CN105141307A - Silicon-based ring oscillator with low leakage current cantilever beam movable gates and preparation method - Google Patents
Silicon-based ring oscillator with low leakage current cantilever beam movable gates and preparation method Download PDFInfo
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- CN105141307A CN105141307A CN201510379528.9A CN201510379528A CN105141307A CN 105141307 A CN105141307 A CN 105141307A CN 201510379528 A CN201510379528 A CN 201510379528A CN 105141307 A CN105141307 A CN 105141307A
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Abstract
The invention relates to a silicon-based ring oscillator with low leakage current cantilever beam cantilever gates, which is formed by connecting three CMOS (complementary metal oxide semiconductor) phase inverters end to end, wherein each of the three CMOS phase inverter is composed of an NMOS (N-channel metal oxide semiconductor) transistor with an MEMS cantilever beam gate and a PMOS (P-channel metal oxide semiconductor) transistor with an MEMS cantilever beam gate. The ring oscillator is based on a Si substrate, grid electrodes of the NMOS transistors and the PMOS transistors are cantilever beams suspended above an oxide layer, each cantilever beam is made of Al, a pull-down electrode is arranged below each cantilever beam gate, the pull-down electrodes below the NMOS cantilever beam gates are grounded, and the pull-down electrode below the PMOS cantilever beam gates are connected to power supply voltage, an absolute value of threshold voltage of the cantilever beam gate NMOS transistor and an absolute value of threshold voltage of the cantilever beam gate PMOS transistor are designed to be equal, and pull-down voltage of the cantilever beam gates is designed to be the absolute value of the threshold voltage of the MOS transistors. The ring oscillator provided by the invention is not only simple in structure and easy to start oscillation, but also effectively reduces the gate leakage current and reduces part of the power consumption.
Description
Technical field
The present invention proposes silica-based low-leakage current cantilever beam can the ring oscillator of moving grid, belongs to the technical field of microelectromechanical systems.
Background technology
Along with the development of integrated circuit, traditional integrated circuit (IC)-components can not meet the demand that people are growing, and increasing new structure device pours in the eyes of people.In integrated circuit and some digital circuits, oscillator is a kind of very common device, in the past, people are the clock and the waveform that produce required frequency with quartz (controlled) oscillator, along with the extensive utilization of integrated circuit, instead of original quartz (controlled) oscillator with the oscillator that MOS device makes, its ring oscillator is exactly a kind of.The structure of ring oscillator is simple, be easy to make and integrated, advantage of lower cost, and easily starting of oscillation, obtain the extensive use of people, but there is the series of problems such as leakage current due to conventional MOS pipe, this makes the DC power of ring oscillator general higher, the heat condition of ring oscillator is comparatively serious, and a lot of performance also receives impact to a certain degree, and the power consumption therefore reducing ring oscillator has just become people to need one of problem solved.Along with the raising of MEMS technology, a kind of MEMS of having cantilever beam the metal-oxide-semiconductor of moving grid can effectively solve the problem of grid leakage current, it is a kind of very good selection that this MOS device is applied to ring oscillator, the present invention be exactly devise a kind of cantilever beam with very little gate leakage current on a si substrate can the ring oscillator of moving grid.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of silica-based low-leakage current cantilever beam can the ring oscillator of moving grid and preparation method, ring oscillator is end to end and form, when the work of ring oscillator by odd number CMOS phase inverter
When doing, in the ideal case, the grid current of this odd number CMOS phase inverter should be 0, but in practical situations both, because the thickness of metal-oxide-semiconductor gate oxide is very little, the great hot electron of part kinetic energy will pass gate oxide thus form grid leakage current, this grid leakage current causes the power problems of ring oscillator to become increasingly conspicuous, if power consumption is too large, even device may be damaged, and the present invention just very effectively reduces the grid leakage current in ring oscillator, thus well reduce the power consumption of ring oscillator.
Technical scheme: silica-based low-leakage current cantilever beam of the present invention can the ring oscillator of moving grid be made up of three CMOS phase inverters, their end to end formation ring-types, whole ring oscillator makes based on P type Si substrate, three CMOS phase inverters realize interconnection by lead-in wire, each CMOS phase inverter is made up of cantilever beam grid NMOS tube and cantilever beam grid PMOS again, the grid of this NMOS tube and PMOS is suspended on gate oxide, form cantilever beam grid, these cantilever beam grid are made by Al, and the polysilicon anchor district of grid is deposited on P type Si substrate, a pull-down electrode is had below cantilever beam grid, pull-down electrode wherein below NMOS cantilever beam grid is ground connection, and the pull-down electrode below POMS cantilever beam grid connects power supply, silicon nitride medium layer is coated with above pull-down electrode.
The absolute value of the threshold voltage of cantilever beam grid NMOS tube and cantilever beam grid PMOS 14 is designed to equal, and the actuation voltage of cantilever beam grid is designed to the absolute value of the threshold voltage of metal-oxide-semiconductor.Time voltage between metal-oxide-semiconductor grid and pull-down electrode is less than threshold voltage absolute value, the cantilever beam grid of suspension can not absorb, thus cause metal-oxide-semiconductor can not conducting, and also just because of this, DC leakage current obtains good suppression; Time voltage when between the grid and pull-down electrode of metal-oxide-semiconductor is greater than threshold voltage absolute value, the cantilever beam grid suspended will be adsorbed on gate oxide, and metal-oxide-semiconductor, with regard to this conducting, starts normally to work, this ring oscillator, by reducing DC leakage current, makes its DC power greatly reduce.
When there is high level on the cantilever beam grid of wherein some CMOS inverters, then the cantilever beam grid of NMOS tube are just drop-down and make its conducting, and PMOS is still in cut-off state, now this CMOS phase inverter output low level, contrary, when having low level on the cantilever beam grid of this CMOS phase inverter, then NMOS tube cut-off, PMOS conducting, phase inverter exports high level; Because three phase inverter circulations connect, the output of last phase inverter is exactly the input of a rear phase inverter, therefore just creates self-oscillation, thus looping oscillator.
The output of these three CMOS phase inverters and input join end to end formation ring-type, composition ring oscillator, during ring oscillator starting of oscillation, suppose the excitation having a high level voltage on CMOS phase inverter grid, what connect due to the pull-down electrode below the cantilever beam grid of NMOS is electronegative potential, thus the suspended grid of NMOS tube will be drop-down and be labelled on gate oxide, thus NMOS tube just starts normally work, and now the cantilever beam grid of PMOS is still in suspended state, phase inverter exports as low level; Contrary, when the voltage on grid is low level, the suspended grid of PMOS just can drop-downly be labelled on gate oxide, and PMOS is with regard to this conducting, and NMOS tube cut-off, phase inverter exports high level, before and after these three CMOS phase inverters, inter-working constantly produces self-oscillation, thus defines ring oscillator, and high level is herein the supply voltage of the threshold voltage absolute value being greater than metal-oxide-semiconductor, can be set to corresponding value as required, and namely low level is ground.
Silica-based low-leakage current cantilever beam of the present invention can the preparation method of ring oscillator of moving grid as follows:
1) P type Si substrate is prepared;
2) carry out the initial oxidation of P type Si substrate, form one deck SiO
2layer;
3) carry out photoetching, carve the figure of N trap hand-hole, for making PMOS;
4) carry out doping to N trap to inject, form N trap;
5) remove surface oxide layer, smooth silicon face is provided;
6) end oxide growth;
7) apply photoresist, remove the photoresist at pull-down electrode place;
8) deposit one deck polysilicon, its thickness is about 0.3 μm;
9) remove the polysilicon on residue photoresist and photoresist, form pull-down electrode;
10) deposited silicon nitride photoetching silicon nitride, retains the silicon nitride of silicon nitride on pulling electrode and active area;
11) field oxidation is carried out;
12) silicon nitride of basal oxygen sheet and active area is removed;
13) carry out gate oxidation, and active area is oxidized, growth layer of oxide layer;
14) apply photoresist, remove the photoresist of the anchor zone position of cantilever beam;
15) deposit one deck polysilicon, its thickness is about 0.3 μm;
16) remove the polysilicon on residue photoresist and photoresist, form polysilicon anchor district;
17) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer on a si substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam;
18) evaporation deposition Al, forms cantilever beam figure;
19) apply photoresist, retain the photoresist above cantilever beam grid;
20) anti-carve Al, form cantilever beam grid;
21) apply photoresist, make the hand-hole of boron by lithography, inject boron, form PMOS active area;
22) apply photoresist, make the hand-hole of phosphorus by lithography, inject phosphorus, form NMOS tube active area;
23) photoetching etch contact hole, lead-in wire, power and ground;
24) discharge polyimide sacrificial layer, form the cantilever beam grid suspended.
In the present invention, can see that the grid of the metal-oxide-semiconductor of looping oscillator is not attached in oxide layer intuitively, but be suspended in oxide layer, constitute cantilever beam structure, the absolute value of the threshold voltage of NMOS tube and PMOS is designed to equal, and the actuation voltage of cantilever beam grid is designed to the absolute value of the threshold voltage of metal-oxide-semiconductor.Time voltage when between metal-oxide-semiconductor grid and pull-down electrode is less than threshold voltage absolute value, the grid of suspension can not absorb, thus causes metal-oxide-semiconductor can not conducting, and the DC leakage current of such grid just effectively reduces; When the grid of metal-oxide-semiconductor and pull-down electrode voltage are greater than threshold voltage absolute value time, the grid of suspension will be adsorbed in oxide layer, and metal-oxide-semiconductor, with regard to this conducting, starts normally to work.
Beneficial effect: silica-based low-leakage current cantilever beam of the present invention can the ring oscillator of moving grid there is suspension can moving grid, not only structure is simple, and reduce the DC leakage current of grid greatly, thus the power problems of ring oscillator obtain can be very large solution, the performance of ring oscillator have also been obtained larger raising.
Accompanying drawing explanation
Fig. 1, Fig. 2 are that silica-based low-leakage current cantilever beam of the present invention can the schematic diagram of ring oscillator of moving grid,
Fig. 3 is that silica-based low-leakage current cantilever beam of the present invention can the vertical view of ring oscillator of moving grid,
Fig. 4 be the silica-based low-leakage current cantilever beam of Fig. 3 can moving grid ring oscillator P-P ' to profile,
Fig. 5 be the silica-based low-leakage current cantilever beam of Fig. 3 can moving grid ring oscillator A-A ' to profile,
Fig. 6 be the silica-based low-leakage current cantilever beam of Fig. 3 can moving grid ring oscillator B-B ' to profile.
Figure comprises: P type Si substrate 1, polysilicon anchor district 2, cantilever beam grid 3, contact hole 4, NMOS tube active area 5, PMOS active area 6, N trap 7, power line 8, ground wire 9, lead-in wire 10, gate oxide 11, pull-down electrode 12, silicon nitride medium layer 13, PMOS 14, NMOS tube 15.
Embodiment
Silica-based low-leakage current cantilever beam of the present invention can the ring oscillator of moving grid be made up of three CMOS phase inverters, their end to end formation ring-types, whole ring oscillator makes based on P type Si substrate 1, three CMOS phase inverters realize interconnection by lead-in wire 10, each CMOS phase inverter is made up of cantilever beam grid NMOS tube and cantilever beam grid PMOS again, the cantilever beam grid 3 of this NMOS tube and PMOS are suspended on gate oxide 11, and the polysilicon anchor district 2 of grid is deposited on P type Si substrate 1, a pull-down electrode 12 is had below cantilever beam grid, pull-down electrode wherein below NMOS clamped beam grid is ground connection, and the pull-down electrode below POMS clamped beam grid connects power supply, silicon nitride medium layer 13 is coated with above pull-down electrode 12.
In the present invention, the absolute value of the threshold voltage of NMOS tube 15 and PMOS 14 is designed to equal, and the actuation voltage of cantilever beam grid 3 is designed to the absolute value of the threshold voltage of metal-oxide-semiconductor.Time voltage when between metal-oxide-semiconductor grid and pull-down electrode is less than threshold voltage absolute value, the cantilever beam grid 3 of suspension can not absorb, thus cause metal-oxide-semiconductor can not conducting; Time voltage when between the grid and pull-down electrode of metal-oxide-semiconductor is greater than threshold voltage absolute value, the cantilever beam grid 3 of suspension will be adsorbed on gate oxide 11, and metal-oxide-semiconductor, with regard to this conducting, starts normally to work.
Silica-based low-leakage current cantilever beam the preparation method of ring oscillator of moving grid can comprise following step:
1) P type Si substrate 1 is prepared;
2) carry out the initial oxidation of P type Si substrate 1, form one deck SiO
2layer;
3) carry out photoetching, carve the figure of N trap 7 hand-hole, for making PMOS;
4) carry out doping to N trap 7 to inject, form N trap 7;
5) remove surface oxide layer, smooth silicon face is provided;
6) end oxide growth;
7) apply photoresist, remove the photoresist at pull-down electrode 12 place;
8) deposit one deck polysilicon, its thickness is about 0.3 μm;
9) remove the polysilicon on residue photoresist and photoresist, form pull-down electrode 12;
10) deposited silicon nitride photoetching silicon nitride, retains the silicon nitride of silicon nitride medium layer 13 on pulling electrode 12 and active area;
11) field oxidation is carried out;
12) silicon nitride of basal oxygen sheet and active area is removed;
13) carry out gate oxidation, and active area is oxidized, growth layer of oxide layer;
14) apply photoresist, remove the photoresist of the position, anchor district 2 of cantilever beam;
15) deposit one deck polysilicon, its thickness is about 0.3 μm;
16) remove the polysilicon on residue photoresist and photoresist, form polysilicon anchor district 2;
17) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer on a si substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam grid 3;
18) evaporation deposition Al, forms cantilever beam figure;
19) apply photoresist, retain the photoresist above cantilever beam grid 3;
20) anti-carve Al, form cantilever beam grid 3;
21) apply photoresist, make the hand-hole of boron by lithography, inject boron, form PMOS active area 6;
22) apply photoresist, make the hand-hole of phosphorus by lithography, inject phosphorus, form NMOS tube active area 5;
23) photoetching etch contact hole 4, lead-in wire 10, power line 8 and ground wire 9;
24) discharge polyimide sacrificial layer, form the cantilever beam grid 3 suspended;
Difference of the present invention is:
The present invention effectively can reduce the leaky in ring oscillator, and reduce ring oscillator power consumption operationally greatly, in the present invention, the grid of the metal-oxide-semiconductor of looping oscillator is not be attached in oxide layer as conventional MOS pipe, but across at oxide layer, by polysilicon anchor, district constitutes cantilever beam structure, the absolute value of the threshold voltage of cantilever beam grid NMOS tube and cantilever beam grid PMOS is designed to equal, and the actuation voltage of cantilever beam grid is designed to the absolute value of the threshold voltage of metal-oxide-semiconductor.Time voltage between metal-oxide-semiconductor grid and pull-down electrode is less than threshold voltage absolute value, the grid of suspension can not absorb, thus causes metal-oxide-semiconductor to end; Time voltage when between the grid and pull-down electrode of metal-oxide-semiconductor is greater than threshold voltage absolute value, the grid of suspension will be adsorbed in oxide layer, and metal-oxide-semiconductor is with regard to this conducting, and because DC leakage-current effectively obtains reduction, its power problems have also been obtained alleviation.
Namely the structure meeting above condition is considered as silica-based low-leakage current cantilever beam of the present invention can the ring oscillator of moving grid.
Claims (2)
1. a silica-based low-leakage current cantilever beam can the ring oscillator of moving grid, it is characterized in that what this ring oscillator was made up of three CMOS phase inverters, their end to end formation ring-types, whole ring oscillator makes based on P type Si substrate (1), three CMOS phase inverters realize interconnection by lead-in wire (10), each CMOS phase inverter is made up of cantilever beam grid NMOS tube and cantilever beam grid PMOS again, the grid of this NMOS tube and PMOS is suspended on gate oxide (11), form cantilever beam grid (3), these cantilever beam grid (3) are made by Al, and the polysilicon anchor district (2) of grid is deposited on P type Si substrate (1), a pull-down electrode (12) is had in cantilever beam grid (3) below, pull-down electrode wherein below NMOS cantilever beam grid is ground connection, and the pull-down electrode below POMS cantilever beam grid connects power supply, pull-down electrode (12) top is coated with silicon nitride medium layer (13).
2. silica-based low-leakage current cantilever beam as claimed in claim 1 can the preparation method of ring oscillator of moving grid, it is characterized in that silica-based low-leakage current cantilever beam of the present invention can the preparation method of ring oscillator of moving grid as follows:
1). prepare P type Si substrate;
2). carry out the initial oxidation of P type Si substrate, form one deck SiO
2layer;
3). carry out photoetching, carve the figure of N trap hand-hole, for making PMOS;
4). doping is carried out to N trap and injects, form N trap;
5). remove surface oxide layer, smooth silicon face is provided;
6). end oxide growth;
7). coating photoresist, remove the photoresist at pull-down electrode place;
8). deposit one deck polysilicon, its thickness is about 0.3 μm;
9). remove the polysilicon on residue photoresist and photoresist, form pull-down electrode;
10). deposited silicon nitride photoetching silicon nitride, retain the silicon nitride of silicon nitride on pulling electrode and active area;
11). carry out field oxidation;
12). remove the silicon nitride of basal oxygen sheet and active area;
13). carry out gate oxidation, and active area is oxidized, growth layer of oxide layer;
14). coating photoresist, remove the photoresist of the anchor zone position of cantilever beam;
15). deposit one deck polysilicon, its thickness is about 0.3 μm;
16). remove the polysilicon on residue photoresist and photoresist, form polysilicon anchor district;
17). deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer on a si substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below cantilever beam;
18). evaporation deposition Al, forms cantilever beam figure;
19). coating photoresist, retains the photoresist above cantilever beam grid;
20). anti-carve Al, form cantilever beam grid;
21). coating photoresist, makes the hand-hole of boron by lithography, injects boron, forms PMOS active area;
22). coating photoresist, makes the hand-hole of phosphorus by lithography, injects phosphorus, forms NMOS tube active area;
23). photoetching also etches contact hole, lead-in wire, power and ground;
24). release polyimide sacrificial layer, forms the cantilever beam grid suspended.
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| CN201510379528.9A CN105141307B (en) | 2015-07-01 | 2015-07-01 | Silicon substrate low-leakage current cantilever beam can moving grid ring oscillator and preparation method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246294B1 (en) * | 1999-02-12 | 2001-06-12 | Fujitsu Limited | Supply noise immunity low-jitter voltage-controlled oscillator design |
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735935A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method |
| CN104992939A (en) * | 2015-07-01 | 2015-10-21 | 东南大学 | Annular oscillator of nitride-based low-leakage-current cantilever beam, and preparation method |
-
2015
- 2015-07-01 CN CN201510379528.9A patent/CN105141307B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6246294B1 (en) * | 1999-02-12 | 2001-06-12 | Fujitsu Limited | Supply noise immunity low-jitter voltage-controlled oscillator design |
| CN102735933A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Micromechanical silicon-based clamped beam-based phase detector and detection method |
| CN102735935A (en) * | 2012-06-20 | 2012-10-17 | 东南大学 | Phase detector based on micro-mechanical silicon-based cantilever beam and detection method |
| CN104992939A (en) * | 2015-07-01 | 2015-10-21 | 东南大学 | Annular oscillator of nitride-based low-leakage-current cantilever beam, and preparation method |
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