CN105097849A - Double-photoelectric detector-based photoelectric detection circuit - Google Patents
Double-photoelectric detector-based photoelectric detection circuit Download PDFInfo
- Publication number
- CN105097849A CN105097849A CN201510519585.2A CN201510519585A CN105097849A CN 105097849 A CN105097849 A CN 105097849A CN 201510519585 A CN201510519585 A CN 201510519585A CN 105097849 A CN105097849 A CN 105097849A
- Authority
- CN
- China
- Prior art keywords
- photodetector
- device region
- circuit
- photoelectric
- photoelectric detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 title abstract description 10
- 238000012545 processing Methods 0.000 claims abstract description 36
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 58
- 230000008569 process Effects 0.000 claims description 34
- 239000004411 aluminium Substances 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 16
- 229910052710 silicon Inorganic materials 0.000 abstract description 16
- 239000010703 silicon Substances 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000013461 design Methods 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000009286 beneficial effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 230000004043 responsiveness Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000005513 bias potential Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 208000032170 Congenital Abnormalities Diseases 0.000 description 1
- 206010010356 Congenital anomaly Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000007698 birth defect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
The invention discloses a double-photoelectric detector-based photoelectric detection circuit. The double-photoelectric detector-based photoelectric detection circuit includes a first photoelectric detector, a second photoelectric detector and a signal processing circuit; the input stage circuit of the signal processing circuit is a differential input circuit; the first photoelectric detector comprises a first device region; the first device region of the first photoelectric detector is formed by the collector region of an NPN transistor; M second device regions of the first photoelectric detector are produced in the first device region of the first photoelectric detector, wherein M is a natural number smaller than 10; the second device regions of the first photoelectric detector are formed by the base region of the NPN transistor; the structure of the second photoelectric detector is identical to the structure of the first photoelectric detector; and the surface of the second photoelectric detector is coated with an aluminum film. According to the photoelectric detection circuit of the invention, the photoelectric detection sensors can be compatible with a silicon bipolar integrated circuit technology; and the signal processing circuit can inhibit external electromagnetic interference. The double-photoelectric detector-based photoelectric detection circuit has the advantages of high quantum efficiency and low dark current.
Description
Technical field
The present invention relates to a kind of photoelectric detective circuit, particularly based on the photoelectric detective circuit of double-photoelectric detector.
Background technology
Monolithic optical detection circuit forms primarily of photodetector transducer and crystal amplifier, and the faint optical signal that light path transmits by it converts the signal of telecommunication to through detector and exports after amplifier amplification, process.
Usual monolithic optical detection circuit has the following advantages: the impact that can reduce distributed constant, improves the performance of device; Save the interconnection bonding between photoelectric device, reduce the volume of device, improve the reliability of device.Owing to having These characteristics, advantage and application prospect widely, make it a kind of important development trend becoming Light Coupled Device output.
And the design key of monolithic optical detection circuit is the large technical problem of solution two: the design of (1) high performance photoelectric acquisition sensor; (2) matched design between the signal processing circuit that realizes of photoelectric acquisition sensor and crystal amplifier, and process compatible.
(1) state of the art of photoelectric acquisition sensor design is first introduced:
The basic function of photoelectric acquisition sensor is that the luminous power incided on detector is converted to corresponding photoelectric current.The quality of its performance is directly connected to the precision of receiving processing circuit.Therefore, only have the photodetector that Choice and design is suitable, just can not weaken the performance of receiving processing circuit.
During design, main it is considered that the noise of photodetector, quantum efficiency, responsiveness etc. several technical indicator.In a lot of application, such as optical coupler output, often need photodetector and signal transacting to be integrated on same single-chip, that is to say the process compatible realizing photodetector and signal processing circuit, and this is one, and technology is very complicated, difficulty is quite large.
Concrete, silicon materials itself are not but be well suited for for making photoelectric device: first silicon is not a kind of direct band gap material, thus can not make the luminescent device such as efficient laser, LED (light-emitting diode), this is determined by the crystal structure of itself; Silicon does not possess the characteristics such as linear electro-optic effect in addition, can not change the refractive index of material by the mode of extra electric field, is therefore also not suitable for for making the signal processor such as optical switch, optical modulator.Just because of these birth defects of silicon materials, people, when making integrated optoelectronic device, have invested more sight the material that the photoelectric properties such as III-V, lithium niobate and organic polymer are more superior.Silicon makes material as integrated optoelectronic device, although there are some inadequate natural endowments, if to require depending on specific performance in the design and in conjunction with actual process condition reasonable selection material, technique the structure designing high performance-price ratio just can meet different application demand.
Such as at optical coupler design field, often need silicon photodetector and signal processing circuit to carry out compatibility, and realize at present silicon photo-detector both at home and abroad and with the compatible technological means generally adopted of signal processing circuit be: (1) is by silicon photo-detector and MOS process compatible.In CMOS technology, producing pin-PD simultaneously, substantially do not change standard CMOS process, is the most simple effective method of development high-speed light receiver.(2) SOIMOS technique.Manufacture cmos circuit with SOI material substitution Si body material, its advantage mainly contains: reduce device isolation region area; Reduce processing step; Suppress substrate current; Avoid latch-up; There is low parasitic capacitance, thus can power consumption be reduced, realize circuit more at a high speed.(3) SiGe/SiHBT technique.SiGe technology while the speed of Si base device is brought up to new height, due to it and Si process compatible, and maintain that price is low, good reliability and be easy to the advantages such as multifunctional unit; And compare with CMOS technology, it has lower noise and better power efficiency.
The prior art more than enumerated is all that silicon photo-detector and MOS integrated circuit technology are carried out compatibility, but also lacking silicon photo-detector and another kind of integrated circuit technology in prior art, is also that the silicon bipolar circuit technique that technique is the most ripe carries out compatible technical scheme.And at optical coupler design field, the signal processing circuit of a large amount of maturation is all formed by Si bipolar process manufacture, therefore we need, in conjunction with actual process condition reasonable selection material, technique design the structure of high performance-price ratio, to realize the compatibility of silicon photodetector and silicon bipolar integrated circuit technique.In a word in this special application, prior art or a blank.
(2) matched design between the signal processing circuit realized about photoelectric acquisition sensor and crystal amplifier, and the state of the art of process compatible:
Comprise MESFET, PHEMT, COMS and HBT etc. from technique signal processing circuit major technique several, because cmos device has easy of integration, low-power consumption, the preamplifier of CMOS technology becomes the main flow of design.
From circuit structure, the input stage of signal processing circuit is generally the one-input terminal signal amplification circuit adopting directly feedback, and this single ended input is connected with photoelectric acquisition sensor.
Summary of the invention
For prior art above shortcomings, the object of this invention is to provide a kind of photoelectric detective circuit, its photoelectric acquisition sensor can with silicon bipolar integrated circuit process compatible, and it is high to have quantum efficiency, the little feature of dark current; And its signal processing circuit is differential input, and has with double-photoelectric detector matched design and can suppress external electromagnetic interference feature.
For achieving the above object, the present invention adopts following technological means:
Based on a photoelectric detective circuit for double-photoelectric detector, it is characterized in that, comprise the first photodetector, the second photodetector and signal processing circuit;
Described signal processing circuit input stage circuit is differential input circuit, and signal processing circuit input stage circuit has two inputs: first input end INA and the second input INB;
Described first photodetector comprises the first device region, and the first device region of described first photodetector is formed by the collector region of NPN transistor, and the horizontal direction cross section of the first device region of the first photodetector is square;
Second device region of M the first photodetector is produced in the first device region of the first photodetector, M be less than 10 natural number, second device region of described first photodetector is formed by the base of NPN transistor, and described NPN transistor is made by Si bipolar process;
First device region of described first photodetector is provided with electrode hole, and the second device region of the first photodetector is provided with electrode hole;
All electrode holes be arranged on the first photodetector second device region are interconnected by aluminium film connecting line, connect the second terminal that electrical nodes is designated as the first photodetector;
The electrode hole be arranged on the first device region of the first photodetector is drawn by aluminium film connecting line, is designated as the first terminal of the first photodetector;
Described second photodetector comprises the first device region, and the first device region of described second photodetector is formed by the collector region of NPN transistor, and the horizontal direction cross section of the first device region of the second photodetector is square;
Second device region of M the second photodetector is produced in the first device region of the second photodetector, M be less than 10 natural number, second device region of described second photodetector is formed by the base of NPN transistor, and described NPN transistor is made by Si bipolar process;
First device region of described second photodetector is provided with electrode hole, and the second device region of the second photodetector is provided with electrode hole;
All electrode holes be arranged on the second photodetector second device region are interconnected by aluminium film connecting line, connect the second terminal that electrical nodes is designated as the second photodetector;
The electrode hole be arranged on the first device region of the second photodetector is drawn by aluminium film connecting line, is designated as the first terminal of the second photodetector;
Described second photodetector surfaces is coated with aluminium film;
Described first photodetector and the second photodetector are symmetricly set in single-chip;
The first terminal of described first photodetector is electrically connected with the first terminal of the second photodetector;
The first input end INA of signal processing circuit input stage circuit is connected with the second terminal of the first photodetector; Second input INB of signal processing circuit input stage circuit is connected with the second terminal of the second photodetector.
Further, the second horizontal direction cross section, device region of described first photodetector is circular; Second horizontal direction cross section, device region of described second photodetector is circular.
Compared to existing technology, the present invention has following beneficial effect:
(1) because the present invention adopts the PN junction of bipolar process as the foundation structure realizing photodetection, make the PN junction area of the photodetector designed comparatively large (junction area of the collector junction area relative MOS technique formation PN junction of bipolar NPN transistor wants large), PN junction depth large (relative to MOS technique), depletion region is thicker, is conducive to improving quantum efficiency.This foundation structure makes the present invention obtain the beneficial effect in more high-quantum efficiency with clear superiority.
Further, the present invention selects bipolar process realizing circuit will be more suitable for the integrated of power-type optical coupler photodetector and signal processing circuit, power-type optical coupler output often needs larger driving force, and therefore signal processing circuit is compared and selected MOS technique to have the beneficial effect that can realize larger driving force.
(2) the present invention reduces the technological means that detector PN junction diode depletion region capacitance adopts is M the second device region is produced on (two photodetectors all adopt this structure) in the first device region of the first photodetector, therefore detector area obtains reduction, that is to say in an acquisition sensor and in fact comprise the less detector of multiple area, detector area reduces, but can not PN junction depth be reduced again, thus do not affect quantum efficiency, therefore there is the beneficial effect of fast response time.
(3) signal processing circuit of the present invention is differential input, and have with double-photoelectric detector (comprising the first photodetector and the second photodetector) matched design and can suppress external electromagnetic interference beneficial effect, and make due to employing bipolar process and the compatibility that matches with photodetector, therefore also there is the fast response time of bipolar process circuit own, feature that driving force is strong, therefore can meet the demand of power driving circuit.And the compatibility between this transducer of the present invention and signal processing circuit improves the production efficiency of photoelectric device, is more suitable for volume production.
Accompanying drawing explanation
Fig. 1 is the planar structure schematic diagram of the first photodetector and the second photodetector in the present invention;
Fig. 2 is the vertical structure schematic diagram of the first photodetector in the present invention.
Fig. 3 is electrical block diagram of the present invention
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further details.
As shown in Figure 3, monolithic optical detection circuit forms primarily of photodetector transducer and crystal amplifier.First photodetector design is set forth:
During photodetector design, main it is considered that its noise, quantum efficiency, responsiveness etc. several technical indicator.
In order to specific design of the present invention is described in detail.First overall structure of the present invention is done an elaboration by us, and some concrete structures of transducer of the present invention are explained in the performance parameter design then in conjunction with photoelectric acquisition sensor.
One, overall structure.
As shown in Figure 1, a kind of photoelectric detective circuit based on double-photoelectric detector, comprises the first photodetector 1 and the second photodetector 2; First photodetector 1 is identical with the structure of the second photodetector 2, and all adopts silicon bipolar integrated circuit technique to be made; First photodetector 1 and the second photodetector 2 all have two signal terminals.
Second photodetector 2 surface coverage has aluminium film;
Described first photodetector 1 and the second photodetector 2 are symmetricly set in single-chip, certainly this is by being plotted in symmetric position by two photodetectors during IC Layout, in follow-up ic manufacturing process, two photodetectors nature to be integrated on same circuit of single-chip integrated on tube core by symmetry.
Two, the performance parameter design of photoelectric acquisition sensor.
In order to set forth clear by the design of performance parameter, first we introduce the operation principle of common photoelectric testing sensor, and this is also basic functional principle of the present invention and the course of work.
The key property parameter of photodetector comprises:
1) quantum efficiency and responsiveness
Quantum efficiency is defined as the electron-hole pair number that absorption incident photon can produce, and is the most important index of semiconductor photodetector, can be expressed as:
Wherein a (λ) is the absorption coefficient of corresponding wavelength λ, and W is depletion layer thickness.Visible, the absorption coefficient along with material increases or depletion layer thickens, and the quantum efficiency of detector is higher.
In the present invention, the first device region of photodetector is formed by the collector region of NPN transistor, and the second device region of photodetector is formed by the base of NPN transistor, and NPN transistor is made by Si bipolar process; In other words the PN junction of photodetector is formed by the bipolar NPN transistor technological process making Simulation scale-up treatment circuit, and the two is compatible.And general bipolar process NPN pipe basic structure size is; Minimum feature size is 6 μm, epitaxy layer thickness 12 μm, and resistivity is about 2.5Q.cm, base junction depth 2.2.-2.6 μm, and the PN junction depth for photodetector of in other words bipolar process manufacture is 2.2.-2.6 μm.
The PN junction depth for photodetector that common MOS technique is formed is 0.3 μm, and this is determined by the feature of MOS technique own certainly, is comparatively applicable to fiber optic communication field with the photodetector that MOS process signal treatment circuit is integrated.
Therefore, because the present invention adopts the PN junction of bipolar process as the foundation structure realizing photodetection, make the PN junction area of the photodetector designed comparatively large (junction area of the collector junction area relative MOS technique formation PN junction of bipolar NPN transistor wants large), PN junction depth large (relative to MOS technique), depletion region is thicker, is conducive to improving quantum efficiency.This foundation structure makes the present invention more have clear superiority in high-quantum efficiency obtaining.
Further, the present invention selects bipolar process realizing circuit will be more suitable for the integrated of power-type optical coupler photodetector and signal processing circuit, power-type optical coupler output often needs larger driving force, and therefore signal processing circuit is compared and selected MOS technique to have the beneficial effect that can realize larger driving force.
In a word, need (simultaneously integrated electro probe unit and signal transacting driver element) for power-type optical coupler output circuit integration, utilize the feature of bipolar process own, the present invention has selected collector electrode that junction depth is larger as photodetector basic structure in conjunction with actual process situation, and this is conducive to the quantum efficiency improving detector.When prior art generally uses MOS technique to realize photo-detector, the above selection that the present invention makes is first innovative point of the present invention, is also the starting point of whole creative work.This final structure for detector proposes extremely important, because above selection had both made power-type optical coupler output circuit integration need (simultaneously integrated electro probe unit and signal transacting driver element) to become possibility, the raising of quantum efficiency is made again to have advantage in foundation structure, will, due to the defect of technology controlling and process in manufacture process, make quantum efficiency too low.
The basic structure in other words adopting bipolar NPN transistor technological process to form photodetector of the present invention has innate advantage in raising quantum efficiency.
And in the detector of reality, light directly can not reach uptake zone by material surface, but through the middle doping contact zone of certain thickness, to can cause a part of photonic losses in this region, also can make portion of incident light reflection loss in the reflex of detector surface simultaneously.Based on these factors, (1) formula can be rewritten as:
Wherein d is front end contact layer thickness, and Rf is the reflectivity of detector surface, and the photo-generated carrier that the photon inciding uptake zone produces, under the effect of depletion region internal electric field, to the two poles of the earth drift motion of detector, and forms photoelectric current at output.
Analyze based on this, the present invention is at the second device region 12 surface deposition anti-reflection film of the first photodetector; (anti-reflection film is made up of silicon dioxide and silicon nitride); Or the mode of the SIO2 layer and passivation layer eroding device surface can be taked to reduce the loss of light emitted energy, and these are all the further Optimized Measures improving quantum efficiency.
In addition, the second device region 12 of the first photodetector of the present invention and the second device region 22 of the second photodetector all can adopt circular configuration, and this is conducive to improving photechic effect, and this is also conducive to the raising of quantum efficiency and responsiveness.But circular configuration is large due to area, and device surface leakage current also can be caused to increase.
2) response speed
The response speed of photodetector is weighed by the rise time of detectable signal or fall time, usually gets larger value between the two.Usually require that photodetector can respond fast to high-speed optical pulse signal, thus improve signal to noise ratio, improve the overall performance of system.In semiconductor photo detector, the factor affecting response speed mainly contains 3 points:
A. the transit time of depletion region carriers.B. the carrier diffusion time outside depletion region.C. detector PN junction diode depletion region capacitance.The electric capacity of depletion layer is the principal element affecting speed, and this just means that large-area detector can not be used for the higher light signal of look-in frequency.The area reducing detector can effectively reduce junction capacitance and dark current.
Concrete technological means of the present invention is M the second device region is produced on (two photodetectors all adopt this structure) in the first device region of the first photodetector, therefore detector area obtains reduction, that is to say in an acquisition sensor and in fact comprise the less detector of multiple area, detector area reduces, but can not PN junction depth be reduced again, thus not affect quantum efficiency.The reduction of detector device area simultaneously also can reduce the device surface leakage current increase defect owing to adopting circular configuration to cause to improve photechic effect.
3) leakage current and noise
To desirable photodetector, should photoelectric current be there is no when unglazed photograph, but in fact still have less electric current.It is mainly by the generation-recombination current of charge carrier in depletion layer and the few sub-dissufion current of depletion layer boundaries, and tracking current is formed.Because the energy gap of silicon is comparatively large, as long as avoid producing lattice defect in the course of processing as far as possible, ensure the high-purity of silicon, the leakage current caused by charge carrier generation-compound is very little (<2 × 10-11A/mm2).Produce possibility except the aforesaid reduction device area table by device structure design reduces leakage current, face leakage current can be reduced by passivated surface, can be reduced under 2 × 10-11A/mm2.That is to say and can set about improving SNR from semiconductor technology aspect.
Additionally use in the present invention and increase the process means such as epitaxy layer thickness and resistivity raising responsiveness.
Three, the concrete structure of photoelectric acquisition sensor of the present invention designs and using method.
As shown in Figure 2, first photodetector 1 comprises the first device region 11, first device region 11 of the first photodetector is formed by the collector region of NPN transistor, the horizontal direction cross section of the first device region 11 of the first photodetector is for square is (in order to improve photechic effect, also circle can be selected, but simultaneously because circular area is larger, also bring the risk that device surface leakage current increases, when concrete enforcement, select the horizontal direction cross sectional shape of the first device region 11 according to the maturity of technique own and technique controlling difficulty;
Second device region 12 of M the first photodetector is produced on the first device region 11 of the first photodetector, M be less than 10 natural number, second device region 12 of the first photodetector is formed by the base of NPN transistor, and NPN transistor is made by Si bipolar process;
First device region 11 of the first photodetector is provided with multiple electrode hole, and each second device region 12 of the first photodetector is provided with electrode hole;
The electrode hole be arranged on the first device region 11 of the first photodetector is drawn by aluminium film connecting line, is designated as the first terminal 13 of the first photodetector;
All electrode holes be arranged on the first photodetector second device region are interconnected (not shown in this aluminium film connecting line Fig. 2) by aluminium film connecting line, connect the second terminal that electrical nodes is designated as the first photodetector;
The first terminal 13 of the first photodetector is electrically connected with the first terminal 23 of the second photodetector;
Second photodetector 2 adopts the structure identical with the first photodetector 1, and the surface coverage of the second photodetector 2 has aluminium film, certainly, uses silicon dioxide material layer to keep apart between the aluminium film for connecting electrode hole and the aluminium film for covering device surface;
First photodetector 1 and the second photodetector 2 are symmetricly set in single-chip.
Below set forth signal processing circuit design: as shown in Figure 3, wherein Q1, Q2, R3, R4 form differential input level to signal processing circuit, and Q3, Q4, Q5, Q6 form buffer stage.
Photoelectric acquisition sensor of the present invention and signal processing circuit are integrated, the second terminal of the first photodetector 1, the second terminal of the second photodetector 2 is electrically connected with two inputs of signal processing circuit differential input level circuit respectively.
First photodetector 1, second photodetector 2 is identical two photodetectors (the first photodetector 1 receiving optical signals, second photodetector 2 due to device surface cover aluminium film therefore aiming screen cover), input biasing circuit is for they provide stable common reference voltage, every one end having influence on differential wave of the almost identical degree of same like this interference source, the same interference appearing at differential both sides just can be left in the basket and serve the effect of suppression external electromagnetic interference.In addition differential wave has nothing to do with the exact value of bias potential to a great extent, even if bias potential has minor variations also can not have influence on the numerical value of measuring-signal.
In addition, in order to obtain larger input dynamic range, exist in prior art and adopt automatic growth control (AGC) unit, by detecting the amplitude of output signal, open the Article 2 feedback path be made up of AGC when large-signal inputs and then adjust across resistance, this mode makes to depend critically upon technique across resistance, but also TIA may be made unstable.A kind of trans-impedance amplifier based on logarithmic amplification is also there is in prior art, overcome the low reliability adopting conventional AGC circuits, but this element circuit structure is too complicated, the present invention then adopts the Schottky diode SD1 in bipolar process, SD2 Lai Clamp-on position output voltage achieves larger photoelectric current input dynamic range (0.1uA-1mA) equally, enormously simplify circuit structure simultaneously.
What finally illustrate is, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted, although with reference to preferred embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, can modify to technical scheme of the present invention or equivalent replacement, and not departing from aim and the scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (2)
1. based on a photoelectric detective circuit for double-photoelectric detector, it is characterized in that, comprise the first photodetector (1), the second photodetector (2) and signal processing circuit (3);
Described signal processing circuit (3) input stage circuit is differential input circuit, and signal processing circuit (3) input stage circuit has two inputs: first input end INA and the second input INB;
Described first photodetector (1) comprises the first device region (11), first device region (11) of described first photodetector is formed by the collector region of NPN transistor, and the horizontal direction cross section of first device region (11) of the first photodetector is square;
Second device region (12) of M the first photodetector is produced in first device region (11) of the first photodetector, M be less than 10 natural number, second device region (12) of described first photodetector is formed by the base of NPN transistor, and described NPN transistor is made by Si bipolar process;
First device region (11) of described first photodetector is provided with electrode hole, and second device region (12) of the first photodetector is provided with electrode hole;
All electrode holes be arranged on the first photodetector second device region are interconnected by aluminium film connecting line, connect the second terminal that electrical nodes is designated as the first photodetector;
The electrode hole be arranged on the first device region of the first photodetector is drawn by aluminium film connecting line, is designated as the first terminal (13) of the first photodetector;
Described second photodetector (2) comprises the first device region (21), first device region (21) of described second photodetector is formed by the collector region of NPN transistor, and the horizontal direction cross section of first device region (21) of the second photodetector is square;
Second device region (22) of M the second photodetector is produced in first device region (21) of the second photodetector, M be less than 10 natural number, second device region (22) of described second photodetector is formed by the base of NPN transistor, and described NPN transistor is made by Si bipolar process;
First device region (21) of described second photodetector is provided with electrode hole, and second device region (22) of the second photodetector is provided with electrode hole;
All electrode holes be arranged on the second photodetector second device region are interconnected by aluminium film connecting line, connect the second terminal that electrical nodes is designated as the second photodetector;
The electrode hole be arranged on the first device region of the second photodetector is drawn by aluminium film connecting line, is designated as the first terminal (23) of the second photodetector;
Described second photodetector (2) surface coverage has aluminium film;
Described first photodetector (1) and the second photodetector (2) are symmetricly set in single-chip;
The first terminal (13) of described first photodetector is electrically connected with the first terminal (23) of the second photodetector;
The first input end INA of signal processing circuit (3) input stage circuit is connected with the second terminal of the first photodetector; Second input INB of signal processing circuit (3) input stage circuit is connected with the second terminal of the second photodetector.
2. a kind of photoelectric detective circuit based on double-photoelectric detector according to claim 1, is characterized in that, the second device region (12) the horizontal direction cross section of described first photodetector is circular; Second device region (22) the horizontal direction cross section of described second photodetector is circular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510519585.2A CN105097849B (en) | 2015-08-16 | 2015-08-16 | A kind of photoelectric detective circuit based on double-photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510519585.2A CN105097849B (en) | 2015-08-16 | 2015-08-16 | A kind of photoelectric detective circuit based on double-photoelectric detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105097849A true CN105097849A (en) | 2015-11-25 |
| CN105097849B CN105097849B (en) | 2017-09-05 |
Family
ID=54577914
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510519585.2A Active CN105097849B (en) | 2015-08-16 | 2015-08-16 | A kind of photoelectric detective circuit based on double-photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105097849B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670946A (en) * | 2005-02-16 | 2005-09-21 | 中国电子科技集团公司第二十四研究所 | Method for making high-voltage high-power low differential pressure linear integrated regulated power supply circuit |
| US20130234277A1 (en) * | 2012-03-12 | 2013-09-12 | Ricoh Company, Ltd. | Semiconductor device and imaging apparatus |
| CN203690302U (en) * | 2014-01-23 | 2014-07-02 | 天津大学 | Photoelectric detector with spatial modulation structure |
| CN204946900U (en) * | 2015-08-16 | 2016-01-06 | 重庆电子工程职业学院 | A kind of photoelectric detective circuit based on double-photoelectric detector |
-
2015
- 2015-08-16 CN CN201510519585.2A patent/CN105097849B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1670946A (en) * | 2005-02-16 | 2005-09-21 | 中国电子科技集团公司第二十四研究所 | Method for making high-voltage high-power low differential pressure linear integrated regulated power supply circuit |
| US20130234277A1 (en) * | 2012-03-12 | 2013-09-12 | Ricoh Company, Ltd. | Semiconductor device and imaging apparatus |
| CN203690302U (en) * | 2014-01-23 | 2014-07-02 | 天津大学 | Photoelectric detector with spatial modulation structure |
| CN204946900U (en) * | 2015-08-16 | 2016-01-06 | 重庆电子工程职业学院 | A kind of photoelectric detective circuit based on double-photoelectric detector |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105097849B (en) | 2017-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106531822B (en) | A kind of photodetector | |
| CN105679875B (en) | A kind of integrated silicon substrate single-photon detector of waveguide | |
| CN105789366B (en) | A kind of silicon substrate hybrid integrated avalanche photodetector | |
| CN105742397B (en) | A kind of broadband photodiode of visible ray to infrared light detecting | |
| CN103872168B (en) | For the photodetector in silicon based opto-electronics integrated circuit (IC) chip and preparation method | |
| CN101197623B (en) | Difference light receiver and method for simultaneously multiplying sensibility and band width | |
| CN106356419A (en) | Photoelectric detector containing buried oxide layer structure | |
| CN105185845A (en) | Si-PIN photodetector introducing micro-structure silicon in P layer and N layer and preparation method thereof | |
| CN101719504B (en) | Silicon-based photoelectric detector for photoelectric monolithic integration and preparation method thereof | |
| CN103779361B (en) | Photodetector of spatial modulation structure and preparation method thereof | |
| CN204946900U (en) | A kind of photoelectric detective circuit based on double-photoelectric detector | |
| CN102856324A (en) | Silicon-based uniwafer photoelectricity integrated receiving chip for plastic optical fiber communication | |
| CN202750095U (en) | Optical receiver | |
| CN204946901U (en) | A kind of photoelectric acquisition sensor with Si bipolar process compatibility | |
| CN102833006A (en) | Optical receiver | |
| CN103972247B (en) | For the integrated receiving chip of silicon-based monolithic photoelectricity of automatic electric power kilowatt meter reading-out system | |
| CN105097849B (en) | A kind of photoelectric detective circuit based on double-photoelectric detector | |
| CN114038923B (en) | Heterogeneous integrated structure of thin film lithium niobate optical waveguide and InP-based photoelectric detector | |
| CN115224138B (en) | Horizontal pull-through germanium-silicon avalanche photodetector | |
| CN105097848B (en) | A kind of photoelectric acquisition sensor compatible with Si bipolar process | |
| US10854769B2 (en) | Active photonic device having a darlington configuration with feedback | |
| CN111413757B (en) | Columnar lens, columnar beam splitting lens, optical detector and optical detector array | |
| CN112635453A (en) | Photoelectric detector structure | |
| CN100517736C (en) | Method for eliminating photoelectric crosstalk for guadrantal photoelectric detector | |
| CN105004419A (en) | Photoelectric sensing integrated chip applied to smart home |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20200902 Address after: Room 503, No.14, 24th lane, Dalang langhuan Road, Baiyun Street, Baiyun District, Guangzhou City, Guangdong Province Patentee after: Guangzhou enlightenment Intellectual Property Operation Co.,Ltd. Address before: 401331, No. 76, East Road, University Town, Shapingba District, Chongqing Patentee before: CHONGQING College OF ELECTRONIC ENGINEERING |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201230 Address after: 233000 Anhui Bengbu Wuhe County Economic Development Zone Industrial Acceleration Center 3, 4 level Patentee after: WUHE ZHIKAI ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. Address before: Room 503, No.14, Lane 24, Dalang Ring Road, Baiyun Lake Street, Baiyun District, Guangzhou, Guangdong 510000 Patentee before: Guangzhou enlightenment Intellectual Property Operation Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210120 Address after: 343000 No.78, shangtulong, guobu village, Baijia Town, Wan'an County, Ji'an City, Jiangxi Province Patentee after: Yan Xiaohu Address before: 233000 Anhui Bengbu Wuhe County Economic Development Zone Industrial Acceleration Center 3, 4 level Patentee before: WUHE ZHIKAI ENVIRONMENTAL PROTECTION TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211216 Address after: 110000 3-11-2, No. 16-1, nanbadong Road, Tiexi District, Shenyang City, Liaoning Province Patentee after: Yan Hong Address before: 343000 No.78, shangtulong, guobu village, Baijia Town, Wan'an County, Ji'an City, Jiangxi Province Patentee before: Yan Xiaohu |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220110 Address after: 110000 No. 1, Daxi Road, Shenhe District, Shenyang City, Liaoning Province Patentee after: Shenyang Tianhao power installation engineering Co.,Ltd. Address before: 110000 3-11-2, No. 16-1, nanbadong Road, Tiexi District, Shenyang City, Liaoning Province Patentee before: Yan Hong |
|
| TR01 | Transfer of patent right |