CN105097848B - A kind of photoelectric acquisition sensor compatible with Si bipolar process - Google Patents
A kind of photoelectric acquisition sensor compatible with Si bipolar process Download PDFInfo
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Abstract
The invention discloses a kind of photoelectric acquisition sensor compatible with Si bipolar process, including the first photodetector and the second photodetector；First photodetector includes the first device region, first device region of the first photodetector is formed by the collecting zone of NPN transistor, second device region of M the first photodetectors is produced in the first device region of the first photodetector, M is the natural number less than 10, second device region of first photodetector is formed by the base of NPN transistor, and the second photodetector structure is identical with the first photodetector structure；Second photodetector surfaces are covered with aluminium film.The present invention has the beneficial effect being had a clear superiority in terms of the sub- efficiency of higher amount is obtained, and the beneficial effect with fast response time.
Description
Technical field
The present invention relates to a kind of photoelectric acquisition sensor, photodetection that particularly can be compatible with Si bipolar process is sensed
Device.
Background technology
The basic function of photoelectric acquisition sensor is that the luminous power incided on detector is converted to corresponding photoelectric current.
The quality of its performance is directly connected to the precision of receiving processing circuit.Therefore, suitable photodetector is only selected and designs,
The performance of receiving processing circuit will not just be weakened.
During design, primary concern is that the noise of photodetector, quantum efficiency, several technical indicators such as responsiveness.
In many application fields, such as photo-coupler output par, c is generally required photodetector and signal transacting collection
Into on same single-chip, the process compatible for realizing photodetector and signal processing circuit is that is to say, and this is one
Technology is sufficiently complex, difficulty is quite big.
Specifically, silicon materials are but not well suited for for making photoelectric device in itself：Silicon is not a kind of direct band gap first
Material, thus the luminescent devices such as efficient laser, LED (light emitting diode) can not possibly be made, this is the crystal by itself
Structures shape；Other silicon does not possess the characteristics such as linear electro-optic effect, it is impossible to change the refraction of material with the mode of extra electric field
Rate, therefore be also not suitable for for making the signal processors such as photoswitch, optical modulator.Just because of silicon materials these are congenital
More sight have been invested III-V, lithium niobate and organic by defect, people when making integrated optoelectronic device
The photoelectric properties such as polymer more superior material.For silicon is as integrated optoelectronic device making material, although have some congenital
Deficiency, if but can be required in the design depending on specific performance and combine actual process condition reasonable selection material, technique and set
Counting out the structure of high performance-price ratio just can meet different application demand.
For example in photo-coupler design field, generally require silicon photodetector is compatible with signal processing circuit progress,
And realize that the silicon photo-detector technological means that generally uses compatible with signal processing circuit is both at home and abroad at present：(1) silicon light is visited
Survey device and MOS process compatibles.Pin-PD is produced simultaneously in CMOS technology, does not change standard CMOS process substantially, is to develop
High-speed light receiver most simple effective method.(2) SOI MOS techniques.CMOS electricity is manufactured with SOI material substitution Si body materials
Road, its advantage mainly has：Reduce device isolation region area；Reduce processing step；Suppress substrate current；Avoid latch-up；
With low parasitic capacitance, so as to reduce power consumption, the circuit of more high speed is realized.(3) SiGe/Si HBT techniques.SiGe skills
Art by the speed of Si base devices while new height is brought up to, and due to it and Si process compatibles, and it is low, reliable to maintain price
Property it is good and the advantages of be easy to multifunctional unit；And compared with CMOS technology, it has lower noise and more preferable power efficiency.
Prior art listed above is silicon photo-detector is compatible with the progress of MOS integrated circuit technologies, but existing
Also lack silicon photo-detector and another integrated circuit technology in technology, be also the silicon bipolar circuit technique of technique maturation the most
Carry out compatible technical scheme.And in photo-coupler design field, a large amount of ripe signal processing circuits are by the bipolar work of silicon
What skill was fabricated by, therefore we need to combine actual process condition reasonable selection material, technique and design high performance-price ratio
Structure, to realize that silicon photodetector is compatible with silicon bipolar integrated circuit technique.It is existing in a word in this special application field
There are technology or a blank.
The content of the invention
, can be with silicon bipolar integrated circuit it is an object of the invention to provide one kind for deficiencies of the prior art
Process compatible, and quantum efficiency is high, the small photoelectric acquisition sensor of dark current.
To achieve the above object, the present invention uses following technological means：
A kind of photoelectric acquisition sensor compatible with Si bipolar process, it is characterised in that including the first photodetector and
Second photodetector；
First photodetector includes the first device region, and the first device region of first photodetector is by NPN
The collecting zone of transistor is formed, and the horizontal direction section of the first device region of the first photodetector is square；
Second device region of M the first photodetectors is produced in the first device region of the first photodetector, and M is small
In 10 natural number, the second device region of first photodetector is formed by the base of NPN transistor, the NPN crystal
Pipe is made by Si bipolar process；
First device region of first photodetector is provided with electrode hole, the second device region of the first photodetector
It is provided with electrode hole；
All electrode holes being arranged on first the second device region of photodetector are connected with each other by aluminium film connecting line, even
Connect the Second terminal that electrical nodes are designated as the first photodetector；
The electrode hole being arranged on the first device region of the first photodetector is drawn by aluminium film connecting line, is designated as first
The first terminal of photodetector；
Second photodetector includes the first device region, and the first device region of second photodetector is by NPN
The collecting zone of transistor is formed, and the horizontal direction section of the first device region of the second photodetector is square；
Second device region of M the second photodetectors is produced in the first device region of the second photodetector, and M is small
In 10 natural number, the second device region of second photodetector is formed by the base of NPN transistor, the NPN crystal
Pipe is made by Si bipolar process；
First device region of second photodetector is provided with electrode hole, the second device region of the second photodetector
It is provided with electrode hole；
All electrode holes being arranged on second the second device region of photodetector are connected with each other by aluminium film connecting line, even
Connect the Second terminal that electrical nodes are designated as the second photodetector；
The electrode hole being arranged on the first device region of the second photodetector is drawn by aluminium film connecting line, is designated as
The first terminal of two photodetectors；
Second photodetector surfaces are covered with aluminium film；
First photodetector and the second photodetector are symmetricly set in single-chip；
The first terminal of first photodetector is electrically connected with the first terminal of the second photodetector.
Further, the second device region horizontal direction section of first photodetector is circle；Second light
Second device region horizontal direction section of electric explorer is circle.
Compared with prior art, the present invention has the advantages that：
(1) because the present invention uses the PN junction of bipolar process to be used as the foundation structure for realizing photodetection so that design
Larger (junction area of the current collection junction area of bipolar NPN transistor with respect to MOS techniques formation PN junction of PN junction area of photodetector
It is big), PN junction depth is big (relative to MOS techniques), and depletion region is thicker, is conducive to improving quantum efficiency.This foundation structure makes
Obtain the beneficial effect of the invention being had a clear superiority in terms of the sub- efficiency of higher amount is obtained.
Further, present invention selection bipolar process realizes that circuit will be more suitable for power-type photo-coupler photodetection
Device and signal processing circuit it is integrated, power-type photo-coupler output par, c generally requires larger driving force, therefore letter
Number process circuit has compared to selection MOS techniques can realize the beneficial effect of larger driving force.
(2) technological means that present invention reduction detector PN junction diode depletion region capacitance is used is by M second
Device region is produced in the first device region of the first photodetector (two photodetectors use this structure), therefore detection
Device area is reduced, and that is to say actually includes the less detector of multiple areas, detector in a detection sensor
Area reduces, but will not reduce PN junction depth again, from the beneficial effect without the sub- efficiency of influence amount, therefore with fast response time
Really.
Brief description of the drawings
Fig. 1 is structural representation of the invention；
Fig. 2 is the vertical structure schematic diagram of the first photodetector in the present invention.
Embodiment
With reference to the accompanying drawings and examples, the present invention is described in further details.
When photodetector is designed, primary concern is that its noise, quantum efficiency, several technical indicators such as responsiveness.
In order to which specific design of the present invention is described in detail.The overall structure of the present invention is done an elaboration by us first,
Some concrete structures of inventive sensor are explained then in conjunction with the performance parameter design of photoelectric acquisition sensor.
First, overall structure of the present invention.
As shown in figure 1, a kind of photoelectric acquisition sensor compatible with Si bipolar process, including the He of the first photodetector 1
Second photodetector 2；First photodetector 1 is identical with the structure of the second photodetector 2, and all uses silicon bipolar set
It is made into circuit technology；First photodetector 1 and the second photodetector 2 are respectively provided with two signal terminals.
The surface of second photodetector 2 is covered with aluminium film；
The photodetector 2 of first photodetector 1 and second is symmetricly set in single-chip, and this is by collection certainly
Two photodetectors are plotted in symmetric position when being designed into circuit layout, in follow-up ic manufacturing process,
Two photodetectors are symmetrically integrated on same circuit of single-chip integrated on tube core naturally.
2nd, the performance parameter design of photoelectric acquisition sensor of the present invention.
In order to which the design of performance parameter is illustrated into clear, the work that we introduce common photoelectric testing sensor first is former
Reason, this is also the basic functional principle and the course of work of the present invention.
The key property parameter of photodetector includes：
1) quantum efficiency and responsiveness
The definition of quantum efficiency, to absorb the electron-hole pair number that an incident photon can be produced, is semiconductor light
The most important index of detector, can be expressed as：
(1)
Wherein α (λ) is corresponding wavelength λ absorption coefficient, and W is depletion layer thickness.It can be seen that, increase with the absorption coefficient of material
Big or depletion layer is thickened, and the quantum efficiency of detector is higher.
The first device region of photodetector is formed by the collecting zone of NPN transistor in the present invention, and the of photodetector
Two device regions are formed by the base of NPN transistor, and NPN transistor is made by Si bipolar process；In other words photodetection
The PN junction of device is formed by the bipolar NPN transistor technological process of making Simulation scale-up process circuit, and the two is compatible.And it is universal
Bipolar process NPN pipe basic structure sizes be；Minimum feature size is 6 μm, 12 μm of epitaxy layer thickness, the Ω of resistivity about 2.5
.cm, 2.2-2.6 μm of base junction depth, in other words the PN junction depth for photodetector of bipolar process manufacture is 2.2-2.6
μm。
The PN junction depth for photodetector of common MOS techniques formation is 0.3 μm, and this is by MOS techniques certainly
Feature itself determine, with MOS process signal process circuits integrated photodetector relatively be applied to fiber optic communication field.
Therefore, because the present invention is used as the foundation structure for realizing photodetection using the PN junction of bipolar process so that design
Photodetector PN junction area it is larger (the current collection junction area of bipolar NPN transistor with respect to MOS techniques formation PN junction junction
Product is big), PN junction depth is big (relative to MOS techniques), and depletion region is thicker, is conducive to improving quantum efficiency.This foundation structure
So that the present invention has a clear superiority in terms of the sub- efficiency of higher amount is obtained.
Further, present invention selection bipolar process realizes that circuit will be more suitable for power-type photo-coupler photodetection
Device and signal processing circuit it is integrated, power-type photo-coupler output par, c generally requires larger driving force, therefore letter
Number process circuit has compared to selection MOS techniques can realize the beneficial effect of larger driving force.
In a word, for power-type photo-coupler output par, c circuit integration need (while integrated electro probe unit and
Signal transacting driver element), using bipolar process feature itself, the present invention has selected junction depth larger with reference to actual process situation
Colelctor electrode as photodetector basic structure, this is conducive to the quantum efficiency for improving detector.Generally make in prior art
In the case of realizing photo-detector with MOS techniques, the present invention make it is selected above be the present invention first innovative point, be also
The starting point of whole creative work.This is extremely important for the final structure proposition of detector, because selected above both cause work(
Rate type photo-coupler output par, c circuit integration need (while integrated electro probe unit and signal transacting driver element) into
For possibility, cause that the raising of quantum efficiency, will not be due to technology controlling and process in manufacturing process with the advantage in foundation structure again
Defect so that quantum efficiency is too low.
The basic structure that photodetector of the present invention is in other words formed using bipolar NPN transistor technological process is being improved
There is innate advantage in terms of quantum efficiency.
And in actual detector, light directly can not possibly reach uptake zone by material surface, but to pass through necessarily
The middle doping contact zone of thickness, can cause a part of photonic losses in this region, while the reflection in detector surface is made
With can also make portion of incident light reflection loss.Based on these factors, (1) formula can be rewritten as：
η=(1-Rf)·e-α(λ)-d·(1-e-α(λ)·W) (2)
Wherein d is front end contact layer thickness, and Rf is the reflectivity of detector surface, incides the photon generation of uptake zone
Photo-generated carrier is in the presence of depletion region built in field, to the two poles of the earth drift motion of detector, and in output end formation photoelectricity
Stream.
Based on this analysis, second device region 12 surface deposition anti-reflection film of the present invention in the first photodetector；(anti-reflection film
It is made up of silica and silicon nitride)；Or the mode of the SI02 layers and passivation layer that erode device surface can be taken to reduce
The loss of light emitted energy, these are all the further Optimized Measures for improving quantum efficiency.
In addition, the second device region 12 and the second device region of the second photodetector of the first photodetector of the present invention
22 can use circular configuration, and this is conducive to improving photechic effect, and this is also beneficial to the raising of quantum efficiency and responsiveness.
But circular configuration is big due to area, the increase of device surface leakage current is also resulted in.
2) response speed
The response speed of photodetector is rise time or fall time by detectable signal to weigh, and generally takes two
Larger value between person.Usually require that photodetector can to high-speed optical pulse signal quick response, so as to improve signal to noise ratio,
The overall performance of raising system.In semiconductor photo detector, the factor of influence response speed mainly has at 3 points：
A. transition time of depletion region carriers.B. depletion region outer carrier diffusion time.C. the pole of detector PN junction two
Pipe depletion region capacitance.The electric capacity of depletion layer is to influence the principal element of speed, and this means that the detector of large area can not be used
In the higher optical signal of look-in frequency.Junction capacity and dark current can effectively be reduced by reducing the area of detector.
Particular technique means of the present invention are that M the second device regions are being produced on into the of the first photodetector
In one device region (two photodetectors use this structure), therefore detector area is reduced, and that is to say a spy
Surveying actually includes the less detector of multiple areas in sensor, detector area reduces, but will not reduce PN junction knot again
It is deep, from without the sub- efficiency of influence amount.The reduction of detector device area can also reduce due to using circular configuration to carry simultaneously
Device surface leakage current increase defect caused by high photechic effect.
3) leakage current and noise
, should be without photoelectric current when no light to preferable photodetector, but actually there are still have
Less electric current.It is mainly the generation-recombination current of carrier and few sub- dissufion current of depletion layer boundaries in depletion layer,
And tracking current is constituted.Because the energy gap of silicon is larger, as long as avoid producing lattice defect in process as far as possible,
Ensure the high-purity of silicon, it is very little (2 × 10-11A/mm2 of ＜) to produce-be combined caused leakage current by carrier.Except preceding
The leakage current that reduced by the reduction device area table of device structure design stated produces possibility, and face leakage current can be by blunt
Change surface to reduce, can be reduced under 2 × 10-11A/mm2.That is to say can set about improvement property in terms of semiconductor technology
Energy.
Increase epitaxy layer thickness and resistivity etc. process meanses are additionally used in the present invention and improve responsiveness.
3rd, the concrete structure design and application method of photoelectric acquisition sensor of the present invention.
As shown in Fig. 2 the first photodetector 1 includes the first device region 11, the first device region of the first photodetector
11 are formed by the collecting zone of NPN transistor, and the horizontal direction section of the first device region 11 of the first photodetector is square
(in order to improve photechic effect, circle can also be selected, but simultaneously because circular area is larger, also bring device surface leakage current
Increased risk, selects the level of the first device region 11 according to technique maturity itself and technique controlling difficulty when specific implementation
Direction cross sectional shape；
Second device region 12 of M the first photodetectors is produced on the first device region 11 of the first photodetector, M
For the natural number less than 10, the second device region 12 of the first photodetector is formed by the base of NPN transistor, NPN transistor
It is made by Si bipolar process；
First device region 11 of the first photodetector is provided with multiple electrodes hole, each the second of the first photodetector
Device region 12 is provided with electrode hole；
The electrode hole being arranged on the first device region 11 of the first photodetector is drawn by aluminium film connecting line, is designated as
The first terminal 13 of one photodetector；
All electrode holes being arranged on first the second device region of photodetector are connected with each other by aluminium film connecting line (should
Not shown in aluminium film connecting line Fig. 2), connection electrical nodes are designated as the Second terminal of the first photodetector；
The first terminal 13 of first photodetector is electrically connected with the first terminal 23 of the second photodetector；
Second photodetector 2 is used and the identical structure of the first photodetector 1, the surface of the second photodetector 2
Covered with aluminium film, certainly, silica is used between the aluminium film for connection electrode hole and the aluminium film for covering device surface
Material layer is kept apart；
First photodetector 1 and the second photodetector 2 are symmetricly set in single-chip.
The present invention application method be：By photoelectric acquisition sensor of the present invention with having differential input level signal processing circuit
Integrate, the Second terminal of the first photodetector 1, the Second terminal of the second photodetector 2 is respectively at differential input
Two inputs of level circuit are electrically connected；Due to the first photodetector 1, the second photodetector 2 is identical two
(the first photodetector 1 receives optical signal to individual photodetector, and the second photodetector 2 covers aluminium film due to device surface
Therefore aiming screen covers), input biasing circuit provides common reference voltage stably, so same interference source almost phase for them
With every one end for having influence on differential wave of degree, appear in the same interference on differential both sides and can just be ignored and serve suppression
The effect of external electromagnetic interference processed.In addition exact value of the differential wave largely with bias potential is unrelated, even if biased electrical
Position has minor variations also not interfere with the numerical value of measurement signal.
Finally illustrate, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted, although with reference to compared with
The present invention is described in detail good embodiment, it will be understood by those within the art that, can be to skill of the invention
Art scheme is modified or equivalent substitution, and without departing from the objective and scope of technical solution of the present invention, it all should cover at this
Among the right of invention.
Claims (2)
1. a kind of photoelectric acquisition sensor compatible with Si bipolar process, it is characterised in that including the first photodetector and
Two photodetectors；
First photodetector includes the first device region, and the first device region of first photodetector is by NPN crystal
The collecting zone of pipe is formed, and the horizontal direction section of the first device region of the first photodetector is square；
Second device region of M the first photodetectors is produced in the first device region of the first photodetector, and M is less than 10
Natural number, the second device region of first photodetector formed by the base of NPN transistor, the NPN transistor by
Si bipolar process is made；
First device region of first photodetector is provided with electrode hole, the second device region of the first photodetector and set
There is electrode hole；
All electrode holes being arranged on first the second device region of photodetector are connected with each other by aluminium film connecting line, connection electricity
Node is designated as the Second terminal of the first photodetector；
The electrode hole being arranged on the first device region of the first photodetector is drawn by aluminium film connecting line, is designated as the first photoelectricity
The first terminal of detector；
Second photodetector includes the first device region, and the first device region of second photodetector is by NPN crystal
The collecting zone of pipe is formed, and the horizontal direction section of the first device region of the second photodetector is square；
Second device region of M the second photodetectors is produced in the first device region of the second photodetector, and M is less than 10
Natural number, the second device region of second photodetector formed by the base of NPN transistor, the NPN transistor by
Si bipolar process is made；
First device region of second photodetector is provided with electrode hole, the second device region of the second photodetector and set
There is electrode hole；
All electrode holes being arranged on second the second device region of photodetector are connected with each other by aluminium film connecting line, connection electricity
Node is designated as the Second terminal of the second photodetector；
The electrode hole being arranged on the first device region of the second photodetector is drawn by aluminium film connecting line, is designated as the second photoelectricity
The first terminal of detector；
Second photodetector surfaces are covered with aluminium film；
First photodetector and the second photodetector are symmetricly set in single-chip；
The first terminal of first photodetector is electrically connected with the first terminal of the second photodetector.
2. a kind of photoelectric acquisition sensor compatible with Si bipolar process according to claim 1, it is characterised in that described
Second device region horizontal direction section of the first photodetector is circle；Second device region water of second photodetector
Square to section for circle.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044531A (en) * | 1989-01-28 | 1990-08-08 | 武汉大学 | Photoelectric detector with internal modulation and indirect coupling |
| CN203690302U (en) * | 2014-01-23 | 2014-07-02 | 天津大学 | Photoelectric detector with spatial modulation structure |
| CN204946901U (en) * | 2015-08-16 | 2016-01-06 | 重庆电子工程职业学院 | A kind of photoelectric acquisition sensor with Si bipolar process compatibility |
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| JP6086648B2 (en) * | 2012-03-12 | 2017-03-01 | 国立研究開発法人産業技術総合研究所 | Phototransistor and imaging device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1044531A (en) * | 1989-01-28 | 1990-08-08 | 武汉大学 | Photoelectric detector with internal modulation and indirect coupling |
| CN203690302U (en) * | 2014-01-23 | 2014-07-02 | 天津大学 | Photoelectric detector with spatial modulation structure |
| CN204946901U (en) * | 2015-08-16 | 2016-01-06 | 重庆电子工程职业学院 | A kind of photoelectric acquisition sensor with Si bipolar process compatibility |
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