CN105144311A - Metal nitride material for thermistors, method for producing same, and film-type thermistor sensor - Google Patents

Metal nitride material for thermistors, method for producing same, and film-type thermistor sensor Download PDF

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CN105144311A
CN105144311A CN201480022247.1A CN201480022247A CN105144311A CN 105144311 A CN105144311 A CN 105144311A CN 201480022247 A CN201480022247 A CN 201480022247A CN 105144311 A CN105144311 A CN 105144311A
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film
thermistor
metal nitride
nitride materials
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藤田利晃
田中宽
长友宪昭
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Mitsubishi Materials Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/06—Epitaxial-layer growth by reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances

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  • Inorganic Chemistry (AREA)
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  • General Physics & Mathematics (AREA)
  • Thermistors And Varistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)

Abstract

Provided are: a metal nitride material for thermistors that has high heat resistance, is highly reliable, and can be formed into a film directly on, e.g., a film without firing; a method for producing said metal nitride material; and a film-type thermistor sensor. This metal nitride material used for thermistors is made of a metal nitride represented by the general formula (M1-wVw)xAlyNz (wherein 0.0 < w < 1.0, 0.70 <= y/(x+y) <= 0.98, 0.4 <= z <= 0.5, and x+y+z = 1), and has a single-phase wurtzite hexagonal crystal structure, wherein said M is Ti and/or Cr. This method for producing said metal nitride material for thermistors comprises a film formation step for forming a film by performing reactive sputtering in a nitrogen-containing atmosphere by using an M-V-Al alloy sputtering target, wherein said M is Ti and/or Cr.

Description

Thermistor metal nitride materials and manufacture method thereof and film-type thermistor (temperature) sensor
Technical field
The present invention relates to a kind of can under non-firing condition the thermistor metal nitride materials of direct formation of film at surface on film etc. and manufacture method thereof and film-type thermistor (temperature) sensor.
Background technology
The thermistor material being used in temperature sensor etc. is in order to high accuracy, high sensitivity and require higher B constant.In the past, this thermistor material was generally the transition metal oxide (referenced patent document 1 ~ 3) of Mn, Co, Fe etc.Further, in these thermistor materials, in order to obtain stable thermistor characteristic, the heat treatment such as to burn till of more than 550 DEG C is needed.
Further, except the thermistor material be made up of metal oxide as above, such as, in patent documentation 4, propose by with general formula: M xa yn z(wherein, M represents at least one in Ta, Nb, Cr, Ti and Zr, and A represents at least one in Al, Si and B.0.1≤x≤0.8,0 < y≤0.6,0.1≤z≤0.8, x+y+z=1) the thermistor material that forms of the nitride that represents.And, in this patent documentation 4, only record following material as embodiment, be Ta-Al-N based material, and be set as 0.5≤x≤0.8,0.1≤y≤0.5,0.2≤z≤0.7, x+y+z=1.This Ta-Al-N based material by the material containing above-mentioned element is used as target, and is making containing carrying out sputtering in nitrogen atmosphere.Further, as required, the film of gained is heat-treated with 350 ~ 600 DEG C.
Further, as different from thermistor material one example, such as, in patent documentation 5, propose by with general formula: Cr 100-x-yn xm y(wherein, M is one or more the element be selected from Ti, V, Nb, Ta, Ni, Zr, Hf, Si, Ge, C, O, P, Se, Te, Zn, Cu, Bi, Fe, Mo, W, As, Sn, Sb, Pb, B, Ga, In, Tl, Ru, Rh, Re, Os, Ir, Pt, Pd, Ag, Au, Co, Be, Mg, Ca, Sr, Ba, Mn, Al and rare earth element, and crystalline texture is mainly bcc structure or is mainly the line and staff control of bcc structure and A15 type structure.0.0001≤x≤30,0≤y≤30,0.0001≤x+y≤50) the strain transducer resistive film material that forms of the nitride that represents.This strain transducer resistive film material nitrogen quantity x, accessory ingredient element M amount y are all set in the composition of 30 below atom %, according to the resistance variations of Cr-N base strain resistor film sensors, for measurement and the conversion of strain and stress.Further, this Cr-N-M based material as the target of the material containing above-mentioned element etc., and carries out reactive sputtering and is produced in the film forming atmosphere containing above-mentioned accessory ingredient gas.Further, as required, the film of gained is heat-treated with 200 ~ 1000 DEG C.
Patent documentation 1: Japanese Patent Publication 2000-068110 publication
Patent documentation 2: Japanese Patent Publication 2000-348903 publication
Patent documentation 3: Japanese Patent Publication 2006-324520 publication
Patent documentation 4: Japanese Patent Publication 2004-319737 publication
Patent documentation 5: Japanese Patent Publication 10-270201 publication
In above-mentioned technology in the past, leave following problem.
In recent years, study the exploitation of the film-type thermistor (temperature) sensor forming thermistor material on resin film, expecting to develop can the thermistor material of direct formation of film at surface on film.That is, expect by using film and obtain pliability thermistor (temperature) sensor.And then, expect to develop the very thin thermistor (temperature) sensor with 0.1mm left and right thickness, but usually use the baseplate material that have employed the potteries such as aluminium oxide in the past, if thickness is such as thinned to 0.1mm, then there is the very fragile and easy problem such as broken, but expect by using film and obtain very thin thermistor (temperature) sensor.
But, the usual heat resisting temperature of the film be made up of resin material is lower is less than 150 DEG C, even be known as the polyimides of the higher material of heat resisting temperature, owing to also only having the thermal endurance of about 200 DEG C, be difficult to be suitable for when therefore applying heat treatment in the formation process of thermistor material.Above-mentioned oxide thermosensitive resistor material in the past, in order to realize desired thermistor characteristic, needing more than 550 DEG C burn till, there is the problem that cannot realize the film-type thermistor (temperature) sensor of direct formation of film at surface on film.Therefore, expect to develop can under non-firing condition the thermistor material of direct formation of film at surface, even and in above-mentioned patent documentation 4 record thermistor material, in order to obtain desired thermistor characteristic, be necessary the film of gained to heat-treat with 350 ~ 600 DEG C as required.Further, this thermistor material, in the embodiment of Ta-Al-N based material, although obtain B constant: the material of about 500 ~ 3000K, do not have the description about thermal endurance, and the thermal reliability of nitride material system is indefinite.
And, the Cr-N-M based material of patent documentation 5 be B constant less be less than 500 material, and, if do not implement the heat treatment of more than 200 DEG C less than 1000 DEG C, then cannot guarantee the thermal endurance within 200 DEG C, therefore there is the problem that cannot realize the film-type thermistor (temperature) sensor of direct formation of film at surface on film.Therefore, expect to develop can under non-firing condition the thermistor material of direct formation of film at surface.
Summary of the invention
The present invention completes in view of described problem, its object is to provide one under non-firing condition, on film etc., and high-fire resistance can be had and the higher thermistor metal nitride materials of reliability and manufacture method and film-type thermistor (temperature) sensor by direct formation of film at surface.
The present inventors is conceived to AlN system and conducts in-depth research in nitride material, find to be difficult to obtain best thermistor characteristic (B constant: about 1000 ~ 6000K) as the AlN of insulator, but by replacing Al position with the specific metallic element improving conduction, and be set to specific crystalline texture, thus under non-firing condition, obtain good B constant and thermal endurance.
Therefore, the present invention obtains according to above-mentioned result of study, adopts following structure to solve described problem.
That is, the thermistor metal nitride materials involved by the 1st invention is the metal nitride materials for thermistor, it is characterized in that, by with general formula: (M 1-wv w) xal yn zthe metal nitride that (0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1) represents is formed, its crystalline texture is the single-phase of the wurtzite-type of hexagonal crystal system, and described M is one or both in Ti, Cr.
Thus, when M is Ti, general formula becomes (Ti 1-wv w) xal yn z(0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1).Further, when M is Cr, general formula becomes (Cr 1-wv w) xal yn z(0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1).And, when M is Ti, Cr, become (Ti av bcr c) xal yn z(0.0 < a < 1.0,0.0 < b < 1.0,0.0 < c < 1.0, a+b+c=1,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1).
This thermistor metal nitride materials is by with general formula: (M 1-wv w) xal yn zthe metal nitride that (0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1) represents is formed, and its crystalline texture is the single-phase of the wurtzite-type of hexagonal crystal system, described M is one or both in Ti, Cr, therefore under non-firing condition, obtain good B constant, and there is high-fire resistance.
In addition, if above-mentioned " y/ (x+y) " (that is, Al/ (M+V+Al)) is less than 0.70, then can not get the single-phase of wurtzite-type, the crystalline phase with the coexisting phase of NaCl type phase or only NaCl type can be become, sufficient high resistance and high B constant cannot be obtained.
Further, if above-mentioned " y/ (x+y) " (that is, Al/ (M+V+Al)) is greater than 0.98, then resistivity is very high, shows high insulating properties, therefore cannot be suitable for as thermistor material.
Further, if above-mentioned " z " (that is, N/ (M+V+Al+N)) is less than 0.4, then the nitrogenize amount of metal is less, therefore can not get the single-phase of wurtzite-type, can not get sufficient high resistance and high B constant.
And, if above-mentioned " z " (that is, N/ (M+V+Al+N)) is greater than 0.5, then cannot obtain the single-phase of wurtzite-type.This situation result from wurtzite-type single-phase in, do not have the stoichiometric proportion during defect on nitrogen position to be the situation of 0.5 (that is, N/ (M+V+Al+N)=0.5).
The feature of the thermistor metal nitride materials involved by the 2nd invention is, in the 1st invention, is formed as membranaceous, and is the column crystallization extended along the direction perpendicular to the surface of described film.
That is, this thermistor metal nitride materials, due to the column crystallization for extending along the direction perpendicular to the surface of film, therefore the crystallinity of film is higher, obtains high-fire resistance.
The feature of the thermistor metal nitride materials involved by the 3rd invention is, in the 1st or the 2nd invention, is formed as membranaceous, and on the direction on the surface perpendicular to described film, the orientation of c-axis is better than the orientation of a axle.
That is, this thermistor metal nitride materials, because the orientation of c-axis is better than the orientation of a axle on the direction on the surface perpendicular to film, obtains higher B constant compared with therefore stronger with a axle orientation situation, and also excellent to the reliability of thermal endurance.
The feature of the film-type thermistor (temperature) sensor involved by the 4th invention is to possess: insulating properties film; Thin-film thermistor portion, this insulating properties film is formed by the thermistor metal nitride materials of arbitrary invention in the 1st to the 3rd; And a pair pattern electrode, be at least formed in upside or the downside in described thin-film thermistor portion.
Namely, in this film-type thermistor (temperature) sensor, owing to being formed with thin-film thermistor portion by the thermistor metal nitride materials of arbitrary invention in the 1st to the 3rd on insulating properties film, therefore by the high B constant that formed under non-firing condition and the higher thin-film thermistor portion of thermal endurance, the insulating properties film that the thermal endurances such as resin film are lower can be used, and obtain there is the slim of good thermistor characteristic and pliability thermistor (temperature) sensor.
And, usually use the baseplate material that have employed the pottery of aluminium oxide etc. in the past, if thickness is such as thinned to 0.1mm, then there is the very fragile and easy problem such as broken, but in the present invention due to film can be used, therefore, it is possible to obtain the very thin film-type thermistor (temperature) sensor of such as thickness 0.1mm.
The feature of the film-type thermistor (temperature) sensor involved by the 5th invention is, in the 4th invention, described M at least comprises one or both of Cr in Ti, Cr, and the part being at least engaged in described thin-film thermistor portion of described pattern electrode is formed by Cr.
Namely, in this film-type thermistor (temperature) sensor, because the part being at least engaged in thin-film thermistor portion of pattern electrode is formed by Cr, therefore obtain the high zygosity of the thin-film thermistor portion of MVAIN (M at least comprises one or both of Cr in Ti, Cr) and the Cr of pattern electrode.That is, by the Cr of one of the element using forming thin-film thermistor portion as the junction surface material of pattern electrode, both high zygosities can be obtained, and can high reliability be obtained.
The manufacture method of the thermistor metal nitride materials involved by the 6th invention is the method for the thermistor metal nitride materials of arbitrary invention in manufacture the 1st to the 3rd, it is characterized in that, have the film formation process using M-V-Al alloy sputtering targets to carry out reactive sputtering and film forming in nitrogen containing atmosphere, described M is one or both in Ti, Cr.
Namely, in the manufacture method of this thermistor metal nitride materials, in nitrogen containing atmosphere, reactive sputtering and film forming is carried out owing to using M-V-Al alloy sputtering targets, and described M is one or both in Ti, Cr, therefore, it is possible to the thermistor metal nitride materials of the present invention be made up of above-mentioned MVAIN (M be in Ti, Cr one or both) is carried out film forming under non-firing condition.
The feature of the manufacture method of the thermistor metal nitride materials involved by the 7th invention is, in the 6th invention, the sputtering pressure in described reactive sputtering is set smaller than 0.7Pa.
Namely, in the manufacture method of this thermistor metal nitride materials, due to the sputtering pressure in reactive sputtering is set smaller than 0.7Pa, therefore, it is possible to the orientation being formed in c-axis on the direction perpendicular to the surface of film is better than the film of the thermistor metal nitride materials involved by the 3rd invention of the orientation of a axle.
The feature of the manufacture method of the thermistor metal nitride materials involved by the 8th invention is, in the 6th or the 7th invention, has after described film formation process, irradiates the operation of nitrogen plasma to formed film.
That is, in the manufacture method of this thermistor metal nitride materials, due to after film formation process, irradiate nitrogen plasma to formed film, therefore the nitrogen defect of film tails off thus thermal endurance is further enhanced.
According to the present invention, reach following effect.
That is, according to thermistor metal nitride materials involved in the present invention, by with general formula: (M 1-wv w) xal yn zthe metal nitride that (0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1) represents is formed, its crystalline texture is the single-phase of the wurtzite-type of hexagonal crystal system, described M is one or both in Ti, Cr, therefore under non-firing condition, obtain good B constant, and there is high-fire resistance.And, according to the manufacture method of thermistor metal nitride materials involved in the present invention, in nitrogen containing atmosphere, reactive sputtering and film forming is carried out, therefore, it is possible to the thermistor metal nitride materials of the present invention be made up of above-mentioned MVAIN is carried out film forming under non-firing condition owing to using M-V-Al alloy sputtering targets.And, according to film-type thermistor (temperature) sensor involved in the present invention, owing to being formed with thin-film thermistor portion by thermistor metal nitride materials of the present invention on insulating properties film, therefore using the lower insulating properties film of the thermal endurances such as resin film and obtain there is the slim of good thermistor characteristic and pliability thermistor (temperature) sensor.And baseplate material is not if thinning just very fragile and hold breakable pottery, but resin film, therefore obtain the very thin film-type thermistor (temperature) sensor of thickness 0.1mm.
Accompanying drawing explanation
Fig. 1 is in an execution mode of thermistor metal nitride materials involved in the present invention and manufacture method and film-type thermistor (temperature) sensor, represents (Ti+V)-Al-N system ternary inorganic solution of the compositing range of thermistor metal nitride materials.
Fig. 2 is in an execution mode of thermistor metal nitride materials involved in the present invention and manufacture method and film-type thermistor (temperature) sensor, represents (Cr+V)-Al-N system ternary inorganic solution of the compositing range of thermistor metal nitride materials.
Fig. 3 is in an execution mode of thermistor metal nitride materials involved in the present invention and manufacture method and film-type thermistor (temperature) sensor, represents (Ti+Cr+V)-Al-N system ternary inorganic solution of the compositing range of thermistor metal nitride materials.
Fig. 4 is in the present embodiment, represents the stereogram of film-type thermistor (temperature) sensor.
Fig. 5 is in the present embodiment, represents the stereogram of the manufacture method of film-type thermistor (temperature) sensor with process sequence.
Fig. 6 is in the embodiment of thermistor metal nitride materials involved in the present invention and manufacture method and film-type thermistor (temperature) sensor, represents front view and the vertical view of the film evaluation element of thermistor metal nitride materials.
Fig. 7 is in embodiment involved in the present invention and comparative example, when being Ti for M, represents the chart of the relation between 25 DEG C of resistivity and B constant.
Fig. 8 is in embodiment involved in the present invention and comparative example, when being Cr for M, represents the chart of the relation between 25 DEG C of resistivity and B constant.
Fig. 9 is in embodiment involved in the present invention and comparative example, when being Ti, Cr for M, represents the chart of the relation between 25 DEG C of resistivity and B constant.
Figure 10 is in embodiment involved in the present invention and comparative example, represents the chart of the relation between Al/ (Ti+V+Al) ratio and B constant.
Figure 11 is in embodiment involved in the present invention and comparative example, represents the chart of the relation between Al/ (Cr+V+Al) ratio and B constant.
Figure 12 is in embodiment involved in the present invention and comparative example, represents the chart of the relation between Al/ (Ti+Cr+V+Al) ratio and B constant.
Figure 13 is in embodiment involved in the present invention and comparative example, represents the chart of the relation between V/ (Ti+V) ratio and B constant.
Figure 14 is in embodiment involved in the present invention and comparative example, represents the chart of the relation between V/ (Cr+V) ratio and B constant.
Figure 15 is in embodiment involved in the present invention, represents the chart of X-ray diffraction (XRD) result when c-axis orientation being set to Al/ (Ti+V+Al)=0.88 is stronger.
Figure 16 is in embodiment involved in the present invention, represents the chart of X-ray diffraction (XRD) result when c-axis orientation being set to Al/ (Cr+V+Al)=0.95 is stronger.
Figure 17 is in embodiment involved in the present invention, represents the chart of X-ray diffraction (XRD) result when c-axis orientation being set to Al/ (Ti+Cr+V+Al)=0.85 is stronger.
Figure 18 is in embodiment involved in the present invention, represents the chart of X-ray diffraction (XRD) result when a axle orientation being set to Al/ (Ti+V+Al)=0.86 is stronger.
Figure 19 is in embodiment involved in the present invention, represents the chart of X-ray diffraction (XRD) result when a axle orientation being set to Al/ (Cr+V+Al)=0.89 is stronger.
Figure 20 is in embodiment involved in the present invention, represents the chart of X-ray diffraction (XRD) result when a axle orientation being set to Al/ (Ti+Cr+V+Al)=0.85 is stronger.
Figure 21 is in embodiment involved in the present invention, represent Al/ (Ti+V+Al) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.
Figure 22 is in embodiment involved in the present invention, represent Al/ (Cr+V+Al) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.
Figure 23 is in embodiment involved in the present invention, represent Al/ (Ti+Cr+V+Al) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.
Figure 24 is in embodiment involved in the present invention, represent V/ (Ti+V) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.
Figure 25 is in embodiment involved in the present invention, represent V/ (Cr+V) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.
Figure 26 is in embodiment involved in the present invention, when being Ti for M, represents the section S EM photo of the embodiment that c-axis orientation is stronger.
Figure 27 is in embodiment involved in the present invention, when being Cr for M, represents the section S EM photo of the embodiment that c-axis orientation is stronger.
Figure 28 is in embodiment involved in the present invention, when being Ti, Cr for M, represents the section S EM photo of the embodiment that c-axis orientation is stronger.
Figure 29 is in embodiment involved in the present invention, when being Ti for M, represents the section S EM photo of the embodiment that a axle orientation is stronger.
Figure 30 is in embodiment involved in the present invention, when being Cr for M, represents the section S EM photo of the embodiment that a axle orientation is stronger.
Figure 31 is in embodiment involved in the present invention, when being Ti, Cr for M, represents the section S EM photo of the embodiment that a axle orientation is stronger.
Embodiment
Below, referring to figs. 1 to Fig. 5, an execution mode of thermistor metal nitride materials involved in the present invention and manufacture method and film-type thermistor (temperature) sensor is described.In addition, in the accompanying drawing used in the following description, be set to the size that can identify or easily identify in order to Jiang Gebu and suitably change engineer's scale as required.
The thermistor metal nitride materials of present embodiment is the metal nitride materials for thermistor, by with general formula: (M 1-wv w) xal yn zthe metal nitride that (0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1) represents is formed, and its crystalline texture is wurtzite-type (the space group P6 of hexagonal crystal system 3mc (No.186)) single-phase, described M is one or both in Ti, Cr.
That is, as shown in Figure 1, when M is Ti, this thermistor metal nitride materials is for having forming in the region that surrounded by some A, B, C, the D in Ti-V (vanadium)-Al-N system ternary inorganic solution, and crystalline phase is the metal nitride of wurtzite-type.
And, as shown in Figure 2, when M is Cr, this thermistor metal nitride materials is for having forming in the region that surrounded by some A, B, C, the D in Cr-V (vanadium)-Al-N system ternary inorganic solution, and crystalline phase is the metal nitride of wurtzite-type.
And, as shown in Figure 3, when M is Ti, Cr, this thermistor metal nitride materials is for having by Ti-Cr-V (vanadium)) forming in the region that surrounds of some A, B, C, D in-Al-N system ternary inorganic solution, and crystalline phase is the metal nitride of wurtzite-type.
In addition, each ratio of components (x, y, z) (atm%) of above-mentioned some A, B, C, D is A (15.0,35.0,50.0), B (1.0,49.0,50.0), C (1.2,58.8,40.0), D (18.0,42.0,40.0).
Further, this thermistor metal nitride materials is formed as membranaceous, and is the column crystallization extended along the direction perpendicular to the surface of described film.And preferably on the direction on the surface perpendicular to film, the orientation of c-axis is better than the orientation of a axle.
In addition, on the direction (film thickness direction) on the surface perpendicular to film, judge that a axle orientation (100) is comparatively strong or c-axis orientation (002) is stronger, it is the orientation utilizing X-ray diffraction (XRD) to investigate crystal axis, according to the peak intensity ratio of (100) (representing the hkl index of a axle orientation) with (002) (representing the hkl index of c-axis orientation), when " peak intensities of (100) "/" peak intensity of (002) " is less than 1, be set to c-axis orientation stronger.
Then, the film-type thermistor (temperature) sensor of the thermistor metal nitride materials employing present embodiment is described.As shown in Figure 4, this film-type thermistor (temperature) sensor 1 possesses: insulating properties film 2; Thin-film thermistor portion 3, this insulating properties film 2 is formed by above-mentioned thermistor metal nitride materials; And a pair pattern electrode 4, be at least formed in thin-film thermistor portion 3.
Above-mentioned insulating properties film 2 is such as formed as banded by polyimide resin sheet.In addition, as insulating properties film 2, can also be PET: polyethylene terephthalate, PEN: Polyethylene Naphthalate etc.
Above-mentioned a pair pattern electrode 4 such as forms pattern by the laminated metal membrane of Cr film and Au film, and has: a pair comb electrode portion 4a of the comb-like pattern configured with mutually opposing state in thin-film thermistor portion 3; And leading section is connected to these comb electrode portion 4a and base end part is configured at the end of insulating properties film 2 and a pair rectilinear extension 4b extended.
Further, on the base end part of a pair rectilinear extension 4b, the lead division as lead-in wire is formed with the plated portions 4c such as plating Au.One end that material etc. is bonded to lead-in wire is welded at this plated portions 4c.And except the end of insulating properties film 2 comprising plated portions 4c, on this insulating properties film 2, pressurizing binding has polyimide cover layer film 5.In addition, by printing, the resin material layer of polyimides or epoxy is formed on insulating properties film 2, to replace polyimide cover layer film 5.
With reference to figure 5, below the manufacture method of the manufacture method of this thermistor metal nitride materials and the film-type thermistor (temperature) sensor 1 of use the method is described.
First, the manufacture method of the thermistor metal nitride materials of present embodiment has film formation process, and described film formation process uses M-V-Al alloy sputtering targets in nitrogen containing atmosphere, carry out reactive sputtering and film forming.Wherein, described M is one or both in Ti, Cr.
That is, when M is Ti, use Ti-V-Al alloy sputtering targets, and when M is Cr, use Cr-V-Al alloy sputtering targets, and when M is Ti, Cr, use Ti-Cr-V-Al alloy sputtering targets.
Further, preferably the sputtering pressure in above-mentioned reactive sputtering is set smaller than 0.7Pa.
And, preferably after above-mentioned film formation process, irradiate nitrogen plasma to formed film.
More specifically, as shown in (b) of Fig. 5, on the insulating properties film 2 of the polyimide film of the thickness shown in (a) of such as Fig. 5 50 μm, by the thin-film thermistor portion 3 formed by the thermistor metal nitride materials of above-mentioned present embodiment of reactive sputtering method film forming 200nm.
When M is Ti, sputtering condition is now such as final vacuum: 5 × 10 -6pa, sputtering pressure: 0.4Pa, target drop into power (power output): 300W, and under the mixed-gas atmosphere of Ar gas+nitrogen, are set to nitrogen partial pressure: 20%.
When M is Cr, sputtering condition is now such as final vacuum: 5 × 10 -6pa, sputtering pressure: 0.67Pa, target drop into power (power output): 300W, and under the mixed-gas atmosphere of Ar gas+nitrogen, are set to nitrogen partial pressure: 80%.
When M is Ti, Cr, sputtering condition is now such as final vacuum: 5 × 10 -6pa, sputtering pressure: 0.4Pa, target drop into power (power output): 300W, and under the mixed-gas atmosphere of Ar gas+nitrogen, are set to nitrogen partial pressure: 30%.
Further, metal mask is used to be that desired size forms thin-film thermistor portion 3 by thermistor metal nitride materials film forming.In addition, preferably nitrogen plasma is irradiated to formed thin-film thermistor portion 3.Such as, in vacuum degree: 6.7Pa, power output: 200W and N 2under gas atmosphere, nitrogen plasma is made to be irradiated to thin-film thermistor portion 3.
Then, by sputtering method, such as, form Cr film 20nm, form Au film 200nm further.And, thereon with after excellent coating machine coating anti-corrosion liquid, at 110 DEG C, carrying out preliminary drying 1 point 30 seconds, after utilizing exposure device photosensitive, remove unwanted part with developer solution, within 5 minutes, carrying out pattern formation by drying after at 150 DEG C.Then, by commercially available Au etchant and Cr etchant, wet etching is carried out to unwanted electrode part, as shown in (c) of Fig. 5, peeled off by resist and form the pattern electrode 4 with desired comb electrode portion 4a.In addition, pattern electrode 4 can be pre-formed on insulating properties film 2, and on its comb electrode portion 4a film forming thin-film thermistor portion 3.Now, the comb electrode portion 4a of pattern electrode 4 is formed in the downside in thin-film thermistor portion 3.
Then, as shown in (d) of Fig. 5, such as, the polyimide cover layer film 5 with binding agent of thickness 50 μm is positioned on insulating properties film 2, and utilizes pressuring machine pressurize 10 minutes with 2MPa at 150 DEG C and make it bond.And, as shown in (e) of Fig. 5, to the end of rectilinear extension 4b, such as, form the Au film of 2 μm by Au electroplate liquid and form plated portions 4c.
In addition, when making multiple film-type thermistor (temperature) sensor 1, on the large-scale thin slice of insulating properties film 2, after forming multiple thin-film thermistor portion 3 and pattern electrode 4 as mentioned above, become each film-type thermistor (temperature) sensor 1 from large-scale cutting sheet simultaneously.
So, the thinner film-type thermistor (temperature) sensor 1 such as size being set to 25 × 3.6mm, thickness is set to 0.1mm is obtained.
The thermistor metal nitride materials of present embodiment like this is by with general formula: (M 1-wv w) xal yn zthe metal nitride that (0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1) represents is formed, and its crystalline texture is wurtzite-type (the space group P6 of hexagonal crystal system 3mc (No.186)) single-phase, described M is one or both in Ti, Cr, therefore under non-firing condition, obtains good B constant, and has high-fire resistance.
Further, this thermistor metal nitride materials is owing to being the column crystallization extended along the direction perpendicular to the surface of film, and therefore the crystallinity of film is higher, and obtains high-fire resistance.
And, in this thermistor metal nitride materials, by making the orientation of c-axis be better than the orientation of a axle on the direction on the surface perpendicular to film, compared with the situation that a axle orientation is stronger, obtain higher B constant.
In the manufacture method of the thermistor metal nitride materials of present embodiment, in nitrogen containing atmosphere, reactive sputtering and film forming is carried out owing to using M-V-Al alloy sputtering targets, described M is one or both in Ti, Cr, therefore, it is possible to the above-mentioned thermistor metal nitride materials be made up of above-mentioned MVAlN (M be in Ti, Cr one or both) is carried out film forming under non-firing condition.
Further, the sputtering pressure in reactive sputtering is set smaller than 0.7Pa, the orientation that can be formed in c-axis on the direction perpendicular to the surface of film is thus better than the film of the thermistor metal nitride materials of a axle orientation.
And due to after film formation process, irradiate nitrogen plasma to formed film, therefore the nitrogen defect of film tails off thus thermal endurance is further enhanced.
Therefore, in the film-type thermistor (temperature) sensor 1 of thermistor metal nitride materials employing present embodiment, owing to being formed with thin-film thermistor portion 3 by above-mentioned thermistor metal nitride materials on insulating properties film 2, therefore by the high B constant that formed under non-firing condition and the higher thin-film thermistor portion 3 of thermal endurance, the insulating properties film 2 that the thermal endurances such as resin film are lower can be used, and obtain there is the slim of good thermistor characteristic and pliability thermistor (temperature) sensor.
And, usually use the baseplate material that have employed the potteries such as aluminium oxide in the past, if thickness is such as thinned to 0.1mm, then there is the very fragile and easy problem such as broken, but owing to film can be used in the present embodiment, therefore, it is possible to obtain the very thin film-type thermistor (temperature) sensor of such as thickness 0.1mm.
And, because the part being at least engaged in thin-film thermistor portion 3 of pattern electrode 4 is formed by Cr film, therefore obtain the thin-film thermistor portion 3 of MVAIN (M at least comprises one or both of Cr in Ti, Cr) and the high zygosity of the Cr film of pattern electrode 4.That is, by the Cr of one of the element using forming thin-film thermistor portion 3 as the junction surface material of pattern electrode 4, both high zygosities can be obtained, and can high reliability be obtained.
Embodiment
Then, about thermistor metal nitride materials involved in the present invention and manufacture method thereof and film-type thermistor (temperature) sensor, with reference to figure 6 to Figure 31, the embodiment specifically described by making according to above-mentioned execution mode carries out the result evaluated.
The making > of < film evaluation element
As embodiments of the invention and comparative example, the film evaluation element 121 shown in following construction drawing 6.
First, utilize reactive sputtering method, use the Ti-V-Al alloys target of various ratio of components, Cr-V-Al alloys target and Ti-Cr-V-Al alloys target, on the Si wafer of band heat oxide film becoming Si substrate S, form the thin-film thermistor portion 3 of the thermistor metal nitride materials formed with the various ratio of componentss shown in table 1 to table 3 of thickness 500nm.
Then, in above-mentioned thin-film thermistor portion 3, formed the Cr film of 20nm by sputtering method, form the Au film of 200nm further.And, with after spin coater coating anti-corrosion liquid on it, at 110 DEG C, carrying out preliminary drying 1 point 30 seconds, after utilizing exposure device photosensitive, remove unwanted part with developer solution, within 5 minutes, carrying out pattern formation by drying after at 150 DEG C.Then, by commercially available Au etchant and Cr etchant, wet etching is carried out to unwanted electrode part, peeled off by resist and form the pattern electrode 124 with desired comb electrode portion 124a.Further, sheet is cut to and as the film evaluation element 121 of the evaluation of B constant and heat-resistance test.
In addition, as a comparison, for (M 1-wv w) xal yn zouter and the comparative example that crystallographic system is different makes similarly and evaluates in scope of the present invention for the ratio of components of (M be in Ti, Cr one or both).
The evaluation > of < film
(1) composition analysis
For the thin-film thermistor portion 3 obtained by reactive sputtering method, carry out elementary analysis with x-ray photoelectron spectroscopy (XPS).In this XPS, sputtered by Ar, in the sputter face of degree of depth 20nm from most surface, implement quantitative analysis.Its result shown in table 1 to table 3.In addition, represent with " atom % " with the ratio of components in following table.For a part of sample, implement the quantitative analysis in the sputter face of degree of depth 100nm from most surface, confirm in the scope of quantitative accuracy with the composition that the sputter face of degree of depth 20nm is identical.
In addition, above-mentioned x-ray photoelectron spectroscopy (XPS) using x-ray source as MgK α (350W), logical can: 58.5eV, measuring interval: 0.125eV, angle: 45deg is taken out to the photoelectron in test portion face, analyzed area implements quantitative analysis under being about the condition of 800 μm of φ.In addition, about quantitative accuracy, the quantitative accuracy of N/ (M+V+Al+N) is that the quantitative accuracy of ± 2%, Al/ (M+V+Al) is for ± 1% (M be in Ti, Cr one or both).
(2) ratio resistance measures
For the thin-film thermistor portion 3 obtained by reactive sputtering method, be determined at the ratio resistance at 25 DEG C by four-terminal method.Its result shown in table 1 to table 3.
(3) B constant measuring
In thermostat, measure 25 DEG C of film evaluation element 121 and the resistance value of 50 DEG C, calculate B constant by the resistance value of 25 DEG C and 50 DEG C.Its result shown in table 1 to table 3.Further, thermistor into being with negative temperature characteristic is confirmed from 25 DEG C and the resistance value of 50 DEG C.
In addition, the B constant calculating method in the present invention is tried to achieve by following formula by 25 DEG C and 50 DEG C of respective resistance values as mentioned above.
B constant (K)=ln (R25/R50)/(1/T25-1/T50)
R25 (Ω): the resistance value at 25 DEG C
R50 (Ω): the resistance value at 50 DEG C
T25 (K): 298.15K represents 25 DEG C with absolute temperature
T50 (K): 323.15K represents 50 DEG C with absolute temperature
As can be known from these results, (M 1-wv w) xal yn zin the axonometric projection of the ternary system of ratio of components shown in Fig. 1 to Fig. 3 of (M is one or both in Ti, Cr), in the region surrounded by some A, B, C, D, namely, in whole embodiments in the region becoming " 0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1 ", reach resistivity: the thermistor characteristic of 100 more than Ω cm, B constant: more than 1500K.
According to the above results, the chart of the resistivity represent 25 DEG C shown in Fig. 7 to Fig. 9 at and the relation between B constant.Further, the chart of the relation between expression Al/ (Ti+V+Al) ratio shown in Figure 10 and B constant, and, the chart of the relation between expression Al/ (Cr+V+Al) ratio shown in Figure 11 and B constant.Further, the chart of the relation between expression Al/ (Ti+Cr+V+Al) ratio shown in Figure 12 and B constant.
And, the chart of the relation between expression V/ (Ti+V) ratio shown in Figure 13 and B constant.Further, the chart of the relation between expression V/ (Cr+V) ratio shown in Figure 14 and B constant.
According to these charts, at Al/ (Ti+V+Al)=0.7 ~ 0.98, and the region of N/ (Ti+V+Al+N)=0.4 ~ 0.5, crystallographic system is the high resistance and the region of high B constant that the single-phase material of the wurtzite-type of the hexagonal crystal ratio resistance value that can realize at 25 DEG C is 100 more than Ω cm, B constant is more than 1500K.
And, at Al/ (Cr+V+Al)=0.7 ~ 0.98, and the region of N/ (Cr+V+Al+N)=0.4 ~ 0.5, crystallographic system is the high resistance and the region of high B constant that the single-phase material of the wurtzite-type of the hexagonal crystal ratio resistance value that can realize at 25 DEG C is 100 more than Ω cm, B constant is more than 1500K.And, at Al/ (Ti+Cr+V+Al)=0.7 ~ 0.98, and the region of N/ (Ti+Cr+V+Al+N)=0.4 ~ 0.5, crystallographic system is the high resistance and the region of high B constant that the single-phase material of the wurtzite-type of the hexagonal crystal ratio resistance value that can realize at 25 DEG C is 100 more than Ω cm, B constant is more than 1500K.
In addition, in the data of Fig. 7 and Figure 14, relative to identical Al/ (Ti+V+Al) than or V/ (Ti+V) than, identical Al/ (Cr+V+Al) than V/ (Cr+V) than or identical Al/ (Ti+Cr+V+Al) ratio, it is because the nitrogen quantity in crystallization is different that B constant produces deviation, or because the lattice defect amounts such as nitrogen defect are different.
M for the comparative example 2,3 shown in the table 1 during Ti be the region of Al/ (Ti+V+Al) < 0.7, and crystallographic system becomes the NaCl type of cubic crystal.
So, in the region of Al/ (Ti+V+Al) < 0.7, the ratio resistance value at 25 DEG C is less than 100 Ω cm, and B constant is less than 1500K, for low resistance and the region of low B constant.
Comparative example 1 shown in table 1 is the region that N/ (Ti+V+Al+N) is less than 40%, and metal becomes the crystalline state of nitrogenize deficiency.This comparative example 1, neither wurtzite-type neither NaCl type, but the state of the non-constant of crystallinity.Further, known in these comparative examples, B constant and resistance value are all very little, close to metal behavior.
M for the comparative example 2 shown in the table 2 during Cr be the region of Al/ (Cr+V+Al) < 0.7, and crystallographic system becomes the NaCl type of cubic crystal.
So, in the region of Al/ (Cr+V+Al) < 0.7, the ratio resistance value at 25 DEG C is less than 100 Ω cm, and B constant is less than 1500K, for low resistance and the region of low B constant.
Comparative example 1 shown in table 2 is the region that N/ (Cr+V+Al+N) is less than 40%, and metal becomes the crystalline state of nitrogenize deficiency.This comparative example 1, neither wurtzite-type neither NaCl type, but the state of the non-constant of crystallinity.Further, known in these comparative examples, B constant and resistance value are all very little, close to metal behavior.
M for the comparative example 2 shown in the table 3 when Ti, Cr be the region of Al/ (Ti+Cr+V+Al) < 0.7, and crystallographic system becomes the NaCl type of cubic crystal.
So, in the region of Al/ (Ti+Cr+V+Al) < 0.7, the ratio resistance value at 25 DEG C is less than 100 Ω cm, and B constant is less than 1500K, for low resistance and the region of low B constant.
Comparative example 1 shown in table 3 is the region that N/ (Ti+Cr+V+Al+N) is less than 40%, and metal becomes the crystalline state of nitrogenize deficiency.This comparative example 1, neither wurtzite-type neither NaCl type, but the state of the non-constant of crystallinity.Further, known in these comparative examples, B constant and resistance value are all very little, close to metal behavior.
(4) film X-ray diffraction (qualification of crystalline phase)
By grazing incidence X-ray diffraction (GrazingIncidenceX-rayDiffraction), the thin-film thermistor portion 3 utilizing reactive sputtering method to obtain is carried out to the qualification of crystalline phase.This film X-ray diffraction is small angle x-ray diffraction (SAXD) experiment, pipe ball is set to Cu, incidence angle is set to 1 degree, and the scope in 2 θ=20 ~ 130 degree measures.For a part of sample, incidence angle is set to 0 degree, and the scope in 2 θ=20 ~ 100 degree measures.
Its result, in the region (M be in Ti, Cr one or both) of Al/ (M+V+Al) >=0.7, for wurtzite-type phase (hexagonal crystal, the phase identical with AlN), in the region of Al/ (M+V+Al) < 0.66, for NaCl type phase (cubic crystal, the phase identical with TiN, CrN, VN).Further, thinking in 0.66 < Al/ (M+V+Al) < 0.7, is the crystalline phase that wurtzite-type phase coexists mutually with NaCl type.
So in M-V-Al-N (M be in Ti, Cr one or both) is, high resistance and the region of high B constant are present in the wurtzite-type phase of Al/ (M+V+Al) >=0.7.In addition, in an embodiment of the present invention, impurity phase is not confirmed, single-phase for wurtzite-type.
In addition, the comparative example 1 shown in table 1 to table 3 is described above, and crystalline phase, neither NaCl type phase neither wurtzite-type phase, fubaritic in this test.Further, these comparative examples, due to the non-constant width of peak width of XRD, are therefore the material of the non-constant of crystallinity.This is presumably because because of electrical characteristics close to metal behavior, therefore become the Metal Phase of nitrogenize deficiency.
Then, embodiments of the invention are all the film of wurtzite-type phase, and orientation is comparatively strong, therefore use XRD investigation in the crystal axis in the direction (film thickness direction) perpendicular to Si substrate S in a axle orientation and c-axis orientation which axle orientation stronger.Now, in order to investigate the orientation of crystal axis, measure the peak intensity ratio of (100) (representing the hkl index of a axle orientation) and (002) (representing the hkl index of c-axis orientation).
Its result, being less than the embodiment of film forming under the condition of 0.7Pa at sputtering pressure is the very strong and film that c-axis orientation is stronger than a axle orientation of the intensity of compared with (100) (002).On the other hand, at sputtering pressure be more than 0.7Pa condition under the embodiment of film forming be the very strong and material that a axle orientation ratio c-axis orientation is strong of the intensity of compared with (002) (100).
In addition, even if confirm film forming under identical membrance casting condition, on polyimide film, to be formed with the single-phase of wurtzite-type similarly.Further, even if confirm under identical membrance casting condition, film forming is on polyimide film, and orientation is also constant.
One example of the XRD distribution of the embodiment that c-axis orientation is stronger shown in Figure 15 to Figure 17.The embodiment of Figure 15 is Al/ (Ti+V+Al)=0.88 (wurtzite-type, hexagonal crystal), incidence angle is set to 1 degree to measure.Further, the embodiment of Figure 16 is Al/ (Cr+V+Al)=0.95 (wurtzite-type, hexagonal crystal), incidence angle is set to 1 degree to measure.And the embodiment of Figure 17 is Al/ (Ti+Cr+V+Al)=0.85 (wurtzite-type, hexagonal crystal), incidence angle is set to 1 degree to measure.
As can be known from these results, in these embodiments, the intensity of (002) becomes very strong compared with (100).
Further, an example of the XRD distribution of the embodiment that a axle orientation is stronger shown in Figure 18 to Figure 20.The embodiment of Figure 18 is Al/ (Ti+V+Al)=0.86 (wurtzite-type, hexagonal crystal), incidence angle is set to 1 degree to measure.Further, the embodiment of Figure 19 is Al/ (Cr+V+Al)=0.89 (wurtzite-type, hexagonal crystal), incidence angle is set to 1 degree to measure.And the embodiment of Figure 20 is Al/ (Ti+Cr+V+Al)=0.83 (wurtzite-type, hexagonal crystal), incidence angle is set to 1 degree to measure.
As can be known from these results, in these embodiments, the intensity of (100) becomes very strong compared with (002).
In addition, confirm (*) in chart be from device peak value and carry the peak value of Si substrate of heat oxide film, be not the peak value of sample main body or the peak value of impurity phase.Further, incidence angle be set to 0 degree and implement symmetrical mensuration, confirming its peak value can disappear, and confirm its for from device peak value and carry the peak value of Si substrate of heat oxide film.
Then, about the embodiments of the invention as wurtzite-type material, associating between crystalline texture with electrical characteristics is compared in more detail.
As shown in Figure 21 to Figure 23, for Al/ (M+V+Al) than, namely Al/ (Ti+V+Al) than, Al/ (Cr+V+Al) than or Al/ (Ti+Cr+V+Al) than the material of close ratio, have the material perpendicular to the crystal axis that the degree of orientation in the direction of real estate is stronger to be the material of the embodiment of c-axis and described crystal axis the be embodiment of a axle.In addition, Figure 23 acceptance of the bid is painted with Al/ (Ti+Cr+V+Al) than the material being 0.75 ~ 0.85.
Relatively, if known Al/ (M+V+Al) is than roughly the same, then compared with stronger with a axle orientation material, the B constant of the material that c-axis orientation is stronger is larger.Further, if be conceived to N amount (N/ (M+V+Al+N)), then, compared with the known material stronger with a axle orientation, the nitrogen quantity of the material that c-axis orientation is stronger is slightly large.The material that stoichiometric proportion never during nitrogen defect to be 0.5 (N/ (M+V+Al+N)=0.5) material that known c-axis orientation is stronger be nitrogen defect level is less and desirable.
In addition, expression shown in Figure 24 V/ (Ti+V) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.In addition, Figure 24 acceptance of the bid is painted with Al/ (Ti+V+Al) than almost identical material.If find, Al/ (Ti+V+Al) is than identical, and V/ (Ti+V) is than identical, then, compared with stronger with a axle orientation material, the B constant of the material that c-axis orientation is stronger becomes large.
Further, expression shown in Figure 25 V/ (Cr+V) that the stronger embodiment of a axle orientation and the stronger embodiment of c-axis orientation are compared than with B constant between the chart of relation.In addition, Figure 25 acceptance of the bid is painted with Al/ (Cr+V+Al) than the material being 0.95 ~ 0.98.If known Al/ (Cr+V+Al) is than being same degree amount, and V/ (Cr+V) is than being same degree amount, then, compared with stronger with a axle orientation material, the B constant of the material that c-axis orientation is stronger is larger.
The evaluation > of < crystal habit
Then, as an example of the crystal habit represented in the cross section in thin-film thermistor portion 3, when M shown in Figure 26 is Ti, embodiment (the Al/ (Ti+V+Al)=0.88 of about film forming 440nm on the Si substrate S of band heat oxide film, wurtzite-type, hexagonal crystal, c-axis orientation is stronger) thin-film thermistor portion 3 in section S EM photo.
And, when M shown in Figure 27 is Cr, embodiment (Al/ (Cr+V+Al)=0.90, the wurtzite-type of about film forming 450nm on the Si substrate S of band heat oxide film, hexagonal crystal, c-axis orientation is stronger) thin-film thermistor portion 3 in section S EM photo.
And, when M shown in Figure 28 is Ti, Cr, embodiment (Al/ (Ti+Cr+V+Al)=0.85, the wurtzite-type of about film forming 450nm on the Si substrate S of band heat oxide film, hexagonal crystal, c-axis orientation is stronger) thin-film thermistor portion 3 in section S EM photo.
Then, when M shown in Figure 29 is Ti, the section S EM photo in the thin-film thermistor portion 3 of another embodiment (hexagonal crystal, a axle orientation is stronger for Al/ (Ti+V+Al)=0.86, wurtzite-type).
Further, when M shown in Figure 30 is Cr, the section S EM photo in the thin-film thermistor portion 3 of another embodiment (hexagonal crystal, a axle orientation is stronger for Al/ (Cr+V+Al)=0.89, wurtzite-type).
And, when M shown in Figure 32 is Ti, Cr, the section S EM photo in the thin-film thermistor portion 3 of another embodiment (hexagonal crystal, a axle orientation is stronger for Al/ (Ti+Cr+V+Al)=0.83, wurtzite-type).
The sample of these embodiments uses the sample of Si substrate S cleavage fracture.Further, for the photo of 45° angle degree oblique view.
As from these photos, any embodiment is all formed by the column crystallization of densification.That is, in the stronger embodiment of c-axis orientation and the stronger embodiment of a axle orientation, the appearance that the crystallization of column grows along the direction perpendicular to real estate is all observed.In addition, the fracture of column crystallization is producing during Si substrate S cleavage fracture.
In addition, about the size of the column crystallization in figure, in the embodiment that the c-axis orientation of Figure 26 when M is Ti is stronger, particle diameter is 10nm φ (± 5nm φ), length is about 440nm, in the embodiment that a axle orientation of Figure 29 is stronger, particle diameter is 15nm φ (± 10nm φ), and length is about 430nm.
Further, in the embodiment that the c-axis orientation of Figure 27 when M is Cr is stronger, particle diameter is 10nm φ (± 5nm φ), length is about 450nm, in the embodiment that a axle orientation of Figure 30 is stronger, particle diameter is 15nm φ (± 10nm φ), and length is about 425nm.
And in the embodiment that the c-axis orientation of Figure 28 when M is Ti, Cr is stronger, particle diameter is 10nm φ (± 5nm φ), length is about 450nm, in the embodiment that a axle orientation of Figure 31 is stronger, particle diameter is 15nm φ (± 10nm φ), and length is about 470nm.
In addition, particle diameter is now the diameter of the column crystallization in real estate, and length is the length (thickness) of the column crystallization in direction perpendicular to real estate.
If the length-width ratio of column crystallization to be defined as (length) ÷ (particle diameter), then the embodiment that c-axis orientation is stronger and stronger this two embodiment of embodiment of a axle orientation all have the larger length-width ratio of more than 10.Think that the particle diameter of column crystallization is less, film becomes fine and close thus.
In addition, confirm be with heat oxide film Si substrate S on carry out film forming with the thickness of 200nm, 500nm, 1000nm respectively time, also formed by the column crystallization of densification as described above.
< heat resistant test evaluates >
In a part for the embodiment shown in table 1 to table 3 and comparative example, in air 125 DEG C, resistance value before and after the heat resistant test of 1000h and B constant evaluate.Its result shown in table 4 to table 6.In addition, as more also evaluating the comparative example based on Ta-Al-N based material in the past.
As can be known from these results, although Al concentration and nitrogen concentration difference, but when the comparative example of Ta-Al-N system is compared with the embodiment of the B constant with same degree amount, the resistance value climbing that M-V-Al-N (M be in Ti, Cr one or both) is, B constant climbing are all less, thermal endurance when observing with the electrical property change before and after heat resistant test for M-V-Al-N (M be in Ti, Cr one or both) be that this side is more excellent.
In addition, when M is Ti, the embodiment 5,6 of table 1 is the material that c-axis orientation is stronger, and embodiment 9,10 is the material that a axle orientation is stronger.If compare both, then, compared with stronger with a axle orientation embodiment, the resistance value climbing of the embodiment that c-axis orientation is stronger is less, and thermal endurance slightly improves.
Further, when M is Cr, the embodiment 6,7 of table 2 is the material that c-axis orientation is stronger, and embodiment 9 is the material that a axle orientation is stronger.If compare both, then, compared with stronger with a axle orientation embodiment, the resistance value climbing of the embodiment that c-axis orientation is stronger is less, and thermal endurance slightly improves.
And when M is Ti, Cr, the embodiment 6 of table 3 is the material that c-axis orientation is stronger, and embodiment 10 is the material that a axle orientation is stronger.If compare both, then, compared with stronger with a axle orientation embodiment, the resistance value climbing of the embodiment that c-axis orientation is stronger is less, and thermal endurance slightly improves.
In addition, Ta-Al-N based material is very large compared with Ti, Cr, V or Al due to the ionic radius of Ta, therefore cannot make wurtzite-type phase in high concentration Al region.Think because Ta-Al-N system is not wurtzite-type phase, therefore the M-V-Al-N (M be in Ti, Cr one or both) of the wurtzite-type thermal endurance that is is better.
[table 4]
[table 5]
[table 6]
The Evaluation of Heat Tolerance > that < irradiates based on nitrogen plasma
When M is Ti, after the thin-film thermistor portion 3 of the embodiment 5 shown in his-and-hers watches 1 carries out film forming, in vacuum degree: 6.7Pa, power output: 200W and N 2under gas atmosphere, irradiate nitrogen plasma.Further, when M is Cr, after the thin-film thermistor portion 3 of the embodiment 6 shown in his-and-hers watches 2 carries out film forming, in vacuum degree: 6.7Pa, power output: 200W and N 2under gas atmosphere, irradiate nitrogen plasma.And, when M is Ti, Cr, after the thin-film thermistor portion 3 of the embodiment 6 shown in his-and-hers watches 3 carries out film forming, in vacuum degree: 6.7Pa, power output: 200W and N 2under gas atmosphere, irradiate nitrogen plasma.
Carry out the result of heat resistant test with the film evaluation element 121 implementing this nitrogen plasma and the film evaluation element 121 of not implementing this nitrogen plasma shown in table 7 to table 9.As seen from these results, in the embodiment of carrying out nitrogen plasma, the climbing of ratio resistance is less, and the thermal endurance of film is improved.This is because reduced the nitrogen defect of film by nitrogen plasma, and crystallinity is improved.In addition, as nitrogen plasma, irradiate free radical nitrogen then better.
[table 7]
[table 8]
[table 9]
So in above-mentioned evaluation, if known at N/ (M+V+Al+N): the scope of 0.4 ~ 0.5 makes, then can show good thermistor characteristic.But do not have stoichiometric proportion during nitrogen defect to be 0.5 (N/ (M+V+Al+N)=0.5), known in current test, nitrogen quantity is less than 0.5, and there is nitrogen defect in the material.Therefore, it is desirable to add the technique making up nitrogen defect, as the irradiation etc. of the preferred above-mentioned nitrogen plasma of one.
In addition, technical scope of the present invention is not limited to above-mentioned execution mode and embodiment, without departing from the scope of spirit of the present invention, and can various change in addition.
Symbol description
1-film-type thermistor (temperature) sensor, 2-insulating properties film, 3-thin-film thermistor portion, 4,124-pattern electrode.

Claims (8)

1. a thermistor metal nitride materials, it is the metal nitride materials for thermistor, it is characterized in that,
By with general formula: (M 1-wv w) xal yn zthe metal nitride represented is formed, wherein, and 0.0 < w < 1.0,0.70≤y/ (x+y)≤0.98,0.4≤z≤0.5, x+y+z=1,
The crystalline texture of described thermistor metal nitride materials is the single-phase of the wurtzite-type of hexagonal crystal system,
Described M is one or both in Ti, Cr.
2. thermistor metal nitride materials according to claim 1, is characterized in that,
Described thermistor metal nitride materials is formed as membranaceous,
And be the column crystallization extended along the direction perpendicular to the surface of described film.
3. thermistor metal nitride materials according to claim 1, is characterized in that,
Described thermistor metal nitride materials is formed as membranaceous,
On the direction on the surface perpendicular to described film, the orientation of c-axis is better than the orientation of a axle.
4. a film-type thermistor (temperature) sensor, is characterized in that, possesses:
Insulating properties film;
Thin-film thermistor portion, this insulating properties film is formed by thermistor metal nitride materials according to claim 1; And
A pair pattern electrode, is at least formed in upside or the downside in described thin-film thermistor portion.
5. film-type thermistor (temperature) sensor according to claim 4, is characterized in that,
Described M at least comprises one or both of Cr in Ti, Cr,
The part being at least engaged in described thin-film thermistor portion of described pattern electrode is formed by Cr.
6. a manufacture method for thermistor metal nitride materials, is characterized in that, it is the method for the thermistor metal nitride materials described in manufacturing claims 1,
There is the film formation process using M-V-Al alloy sputtering targets to carry out reactive sputtering and film forming in nitrogen containing atmosphere,
Described M is one or both in Ti, Cr.
7. the manufacture method of thermistor metal nitride materials according to claim 6, is characterized in that,
Sputtering pressure in described reactive sputtering is set smaller than 0.7Pa.
8. the manufacture method of thermistor metal nitride materials according to claim 6, is characterized in that,
Have after described film formation process, irradiate the operation of nitrogen plasma to formed film.
CN201480022247.1A 2013-06-05 2014-06-02 Metal nitride material for thermistors, method for producing same, and film-type thermistor sensor Pending CN105144311A (en)

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