CN105140196A - Efficient heat dissipation paster type packaging structure - Google Patents
Efficient heat dissipation paster type packaging structure Download PDFInfo
- Publication number
- CN105140196A CN105140196A CN201510536756.2A CN201510536756A CN105140196A CN 105140196 A CN105140196 A CN 105140196A CN 201510536756 A CN201510536756 A CN 201510536756A CN 105140196 A CN105140196 A CN 105140196A
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- CN
- China
- Prior art keywords
- heat
- heat dissipation
- radiating substrate
- paster type
- high efficiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides an efficient heat dissipation paster type packaging structure, comprising a first heat dissipation substrate, a second heat dissipation substrate and a chip, wherein the chip is provided with a collector, a source electrode and a gate electrode; the collector is in connection with the first heat dissipation substrate; the source electrode or the gate electrode is in connection with the second heat dissipation substrate. The efficient heat dissipation paster type packaging structure also comprises a supporting plate, on which the first heat dissipation substrate and the second heat dissipation substrate are arranged; and a plurality of collector pins which are in connection with the first heat dissipation substrate. The first heat dissipation substrate and the second heat dissipation substrate can timely discharge the heat initially generated by the chip, maintain the operation of the chip under the low temperature environment, and keep blocked impedance and higher power conversion efficiency; the efficient heat dissipation paster type packaging structure can maintain the operation of the chip under the low temperature environment, avoid avalanche, protect elements, and prolong the service life of the elements.
Description
Technical field
The present invention relates to power component, particularly, relate to a kind of high efficiency and heat radiation paster type encapsulation structure.
Background technology
In power component application, electric current just can produce heat by the impedance of components and parts, if this heat energy gets rid of the phenomenon that just can cause component temperature rising not in time.Component temperature raises, and impedance wherein can be made and then to increase, and then produce more heat, so go round and begin again, just easily make element produce snowslide phenomenon.A good power component encapsulation, the heat produced when must element can be operated, derives, eliminating in time.But all there is the not good situation of heat dissipation in existing power component encapsulation series.
Traditional power semiconductor component paster packaged type, no matter its paster packaging pin is two, three or many, and its design all only has collector terminal to dispel the heat.Export paster packaging pin for eight the most general ends, its encapsulation draws a design figure as shown in Figure 1 and Figure 2, the heat radiation of visible power component, is only linked to metal heat-conducting frame via collector by heat-radiating substrate and thermal conductance is gone out, to complete the heat radiation of power component.Gate terminal, source terminal then do not process especially.Through the retrieval to prior art, find that application number is 201110455882.7, name is called a kind of power device package structure of the disclosure of the invention of power device package structure, comprises a base material, one source pole layer, a grid layer, a drain electrode layer, a dielectric layer, at least one drain bonding pad, at least one source pad, at least one gate pad, at least one drain metal post, at least one source metal post and at least one gate metal post.Source layer and grid layer are arranged at a first surface of base material.Drain electrode layer is arranged at a second surface of base material.Dielectric layer covers the first surface of source layer, grid layer and base material.Drain bonding pad, source pad and gate pad are all arranged on dielectric layer, and respectively by drain metal post, source metal post, with gate metal post be connected to drain electrode layer, source layer and grid layer separately.But this invention does not arrange radiator structure, there is the situation that heat dissipation is not good.
Summary of the invention
For defect of the prior art, the object of this invention is to provide a kind of high efficiency and heat radiation paster type encapsulation structure.The change of the present invention in package design, increases its heat dissipation, and then avoids chip to produce snowslide phenomenon.
According to high efficiency and heat radiation paster type encapsulation structure provided by the invention, comprise the first heat-radiating substrate, the second heat-radiating substrate and chip;
Wherein, described chip is provided with collector, source electrode and gate; Described collector connects described first heat-radiating substrate; Described source electrode or gate connect described second heat-radiating substrate.
Preferably, also comprise supporting plate,
Wherein, described first heat-radiating substrate and described second heat-radiating substrate are arranged on described supporting plate.
Preferably, multiple collector pin is also comprised;
Wherein, described multiple collector pin connects described first heating panel.
Preferably, multiple source lead is also comprised;
Wherein, described multiple source lead connects described second heat-radiating substrate.
Preferably, several source lead are also comprised;
Wherein, described source electrode connects described second heat-radiating substrate by several source lead.
Preferably, gate pin and gate leads is also comprised;
Wherein, described gate connects described gate pin by described gate leads.
Preferably, source electrode connecting plate is also comprised;
Wherein, adjacent source lead is connected by source electrode connecting plate.
Preferably, metal heat-conducting frame is also comprised;
Wherein, described in described first heat-radiating substrate, the second heat-radiating substrate connects a metal heat-conducting frame respectively.
Compared with prior art, the present invention has following beneficial effect:
1, the present invention is provided with the first heat-radiating substrate and the heat that chip initially produces can be got rid of by the second heat-radiating substrate in time, keeps chip to run at low temperature environment, maintains its blocked impedance and higher power supply conversion efficiency;
2, the present invention can maintain chip and avoids snowslide phenomenon to reach effect of protection component in cold operation, the useful life of extension element;
3, the present invention can get rid of heat energy in time, and product can operated compared with in the environment of large-temperature range; Stable chip impedance can produce good reliability;
4, the present invention can be applied to multi-chip package, but source electrode heat conduction is planned inside paster package design by the present invention in advance, jointly encapsulate with other chips, need not bracing wire or carry out twice encapsulation separately afterwards, to fall apart coefficient difference because of heat to avoid encapsulating material, cause phenomenon of expanding with heat and contract with cold inconsistent, producing broken string, chap, the integrity problem such as electric leakage.
Accompanying drawing explanation
By reading the detailed description done non-limiting example with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the circuit diagram of power semiconductor component paster encapsulating structure in prior art;
Fig. 2 is the structural representation of power semiconductor component paster encapsulating structure in prior art;
Fig. 3 is structural representation of the present invention.
In figure:
1 is chip;
2 is the first heat-radiating substrate;
3 is source electrode;
4 is gate;
5 is supporting plate;
6 is source lead;
7 is gate pin;
8 is gate leads;
9 is source lead;
10 is collector pin;
11 is the second heat-radiating substrate;
12 is source electrode connecting plate.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in detail.Following examples will contribute to those skilled in the art and understand the present invention further, but not limit the present invention in any form.It should be pointed out that to those skilled in the art, without departing from the inventive concept of the premise, some distortion and improvement can also be made.These all belong to protection scope of the present invention.
In the present embodiment, high efficiency and heat radiation paster type encapsulation structure provided by the invention, comprises the first heat-radiating substrate 2, second heat-radiating substrate 11 and chip 1; Wherein, described chip 1 is provided with collector, source electrode 3 and gate 4; Described collector connects described first heat-radiating substrate 2; Described source electrode 3 or gate 4 connect described second heat-radiating substrate 11.
High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises supporting plate 5, and wherein, described first heat-radiating substrate 2 and described second heat-radiating substrate 11 are arranged on described supporting plate 5.High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises multiple collector pin 10; Wherein, described multiple collector pin 10 connects described first heating panel.In the present embodiment, described supporting plate 5 can adopt black glue to substitute.
High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises multiple source lead 6; Wherein, described multiple source lead 6 connects described second heat-radiating substrate 11.High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises several source lead 9; Wherein, described source electrode 3 connects described second heat-radiating substrate 11 by several source lead 9.High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises gate pin 7 and gate leads 8; Wherein, described gate connects described gate pin 7 by described gate leads 8.
High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises source electrode connecting plate 12; Wherein, adjacent source lead 6 is connected by source electrode connecting plate 12.High efficiency and heat radiation paster type encapsulation structure provided by the invention, also comprises source electrode connecting plate 12; Wherein, adjacent source lead 6 is connected by source electrode connecting plate 12.High efficiency and heat radiation paster type encapsulation structure provided by the invention also comprises metal heat-conducting frame; Wherein, described in described first heat-radiating substrate, the second heat-radiating substrate connects a metal heat-conducting frame respectively.In the present embodiment, described source electrode connecting plate 12, first heat-radiating substrate 2 and the second heat-radiating substrate 11 adopt identical material to make.
Chip 1 temperature raises the impedance made wherein and and then rises, and electric energy just can become the loss of heat energy, and then Power convert benefit is reduced, and damages power chip 1, makes it become energy consuming components.Be provided with two pieces of heat-radiating substrates in the present invention, small one and large one, the first heat-radiating substrate 2 support chip 1 is linked to collector and maintains its original heat radiation function.Second heat-radiating substrate 11 makes the heat energy of chip 1 surface metal and PN junction (PN-junction) generation when chip 1 operates through deriving fast and effectively from here for linking source electrode 3, to reach the target that power component does not heat up, holding power element impedance is constant, avoids snowslide phenomenon to produce.
The present invention can be applied to multi-chip 1 and encapsulate, source electrode 3 heat conduction is planned inside paster package design by the present invention in advance, jointly encapsulate with other chips 1, need not bracing wire or carry out twice encapsulation separately afterwards, to fall apart coefficient difference because of heat to avoid encapsulating material, cause phenomenon of expanding with heat and contract with cold inconsistent, producing broken string, chap, the integrity problem such as electric leakage.
Above specific embodiments of the invention are described.It is to be appreciated that the present invention is not limited to above-mentioned particular implementation, those skilled in the art can make various distortion or amendment within the scope of the claims, and this does not affect flesh and blood of the present invention.
Claims (8)
1. a high efficiency and heat radiation paster type encapsulation structure, is characterized in that, comprises the first heat-radiating substrate, the second heat-radiating substrate and chip;
Wherein, described chip is provided with collector, source electrode and gate; Described collector connects described first heat-radiating substrate; Described source electrode or gate connect described second heat-radiating substrate.
2. high efficiency and heat radiation paster type encapsulation structure according to claim 1, is characterized in that, also comprise supporting plate,
Wherein, described first heat-radiating substrate and described second heat-radiating substrate are arranged on described supporting plate.
3. high efficiency and heat radiation paster type encapsulation structure according to claim 1, is characterized in that, also comprises multiple collector pin;
Wherein, described multiple collector pin connects described first heating panel.
4. high efficiency and heat radiation paster type encapsulation structure according to claim 1, is characterized in that, also comprise multiple source lead;
Wherein, described multiple source lead connects described second heat-radiating substrate.
5. high efficiency and heat radiation paster type encapsulation structure according to claim 1, is characterized in that, also comprise several source lead;
Wherein, described source electrode connects described second heat-radiating substrate by several source lead.
6. high efficiency and heat radiation paster type encapsulation structure according to claim 1, is characterized in that, also comprise gate pin and gate leads;
Wherein, described gate connects described gate pin by described gate leads.
7. high efficiency and heat radiation paster type encapsulation structure according to claim 4, is characterized in that, also comprise source electrode connecting plate;
Wherein, adjacent source lead is connected by source electrode connecting plate.
8. high efficiency and heat radiation paster type encapsulation structure according to claim 1, is characterized in that, also comprise metal heat-conducting frame;
Wherein, described in described first heat-radiating substrate, the second heat-radiating substrate connects a metal heat-conducting frame respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510536756.2A CN105140196A (en) | 2015-08-27 | 2015-08-27 | Efficient heat dissipation paster type packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510536756.2A CN105140196A (en) | 2015-08-27 | 2015-08-27 | Efficient heat dissipation paster type packaging structure |
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| Publication Number | Publication Date |
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| CN105140196A true CN105140196A (en) | 2015-12-09 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510536756.2A Pending CN105140196A (en) | 2015-08-27 | 2015-08-27 | Efficient heat dissipation paster type packaging structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298703A (en) * | 2016-09-12 | 2017-01-04 | 武汉晶亮电子科技有限公司 | That can improve heat dissipation fills mosfet package structure soon |
| TWI755319B (en) * | 2020-12-30 | 2022-02-11 | 立錡科技股份有限公司 | Chip packaging structure |
Citations (5)
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|---|---|---|---|---|
| CN1304171A (en) * | 1999-11-19 | 2001-07-18 | 华瑞股份有限公司 | Lead bracket design of high power semiconductor in plastic packaged product |
| JP2002314018A (en) * | 2001-04-18 | 2002-10-25 | Toshiba Corp | Semiconductor device and its manufacturing method |
| WO2006014690A2 (en) * | 2004-07-20 | 2006-02-09 | Alpha & Omega Semiconductor Ltd. | Power semiconductor package |
| CN101593776A (en) * | 2008-05-31 | 2009-12-02 | 万国半导体股份有限公司 | The self-protection structure and the method for power device with voltage range of expansion |
| CN101673802A (en) * | 2009-09-27 | 2010-03-17 | 上海大学 | Integrated metal matrix aluminium nitride film substrate, high-power LED module of heat pipe and manufacturing method thereof |
-
2015
- 2015-08-27 CN CN201510536756.2A patent/CN105140196A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304171A (en) * | 1999-11-19 | 2001-07-18 | 华瑞股份有限公司 | Lead bracket design of high power semiconductor in plastic packaged product |
| JP2002314018A (en) * | 2001-04-18 | 2002-10-25 | Toshiba Corp | Semiconductor device and its manufacturing method |
| WO2006014690A2 (en) * | 2004-07-20 | 2006-02-09 | Alpha & Omega Semiconductor Ltd. | Power semiconductor package |
| CN101593776A (en) * | 2008-05-31 | 2009-12-02 | 万国半导体股份有限公司 | The self-protection structure and the method for power device with voltage range of expansion |
| CN101673802A (en) * | 2009-09-27 | 2010-03-17 | 上海大学 | Integrated metal matrix aluminium nitride film substrate, high-power LED module of heat pipe and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106298703A (en) * | 2016-09-12 | 2017-01-04 | 武汉晶亮电子科技有限公司 | That can improve heat dissipation fills mosfet package structure soon |
| TWI755319B (en) * | 2020-12-30 | 2022-02-11 | 立錡科技股份有限公司 | Chip packaging structure |
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Address after: 361028, No. 9 East Xinle Road, Haicang District, Fujian, Xiamen Applicant after: Xiamen core bright Electronic Technology Co., Ltd. Address before: 200233 102B room 83, building 700, Yishan Road, Shanghai, Xuhui District, China Applicant before: SHANGHAI JINGLIANG ELECTRONIC TECHNOLOGY CO., LTD. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151209 |