CN105144401B - 具有NaxIn1SyClz缓冲层的薄层太阳能电池的层系统 - Google Patents

具有NaxIn1SyClz缓冲层的薄层太阳能电池的层系统 Download PDF

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Publication number
CN105144401B
CN105144401B CN201380032809.6A CN201380032809A CN105144401B CN 105144401 B CN105144401 B CN 105144401B CN 201380032809 A CN201380032809 A CN 201380032809A CN 105144401 B CN105144401 B CN 105144401B
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CN
China
Prior art keywords
layer
cushion
thin
sodium
buffer layer
Prior art date
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CN201380032809.6A
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English (en)
Chinese (zh)
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CN105144401A (zh
Inventor
T·哈普
S·约斯特
J·帕尔姆
S·波尔纳
T·达利博尔
R·迪特米勒
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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Bengbu Glass Industry Design and Research Institute
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Publication of CN105144401A publication Critical patent/CN105144401A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/128—Active materials comprising only Group I-II-IV-VI kesterite materials, e.g. Cu2ZnSnSe4 or Cu2ZnSnS4
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
CN201380032809.6A 2012-06-20 2013-06-19 具有NaxIn1SyClz缓冲层的薄层太阳能电池的层系统 Active CN105144401B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP12172699.6 2012-06-20
EP12172699 2012-06-20
PCT/EP2013/062703 WO2013189968A1 (de) 2012-06-20 2013-06-19 SCHICHTSYSTEM FÜR DÜNNSCHICHTSOLARZELLEN MIT NaxInlSyClz-PUFFERSCHICHT

Publications (2)

Publication Number Publication Date
CN105144401A CN105144401A (zh) 2015-12-09
CN105144401B true CN105144401B (zh) 2018-02-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380032809.6A Active CN105144401B (zh) 2012-06-20 2013-06-19 具有NaxIn1SyClz缓冲层的薄层太阳能电池的层系统

Country Status (8)

Country Link
US (1) US9871155B2 (cg-RX-API-DMAC7.html)
EP (1) EP2865011B1 (cg-RX-API-DMAC7.html)
JP (1) JP5985052B2 (cg-RX-API-DMAC7.html)
KR (1) KR101742541B1 (cg-RX-API-DMAC7.html)
CN (1) CN105144401B (cg-RX-API-DMAC7.html)
ES (1) ES2772449T3 (cg-RX-API-DMAC7.html)
IN (1) IN2014KN02866A (cg-RX-API-DMAC7.html)
WO (1) WO2013189968A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382618B2 (en) * 2014-07-18 2016-07-05 UChicago Argnonne, LLC Oxygen-free atomic layer deposition of indium sulfide
US20170345651A1 (en) * 2014-12-22 2017-11-30 Bengbu Design & Research Instute For Glass Industry Method for producing a layer system for thin-film solar cells having a sodium indium sulfide buffer layer
KR101671002B1 (ko) 2015-07-24 2016-11-01 청주대학교 산학협력단 태양전지 반사방지막 및 그 제조방법
WO2025184813A1 (en) * 2024-03-06 2025-09-12 Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. Method and apparatus for producing a layer system for the manufacture of thin-film solar cells

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100247745A1 (en) * 2007-09-12 2010-09-30 Dominik Rudmann Method for manufacturing a compound film

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JPH11204810A (ja) * 1998-01-08 1999-07-30 Asahi Chem Ind Co Ltd 化合物半導体太陽電池
DE19956735B4 (de) 1999-11-25 2008-08-21 Shell Erneuerbare Energien Gmbh Dünnfilmsolarzelle mit einer Chalkopyritverbindung und einer Titan und Sauerstoff enthaltenden Verbindung
FR2820241B1 (fr) 2001-01-31 2003-09-19 Saint Gobain Substrat transparent muni d'une electrode
US20090235987A1 (en) 2008-03-24 2009-09-24 Epv Solar, Inc. Chemical Treatments to Enhance Photovoltaic Performance of CIGS
DE102008024230A1 (de) 2008-05-19 2009-11-26 Avancis Gmbh & Co. Kg Schichtsystem für Solarzellen
JP2011204810A (ja) 2010-03-25 2011-10-13 Sumitomo Bakelite Co Ltd 波長変換部材および光起電装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100247745A1 (en) * 2007-09-12 2010-09-30 Dominik Rudmann Method for manufacturing a compound film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Deposition of In2S3 on Cu(In,Ga)(S,Se)2 thin film solar cell absorbers by spray ion layer gas reaction: Evidence of strong interfacial diffusion;M.Bar;《Applied Physics Letters》;20070329;第90卷;第132118页 *

Also Published As

Publication number Publication date
US9871155B2 (en) 2018-01-16
EP2865011A1 (de) 2015-04-29
WO2013189968A1 (de) 2013-12-27
JP2015520521A (ja) 2015-07-16
US20150295105A1 (en) 2015-10-15
KR101742541B1 (ko) 2017-06-01
JP5985052B2 (ja) 2016-09-06
IN2014KN02866A (cg-RX-API-DMAC7.html) 2015-05-08
CN105144401A (zh) 2015-12-09
KR20150013328A (ko) 2015-02-04
EP2865011B1 (de) 2019-11-13
ES2772449T3 (es) 2020-07-07

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TA01 Transfer of patent application right

Effective date of registration: 20180118

Address after: 1047 Tu Shan Road, Bengbu, Anhui

Applicant after: Bengbu design Institute of Glass Industry

Address before: Kolb tile

Applicant before: Saint-Gobain Glass France

TA01 Transfer of patent application right
GR01 Patent grant
GR01 Patent grant
CP03 Change of name, title or address

Address after: 233010 No. 1047 Tu Shan Road, Anhui, Bengbu

Patentee after: CHINA BUILDING MATERIALS BENGBU GLASS INDUSTRY DESIGN & RESEARCH INSTITUTE Co.,Ltd.

Address before: 233018 No. 1047 Tu Shan Road, Anhui, Bengbu

Patentee before: Bengbu Glass Industry Design and Research Institute

CP03 Change of name, title or address