CN105097893A - III-nitride substrate and preparation process - Google Patents
III-nitride substrate and preparation process Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000000227 grinding Methods 0.000 claims description 37
- 239000002245 particle Substances 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 19
- 229910003460 diamond Inorganic materials 0.000 claims description 17
- 239000010432 diamond Substances 0.000 claims description 17
- 235000012149 noodles Nutrition 0.000 claims description 15
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- 238000001312 dry etching Methods 0.000 claims description 12
- 238000001039 wet etching Methods 0.000 claims description 12
- 239000003082 abrasive agent Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000006061 abrasive grain Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 abstract description 25
- 238000012360 testing method Methods 0.000 abstract description 16
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 41
- 229910002601 GaN Inorganic materials 0.000 description 30
- 238000005516 engineering process Methods 0.000 description 28
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- 239000013078 crystal Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
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- 229910002704 AlGaN Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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Abstract
The invention provides an III-nitride substrate and a preparation method. At least one groove exists on an III-element surface of the provided substrate and has V-shaped cross section, the depth range of the groove is from 0.3 nanometer to 50 nanometers, and the width range is from 10 nanometers to 500 nanometers. The III-nitride substrate has the advantages that lattice damage is only removed without particularly caring whether a scratch is removed or not, and test result shows that the quality of the obtained epitaxial layers is the same compared with a scratch-free substrate adopted in the prior art. Therefore, the technical prejudice that no scratch must be adopted to the epitaxial layer is abandoned, the substrate with the scratch is provided for epitaxial growing, and the process cost brought by chemical mechanical polishing is saved.
Description
Technical field
The present invention relates to field of semiconductor materials, particularly relate to group III-nitride substrate and preparation technology.
Background technology
Gallium nitride (GaN) is broad stopband direct gap semiconductor material, has excellent electrical and optical properties, has a wide range of applications in fields such as the bluish-green opto-electronic device to ultraviolet band and high-power pulsed ion beams.Can be used for the backing material of epitaxial growth GaN related device has a variety of, comprises self-supporting (free-standing) GaN substrate, sapphire, carborundum etc.Wherein there is not lattice mismatch and thermal mismatching between Free-standing GaN substrate and extension GaN material, be called as homoepitaxy technology.There is larger lattice mismatch in epitaxial growth GaN material on other substrates and heat be excuse me, but I must be leaving now, and is called as heterogeneous epitaxial technology.In homoepitaxy technology, the defect concentration in GaN material and device can be reduced to 10
6cm
-2below, effectively can promote the performance index of GaN related device, be following important developing direction.
But compared to heterogeneous epitaxial technology, the development of homoepitaxy technology still faces a series of challenge.Surface topography and the evenness of such as initial GaN substrate have very important impact to subsequent epitaxial GaN material and device, are one of key challenge of facing of homoepitaxy technology.
In heterogeneous epitaxial technology, be used at present epitaxial growth GaN device the foreign substrate such as sapphire, carborundum processing generally adopt rough lapping, smooth grinding and chemico-mechanical polishing (CMP) three steps to carry out.Wherein, the respective advantages of chemical polishing and mechanical polishing is got up by CMP technology, hundreds of the nanometer even damage layer of several microns that mechanical lapping is introduced can be removed fast, thus obtaining the substrate surface of not damaged layer, atomically flating, its surface roughness (Ra) is usually at below 0.2nm.
In homoepitaxy technology, the processing technology routine of the substrate such as sapphire, carborundum is generally also followed in the surface treatment for GaN self-supported substrate, utilizes rough lapping, smooth grinding and chemico-mechanical polishing three steps to carry out surface treatment.But different from sapphire, the Ga surface chemistry stable in properties of Free-standing GaN substrate, in chemical mechanical polish process process, its chemical polishing efficiency is very low.The CMP speed having bibliographical information Free-standing GaN substrate Ga face is 17nm/h, needs CMP to process 150h and could remove the damage that mechanical lapping brings.See H.Aida, H.Takeda, K.Koyama, H.Katakura, K.Sunakawa, T.Doi, Chemicalmechanicalpolishingofgalliumnitridewithcolloidal silica, J.Electrochem.Soc.158 (2011) H1206 – H1212, and H.Aida, H.Takeda, S-W.Kim, N.Aota, K.Koyama, T.Yamazaki, T.Doi, EvaluationofsubsurfacedamadgeinGaNsubstrateinducedbymech anicalpolishingwithdiamondabrasives, Appl.Surf.Sci.292 (2014) 531-536.Therefore, compared to the Typical abrasive polishing time 2 to 4 hours of Sapphire Substrate, more than 30 times are improve to the Ga mirror polish time of GaN, significantly adds the processing cost of Free-standing GaN substrate.Therefore, surface atom level is smooth, the Free-standing GaN substrate of not damaged layer will face huge cost challenges to adopt the method for the CPM similar with sapphire to obtain, and is unfavorable for production-scale amplification.Therefore, the treatment process technology on the GaN self-supported substrate surface of Development of Novel is badly in need of.
Summary of the invention
Technical problem to be solved by this invention is, provides group III-nitride substrate and the preparation technology of low cost.
In order to solve the problem, the invention provides a kind of group III-nitride substrate, for epitaxial growth, it is the groove of V-type that the III unit vegetarian noodles of described substrate at least exists a cross section, the depth bounds of described groove is 0.3nm-50nm, and width range is 10nm-500nm.
Optionally, the depth bounds of described groove is 0.1nm ~ 8.0nm, and width range is 10nm ~ 344nm.
Optionally, the depth bounds of described groove is 0.1nm ~ 16.3nm, and width range is 10nm ~ 166nm.
Invention further provides a kind of group III-nitride substrate, comprise support substrates and epitaxial loayer, described support substrates and epitaxial loayer are III-nitride material, and the surface that described support substrates and epitaxial loayer are fitted is its group III-nitride face, it is the groove of V-type that the III unit vegetarian noodles of described support substrates at least exists a cross section, the depth bounds of described groove is 0.3nm-50nm, and width range is 10nm-500nm.
Optionally, described epitaxial loayer is filled in described groove.
Invention further provides a kind of preparation technology for epitaxially grown group III-nitride substrate, comprise the steps: to provide a group III-nitride substrate; Implement to grind to the III unit vegetarian noodles of described group III-nitride substrate, the lattice of this grinding technics meeting effects on surface forms damage, and is the groove of V-type at its surface multiple cross section of formation; III unit vegetarian noodles after process grinding makes it meet epitaxially grown requirement; It is characterized in that, the step of the III unit vegetarian noodles after process grinding adopts the method for dry method or wet etching to remove the lattice be damaged.
Optionally, described grinding technics adopts diamond particles as abrasive material, and in abrasive material, the particle size range of abrasive grains is 1 micron to 6 microns.
Optionally, the lattice in 500nm ~ 3000nm degree of depth below described grinding steps effects on surface forms damage.
Optionally, adopt the method for dry etching to remove the lattice be damaged, after enforcement, surface at least exists a cross section is the groove of V-type, and the depth bounds of described groove is 0.1nm ~ 8.0nm, and width range is 10nm ~ 344nm.
Optionally, adopt the method for wet etching to remove the lattice be damaged, after enforcement, surface at least exists a cross section is the groove of V-type, and described depth bounds is 0.1nm ~ 16.3nm, and width range is 10nm ~ 166nm.
The invention has the advantages that, adopt etching process more fast to instead of chemico-mechanical polishing, only remove lattice damage and do not take notice of whether remove cut especially.In fact, because the removal speed of the effects on surface of etching process is substantially identical, therefore cut is retained.But test result shows, and adopt compared with no marking substrate in prior art, the epitaxial layer quality obtained is identical.Therefore, the present invention has abandoned epitaxial substrate must the technology prejudice of no marking, and the substrate providing cut, for epitaxial growth, saves the process costs that chemico-mechanical polishing brings.
Accompanying drawing explanation
It is a kind of pattern schematic diagram with the substrate surface of cut that of the present invention embodiment provides shown in accompanying drawing 1.
It is the implementation step schematic diagram of the specific embodiment of the present invention shown in accompanying drawing 2.
It is the test result of grinding rear surface damage situations in the specific embodiment of the present invention shown in accompanying drawing 3, wherein picture (a) is SEM photo, represent scuffing situation, picture (b) is cathode-luminescence (CL) spectrum, expression be lattice damage.
Shown in accompanying drawing 4 be adopt in the specific embodiment of the present invention particle diameter 1 micron diamond particles grind after section CL compose.
Grind in the specific embodiment of the present invention and the test result of dry etching rear surface damage situations shown in accompanying drawing 5, wherein picture (a) is SEM photo, represent cut situation, picture (b) is cathode-luminescence (CL) spectrum, what represent is the stain (not luminous) that only there is end of dislocation, the damage layer that no marking is corresponding, illustrates that damage layer is removed completely.
Grind in the specific embodiment of the present invention and the test result of wet etching rear surface damage situations shown in accompanying drawing 6, wherein picture (a) is SEM photo, represent cut situation, picture (b) is cathode-luminescence (CL) spectrum, what represent is the stain (not luminous) that only there is end of dislocation, the damage layer that no marking is corresponding, illustrates that damage layer is removed completely.
Shown in accompanying drawing 7 be adopt in the no marking substrate of prior art and the specific embodiment of the present invention have cut substrate to adopt HVPE technique to carry out epitaxial growth after epi-layer surface AFM photo comparison, wherein (a) adopts the no marking substrate after chemico-mechanical polishing, and (b) adopts employing particle diameter 1 micron diamond particles described in this embodiment to grind, and the substrate after adopting dry etching to remove lattice damage layer.
Shown in accompanying drawing 8 be the specific embodiment of the present invention used employing particle diameter 1 micron diamond particles grinding, and after adopting the substrate after dry etching removal lattice damage layer to do epitaxial growth, the optical microscope photograph on surface and the contrast schematic diagram of AFM photo, wherein (a) is optical microscope photograph, and (b) is AFM photo.
It is the test result of the XRD of substrate made by the specific embodiment of the present invention shown in accompanying drawing 9, wherein (a), (b) are the employing particle diameter 1 micron diamond particles grindings used of this embodiment, and the substrate after adopting dry etching to remove lattice damage layer does the swing curve of the X-ray diffraction after epitaxial growth, wherein (a) figure is the swing curve in (0006) face, and (b) figure is the swing curve in (10-12) face; C (), (d) are the swing curves of the X-ray diffraction after the further epitaxial growth of normal buff sample, wherein (c) figure is the swing curve in (0006) face, and (d) figure is the swing curve in (10-12) face.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to group III-nitride substrate provided by the invention and preparation technology.
For simplicity, following embodiment describe in for GaN.And the III element surface of the III-nitride material of AlN, InN, AlGaN and other binary, ternary so that quaternary all presents identical character, therefore all protection scope of the present invention should be considered as.
First the embodiment for epitaxially grown group III-nitride substrate of the present invention is provided by reference to the accompanying drawings.
Find after deliberation, utilize rough lapping, the Ga face of smooth grinding technology to GaN self-supported substrate process, or only adopt rough lapping technology to process GaN self-supported substrate, after above-mentioned processing, the Ga face of GaN self-supported substrate forms primarily of interlaced cut.Be the pattern schematic diagram of the substrate surface with this cut shown in accompanying drawing 1, comprise multiple cuts 11 on substrate 10 and surface, and the cross-sectional morphology figure of the cut provided with the form of partial enlargement.The characteristic feature of these cuts is: these cuts form crisscross lines on surface, Ga face, between each bar cut with random distribution and on the interlaced surface being presented on Ga face.On the cross section perpendicular to cut lines, cut is V-shaped.In order to show the feature of cut 11, the size of Fig. 1 to cut 11 of this embodiment has been done and has been amplified process, is not considered as beasurement base.Dimension scale between actual substrate 10 and cut 11 can be very little, and the size of substrate 10 is about 5cm, and the width range of cut 11 can not be greater than 1 micron usually.
No marking is to one of basic demand of epitaxial substrate in prior art, therefore the Normal practice of this area be need further by chemico-mechanical polishing, above-mentioned cut is eliminated.But for III metal surface, the difficulty of polishing is very large, needs within up to a hundred hours, just cut can be eliminated completely, to meet the needs of subsequently epitaxial growing.If without polishing, the defect concentration of the epitaxial loayer of subsequent growth is high.
But find through further experiment, what in fact affect epitaxial layer quality is not only cut, is also the damage of mechanical lapping effects on surface lattice, this damage is deep to the surperficial region of several microns once usually.And chemico-mechanical polishing in fact not only serves the effect of removing cut, also serve the effect of removing damage layer.And the laterally overgrown ability of the III-nitride material such as GaN is stronger, by initial stage GaN nucleating growth, follow-up GaN laterally overgrown, can realize smooth GaN epitaxy Material growth, such as graphical sapphire substrate (PSS) technology etc. on the surface with certain figure.Therefore, in fact chemico-mechanical polishing is mainly reflected in the contribution that raising subsequent epitaxial layer quality is done and removes impaired lattice.Based on this discovery, this embodiment provides a kind of substrate 10 retaining the scuffing that grinding brings, at least there is the groove 11 that a cross section is V-type in III unit vegetarian noodles, the depth bounds of described groove 11 is 0.3nm-50nm, and width range is 10nm-500nm.Wherein the degree of depth of 0.3nm and the width of 10nm are the requirements to substrate surface cut in prior art, according to the general cognition of this area to extension substrate quality, if substrate surface has the cut exceeding this size, be can not be used for epitaxially grown.And the degree of depth of 50nm and the height of 500nm continue to do in epitaxially grown processing step side direction to cover and grow smooth full-size again.
Although the surface due to substrate 10 does not need to remove cut, but still need to remove impaired lattice, therefore also need to adopt the method for dry method or wet etching to do corrosion treatment.Substrate 10 after dry etching process, the exemplary depth scope of described groove 11 is 0.1nm ~ 8.0nm, and width range is 10nm ~ 344nm.And the substrate 10 after wet etching process, the exemplary depth scope of described groove 11 is 0.1nm ~ 16.3nm, and width range is 10nm ~ 166nm.
This substrate 10 can be used as the support substrates of subsequently epitaxial growing, and on its III unit vegetarian noodles continued growth epitaxial loayer, can be homoepitaxy or heteroepitaxy.Epitaxial lateral overgrowth effect in epitaxial growth can be smooth by scratch removal.Making devices structure in epitaxial loayer can be continued after surfacing, include but not limited to for making light emitting diode construction and laser structure etc.This substrate also can continue on for epitaxial growth.And due to epitaxial loayer be continued growth at substrate surface, therefore the material of described epitaxial loayer can be filled in described groove further.
Next the embodiment of the preparation method of group III-nitride substrate of the present invention is provided by reference to the accompanying drawings.
Be the implementation step schematic diagram of this embodiment shown in accompanying drawing 2, comprise: step S20, a group III-nitride substrate is provided; Step S21, implement to grind to the III unit vegetarian noodles of described group III-nitride substrate, the lattice of this grinding technics meeting effects on surface forms damage, and is the groove of V-type at its surface multiple cross section of formation; Step S22, adopts the method for dry method or wet etching to remove the lattice be damaged, makes it meet epitaxially grown requirement.
Refer step S20, provides a group III-nitride substrate.This embodiment describe in for GaN.And the III element surface of the III-nitride material of AlN, InN, AlGaN and other binary, ternary so that quaternary all presents identical character, therefore all protection scope of the present invention should be considered as.
Step S21, implement to grind to the III unit vegetarian noodles of described group III-nitride substrate, the lattice of this grinding technics meeting effects on surface forms damage, and is the groove of V-type at its surface multiple cross section of formation.Substrate after the enforcement of this step please refer to shown in accompanying drawing 1.Described grinding steps comprises the rough lapping and smooth grinding implemented successively.Cut and impaired lattice is there is through the surface, Ga face of the GaN self-supported substrate of grinding technics.If substrate after grinding directly carries out follow-up GaN epitaxy growth, the crystal mass of GaN epitaxy material will be caused to worsen.
It is the test result of grinding rear surface damage situations shown in accompanying drawing 3, wherein picture (a) is SEM photo, represent scuffing situation, picture (b) is cathode-luminescence (CL) spectrum, each cut region all presents darkened features (namely luminous intensity is weak), represents that this region exists lattice damage.Due to the deviation of tester, the position of two test selections is also not quite identical.The general principle of CL spectrum is as follows: crystalline material can be luminous by electron-beam excitation, and there is the place of a large amount of defect, luminous intensity is more weak; In the place that defect concentration is low, luminous intensity is stronger.There is a large amount of damage layer around owing to scratching, under CL measures, present darker color, present obvious contrast with the luminescence in the following not damaged GaN layer of surface.
This embodiment adopts diamond particles as abrasive material, and in abrasive material, the particle size range of abrasive grains is 1 micron to 6 microns.For GaN substrate, find the grinding by particle diameter 6 micron diamond particles, the damage layer thickness that cut is corresponding is about 2000-3000nm, by the grinding of particle diameter 3 micron diamond particles, the damage layer thickness that cut is corresponding is about 1000-2000nm, by the grinding of particle diameter 1 micron diamond particles, the damage layer thickness that cut is corresponding is about 500-1000nm.Adopt section CL spectrum can record the depth profile of this damage layer.That section CL after adopting the grinding of particle diameter 1 micron diamond particles composes shown in accompanying drawing 4.This lesion depths is used for the removal amount determining to adopt dry method or wet etching in next step.For other materials or other abrasive material, lesion depths can be determined by the section CL spectrum of accompanying drawing 4.
Refer step S22, adopts the method for dry method or wet etching to remove the lattice be damaged, makes it meet epitaxially grown requirement.The object of this step is that the III unit vegetarian noodles after processing grinding makes it meet epitaxially grown requirement.Prior art adopts the method for chemico-mechanical polishing, but for III metal surface, the difficulty of polishing is very large, needs within up to a hundred hours, just cut can be eliminated completely, to meet the needs of subsequently epitaxial growing.If without polishing, the defect concentration of the epitaxial loayer of subsequent growth is high.
But find through further experiment, what in fact affect epitaxial layer quality is not only cut, is also foregoing mechanical damage.And chemico-mechanical polishing in fact not only serves the effect of removing cut, also serve the effect of removing damage layer.And the laterally overgrown ability of the III-nitride material such as GaN is stronger, by initial stage GaN nucleating growth, follow-up GaN laterally overgrown, can realize smooth GaN epitaxy Material growth, such as graphical sapphire substrate (PSS) technology etc. on the surface with certain figure.Therefore, in fact chemico-mechanical polishing is mainly reflected in the contribution that raising subsequent epitaxial layer quality is done and removes impaired lattice.
Based on above-mentioned research, this embodiment proposes to replace chemico-mechanical polishing to do surface treatment with dry method or wet etching, such as inductively coupled plasma etching (ICP) technology, ion beam etching (IBE) technology or chemistry (acid or alkali) corrosion technology.This technique is more quick, at most only needs can complete for several minutes.
For ICP technology or IBE technology, surface, Free-standing GaN substrate Ga face is etched, for the surface, Ga face of the GaN self-supported substrate of the grinding through 6 micron diamond particles, its etching depth is generally 4000nm, for the surface, Ga face of the GaN self-supported substrate of the grinding through 3 micron diamond particles, its etching depth is generally 3000nm, and for the surface, Ga face of the GaN self-supported substrate of the grinding through 1 micron diamond particles, its etching depth is generally 2000nm.The object of etching is to remove impaired lattice.In above-mentioned etching process, the surface in Ga face is almost identical with the etching speed of cut inside, and significant change does not occur the surface topography after etching, still remains the groove that crisscross cross section is V-type.It is 0.1nm-8.0nm that cut AFM after having etched scans the exemplary depth scope obtained, and width range is 10-344nm.
For acid, aqueous slkali or the caustic solution such as surface electrochemistry, Optical Electro-Chemistry, corrode surface, Free-standing GaN substrate Ga face, object is to remove impaired lattice.After above-mentioned corrosion, because chemical corrosion exists certain anisotropic, compare to dry etching, cut pattern slightly changes.Scanning through AFM the exemplary depth scope obtained is 0.1nm-16.3nmnm, and width range is 10nm-166nm.
It is the test result of grinding dry etching rear surface damage situations shown in accompanying drawing 5, wherein picture (a) is SEM photo, represent cut situation, picture (b) is cathode-luminescence (CL) spectrum, what represent is the stain (not luminous) that only there is end of dislocation, the damage layer that no marking is corresponding, illustrates that damage layer is removed completely.It is the test result of grinding wet etching rear surface damage situations shown in accompanying drawing 6, wherein picture (a) is SEM photo, represent scuffing situation, picture (b) is cathode-luminescence (CL) spectrum, what represent is the stain (not luminous) that only there is end of dislocation, the damage layer that no marking is corresponding, illustrates that damage layer is removed completely.Due to the deviation of tester, the position of two test selections is also not quite identical.As can be seen from the figure, the black lines without any cut wire of CL spectrum, illustrates and is removed by major part by grinding the lattice damage caused.And SEM photo still can find out not removed cut.
If according to general understanding of the prior art, the substrate with cut be can not be used for epitaxially grown.And above-mentioned substrate is used for epitaxial growth and the substrate of no marking carries out epitaxial growth after polishing, the epitaxial layer quality obtained is almost identical.That no marking substrate adopts HVPE technique to carry out the epi-layer surface AFM photo comparison after epitaxial growth with the cut substrate that has described in this embodiment shown in accompanying drawing 7, wherein (a) adopts the no marking substrate after chemico-mechanical polishing, surface atom step width is 330nn-2380nm, and (b) adopts employing particle diameter 1 micron diamond particles described in this embodiment to grind, and the substrate after adopting dry etching to remove lattice damage layer, surface atom step width is 230nm-1880nm, there is no significant difference each other.
Can also find out further by the contrast photo of light microscope and AFM for there being the surface topography of cut substrate.Shown in Fig. 8 be this embodiment used employing particle diameter 1 micron diamond particles grinding, and after adopting the substrate after dry etching removal lattice damage layer to do epitaxial growth, the optical microscope photograph on surface and the contrast schematic diagram of AFM photo, wherein (a) is optical microscope photograph, and (b) is AFM photo.Because epitaxial loayer is thinner, therefore light microscope can photograph the step of substrate surface through epitaxial loayer, and what AFM photo showed is then surface smoothness.Be not difficult to find out from contrast, the cut of substrate is repaired completely.
Further represent that the test result of crystal mass can be found out by the measurement of XRD.It is the test result of XRD shown in accompanying drawing 9, wherein (a), (b) are the employing particle diameter 1 micron diamond particles grindings used of this embodiment, and the substrate after adopting dry etching to remove lattice damage layer does the swing curve of the X-ray diffraction after epitaxial growth, wherein (a) figure is the swing curve in (0006) face, b () figure is the swing curve in (10-12) face, its halfwidth is respectively 43 second of arcs and 40 second of arcs; C (), (d) are the swing curves of the X-ray diffraction after the further epitaxial growth of normal buff sample, wherein (c) figure is the swing curve in (0006) face, d () figure is the swing curve in (10-12) face, its halfwidth is respectively 40 second of arcs and 43 second of arcs.Halfwidth due to swing curve reflects the size of defect concentration in material, and from test result, both crystal mass are without significant difference.
Be not difficult to find out by above-mentioned test result, the substrate that the specific embodiment of the present invention obtains adopts etching process more fast to instead of chemico-mechanical polishing, only removes lattice damage and does not take notice of whether remove cut especially.In fact, because the removal speed of the effects on surface of etching process is substantially identical, therefore cut is retained.But test result shows, and adopt compared with no marking substrate in prior art, the epitaxial layer quality obtained is identical.Therefore, the present invention has abandoned epitaxial substrate must the technology prejudice of no marking, and the substrate providing cut, for epitaxial growth, saves the process costs that chemico-mechanical polishing brings.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (10)
1. a group III-nitride substrate, for epitaxial growth, is characterized in that, it is the groove of V-type that the III unit vegetarian noodles of described substrate at least exists a cross section, and the depth bounds of described groove is 0.3nm-50nm, and width range is 10nm-500nm.
2. group III-nitride substrate according to claim 1, is characterized in that, the depth bounds of described groove is 0.1nm ~ 8.0nm, and width range is 10nm ~ 344nm.
3. group III-nitride substrate according to claim 1, is characterized in that, the depth bounds of described groove is 0.1nm ~ 16.3nm, and width range is 10nm ~ 166nm.
4. a group III-nitride substrate, comprise support substrates and epitaxial loayer, described support substrates and epitaxial loayer are III-nitride material, and the surface that described support substrates and epitaxial loayer are fitted is its group III-nitride face, it is characterized in that, it is the groove of V-type that the III unit vegetarian noodles of described support substrates at least exists a cross section, and the depth bounds of described groove is 0.3nm-50nm, and width range is 10nm-500nm.
5. group III-nitride substrate according to claim 4, is characterized in that, described epitaxial loayer is filled in described groove.
6. a preparation method for group III-nitride substrate, comprises the steps:
One group III-nitride substrate is provided;
Implement to grind to the III unit vegetarian noodles of described group III-nitride substrate, the lattice of this grinding technics meeting effects on surface forms damage, and is the groove of V-type at its surface multiple cross section of formation;
III unit vegetarian noodles after process grinding makes it meet epitaxially grown requirement;
It is characterized in that, the step of the III unit vegetarian noodles after process grinding adopts the method for dry method or wet etching to remove the lattice be damaged.
7. the preparation method of group III-nitride substrate according to claim 6, is characterized in that, described grinding technics adopts diamond particles as abrasive material, and in abrasive material, the particle size range of abrasive grains is 1 micron to 6 microns.
8. the preparation method of group III-nitride substrate according to claim 7, is characterized in that, the lattice below described grinding steps effects on surface in 500nm ~ 3000nm degree of depth forms damage.
9. the preparation method of group III-nitride substrate according to claim 6, it is characterized in that, the method of dry etching is adopted to remove the lattice be damaged, after enforcement, surface at least exists a cross section is the groove of V-type, the depth bounds of described groove is 0.1nm ~ 8.0nm, and width range is 10nm ~ 344nm.
10. the preparation method of group III-nitride substrate according to claim 6, it is characterized in that, the method of wet etching is adopted to remove the lattice be damaged, after enforcement, surface at least exists a cross section is the groove of V-type, described depth bounds is 0.1nm ~ 16.3nm, and width range is 10nm ~ 166nm.
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| JP2001322899A (en) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | Gallium nitride-based compound semiconductor substrate and method of producing the same |
| CN101378002A (en) * | 2008-09-12 | 2009-03-04 | 山东大学 | Method for processing GaN epitaxial substrate |
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| JP2001322899A (en) * | 2000-05-11 | 2001-11-20 | Matsushita Electric Ind Co Ltd | Gallium nitride-based compound semiconductor substrate and method of producing the same |
| CN101378002A (en) * | 2008-09-12 | 2009-03-04 | 山东大学 | Method for processing GaN epitaxial substrate |
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