CN105132924A - Surface treatment method of aluminum-silicon alloy box - Google Patents
Surface treatment method of aluminum-silicon alloy box Download PDFInfo
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- CN105132924A CN105132924A CN201510568567.3A CN201510568567A CN105132924A CN 105132924 A CN105132924 A CN 105132924A CN 201510568567 A CN201510568567 A CN 201510568567A CN 105132924 A CN105132924 A CN 105132924A
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Abstract
An aluminum-silicon alloy encapsulating box is an important component of a radar microwave assembly and performs mechanical support, signal transmission, and protection of a heat-dissipating channel, a chip and a substrate, etc. The surface of the aluminum-silicon alloy box is generally plated with nickel and gold layers in order to meet the requirements on electric conducting, welding and sealing of the box, and the quality of the plated layers on the surface of the box is important to the performances of the whole microwave assembly. The invention relates to a method for treating the surface of an aluminum-silicon microwave assembly box by chemically plating a nickel film layer, electroplating a nickel film layer and electroplating a gold film layer. According to the treatment method, the steps of thermal treatment and removing of oxidation layer are carried out for the first time after the chemical nickel plating is carried out during treating and plating the surface of the aluminum-silicon alloy box, and thus the manufactured box has the effect that the electroplated nickel and gold film layers are free of color change and bubbling while being roasted for 15 minutes at the temperature of 300 DEG C.
Description
Technical field
The present invention relates to the technical field of surface of the microwave components box body that aluminum silicon alloy material is made, particularly the surface treatment method of a kind of chemical nickel plating of aluminum silicon alloy box body, electronickelling, electrogilding.
Background technology
Along with microwave components is to high-power, miniaturization, lightweight, high-performance future development, require that the Package boxes supporting with electronic devices and components has the thermal expansivity mated with silicon, higher thermal conductivity and lower density.Aluminum silicon alloy material is a kind of desirable electronic package material, and aluminum silicon alloy Package boxes is the important component part of radar microwave assembly, plays the vital role such as mechanical support, Signal transmissions, heat dissipation channel, chip and substrate protection.In order to the requirement meeting its conduction, welding and seal, generally carry out nickel plating and gold-plated process to its surface, therefore the overall performance of aluminum silicon alloy box surface quality of coating to microwave components is extremely important.
Domestic aluminum silicon alloy material, due to melting forming technique Shortcomings, causes with Conventional surface treatment nickel plating, Jin Hou, and more than 180 DEG C coating when welding will bubble in a large number, avalanche.
Summary of the invention
For the above-mentioned deficiency of prior art, the present invention is first in the overlay coating treating processes of aluminum silicon alloy box body, after chemical nickel plating, introduce thermal treatment and removing oxide layer step, thus reach make to make thus box body electronickelling, after gold through the nondiscoloration of 300 DEG C of baking 15min retes, bubble-tight effect.
The implementation step of the surface treatment method of aluminum silicon alloy box body of the present invention is followed successively by: box body pre-treatment, chemical nickel plating, thermal treatment, removing oxide layer, electronickelling, electrogilding.Through above-mentioned process gold-plated after box body welding temperature can reach 300 DEG C, thus improve box body and weld reliability with the temperature step of substrate, connector, chip etc.
Preferred described box body pretreatment process is: first use acetone ultrasonic cleaning box body 10-20min, pure water rinsing 30-50s, ultrasonic alkali cleaning 30-60s, ultrasonic washing 1-2min, ultrasonic pickling 20-40s, ultrasonic washing 15-40min, ultrasonic frequency is 39.9KHz, power 900W.
Preferred described nickel process is: in chemical nickel-plating solution, plate 80-100min, afterwards with the pure water rinsing 1-2min of flowing, dewaters afterwards.Dehydration can adopt dehydration of alcohol method.
Preferred described heat treatment process is: box body dehydration be placed on be full of not with the gas of nickel reactant as 250-350 DEG C of thermal treatment 1-2 hour in the baking oven of nitrogen, argon gas or vacuum atmosphere, take out after naturally cooling to room temperature.
Preferred described removing oxide layer is: by box body rinsing 1-2min in diluted acid is as dilute hydrochloric acid or dust technology, prevent nickel dam by sour excessive corrosion, afterwards with the pure water rinsing 1-2min of flowing.
Preferred described electronickelling process is: in nickel plating solution, plate 5-10min, afterwards with the pure water rinsing 1-2min of flowing.
Preferred described electrogilding process is: in gold-plating solution, plate 30-50s, afterwards with the pure water rinsing 1-2min of flowing, then dries up with nitrogen after dehydration of alcohol.
The solution used in above-described electrogilding, electronickelling, nickel process is the conventional solution that in prior art, same process uses.
Compared with prior art, beneficial effect of the present invention is as follows:
The present invention is first in the overlay coating treating processes of aluminum silicon alloy box body, thermal treatment and removing oxide layer step is introduced after chemical nickel plating, thus make the box body electronickelling that makes thus, through the nondiscoloration of 300 DEG C of baking 15min retes after gold, non-foaming, and existing treatment process nickel plating, Jin Hou, more than 180 DEG C coating when welding will bubble in a large number, avalanche, surface treatment method of the present invention makes box body welding temperature can reach 300 DEG C, thus improve box body and substrate, connector, the temperature step welding reliability of chip etc., and then also substantially increase the overall performance of radar microwave assembly.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
Embodiment one
The surface treatment method of the aluminum silicon alloy box body that the present embodiment provides is as follows:
1.40 aluminium silicon box body ultrasonic cleaning 10min in acetone, pure water rinsing 50s, ultrasonic alkali cleaning 40s, ultrasonic washing 2min, ultrasonic pickling 20s, ultrasonic washing 20min, ultrasonic frequency is 39.9KHz, power 900W;
2. 40 box bodys processed through above-mentioned steps 1 plate 80min in chemical nickel-plating solution, afterwards with the pure water rinsing 2min of flowing;
3. to be placed in the baking oven being full of nitrogen 350 DEG C of thermal treatments 1 hour through 40 box bodys dehydration of above-mentioned process, to take out after naturally cooling to room temperature;
4. through 40 box bodys rinsing 2min in dilute hydrochloric acid of above-mentioned process, afterwards with the pure water rinsing 2min of flowing;
5. 40 box bodys through above-mentioned process plate 5min in nickel plating solution, afterwards with the pure water rinsing 1min of flowing;
6. 40 box bodys through above-mentioned process plate 30s in gold-plating solution, and afterwards with the pure water rinsing 1min of flowing, then after dehydration of alcohol, nitrogen dries up.
By the aluminum silicon alloy box body of above-mentioned preparation high bake 15min in 300 DEG C of thermal station, the layer gold nondiscoloration on it, non-foaming.
Embodiment two
The surface treatment method of the aluminum silicon alloy box body that the present embodiment provides is as follows:
1.60 aluminium silicon box bodys ultrasonic cleaning 15min, pure water rinsing 50s, ultrasonic alkali cleaning 30s, ultrasonic washing 2min, ultrasonic pickling 30s, ultrasonic washing 30min in acetone simultaneously, ultrasonic frequency is 39.9KHz, power 900W;
2. 60 box bodys through above-mentioned process plate 90min in chemical nickel-plating solution, afterwards with the pure water rinsing 2min of flowing;
3. to be placed in the baking oven being full of argon gas 250 DEG C of thermal treatments 2 hours through 60 box bodys dehydration of above-mentioned process, to take out after naturally cooling to room temperature;
4. through 60 box bodys rinsing 1min in dust technology of above-mentioned process, afterwards with the pure water rinsing 2min of flowing;
5. 60 box bodys through above-mentioned process plate 5min in nickel plating solution, afterwards with the pure water rinsing 1min of flowing;
6. 60 box bodys through above-mentioned process plate 40s in gold-plating solution, and afterwards with the pure water rinsing 1min of flowing, then after dehydration of alcohol, nitrogen dries up.
By the aluminum silicon alloy box body of above-mentioned preparation high bake 15min in 300 DEG C of thermal station, the layer gold nondiscoloration on it, non-foaming.
Under the instruction of the present invention and above-described embodiment, those skilled in the art are easy to predict, cited or each raw material that exemplifies of the present invention or its equivalent alterations, each working method or its equivalent alterations can realize the present invention, and the parameter bound value of each raw material and working method, interval value can realize the present invention, do not enumerate embodiment at this.
Claims (3)
1. a surface treatment method for aluminum silicon alloy box body, is characterized in that, comprises the following steps successively: box body pre-treatment, chemical nickel plating, thermal treatment, removing oxide layer, electronickelling, electrogilding.
2. the surface treatment method of aluminum silicon alloy box body as claimed in claim 1, it is characterized in that, described heat treated temperature is 250-350 DEG C, heat-treating atmosphere be not with gas or the vacuum environment of nickel reactant, heat treatment time is 1-2 hour, makes aluminum silicon alloy box body naturally cool to room temperature after thermal treatment.
3. the surface treatment method of aluminum silicon alloy box body as claimed in claim 1, it is characterized in that, described removing oxide layer process, carry out in diluted acid, the treatment time controls at 1-2min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510568567.3A CN105132924A (en) | 2015-09-09 | 2015-09-09 | Surface treatment method of aluminum-silicon alloy box |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510568567.3A CN105132924A (en) | 2015-09-09 | 2015-09-09 | Surface treatment method of aluminum-silicon alloy box |
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| CN105132924A true CN105132924A (en) | 2015-12-09 |
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| CN201510568567.3A Pending CN105132924A (en) | 2015-09-09 | 2015-09-09 | Surface treatment method of aluminum-silicon alloy box |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862015A (en) * | 2015-12-18 | 2016-08-17 | 中国电子科技集团公司第四十研究所 | Treatment method of aluminum silicon material for double-directional electrical bridge |
| CN109457103A (en) * | 2018-11-09 | 2019-03-12 | 中国电子科技集团公司第五十五研究所 | A kind of electronic encapsulation shell lead fatigue resistance Enhancement Method |
| CN110592628A (en) * | 2019-10-24 | 2019-12-20 | 中电国基南方集团有限公司 | Coating process of silicon-aluminum composite material |
| CN114032549A (en) * | 2021-11-23 | 2022-02-11 | 山东晶导微电子股份有限公司 | Method for removing nickel on chemical nickel-plating surface of silicon wafer |
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| US20080277140A1 (en) * | 2007-04-16 | 2008-11-13 | C. Uyemura & Co., Ltd. | Electroless gold plating method and electronic parts |
| CN101711092A (en) * | 2009-04-16 | 2010-05-19 | 深圳市精诚达电路有限公司 | Direct gold plating technique adopted by flexible printed circuits |
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2015
- 2015-09-09 CN CN201510568567.3A patent/CN105132924A/en active Pending
Patent Citations (2)
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|---|---|---|---|---|
| US20080277140A1 (en) * | 2007-04-16 | 2008-11-13 | C. Uyemura & Co., Ltd. | Electroless gold plating method and electronic parts |
| CN101711092A (en) * | 2009-04-16 | 2010-05-19 | 深圳市精诚达电路有限公司 | Direct gold plating technique adopted by flexible printed circuits |
Non-Patent Citations (1)
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| 卢海燕等: ""SiCp/Al复合材料镀金工艺研究"", 《电子机械工程》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105862015A (en) * | 2015-12-18 | 2016-08-17 | 中国电子科技集团公司第四十研究所 | Treatment method of aluminum silicon material for double-directional electrical bridge |
| CN109457103A (en) * | 2018-11-09 | 2019-03-12 | 中国电子科技集团公司第五十五研究所 | A kind of electronic encapsulation shell lead fatigue resistance Enhancement Method |
| CN109457103B (en) * | 2018-11-09 | 2022-05-17 | 中国电子科技集团公司第五十五研究所 | Method for enhancing anti-fatigue strength of lead of electronic packaging shell |
| CN110592628A (en) * | 2019-10-24 | 2019-12-20 | 中电国基南方集团有限公司 | Coating process of silicon-aluminum composite material |
| CN114032549A (en) * | 2021-11-23 | 2022-02-11 | 山东晶导微电子股份有限公司 | Method for removing nickel on chemical nickel-plating surface of silicon wafer |
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Effective date of registration: 20160415 Address after: 200082 Qigihar Road, Shanghai, No. 76, No. Applicant after: Shanghai Aerospace Electronic Communication Equipment Inst. Address before: 200080 Shanghai city Hongkou District street Xingang Tianbao Road No. 881 Applicant before: Shanghai Aerospace Measurement Control Communication Institute |
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Application publication date: 20151209 |
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