CN105097743B - Bonding structure and forming method thereof - Google Patents
Bonding structure and forming method thereof Download PDFInfo
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- CN105097743B CN105097743B CN201410199435.3A CN201410199435A CN105097743B CN 105097743 B CN105097743 B CN 105097743B CN 201410199435 A CN201410199435 A CN 201410199435A CN 105097743 B CN105097743 B CN 105097743B
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Abstract
This application discloses a kind of bonding structure and forming method thereof, which includes: bonded layer, and bonded layer includes bond wire and Grain refiner material, and Grain refiner material is used to refine the crystal grain of bond wire.The application is poor for the mechanical strength for solving the problems, such as bonded layer in the prior art, making bonded layer includes bond wire and the Grain refiner material for refining bond wire crystal grain, in this way, can so that bond wire crystal grain refinement, and then the mechanical strength of bonded layer can be improved, so that the structure of bonded layer is more firm, the bonded layer for efficiently avoiding occurring bonding structure is easy the problem of loosening, falling off.
Description
Technical field
This application involves the technical fields of integrated circuit, in particular to a kind of bonding structure and forming method thereof.
Background technique
Wafer bonding techniques be by two panels surface cleaning, the homogeneity of atomic roughness or dissimilar materials through surface clean and
After activation processing, any adhesive substance is not used, is directly fitted under certain condition integrally, two panels crystal passes through Van der Waals
Power, molecular force or even atomic force combine.This wafer bonding techniques utilize bonding structure realization, bonding structure
It can be understood as a kind of connecting element.
Wafer bonding techniques have great superiority, have secured, smooth, optical lens by the interface that this technology obtains
Bright advantage, this interface have very important significance for the innovation of optical device.
In the prior art, as shown in Figure 1, general bonding structure includes bonded layer 1 and carrier layer 2, and bonded layer 1 only by
Single bond wire is made, and the crystal grain of this bond wire is larger.
Those skilled in the art it is known that, the size of crystal grain has a great impact to the performance of metal material, below
Influence according to the size of crystal grain to metal material carries out detailed analysis: " boundary " between crystal grain is known as crystal boundary, and " brilliant
" crackle " in boundary " and similar material, then " crackle " in the more big then material of crystal grain is also bigger；Secondly, intra-die
Atomic arrangement is more regular, is easy to produce " sliding ", and the atomic arrangement on crystal boundary is more in disorder, exist many " dislocation " and
" between splitting " so that not easy glide and deformation between atomic plane, then when crystal grain is tiny, in sliding deformation it is just smaller and can quilt
Crystal boundary effectively inhibits；Third, crystal grain, crystal boundary are all more tiny, and external total heavy burden and deformation will be distributed on more crystal grain,
A possibility that just reducing the material breakage in this way.
In addition, according to Hall-Patch formula: σy=σ0+ kd-1/2, σ in formulayFor the yield strength of material, σ0For monocrystalline
The yield strength of body, d are crystallite dimension, and k is constant, and k and Taylor factor M2(k ∝ M directly proportional with shear stress τ2τ).Above formula
Show that crystal grain is thinner, interdendritic is away from smaller, and yield strength is higher, while hardness is better.The theoretical origin explains principle as position
Wrong strengthening mechanism and crack propagation mechanism.
By analysis it is found that the crystal grain of metal material is smaller, intensity, plasticity, the toughness of metal will be higher.
However, the crystal grain of the bond wire of bonded layer 1 in the prior art is larger, " crackle " between crystal grain is also got over
Greatly, this makes the mechanical strength of bonded layer 1 poor, is easy to happen sliding and change between the atomic plane of the intra-die of bond wire
Shape is easy to appear the problem of bonded layer is loosened, fallen off so as to cause the bonding structure.
Summary of the invention
The application is intended to provide a kind of bonding structure and forming method thereof, to solve the bonding of bonding structure in the prior art
The poor problem of the mechanical strength of layer.
To achieve the goals above, the one aspect of the application provides a kind of bonding structure, comprising: bonded layer, bonding
Layer includes bond wire and Grain refiner material, and Grain refiner material is used to refine the crystal grain of bond wire.
Further, bond wire is metallic aluminium.
Further, Grain refiner material is rare metal.
Further, Grain refiner material is Titanium.
Further, bonding structure further include: carrier layer, bonded layer are arranged on a carrier layer.
Further, carrier layer includes: adhesion layer and dielectric layer, and adhesion layer is arranged on dielectric layer, and bonded layer is arranged
On adhesion layer.
Further, dislodger is provided on adhesion layer, and bonded layer is arranged in dislodger.
Further, bonded layer is arranged by bond wire and Grain refiner material layering, and bonding structure includes more
Layer bonded layer.
Further, bonding structure includes 2 to 10 layers of bonded layer.
Further, adhesion layer is formed by plasma enhanced oxide.
Further, dielectric layer is formed by silicon nitride.
Further, bonded layer is mixed by bond wire and Grain refiner material.
Further aspect of the application provides a kind of method for forming bonding structure, comprising: by bond wire and be used for
The Grain refiner material for refining the crystal grain of bond wire, which combines, forms bonded layer.
Further, the method for forming bonded layer includes: one layer of bond wire of deposition；A layer crystal is deposited on bond wire
Grain refiner material.
Further, method further include: repeat alternately to deposit bond wire and Grain refiner material.
Further, the deposition thickness of Grain refiner material is 0.1 to 10nm.
Further, the depositing temperature of Grain refiner material is 5 to 300 degrees Celsius.
Using the technical solution of the application, which includes: bonded layer, and bonded layer includes that bond wire and crystal grain are thin
Change material, Grain refiner material is used to refine the crystal grain of bond wire.The application is in order to solve bonded layer in the prior art
The poor problem of mechanical strength makes bonded layer include bond wire and the Grain refiner material for refining bond wire crystal grain,
In this way, can so that bond wire crystal grain refinement, and then the mechanical strength of bonded layer can be improved, so that the structure of bonded layer
More firm, the bonded layer for efficiently avoiding occurring bonding structure is easy the problem of loosening, falling off.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 shows the structural schematic diagram of bonding structure in the prior art；And
Fig. 2 shows the structural schematic diagrams of the bonding structure in the application.
Description of symbols: 1, bonded layer；2, carrier layer；10, bonded layer；11, bond wire；12, Grain refiner material；
20, carrier layer；21, adhesion layer；22, dielectric layer；23, dislodger.
Specific embodiment
It should be noted that in the absence of conflict, the features in the embodiments and the embodiments of the present application can phase
Mutually combination.The application is described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also be intended to include plural form, additionally, it should be understood that, when in the present specification using belong to "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
For ease of description, spatially relative term can be used herein, as " ... on ", " ... top ",
" ... upper surface ", " above " etc., for describing such as a device shown in the figure or feature and other devices or spy
The spatial relation of sign.It should be understood that spatially relative term is intended to comprising the orientation in addition to device described in figure
Except different direction in use or operation.For example, being described as if the device in attached drawing is squeezed " in other devices
It will be positioned as " under other devices or construction after part or construction top " or the device of " on other devices or construction "
Side " or " under other devices or construction ".Thus, exemplary term " ... top " may include " ... top " and
" in ... lower section " two kinds of orientation.The device can also be positioned with other different modes and (is rotated by 90 ° or in other orientation), and
And respective explanations are made to the opposite description in space used herein above.
As described in background technique, as shown in Figure 1, bonding structure in the prior art includes bonded layer 1 and carries
Body layer 2, which is arranged in carrier layer 2, and bonded layer 1 is only made of single bond wire, and this bond wire exists
The crystal grain generated during crystallization is larger, and the crystal boundary between crystal grain is also larger, i.e., " crackle " in bond wire material is bigger,
It is easy to happen sliding and deformation between atomic plane between intra-die, there are keys so as to cause bonding structure in the prior art
The mechanical strength for closing layer is poor, is easy to appear bonded layer loosens, the defect that falls off, present inventor regarding to the issue above into
Row research, proposes a kind of bonding structure and forming method thereof.
The bonding structure that a kind of preferred embodiment of the application provides is as shown in Fig. 2, the bonding structure includes: bonded layer
10, bonded layer 10 includes bond wire 11 and Grain refiner material 12, and Grain refiner material 12 is for refining bond wire 11
Crystal grain.
The application is poor for the mechanical strength for solving the problems, such as bonded layer in the prior art, and making bonded layer 10 includes key
Alloy belongs to 11 and the Grain refiner material 12 for refining 11 crystal grain of bond wire, in this way, can so that bond wire 11 crystalline substance
Grain refinement, and then the mechanical strength of bonded layer can be improved, so that the structure of bonded layer is more firm, efficiently avoid occurring
The bonded layer of bonding structure is easy the problem of loosening, falling off.
As a kind of preferred embodiment of the application, bond wire 11 is metallic aluminium.It, can also according to practical situation
To select metallic copper as the bond wire 11 in the application.
Grain refiner material 12 can react after contacting with bond wire 11 and generate compound, the compound and liquid
The contact surface of bond wire 11 is effective forming core basal plane when bond wire 11 solidifies, and therefore, Grain refiner material 12 can increase
Add the nucleation rate of bond wire 11, and then refine the crystal grain of bond wire 11, so that increase bonded layer 10 draws high intensity, mentions
The mechanical performances such as the high toughness of bonded layer 10.In this application, Grain refiner material 12 is rare metal.According to practical feelings
Condition can also select titanium boron fining agent and al-ti-b refiner as Grain refiner material 12.
Preferably, which is Titanium.According to the actual situation, staff can choose tantalum, niobium,
The rare metals such as zirconium, molybdenum, tungsten, vanadium, titanium are as Grain refiner material 12.When depositing bond wire 11, staff can lead to
It crosses and above-mentioned Grain refiner material 12 is added, to realize the refinement of crystal grain.The refining effect of above-mentioned Grain refiner material 12 is main
Be: bond wire 11 and above-mentioned Grain refiner material 12 react and generate dystectic compound, when the bonding of liquid
When metal 11 solidifies, those high melting compounds can play the role of increasing the nuclei of crystallization, to guarantee that the bond wire 11 obtains
Thinner crystal grain；In addition, these compounds all play the role of mechanical obstruction simultaneously again, the fine grain formed can be made to be not easy
It grows up, has further achieved the effect that refine crystal grain.
It is metallic aluminium below with reference to bond wire 11, Grain refiner material 12 is the embodiment of Titanium, analysis bonding gold
Belong to the process of 11 crystal grain refinement: peritectic reaction can occur after Titanium and Al Contact and generate Titanium Trialuminum, Titanium Trialuminum
Effective forming core basal plane when contact surface with the metallic aluminium of liquid is solidified aluminum, in this way, the nucleation rate of metallic aluminium is substantially increased, from
And the crystalline structure of metallic aluminium is refined.
In this application, bonding structure further include: carrier layer 20, bonded layer 10 are arranged in carrier layer 20.Preferably, it carries
Body layer 20 includes: adhesion layer 21 and dielectric layer 22, and adhesion layer 21 is arranged on dielectric layer 22, and bonded layer 10 is arranged in adhesion layer
On 21.
Preferably, dislodger 23 is provided on adhesion layer 21, and bonded layer 10 is arranged in dislodger 23.The application passes through
The position for bonded layer to be arranged is limited, can purposefully arrange and shapes the bonding structure, preciousness can be saved in this way
Noble metal.In addition, the application can increase bond wire 11 and adhesion layer by being arranged bonded layer 10 in dislodger 23
Contact area between 21, and then the bonding force between bond wire 11 and adhesion layer 21 can be increased.
In an embodiment in this application, bonded layer 10 is set by bond wire 11 and the layering of Grain refiner material 12
It sets, and bonding structure includes multilayer bonded layer 10.Firstly, staff can first deposit one layer of bond wire 11, then
One layer of Grain refiner material 12 is deposited on this layer of bond wire 11, can form first layer bonded layer 10 in this way；Then, work people
Member can refer to above-mentioned step and deposit the second layer on first layer bonded layer 10 layer by layer to n-th layer bonded layer 10.Preferably, key
Closing structure includes 2 to 10 layers of bonded layer 10.This layering setting method can be such that bond wire 11 and Grain refiner material 12 divides
Cloth it is relatively uniform.This deposition method make the thickness degree of bond wire 11 and Grain refiner material 12 in bonded layer 10 compared with
It is thin, so that the structure of bonded layer 10 is more uniform, be conducive to generate lesser crystal grain.
In this application, adhesion layer 21 is formed by plasma enhanced oxide.Preferably, adhesion layer 21 is enhanced by plasma
Silica is formed.After being provided with adhesion layer 21 in the application, the contact force between carrier layer 20 and bonded layer 10 can be enhanced, have
It avoids to effect and occurs between bonded layer 10 and carrier layer 20 that there is a situation where be detached from.
In this application, dielectric layer 22 is formed by silicon nitride.
In another embodiment in this application, bonded layer 10 is mixed by bond wire 11 and Grain refiner material 12
It forms.The forming method of this bonded layer 10 are as follows: during depositing bond wire 11, while it being passed through Grain refiner material,
So that bond wire 11 and the reaction of Grain refiner material 12 form the bonded layer 10.According to the actual situation, staff can be
Same position deposits bond wire 11 and Grain refiner material 12 simultaneously, and the two is made to be mixed to form the bonded layer 10.It is this
Deposition method can make bond wire 11 come into full contact with Grain refiner material 12, and then improve the forming core of bond wire 11
Rate.
In addition, present invention also provides a kind of methods for forming bonding structure, comprising: by bond wire and be used to refine key
The Grain refiner material for the crystal grain that alloy belongs to combines and forms bonded layer.The bonded layer formed in this way has preferable machine
Tool intensity.
As one of the application preferred embodiment, the method for forming bonded layer includes: one layer of bonding gold of deposition
Belong to；One layer of Grain refiner material is deposited on bond wire.The deposition of above-mentioned bond wire and Grain refiner material can use
The method of chemical vapor deposition or physical vapour deposition (PVD) etc. is implemented.
Road as is known in the art, chemical vapour deposition technique is traditional technology for preparing film,
Principle is using gaseous pioneer's reactant, by atom, intermolecular chemical reaction, so that certain ingredients in gaseous precursor
It decomposes, and forms film on matrix.Chemical vapor deposition includes that aumospheric pressure cvd, plasma auxiliary chemical are heavy
Product, Laser-assisted chemical deposition, metallo-organic compound deposition etc..Such as the bond wire can be deposited using the method for sputtering
And Grain refiner material, it is possible thereby to generate relatively thin and uniform thickness degree.Sputtering is a kind of physical gas phase deposition technology, it is
Describe that the atom in solid target is left the physical process that solid enters gas by high energy ion shock, and in sputtering process
Ion is usually from plasma.The advantages of sputtering is the film that can prepare materials with high melting point at a lower temperature, is being prepared
Keep former composition constant during alloy and compound film, so having obtained in semiconductor devices and IC manufacturing
It is widely applied.
According to practical situation, which can also be deposited using the deposition method of electrochemistry, pass through electrochemistry
The bond wire of deposition method deposition has more smooth, uniform thickness degree.Such as this can be deposited by electric plating method
Bond wire and Grain refiner material, electroplating technology are also known as electro-deposition, are the main sides for obtaining the coat of metal on the surface of the material
One of method, principle are to constitute circuit under the action of DC electric field by anode and cathode in electrolyte solution (plating solution), make
The process on metal ion deposition to cathode plating piece surface in solution.
In this application, this method further include: repeat alternately to deposit bond wire and Grain refiner material.In this way, just
The bonded layer that bond wire and Grain refiner material are layered on top of each other can be formed.
Preferably, the deposition thickness of Grain refiner material is 0.1 to 10nm.The bonded layer can be with preset thickness (example
Thickness such as between 1nm and 10000nm, the thickness especially between 10nm and 1000nm) it deposits.By this default
Thickness degree can limit bonded layer inside particle size.In the case where lesser particle, a kind of material can be opposite
There is improved material property in average state, such as improve tensile strength and/or bigger hardness.Lesser particle is being bonded
A large amount of nucleus are provided in the process, are increased for the crystal beyond interface.
Preferably, the depositing temperature of Grain refiner material is 5 to 300 degrees Celsius.
As another preferred embodiment in the application, the method for forming bonded layer includes: in deposition bonding gold
During category, while it being passed through Grain refiner material, so that bond wire and Grain refiner material react to form bonded layer.
It can be seen from the above description that the application the above embodiments realize following technical effect:
The crystal grain of bond wire is refined, and then the machinery for improving bonded layer is slight, so as to avoid bonding structure
The problem of bonded layer is easy to appear loosening, falls off.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (10)
1. a kind of bonding structure characterized by comprising
Bonded layer, the bonded layer include bond wire and Grain refiner material, and the Grain refiner material is described for refining
The crystal grain of bond wire；The bonded layer is arranged by the bond wire and Grain refiner material layering, and described
Bonding structure includes bonded layer described in multilayer；
Carrier layer, the bonded layer are arranged in the carrier layer；
Wherein, the carrier layer includes adhesion layer and dielectric layer, and the adhesion layer is arranged on the dielectric layer, and the bonding
Layer is arranged on the adhesion layer；
The bonding structure includes 2 to 10 layers of bonded layer.
2. bonding structure according to claim 1, which is characterized in that the bond wire is metallic aluminium.
3. bonding structure according to claim 1, which is characterized in that the Grain refiner material is rare metal.
4. bonding structure according to claim 3, which is characterized in that the Grain refiner material is Titanium.
5. bonding structure according to claim 1, which is characterized in that be provided with dislodger on the adhesion layer, and described
Bonded layer is arranged in the dislodger.
6. bonding structure according to claim 1, which is characterized in that the adhesion layer is by plasma enhanced oxide shape
At.
7. bonding structure according to claim 1, which is characterized in that the dielectric layer is formed by silicon nitride.
8. a kind of method for forming bonding structure characterized by comprising
The Grain refiner material of bond wire and the crystal grain for being used to refine the bond wire is combined and forms bonded layer；
Deposit one layer of bond wire；
One layer of Grain refiner material is deposited on the bond wire；
Repetition alternately deposits the bond wire and the Grain refiner material.
9. according to the method described in claim 8, it is characterized in that, the deposition thickness of the Grain refiner material be 0.1 to
10nm。
10. according to the method described in claim 8, it is characterized in that, the depositing temperature of the Grain refiner material is 5 to 300
Degree Celsius.
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| CN201410199435.3A CN105097743B (en) | 2014-05-12 | 2014-05-12 | Bonding structure and forming method thereof |
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| CN201410199435.3A CN105097743B (en) | 2014-05-12 | 2014-05-12 | Bonding structure and forming method thereof |
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| CN105097743B true CN105097743B (en) | 2019-02-12 |
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| CN109755365A (en) * | 2019-01-03 | 2019-05-14 | 佛山市国星半导体技术有限公司 | A kind of light emitting diode (LED) chip with vertical structure and preparation method thereof |
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| DE10208635B4 (en) * | 2002-02-28 | 2010-09-16 | Infineon Technologies Ag | Diffusion soldering station, composite of two parts connected via a diffusion soldering station and method for producing the diffusion soldering station |
| US7276801B2 (en) * | 2003-09-22 | 2007-10-02 | Intel Corporation | Designs and methods for conductive bumps |
| US7410899B2 (en) * | 2005-09-20 | 2008-08-12 | Enthone, Inc. | Defectivity and process control of electroless deposition in microelectronics applications |
| US8128868B2 (en) * | 2009-02-12 | 2012-03-06 | International Business Machines Corporation | Grain refinement by precipitate formation in PB-free alloys of tin |
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