CN105140109B - Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure - Google Patents
Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure Download PDFInfo
- Publication number
- CN105140109B CN105140109B CN201510435960.5A CN201510435960A CN105140109B CN 105140109 B CN105140109 B CN 105140109B CN 201510435960 A CN201510435960 A CN 201510435960A CN 105140109 B CN105140109 B CN 105140109B
- Authority
- CN
- China
- Prior art keywords
- offset plate
- photoetching offset
- bargraphs
- peacekeeping
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure, including：First step, one-dimensional pattern is designed on the first mask plate, design the first bargraphs of X-Y scheme；Second step, the protection figure of one-dimensional pattern and the second bargraphs of X-Y scheme are designed on the second mask plate；Third step, the coating and baking of photoresist are carried out on the silicon chip that need to form a peacekeeping two dimension photoetching offset plate figure；Four steps, first time exposure is carried out to the silicon chip after third step with the first mask plate；5th step, second is carried out to the silicon chip after four steps with the second mask plate and is exposed；6th step, silylation processing is carried out to the silicon chip after the 5th step with silanizing agent, forms silylation figure layer；7th step, using silylation figure layer as mask layer, dry etching is carried out to the silicon chip after the 6th step of completion, the photoresist that silicon alkyl reaction will not occur removes, and forms a required peacekeeping two dimension photoetching offset plate figure.
Description
Technical field
The present invention relates to the photoetching process in field of semiconductor manufacture, more particularly to semiconductor fabrication process, more specifically
Say, the present invention relates to a kind of method for forming a peacekeeping two dimension photoetching offset plate figure simultaneously in integrated circuit fabrication process.
Background technology
In some special process of integrated circuit fabrication process simultaneously, it is desirable to formed in a photoetching process one-dimensional
Lines/wire casing (Line/Space) figure (as shown in Figure 1a 100/101) and two dimension square hole figure it is (square or rectangular
Shape hole) (200 as shown in Figure 1 b and 201) or block pattern (square or rectangular block) (300 Hes as illustrated in figure 1 c
301), common practice is exactly on one piece of mask plate while designs one-dimensional lines and square hole/block pattern of two dimension, is passed through
Obtained after single exposure and development.
But because bargraphs and square hole/block pattern have the feature of a peacekeeping X-Y scheme respectively, it is in space
Difference on image and optical diffraction characteristic so that OPC (the Optical Proximity required for both figures
Correction：Optics closes on amendment) model, exposure parameter (NA/Sigma：Numerical aperture/coherence factor), photoresist species
All made a big difference Deng etching condition.Therefore, with a photoetching be difficult to meet simultaneously lines and square hole/block pattern will
Ask.For example, when the various conditions of photoetching are the optimum conditions needed for bargraphs, it becomes possible to obtain one-dimensional bargraphs
Preferable resolution ratio and process window, but the square hole graphics performance (graphics resolution and fidelity) of two dimension is then poor.Even if
When the various conditions of photoetching are the optimum conditions needed for square hole/block pattern, but due to exposure when X-Y scheme in XY two
The interaction in individual direction so that luminous intensity and optical model at 4 angles and other regions it is different, cause space shadow
Image distortion, therefore the photoetching offset plate figure fidelity ultimately formed is also poor.Fig. 2 is exactly two-dimensional square hole pattern on mask plate through one
Photoetching offset plate figure is obtained after secondary exposure imaging, it is evident that original to wish that obtaining slot figure becomes ellipse.
For this problem, the method for industry generally use is come to square hole/block pattern by special OPC methods at present
It is modified, such as：As shown in figure 3, by 4 angles of square hole figure 200 add supplement block 400 (Serif) method come
The resolution ratio and process window of square hole figure are improved, this method has following shortcoming：(1) the supplement block of addition is easily to week
Other figures on side have an impact, and the accuracy for causing OPC is not too high, or even figure adhesion phenomenon occurs；(2) for difference
Square hole/block pattern, it is necessary to add various sizes of supplement block, complex disposal process, while can also increase the system of mask plate
Make difficulty；(3) this method does not have the two dimensional character for changing square hole/block pattern, and the optimum condition needed for its photoetching is still
Had any different with one-dimensional bargraphs, therefore this method is to the resolution ratio of square hole/block pattern and fidelity and process window
Improvement it is very limited.
The content of the invention
The technical problems to be solved by the invention are to be directed to have drawbacks described above in the prior art, there is provided one kind can collect
The method for forming a peacekeeping two dimension photoetching offset plate figure simultaneously into circuit manufacturing process, wherein this method can not only form one simultaneously
The photoetching offset plate figure of peacekeeping two dimension, and and can solves square hole/block pattern two-dimentional in conventional method and can not obtained preferably
The problem of graphics resolution and fidelity and process window.
In order to realize above-mentioned technical purpose, according to the present invention, side that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure
Method, wherein described two-dimentional photoetching offset plate figure is by being superimposed the one-dimensional bargraphs on two pieces of mask plates respectively after exposure again
Obtained successively by silylation and photoresist etching.
Preferably, method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure includes：
First step：One-dimensional pattern is designed on the first mask plate, and designs the first bargraphs of X-Y scheme；
Second step：The protection figure of one-dimensional pattern and the second lines figure of X-Y scheme are designed on the second mask plate
Shape；
Third step：The coating and baking of photoresist are carried out on the silicon chip that need to form a peacekeeping two dimension photoetching offset plate figure；
Four steps：First is carried out to the silicon chip after completing third step with designed first mask plate of first step
Secondary exposure；
5th step：Second is carried out to the silicon chip after completing four steps with designed second mask plate of second step
Secondary exposure；
6th step：Silylation processing is carried out to the silicon chip after completing the 5th step with silanizing agent, forms silane
Base figure layer；
7th step：Using silylation figure layer as mask layer, dry etching is carried out to the silicon chip after the 6th step of completion,
The photoresist that silicon alkyl reaction does not occur is removed, forms a required peacekeeping two dimension photoetching offset plate figure.
Preferably, in the first step, the one-dimensional pattern is corresponding with required one-dimensional photoetching offset plate figure.
Preferably, the width a1 of the first bargraphs of the X-Y scheme depends on required two-dimentional photoetching offset plate figure
First length of side x, the length b1 of first bargraphs are more than 4 times of the width a1 of first bargraphs, and described the
The length b1 of one bargraphs is more than n times of the second length of side y of required two-dimentional photoetching offset plate figure, and wherein n is putting for mask plate
Big multiplying power, namely need to meet：b1>4*a1 and b1>n*y.
Preferably, in the second step, the protection figure of the one-dimensional pattern is a light tight region, and this is light tight
The one-dimensional pattern designed in first step can be completely covered in the size in region.
Preferably, the width a2 of the second bargraphs of the X-Y scheme depends on required two-dimentional photoetching offset plate figure
Second length of side y, the length b2 of second bargraphs are more than 4 times of the width a2 of second bargraphs, and described the
The length b2 of two bargraphs is more than n times of the first length of side x of two-dimentional photoetching offset plate figure, and wherein n is the enlargement ratio of mask plate,
Namely need to meet：b2>4*a2 and b2>n*x.
Preferably, second lines designed in first bargraphs and second step that are designed in first step
Figure is mutually perpendicular on space projection.
Preferably, in third step, if required two-dimentional photoetching offset plate figure is square hole or/and slot,
Described photoresist is the first photoresist, first photoresist not hydroxyl and carboxylic acid based component before exposure, it is exposed after energy
Generate hydroxyl or/and carboxylic acid based component；If required two-dimentional photoetching offset plate figure is square block or/and rectangular blocks, institute
The photoresist stated is the second photoresist, second photoresist hydroxyl and carboxylic acid based component before exposure, it is exposed after hydroxyl or/
Disappeared with carboxylic acid based component because reaction is crosslinked.
Preferably, in the 6th step, described silanizing agent can be HMDS, the silicon nitrogen of tetramethyl two
One kind in alkane, dimethyl silyl methylamine or N, N- lignocaine trimethyl silane.
Preferably, one-dimensional photoetching offset plate figure includes lines and wire casing；Two-dimentional photoetching offset plate figure includes square hole, rectangle
Hole, square block and rectangular blocks.
Preferably, by adjusting the width of the first bargraphs of X-Y scheme on the first mask plate, different sizes are obtained
The length of side of two-dimentional photoetching offset plate figure first, by adjust the second mask plate on X-Y scheme the second bargraphs width, obtain
Obtain the various sizes of two-dimentional length of side of photoetching offset plate figure second.
Brief description of the drawings
With reference to accompanying drawing, and by reference to following detailed description, it will more easily have more complete understanding to the present invention
And be more easily understood its with the advantages of and feature, wherein：
Fig. 1 a are one-dimensional photoetching offset plate figure schematic diagrames.
Fig. 1 b are a kind of schematic diagrames of example of two-dimentional photoetching offset plate figure (square hole or/and slot).
Fig. 1 c are the schematic diagrames of another example of two-dimentional photoetching offset plate figure (square block or/and rectangular blocks).
Fig. 2 is that two-dimensional square hole pattern obtains photoetching offset plate figure after single exposure develops.
Fig. 3 is that the optics for the square hole figure addition supplement block that prior art uses closes on amendment schematic diagram.
Fig. 4 schematically shows according to the preferred embodiment of the invention while one peacekeeping two dimension photoetching offset plate figure of formation
The flow chart of method.
The domain schematic diagram of the first mask plate after the completion of the step of Fig. 5 a are the inventive method one.
The domain schematic diagram of the second mask plate after the completion of the step of Fig. 5 b are the inventive method two.
Photoresist latent image schematic diagram after the completion of the step of Fig. 5 c are the inventive method four；Fig. 5 d are the steps of the inventive method
Photoresist latent image schematic diagram after the completion of rapid five.
Silylation pictorial diagram after the completion of the step of Fig. 5 e and Fig. 5 f are the inventive method six.
One-dimensional photoresist bargraphs and two-dimentional photoresist square hole figure after the completion of the step of Fig. 5 g are the inventive method seven
Shape schematic diagram.
One-dimensional photoresist wire casing figure and two-dimentional photoresist block diagram after the completion of the step of Fig. 5 h are the inventive method seven
Shape schematic diagram.
Fig. 6 is the chemical equation for the silicon alkyl reaction that the embodiment of the present invention uses.
Description of reference numerals is as follows in figure：
One-dimensional photoresist bargraphs needed for 100-；One-dimensional wire casing photoetching offset plate figure needed for 101-；Needed for 200-
Two-dimensional rectangular hole photoetching offset plate figure；Two-dimension square shape hole photoetching offset plate figure needed for 201-；Two-dimensional rectangular needed for 300-
Block photoetching offset plate figure；Two-dimension square shape block photoetching offset plate figure needed for 301-；First side of the two-dimentional photoetching offset plate figure needed for x-
It is long；Second length of side of the two-dimentional photoetching offset plate figure needed for y-；Supplement block in 400- traditional handicrafts；On the mask plates of 110- first
One-dimensional pattern；First bargraphs of the X-Y scheme on the mask plates of 210- first；One-dimensional pattern on the mask plates of 120- first
Protection figure；Second bargraphs of the X-Y scheme on the mask plates of 220- second；One-dimensional pattern is latent in 100a- photoresists
Shadow；The latent image of first bargraphs of X-Y scheme in 210a- photoresists；Second lines of X-Y scheme in 220a- photoresists
The latent image of figure；The latent image of X-Y scheme in 201a- photoresists；500- unexposed areas；The silicon of 100b and 101b- one-dimensional patterns
It is alkylated figure；The silylation figure of 201b and 301b- X-Y schemes；Silicon alkyl reaction region occurs for 510-；520- is not
Generation silicon alkyl reaction region；The width of first bargraphs of the X-Y scheme on the mask plates of a1- first；B1- first is covered
The length of first bargraphs of the X-Y scheme in film version；Second bargraphs of the X-Y scheme on the mask plates of a2- second
Width；The length of second bargraphs of the X-Y scheme on the mask plates of b2- second.
It should be noted that accompanying drawing is used to illustrate the present invention, it is not intended to limit the present invention.Pay attention to, represent that the accompanying drawing of structure can
It can be not necessarily drawn to scale.Also, in accompanying drawing, same or similar element indicates same or similar label.
Embodiment
In order that present disclosure is more clear and understandable, with reference to specific embodiments and the drawings in the present invention
Appearance is described in detail.
Fig. 4 schematically shows according to the preferred embodiment of the invention while one peacekeeping two dimension photoetching offset plate figure of formation
The flow chart of method.Wherein, specifically, for example, one-dimensional photoetching offset plate figure includes lines and wire casing；Two-dimentional photoetching offset plate figure includes
Square hole, slot, square block and rectangular blocks.
Unlike the prior art, the method that a peacekeeping two dimension photoetching offset plate figure is formed while according to the present invention
In, the two-dimentional photoetching offset plate figure is by being passed through successively again after the one-dimensional bargraphs on two pieces of mask plates to be superimposed to exposure respectively
Cross silylation and photoresist etches what is obtained.
Particularly preferred embodiment of the invention is described below in conjunction with Fig. 4.
As shown in figure 4, method bag that is according to the preferred embodiment of the invention while forming a peacekeeping two dimension photoetching offset plate figure
Include：
First step S1：One-dimensional pattern 110 is designed on the first mask plate, and designs the first lines figure of X-Y scheme
Shape 210, as shown in Figure 5 a；
Specifically, in first step S1, the one-dimensional pattern and required (that is, will be formed) one-dimensional photoresist figure
Shape is corresponding；And the width a1 of the first bargraphs of the X-Y scheme depends on the of required two-dimentional photoetching offset plate figure
One length of side x, the length b1 of first bargraphs are more than 4 times of the width a1 of first bargraphs, and described first
The length b1 of bargraphs be more than required two-dimentional photoetching offset plate figure the second length of side y n times (wherein n for mask plate amplification
Multiplying power), namely need to meet：b1>4*a1 and b1>n*y.
Moreover, the type (being lines or wire casing) of the one-dimensional pattern 110 depends on required one-dimensional photoetching offset plate figure
Type (being lines 100 or wire casing 101) and subsequent third step S3 in photoresist type (be the first photoresist or
Second photoresist).
Second step S2：Protect figure 120 and X-Y scheme the second of one-dimensional pattern is designed on the second mask plate
Bargraphs 220, as shown in Figure 5 b；
Specifically, in second step S2, the protection figure 120 of the one-dimensional pattern is a light tight region, and should
The one-dimensional pattern designed in first step S1, the second bargraphs of the X-Y scheme will can be completely covered in the size in region
220 width a2 depends on the second length of side y of required two-dimentional photoetching offset plate figure, and the length b2 of second bargraphs is more than
4 times of the width a2 of second bargraphs, and the length b2 of second bargraphs is more than two-dimentional photoetching offset plate figure
First length of side x n times (wherein n is the enlargement ratio of mask plate), namely need to meet：b2>4*a2 and b2>n*x.
Moreover, designed in first bargraphs 210 and second step S2 that are designed in first step S1 described
Two bargraphs 220 are mutually perpendicular on space projection.
Third step S3：The coating and baking of photoresist are carried out on the silicon chip that need to form a peacekeeping two dimension photoetching offset plate figure
It is roasting；Specifically, for example, in third step S3, if required two-dimentional photoetching offset plate figure is square hole or/and slot,
Then described photoresist is the first photoresist, the photoresist not hydroxyl (- OH) and carboxylic acid group (- COOH) composition before exposure,
Hydroxyl or/and carboxylic acid based component can be generated after exposed.If required two-dimentional photoetching offset plate figure is square block or/and rectangular
Shape block, then described photoresist is the second photoresist, the photoresist hydroxyl and carboxylic acid based component before exposure, it is exposed after hydroxyl
Base or/and carboxylic acid based component disappear because reaction is crosslinked..
Four steps S4：The silicon chip after completing third step S3 is entered with designed first mask plates of first step S1
Row exposes for the first time；As shown in Figure 5 c, formed respectively in the photoresist after exposure on silicon chip one-dimensional pattern latent image 100a and
The latent image 210a of first bargraphs of X-Y scheme.
5th step S5：The silicon chip after completing four steps S4 is entered with designed second mask plates of second step S2
Second of exposure of row；
Due to being designed with the protection figure 120 of one-dimensional pattern on the second mask plate, therefore when exposing for second, first
The latent image 100a regions of the one-dimensional pattern formed during secondary exposure will not be exposed, and X-Y scheme the first bargraphs it is latent
Shadow 210a region, then have subregion and be exposed, the two dimension that the 220a shown in its dotted line is formed when being exactly second of exposure
The latent image of second bargraphs of figure, but due to being double exposure superposition, cause the latent image 210a and the of the first bargraphs
The latent image 220a of two bargraphs can be also superimposed, and because the latent image 210a of the first bargraphs and the second bargraphs it is latent
Shadow 220a is mutually perpendicular to, therefore the latent image 201a of new X-Y scheme will be formed after being superimposed, and the latent image of the X-Y scheme
201a is not exposed, and other regions are all exposed.It follows that pass through the two of four steps S4 and the 5th step S5 successively
The latent image 100a of the one-dimensional pattern shown in Fig. 5 d and diving for X-Y scheme will be formed after secondary exposure, in the photoresist on silicon chip
Black region is the region not being exposed in shadow 201a, Fig. 5 d, and white portion 500 is exactly the region being exposed, if the 3rd
Step S3 uses the first photoresist, then no exposure black region (the latent image 201a for including X-Y scheme) do not contain hydroxyl or/
With carboxylic acid based component, and expose white portion 500 because exposure and generate hydroxyl or/and carboxylic acid based component, if the 3rd
Step S3 uses the second photoresist, then no the black region (the latent image 201a for including X-Y scheme) of exposure containing hydroxyl or/and
Carboxylic acid based component, and the white portion 500 exposed is not because contain hydroxyl or/and carboxylic acid based component there occurs cross-linking reaction.
6th step S6：Silylation processing is carried out to the silicon chip after completing the 5th step S5 with silanizing agent, formed
Silylation figure layer；
In the 6th step S6, described silanizing agent can be HMDS (HMDS), the silicon nitrogen of tetramethyl two
One kind in alkane (TMDS), dimethyl silyl methylamine (DMSDMA) or N, N- lignocaine trimethyl silane (TMSDEA),
Preferably, the silanizing agent used in the present embodiment is HMDS (HMDS).
Described silylation processing be exactly by the 5th step S5 obtained with the latent image 100a of one-dimensional pattern and two
The latent image 201a of figure photoresist is tieed up in liquid or gaseous silanizing agent, makes the hydroxyl or/and carboxylic in photoresist
Silicon alkyl reaction occurs for acidic group and silylating reagent, forms silylation figure, chemical equation is as shown in fig. 6, excellent
Selection of land, its reaction temperature are 50-150 DEG C, and the reaction time is the 30-300 seconds.
If third step S3 uses the first photoresist, after carrying out above-mentioned silylation processing, as depicted in fig. 5e, grey area
Domain 510 because containing hydroxyl or/and carboxylic acid group and there occurs silicon alkyl reaction, and black region because not hydroxyl or/and
Carboxylic acid based component is without occurring silicon alkyl reaction, so as to be formed the silylation figure 100b of one-dimensional pattern and two dimension
The silylation figure 201b of figure.If third step S3 uses the second photoresist, after carrying out above-mentioned silylation processing, such as
Shown in Fig. 5 f, gray area because containing hydroxyl or/and carboxylic acid group and there occurs silicon alkyl reaction, and black region 520 because
Be not hydroxyl or/and carboxylic acid based component without silicon alkyl reaction occurs, so as to be formed the silylation of one-dimensional pattern
Change the silylation figure 301b of figure 101b and X-Y scheme.
7th step S7：Using silylation figure layer as mask layer, dry method is carried out to the silicon chip after the 6th step S6 of completion
Etching, the photoresist that silicon alkyl reaction does not occur is removed, forms a required peacekeeping two dimension photoetching offset plate figure.
For example, in the 7th step S7, the dry etching is the plasma dry using oxygen as main etching gas
Etching, its oxygen flow are the cc/min of 50-2000 standard state, and source radio-frequency power is 100-1500 watts, gas pressure
Power is 20-2000 millitorrs.The silylation figure layer that 6th step S6 is formed, in the plasma using oxygen as main etching gas
In body dry etching, there is higher etching selection ratio to the photoresist that silylation does not occur, therefore can be used as described dry
The photoresist of silylation does not occur to etch for the mask layer of method etching.If third step S3 uses the first photoresist, carry out
After above-mentioned dry etching, as shown in fig. 5g, the photoresist of gray area because the protection of its surface silicon alkylation figure layer and by
Leave, and the photoresist of white portion is completely removed because of the protection of no silylation figure layer, so as to form one
Tie up photoetching offset plate figure 100 (lines) and two-dimentional photoetching offset plate figure 201 (square hole).Similarly, if third step S3 uses the second light
Photoresist, carry out that one-dimensional photoetching offset plate figure 101 (wire casing) and two-dimentional light as shown in figure 5h will be formed after above-mentioned dry etching
Photoresist figure 301 (square).In Fig. 5 g and 5h, x and y are respectively the first and second sides of two-dimentional photoetching offset plate figure 201 or 301
It is long, by adjusting the width a1 of the first bargraphs 210 of X-Y scheme on the first mask plate, various sizes of the can be obtained
One length of side x, by adjusting the width a2 of the second bargraphs 220 of X-Y scheme on the second mask plate, different chis can be obtained
The second very little length of side y.
In the present invention, can be obtained by the width a1 of the first bargraphs of X-Y scheme on the first mask plate of regulation
Various sizes of two-dimentional first length of side of photoetching offset plate figure x, and can be by adjusting the of X-Y scheme on the second mask plate
The width a2 of two bargraphs, obtain various sizes of two-dimentional second length of side of photoetching offset plate figure y.
Thus, the present invention obtains the photoetching offset plate figure of peacekeeping two dimension simultaneously by double exposing and once developing, and
And by the way that two kinds of one-dimensional bargraphs are superimposed into exposure respectively to form X-Y scheme, eliminate X-Y scheme in conventional method
The mutual shadow of orthogonal first direction (X-direction) on silicon chip and the figure in second direction (Y-direction) during single exposure
Ring, good graphics resolution and fidelity and process window can be obtained, eliminated in conventional method specifically for X-Y scheme
The complicated and special OPC step of shape, simplify the manufacture craft of mask plate；In addition, the present invention uses anisotropic dry method
Etch to etch photoresist, eliminate when wet development removes photoresist in conventional method caused by isotropic nature
Horizontal proliferation effect, improve the control accuracy and anti-aliasing degree of critical size；Moreover, the present invention only need to be by simply adjusting
Various sizes of two-dimentional photoetching offset plate figure can be obtained by saving the width of one-dimensional bargraphs.
Furthermore, it is necessary to explanation, unless stated otherwise or is pointed out, the otherwise term in specification " first ", " the
Two ", the description such as " 3rd " is used only for distinguishing each component in specification, element, step etc., each without being intended to indicate that
Logical relation or ordinal relation between component, element, step etc..
It is understood that although the present invention is disclosed as above with preferred embodiment, but above-described embodiment and it is not used to
Limit the present invention.For any those skilled in the art, without departing from the scope of the technical proposal of the invention,
Many possible changes and modifications are all made to technical solution of the present invention using the technology contents of the disclosure above, or are revised as
With the equivalent embodiment of change.Therefore, every content without departing from technical solution of the present invention, the technical spirit pair according to the present invention
Any simple modifications, equivalents, and modifications made for any of the above embodiments, still fall within the scope of technical solution of the present invention protection
It is interior.
Claims (9)
1. method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that described two-dimentional photoetching offset plate figure
It is to be carved successively by silylation and photoresist again by being superimposed the one-dimensional bargraphs on two pieces of mask plates respectively after exposure
Lose and obtain；
The method of a peacekeeping two dimension photoetching offset plate figure is formed while described to be included：
First step：One-dimensional pattern is designed on the first mask plate, and designs the first bargraphs of X-Y scheme；
Second step：The protection figure of one-dimensional pattern and the second bargraphs of X-Y scheme are designed on the second mask plate；
Third step：The coating and baking of photoresist are carried out on the silicon chip that need to form a peacekeeping two dimension photoetching offset plate figure；
Four steps：First time exposure is carried out to the silicon chip after completing third step with first step designed first mask plate
Light；
5th step：Second is carried out with designed second mask plate of second step to the silicon chip after completing four steps to expose
Light；
6th step：Silylation processing is carried out to the silicon chip after completing the 5th step with silanizing agent, forms silylation
Figure layer；
7th step：Using silylation figure layer as mask layer, dry etching is carried out to the silicon chip after the 6th step of completion, will not
The photoresist that silicon alkyl reaction occurs removes, and forms a required peacekeeping two dimension photoetching offset plate figure.
2. method that is according to claim 1 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that first
In step, the one-dimensional pattern is corresponding with required one-dimensional photoetching offset plate figure.
3. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that described two
The width a1 for tieing up the first bargraphs of figure depends on the first length of side x of required two-dimentional photoetching offset plate figure, the First Line
The length b1 of bar figure is more than 4 times of the width a1 of first bargraphs, and the length b1 of first bargraphs is big
In n times of the second length of side y of required two-dimentional photoetching offset plate figure, wherein n is the enlargement ratio of mask plate, namely needs to meet：
B1 ＞ 4*a1 and b1 ＞ n*y.
4. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that second
In step, the protection figure of the one-dimensional pattern is a light tight region, and the size of the light tight region can be completely covered
The one-dimensional pattern designed in first step.
5. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that described two
The width a2 for tieing up the second bargraphs of figure depends on the second length of side y of required two-dimentional photoetching offset plate figure, second line
The length b2 of bar figure is more than 4 times of the width a2 of second bargraphs, and the length b2 of second bargraphs is big
In n times of the first length of side x of two-dimentional photoetching offset plate figure, wherein n is the enlargement ratio of mask plate, namely needs to meet：B2 ＞ 4*
A2 and b2 ＞ n*x.
6. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that the first step
Second bargraphs designed in rapid in first bargraphs and second step of design is mutual on space projection
Vertically.
7. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that the 3rd step
In rapid, if required two-dimentional photoetching offset plate figure is square hole or/and slot, described photoresist is the first photoetching
Glue, first photoresist not hydroxyl and carboxylic acid based component before exposure, can be generated after exposed hydroxyl or/and carboxylic acid group into
Point；If required two-dimentional photoetching offset plate figure is square block or/and rectangular blocks, described photoresist is the second photoetching
Glue, second photoresist hydroxyl and carboxylic acid based component before exposure, it is exposed after hydroxyl or/and carboxylic acid based component because occurring
Cross-linking reaction and disappear.
8. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that the 6th
In step, described silanizing agent can be HMDS, tetramethyl-disilazane, dimethyl silyl methylamine or
One kind in N, N- lignocaine trimethyl silane.
9. method that is according to claim 2 while forming a peacekeeping two dimension photoetching offset plate figure, it is characterised in that pass through tune
The width of the first bargraphs of X-Y scheme on the first mask plate is saved, obtains the various sizes of two-dimentional side of photoetching offset plate figure first
It is long, by adjusting the width of the second bargraphs of X-Y scheme on the second mask plate, obtain various sizes of two-dimentional photoresist
The length of side of figure second.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510435960.5A CN105140109B (en) | 2015-07-22 | 2015-07-22 | Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510435960.5A CN105140109B (en) | 2015-07-22 | 2015-07-22 | Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105140109A CN105140109A (en) | 2015-12-09 |
| CN105140109B true CN105140109B (en) | 2018-03-06 |
Family
ID=54725415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510435960.5A Active CN105140109B (en) | 2015-07-22 | 2015-07-22 | Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105140109B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860030B (en) * | 2019-03-29 | 2021-08-10 | 上海华力集成电路制造有限公司 | Self-aligned double patterning method |
| CN115719701A (en) * | 2022-12-07 | 2023-02-28 | 西安奕斯伟材料科技有限公司 | Silicon wafer processing method and device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6238850B1 (en) * | 1999-08-23 | 2001-05-29 | International Business Machines Corp. | Method of forming sharp corners in a photoresist layer |
| CN1924701A (en) * | 2005-09-02 | 2007-03-07 | 联华电子股份有限公司 | Method for forming photoinduced resist pattern |
| CN102830588A (en) * | 2012-09-19 | 2012-12-19 | 上海华力微电子有限公司 | Method for fabricating phase-shift photomask |
| CN102841499A (en) * | 2012-09-19 | 2012-12-26 | 上海华力微电子有限公司 | Phase-shift photomask fabrication method |
| CN102866574A (en) * | 2012-10-12 | 2013-01-09 | 上海华力微电子有限公司 | Phase-shift photo-mask manufacturing method |
| CN102866575A (en) * | 2012-10-12 | 2013-01-09 | 上海华力微电子有限公司 | Manufacture method of phase-shift optical mask |
-
2015
- 2015-07-22 CN CN201510435960.5A patent/CN105140109B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6238850B1 (en) * | 1999-08-23 | 2001-05-29 | International Business Machines Corp. | Method of forming sharp corners in a photoresist layer |
| CN1924701A (en) * | 2005-09-02 | 2007-03-07 | 联华电子股份有限公司 | Method for forming photoinduced resist pattern |
| CN102830588A (en) * | 2012-09-19 | 2012-12-19 | 上海华力微电子有限公司 | Method for fabricating phase-shift photomask |
| CN102841499A (en) * | 2012-09-19 | 2012-12-26 | 上海华力微电子有限公司 | Phase-shift photomask fabrication method |
| CN102866574A (en) * | 2012-10-12 | 2013-01-09 | 上海华力微电子有限公司 | Phase-shift photo-mask manufacturing method |
| CN102866575A (en) * | 2012-10-12 | 2013-01-09 | 上海华力微电子有限公司 | Manufacture method of phase-shift optical mask |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105140109A (en) | 2015-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11645443B2 (en) | Method of modeling a mask by taking into account of mask pattern edge interaction | |
| US10466586B2 (en) | Method of modeling a mask having patterns with arbitrary angles | |
| TW201447476A (en) | Mask pattern generating method, recording medium, and information processing apparatus | |
| CN105159031A (en) | Method for fabricating relation curve of thicknesses and critical sizes of photoresists | |
| CN100561340C (en) | The method of optical close correction | |
| CN107799402A (en) | The forming method of secondary figure | |
| CN105140109B (en) | Method that is a kind of while forming a peacekeeping two dimension photoetching offset plate figure | |
| JP2008153447A (en) | Simulation method and system, and modifying method of mask pattern | |
| US9651855B2 (en) | Methods for optical proximity correction in the design and fabrication of integrated circuits using extreme ultraviolet lithography | |
| US8551677B2 (en) | Lithographic CD correction by second exposure | |
| TWI722454B (en) | Method and system for improving critical dimension uniformity | |
| CN113495424A (en) | Optical proximity correction method and manufacturing method of mask | |
| US4610948A (en) | Electron beam peripheral patterning of integrated circuits | |
| CN114114826A (en) | Target pattern correction method and mask manufacturing method | |
| CN104977803B (en) | A method of being formed simultaneously a peacekeeping two dimension photoetching offset plate figure | |
| US8383299B2 (en) | Double patterning mask set and method of forming thereof | |
| CN101458444B (en) | Method for producing photo mask and graphic method | |
| JP2009008885A (en) | Density distribution mask | |
| KR20140096750A (en) | Exposing method and method of forming a pattern using the exposing method | |
| JP2001324794A (en) | Photomask pattern data forming method and photomask | |
| US20230408928A1 (en) | Automated metrology method for large devices | |
| JP3047111B2 (en) | Mask pattern forming method | |
| KR20070092549A (en) | Method for introducing assist pattern in mask | |
| TW202436992A (en) | Method and device for generating pattern density data | |
| CN118011724A (en) | Gray mask and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |