CN105097743A - Bonding structure and forming method thereof - Google Patents
Bonding structure and forming method thereof Download PDFInfo
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- CN105097743A CN105097743A CN201410199435.3A CN201410199435A CN105097743A CN 105097743 A CN105097743 A CN 105097743A CN 201410199435 A CN201410199435 A CN 201410199435A CN 105097743 A CN105097743 A CN 105097743A
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Abstract
The application discloses a bonding structure and a forming method thereof. The bonding structure comprises a bonding layer. The bonding layer comprises a bonding metal and a grain refinement material. The grain refinement material is used for refining the bonding metal. The application is aimed at solving the problem that the mechanical strength of a bonding layer is poor in terms of the prior art, and the bonding layer of the invention comprises the bonding metal and the grain refinement material for refining bonding metal grains. In this way, grain refinement of the bonding metal is achieved, the mechanical strength of the bonding layer is improved, the structure of the bonding layer is more stable, and the bonding layer of the bonding structure is effectively prevented from loosening and falling.
Description
Technical field
The application relates to the technical field of integrated circuit, in particular to a kind of bonding structure and forming method thereof.
Background technology
Wafer bonding techniques be by the homogeneity of two panels surface cleaning, atomic roughness or dissimilar materials after surface clean and activation processing, do not use any adhesive substance, directly laminating is integral under certain condition, and two panels crystal is by Van der Waals force, molecular force, and even atomic force combines.This wafer bonding techniques utilizes bonding structure to realize, and bonding structure can be understood as a kind of Connection Element.。
Wafer bonding techniques has great superiority, and the interface obtained by this technology has firm, level and smooth, optically transparent advantage, and this interface has very important significance for the innovation of optical device.
In the prior art, as shown in Figure 1, general bonding structure comprises bonded layer 1 and carrier layer 2, and bonded layer 1 is only made up of single bond wire, and the crystal grain of this bond wire is larger.
Those skilled in the art knows, the performance of size to metal material of crystal grain has a great impact, according to the size of crystal grain, detailed analysis is carried out on the impact of metal material below: " border " between crystal grain is called crystal boundary, and " crackle " in " crystal boundary " similar material, " crackle " so in the larger then material of crystal grain is also larger; Secondly, the atomic arrangement of intra-die is comparatively regular, easy generation " slippage ", and atomic arrangement on crystal boundary is comparatively in disorder, there is many " dislocation " and " between splitting ", make not easy glide and distortion between atomic plane, when so crystal grain is tiny, the sliding deformation in it is just less and effectively can be suppressed by crystal boundary; 3rd, crystal grain, crystal boundary are all more tiny, and external total heavy burden and distortion will be distributed on more crystal grain, so just reduce the possibility of this material breakage.
In addition, according to Hall-Patch formula: σ
y=σ
0+ kd-1/2, σ in formula
yfor the yield strength of material, σ
0for the yield strength of monocrystal, d is crystallite dimension, and k is constant, and k and Taylor factor M
2be directly proportional with shear stress τ (k ∝ M
2τ).Above formula shows, crystal grain is thinner, and dendrite interval is less, and yield strength is higher, and hardness is better simultaneously.The interpretation principle of this theoretical origin is dislocation strengthening mechanism and crack propagation mechanism.
Known by analysis, the crystal grain of metal material is less, and the intensity of metal, plasticity, toughness just can be higher.
But, the crystal grain of the bond wire of bonded layer 1 of the prior art is larger, " crackle " between crystal grain is also larger, this makes the mechanical strength of bonded layer 1 poor, easily there is slippage and distortion between the atomic plane of the intra-die of bond wire, thus cause the problem that this bonding structure easily occurs that bonded layer loosens, comes off.
Summary of the invention
The application aims to provide a kind of bonding structure and forming method thereof, with the problem that the mechanical strength of the bonded layer solving bonding structure in prior art is poor.
To achieve these goals, an aspect of the application, provide a kind of bonding structure, comprising: bonded layer, bonded layer comprises bond wire and Grain refiner material, and Grain refiner material is used for the crystal grain of refinement bond wire.
Further, bond wire is metallic aluminium.
Further, Grain refiner material is rare metal.
Further, Grain refiner material is Titanium.
Further, bonding structure also comprises: carrier layer, and bonded layer is arranged on a carrier layer.
Further, carrier layer comprises: adhesion layer and dielectric layer, and adhesion layer is arranged on dielectric layer, and bonded layer is arranged on adhesion layer.
Further, adhesion layer is provided with dislodger, and bonded layer is arranged in dislodger.
Further, bonded layer is arranged by bond wire and Grain refiner material layering and forms, and bonding structure comprises multilayer bonded layer.
Further, bonding structure comprises 2 to 10 layers of bonded layer.
Further, adhesion layer is formed by plasma enhanced oxide.
Further, dielectric layer is formed by silicon nitride.
Further, bonded layer is mixed by bond wire and Grain refiner material.
Another aspect of the application, provides a kind of method forming bonding structure, comprising: by bond wire and be used for refinement bond wire crystal grain Grain refiner material combine formed bonded layer.
Further, the method forming bonded layer comprises: deposition one deck bond wire; Bond wire deposits one deck Grain refiner material.
Further, method also comprises: repeat alternately to deposit bond wire and Grain refiner material.
Further, the deposit thickness of Grain refiner material is 0.1 to 10nm.
Further, the depositing temperature of Grain refiner material is 5 to 300 degrees Celsius.
The technical scheme of application the application, this bonding structure comprises: bonded layer, and bonded layer comprises bond wire and Grain refiner material, and Grain refiner material is used for the crystal grain of refinement bond wire.The application is in order to the poor problem of the mechanical strength that solves bonded layer of the prior art, bonded layer is made to comprise bond wire and the Grain refiner material for refinement bond wire crystal grain, like this, just the grain refinement of bond wire can be made, and then the mechanical strength of bonded layer can be improved, make the structure of bonded layer more firm, efficiently avoid the problem occurring that the bonded layer of bonding structure easily loosens, come off.
Accompanying drawing explanation
The Figure of description forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the structural representation of bonding structure of the prior art; And
Fig. 2 shows the structural representation of the bonding structure in the application.
Description of reference numerals: 1, bonded layer; 2, carrier layer; 10, bonded layer; 11, bond wire; 12, Grain refiner material; 20, carrier layer; 21, adhesion layer; 22, dielectric layer; 23, dislodger.
Embodiment
It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.Below with reference to the accompanying drawings and describe the application in detail in conjunction with the embodiments.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
As what introduce in background technology, as shown in Figure 1, bonding structure of the prior art comprises bonded layer 1 and carrier layer 2, this bonded layer 1 is arranged in carrier layer 2, and bonded layer 1 is only made up of single bond wire, the crystal grain that this bond wire generates in the process of crystallization is larger, crystal boundary between crystal grain is also larger, namely " crackle " in bond wire material is larger, easily slippage and distortion is there is between atomic plane between intra-die, thus it is poor to cause bonding structure of the prior art to there is the mechanical strength of bonded layer, easily occur that bonded layer loosens, the defect come off, present inventor studies for the problems referred to above, propose a kind of bonding structure and forming method thereof.
As shown in Figure 2, this bonding structure comprises a kind of bonding structure preferred embodiment provided of the application: bonded layer 10, and bonded layer 10 comprises bond wire 11 and Grain refiner material 12, and Grain refiner material 12 is for the crystal grain of refinement bond wire 11.
The application is in order to the poor problem of the mechanical strength that solves bonded layer of the prior art, bonded layer 10 is made to comprise bond wire 11 and the Grain refiner material 12 for refinement bond wire 11 crystal grain, like this, just the grain refinement of bond wire 11 can be made, and then the mechanical strength of bonded layer can be improved, make the structure of bonded layer more firm, efficiently avoid the problem occurring that the bonded layer of bonding structure easily loosens, come off.
As the application one preferred embodiment, bond wire 11 is metallic aluminium.According to the situation of reality, metallic copper also can be selected as the bond wire 11 in the application.
Can be reacted after Grain refiner material 12 contacts with bond wire 11 generation compound, this compound and the contact-making surface of liquid bond wire 11 are bond wire 11 effective forming core basal planes when solidifying, therefore, Grain refiner material 12 can increase the nucleation rate of bond wire 11, and then the crystal grain of refinement bond wire 11, thus add bonded layer 10 draw high intensity, improve the mechanical performances such as the toughness of bonded layer 10.In this application, Grain refiner material 12 is rare metal.According to actual conditions, titanium boron fining agent and al-ti-b refiner also can be selected as Grain refiner material 12.
Preferably, this Grain refiner material 12 is Titanium.According to actual conditions, staff can select the rare metals such as tantalum, niobium, zirconium, molybdenum, tungsten, vanadium, titanium as Grain refiner material 12.When depositing bond wire 11, staff can by adding above-mentioned Grain refiner material 12, to realize the refinement of crystal grain.The refining effect of above-mentioned Grain refiner material 12 is mainly: bond wire 11 and above-mentioned Grain refiner material 12 react and generate dystectic compound, when the bond wire 11 of liquid state solidifies, those high melting compounds can play the effect increasing the nuclei of crystallization, thus ensure that this bond wire 11 obtains thinner crystal grain; In addition, these compounds all play again the effect that machinery hinders simultaneously, the fine grain formed can be made not easily to grow up, reach the effect of crystal grain thinning further.
Be metallic aluminium below in conjunction with bond wire 11, Grain refiner material 12 is the embodiment of Titanium, analyze the process of the grain refinement of bond wire 11: after Titanium and Al Contact, peritectic reaction generation Titanium Trialuminum can occur, effective forming core basal plane when Titanium Trialuminum is solidified aluminum with the contact-making surface of liquid metallic aluminium, like this, substantially increase the nucleation rate of metallic aluminium, thus make the crystalline structure refinement of metallic aluminium.
In this application, bonding structure also comprises: carrier layer 20, and bonded layer 10 is arranged in carrier layer 20.Preferably, carrier layer 20 comprises: adhesion layer 21 and dielectric layer 22, and adhesion layer 21 is arranged on dielectric layer 22, and bonded layer 10 is arranged on adhesion layer 21.
Preferably, adhesion layer 21 is provided with dislodger 23, and bonded layer 10 is arranged in dislodger 23.The application arranges the position of bonded layer by being defined for, this bonding structure of can purposively arranging and be shaped, and can save valuable noble metal like this.In addition, the application, by being arranged in dislodger 23 by bonded layer 10, can increasing the contact area between bond wire 11 and adhesion layer 21, and then can increase the bonding force between bond wire 11 and adhesion layer 21.
In an execution mode in this application, bonded layer 10 is arranged by bond wire 11 and Grain refiner material 12 layering and forms, and bonding structure comprises multilayer bonded layer 10.First, staff can first deposit one deck bond wire 11, then deposits one deck Grain refiner material 12 on this layer of bond wire 11, so just can form ground floor bonded layer 10; Then, staff can refer to above-mentioned step and on ground floor bonded layer 10, deposits the second layer layer by layer to n-th layer bonded layer 10.Preferably, bonding structure comprises 2 to 10 layers of bonded layer 10.It is more even that this layering method to set up can make bond wire 11 and Grain refiner material 12 distribute.This deposition process makes the layer thickness of the bond wire 11 in bonded layer 10 and Grain refiner material 12 thinner, makes the structure of bonded layer 10 more even, is conducive to generating less crystal grain.
In this application, adhesion layer 21 is formed by plasma enhanced oxide.Preferably, adhesion layer 21 is formed by plasma enhancing silica.After being provided with adhesion layer 21 in the application, the contact force between carrier layer 20 and bonded layer 10 can be strengthened, efficiently avoid the situation occurring occurring between bonded layer 10 and carrier layer 20 to depart from.
In this application, dielectric layer 22 is formed by silicon nitride.
In another execution mode in this application, bonded layer 10 is mixed by bond wire 11 and Grain refiner material 12.The formation method of this bonded layer 10 is: in the process of deposition bond wire 11, passes into Grain refiner material simultaneously, bond wire 11 and Grain refiner material 12 is reacted and forms this bonded layer 10.According to actual conditions, staff can deposit bond wire 11 and Grain refiner material 12 at same position simultaneously, and makes both mixing to form this bonded layer 10.This deposition process can make bond wire 11 fully contact with Grain refiner material 12, and then improves the nucleation rate of bond wire 11.
In addition, present invention also provides a kind of method forming bonding structure, comprising: by bond wire and be used for refinement bond wire crystal grain Grain refiner material combine formed bonded layer.Adopt the bonded layer formed in this way and there is good mechanical strength.
As the one in the application preferred embodiment, the method forming bonded layer comprises: deposition one deck bond wire; Bond wire deposits one deck Grain refiner material.The deposition of above-mentioned bond wire and Grain refiner material can adopt the method for chemical vapour deposition (CVD) or physical vapour deposition (PVD) etc. to implement.
Road as is known in the art, chemical vapour deposition technique is traditional technology preparing film, and its principle is the pioneer's reactant utilizing gaseous state, by atom, intermolecular chemical reaction, make some ingredient breakdown in gaseous precursor, and form film on matrix.Chemical vapour deposition (CVD) comprises aumospheric pressure cvd, plasma auxiliary chemical deposition, Laser-assisted chemical deposition, metallo-organic compound deposition etc.The method of sputtering such as can be adopted to deposit this bond wire and Grain refiner material, thinner and uniform layer thickness can be produced thus.Sputtering is a kind of physical gas phase deposition technology, and it is that the atom described in solid target is clashed into by high energy ion and leaves the physical process that solid enters gas, and the ion in sputter procedure is usually from plasma.The advantage of sputtering to prepare the film of materials with high melting point at a lower temperature, keeps former composition constant, apply widely so obtained in semiconductor device and IC manufacturing in the process preparing alloy and compound film.
According to the situation of reality, also can adopt this bond wire of electrochemical deposition, by the bond wire of electrochemical deposition, there is more smooth, uniform layer thickness.Such as can deposit this bond wire and Grain refiner material by electric plating method, electroplating technology is also called electro-deposition, it is one of main method obtaining the coat of metal at material surface, its principle is under the effect of DC electric field, in electrolyte solution (plating solution), form loop by anode and negative electrode, make metal ion deposition in solution to the process on negative electrode plating piece surface.
In this application, the method also comprises: repeat alternately to deposit bond wire and Grain refiner material.Like this, bond wire and the mutually stacked bonded layer of Grain refiner material can just be formed.
Preferably, the deposit thickness of Grain refiner material is 0.1 to 10nm.This bonded layer can deposit with the thickness (thickness such as between 1nm and 10000nm, the thickness especially between 10nm and 1000nm) preset.The particle size of the inside of bonded layer can be limited by this default layer thickness.When less particulate, a kind of material can have the material behavior of improvement relative to mean state, such as, improve tensile strength and/or larger hardness.Less particulate provides a large amount of nucleus in bonding process, for exceeding the crystal growing at interface.
Preferably, the depositing temperature of Grain refiner material is 5 to 300 degrees Celsius.
As the another preferred embodiment in the application, the method forming bonded layer comprises: in the process of deposition bond wire, passes into Grain refiner material simultaneously, makes bond wire and Grain refiner material reaction form bonded layer.
As can be seen from the above description, the application's the above embodiments achieve following technique effect:
The refinement crystal grain of bond wire, and then the machinery that improve bonded layer is slight, thus easily there is the problem that loosens, come off in the bonded layer that avoids bonding structure.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (17)
1. a bonding structure, is characterized in that, comprising:
Bonded layer, described bonded layer comprises bond wire and Grain refiner material, and described Grain refiner material is used for the crystal grain of bond wire described in refinement.
2. bonding structure according to claim 1, is characterized in that, described bond wire is metallic aluminium.
3. bonding structure according to claim 1, is characterized in that, described Grain refiner material is rare metal.
4. bonding structure according to claim 3, is characterized in that, described Grain refiner material is Titanium.
5. bonding structure according to claim 1, is characterized in that, described bonding structure also comprises:
Carrier layer, described bonded layer is arranged in described carrier layer.
6. bonding structure according to claim 5, is characterized in that, described carrier layer comprises:
Adhesion layer and dielectric layer, described adhesion layer is arranged on described dielectric layer, and described bonded layer is arranged on described adhesion layer.
7. bonding structure according to claim 6, is characterized in that, described adhesion layer is provided with dislodger, and described bonded layer is arranged in described dislodger.
8. bonding structure according to claim 1, is characterized in that, described bonded layer is arranged by described bond wire and described Grain refiner material layering and forms, and described bonding structure comprises bonded layer described in multilayer.
9. bonding structure according to claim 8, is characterized in that, described bonding structure comprises 2 to 10 layers of described bonded layer.
10. bonding structure according to claim 6, is characterized in that, described adhesion layer is formed by plasma enhanced oxide.
11. bonding structures according to claim 6, is characterized in that, described dielectric layer is formed by silicon nitride.
12. bonding structures according to claim 1, is characterized in that, described bonded layer is mixed by described bond wire and described Grain refiner material.
13. 1 kinds of methods forming bonding structure, is characterized in that, comprising:
By bond wire and be used for bond wire described in refinement crystal grain Grain refiner material combine formed bonded layer.
14. methods according to claim 13, is characterized in that, the method forming described bonded layer comprises:
Bond wire described in deposition one deck;
Described bond wire deposits Grain refiner material described in one deck.
15. methods according to claim 14, is characterized in that, described method also comprises:
Repeat alternately to deposit described bond wire and described Grain refiner material.
16. methods according to claim 14, is characterized in that, the deposit thickness of described Grain refiner material is 0.1 to 10nm.
17. methods according to claim 14, is characterized in that, the depositing temperature of described Grain refiner material is 5 to 300 degrees Celsius.
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| CN105097743B (en) | 2019-02-12 |
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