 are formed by grid array, and buffering transition region 503 is arranged between grid line supporting region 502 and peripheral stiffened region 504.The grid forming the present embodiment grid line supporting region 502 grid array is rectangular mesh, form buffering transition region 503, the size of mesh opening of peripheral stiffened region 504 grid array, the size of mesh opening of shape and the grid array of formation grid line supporting region 502, shape are identical, be rectangular mesh.Certainly, in some other embodiment, allow to form buffering transition region 503, the size of mesh opening of peripheral stiffened region 504 grid array, the size of mesh opening of shape and the grid array of formation grid line supporting region 502, shape are different.
In the present embodiment, grid line structure 501 comprises one group of grid line be arranged in parallel, as shown in Figure 5, form the direction, grid line place of grid line structure 501 and the grid lines parallel or vertical (can with reference to Fig. 4 of prior art, direction, grid line 301 length place is perpendicular or parallel in grid lines 3020) forming grid line supporting region 502 grid array; Form the inner bridging line only had perpendicular to this direction, grid line place of every bar grid line of grid line structure 501, this bridging line is for connecting the grid line supporting region 502 of these grid line both sides, the percent opening of this grid line is greater than the percent opening (specifically do not illustrate in embodiment one, corresponding structure can with reference to the figure grid line structure of prior art) of described grid line supporting region.In actual application, the bridging wire diameter being arranged on grid line structure 501 inside is less than the grid lines warp of grid line supporting region 502, so that obtained mask plate has at thin grid line place the effect that declines preferably.
More specifically, in embodiment one, as shown in Figure 5, only transition region 503 and peripheral stiffened region 504 is cushioned monosymmetric being provided with of the grid line structure 501 being parallel to direction, grid line place.
In the side of grid line structure 501, point on the direction of peripheral stiffened region 504 at grid line supporting region 502, the grid lines wire diameter of buffering transition region 503 internal vertical in direction, grid line place increases gradually; Namely, on the direction of g shown in Fig. 6, the grid lines 5030 on buffering transition region 503 inner vertical direction increases () gradually in Fig. 6 from top to bottom.
In the present embodiment, perpendicular to the grid lines wire diameter uniformity in direction, grid line place in grid line supporting region 502, and consistent with buffering transition region 503 grid lines wire diameter minimum dimension in the same direction; Perpendicular to the grid lines wire diameter uniformity in direction, grid line place in peripheral stiffened region 504, and consistent with buffering transition region 503 grid lines wire diameter full-size in the same direction.In figure 6, vertical (shown in the g of direction direction) the grid lines wire diameter r uniformity namely in grid line supporting region 502, measure-alike topmost with the grid lines 5030 on buffering transition region 503 inner vertical direction; Vertical (shown in the g of direction direction) grid lines wire diameter R uniformity in peripheral stiffened region 504, measure-alike bottom with the grid lines 5030 on buffering transition region 503 inner vertical direction.
In embodiment one, as a kind of preferred version, grid line supporting region 502, buffering transition region 503 and peripheral stiffened region 504 all have identical size being parallel to the grid lines wire diameter on direction, grid line place, and the grid lines namely in Fig. 6 in horizontal direction all has the wire diameter size of formed objects.In further embodiments, allow grid line supporting region 502, buffering transition region 503 and peripheral stiffened region 504 to be of different sizes separately being parallel to the grid lines wire diameter on direction, grid line place, even the grid lines wire diameter of buffering transition region 503 interior parallel on direction, grid line place can be set to gradual manner.Such as, the grid lines cushioned in Fig. 6 in transition region 503 in horizontal direction is from top to bottom set to increase thick mode gradually, better to embody the effect of buffering transition region 503.
embodiment two
Figure 7 shows that the real overall schematic of the embodiment of the present invention two planar metal silk screen, be with the difference of embodiment one, buffering transition region 503 in embodiment one and the two ends of peripheral stiffened region 504 extend to the edge of planar metal silk screen, and the two ends of the buffering transition region 503 and peripheral stiffened region 504 that form planar metal silk screen in the present embodiment all do not extend to the edge of silk screen, but in actual design, can better play a role to make buffering transition region 503 and peripheral stiffened region 504, buffering transition region 503 and peripheral stiffened region 504 in the drawings length dimension are in a lateral direction not less than the grid line length dimension in a lateral direction forming grid line structure 501.
embodiment three
Figure 8 shows that the real overall schematic of the embodiment of the present invention three planar metal silk screen; Be with the difference of embodiment one, in the present embodiment, in the grid line structure both sides perpendicular to direction, grid line place, being also provided with of symmetry cushions transition region and peripheral stiffened region, as shown in Figure 8, buffering transition region 505, peripheral stiffened region 506 is provided with in the left and right sides of planar metal silk screen.
Figure 9 shows that the enlarged diagram in 50d region in Fig. 8, on the direction of h shown in Fig. 9, the grid lines 5050 on buffering transition region 505 inner horizontal direction increases () gradually in Fig. 9 from right to left.Level (shown in the h of direction direction) grid lines wire diameter uniformity in grid line supporting region 502, measure-alike with grid lines 5050 low order end on buffering transition region 505 inner horizontal direction; Level (shown in the h of direction direction) grid lines wire diameter uniformity in peripheral stiffened region 506, measure-alike with grid lines 5050 high order end on buffering transition region 505 inner horizontal direction.
In the present embodiment, the grid lines in Fig. 9 on vertical direction all has the wire diameter size of formed objects.
embodiment four
Figure 10 shows that the real overall schematic of the embodiment of the present invention four plane woven wire; Be with the difference of embodiment three, the buffering transition region 503,505 in embodiment four forms coherent " returning " shape structure, and buffering transition region does not all extend to the edge of planar metal silk screen.
In addition, as the more excellent embodiment of the present invention one, in the present embodiment, also there is the grid line structure shown in Figure 11, Figure 11 shows that the enlarged diagram that a kind of structural metal mesh is corresponding to 50e region in Figure 10; As shown in figure 11, the grid line both sides forming grid line structure 501 are provided with the loop grid line 510 for being communicated with whole grid line, loop grid line 510 relatively grid line supporting region 502 has different percent openings; When specifically arranging, it can increase the spacing between grid lines as shown in Figure 11.Certainly, in actual application, bridge line (or grid lines) wire diameter of grid line inside, loop also can be less than the grid lines wire diameter forming grid line supporting region 502.
embodiment five
In actual application, need planar metal silk screen to be fixed on and to have on the housing of some strength (can with reference to shown in prior art Fig. 1,2), this process is generally stick on housing by glue by direct or indirect for the edge of planar metal silk screen, in order to make planar metal silk screen be fixed on preferably on housing, present embodiments provide one preferably technical scheme.
Reference Figure 13,14, Figure 13 is the real overall schematic of the embodiment of the present invention 5 planar metal silk screen; Figure 14 shows that the enlarged diagram in 13f region in Figure 13.In the present embodiment, with embodiment one, two, three, four unlike: planar metal silk screen adds peripheral fixed area 130 on the basis of above embodiment, peripheral fixed area has the percent opening different from other regions (as grid line supporting region), as shown in figure 14, the grid forming peripheral fixed area 130 grid array has larger dimensioned area (Gridding length is longer in a lateral direction) relative to grid line supporting region 502.
As some other embodiment of the present invention, the grid forming planar metal silk screen grid line supporting region, buffering transition region and peripheral stiffened region grid array can be the grid of other shapes, such as, can be hexagon, as shown in figure 12; Certainly, in some applications, the grid forming grid line supporting region, buffering transition region and peripheral stiffened region grid array can also be the combination of dissimilar grid array, such as, the grid of grid line supporting region is regular hexagon, and the grid of buffering transition region and peripheral stiffened region is square structure; Even, at the same area, the grid forming this region can be made up of the grid of more than a kind of shape, as comprised hexagon and rectangle at the grid of grid line supporting region grid array simultaneously, not shown, but those skilled in the art can comparatively easy understand according to the present invention.
In addition, in the present invention, described planar metal silk screen can be obtained by electroforming process, and the planar metal silk screen of electrotyping forming has good flatness, can adapt to later stage printing process preferably.
Because planar metal silk screen involved in the present invention is mainly used in the printing of solar battery sheet, it has following requirement to the relative dimensions of planar metal silk screen, and (this requirement is only best applications size of the present invention, it can not as limiting the scope of the present invention): the wire diameter size range of grid line internal bridge line is 12-20 μm, the grid lines wire diameter size range of grid line supporting region is 18-25 μm, the grid lines wire diameter size range of buffering transition region is 20-35um, the grid lines wire diameter size range of peripheral stiffened region is 20-40um, the grid lines wire diameter size range of peripheral fixed area is 20-40um.
In the application, grid is the elementary cell forming grid array, and grid lines is the edge line of grid, and mesh shape determined by the grid lines center line forming each grid; In addition, size of mesh opening is different with grid lines wire diameter size concept, and size of mesh opening refers to the grid lines length forming each grid of grid array, and grid lines wire diameter size refers to the wire diameter width of the grid lines forming grid array; Percent opening refers on certain area, the percentage shared by the area of void region.
When adopting the above planar metal silk screen to make mask plate, need at the surface of planar metal silk screen coating emulsion, then carry out at ad-hoc location that the operation such as exposure imaging formed, the mask plate completed forms the region for slurry of biting with hollow out on the grid line position forming grid line structure, inside bridging silk screen being formed grid line structure has less wire diameter size, so be conducive to slurry in printing process (namely correspond to the thin grid line of mask plate, with reference in accompanying drawing 1 101).When adopting scraper to scrape printing to the slurry on mask plate, the moving direction of scraper is parallel to the direction, grid line place of planar metal silk screen (can with reference to accompanying drawing 1).
In view of the present invention has above technical characteristic, its beneficial effect had is: planar metal silk screen hinge structure provided by the present invention has the buffering transition region of special setting and peripheral stiffened region, it has relatively large mechanical strength, the mask plate obtained by planar metal silk screen provided by the invention is printing in application process, the buffering transition region with higher mechanical strength can effectively overcome scraper both sides to mask plate apply the infringement that shearing force brings, effectively raise the life-span of mask plate; And the grid line supporting region relatively with less wire diameter can ensure that mask plate has good flexibility.
It should be noted that; in serigraphy field; comparatively easy industry planar metal silk screen in invention being applied to other non-solar cell batteries sheet and making of technical staff, in other words, the present invention's scope required for protection is not limited to solar battery sheet print field.
Although be described in detail the specific embodiment of the present invention with reference to multiple illustrative examples of the present invention, but it must be understood that, those skilled in the art can design multiple other improvement and embodiment, these improve and embodiment will drop within spirit and scope.Specifically, within the scope of aforementioned open, accompanying drawing and claim, rational modification and improvement can be made in the layout of parts and/or sub-combination layout, and spirit of the present invention can not be departed from.Except modification and the improvement of parts and/or layout aspect, its scope is by claims and equivalents thereof.
Claims (10)
1. one kind has the planar metal silk screen of buffer structure, it comprises grid line supporting region, the grid line structure be arranged on grid line supporting region, the buffering transition region being symmetricly set on described grid line structure outside and peripheral stiffened region, and described grid line supporting region, buffering transition region and peripheral stiffened region are formed by grid array;
It is characterized in that:
Described buffering transition region is arranged between described grid line supporting region and described peripheral stiffened region;
Described grid line structure side, points at grid line supporting region on the direction of peripheral stiffened region, and the grid lines forming described buffering transition region grid array has at least a part of wire diameter to increase gradually;
The grid lines forming described peripheral stiffened region has at least a part of wire diameter to be greater than the grid lines wire diameter forming described grid line supporting region.
2. the planar metal silk screen with buffer structure according to claim 1, is characterized in that, the grid forming described grid line supporting region grid array is rectangular mesh.
3. the planar metal silk screen with buffer structure according to claim 2, is characterized in that, forms described buffering transition region, peripheral stiffened region grid array has and described grid line supporting region size of mesh opening, rectangular mesh that shape is identical.
4. the planar metal silk screen with buffer structure according to Claims 2 or 3, it is characterized in that, described grid line structure comprises one group of grid line be arranged in parallel, and direction, described grid line place is parallel or vertical with the grid lines forming described grid line supporting region grid array; Form the inner bridging line only had perpendicular to this direction, grid line place of every bar grid line of described grid line structure, described bridging line is for connecting the grid line supporting region of these grid line both sides, and the percent opening of described grid line is greater than the percent opening of described grid line supporting region.
5. the planar metal silk screen with buffer structure according to claim 4, is characterized in that, cushions transition region and peripheral stiffened region monosymmetric being provided with of the grid line structure being parallel to direction, described grid line place; In described grid line structure side, point on the direction of peripheral stiffened region at grid line supporting region, the grid lines wire diameter of described buffering transition region internal vertical in direction, described grid line place increases gradually.
6. the planar metal silk screen with buffer structure according to claim 5, it is characterized in that, perpendicular to the grid lines wire diameter uniformity in direction, described grid line place in described grid line supporting region, and consistent with described buffering transition region grid lines wire diameter minimum dimension in the same direction; Perpendicular to the grid lines wire diameter uniformity in direction, described grid line place in described peripheral stiffened region, and consistent with described buffering transition region grid lines wire diameter full-size in the same direction.
7. the planar metal silk screen with buffer structure according to claim 6, is characterized in that, described grid line supporting region, buffering transition region and peripheral stiffened region all have identical size being parallel to the grid lines wire diameter on direction, described grid line place.
8. the planar metal silk screen with buffer structure according to claim 5, is characterized in that, in the grid line structure both sides perpendicular to direction, described grid line place, being also provided with of symmetry cushions transition region and peripheral stiffened region; In described grid line structure side, point on the direction of peripheral stiffened region at grid line supporting region, the grid lines wire diameter of described buffering transition region internal vertical in direction, described grid line place increases gradually.
9. the planar metal silk screen with buffer structure according to claim 8, it is characterized in that, in the grid line structure both sides perpendicular to direction, described grid line place, the grid lines wire diameter uniformity in direction, described grid line place is parallel in described grid line supporting region, and consistent with described buffering transition region grid lines wire diameter minimum dimension in the same direction; The grid lines wire diameter uniformity in direction, described grid line place is parallel in described peripheral stiffened region, and consistent with described buffering transition region grid lines wire diameter full-size in the same direction.
10. according to the planar metal silk screen with buffer structure in claim 5-9 described in any one, it is characterized in that, described grid line structure also comprises and is vertically installed in described grid line both sides for being communicated with the loop grid line of whole grid line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510485028.3A CN105172344A (en) | 2015-08-10 | 2015-08-10 | Planar wire mesh with buffering structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510485028.3A CN105172344A (en) | 2015-08-10 | 2015-08-10 | Planar wire mesh with buffering structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105172344A true CN105172344A (en) | 2015-12-23 |
Family
ID=54894985
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510485028.3A Pending CN105172344A (en) | 2015-08-10 | 2015-08-10 | Planar wire mesh with buffering structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105172344A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0738231A (en) * | 1993-07-17 | 1995-02-07 | Yaskawa Electric Corp | Metal mask for cream solder and attaching method for same to frame |
| JPH07336047A (en) * | 1994-06-09 | 1995-12-22 | Sony Corp | Insulating layer forming method for multilayer printed board |
| CN102615951A (en) * | 2012-03-23 | 2012-08-01 | 昆山允升吉光电科技有限公司 | Wire mesh |
| CN103192595A (en) * | 2012-01-06 | 2013-07-10 | 昆山允升吉光电科技有限公司 | Screen mesh |
-
2015
- 2015-08-10 CN CN201510485028.3A patent/CN105172344A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0738231A (en) * | 1993-07-17 | 1995-02-07 | Yaskawa Electric Corp | Metal mask for cream solder and attaching method for same to frame |
| JPH07336047A (en) * | 1994-06-09 | 1995-12-22 | Sony Corp | Insulating layer forming method for multilayer printed board |
| CN103192595A (en) * | 2012-01-06 | 2013-07-10 | 昆山允升吉光电科技有限公司 | Screen mesh |
| CN102615951A (en) * | 2012-03-23 | 2012-08-01 | 昆山允升吉光电科技有限公司 | Wire mesh |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN202782135U (en) | Plane silk screen used for manufacturing solar cell piece printing screen | |
| JP2012163933A5 (en) | ||
| CN103770452A (en) | Metal wire mesh | |
| CN105172344A (en) | Planar wire mesh with buffering structure | |
| WO2013152693A1 (en) | Honeycomb-shaped metal wire mesh | |
| TWI503995B (en) | Electrode structure for solar cells and method for manufacturing the same | |
| CN203726976U (en) | Wire mesh | |
| CN104290433B (en) | Screen unit for printing and method for manufacturing the same | |
| CN103192595A (en) | Screen mesh | |
| JP2017140766A (en) | Metal mask for screen printing | |
| CN202428775U (en) | Screen mesh | |
| CN207676918U (en) | A kind of electrode structure at right side of MWT solar battery sheets | |
| TWM514399U (en) | Printing steel plate structure of solar cell with adaptive positive silver electrode | |
| TWI615287B (en) | Solar cell positive silver electrode designable printing steel plate structure | |
| CN102176500A (en) | Micro-nano structure for reducing dislocation concentration of GaN epitaxial growth and application thereof | |
| TW201918380A (en) | Screen stencil and screen printing method | |
| CN208745387U (en) | Passenger plane beam length purlin curing mold | |
| RU2600085C1 (en) | Information poster | |
| JP2006035512A (en) | Gravure printing plate, gravure printed matter and booklet | |
| CN102255024B (en) | Micronanometer structure for improving quality of GaN epitaxial material and application thereof | |
| CN202923099U (en) | Scraper strip | |
| CN202428774U (en) | Silk screen | |
| CN104290434B (en) | Metal screen for printing | |
| CN219115015U (en) | Non-junction metal screen plate | |
| TWM502574U (en) | Printing screen and solar cell fabricated by the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151223 |