CN105136049A - Optical measurement method used for material thickness of semiconductor device - Google Patents
Optical measurement method used for material thickness of semiconductor device Download PDFInfo
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- CN105136049A CN105136049A CN201510523492.7A CN201510523492A CN105136049A CN 105136049 A CN105136049 A CN 105136049A CN 201510523492 A CN201510523492 A CN 201510523492A CN 105136049 A CN105136049 A CN 105136049A
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Abstract
The invention discloses an optical measurement method used for material thickness of a semiconductor device, comprising steps of vertically radiating the a semiconductor member positioned in the atmosphere through focused laser, vertically moving the semiconductor member, regulating the laser focused planes and moving the laser focused planes to the upper surface and the lower surface of the semiconductor member, enabling the reflection light produced by two surfaces to form clear facula imaging after reception of a CCD camera, recording heights of two positions which are a height 1 and a height 2, using a formula h=n*delta Z to calculate the thickness h of the semiconductor device, wherein n shows the material refractive index of the semiconductor device, and the delta Z=H1-H2. The above optical measurement method uses the theory that light has strong reflection at the interface between different materials. In the measurement, the focal planes of the focused light beam on two interfaces of the material to be detected to obtain the focal light beam positioning distance delta Z, so that the thickness of the measurement to be detected is calculated without adding of the film thickness measurement device. The invention realizes the on-site original spot measurement of the material thickness and reduces the measurement cost.
Description
Technical field
The present invention relates to the field of measuring technique of semiconductor device material parameter, be specifically related to a kind of measuring method for semiconductor device material thickness.
Background technology
The laser microbeam focused on can interact with semiconductor devices, comprise with the application that this technology can realize: for the photo emissions microscope of failure analysis, scanning light beam technology and confocal laser scanning microscope, CLSM, for the crypto chip laser strikes Security Testing technology of direct fault location, for pul sed laser simulation single particle effect and the transient state dose rate effect experimental technique of the test of device Radiation hardness.A common trait of above-mentioned application is that the laser microbeam focused on needs through device substrate material or front passivation layer, and the specific region being positioned device inside just can complete experimental test.In the mechanism of light and material, include the reflection at device material surface and interface place, the energy attenuation etc. that light causes through material.For convenience of laser focusing microbeam is positioned device assigned address, and the laser energy value of appointed area can be obtained, need the thickness of clear and definite device material.
For the measuring method of device material thickness, be comparatively proven technique means in current fields of measurement, the most frequently used is utilize film thickness instrument to measure.Its basic principle is the thickness measure utilizing the principle of interference of light to carry out measured material, has higher accuracy for the device measuring through measurement and calibration.But consider that there is film thickness measuring equipment not all testing ground, and there is the higher problem of measurement cost, make above-mentioned measuring method be difficult to apply.
Summary of the invention
The object of the invention is to, adopting the cost of film thickness instrument measurement semiconductor device material thickness higher for solving in prior art, being difficult to the technical matters implemented, a kind of measuring method for semiconductor device material thickness is provided.Utilize this measuring method can realize the situ measurement of material thickness, reduce measurement cost.
For achieving the above object, the invention provides a kind of measuring method for semiconductor device material thickness, comprise the following steps:
Step 1) irradiate by the laser vertical focused on the semiconductor devices being placed in air;
Step 2) vertical mobile semiconductor devices, with the upper surface regulating the focussing plane of laser to move to semiconductor devices, after the reflected light that its upper surface is produced is received by CCD camera, form hot spot imaging clearly, then record the height h of semiconductor devices
2;
Step 3) continue vertical mobile semiconductor devices, with the lower surface regulating the focussing plane of laser to move to semiconductor devices, form hot spot imaging clearly after the reflected light that its lower surface is produced is received by CCD camera, then record the height h of semiconductor devices
1;
Step 4) utilize formula h=n Δ Z to calculate the thickness h of semiconductor devices, wherein n represents the Refractive Index of Material of semiconductor devices, Δ Z=h
1-h
2.
As the further improvement of technique scheme, the laser of described focusing can adopt laser focusing microbeam.
A kind of measuring method advantage for semiconductor device material thickness of the present invention is:
Measuring method of the present invention utilizes light to have stronger principle of reflection in the interface of different materials, during measurement, the focal plane of focused beam is positioned respectively two interfaces of measured material, draw focused beam orientation distance Δ Z, at foundation h=n Δ Z formula, wherein n is the refractive index of measured material, calculates the thickness h of measured material, without the need to increasing film thickness measuring equipment, the situ measurement of material thickness can be realized, reduce measurement cost.
Accompanying drawing explanation
Fig. 1 is a kind of measuring method process flow diagram for semiconductor device material thickness of the present invention.
Fig. 2 is the measuring method principle of operation figure for semiconductor device material thickness of the present invention.
Fig. 3 is the structural drawing of the optical measuring system implementing measuring method of the present invention.
Embodiment
Below in conjunction with drawings and Examples, a kind of measuring method for semiconductor device material thickness of the present invention is described in detail.
As shown in Figure 1, a kind of measuring method for semiconductor device material thickness of the present invention, comprises the following steps:
Step 1) irradiate by the laser vertical focused on the semiconductor devices being placed in air;
Step 2) vertical mobile semiconductor devices, with the upper surface regulating the focussing plane of laser to move to semiconductor devices, after the reflected light that its upper surface is produced is received by CCD camera, form hot spot imaging clearly, then record the height h of semiconductor devices
2;
Step 3) continue vertical mobile semiconductor devices, with the lower surface regulating the focussing plane of laser to move to semiconductor devices, form hot spot imaging clearly after the reflected light that its lower surface is produced is received by CCD camera, then record the height h of semiconductor devices
1;
Step 4) utilize formula h=n Δ Z to calculate the thickness h of semiconductor devices, wherein n represents the Refractive Index of Material of semiconductor devices, Δ Z=h
1-h
2.
Embodiment one
Present embodiment is to measure the silicon substrate material thickness of silicon-based devices, implement the optical measuring system of above-mentioned measuring method as shown in Figure 3, comprise: complete the optical mirror slip assembly that the saturating anti-mirror of incident beam light splitting or other optical device have, microcobjective, imaging CCD camera, sample and manual or electronic transfer table.Saturating anti-mirror is used for importing, the transmittance and reflectance of light beam, microcobjective is used for focusing on light beam, CCD camera forms hot spot imaging after receiving reflected light, and transfer table is for recording focussing plane at the height of specimen of sample lower surface and the height of specimen focusing on sample upper surface.
Semiconductor device material thickness measure equipment used to complete the device that laser microbeam focuses on, and must comprise the CCD camera that can be used for reflected light imaging, and precision that can be used for moving in the Z-axis direction sample reaches the transfer table of micron.
Above-mentioned optical measuring system is utilized to implement measuring method of the present invention, its principle of operation as shown in Figure 2, first the focussing plane of laser microbeam is positioned the upper surface that silicon substrate material contacts with air, only having the focussing plane of laser to occur at upper surface place when reflection causes light beam to return CCD just can imaging, and the reflected light now produced due to upper surface can form hot spot imaging in CCD camera.Then, utilize transfer table to regulate the focussing plane of laser microbeam at material internal, because the lower surface of silicon substrate material also exists reflex, therefore focussing plane is adjusted to lower surface position, now CCD camera also can forms hot spot imaging clearly.Meanwhile, the height h of silicon substrate material when focussing plane lays respectively at silicon substrate material lower surface and upper surface is recorded
1and h
2.
By the height h of twice silicon substrate material
1and h
2, draw focused beam orientation distance h
1-h
2=Δ Z, obtaining the thickness h of semiconductor devices according to h=n Δ Z formulae discovery, wherein n is the refractive index of measured material.Namely above-mentioned formula is the definition of light path, refers in fact under the condition of same propagation time, and the distance that light is propagated in media as well is converted into the corresponding distance that light propagates in a vacuum.Numerically, light path equals medium refraction index and is multiplied by the distance that light propagates in media as well, i.e. focused beam orientation distance h
1-h
2=Δ Z, the refractive index n being multiplied by material obtains the distance h=n Δ Z that light is propagated in atmosphere.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted.Although with reference to embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, modify to technical scheme of the present invention or equivalent replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (2)
1. for a measuring method for semiconductor device material thickness, it is characterized in that, comprising:
Step 1) irradiate by the laser vertical focused on the semiconductor devices being placed in air;
Step 2) vertical mobile semiconductor devices, with the upper surface regulating the focussing plane of laser to move to semiconductor devices, after the reflected light that its upper surface is produced is received by CCD camera, form hot spot imaging clearly, then record the height h of semiconductor devices
2;
Step 3) continue vertical mobile semiconductor devices, with the lower surface regulating the focussing plane of laser to move to semiconductor devices, form hot spot imaging clearly after the reflected light that its lower surface is produced is received by CCD camera, then record the height h of semiconductor devices
1;
Step 4) utilize formula h=n Δ Z to calculate the thickness h of semiconductor devices, wherein n represents the Refractive Index of Material of semiconductor devices, Δ Z=h
1-h
2.
2. the measuring method for semiconductor device material thickness according to claim 1, is characterized in that, the laser of described focusing can adopt laser focusing microbeam.
Priority Applications (1)
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|---|---|---|---|
| CN201510523492.7A CN105136049A (en) | 2015-08-24 | 2015-08-24 | Optical measurement method used for material thickness of semiconductor device |
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| CN201510523492.7A CN105136049A (en) | 2015-08-24 | 2015-08-24 | Optical measurement method used for material thickness of semiconductor device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105890528A (en) * | 2016-04-01 | 2016-08-24 | 武汉华星光电技术有限公司 | Water glue thickness measuring method |
| CN114280007A (en) * | 2021-11-24 | 2022-04-05 | 中国科学院福建物质结构研究所 | Device and method for testing refractive index of optical material |
| CN114324186A (en) * | 2021-11-24 | 2022-04-12 | 中国科学院福建物质结构研究所 | Optical material birefringence testing device and testing method |
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| US7283256B2 (en) * | 2004-09-21 | 2007-10-16 | Chapman Instruments, Inc. | Method and apparatus for measuring wafer thickness |
| CN101509828A (en) * | 2009-03-06 | 2009-08-19 | 北京理工大学 | Differential confocal-low coherent interference combination refractivity and thickness measurement method and apparatus |
| CN202041181U (en) * | 2011-03-24 | 2011-11-16 | 中国地质大学北京 | Device for measuring thickness of thin film |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7283256B2 (en) * | 2004-09-21 | 2007-10-16 | Chapman Instruments, Inc. | Method and apparatus for measuring wafer thickness |
| CN101509828A (en) * | 2009-03-06 | 2009-08-19 | 北京理工大学 | Differential confocal-low coherent interference combination refractivity and thickness measurement method and apparatus |
| CN202041181U (en) * | 2011-03-24 | 2011-11-16 | 中国地质大学北京 | Device for measuring thickness of thin film |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105890528A (en) * | 2016-04-01 | 2016-08-24 | 武汉华星光电技术有限公司 | Water glue thickness measuring method |
| CN105890528B (en) * | 2016-04-01 | 2018-12-07 | 武汉华星光电技术有限公司 | A kind of measurement method of glue thickness |
| CN114280007A (en) * | 2021-11-24 | 2022-04-05 | 中国科学院福建物质结构研究所 | Device and method for testing refractive index of optical material |
| CN114324186A (en) * | 2021-11-24 | 2022-04-12 | 中国科学院福建物质结构研究所 | Optical material birefringence testing device and testing method |
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Application publication date: 20151209 |