CN105140151B - A kind of test structure and method for repairing TFT panel array T-shaped defect - Google Patents
A kind of test structure and method for repairing TFT panel array T-shaped defect Download PDFInfo
- Publication number
- CN105140151B CN105140151B CN201510613298.8A CN201510613298A CN105140151B CN 105140151 B CN105140151 B CN 105140151B CN 201510613298 A CN201510613298 A CN 201510613298A CN 105140151 B CN105140151 B CN 105140151B
- Authority
- CN
- China
- Prior art keywords
- panel array
- tft panel
- crystalline silicon
- test structure
- shaped defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Measurement Of Radiation (AREA)
Abstract
The present invention provides a kind of test structure and method for repairing TFT panel array T-shaped defect, including:Support member and connector;The support member includes support platform and cushion and support column in the support platform;Non-crystalline silicon tft panel array to be repaired is carried on the cushion, the non-crystalline silicon tft panel array has first surface and second surface, and the first surface is formed with scintillator layers, and the scintillator layers are physically contacted with the cushion;The connector includes flexible PCB and signal processing circuit board, and the signal processing circuit board is supported by the support column.The present invention in support platform by setting support member, recycle flexible PCB and signal processing circuit board, non-crystalline silicon tft panel array is set to be inverted in support platform, so as to which back surface incident of the laser from non-crystalline silicon tft panel array will be allow, find and isolate reparation damaged pixels point, it can so avoid doing over again, lift product qualification rate, it is ensured that the quality of product.
Description
Technical field
The present invention relates to medical detection field, more particularly to a kind of test structure for repairing TFT panel array T-shaped defect
And method.
Background technology
Since First flat panel detector (Flat Panel Detector) equipment being released from nineteen ninety-five RSNA, with
In recent years flat board Detection Techniques take off, in the research and development and production process of flat panel detector, flat board Detection Techniques
Directly or indirectly two class can be divided into.Indirect FPD structure is mainly added by scintillator or luminescent coating to be made with photodiode
Amorphous silicon layer (amorphous Silicon, a-Si) adds thin film semiconductor's array (Thin Film Transistor again
Array, TFT) constitute.
The imaging process of non-crystalline silicon X-ray flat panel detector needs experience " X-ray " to arrive " visible ray ", then " charge pattern
Picture " arrives the imaging transfer process of " digital picture ", is that a kind of X ray image using amorphous silicon photodiodes array as core is visited
Survey device.X-ray photon is converted to visible ray by the scintillator or luminescent coating of detector under x-ray bombardment, then by with
The amorphous silicon array of photodiode effect is changed into electric image signal, is integrated and read and A/D conversion by peripheral circuit, so as to obtain
Obtain digitized image.Amorphous silicon flat-panel detectors have image taking speed fast, good space and density resolution, high s/n ratio,
The remarkable advantages such as Direct Digital output.
But, in the production process of non-crystalline silicon tft panel array, some impurity can be introduced, cause respective pixel point because
For short circuit, puncture, leak electricity, cause the gray value saturation of the pixel, and influence the pixel of surrounding, finally on the entire image
Form a "T"-shaped defect of capitalization.For this defect, current repair mode be from non-crystalline silicon tft panel array just
The pixel access is got through with laser in face, so as to isolate the pixel, it is not influenceed the pixel around other.
Except impurity can be introduced when producing non-crystalline silicon tft panel array, to the positive attached of non-crystalline silicon tft panel array
In the technical process for one layer of scintillator, T-shape defect also occurs, because front has covered scintillator, it is difficult to separate,
Laser is blocked by scintillator, it is impossible to can not pass through scintillator from front, therefore, the T-shaped defect now formed can not be from non-crystalline silicon
Repaired in the front of TFT panel array.
Therefore it provides the test structure and method of a kind of new reparation TFT panel array T-shaped defect are people in the art
Member needs the problem solved.
The content of the invention
The shortcoming of prior art, TFT panel array T-shaped is repaired it is an object of the invention to provide one kind in view of the above
The test structure and method of defect, make after scintillator for solving TFT panel array front in the prior art, it is impossible to from front
The problem of repairing T-shaped defect.
In order to achieve the above objects and other related objects, the present invention provides a kind of survey for repairing TFT panel array T-shaped defect
Structure is tried, the test structure at least includes:Support member and connector;
The support member includes support platform and cushion and support column in the support platform;
Non-crystalline silicon tft panel array to be repaired is carried on the cushion, the non-crystalline silicon tft panel array has
First surface and second surface, the first surface are formed with scintillator layers, and the scintillator layers connect with the cushion physics
Touch;
The connector include the flexible PCB that is electrically connected with the non-crystalline silicon tft panel array and with the flexible electrical
The signal processing circuit board that road plate is electrically connected, the signal processing circuit board is supported by the support column.
A kind of scheme of optimization of the test structure of TFT panel array T-shaped defect, the support column are repaired as the present invention
It is welded in the support platform or is threadedly secured in the support platform.
A kind of scheme of optimization of the test structure of TFT panel array T-shaped defect, the support column are repaired as the present invention
For aluminum metal.
Repaired as the present invention at a kind of scheme of optimization of the test structure of TFT panel array T-shaped defect, the signal
Connector is provided with reason circuit board, the flexible PCB is electrically connected by the connector and signal processing circuit board.
A kind of scheme of optimization of the test structure of TFT panel array T-shaped defect, the cushion are repaired as the present invention
For silicagel pad.
A kind of scheme of optimization of the test structure of TFT panel array T-shaped defect, the non-crystalline silicon are repaired as the present invention
Upward, the second surface is covered with transparency carrier for the second surface of TFT panel array.
A kind of scheme of optimization of the test structure of TFT panel array T-shaped defect, the scintillator are repaired as the present invention
Layer is GOS or CsI.
The present invention also provides a kind of method for repairing TFT panel array T-shaped defect, and methods described includes:By the amorphous
Silicon TFT panel array is inverted in the buffer-layer surface in support platform, and signal processing circuit board, laser are supported with the support column
Second surface from the non-crystalline silicon tft panel array is incident, isolates defect pixel point.
A kind of scheme of optimization of the method for TFT panel array T-shaped defect, the signal transacting electricity are repaired as the present invention
Road plate is installed for reverse buckling type, and is supported by the support column.
A kind of scheme of optimization of the method for TFT panel array T-shaped defect is repaired as the present invention, the laser is through thoroughly
Bright substrate, is incided up to the defect pixel point on non-crystalline silicon tft panel array from the second surface.
As described above, the present invention repairs the test structure and method of TFT panel array T-shaped defect, the test structure is extremely
Include less:Support member and connector;The support member include support platform and cushion in the support platform and
Support column;Non-crystalline silicon tft panel array to be repaired is carried on the cushion, the non-crystalline silicon tft panel array has
First surface and second surface, the first surface are formed with scintillator layers, and the scintillator layers connect with the cushion physics
Touch;The connector includes the flexible PCB being electrically connected with the non-crystalline silicon tft panel array and electric with the flexible PCB
Signal processing circuit board even, the signal processing circuit board is supported by the support column.The present invention is by support platform
Upper setting support member, recycles flexible PCB and signal processing circuit board, non-crystalline silicon tft panel array is inverted in branch
Support on platform, so that back surface incident of the laser from non-crystalline silicon tft panel array will be allow, find and isolate reparation damaged pixels
Point.
Brief description of the drawings
Fig. 1 can not repair the schematic diagram of TFT panel array T-shaped defect for the test structure of prior art.
Fig. 2 is the test structure schematic diagram for repairing TFT panel array T-shaped defect of the invention.
Component label instructions
1 support platform
2 cushions
3 scintillators
4 non-crystalline silicon tft panel arrays
41 first surfaces
42 second surfaces
5 support columns
6 circuit boards
61 connectors
7 flexible PCBs
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to accompanying drawing.It should be noted that the diagram provided in the present embodiment only illustrates the present invention in a schematic way
Basic conception, then in schema only display with relevant component in the present invention rather than according to component count during actual implement, shape
Shape and size are drawn, and it is actual when implementing kenel, quantity and the ratio of each component can be a kind of random change, and its component cloth
Office's kenel may also be increasingly complex.
In the prior art, non-crystalline silicon tft panel array is typically face-up placed to the reparation for carrying out defect pixel electricity.Such as
Fruit non-crystalline silicon tft panel array front does not form scintillator layers, then this modes of emplacement can be smoothed out repairing for pixel
Multiple operation, but if the surface of the non-crystalline silicon tft panel array has formed scintillator layers, then this modes of emplacement then can
Laser repairing can not be carried out due to blocking for scintillator.As shown in figure 1, laser is blocked, nothing from positive incident by scintillator 3
Method reaches the defect pixel point on non-crystalline silicon tft panel array 4.
In view of this, the present invention provides a kind of test structure and method for repairing TFT panel array T-shaped defect, and existing
Technology is compared, and the present invention adds structural support posts in support platform, using the switching circuit board and connector specially designed,
Make the non-crystalline silicon tft panel array back-off in support platform, so that laser light incident enters non-crystalline silicon tft panel array
The back side, can smoothly pick and isolate impaired pixel.
The test structure of reparation TFT panel array T-shaped defect of the invention described in detail below and the principle of method and
Embodiment, makes those skilled in the art not need creative work to be appreciated that the reparation TFT panel array T-shaped of the present invention lacks
Sunken test structure and method.
The present invention provides a kind of test structure for repairing TFT panel array, as shown in Fig. 2 the test structure is at least wrapped
Include:Support member and connector.
The support member includes support platform 1 and cushion 2 and support column 5 in the support platform 1.
The cushion 2 is used to carry non-crystalline silicon tft panel array 4 to be repaired.The cushion 2 can be silicagel pad
Etc. the part of flexible pooling feature.When carrying out recovery test, the cushion 2 can prevent non-crystalline silicon tft panel battle array
Row 4 and scintillator 3 are scratched and gone to sticks and staves.
The support column 5 is arranged on the surrounding of the cushion 2, for supporting the connector, is easy to non-crystalline silicon tft face
Plate array 4 is inverted.The support column 5 can be metallic aluminum material or other any suitable backing materials, herein not
It is restricted.The shape of the cross section of the support column 5 can be circle, triangle, polygon etc., not limit herein.The branch
Dagger 5 can be welded in the support platform 1 in a welding manner, can also be threadedly secured to the support platform 1
On, fixed form is not limited herein.
There is first surface 41 (front) and second surface 42 (back side), described the in the non-crystalline silicon tft panel array 4
One surface 41 is formed with scintillator layers 3, and the scintillator layers 3 are physically contacted with the cushion 2.That is, described non-crystalline silicon tft face
The face down of plate array 4, is placed in support platform 1.The scintillator layers 3 are the conventional scintillator material such as GOS or CsI.
The second surface 42 (back side) of the non-crystalline silicon tft panel array 4 upward, covered with transparency carrier (do not give by surface
To illustrate).The transparency carrier can pass through laser, and therefore, the transparency carrier does not stop laser light incident, does not also interfere with sharp
Light reparation is operated.
The connector include the flexible PCB 7 that is electrically connected with the non-crystalline silicon tft panel array 4 and with the flexibility
The signal processing circuit board 6 that circuit board 7 is electrically connected, the signal processing circuit board 6 is supported by the support column 5.
The image element circuit of the flexible PCB 7 and the non-crystalline silicon tft panel array 4 is electrically connected, for drawing non-crystalline silicon
The circuit signal of TFT panel array 4.The flexible PCB 7 can be bent, and electronic component is arranged on flexible PCB with material
On 7, it can cause electronic circuit has can bend or crimp the characteristic in arbitrary shape.
Connector 61 is provided with the signal processing circuit board 6, the signal processing circuit board 6 passes through the connector
61 are electrically connected with the flexible PCB 7.There is signal processing module on the signal processing circuit board 6, signal can be gathered, and
It is connected with computer.The circuit signal collected is transferred to computer by the signal processing circuit board 6, and technical staff is directly in computer
On see the pixel image of the non-crystalline silicon tft panel array 4.
The present invention also provides a kind of method that TFT panel array T-shaped defect is repaired using above-mentioned test structure, the side
Method includes:
First, support column 5 is installed in the support platform 1;
Then, the non-crystalline silicon tft panel array 4 is inverted in the surface of cushion 2 in support platform, and by the letter
Number back-off of process circuit plate 6, connector 61 down, the signal processing circuit board 6 is supported with the support column 5, and access has T-shaped
The passage of defect;
Then, it is powered, adopts figure, determine the position of T-shaped defect;
Then, laser is opened, as shown in Fig. 2 making laser pass through after transparency carrier from the non-crystalline silicon tft panel array 4
Second surface 42 (back side) incide up to defect pixel point, defect pixel point is repaired in isolation, and online real-time confirmation repairs feelings
Condition and repairing effect.
Finally, reparation terminates, power-off, removes whole panel.
In summary, the present invention provides a kind of present invention and provides the test structure for repairing TFT panel array T-shaped defect and side
Method, including:Support member and connector;The support member include support platform and cushion in the support platform and
Support column;Non-crystalline silicon tft panel array to be repaired is carried on the cushion, the non-crystalline silicon tft panel array has
First surface and second surface, the first surface are formed with scintillator layers, and the scintillator layers connect with the cushion physics
Touch;The connector includes the flexible PCB being electrically connected with the non-crystalline silicon tft panel array and electric with the flexible PCB
Signal processing circuit board even, the signal processing circuit board is supported by the support column.The present invention is by support platform
Upper setting support member, recycles flexible PCB and signal processing circuit board, non-crystalline silicon tft panel array is inverted in branch
Support on platform, so that back surface incident of the laser from non-crystalline silicon tft panel array will be allow, find and isolate reparation damaged pixels
Point, can so avoid doing over again, and lift product qualification rate, it is ensured that the quality of product.
So, the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of test structure for repairing TFT panel array T-shaped defect, it is characterised in that the test structure at least includes:Branch
Support member and connector;
The support member includes support platform and cushion and support column in the support platform;
Non-crystalline silicon tft panel array to be repaired is carried on the cushion, the non-crystalline silicon tft panel array has first
Surface and second surface, the first surface are formed with scintillator layers, and the scintillator layers are physically contacted with the cushion;
The connector include the flexible PCB that is electrically connected with the non-crystalline silicon tft panel array and with the flexible PCB
The signal processing circuit board being electrically connected, the signal processing circuit board is supported by the support column.
2. the test structure according to claim 1 for repairing TFT panel array T-shaped defect, it is characterised in that:The support
Post is welded in the support platform or is threadedly secured in the support platform.
3. the test structure according to claim 1 for repairing TFT panel array T-shaped defect, it is characterised in that:The support
Post is aluminum metal.
4. the test structure according to claim 1 for repairing TFT panel array T-shaped defect, it is characterised in that:The signal
Connector is provided with process circuit plate, the flexible PCB is electrically connected by the connector and signal processing circuit board.
5. the test structure according to claim 1 for repairing TFT panel array T-shaped defect, it is characterised in that:The buffering
Layer is silicagel pad.
6. the test structure according to claim 1 for repairing TFT panel array T-shaped defect, it is characterised in that:The amorphous
Upward, the second surface is covered with transparency carrier for the second surface of silicon TFT panel array.
7. the test structure according to claim 1 for repairing TFT panel array T-shaped defect, it is characterised in that:The flicker
Body layer is GOS or CsI.
8. a kind of test structure using as described in any one of claim 1~7 repairs the side of TFT panel array T-shaped defect
Method, it is characterised in that methods described includes:The non-crystalline silicon tft panel array is inverted in the cushion table in support platform
Face, signal processing circuit board is supported with the support column, and the second surface of laser from the non-crystalline silicon tft panel array is incident,
Isolate defect pixel point.
9. the method according to claim 8 for repairing TFT panel array T-shaped defect, it is characterised in that:The signal transacting
Circuit board is installed for reverse buckling type, and is supported by the support column.
10. the method according to claim 8 for repairing TFT panel array T-shaped defect, it is characterised in that:The laser is worn
Transparency carrier is crossed, is incided from the second surface up to the defect pixel point on non-crystalline silicon tft panel array.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201520743690.XU CN205028885U (en) | 2015-09-24 | 2015-09-24 | Restore test structure of TFT panel array T shape defect |
CN201510613298.8A CN105140151B (en) | 2015-09-24 | 2015-09-24 | A kind of test structure and method for repairing TFT panel array T-shaped defect |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510613298.8A CN105140151B (en) | 2015-09-24 | 2015-09-24 | A kind of test structure and method for repairing TFT panel array T-shaped defect |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105140151A CN105140151A (en) | 2015-12-09 |
CN105140151B true CN105140151B (en) | 2017-09-29 |
Family
ID=54725453
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510613298.8A Active CN105140151B (en) | 2015-09-24 | 2015-09-24 | A kind of test structure and method for repairing TFT panel array T-shaped defect |
CN201520743690.XU Withdrawn - After Issue CN205028885U (en) | 2015-09-24 | 2015-09-24 | Restore test structure of TFT panel array T shape defect |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201520743690.XU Withdrawn - After Issue CN205028885U (en) | 2015-09-24 | 2015-09-24 | Restore test structure of TFT panel array T shape defect |
Country Status (1)
Country | Link |
---|---|
CN (2) | CN105140151B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105140151B (en) * | 2015-09-24 | 2017-09-29 | 上海奕瑞光电子科技有限公司 | A kind of test structure and method for repairing TFT panel array T-shaped defect |
CN114486951B (en) * | 2022-02-09 | 2023-11-21 | 上海烁泰科技有限公司 | TFT panel testing system and method for X-ray detector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006337184A (en) * | 2005-06-02 | 2006-12-14 | Canon Inc | Radiation detector |
CN201004141Y (en) * | 2006-09-29 | 2008-01-09 | 上海广电光电子有限公司 | TFT array base plate for LCD with repair structure |
JP2008215951A (en) * | 2007-03-01 | 2008-09-18 | Toshiba Corp | Radiation detector |
CN102623401A (en) * | 2012-04-10 | 2012-08-01 | 上海大学 | Repairing and manufacturing process of pixel points of TFT (Thin Film Transistor) array substrate |
CN105140151B (en) * | 2015-09-24 | 2017-09-29 | 上海奕瑞光电子科技有限公司 | A kind of test structure and method for repairing TFT panel array T-shaped defect |
-
2015
- 2015-09-24 CN CN201510613298.8A patent/CN105140151B/en active Active
- 2015-09-24 CN CN201520743690.XU patent/CN205028885U/en not_active Withdrawn - After Issue
Also Published As
Publication number | Publication date |
---|---|
CN105140151A (en) | 2015-12-09 |
CN205028885U (en) | 2016-02-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
NL2018083B1 (en) | Active pixel radiation detector array and use thereof | |
CN103380366B (en) | Defect inspection method, defect inspection apparatus, and method for manufacturing substrate | |
CN107799539A (en) | A kind of photodetection structure and preparation method thereof | |
US10283557B2 (en) | Radiation detector assembly | |
CN106231210B (en) | A kind of radioscopic image sensor and the method for eliminating afterimage of image | |
US11195874B2 (en) | Detach and reattach of a flexible polyimide based X-ray detector | |
WO2017018363A1 (en) | Radiation measuring device and radiation measuring method | |
JP6670313B2 (en) | X-ray detector assembly | |
CN105140151B (en) | A kind of test structure and method for repairing TFT panel array T-shaped defect | |
US20190361133A1 (en) | Photoelectric detection structure and preparation method thereof | |
KR20180015024A (en) | Apparatus and method for testing of touch electrode of on-cell touch organic light-emitting display panel | |
CN110264929B (en) | Display panel, display device and detection method | |
US10686003B2 (en) | Radiation detector assembly | |
CN108387949A (en) | Flexible dual-energy detector module and detector and detecting devices based on it | |
CN106252371B (en) | A kind of radioscopic image sensor and the method for correcting image interference | |
CN105021626A (en) | Ball placement detection equipment and application thereof | |
CN106308834A (en) | X-ray image sensor and method for eliminating ghost image by X-ray image sensor | |
CN108110014A (en) | Radioscopic image sensor, flat panel detector and its image exposure acquisition method | |
US11411041B2 (en) | Flexible substrate module and fabrication method | |
CN106129078B (en) | A kind of radioscopic image sensor and its method for correcting image interference | |
CN110612605B (en) | Digital radiography image sensor | |
CN106206637B (en) | A kind of radioscopic image sensor and the method for correcting image interference | |
CN207868225U (en) | Amorphous silicon photodiodes module | |
CN106299013A (en) | Photodiode and preparation method, X-ray detection substrate | |
CN107478664A (en) | Line style dual-energy x-ray sensor and line style dual-energy x-ray detecting system |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Patentee after: Shanghai Yi Ruiguang electronic Polytron Technologies Inc Address before: 201201 Shanghai City, Pudong New Area Zhangjiang hi tech Industrial District Ruiqinglu No. 590 9 2 storey 202 room Patentee before: Shanghai Yirui Optoelectronics Technology Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder |