CN105140106A - Method for realizing silicon carbide epitaxy on zero-deflection substrate - Google Patents
Method for realizing silicon carbide epitaxy on zero-deflection substrate Download PDFInfo
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- CN105140106A CN105140106A CN201510490653.7A CN201510490653A CN105140106A CN 105140106 A CN105140106 A CN 105140106A CN 201510490653 A CN201510490653 A CN 201510490653A CN 105140106 A CN105140106 A CN 105140106A
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The invention discloses a method for realizing silicon carbide epitaxy on a zero-deflection substrate, comprising: step 1, taking a zero-deflection substrate and cleaning the zero-deflection substrate; step 2, forming an epitaxial silicon layer on the zero-deflection substrate; step 3, raising temperature to melt the silicon layer to form a melted silicon layer; step 4, pumping carbon source to convert the melted silicon layer into a silicon carbide layer; step 5, judging whether the silicon carbide layer reaches the needing thickness or not, if not, repeating to execute the steps 2-4; if so, executing a step 6; and step 6, corroding off the silicon layer which is not converted into the silicon carbide layer, and keeping the complete silicon carbide. According to the method, the silicon carbide epitaxial surface is immersed by liquid silicon, and the system temperature is raised to improve the solubility of the carbon source in the liquid silicon, and homoepitaxy growth on the zero-deflection carbon source substrate is performed by a liquid phase epitaxial growth method, so that shortcomings of phase domains, crystal boundaries and the like in the epitaxial layer an be prevented, the epitaxial quality is improved, and the method has obvious advantages.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to a kind of method of epitaxial silicon carbide on zero drift angle substrate, can be used for eliminating the defect such as phase domain, crystal boundary in silicon carbide epitaxial layers, improve epitaxial loayer quality.
Background technology
Carborundum (4H-SiC, 6H-SiC) be a kind of semiconductor material with wide forbidden band, its band gap length can reach 3.0 ~ 3.2eV, it is 3 times of Si, therefore, it has high critical breakdown electric field (10 times of Si), the features such as high carrier saturated concentration (2 times of Si), in addition, it also has the feature of high heat conductance (3 times of Si), therefore, it is at military and high temperature that is space industry, high frequency, high-power electric and electronic, photoelectric device aspect has superior using value, and be expected to be applied to the inefficient occasion of existing silica-based high power device, one of key foundation material becoming power electronic semiconductor of future generation.
Although silicon carbide epitaxial growth technology relative maturity, but in the upper outside time delay of zero drift angle substrate, due to " step current control " growth mechanism specific to the substrate of drift angle can not be utilized, cause producing the defects such as many phase domains, crystal boundary in epitaxial loayer, thus reduce the quality of epitaxial material.As shown in Figure 1, zero drift angle silicon carbide substrate surface does not have micro-step, and during method grown epitaxial layer by chemical vapour deposition (CVD), SiC molecule can not rely on this low energy barrier place of " step " kinking nucleation, but at whole epitaxial surface random nucleation.Each nucleus is grown up separately, finally when they are enough large and adjacent nucleus merge, now can leave the microstructure such as phase domain, crystal boundary.Concerning whole epitaxial loayer, this is a class defect, causes material quality in defect area to decline, greatly have impact on follow-up device performance.
There is limited evidence currently of has people to study how to eliminate above-mentioned defect, and general way is the drift angle substrate adopting band certain angle, utilizes step current control grow, reduction defect concentration.
Summary of the invention
(1) technical problem that will solve
In order to solve the problem, the invention provides a kind of method of epitaxial silicon carbide on zero drift angle substrate, to eliminate the defect such as phase domain, crystal boundary in zero drift angle substrate upper epitaxial layer, reach the object improving epitaxial loayer quality.
(2) technical scheme
For achieving the above object, the invention provides a kind of method of epitaxial silicon carbide on zero drift angle substrate, the method comprises: step 1: get one zero drift angle substrates and clean; Step 2: at zero drift angle substrate silicon epitaxial layers; Step 3: raised temperature makes silicon layer melt and forms melting silicon layer; Step 4: pass into carbon source, makes molten silicon layer change become silicon carbide layer; Step 5: judge whether silicon carbide layer reaches desired thickness, if do not reached, then repeated execution of steps 2 ~ step 4; If reached, then perform step 6; Step 6: eroded by the silicon layer not being transformed into silicon carbide layer, leaves complete carborundum.
In such scheme, zero drift angle substrate described in step 1 is 4H-SiC substrate, 6H-SiC substrate or Sapphire Substrate.
In such scheme, zero drift angle substrate described in step 1, its epitaxial surface indices of crystallographic plane be (0001) or
In such scheme, at zero drift angle substrate silicon epitaxial layers described in step 2, concrete technology condition is: pass into silicon source SiH
4temperature be 800 DEG C ~ 1350 DEG C, SiH
4hydrogen is adopted to be carrier gas and diluent gas, wherein SiH
4flow is 1 ~ 10sccm, and hydrogen flowing quantity is 1 ~ 10slm, and the extension duration is 1 ~ 5 minute, and pressure is 1 ~ 40Torr.
In such scheme, raised temperature described in step 3 makes silicon layer melt and forms melting silicon layer, concrete technology condition is: temperature is elevated to 1450 DEG C ~ 1550 DEG C, be incubated 10 ~ 30 minutes under an argon, argon flow amount used is 1 ~ 5slm, and pressure used is 500 ~ 760Torr, and substrate is rotated, rotating speed is 1-10 rev/min, and silicon layer is melted, and makes outer surface smooth.
In such scheme, carbon source is passed into described in step 4, molten silicon layer change is made to become silicon carbide layer, concrete technology condition is: keep substrate to rotate, rotating speed is 1-10 rev/min, and argon gas is switched to hydrogen, hydrogen flowing quantity used is 1 ~ 5slm, pressure used is 10 ~ 760Torr, and temperature is 1550 DEG C ~ 1850 DEG C, passes into carbon source C
2h
4or C
3h
8, flow is 100 ~ 500sccm, and the duration is 10 ~ 100 minutes.
In such scheme, described in step 6, the silicon layer not being transformed into silicon carbide layer is eroded, concrete technology condition is: keep substrate to rotate, rotating speed is 1-10 rev/min, and hydrogen flowing quantity used is 1 ~ 5slm, and pressure used is 10 ~ 760Torr, temperature is 1550 DEG C ~ 1850 DEG C, pass into HCl gas, flow is 100 ~ 500sccm, and the duration is 10 ~ 100 minutes.
In such scheme, eroded by the silicon layer not being transformed into silicon carbide layer described in step 6, concrete technology condition is: substrate is immersed in HF and HNO that volume ratio is 1: 1
3mixed solution in 5-30 minute.
(3) beneficial effect
The method of epitaxial silicon carbide on zero drift angle substrate provided by the invention, liquid silicon is utilized to infiltrate silicon carbide epitaxy surface, and system temperature is raised, improve the solubility of carbon source in liquid silicon, adopt liquid-phase epitaxial growth process to carry out isoepitaxial growth thereupon in zero drift angle silicon carbide substrates, can prevent from occurring the defect such as phase domain, crystal boundary in epitaxial loayer.Compared with carrying out carborundum homoepitaxy with existing chemical vapour deposition technique, the method for epitaxial silicon carbide on zero drift angle substrate provided by the invention can eliminate defect, and improve epitaxial loayer quality, tool has great advantage.In addition, the method of epitaxial silicon carbide on zero drift angle substrate provided by the invention also may be used for the epitaxial growth of other compound semiconductor, as the homoepitaxy of semiconducting nitride aluminium (AlN), gallium nitride (GaN), zinc oxide (ZnO) etc.The present invention is easy and simple to handle, is easy to promote, and obtains good result.
Accompanying drawing explanation
Fig. 1 shows the schematic diagram of phase domain defect in prior art;
Fig. 2 shows the method flow diagram of epitaxial silicon carbide on zero drift angle substrate provided by the invention;
Fig. 3 shows the schematic diagram of epitaxial silicon carbide on zero drift angle substrate provided by the invention;
Fig. 4 shows the optical microscope photograph of silicon epitaxial layers provided by the invention;
Fig. 5 shows the optical microscope photograph of silicon carbide epitaxial layers provided by the invention;
Fig. 6 shows the Raman collection of illustrative plates of silicon carbide epitaxial layers provided by the invention.
Embodiment
Below in conjunction with accompanying drawing, exemplary embodiments of the present invention are described.For clarity and brevity, actual embodiment is not limited to these technical characteristics described in specification.It should be understood, however, that in the process improving practical embodiments described in any one, the decision of multiple specific embodiment must be the specific objective that can realize improvement personnel, such as, defer to industry and to be correlated with the restriction relevant with business, described restriction changes along with the difference of embodiment.And even it should be understood that the effect of aforementioned improved is very complicated and consuming time, but this remains routine techniques means for the those skilled in the art knowing benefit of the present invention.
The invention provides a kind of method of epitaxial silicon carbide on zero drift angle substrate, adopt silicon carbide substrates Si face or the C face with zero drift angle, the indices of crystallographic plane of its correspondence are respectively (0001) or (0001), silicon source is passed into, at silicon carbide substrate surface extension one silicon layer under low temperature; Raised temperature, makes silicon layer melt, and makes outer surface smooth; Pass into carbon source, melting silicon layer and carbon are reacted and is transformed into carborundum.Repeat said process, until the silicon carbide epitaxial layers of desired thickness.Finally by unreacted silicon erosion removal, leave complete silicon carbide layer.Time in zero drift angle silicon carbide substrates by vapour phase epitaxy method growth homogeneity epitaxial layer, usually can produce the defect such as phase domain, crystal boundary in epitaxial loayer, the present invention can eliminate this kind of defect, thus improves the quality of silicon carbide epitaxial layers.
As shown in Figure 2, Fig. 2 shows the method flow diagram of epitaxial silicon carbide on zero drift angle substrate provided by the invention, and the method comprises the following steps:
Step 1: get one zero drift angle substrates and clean;
In this step, zero drift angle substrate can adopt 4H-SiC substrate, 6H-SiC substrate or Sapphire Substrate, its epitaxial surface indices of crystallographic plane be (0001) or
Step 2: at zero drift angle substrate silicon epitaxial layers;
In this step, at zero drift angle substrate silicon epitaxial layers, the concrete technology condition of employing is: pass into silicon source SiH
4temperature be 800 DEG C ~ 1350 DEG C, SiH
4hydrogen is adopted to be carrier gas and diluent gas, wherein SiH
4flow is 1 ~ 10sccm, and hydrogen flowing quantity is 1 ~ 10slm, and the extension duration is 1 ~ 5 minute, and pressure is 1 ~ 40Torr.
Step 3: raised temperature makes silicon layer melt and forms melting silicon layer;
In this step, raised temperature makes silicon layer melt and forms melting silicon layer, the concrete technology condition adopted is: temperature is elevated to 1450 DEG C ~ 1550 DEG C, be incubated 10 ~ 30 minutes under an argon, argon flow amount used is 1 ~ 5slm, and pressure used is 500 ~ 760Torr, and substrate is rotated, rotating speed is 1-10 rev/min, and silicon layer is melted, and makes outer surface smooth.
Step 4: pass into carbon source, makes molten silicon layer change become silicon carbide layer;
In this step, pass into carbon source, molten silicon layer change is made to become silicon carbide layer, the concrete technology condition adopted is: keep substrate to rotate, rotating speed is 1-10 rev/min, and argon gas is switched to hydrogen, hydrogen flowing quantity used is 1 ~ 5slm, pressure used is 10 ~ 760Torr, and temperature is 1550 DEG C ~ 1850 DEG C, passes into carbon source C
2h
4or C
3h
8, flow is 100 ~ 500sccm, and the duration is 10 ~ 100 minutes.
Step 5: judge whether silicon carbide layer reaches desired thickness, if do not reached, then repeated execution of steps 2 ~ step 4; If reached, then perform step 6.
Step 6: eroded by the silicon layer not being transformed into silicon carbide layer, leaves complete carborundum;
In this step, the silicon layer not being transformed into silicon carbide layer is eroded, the concrete technology condition adopted is: keep substrate to rotate, rotating speed is 1-10 rev/min, and hydrogen flowing quantity used is 1 ~ 5slm, and pressure used is 10 ~ 760Torr, temperature is 1550 DEG C ~ 1850 DEG C, pass into HCl gas, flow is 100 ~ 500sccm, and the duration is 10 ~ 100 minutes; Or, substrate is immersed in HF and HNO that volume ratio is 1: 1
3mixed solution in 5-30 minute.
Fig. 3 shows the schematic diagram of an embodiment of epitaxial silicon carbide on zero drift angle substrate provided by the invention.As shown in Figure 3, adopt 4 inches of N-shaped 4H-SiC substrates, substrate epitaxial crystal face is silicon face (0001), 4H-SiC standard RCA clean technique is cleaned up, and dries up with hot nitrogen, loads in epitaxial furnace.
Then, carry out silicon layer epitaxial growth, its technique is: furnace temperature rises to 860 DEG C, is incubated 30 minutes, and 4H-SiC substrate is rotated with holder, and rotating speed is 8 revs/min.Pass into H
2gas, flow is 10slm, keeps 30 minutes, further cleaning 4H-SiC surface, as removed the remaining SiO in surface
2.
Then, silicon source SiH is passed into
4, flow is 50sccm, and the extension duration is 20 minutes, keeps growth room's pressure to be 10Torr.Can growth thickness be the silicon layer of 10 microns, its optical microscope photograph as shown in Figure 4.
After this, melted by silicon layer, its technique is: make temperature be elevated to 1550 DEG C, be incubated 10 minutes under an argon, argon flow amount used is 5slm, and pressure used is 760Torr, adjustment silicon carbide substrates rotating speed is 10 revs/min, silicon layer is melted, and makes outer surface smooth.
After this, carry out the growth of carborundum, its technique is: argon gas is switched to hydrogen, and close argon gas, open hydrogen, flow is 5slm, and pressure is 200Torr, and temperature is 1750 DEG C, passes into carbon source C
2h
4, flow is 500sccm, and the duration is 60 minutes.Can growth thickness be the thin layer carborundum of 30 microns.Now, according to actual needs, " epitaxial silicon-molten silicon-growing silicon carbide " this process can be repeated, until the silicon carbide layer grown reaches desired thickness, as 100 microns.
Finally, unreacted excess silicon removed by corrosion, its technique is: hydrogen flowing quantity is 3slm, and pressure is 300Torr, and temperature is 1550 DEG C, passes into HCl gas, and flow is 200sccm, and the duration is 30 minutes.
The carbofrax material that final acquisition does not have silicon residual, as shown in Figure 5, detect through Raman, as shown in Figure 6, epitaxial loayer is all pure 4H-SiC to its optical microscope photograph, does not have silicon to remain, and does not also have the polytype of other SiC to be mingled with.
Although based on some preferred embodiments, invention has been described, and those skilled in the art should know, and scope of the present invention is not limited to those embodiments.Without departing from the spirit and substance in the present invention, those of ordinary skill in the art can carry out variations and modifications to embodiment on understanding basis of the present invention, and therefore falls into the protection range of claims of the present invention restriction.
Claims (8)
1. the method for epitaxial silicon carbide on zero drift angle substrate, it is characterized in that, the method comprises:
Step 1: get one zero drift angle substrates and clean;
Step 2: at zero drift angle substrate silicon epitaxial layers;
Step 3: raised temperature makes silicon layer melt and forms melting silicon layer;
Step 4: pass into carbon source, makes molten silicon layer change become silicon carbide layer;
Step 5: judge whether silicon carbide layer reaches desired thickness, if do not reached, then repeated execution of steps 2 ~ step 4; If reached, then perform step 6;
Step 6: eroded by the silicon layer not being transformed into silicon carbide layer, leaves complete carborundum.
2. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, zero drift angle substrate described in step 1 is 4H-SiC substrate, 6H-SiC substrate or Sapphire Substrate.
3. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, zero drift angle substrate described in step 1, its epitaxial surface indices of crystallographic plane be (0001) or
4. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, at zero drift angle substrate silicon epitaxial layers described in step 2, concrete technology condition is:
Pass into silicon source SiH
4temperature be 800 DEG C ~ 1350 DEG C, SiH
4hydrogen is adopted to be carrier gas and diluent gas, wherein SiH
4flow is 1 ~ 10sccm, and hydrogen flowing quantity is 1 ~ 10slm, and the extension duration is 1 ~ 5 minute, and pressure is 1 ~ 40Torr.
5. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, raised temperature described in step 3 makes silicon layer melt and forms melting silicon layer, and concrete technology condition is:
Temperature is elevated to 1450 DEG C ~ 1550 DEG C, is incubated 10 ~ 30 minutes under an argon, and argon flow amount used is 1 ~ 5slm, and pressure used is 500 ~ 760Torr, and substrate is rotated, and rotating speed is 1-10 rev/min, and silicon layer is melted, and makes outer surface smooth.
6. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, pass into carbon source described in step 4, and make molten silicon layer change become silicon carbide layer, concrete technology condition is:
Keep substrate to rotate, rotating speed is 1-10 rev/min, and argon gas is switched to hydrogen, and hydrogen flowing quantity used is 1 ~ 5slm, and pressure used is 10 ~ 760Torr, and temperature is 1550 DEG C ~ 1850 DEG C, passes into carbon source C
2h
4or C
3h
8, flow is 100 ~ 500sccm, and the duration is 10 ~ 100 minutes.
7. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, eroded by the silicon layer not being transformed into silicon carbide layer described in step 6, concrete technology condition is:
Keep substrate to rotate, rotating speed is 1-10 rev/min, and hydrogen flowing quantity used is 1 ~ 5slm, and pressure used is 10 ~ 760Torr, and temperature is 1550 DEG C ~ 1850 DEG C, passes into HCl gas, and flow is 100 ~ 500sccm, and the duration is 10 ~ 100 minutes.
8. the method for epitaxial silicon carbide on zero drift angle substrate according to claim 1, is characterized in that, eroded by the silicon layer not being transformed into silicon carbide layer described in step 6, concrete technology condition is:
Substrate is immersed in HF and HNO that volume ratio is 1: 1
3mixed solution in 5-30 minute.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111235633A (en) * | 2020-01-16 | 2020-06-05 | 中国科学院半导体研究所 | Method for preparing self-supporting silicon carbide wafer on surface of silicon melt through CVD |
| CN113957535A (en) * | 2021-10-19 | 2022-01-21 | 林健峯 | Method for forming single crystal silicon carbide film on silicon substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101052754A (en) * | 2005-06-23 | 2007-10-10 | 住友电气工业株式会社 | Method of surface reconstruction for silicon carbide substrate |
| CN101536162A (en) * | 2006-10-30 | 2009-09-16 | 住友电气工业株式会社 | Method for manufacturing silicon carbide semiconductor device |
| US20100314626A1 (en) * | 2006-11-21 | 2010-12-16 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing the same |
| CN102597338A (en) * | 2010-05-28 | 2012-07-18 | 住友电气工业株式会社 | Silicon carbide substrate and method for producing same |
| CN103199008A (en) * | 2013-03-11 | 2013-07-10 | 西安电子科技大学 | Homoepitaxial method on zero offset 4H-SiC substrate |
| CN103489759A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homogeneous Web Growth epitaxy method |
-
2015
- 2015-08-11 CN CN201510490653.7A patent/CN105140106B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101052754A (en) * | 2005-06-23 | 2007-10-10 | 住友电气工业株式会社 | Method of surface reconstruction for silicon carbide substrate |
| CN101536162A (en) * | 2006-10-30 | 2009-09-16 | 住友电气工业株式会社 | Method for manufacturing silicon carbide semiconductor device |
| US20100314626A1 (en) * | 2006-11-21 | 2010-12-16 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing the same |
| CN102597338A (en) * | 2010-05-28 | 2012-07-18 | 住友电气工业株式会社 | Silicon carbide substrate and method for producing same |
| CN103199008A (en) * | 2013-03-11 | 2013-07-10 | 西安电子科技大学 | Homoepitaxial method on zero offset 4H-SiC substrate |
| CN103489759A (en) * | 2013-09-06 | 2014-01-01 | 西安电子科技大学 | SiC substrate homogeneous Web Growth epitaxy method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111235633A (en) * | 2020-01-16 | 2020-06-05 | 中国科学院半导体研究所 | Method for preparing self-supporting silicon carbide wafer on surface of silicon melt through CVD |
| CN113957535A (en) * | 2021-10-19 | 2022-01-21 | 林健峯 | Method for forming single crystal silicon carbide film on silicon substrate |
| CN113957535B (en) * | 2021-10-19 | 2022-12-27 | 林健峯 | Method for forming single crystal silicon carbide film on silicon substrate |
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