CN105137472B - Directional transmissions scintillation component based on surface resonance cavity configuration - Google Patents
Directional transmissions scintillation component based on surface resonance cavity configuration Download PDFInfo
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- CN105137472B CN105137472B CN201510566346.2A CN201510566346A CN105137472B CN 105137472 B CN105137472 B CN 105137472B CN 201510566346 A CN201510566346 A CN 201510566346A CN 105137472 B CN105137472 B CN 105137472B
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Abstract
The present invention relates to the directional transmissions scintillation component based on surface resonance cavity configuration, including scintillator, it is arranged in the planar resonant chamber of scintillator exiting surface, it is arranged in the reflectance coating of scintillator remaining surface, planar resonant chamber includes bottom dbr mirror, intermediate layer and the top Bragg mirror set gradually from bottom to top, wherein the reflectivity of bottom dbr mirror is higher than the reflectivity of top Bragg mirror, and the Resonance Transmission wavelength of planar resonant chamber matches with scintillator emission wavelength peak.The scintillation component of this kind of light emission direction high concentration will greatly improve the collection efficiency of photodetector, so as to which the detection efficient of scintillation detecter system, sensitivity and signal to noise ratio be substantially improved, there is very important application value in fields such as radiation detection, radial imaging, nuclear medicine and space explorations.
Description
Technical field
The invention belongs to nuclear radiation detection field, is dodged more particularly, to a kind of directional transmissions based on surface resonance cavity configuration
Bright body device, has the transmitting directivity of height, therefore detection efficient will be significantly improved in X-ray detection X.
Background technology
Scintillator is a kind of absorption high energy particle or high-energy ray and it is converted into the functional material of visible ray, scintillator
The visible ray launched, is also called passage of scintillation light, by follow-up Electro-Optical Sensor Set such as photomultiplier, photodiode and CCD devices
Part receives, and so as to realize the detection of high energy particle or high-energy ray, scintillator is the core component in scintillation detecter system, flicker
The characteristics of luminescence of body directly determines the performance of detection system.Scintillation detecter system is in high-energy physics experiment, nuclear physics experiment, core
More and more important role is play in weapon laboratory diagnosis, nuclear medicine, cosmic ray detection and safety check, being responsible for can not
The function of replacement.
Belong to the Lambertian distribution for meeting cosine function relationship in space from the passage of scintillation light that scintillator surface emits, i.e.,
All directions uniform emission in space, is not orientated specifically.But the transmitting feature of this spatial distribution is unfavorable for detecting
The raising of efficiency, because photodetector is often apart from scintillator certain distance, only one in the detection system of reality
Passage of scintillation light in individual specific solid angle can enter detector, be then wasted without entering the passage of scintillation light in detector, significantly
Limit the lifting of detection system efficiency.
Chinese patent CN104035121A discloses a kind of planar micro cavity scintillation component of high orientation transmitting, and film dodges
Bright body layer is between two Bragg mirrors, and this method can produce the effect of directional transmissions, but the sudden strain of a muscle in the structure
Bright body layer can only be the film that thickness is hundreds of nanometers to several microns, and planar micro cavity regulation and control effect can be caused when thickness continues increase
The failure of fruit.In some scintillation detecter systems, there are enough prevention abilities to high energy particle or high-energy ray to realize, must
The scintillator block materials that thickness is millimeter or centimetre scale must be used, in order to realize the light emission direction of block scintillator
Control, it is necessary to use new construction design method.
The content of the invention
The purpose of the present invention is exactly to lack orientation to solve to have the distribution of the block scintillator emitting space of macroscopic thickness
The problem of property, there is provided a kind of directional transmissions scintillation component based on surface resonance cavity configuration, realize passage of scintillation light emission space
The raising of directionality.
The purpose of the present invention can be achieved through the following technical solutions：
Directional transmissions scintillation component based on surface resonance cavity configuration, including
Scintillator,
The planar resonant chamber of scintillator exiting surface is arranged in,
The reflectance coating of scintillator remaining surface is arranged in,
Described planar resonant chamber includes bottom dbr mirror, intermediate layer and the top cloth set gradually from bottom to top
Glug speculum, the Resonance Transmission wavelength of planar resonant chamber match with scintillator emission wavelength peak.
Described bottom dbr mirror and top Bragg mirror by it is some to high low-refraction two
Kind of transparent dielectric material is alternately formed, and the logarithm of bottom dbr mirror is more than the logarithm of top Bragg mirror, every layer
The thickness of dielectric material is λ/4n, and wherein λ is the luminous centre wavelength of scintillator, and n is the refractive index of corresponding transparent dielectric material,
The reflectivity of bottom dbr mirror is higher than the reflectivity of top Bragg mirror.
Described intermediate layer is the high refractive index transparent dielectric material or low-refraction transparent medium in Bragg mirror
Material, the thickness in intermediate layer is m λ/2n, and m is the integer between 1 and 3.
Described high refractive index transparent dielectric material is selected from TiO2, SiN or Ta2O5In one kind, described low-refraction is saturating
Bright dielectric material is selected from SiO2、MgF2Or CaF2In one kind.
Described planar resonant chamber is prepared using magnetron sputtering, electron beam evaporation or thermal evaporation techniques.
Described scintillator is the block with millimeter or cm size.
Described scintillator is selected from plastic scintillant, glass scintillator, ZnO scintillators, Lu2SiO5:Ce scintillators, (Lu,
Y)2SiO5:Ce scintillators, Bi4Ge3O12Scintillator, Y3Al5O12:Ce scintillators, CsI:Tl scintillators, NaI:Tl scintillators or
PbWO4One kind in scintillator.
Described reflectance coating is diffusing reflection coating or mirror face reflection coating.
The material that described diffusing reflection coating uses is MgO, BaSO4Or one kind in polytetrafluoroethylene (PTFE), using conventional spray
It is prepared by painting technology.
Described mirror face reflection coating selects silverskin, aluminium film or golden film according to scintillator emission wavelength, using magnetron sputtering,
It is prepared by electron beam evaporation or thermal evaporation coating technique.
Control lights along near normal direction.Principle is as follows：Planar resonant cavity configuration is saturating for its resonance wave strong point
Penetrate with spatial selectivity, i.e., can be transmitted along the light near its normal direction, and the light in other directions is then by resonant cavity
Structure is reflected back inside scintillator, although so initial luminous is along all directions in scintillator, only along normal side
To light can transmit.Again due to being prepared for reflectance coating to other 5 faces of scintillator, those reflect backflash by structure of resonant cavity
The light then primary event by reflectance coating or the multiple reflections in internal portion are sparkled, until its direction of propagation is along near normal direction
When, so as to produce outgoing through structure of resonant cavity, final effect is that all passage of scintillation light are nearby emitted all along normal direction.
Compared with prior art, the present invention has advantages below：
1st, the structure being related in this method is applied to the scintillator of various sizes and thickness, and thick dodge must be used for those
The application scenario of bright body has important practical value.
2nd, the scintillation component of this kind of light emission direction high concentration will greatly improve the collection efficiency of photodetector, from
And detection efficient, sensitivity and the signal to noise ratio of scintillation detecter system is substantially improved, radiation detection, radial imaging, nuclear medicine and
The fields such as space exploration have very important application value.
Brief description of the drawings
Fig. 1 is the schematic cross-section of the scintillation component of surface resonance cavity configuration.
Fig. 2 is the structural representation of resonant cavity in embodiment 1.
Fig. 3 is the transmission spectrum that the scintillation component normal direction after structure of resonant cavity has been prepared in embodiment 1.
Fig. 4 is the angle dependency transmission spectrum of scintillation component for having in embodiment 1 photon resonance cavity configuration.
Fig. 5 is that there is the scintillator of structure of resonant cavity and the light emitting anger of reference sample to be distributed under the excitation of X-rays of embodiment 1
Figure.
Fig. 6 is the angle dependency transmission spectrum of scintillation component for having in embodiment 2 photon resonance cavity configuration.
Fig. 7 is that there is the scintillator of structure of resonant cavity and the light emitting anger of reference sample to be distributed under the excitation of X-rays of embodiment 2
Figure.
In figure, 1- scintillators, 2- resonant cavities, 200- intermediate layers, 201- tops Bragg mirror, 202- bottoms Prague
Speculum, 210-SiO2、220-Ta2O5, 3- reflectance coatings.
Embodiment
The present invention is described in detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1：
The ST401 plastic scintillators that the scintillator that this example uses produces for Beijing Nuclear Instrument Factory, in its flashing
The a length of 410nm of cardiac wave, the scintillator size of selection is 2x2x2cm3.Reflectance coating uses polytetrafluoroethylene (PTFE).Surface resonance chamber knot
Structure is as shown in Fig. 2 choose SiO2For low-index material, Ta is chosen2O5For high-index material, wherein top mirror 201 by
Three couples of SiO2210 and Ta2O5220 cycle alternating structures are formed, and bottom mirror 202 is by four couples of SiO2210 and Ta2O5 220
Cycle alternating structure is formed, and intermediate layer is by SiO2200 are formed.Preparation process is as follows：Cut and polishing plastic scintillator is into above-mentioned
Size, resonant cavity knot is prepared using electron beam evaporation technique, device therefor is that Canon of Wenzhou City vacuum plating equipment science and technology is limited
The model JN-GLD-1200 of company's production vacuum coating equipment.The SiO obtained in experiment2And Ta2O5Refractive index be respectively
1.46 and 2.30, therefore form the SiO corresponding to Bragg mirror2 210、Ta2O5220 physical thickness λ/4n is respectively
70.21nm and 44.56nm, intermediate layer SiO2200 physical thickness m λ/2n are 140.42nm (m values take 1 here).Vacuum chamber
Vacuum is 5 × 10-3Pa, sedimentation rate 0.5nm/s.Structure of resonant cavity sample normal direction has been prepared in scintillator surface
Transmission spectrum, as shown in figure 3, its transmission peak value is located at 410nm, show the optical property and design requirement of structure of resonant cavity prepared
Unanimously.Angle dependency transmission spectrum, as shown in Figure 4, the results showed that its transmission is concentrated mainly in the angle of normal direction ± 20 °, is shown
Show strong directionality ability of regulation and control.Then, five faces other to scintillator carry out the preparation of reflectance coating, are coated in this example
Polytetrafluoroethylene (PTFE) diffusing reflection layer.Using excitation of X-rays sample, X ray is incident from the bottom of sample, and spy is used as using photomultiplier
Survey device and passage of scintillation light received in front of the structure of resonant cavity, change detector and the angle in sample normal direction, obtain sample it is luminous with
The dependence of angle change, as shown in Figure 5.Small 3 orders of magnitude of the thickness ratio scintillator in the reflecting layer of sample bottom itself, can
It can be ignored with thinking that its absorption to X ray is very faint.In order to more fully illustrate the effect of resonant cavity, simultaneously
The reference sample for being not covered with resonant cavity is measured, it is also same except exiting surface, remaining five face for the ease of contrast, reference sample
Sample has coated reflecting layer.
Embodiment 2：
This example uses the Bi that scintillator produces for Shanghai Xi Kasi companies4Ge3O12Scintillator, the middle cardiac wave of its flashing
A length of 480nm, the scintillator size of selection is 5x5x2cm3.Reflectance coating uses silver-plated emission layer.Surface resonance cavity configuration selects
Take SiO2For low-index material, TiO is chosen2For high-index material, wherein top mirror is by five couples of SiO2And TiO2Cycle
Alternating structure is formed, and bottom mirror is by six couples of SiO2And TiO2Cycle alternating structure is formed, and forms the SiO of speculum2And TiO2
Physical thickness λ/4n be respectively 82.2 and 48.0nm, intermediate layer is by TiO2Form, its physical thickness m λ/2n are 288.0nm (these
In m values take 3).Resonant cavity knot is prepared using using electron beam evaporation technique, its process is same as Example 1.With photon resonance
The angle dependency transmission spectrum of scintillation component of cavity configuration is as shown in Figure 6, the results showed that its transmission is concentrated mainly on normal direction
In ± 10 ° of angles.The effect of its directionality is higher than embodiment 1, is primarily due to the SiO used2And TiO2To refractive index contrast more
Height, while the cycle logarithm that top and bottom Bragg mirror uses is more, therefore have the regulation and control of more preferable directionality.Then
Using the method for electron beam evaporation again, thickness is coated with remaining five face is 2 microns of silverskin as reflectance coating.X ray swashs
The luminous angular distribution of the scintillator with structure of resonant cavity and reference sample is given as shown in fig. 7, as a result showing that its transmission is led
Concentrate in the angle of normal direction ± 10 °.
Embodiment 3
Directional transmissions scintillation component based on surface resonance cavity configuration, including scintillator, are arranged in scintillator exiting surface
Planar resonant chamber, be arranged in the reflectance coating of scintillator remaining surface.
Wherein, planar resonant chamber is prepared using magnetron sputtering technique, including the bottom cloth set gradually from bottom to top
Glug speculum, intermediate layer and top Bragg mirror.If bottom dbr mirror and top Bragg mirror by
Dry that two kinds of transparent dielectric materials with high low-refraction are alternately formed, the logarithm of bottom dbr mirror is more than top cloth
The logarithm of glug speculum, the thickness of every layer of dielectric material is λ/4n, and wherein λ is the luminous centre wavelength of scintillator, and n is corresponding
The refractive index of transparent dielectric material, intermediate layer are saturating for the high refractive index transparent dielectric material in Bragg mirror or low-refraction
Bright dielectric material, the thickness in intermediate layer is m λ/2n, m 2.In the present embodiment, bottom dbr mirror is by 5 pairs of alternating structures
SiN layer and MgF2Layer form, top Bragg mirror by 3 pairs of alternating structures SiN layer and MgF2Layer is formed.
Scintillator is the block with millimeter or cm size, and the present embodiment is using ZnO scintillators.Reflectance coating is
Polytetrafluoroethylene (PTFE) diffusing reflection coating, prepared using Typical spray technology.
Embodiment 4
Directional transmissions scintillation component based on surface resonance cavity configuration, including scintillator, are arranged in scintillator exiting surface
Planar resonant chamber, be arranged in the reflectance coating of scintillator remaining surface.
Wherein, planar resonant chamber is prepared using electron beam evaporation technique, including the bottom set gradually from bottom to top
Bragg mirror, intermediate layer and top Bragg mirror.Bottom dbr mirror and top Bragg mirror by
Some that two kinds of transparent dielectric materials with high low-refraction are alternately formed, the logarithm of bottom dbr mirror is more than top
The logarithm of Bragg mirror, the thickness of every layer of dielectric material is λ/4n, and wherein λ is the luminous centre wavelength of scintillator, and n is pair
The refractive index of transparent dielectric material is answered, intermediate layer is the high refractive index transparent dielectric material or low-refraction in Bragg mirror
Transparent dielectric material, the thickness in intermediate layer is m λ/2n, m 3.In the present embodiment, bottom dbr mirror is alternately tied by 6 Duis
The Ta of structure2O5Layer and CaF2Layer form, top Bragg mirror by 4 pairs of alternating structures Ta2O5Layer and CaF2Layer is formed.
Scintillator is the block with millimeter or cm size, and the present embodiment is using NaI:Tl scintillators.Reflection applies
Layer is golden film specular layer, is prepared using electron beam evaporation technique.
Claims (8)
1. the directional transmissions scintillation component based on surface resonance cavity configuration, it is characterised in that the device includes
Scintillator,
The planar resonant chamber of scintillator exiting surface is arranged in,
The reflectance coating of scintillator remaining surface is arranged in,
Described planar resonant chamber includes bottom dbr mirror, intermediate layer and the top Prague set gradually from bottom to top
Speculum；
Described bottom dbr mirror and top Bragg mirror are by some saturating to two kinds with high low-refraction
Bright dielectric material is alternately formed, and the logarithm of bottom dbr mirror is more than the logarithm of top Bragg mirror, every layer of medium
The thickness of material is λ/4n, and wherein λ is the luminous centre wavelength of scintillator, and n is the refractive index of corresponding transparent dielectric material, bottom
The reflectivity of Bragg mirror is higher than the reflectivity of top Bragg mirror,
Described intermediate layer is the high refractive index transparent dielectric material or low-refraction transparent dielectric material in Bragg mirror,
The thickness in intermediate layer is m λ/2n, and m is the integer between 1 and 3.
2. the directional transmissions scintillation component according to claim 1 based on surface resonance cavity configuration, it is characterised in that institute
The high refractive index transparent dielectric material stated is selected from TiO2, SiN or Ta2O5In one kind, described low-refraction transparent dielectric material
Selected from SiO2、MgF2Or CaF2In one kind.
3. the directional transmissions scintillation component based on surface resonance cavity configuration according to any one of claim 1-2, its
It is characterised by, described planar resonant chamber is prepared using magnetron sputtering, electron beam evaporation or thermal evaporation techniques.
4. the directional transmissions scintillation component according to claim 1 based on surface resonance cavity configuration, it is characterised in that institute
The scintillator stated is the block with millimeter or cm size.
5. the directional transmissions scintillation component based on surface resonance cavity configuration according to claim 1 or 4, its feature exist
In described scintillator is selected from plastic scintillant, glass scintillator, ZnO scintillators, Lu2SiO5:Ce scintillators, (Lu, Y)2SiO5:Ce scintillators, Bi4Ge3O12Scintillator, Y3Al5O12:Ce scintillators, CsI:Tl scintillators, NaI:Tl scintillators or PbWO4
One kind in scintillator.
6. the directional transmissions scintillation component according to claim 1 based on surface resonance cavity configuration, it is characterised in that institute
The reflectance coating stated is diffusing reflection coating or mirror face reflection coating.
7. the directional transmissions scintillation component according to claim 6 based on surface resonance cavity configuration, it is characterised in that institute
The material that the diffusing reflection coating stated uses is MgO, BaSO4Or one kind in polytetrafluoroethylene (PTFE), prepared using Typical spray technology.
8. the directional transmissions scintillation component according to claim 6 based on surface resonance cavity configuration, it is characterised in that institute
The mirror face reflection coating stated selects silverskin, aluminium film or golden film according to scintillator emission wavelength, using magnetron sputtering, electron beam evaporation
Or prepared by thermal evaporation coating technique.
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| CN106249272A (en) * | 2016-10-18 | 2016-12-21 | 山西中辐核仪器有限责任公司 | A kind of device collecting plastic scintillant fluorescent photon |
| CN106772538B (en) * | 2016-11-22 | 2019-03-01 | 同济大学 | A kind of scintillator regulated and controled using period metal structure |
| CN107134536B (en) * | 2017-05-10 | 2019-03-01 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and its manufacturing method, display panel, display device |
| CN112799118B (en) * | 2020-12-30 | 2024-04-26 | 西北核技术研究所 | Scintillation detector capable of improving detection efficiency and detection method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7236664B2 (en) * | 2003-09-29 | 2007-06-26 | California Institute Of Technology | Replica micro-resonator and method of fabrication |
| CN101779145A (en) * | 2007-08-22 | 2010-07-14 | 皇家飞利浦电子股份有限公司 | Be used for improving reverberator and the optical collimator layout that scintillation detector light is collected |
| CN104035121A (en) * | 2014-06-25 | 2014-09-10 | 同济大学 | Planar micro-cavity scintillator device with highly directional transmission |
-
2015
- 2015-09-08 CN CN201510566346.2A patent/CN105137472B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7236664B2 (en) * | 2003-09-29 | 2007-06-26 | California Institute Of Technology | Replica micro-resonator and method of fabrication |
| CN101779145A (en) * | 2007-08-22 | 2010-07-14 | 皇家飞利浦电子股份有限公司 | Be used for improving reverberator and the optical collimator layout that scintillation detector light is collected |
| CN104035121A (en) * | 2014-06-25 | 2014-09-10 | 同济大学 | Planar micro-cavity scintillator device with highly directional transmission |
Non-Patent Citations (3)
| Title |
|---|
| Novel resonant cavity-enhanced absorber structures for high-efficiency midinfrared photodetector application;Moshe Zohar等;《Journal of Nanophotonics》;20111231;第5卷;第058124-1至051824-15页 * |
| Resonance Cavity Enchanced Midinfrared Photodetectors Employing Subwavelength Grating;M.Zohar等;《NUSOD》;20111231;第25-26页 * |
| 闪烁体与光子人工微结构;刘波等;《物理》;20141231;第43卷(第4期);第254-262页 * |
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