CN105137472A - Directional transmission scintillator device based on surface resonant cavity structure - Google Patents
Directional transmission scintillator device based on surface resonant cavity structure Download PDFInfo
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- CN105137472A CN105137472A CN201510566346.2A CN201510566346A CN105137472A CN 105137472 A CN105137472 A CN 105137472A CN 201510566346 A CN201510566346 A CN 201510566346A CN 105137472 A CN105137472 A CN 105137472A
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- scintillator
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- cavity configuration
- resonance cavity
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Abstract
The invention relates to a directional transmission scintillator device based on a surface resonant cavity structure. The directional transmission scintillator device includes a scintillator, a planar resonant cavity arranged on a light emergence surface of the scintillator, reflection coatings arranged on the rest of surfaces of the scintillator, the planar resonant cavity includes a bottom Bragg reflector, a middle layer and a top Bragg reflector arranged in sequence from bottom to top, the reflectivity of the bottom Bragg reflector is higher than that of the top Bragg reflector, and a resonance transmission wavelength of the planar resonant cavity is matched with an emission wavelength peak value of the scintillator. The scintillator device with highly concentrated light-emitting directionality greatly improves collection efficiency of a photoelectric detector, substantially improves detection efficiency, sensitivity and signal-to-noise ratio of a scintillation detection system, and has very important application value in the fields of radiation detection, ray imaging, nuclear medicine, space exploration and the like.
Description
Technical field
The invention belongs to nuclear radiation detection field, especially relate to a kind of directional transmissions scintillation component based on surface resonance cavity configuration, there is the transmitting directivity of height, therefore will significantly improve detection efficiency in X-ray detection X.
Background technology
Scintillator a kind ofly absorbs high energy particle or high-energy ray and make it convert the functional material of visible ray to, the visible ray that scintillator emission goes out, also passage of scintillation light is called, by subsequent optical electric detection device as photomultiplier, photodiode and CCD device receive, thus realize the detection of high energy particle or high-energy ray, scintillator is the core component in scintillation detecter system, and the characteristics of luminescence of scintillator directly determines the performance of detection system.Scintillation detecter system plays more and more important role in high-energy physics experiment, nuclear physics experiment, nuclear weapon laboratory diagnosis, nuclear medicine, cosmic rays detection and safety check, is responsible for irreplaceable function.
The passage of scintillation light emitted from scintillator surface belongs to the lambert's type distribution meeting cosine function relationship in space, namely at all directions uniform emission in space, do not have specific orientation.But the emission characteristic of this space distribution is unfavorable for the raising of detection efficiency, this is because in the detection system of reality photodetector often distance scintillator certain distance, the passage of scintillation light in a specific solid angle is only had to enter detector, the passage of scintillation light do not entered in detector is then wasted, and greatly limit the lifting of detection system efficiency.
Chinese patent CN104035121A discloses the planar micro cavity scintillation component that a kind of high orientation is launched, film scintillator layers is between two Bragg mirrors, the method can produce the effect of directional transmissions, but the scintillator layers in this structure can only be thickness is hundreds of nanometer to the film of several microns, when thickness continues the inefficacy that can cause planar micro cavity regulating effect when increasing.In some scintillation detecter systems, in order to realize there are enough prevention abilities to high energy particle or high-energy ray, the scintillator block materials that thickness must be used to be millimeter or centimetre scale, in order to realize the control of the light emission direction of block scintillator, must adopt new construction design method.
Summary of the invention
Object of the present invention is exactly the problem lacking orientation in order to solve the block scintillator emitting space distribution with macroscopic thickness, provides a kind of directional transmissions scintillation component based on surface resonance cavity configuration, realizes the raising of passage of scintillation light emission space directivity.
Object of the present invention can be achieved through the following technical solutions:
Based on the directional transmissions scintillation component of surface resonance cavity configuration, comprise
Scintillator,
Be arranged in the planar resonant chamber of scintillator exiting surface,
Be arranged in the reflectance coating of scintillator remaining surface,
Described planar resonant chamber comprise set gradually from bottom to top bottom dbr mirror, middle layer and top Bragg mirror, the Resonance Transmission wavelength in planar resonant chamber mates with scintillator emission wavelength peak.
Described bottom dbr mirror and top Bragg mirror are alternately formed by some two kinds of transparent dielectric materials to having high low-refraction, the logarithm of bottom dbr mirror is greater than the logarithm of top Bragg mirror, the thickness of every layer of dielectric material is λ/4n, wherein λ is the centre wavelength of scintillator luminescence, n is the refractive index of corresponding transparent dielectric material, and the reflectivity of bottom dbr mirror is higher than the reflectivity of top Bragg mirror.
Described middle layer is high refractive index transparent dielectric material in Bragg mirror or low-refraction transparent dielectric material, the thickness in the middle layer integer that to be m λ/2n, m be between 1 and 3.
Described high refractive index transparent dielectric material is selected from TiO
2, SiN or Ta
2o
5in one, described low-refraction transparent dielectric material is selected from SiO
2, MgF
2or CaF
2in one.
Described planar resonant chamber adopts the preparation of magnetron sputtering, electron beam evaporation or thermal evaporation techniques.
Described scintillator is the block with millimeter or cm size.
Described scintillator is selected from plastic scintillant, glass scintillator, ZnO scintillator, Lu
2siO
5: Ce scintillator, (Lu, Y)
2siO
5: Ce scintillator, Bi
4ge
3o
12scintillator, Y
3al
5o
12: Ce scintillator, CsI:Tl scintillator, NaI:Tl scintillator or PbWO
4one in scintillator.
Described reflectance coating is diffuse coatings or mirror face reflection coating.
The material that described diffuse coatings adopts is MgO, BaSO
4or the one in teflon, adopt the preparation of Typical spray technology.
Described mirror face reflection coating, according to scintillator emission wavelength chooses silverskin, aluminium film or golden film, adopts the preparation of magnetron sputtering, electron beam evaporation or thermal evaporation coating technique.
Control luminous near normal direction.Principle is as follows: planar resonant cavity configuration has spatial selectivity for the transmission of its resonance wave strong point, namely can be transmitted along the light near its normal direction, the light in other direction is then reflected back scintillator inside by structure of resonant cavity, although in scintillator, initial luminous is along all directions like this, the light only along normal direction can transmission.Again owing to having prepared reflectance coating to other 5 faces of scintillator, those are reflected back the light of scintillator inside then by primary event or the multiple reflections of reflectance coating by structure of resonant cavity, until when its direction of propagation is near normal direction, thus producing outgoing through structure of resonant cavity, final effect is that all passage of scintillation light are all along outgoing near normal direction.
Compared with prior art, the present invention has the following advantages:
1, the structure related in the method is applicable to the scintillator of various sizes and thickness, the application scenario of thick scintillator must be adopted to have important practical value for those.
2, the scintillation component of this kind of light emission direction high concentration will improve the collection efficiency of photodetector greatly, thus significantly promote the detection efficiency of scintillation detecter system, sensitivity and signal to noise ratio (S/N ratio), in fields such as radiation detection, radial imaging, nuclear medicine and space explorations, there is very important using value.
Accompanying drawing explanation
Fig. 1 is the schematic cross-section of the scintillation component of surface resonance cavity configuration.
Fig. 2 is the structural representation of resonant cavity in embodiment 1.
Fig. 3 is the transmission spectrum of the scintillation component normal direction after having prepared structure of resonant cavity in embodiment 1.
Fig. 4 is the scintillation component angle dependency transmission spectrum in embodiment 1 with photon resonance cavity configuration.
Fig. 5 has the scintillator of structure of resonant cavity and the light emitting anger distribution plan of reference sample under the excitation of X-rays of embodiment 1.
Fig. 6 is the scintillation component angle dependency transmission spectrum in embodiment 2 with photon resonance cavity configuration.
Fig. 7 has the scintillator of structure of resonant cavity and the light emitting anger distribution plan of reference sample under the excitation of X-rays of embodiment 2.
In figure, 1-scintillator, 2-resonant cavity, 200-middle layer, 201-top Bragg mirror, 202-bottom dbr mirror, 210-SiO
2, 220-Ta
2o
5, 3-reflectance coating.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in detail.
Embodiment 1:
The scintillator that this example adopts is the ST401 plastic scintillator that Beijing Nuclear Instrument Factory produces, and the centre wavelength of its flashing is 410nm, and the scintillator chosen is of a size of 2x2x2cm
3.Reflectance coating adopts teflon.Surface resonance cavity configuration as shown in Figure 2, chooses SiO
2for low-index material, choose Ta
2o
5for high-index material, wherein top mirror 201 is by three couples of SiO
2210 and Ta
2o
5220 cycle alternating structures are formed, and bottom mirror 202 is by four couples of SiO
2210 and Ta
2o
5220 cycle alternating structures are formed, and middle layer is by SiO
2200 are formed.Preparation process is as follows: cutting also polishing plastic scintillator becomes above-mentioned size, and adopt electron beam evaporation technique to prepare resonant cavity knot, device therefor is the model that Wenzhou Jianeng Vacuum Plating Equipment Technology Co., Ltd. produces is the vacuum coating equipment of JN-GLD-1200.The SiO obtained in experiment
2and Ta
2o
5refractive index be respectively 1.46 and 2.30, therefore form SiO corresponding to Bragg mirror
2210, Ta
2o
5physical thickness λ/the 4n of 220 is respectively 70.21nm and 44.56nm, middle layer SiO
2the physical thickness m λ/2n of 200 is 140.42nm (m value gets 1 here).The vacuum tightness of vacuum chamber is 5 × 10
-3pa, rate of sedimentation is 0.5nm/s.Prepared the transmission spectrum in structure of resonant cavity sample normal direction in scintillator surface, as shown in Figure 3, its transmission peak value is positioned at 410nm, shows that the optical property of the structure of resonant cavity prepared is consistent with designing requirement.Angle dependency transmission spectrum, as shown in Figure 4, result shows that its transmission mainly concentrates in ° angle, normal direction ± 20, shows strong directivity ability of regulation and control.Subsequently, other five faces of scintillator are carried out to the preparation of reflectance coating, coated teflon diffuse reflector in this example.Utilize excitation of X-rays sample, X ray is incident from the bottom of sample, receives passage of scintillation light using photomultiplier as detector from structure of resonant cavity front, changes the angle in detector and sample normal direction, obtain the luminous dependence with angle change of sample, as shown in Figure 5.Little 3 orders of magnitude of Thickness Ratio scintillator in the reflection horizon bottom sample itself, can think that it is very faint negligible to the absorption of X ray.In order to the effect of resonant cavity is described more fully, measure the reference sample not covering resonant cavity simultaneously, for the ease of contrast, reference sample except exiting surface, all the other five faces are coated too reflection horizon.
Embodiment 2:
This example adopts scintillator to be the Bi that Shanghai Xi Kasi company produces
4ge
3o
12scintillator, the centre wavelength of its flashing is 480nm, and the scintillator chosen is of a size of 5x5x2cm
3.Reflectance coating adopts silver-plated emission layer.SiO chosen by surface resonance cavity configuration
2for low-index material, choose TiO
2for high-index material, wherein top mirror is by five couples of SiO
2and TiO
2cycle alternating structure is formed, and bottom mirror is by six couples of SiO
2and TiO
2cycle alternating structure is formed, and forms the SiO of catoptron
2and TiO
2physical thickness λ/4n be respectively 82.2 and 48.0nm, middle layer is by TiO
2form, its physical thickness m λ/2n is 288.0nm (m value gets 3 here).Adopt electron beam evaporation technique to prepare resonant cavity knot, its process is identical with embodiment 1.Have the angle dependency transmission spectrum of scintillation component of photon resonance cavity configuration as shown in Figure 6, result shows that its transmission mainly concentrates in ° angle, normal direction ± 10.The effect of its directivity higher than embodiment 1, mainly because adopt SiO
2and TiO
2right refractive index contrast is higher, and the cycle logarithm of top and bottom dbr mirror employing is more simultaneously, therefore has the regulation and control of better directivity.Adopting the method for electron beam evaporation on all the other five faces, be coated with thickness subsequently is again that the silverskin of 2 microns is as reflectance coating.Have the light emitting anger distribution plan of the scintillator of structure of resonant cavity and reference sample under excitation of X-rays as shown in Figure 7, result shows that its transmission mainly concentrates in ° angle, normal direction ± 10.
Embodiment 3
Based on the directional transmissions scintillation component of surface resonance cavity configuration, comprise scintillator, be arranged in the planar resonant chamber of scintillator exiting surface, be arranged in the reflectance coating of scintillator remaining surface.
Wherein, planar resonant chamber adopts magnetron sputtering technique to prepare, comprise set gradually from bottom to top bottom dbr mirror, middle layer and top Bragg mirror.Bottom dbr mirror and top Bragg mirror are alternately formed by some two kinds of transparent dielectric materials to having high low-refraction, the logarithm of bottom dbr mirror is greater than the logarithm of top Bragg mirror, the thickness of every layer of dielectric material is λ/4n, wherein λ is the centre wavelength of scintillator luminescence, n is the refractive index of corresponding transparent dielectric material, middle layer is high refractive index transparent dielectric material in Bragg mirror or low-refraction transparent dielectric material, the thickness in middle layer is m λ/2n, m is 2.In the present embodiment, bottom dbr mirror is by the SiN layer of 5 pairs of alternating structures and MgF
2layer is formed, and top Bragg mirror is by the SiN layer of 3 pairs of alternating structures and MgF
2layer is formed.
Scintillator is the block with millimeter or cm size, and what the present embodiment adopted is ZnO scintillator.Reflectance coating is teflon diffuse coatings, adopts the preparation of Typical spray technology.
Embodiment 4
Based on the directional transmissions scintillation component of surface resonance cavity configuration, comprise scintillator, be arranged in the planar resonant chamber of scintillator exiting surface, be arranged in the reflectance coating of scintillator remaining surface.
Wherein, planar resonant chamber adopts electron beam evaporation technique to prepare, comprise set gradually from bottom to top bottom dbr mirror, middle layer and top Bragg mirror.Bottom dbr mirror and top Bragg mirror are alternately formed by some two kinds of transparent dielectric materials to having high low-refraction, the logarithm of bottom dbr mirror is greater than the logarithm of top Bragg mirror, the thickness of every layer of dielectric material is λ/4n, wherein λ is the centre wavelength of scintillator luminescence, n is the refractive index of corresponding transparent dielectric material, middle layer is high refractive index transparent dielectric material in Bragg mirror or low-refraction transparent dielectric material, the thickness in middle layer is m λ/2n, m is 3.In the present embodiment, bottom dbr mirror is by the Ta of 6 pairs of alternating structures
2o
5layer and CaF
2layer is formed, and top Bragg mirror is by the Ta of 4 pairs of alternating structures
2o
5layer and CaF
2layer is formed.
Scintillator is the block with millimeter or cm size, and what the present embodiment adopted is NaI:Tl scintillator.Reflectance coating is golden film mirror reflection horizon, adopts electron beam evaporation technique preparation.
Claims (9)
1. based on the directional transmissions scintillation component of surface resonance cavity configuration, it is characterized in that, this device comprises
Scintillator,
Be arranged in the planar resonant chamber of scintillator exiting surface,
Be arranged in the reflectance coating of scintillator remaining surface,
Described planar resonant chamber comprise set gradually from bottom to top bottom dbr mirror, middle layer and top Bragg mirror.
2. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 1, is characterized in that,
Described bottom dbr mirror and top Bragg mirror are alternately formed by some two kinds of transparent dielectric materials to having high low-refraction, the logarithm of bottom dbr mirror is greater than the logarithm of top Bragg mirror, the thickness of every layer of dielectric material is λ/4n, wherein λ is the centre wavelength of scintillator luminescence, n is the refractive index of corresponding transparent dielectric material, the reflectivity of bottom dbr mirror is higher than the reflectivity of top Bragg mirror
Described middle layer is high refractive index transparent dielectric material in Bragg mirror or low-refraction transparent dielectric material, the thickness in the middle layer integer that to be m λ/2n, m be between 1 and 3.
3. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 2, is characterized in that, described high refractive index transparent dielectric material is selected from TiO
2, SiN or Ta
2o
5in one, described low-refraction transparent dielectric material is selected from SiO
2, MgF
2or CaF
2in one.
4. the directional transmissions scintillation component based on surface resonance cavity configuration according to any one of claim 1-3, is characterized in that, described planar resonant chamber adopts the preparation of magnetron sputtering, electron beam evaporation or thermal evaporation techniques.
5. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 1, is characterized in that, described scintillator is the block with millimeter or cm size.
6. according to claim 1 or 5 based on the directional transmissions scintillation component of surface resonance cavity configuration, it is characterized in that, described scintillator is selected from plastic scintillant, glass scintillator, ZnO scintillator, Lu
2siO
5: Ce scintillator, (Lu, Y)
2siO
5: Ce scintillator, Bi
4ge
3o
12scintillator, Y
3al
5o
12: Ce scintillator, CsI:Tl scintillator, NaI:Tl scintillator or PbWO
4one in scintillator.
7. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 1, is characterized in that, described reflectance coating is diffuse coatings or mirror face reflection coating.
8. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 7, is characterized in that, the material that described diffuse coatings adopts is MgO, BaSO
4or the one in teflon, adopt the preparation of Typical spray technology.
9. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 7, it is characterized in that, described mirror face reflection coating, according to scintillator emission wavelength chooses silverskin, aluminium film or golden film, adopts the preparation of magnetron sputtering, electron beam evaporation or thermal evaporation coating technique.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106249272A (en) * | 2016-10-18 | 2016-12-21 | 山西中辐核仪器有限责任公司 | A kind of device collecting plastic scintillant fluorescent photon |
| CN106772538A (en) * | 2016-11-22 | 2017-05-31 | 同济大学 | A kind of scintillator of utilization cycle metal structure regulation and control |
| CN107134536A (en) * | 2017-05-10 | 2017-09-05 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and its manufacture method, display panel, display device |
| CN112799118A (en) * | 2020-12-30 | 2021-05-14 | 西北核技术研究所 | Scintillation detector capable of improving detection efficiency and detection method thereof |
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| CN101779145A (en) * | 2007-08-22 | 2010-07-14 | 皇家飞利浦电子股份有限公司 | Be used for improving reverberator and the optical collimator layout that scintillation detector light is collected |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106249272A (en) * | 2016-10-18 | 2016-12-21 | 山西中辐核仪器有限责任公司 | A kind of device collecting plastic scintillant fluorescent photon |
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| CN107134536A (en) * | 2017-05-10 | 2017-09-05 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and its manufacture method, display panel, display device |
| CN112799118A (en) * | 2020-12-30 | 2021-05-14 | 西北核技术研究所 | Scintillation detector capable of improving detection efficiency and detection method thereof |
| CN112799118B (en) * | 2020-12-30 | 2024-04-26 | 西北核技术研究所 | Scintillation detector capable of improving detection efficiency and detection method thereof |
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