CN105103324A - Method for forming organic thin film - Google Patents
Method for forming organic thin film Download PDFInfo
- Publication number
- CN105103324A CN105103324A CN201480020235.5A CN201480020235A CN105103324A CN 105103324 A CN105103324 A CN 105103324A CN 201480020235 A CN201480020235 A CN 201480020235A CN 105103324 A CN105103324 A CN 105103324A
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- CN
- China
- Prior art keywords
- organic
- semiconducting materials
- organic semiconducting
- resin base
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 164
- 239000010409 thin film Substances 0.000 title abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 164
- 239000000463 material Substances 0.000 claims abstract description 89
- 239000013078 crystal Substances 0.000 claims abstract description 44
- 239000011347 resin Substances 0.000 claims abstract description 40
- 229920005989 resin Polymers 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims description 49
- 238000003475 lamination Methods 0.000 claims description 42
- -1 aliphatic alkyl Chemical group 0.000 claims description 39
- 230000004888 barrier function Effects 0.000 claims description 35
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 28
- 239000004973 liquid crystal related substance Substances 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 19
- 230000009477 glass transition Effects 0.000 claims description 17
- 238000005098 hot rolling Methods 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 7
- 125000003545 alkoxy group Chemical group 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 230000009466 transformation Effects 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical group [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 4
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 238000009823 thermal lamination Methods 0.000 abstract 1
- 239000002585 base Substances 0.000 description 98
- 239000010408 film Substances 0.000 description 52
- 229910052760 oxygen Inorganic materials 0.000 description 48
- 239000001301 oxygen Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 25
- 230000037230 mobility Effects 0.000 description 14
- 238000000576 coating method Methods 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 11
- 239000012071 phase Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 8
- 238000007639 printing Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 238000010030 laminating Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000003960 organic solvent Substances 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- 230000001105 regulatory effect Effects 0.000 description 5
- OHZAHWOAMVVGEL-UHFFFAOYSA-N 2,2'-bithiophene Chemical compound C1=CSC(C=2SC=CC=2)=C1 OHZAHWOAMVVGEL-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- YCOZIPAWZNQLMR-UHFFFAOYSA-N heptane - octane Natural products CCCCCCCCCCCCCCC YCOZIPAWZNQLMR-UHFFFAOYSA-N 0.000 description 3
- 238000007641 inkjet printing Methods 0.000 description 3
- LQERIDTXQFOHKA-UHFFFAOYSA-N nonadecane Chemical compound CCCCCCCCCCCCCCCCCCC LQERIDTXQFOHKA-UHFFFAOYSA-N 0.000 description 3
- 239000000049 pigment Substances 0.000 description 3
- 229920000052 poly(p-xylylene) Polymers 0.000 description 3
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 3
- 229920001197 polyacetylene Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920000128 polypyrrole Polymers 0.000 description 3
- VJYJJHQEVLEOFL-UHFFFAOYSA-N thieno[3,2-b]thiophene Chemical compound S1C=CC2=C1C=CS2 VJYJJHQEVLEOFL-UHFFFAOYSA-N 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- QUTGXAIWZAMYEM-UHFFFAOYSA-N 2-cyclopentyloxyethanamine Chemical compound NCCOC1CCCC1 QUTGXAIWZAMYEM-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical compound SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- TVEHXNIZBMCSRM-UHFFFAOYSA-N [O].C(CCCCCCC)CCCCCCCCCCCC Chemical compound [O].C(CCCCCCC)CCCCCCCCCCCC TVEHXNIZBMCSRM-UHFFFAOYSA-N 0.000 description 2
- MYSPGJLWEFWHCK-UHFFFAOYSA-N [O].C(CCCCCCCCC)OCCCCCCCCCCC Chemical compound [O].C(CCCCCCCCC)OCCCCCCCCCCC MYSPGJLWEFWHCK-UHFFFAOYSA-N 0.000 description 2
- GTZOZDOTOWNSJH-UHFFFAOYSA-N [O].CCCCCCC Chemical compound [O].CCCCCCC GTZOZDOTOWNSJH-UHFFFAOYSA-N 0.000 description 2
- CVYNBVMJLPTTFD-UHFFFAOYSA-N [O].CCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCC CVYNBVMJLPTTFD-UHFFFAOYSA-N 0.000 description 2
- CTTWWHABKOXFAB-UHFFFAOYSA-N [O].CCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCC CTTWWHABKOXFAB-UHFFFAOYSA-N 0.000 description 2
- WOUIKYKNZGCTCD-UHFFFAOYSA-N [O].CCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCC WOUIKYKNZGCTCD-UHFFFAOYSA-N 0.000 description 2
- MEWQFMZMPMAMTG-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCC MEWQFMZMPMAMTG-UHFFFAOYSA-N 0.000 description 2
- PNNXBWWSFIVKQW-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCC PNNXBWWSFIVKQW-UHFFFAOYSA-N 0.000 description 2
- FVXZXFWDTIMEMA-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCC FVXZXFWDTIMEMA-UHFFFAOYSA-N 0.000 description 2
- CIGIRZIOSVQVKQ-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCC CIGIRZIOSVQVKQ-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 150000001555 benzenes Chemical class 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- LLCSWKVOHICRDD-UHFFFAOYSA-N buta-1,3-diyne Chemical group C#CC#C LLCSWKVOHICRDD-UHFFFAOYSA-N 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 2
- 125000006232 ethoxy propyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 125000005448 ethoxyethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])C([H])([H])* 0.000 description 2
- 125000005745 ethoxymethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])* 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000002240 furans Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- FNAZRRHPUDJQCJ-UHFFFAOYSA-N henicosane Chemical compound CCCCCCCCCCCCCCCCCCCCC FNAZRRHPUDJQCJ-UHFFFAOYSA-N 0.000 description 2
- BJQWYEJQWHSSCJ-UHFFFAOYSA-N heptacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCC BJQWYEJQWHSSCJ-UHFFFAOYSA-N 0.000 description 2
- NDJKXXJCMXVBJW-UHFFFAOYSA-N heptadecane Chemical compound CCCCCCCCCCCCCCCCC NDJKXXJCMXVBJW-UHFFFAOYSA-N 0.000 description 2
- YDLYQMBWCWFRAI-UHFFFAOYSA-N hexatriacontane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCCC YDLYQMBWCWFRAI-UHFFFAOYSA-N 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- 150000002475 indoles Chemical class 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 125000001802 myricyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 125000006608 n-octyloxy group Chemical group 0.000 description 2
- IGGUPRCHHJZPBS-UHFFFAOYSA-N nonacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCCCCC IGGUPRCHHJZPBS-UHFFFAOYSA-N 0.000 description 2
- RZJRJXONCZWCBN-UHFFFAOYSA-N octadecane Chemical compound CCCCCCCCCCCCCCCCCC RZJRJXONCZWCBN-UHFFFAOYSA-N 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- YKNWIILGEFFOPE-UHFFFAOYSA-N pentacosane Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCC YKNWIILGEFFOPE-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001088 polycarbazole Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 2
- BGHCVCJVXZWKCC-UHFFFAOYSA-N tetradecane Chemical compound CCCCCCCCCCCCCC BGHCVCJVXZWKCC-UHFFFAOYSA-N 0.000 description 2
- IIYFAKIEWZDVMP-UHFFFAOYSA-N tridecane Chemical compound CCCCCCCCCCCCC IIYFAKIEWZDVMP-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OZXIZRZFGJZWBF-UHFFFAOYSA-N 1,3,5-trimethyl-2-(2,4,6-trimethylphenoxy)benzene Chemical compound CC1=CC(C)=CC(C)=C1OC1=C(C)C=C(C)C=C1C OZXIZRZFGJZWBF-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- ZMYIIHDQURVDRB-UHFFFAOYSA-N 1-phenylethenylbenzene Chemical group C=1C=CC=CC=1C(=C)C1=CC=CC=C1 ZMYIIHDQURVDRB-UHFFFAOYSA-N 0.000 description 1
- 125000001622 2-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C(*)C([H])=C([H])C2=C1[H] 0.000 description 1
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000000175 2-thienyl group Chemical group S1C([*])=C([H])C([H])=C1[H] 0.000 description 1
- CEIIZPKJVJVUGH-UHFFFAOYSA-N CCCCCCCCCCCCCCCCCCCCCCCCC.[O] Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCC.[O] CEIIZPKJVJVUGH-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004697 Polyetherimide Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 241000251778 Squalus acanthias Species 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- NFFUVBLJZISNAV-UHFFFAOYSA-N [O].C(CCCCCCCCC)CCCCCCCCCCCCCC Chemical compound [O].C(CCCCCCCCC)CCCCCCCCCCCCCC NFFUVBLJZISNAV-UHFFFAOYSA-N 0.000 description 1
- MNKNLPPKUOUFGP-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCCCCCC MNKNLPPKUOUFGP-UHFFFAOYSA-N 0.000 description 1
- DYFJGGZYTVOVPO-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCCCCCCC DYFJGGZYTVOVPO-UHFFFAOYSA-N 0.000 description 1
- OCSQRKJVZQZEFM-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCCCCCCCCCC OCSQRKJVZQZEFM-UHFFFAOYSA-N 0.000 description 1
- HGWZQDOMAJEINX-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCCCCCCCCCCC HGWZQDOMAJEINX-UHFFFAOYSA-N 0.000 description 1
- VQQYGFNDKUNVHH-UHFFFAOYSA-N [O].CCCCCCCCCCCCCCCCCCCCCCCCCCCC Chemical compound [O].CCCCCCCCCCCCCCCCCCCCCCCCCCCC VQQYGFNDKUNVHH-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 125000002490 anilino group Chemical class [H]N(*)C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 125000005428 anthryl group Chemical group [H]C1=C([H])C([H])=C2C([H])=C3C(*)=C([H])C([H])=C([H])C3=C([H])C2=C1[H] 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000001545 azulenes Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 244000139794 beach naupaka Species 0.000 description 1
- 125000002511 behenyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 125000002592 cumenyl group Chemical group C1(=C(C=CC=C1)*)C(C)C 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- QFWWKJJQZCWKPL-UHFFFAOYSA-N dithiazine Chemical class S1SN=CC=C1 QFWWKJJQZCWKPL-UHFFFAOYSA-N 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 125000000755 henicosyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- NLAGNNORBYGNAV-UHFFFAOYSA-N isotriacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCC(C)C NLAGNNORBYGNAV-UHFFFAOYSA-N 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 125000002463 lignoceryl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- DZVCFNFOPIZQKX-LTHRDKTGSA-M merocyanine Chemical compound [Na+].O=C1N(CCCC)C(=O)N(CCCC)C(=O)C1=C\C=C\C=C/1N(CCCS([O-])(=O)=O)C2=CC=CC=C2O\1 DZVCFNFOPIZQKX-LTHRDKTGSA-M 0.000 description 1
- SHOJXDKTYKFBRD-UHFFFAOYSA-N mesityl oxide Natural products CC(C)=CC(C)=O SHOJXDKTYKFBRD-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000001617 migratory effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 125000002819 montanyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- VAMFXQBUQXONLZ-UHFFFAOYSA-N n-alpha-eicosene Natural products CCCCCCCCCCCCCCCCCCC=C VAMFXQBUQXONLZ-UHFFFAOYSA-N 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000002465 nonacosyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 150000004893 oxazines Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000015 polydiacetylene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920006389 polyphenyl polymer Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920001021 polysulfide Polymers 0.000 description 1
- 239000005077 polysulfide Substances 0.000 description 1
- 150000008117 polysulfides Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000004892 pyridazines Chemical class 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 235000021003 saturated fats Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002469 tricosyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002221 trityl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C([*])(C1=C(C(=C(C(=C1[H])[H])[H])[H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000002061 vacuum sublimation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6576—Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
Abstract
The purpose of the present invention is to provide a method for forming an organic semiconductor thin film, which is crystal grown in a certain direction, by a simple process. A method for forming an organic thin film of an organic semiconductor material between two resin bases, which comprises a step wherein one resin base on which the organic semiconductor material is arranged and the other resin base are bonded with each other by being pressed using a thermal lamination method.
Description
Technical field
The organic semiconductor device that the present invention relates to the formation method of organic semiconductor thin-film and the manufacture method of organic semiconductor device and obtained by these methods.
Background technology
By forming the film of organic semiconducting materials and the method obtaining organic semiconductor device can be implemented by low temperature process between electrode, and can make there is flexibility, not fragile and lightweight device, therefore be actively studied in recent years.
But the organic compound majority being used as organic semiconducting materials is insoluble in organic solvent in the past, therefore can not use the method that coating, printing etc. are cheap, the vacuum vapour deposition etc. that general use cost is higher makes film-shaped be formed on semiconductor substrate.Recently, in the production process of scene effect transistor, actively carry out by using the method expecting the printing process such as ink-jet, soft version, coating manufacturing the large field-effect transistor of area with low cost, high productive capacity, form organic film and obtain the research of organic semiconductor device, the device with higher carrier mobility can be obtained.
But present situation it is possible to manufacture that carrier mobility is high by using the coating/typography of organic semiconducting materials and the method for the field-effect transistor of excellent durability is not yet practical.The formation of organic film is generally by taking vacuum vapour deposition as the vacuum technology of representative or using the coating process such as spin-coating method, scraper for coating method of solvent to be formed, but the former is except the equipment needed for carrying out vacuum technology, also has the shortcoming that spillage of material is many.The latter is also the same with vacuum technology because coating whole substrate, and spillage of material is many.Although the material of requirement can be coated target location by the print processes such as ink-jet method, but be coated with other/print process is identical, in order to control the direction of crystal orientation, the method making crystal from solution needs the process etc. of critically control temperature, atmosphere, coated face.Therefore, in the manufacture method of these devices, the film forming of organic semiconductor layer has consuming time, that production capacity is not high shortcoming.In addition, present situation is, about device performances such as mobilities towards practical insufficient.
As one of reason that can not be practical, can enumerate the state of organic semiconducting materials according to organic films such as the crystal boundary between polycrystalline, crystal orientation controls, the characteristic of transistor significantly changes.As using the device making method that there is not the monocrystalline of crystal boundary, monocrystalline manufacture method based on vapor phase method has been shown in non-patent literature 1, in patent documentation 1, tilted substrates be shown and controlled the method that crystal grows from solutions of organic semiconductors to certain orientation, the manufacture method of the monocrystalline organic semiconductor thin-film based on two ink-jet method has been shown in patent documentation 2.But vapor phase method is when being applied to actual manufacture with difficulty, and the method medium dip substrate of tilted substrates itself is very difficult.In addition, in two ink-jet method, the difficulty that solvent is selected or need dry control, has any problem having environment in the use of the solvent of negative effect or the high organic semi-conductor manufacture method of production capacity.And, as the crystal orientation method beyond monocrystalline, disclosing in patent documentation 3 grade coats in alignment films by the organic semiconducting materials of liquid crystal liquid crystal property, utilize liquid crystal to move and carry out the method etc. of orientation, but due to the phase transformation in cooling procedure, likely crack between crystal, need the temperature of precise hard_drawn tuhes cooling procedure.Describe in non-patent literature 2 and be exposed in solvent vapour after forming polycrystal film, promote the method for crystal orientation thus, but need during reorientation to be exposed to for a long time in solvent, be not suitable for being applied to roller to the high organic semi-conductor manufacture method of the production capacity that roller (Roll-to-Roll) is such.
Prior art document
Patent documentation
Patent documentation 1:WO2011/040155 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2012-049291 publication
Patent documentation 3: Japan Patent No. 4867168 publications
Non-patent literature
Non-patent literature 1:ScienceandTechnologyofAdvancedMaterials, 2009,10,024314.
Non-patent literature 2:APPLIEDPHYSICSLETTERS, 94,93307,2009.
Summary of the invention
Invent problem to be solved
1st object of the present invention is to provide the method being formed the organic semiconductor thin-film that crystal grows in a certain direction by easy technique.In addition, the 2nd object of the present invention is to provide manufacture the organic semiconductor device with the film that crystal grows in a certain direction method with can utilizing such formation method high productive capacity.In addition, the 3rd object of the present invention is to provide and has the organic semiconductor thin-film and the flexible organic semiconductor device of the characteristic good such as carrier mobility, flexing resistance that crystal grows in a certain direction.
For the means of dealing with problems
The present inventor etc. conduct in-depth research to solve the problem, found that and make by lamination methods the semi-conducting material crystal growth that is configured between two kinds of resin substrates, organic semiconductor thin-film and the organic semiconductor device with excellent characteristic of semiconductor and flexing resistance can be obtained thus, thus complete the present invention.
That is, the present invention is as described below.
[1] a kind of formation method of organic film, it for forming the method for the organic film of organic semiconducting materials between two resin base materials, wherein, described method comprises by using lamination methods to suppress the resin base material and another resin base material that are configured with described organic semiconducting materials and fitted.
The formation method of the organic film [2] as described in [1], wherein, when heat lamination, is set as the temperature of more than the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature or fusing point by hot-rolling portion.
The formation method of the organic film [3] as described in [1], wherein, when heat lamination, hot-rolling portion is set as the temperature of more than the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature or fusing point, after making organic semiconducting materials phase transformation, crystal is grown to the direct of travel of heat lamination.
[4] manufacture method, it is at least comprise grid, insulating barrier, source electrode between two resin base materials (i) and (ii), drain and comprise the manufacture method of flexible organic semiconductor device of organic semiconductor layer of organic semiconducting materials of more than a kind; Described manufacture method comprises by using lamination methods suppress the resin base material (i) of configuration organic semiconducting materials and another resin base material (ii) and fitted, and forms the organic semiconductor layer that crystal grows in a certain direction thus.
[5] manufacture method as described in [4], wherein, resin base material (i) comprises grid, with the insulating barrier covering the form formation of described grid and the organic semiconducting materials be configured on described insulating barrier; Resin base material (ii) comprises insulating barrier and the source electrode that is formed on described insulating barrier and drain electrode; By using lamination methods suppress resin base material (i) and resin base material (ii) and fitted, form organic semiconductor layer thus.
The manufacture method of the organic semiconductor device [6] as described in [4], wherein, organic semiconducting materials is configured on insulating barrier with solid or molten condition.
The manufacture method of the organic semiconductor device [7] as described in [4], wherein, organic semiconducting materials is coated with by solution process containing organic semiconducting materials, drying and being configured on insulating barrier.
[8] manufacture method as described in [4], wherein, when heat lamination, is set as the temperature of more than the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature or fusing point by the temperature in hot-rolling portion.
[9] manufacture method as described in [4], wherein, the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature or fusing point are lower than the glass transition temperature of resin base material (i) and (ii).
[10] manufacture method according to any one of [4] to [9], wherein, organic semiconducting materials is the compound represented with following formula (1).
In above-mentioned formula (1), X
1and X
2represent sulphur atom or selenium atom independently of one another, R
1and R
2represent hydrogen atom, aliphatic alkyl, aryl, heterocyclic radical, alkoxyl or alkoxyalkyl independently of one another, R
1and R
2can be the same or different, m and n represents 0 or 1 independently of one another.
[11] a flexible organic semiconductor device, its manufacture method according to any one of [4] to [10] is formed.
Invention effect
According to the present invention, provide the method being formed the organic film that crystal grows in a certain direction by easy technique.In addition, the method utilizing this formation method can manufacture to high productive capacity the organic semiconductor device with the organic film that crystal grows in a certain direction is provided.In addition, according to these methods, the flexible organic semiconductor device of the characteristic good such as carrier mobility, flexing resistance can be provided.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the structural form example of the OTFT of the example illustrated as organic semiconductor device of the present invention.
Fig. 2 is the schematic diagram of an example of the position that the example configuration organic semiconducting materials manufactured in organic semiconductor device of the present invention is shown.
Fig. 3 is the schematic diagram of the operation of a form example for the manufacture of organic semiconductor device of the present invention.
Fig. 4 (a) and (b) are the petrographic microscope photo of the organic film manufactured by the formation method of organic film of the present invention.
Fig. 5 is the schematic diagram that the organic semiconductor device made in the present invention carries out the V-type Method of Partitioning of bend test.
Fig. 6 illustrates that organic semiconductor device of the present invention carries out the schematic diagram of the order of bend test.
Fig. 7 is the figure of the transistor characteristic after the bend test that organic semiconductor device of the present invention is shown.
Embodiment
The present invention is described in detail.
The invention is characterized in, to be made the manufacture method being configured at the flexible semiconductor device that the organic semiconducting materials crystal growth between two kinds of resin substrates is feature and the semiconductor device obtained by the method by lamination methods.
The first object of the present invention is the organic film that the crystal growth direction of formation organic semiconducting materials is certain.
The formation method characteristic of organic film of the present invention is, by lamination methods, the resin base material and these two resin base materials of another resin base material that are configured with organic semiconducting materials are suppressed, thus the organic film that formation crystal grows in a certain direction.
In the formation method of the organic film by lamination methods of the present invention, the method using the common lamination device being crimped 2 resin base materials by hot-rolling can be enumerated, organic film of the present invention by being clamped by another resin base material of the organic semiconducting materials be configured on a resin base material, and crimps two base materials with the hot-rolling of laminater thus fits and formed.
Organic semiconducting materials is except can by except the material of the solids such as direct configuration block sprills, attritive powder, molten condition, also can be configured by the solution process (such as, being made up of solution coat, printing process and drying process etc.) of drippage rubbing method etc.When using solution process, in the stage from solution crystallization, crystal orientation can be random, also can only evaporate the organic solvent be contained in solution.Therefore, without the need to carrying out the process of the reorientation regulating crystal orientation by long heat treatment or carried out crystal by reprocessing.And the method be configured under powder, molten condition has can not the high organic solvent of environment for use load and configure the advantage of organic semiconducting materials etc.The organic semiconducting materials be configured at like this between two resin base materials forms organic semiconductor thin-film by heat lamination.
As the parameter regulated during heat lamination, be mainly enumerated as the temperature of hot-rolling, sweep speed, roll-in etc.In order to make the crystal growth direction of organic semiconducting materials certain, be preferably temperature heat roller temperature being adjusted to phase transition temperature and liquid crystal transition temperature, glass transition temperature or the fusing point exceeding organic semiconducting materials.Under described temperature conditions, phase change is produced during organic semiconducting materials contact hot-rolling, through molten condition to when crystalline state changes again, crystal can along the direct of travel of lamination, namely, generate with the carriage direction equidirectional of film, compared with the organic film obtained with common solution process, crystal intergranular not easily cracks.
The mensuration of the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature, fusing point uses differential scanning calorimeter (DSC), polarized light microscope observing (POM) melting point apparatus etc. thus can grasp transformation behavior automatically.And, for high-order structures, use X-ray diffraction (XRD) that molecular structure, liquid crystal liquid crystal property and crystalline relation can be grasped.
The setting of heat roller temperature can regulate according to the kind (phase transition temperature that namely material is intrinsic) of the organic semiconducting materials used.Phase transition temperature is preferably adjusted to the scope of 0 ~+80 DEG C.And the upper limit of temperature is preferably set to the temperature of glass transformation temperature lower than the resin base material used, the optimization according to the combination of the phase transition temperature of organic semiconducting materials and the glass transition temperature of resin base material and sweep speed.The time of contact in sweep speed pair and hot-rolling portion and rate of crystalline growth, thickness have an impact, and also depend on the specification of laminater, are generally 0.1m/ minute ~ 5m/ minute.Need to consider to regulate heat roller temperature according to sweep speed time of contact.More preferably can regulate hot-rolling portion line pressure, roller environment temperature.Line pressure regulates at need, carries out lamination between the substrate that resin base material is clipped the corrosion resistant plate of assisting as lamination etc. by the mode that also can put on two kinds of resin base materials using certain pressure.And, in order to obtain suitable crystal orientation state, the lamination operation using hot-rolling also repeatedly can be carried out.
The second object of the present invention is for providing the manufacture method of organic semiconductor device, and the 3rd object has excellent characteristic of semiconductor and flexible organic semiconductor device for providing.
Organic semiconductor device of the present invention is the structure clipping organic semiconductor layer with electrode, is not particularly limited.Preferably there is the organic transistor that the voltage control putting on by gate insulator rete another electrode being called grid when source electrode and drain electrode two electrode contact organic semiconductor layers flows in the structure of described two interelectrode electric currents.
In the form example of the organic transistor of the present invention shown in Fig. 1, each element is described.
Base material 1 and 8 is resin molding, can enumerate such as: PETG, PEN, polyether sulfone, polyamide, polyimides, Merlon, cellulose triacetate, Polyetherimide etc., in heat lamination, select according to treatment temperature.The glass transition temperature of described base material is preferably more than 100 DEG C, more preferably more than 150 DEG C.Consider the flexing resistance of organic semiconductor device, the material being preferably 2 kinds of base materials is identical, by using described resinousness base material, semiconductor device can being made to have flexibility, improve as there is the height flexibility of flexing resistance and the practicality of lightweight organic semiconductor device.The thickness of base material is generally 1 μm ~ 10mm, is preferably 5 μm ~ 3mm.
The material with conductivity is used in source electrode 5, drain electrode 6, grid 2.Can use such as: metals such as platinum, gold, silver, aluminium, chromium, tungsten, tantalum, nickel, cobalt, copper, iron, lead, tin, titanium, indium, palladium, molybdenum, magnesium, calcium, barium, lithium, potassium, sodium and comprise the alloy of described metal; InO
2, ZnO
2, SnO
2, the electroconductive oxide such as ITO; The conductive polymer compounds such as polyaniline, polypyrrole, polythiophene (PEDOT/PSS etc.), polyacetylene, poly (phenylenevinylene), polydiacetylene; The material with carbon element such as carbon nano-tube, graphite; Deng.In order to reduce the contact resistance of electrode, can adulterate molybdenum oxide or metal is carried out to the process of mercaptan etc.In addition, the conductive composite material of the metallic that is dispersed with carbon black or gold, platinum, silver, copper etc. etc. can be also used in above-mentioned material.Each electrode 2,5,6 is connected with wiring, and connecting up is made by the material substantially identical with electrode.The thickness of source electrode 5, drain electrode 6, grid 2 is different because of material, is generally 1nm ~ 10 μm, is preferably 10nm ~ 5 μm, is more preferably 30nm ~ 1 μm.
Insulating barrier 3 and 7, for having the material of insulating properties, can use such as: the polymer such as Parylene, polyacrylate, polymethyl methacrylate, polystyrene, polyvinylphenol, polyamide, polyimides, Merlon, polyester, polyvinyl alcohol, polyvinyl acetate, polyurethane, polysulfones, fluorine resin, epoxy resin, phenol resin and the copolymer combining described polymer and obtain; The oxides such as silicon dioxide, aluminium oxide, titanium oxide, tantalum oxide; SrTiO
3, BaTiO
3etc. strong dielectricity oxide; Silicon nitride, aluminum nitride and other nitride; Be dispersed with sulfide; The polymer etc. of the dielectric particles such as fluoride.Consider the flexing resistance of organic semiconductor device, insulating barrier 3 and 7 preferably uses identical material, and the thickness of described insulating barrier is different because of material, is generally 10nm ~ 10 μm, is preferably 50nm ~ 5 μm, is more preferably 100nm ~ 1 μm.
The macromolecular compound that the organic semiconducting materials that semiconductor layer 4 comprises can use the low molecular compound of performance characteristic of semiconductor as follows, number-average molecular weight is more than 1000, repetitive are any one in the oligomer of 2 ~ 20, in organic semiconducting materials, preferably there is the compound of the phase transition temperatures such as the liquid crystal transition temperature below hot lamination temperature, glass transition temperature, fusing point; More preferably during heat lamination the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature or fusing point lower than the material of the glass transition temperature of described base material.
As the semi-conducting material of semiconductor layer 4, can the independent or mixing several compounds use by the compound of performance characteristic of semiconductor as follows.For improving the characteristic of organic semiconductor device, or in order to give other characteristic, various additive can be mixed as required.The thickness of semiconductor layer 4, in the scope not losing necessary function, gets over Bao Yuehao.In organic semiconductor device, as long as have the above thickness of regulation, the characteristic of semiconductor element does not just rely on thickness, but when thickness thickens, the situation that leakage current increases is many.On the contrary, when thickness is crossed thin, the passage (raceway groove) of electric charge cannot be formed, therefore need suitable thickness.In order to the thickness making semiconductor show the semiconductor layer of necessary function is generally 1nm ~ 5 μm, be preferably 10nm ~ 1 μm, be more preferably 10nm ~ 500nm.
As the compound of performance characteristic of semiconductor used in the present invention; i.e. organic semiconductor compound; such as, the derivative [triphen two that the part that can be enumerated as the carbon of coalescence benzene class and coalescence benzene class as low molecular compound replaces with functional groups such as the atoms such as N, S, O, aryl, acyl group, alkyl, alkoxyl, carbonyls
oxazine derivatives, triphen dithiazine derivative, the thienothiophene etc. shown in above-mentioned formula (1)].Be enumerated as diphenyl ethylene derivatives, metal phthalocyanine class, Isosorbide-5-Nitrae in addition, 5,8-naphthalenetetracarbimidec imidec, N, N '-two (4-benzotrifluoride)-Isosorbide-5-Nitrae, 5,8-naphthalenetetracarbacidic acidic diimide, and N, N '-two (1H, 1H-perfluoro capryl), N, N '-two (1H, 1H-perfluoro butyl) and N, N '-dioctyl-1,4,5,8-naphthalenetetracarbacidic acidic diimide derivatives, 2,3, the naphthalenetetracarbimidec imidec class and 2 of 6,7-naphthalenetetracarbimidec imidec etc., 3, the condensed ring tetracarboxylic acid imidodicarbonic diamide classes such as anthracene tetracarboxylic acid imidodicarbonic diamide class such as 6,7-anthracene tetracarboxylic acid imidodicarbonic diamide; The pigment etc. of merocyanine pigment, half flower cyanines pigment etc.
As macromolecular compound, enumerate such as: the multi-metal polypyrrole such as polypyrrole, poly-(N-substituted azole), poly-(3-substituted azole), poly-(3,4-disubstituted pyrroles); Polythiophene, poly-(3-substituted thiophene), the poly-polythiophene class such as (3,4-bis-substituted thiophene), polyphenyl bithiophene; The polyisothianaphthene classes such as polyisothianaphthene; The polythiophene vinyl such as polythiophene ethene; Poly-(phenylenevinylene) etc. poly-(phenylenevinylene); The polyaniline compound such as polyaniline, poly-(N-substituted aniline), poly-(3-substituted aniline), poly-(2,3-substituted aniline); The polyacetylene classes such as polyacetylene; The poly-diacetylene classes such as poly-diacetylene; The poly-Azulene class such as poly-; The poly-pyrene classes such as poly-pyrene; The polycarbazole class such as polycarbazole, poly-(N-substituted carbazole); The poly-selenophen classes such as poly-selenophen; The poly-poly-furans such as furans, paracoumarone; Poly-(to the penylene) class such as poly-(to penylene); The poly-indoles such as poly-indoles; The poly-pyridazine class such as poly-pyridazine; The polysulfide ether such as polyphenylene sulfide, EOT.As oligomer, be enumerated as the oligomer with the repetitive identical with above-mentioned polymer, such as: α-six bithiophene of thiophene 6 aggressiveness, α, ω-dihexyl-α-six bithiophene, α, ω-dihexyl-α-thiophene (キ Application ケ チ オ Off ェ Application), the oligomer of α, ω-two (3-fourth oxygen propyl group)-α-six bithiophene etc.
As the example being suitable for particularly preferred compound of the invention process, the thienothiophene derivative represented with formula (1) can be enumerated.
In above-mentioned formula (1), X
1and X
2represent sulphur atom or selenium atom independently of one another, R
1and R
2represent hydrogen atom, aliphatic alkyl, aryl, heterocyclic radical, alkoxyl or alkoxyalkyl independently of one another, R
1or R
2can be the same or different, m and n represents 0 or 1 independently of one another.
Above-mentioned aliphatic group is the aliphatic group of straight chain, side chain or ring-type, is preferably enumerated as the aliphatic group of straight chain.Carbon number is generally 1 ~ 36, is preferably 2 ~ 24, more preferably 4 ~ 20, most preferably is 4 ~ 10.As the concrete example of the saturated fat alkyl of straight chain or side chain, methyl can be enumerated, ethyl, propyl group, isopropyl, normal-butyl, isobutyl group, the tert-butyl group, n-pentyl, isopentyl, tertiary pentyl, sec-amyl, n-hexyl, isohesyl, n-heptyl, Zhong Gengji, n-octyl, n-nonyl, Zhong Renji, positive decyl, n-undecane base, dodecyl, n-tridecane base, n-tetradecane base, n-pentadecane base, n-hexadecyl, n-heptadecane base, n-octadecane base, NSC 77136 base, n-eicosane base, docosyl, pentacosane base, positive octacosyl, positive melissyl, 5-(n-pentyl) decyl, heneicosyl, tricosyl, tetracosyl, cerul, heptacosane base, nonacosyl, positive melissyl, spiny dogfish alkyl, dotriacontyl, hexatriacontane base etc.As the concrete example of the representative examples of saturated aliphatic alkyl of ring-type, cyclohexyl, cyclopenta, adamantyl, norborneol alkyl etc. can be enumerated.
As aryl, the aromatic hydrocarbyl etc. of phenyl, xenyl, pyrenyl, xylyl, Mesityl oxide base, cumenyl, benzyl, phenethyl, α-methylbenzyl, trityl, styryl, cinnamoyl, xenyl, 1-naphthyl, 2-naphthyl, anthryl, phenanthryl etc. can be enumerated.Heterocyclic radical is the aromatic heterocycle containing sulphur, oxygen, nitrogen-atoms, is preferably 2-thienyl, thienothiophene base.Aryl or heterocyclic radical can have C
4~ C
10the above-mentioned aliphatic alkyl alternatively base of alkyl etc., when having multiple substituting group, respective substituting group can be identical or different.
As alkoxyl, methoxyl group can be enumerated as, ethyoxyl, positive propoxy, n-butoxy, n-pentyloxy, just own oxygen base, positive heptan oxygen base, n-octyloxy, positive ninth of the ten Heavenly Stems oxygen base, n-decyloxy, n-undecane oxygen base, n-dodecane oxygen base, n-tridecane oxygen base, n-tetradecane oxygen base, n-pentadecane oxygen base, hexadecane oxygen base, n-heptadecane oxygen base, n-octadecane oxygen base, NSC 77136 oxygen base, n-eicosane oxygen base, Heneicosane oxygen base, n-docosane oxygen base, n-tricosane oxygen base, n-tetracosane oxygen base, pentacosane oxygen base, n-hexacosane oxygen base, heptacosane oxygen base, positive octacosane oxygen base, positive nonacosane oxygen base, and positive melissane oxygen base.Preferably be enumerated as methoxyl group, ethyoxyl, positive propoxy, n-butoxy, n-pentyloxy, just own oxygen base, positive heptan oxygen base, n-octyloxy, positive ninth of the ten Heavenly Stems oxygen base, n-decyloxy, n-undecane oxygen base, n-dodecane oxygen base, n-tridecane oxygen base, n-tetradecane oxygen base, n-pentadecane oxygen base, hexadecane oxygen base, n-heptadecane oxygen base, n-octadecane oxygen base, NSC 77136 oxygen base and n-eicosane oxygen base etc. carbon number be the alkoxyl of 1 ~ 20.
As alkoxyalkyl, methoxyl methyl can be enumerated, ethoxymethyl, positive third oxygen methyl, positive fourth oxygen methyl, positive penta oxygen methyl, just own oxygen methyl, positive heptan oxygen methyl, just pungent oxygen methyl, positive ninth of the ten Heavenly Stems oxygen methyl, positive last of the ten Heavenly stems oxygen methyl, n-undecane oxygen methyl, n-dodecane oxygen methyl, n-tridecane oxygen methyl, n-tetradecane oxygen methyl, n-pentadecane oxygen methyl, hexadecane oxygen methyl, n-heptadecane oxygen methyl, n-octadecane oxygen methyl, NSC 77136 oxygen methyl, methoxyethyl, ethoxyethyl, positive third oxygen ethyl, positive fourth oxygen ethyl, positive penta oxygen ethyl, just own oxygen ethyl, positive heptan oxygen ethyl, just pungent oxygen ethyl, positive ninth of the ten Heavenly Stems oxygen ethyl, positive last of the ten Heavenly stems oxygen ethyl, n-undecane oxygen ethyl, n-dodecane oxygen ethyl, n-tridecane oxygen ethyl, n-tetradecane oxygen ethyl, n-pentadecane oxygen ethyl, hexadecane oxygen ethyl, n-heptadecane oxygen ethyl, n-octadecane oxygen ethyl, NSC 77136 oxygen ethyl, methoxycarbonyl propyl, ethoxypropyl, positive third oxygen propyl group, positive fourth oxygen propyl group, positive penta oxygen propyl group, just own oxygen propyl group, positive heptan oxygen propyl group, just pungent oxygen propyl group, positive ninth of the ten Heavenly Stems oxygen propyl group, positive last of the ten Heavenly stems oxygen propyl group, methoxy butyl, ethoxy butyl, positive third oxygen-butyl, positive fourth oxygen-butyl, positive penta oxygen-butyl, just own oxygen-butyl, positive heptan oxygen-butyl, just pungent oxygen-butyl, positive ninth of the ten Heavenly Stems oxygen-butyl, positive last of the ten Heavenly stems oxygen-butyl.Preferably be enumerated as methoxyl methyl, ethoxymethyl, positive third oxygen methyl, positive fourth oxygen methyl, positive penta oxygen methyl, just own oxygen methyl, methoxyethyl, ethoxyethyl, positive third oxygen ethyl, positive fourth oxygen ethyl, positive penta oxygen ethyl, just own oxygen ethyl, methoxycarbonyl propyl, ethoxypropyl, positive third oxygen propyl group, positive fourth oxygen propyl group, positive penta oxygen propyl group, just own oxygen propyl group, methoxy butyl, ethoxy butyl, positive third oxygen-butyl, positive fourth oxygen-butyl, positive penta oxygen-butyl, just own oxygen-butyl, positive heptan oxygen-butyl, just pungent oxygen-butyl, positive ninth of the ten Heavenly Stems oxygen-butyl, positive last of the ten Heavenly stems oxygen-butyl.
X in formula (1)
1and X
2and R
1and R
2preferred compositions be combination between above-mentioned preferred compound separately, the preferred combination be combined as between above-mentioned preferred compound separately.At this moment, m and n represents 0 or 1 independently of one another.
As the representative example of the compound represented by above-mentioned formula (1), following compound (2) ~ compound (7) can be enumerated.The phase transition temperature of described compound is in the scope of 90 DEG C ~ 280 DEG C.
Compound shown in above-mentioned formula (1) can by as JournaloftheAmericanChemicalSociety, No.2007, and 51,15732 and AdvanceMaterial, 2011, the known method recorded in 23.1222 is synthesized.The method of purification of the compound shown in formula (1) is not particularly limited, and can adopt the known methods such as recrystallization, column chromatography and vacuum sublimation purification.And, as required, described Combination of Methods can be used.
Next, the form example based on Fig. 1 carries out following explanation to the manufacture method of organic semiconductor device of the present invention.
In the present invention, make by heat lamination the two kinds of base material laminatings being formed with insulating barrier and electrode on two base materials separately, manufacture organic semiconductor device 0 (see Fig. 1) thus.1st substrate (being called grid substrate 9) stacked grid 2 and insulating barrier 3 on base material 1, another substrate
(being called source and drain substrate 10) be stacked insulating barrier 7 and source electrode 5, drain electrode 6 on base material 8.
(making of grid substrate)
[process of base material 1]
Organic semiconductor device of the present invention is made by the electrode arranging necessity on base material 1 as described above or insulating barrier.For the wetability (stacked easness) improving stacked each layer can carry out clean.Can carry out such as: the acid treatment of hydrochloric acid or sulfuric acid, acetic acid etc.; The alkali treatment of NaOH, potassium hydroxide, calcium hydroxide, ammonia etc.; Ozone treatment; Fluorination treatment; The plasma treatment of oxygen or argon etc.; The formation processing of Langmuir-Blodgett film; The surface treatment etc. of the electric treatment of corona discharge etc. etc.
[formation of grid 2]
The above-mentioned material etc. with conductivity is used to form grid on base material 1.As the method forming electrode, enumerate such as: vacuum vapour deposition, sputtering method, rubbing method, thermal transfer, print process, sol-gal process etc.Preferably carry out patterning when film forming or after film forming as required to form desired shape.Method as patterning can use various method, can enumerate such as: the patterning of photoresist and the combined photoetching process etc. of etching method.In addition, also can utilize the soft lithographies such as print process, micro-contact-printing such as ink jet printing, silk screen printing, hectographic printing, letterpress and by the method for described method multiple combination to carry out patterning.
[formation of insulating barrier 3]
The material etc. with above-mentioned insulating properties is used to form insulating barrier 3 (see Fig. 3) on base material 1 and grid 2.As the formation method of insulating barrier 3, can enumerate such as: the rubbing methods such as spin-coating method, spraying process, dip coating, the tape casting, scraper rubbing method, scraper for coating; The print processes such as silk screen printing, hectographic printing, ink jet printing; The dry method such as vacuum vapour deposition, molecular beam epitaxial growth method, ionization cluster beam method, ion plating method, sputtering method, atmospheric pressure plasma method, CVD; Deng.Insulating barrier 3 can carry out surface treatment.Afterwards by regulating the trap position etc. on the molecularly oriented of interface portion or degree of crystallinity, minimizing base material or insulating barrier that contact with the semiconductor layer of film forming, thinking and can change the characteristics such as carrier mobility.Trap position refers to the functional groups such as the hydroxyl be present on untreated base material, and when there is such functional group, electronics is attracted by this functional group, and result carrier mobility declines.Thus reducing trap position sometimes also can to characteristic improvement such as carrier mobilities effectively.
(making of source-drain electrode substrate)
[process of base material 8]
Identical with aforesaid base material 1, base material 8 is processed.
[formation of insulating barrier 7]
Use the material with described insulating properties, identical with the formation of described insulating barrier 3, base material 8 is formed insulating barrier 7.
[formation of source electrode 5 and drain electrode 6]
Use the above-mentioned material etc. with conductivity on insulating barrier 7, form source electrode 5 and drain electrode 6.Source electrode 5 can be identical with the material of drain electrode 6, also can be different.The method forming electrode is identical with the formation method of grid 2.For reducing the contact resistance of the electrode of source electrode 5 and drain electrode 6, can adulterate molybdenum oxide or metal is carried out to the process of mercaptan etc.These thin layers can be laminated in source electrode 5 by the method identical with the material with conductivity and/or drain 6 top or bottom.
[arrangement of semiconductor layer]
Next, organic semiconducting materials 11 is configured on the source-drain electrode substrate made as stated above.Organic semiconducting materials 11 used in the present invention, except can directly configure except the material of solid, molten condition, also can configure organic semiconducting materials with coating/printing process; Be configured by the requirement of the solution-treated of ink jet printing method, silk screen print method, flexographic printing process, micro-contact-printing etc. etc. being configured at the method in the place of needs, this can improve the utilization ratio of organic semiconducting materials, therefore preferably.Below, the allocation method of semiconductor layer is described in detail.
First, when directly configuring the material of solid or molten condition, the organic semiconducting materials of the pressed powder of bulk or attritive powder directly can be configured or intersperses among required position, or be heated to the organic semiconducting materials of phase transition temperature by the various method coating such as stamp or distribution.Organic semiconducting materials 11 can be got in simple terms for bar-shaped, coat desired position with molten condition former state.
Next, the method by solution process configuration organic semiconducting materials 11 is described.So-called solution process refers to, in advance the semi-conducting material such as compound etc. shown in formula of the present invention (1) with solvent soluble is dissolved in organic solvent, the solution of the organic semiconducting materials that coating/drying obtains thus semi-conducting material is configured at the method at desired position.The environmental modulation when manufacture method of coating and coating and printing process are without the need to manufacturing device is vacuum or the condition of high temperature, and can manufacture large-area organic semiconductor device with low cost, therefore industrially favourable.In addition, when using solution process in the present invention, can be random from the stage crystal orientation of solution crystallization, also can only evaporate the organic solvent be contained in solution.Therefore, without the need to carrying out the process of the reorientation regulating crystal orientation by long heat treatment or carried out crystal by reprocessing.
Organic semiconducting materials 11 can be configured on raceway groove, also can be configured near outside raceway groove.Forming semiconductor layer when making crystal grow in a certain direction, being preferably configured near outside raceway groove by lamination methods, usual preferred disposition is in the scope of below the 5mm of either party of source electrode or drain electrode.In this case, do not limit and be configured near which electrode.Furthermore, when configuring in the mode that orientation is consistent with the carriage direction of film, the direction of growth of crystal and the migratory direction of charge carrier consistent with the direct of travel of lamination and the carriage direction of film, therefore more preferably (see Fig. 2).
[formation of semiconductor layer and making of organic semiconductor device]
The source-drain electrode substrate 10 of laminating machine to grid substrate 9 and configuration organic semiconducting materials is used to carry out heat lamination, make organic semiconducting materials along namely identical with the carriage direction of the film direction crystal growth of the direct of travel of lamination thus, form the raceway groove comprising organic film, simultaneously by 2 kinds of base material crimping, thus make organic semiconductor device.Use the condition identical with the formation method of aforesaid organic film in heat lamination, manufacture organic semiconductor device of the present invention.
The operating characteristic of general organic semiconductor device by the static capacity of the carrier mobility of semiconductor layer, conductivity, insulating barrier, element form decisions such as (the Distance geometry width between source drain, the thickness etc. of insulating barrier), but in order to obtain the high carrier mobility of semiconductor layer, organic semiconducting materials needs to keep orientation in certain direction.The formation method of organic film of the present invention can promote along the direct of travel of described lamination and the constant crystal growth of the carriage direction of film when lamination 2 kinds of base materials; By using described method, the non-damageable organic semiconductor device lightweight while that there is high carrier mobility, flexibility is excellent can be manufactured.In addition, the sandwich of the symmetry centered by semiconductor layer is formed by using identical material in the material of 2 kinds of base materials and the material of 2 kinds of insulating barriers, thus be not vulnerable to, because using different materials or material and the impact of distortion produced etc., high flexing resistance can be obtained.And the manufacture method of organic semiconductor device of the present invention, can manufacture in the mode of roller to roller, compared with vacuum evaporation process in the past or other coating print method, production capacity is high, and cost is very low, can be applicable to the manufacture of the organic semiconductor device of large area display purposes.
Organic semiconductor device of the present invention can be used as the switch element etc. of the active matrix of display.As display, enumerate such as: liquid crystal display, polymer dispersion type liquid crystal display device, electrophoretype display, EL display, electrochromism escope, particle rotation escope etc.In addition, also digital element or the analog elements such as memory circuit element, signal drive circuit element, signal processing circuit element can be used as.By combining described element, IC-card or IC tag can be made.And organic semiconductor device of the present invention can make its characteristic change by outside stimuluss such as chemical substances, therefore can also expect to use as FET transducer.
Embodiment
Below, enumerate embodiment and illustrate in greater detail the present invention, but the present invention does not limit by these examples.In embodiment, except as otherwise noted, part represents mass parts, and % represents quality %.
Embodiment 1
It is on the polyimide film of 12 μm that the solid (fusing point: 127 DEG C) of compound (2) is configured at thickness, covers a polyimide film on the membrane more afterwards.Clamp described substrate with the mode corrosion resistant plate applying uniform pressure, use the laminating machine (FUJIPLA LamipackerMeister6LPD3226) of band hot-rolling, roll temperature is 150 DEG C, and roll-in is 5.9N/cm
2, with the speed lamination two substrates of 0.4m/ minute, thus obtain the organic film that compound (2) makes.
Embodiment 2
When carrying out polarized light microscope observing to the organic film obtained in embodiment 1, demonstrate single die region and extend along the direction identical with the carriage direction of film as shown in Fig. 4 (a), the direction of growth of crystal grain is controlled.These typical crystallite dimensions are 200 μm ~ 300 μm, confirm as very large grain growth.And also do not cause large defect (gap) to film after confirming the roller of contact 150 DEG C, define uniform film.
Embodiment 3
Except the roll temperature of laminating machine is changed to 160 DEG C, sweep speed changes to outside 1.5m/ minute, identical with embodiment 1, and lamination 2 polyimide films, obtain the organic film of inclusion compound (2).
Embodiment 4
Identical with embodiment 2, when the organic film obtained embodiment 1 carries out polarized light microscope observing, confirm the carriage direction crystal growth along the film as shown in Fig. 4 (b).In the device that the present embodiment uses, the upper limit of roll temperature is 160 DEG C, and maximum sweep rate is 1.5m/ minute, but by suitably regulating temperature, obtains the result that anticipation can realize crystal growth more at a high speed.
Comparative example 1
Remove the temperature of below the fusing point temperature of the roller of laminating machine being changed to compound (2), namely 120 DEG C, sweep speed changes to outside 0.4m/ minute, identical with embodiment 1, lamination 2 polyimide films, confirm the state of compound (2), be the state of thick film after lamination, the crystal growth along film carriage direction can not be confirmed.
Embodiment 5
Polyimide film is formed the parylene film of 900nm, makes at an upper portion thereof and define gold electrode to grow the source electrode of 20 μm and the source-drain electrode substrate of drain electrode as raceway groove.On the other hand, polyimide film forms gold electrode using as grid, make the grid substrate of the parylene film defining 900nm at an upper portion thereof.
The solid (fusing point: 127 DEG C) of the position (see Fig. 2) configuration compound (2) of 3mm is being about from the source electrode on source-drain electrode substrate or drain electrode distance lamination pusher side, with embodiment 1 the same terms laminated two substrates, between source-drain electrode, form the organic film be made up of compound (2), make OTFT.
Embodiment 6
To the characteristic of semiconductor of the OTFT of the organic semiconductor device obtained in embodiment 5, measure in the following manner.KEITHLEY2635ASYSTEMSourceMeter is used to measure applied voltage and the grid current of grid, KEITHLEY6430SUBFEMTOAMPREMOTESourceMeter is used to measure applied voltage and the drain current of source drain, make drain voltage be-50V, the mobility that grid voltage Vg calculates under the condition of 20V ~-50V change is 0.15cm
2/ Vs, threshold voltage is-5V.
Embodiment 7
Remove the SAM film modified phenyl-pentafluoride thiophenol and make in the source-drain electrode of embodiment 5, and formed outside implanted layer, identical with embodiment 5, make OTFT.
Embodiment 8
The OTFT that obtains in embodiment 7 uses the device identical with embodiment 6, drain voltage change be-10V, grid voltage Vg be changed to 5V ~-10V condition under measure.The mobility calculated is 0.33cm
2/ Vs, can confirm there is high mobility in low-voltage state, the effect of SAM film is still stablized after laminating.
Embodiment 9
V-type modulus method tool is as shown in Figure 5 used to measure the flexing resistance of the OTFT obtained in embodiment 5.The ditch of acute angle arranges the OTFT that embodiment 1 obtains, passage is given as security and posts the metal bar with radius of curvature (1mm), press-bending OTFT.As shown in Figure 6, gate electrode side is started to bend (state of 2 in Fig. 6) to periphery, afterwards a series of mensuration is carried out in source-drain electrode side direction periphery press-bending (state of 4 in Fig. 6), measure the transistor characteristic (that is, the numbering shown in Fig. 6 and the numbering shown in Fig. 7 are corresponding respectively) in each state.As shown in Figure 7, in all bending states, the transmission characteristic of transistor does not change, and represents to have high bending resistance.
Result according to each embodiment, use the organic film of lamination methods of the present invention, confirm along the direction crystal growth identical with transporting film direction, high characteristic of semiconductor is not only showed according to the flexible organic semiconductor device that described method is made, after the bend test of radius of curvature 1mm, transmission characteristic does not change, and shows excellent flexing resistance.In addition, confirm as need not to carry out when making semiconductor layer vacuum vapour deposition or in order to crystal growth numerous and diverse, accurate control and limit the manufacture method that can form the high productive capacity of organic semiconductor thin-film of crystal growth direction between raceway groove.
Reference numeral
0 organic semiconductor device
1 base material
2 grids
3 insulating barriers
4 semiconductor layers
5 source electrodes
6 drain electrodes
7 insulating barriers
8 base materials
9 grid substrate
10 source-drain electrode substrates
11 organic semiconducting materials
Claims (11)
1. the formation method of an organic film, it for forming the method for the organic film of organic semiconducting materials between two resin base materials, wherein, described method comprises by using lamination methods to suppress the resin base material and another resin base material that are configured with described organic semiconducting materials and fitted.
2. the formation method of organic film as claimed in claim 1, wherein, when described heat lamination, is set as the temperature of more than the liquid crystal transition temperature of described organic semiconducting materials, glass transition temperature or fusing point by hot-rolling portion.
3. the formation method of organic film as claimed in claim 1, wherein, when described heat lamination, hot-rolling portion is set as the temperature of more than the liquid crystal transition temperature of described organic semiconducting materials, glass transition temperature or fusing point, after making this organic semiconducting materials phase transformation, crystal is grown to the direct of travel of lamination.
4. a manufacture method, it at least comprising grid, insulating barrier, source electrode, draining and comprising the manufacture method of flexible organic semiconductor device of organic semiconductor layer of organic semiconducting materials of more than a kind between two resin base materials (i) and (ii), wherein, described manufacture method comprises: by using lamination methods suppress this resin base material (i) and another this resin base material (ii) of being configured with this organic semiconducting materials and fitted, form the organic semiconductor layer that crystal grows to certain orientation thus.
5. manufacture method as claimed in claim 4, wherein, described resin base material (i) comprises described grid, the described insulating barrier that formed in the mode covering this grid and the described organic semiconducting materials be configured on this insulating barrier; Described resin base material (ii) comprises described insulating barrier and the described source electrode that is formed on this insulating barrier and described drain electrode; By using lamination methods suppress this resin base material (i) and this resin base material (ii) and fitted, form organic semiconductor layer thus.
6. manufacture method as claimed in claim 4, wherein, described organic semiconducting materials is configured on described insulating barrier with solid or molten condition.
7. the manufacture method of organic semiconductor device as claimed in claim 4, wherein, described organic semiconducting materials is coated with by the solution process containing organic semiconducting materials, drying and being configured on described insulating barrier.
8. manufacture method as claimed in claim 4, wherein, when described heat lamination, is set as the temperature of more than the liquid crystal transition temperature of organic semiconducting materials, glass transition temperature or fusing point by the temperature in hot-rolling portion.
9. manufacture method as claimed in claim 4, wherein, the liquid crystal transition temperature of described organic semiconducting materials, glass transition temperature or fusing point are lower than the glass transition temperature of resin base material (i) and (ii).
10. the manufacture method according to any one of claim 4 to 9, wherein, described organic semiconducting materials is the compound represented by following formula (1).
In formula (1), X
1and X
2represent sulphur atom or selenium atom independently of one another, R
1and R
2represent hydrogen atom, aliphatic alkyl, aryl, heterocyclic radical, alkoxyl or alkoxyalkyl independently of one another, R
1and R
2can be mutually identical or different, n and m represents 0 or 1 independently of one another.
11. 1 kinds of flexible organic semiconductor devices, it is obtained by the manufacture method according to any one of claim 4 to 10.
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| JP2013-045255 | 2013-03-07 | ||
| JP2013045255 | 2013-03-07 | ||
| PCT/JP2014/055993 WO2014136942A1 (en) | 2013-03-07 | 2014-03-07 | Method for forming organic thin film |
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| CN105103324A true CN105103324A (en) | 2015-11-25 |
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| JP (1) | JPWO2014136942A1 (en) |
| KR (1) | KR20150130363A (en) |
| CN (1) | CN105103324A (en) |
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| CN113981541A (en) * | 2021-12-27 | 2022-01-28 | 天津大学 | Method and device for growing organic semiconductor single crystal |
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| CN106796987B (en) * | 2014-07-17 | 2019-03-01 | 日本化药株式会社 | The forming method of organic semiconductor thin-film and the organic semiconductor device and its manufacturing method for using this method |
| TWI703746B (en) * | 2015-08-28 | 2020-09-01 | 國立大學法人千葉大學 | Method for producing organic semiconductor device and powder |
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| US20040201064A1 (en) * | 2001-09-05 | 2004-10-14 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
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| JP2008066439A (en) * | 2006-09-06 | 2008-03-21 | Konica Minolta Holdings Inc | Method of manufacturing organic thin film transistor |
| JP2010040768A (en) * | 2008-08-05 | 2010-02-18 | Dainippon Printing Co Ltd | Method of manufacturing organic semiconductor element, and the organic semiconductor element |
| JP5093049B2 (en) * | 2008-10-27 | 2012-12-05 | コニカミノルタホールディングス株式会社 | ORGANIC ELECTRONIC ELECTRONIC DEVICE, METHOD FOR MANUFACTURING THE SAME |
| JP5708980B2 (en) * | 2009-08-24 | 2015-04-30 | 株式会社リコー | Organic electronic device manufacturing method and organic electronic device |
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2014
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- 2014-03-07 CN CN201480020235.5A patent/CN105103324A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040201064A1 (en) * | 2001-09-05 | 2004-10-14 | Konica Corporation | Organic thin-film semiconductor element and manufacturing method for the same |
| JP2006270094A (en) * | 2005-03-24 | 2006-10-05 | Samsung Sdi Co Ltd | Method for patterning organic thin film, organic thin-film transistor using it and its manufacturing method, flat panel display provided with organic thin-film transistor |
| CN101635333A (en) * | 2008-07-24 | 2010-01-27 | 索尼株式会社 | Semiconductor composite film, method for forming semiconductor composite film, thin film transistor, method for manufacturing thin film transistor, and electronic apparatus |
| JP2010040678A (en) * | 2008-08-01 | 2010-02-18 | Panasonic Corp | Semiconductor manufacturing equipment and production process of semiconductor device |
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| CN113981541A (en) * | 2021-12-27 | 2022-01-28 | 天津大学 | Method and device for growing organic semiconductor single crystal |
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| WO2014136942A1 (en) | 2014-09-12 |
| TW201448305A (en) | 2014-12-16 |
| KR20150130363A (en) | 2015-11-23 |
| JPWO2014136942A1 (en) | 2017-02-16 |
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