CN105093809B - Enhance the optical adjacent correction method of lithographic process window - Google Patents
Enhance the optical adjacent correction method of lithographic process window Download PDFInfo
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- CN105093809B CN105093809B CN201410218385.9A CN201410218385A CN105093809B CN 105093809 B CN105093809 B CN 105093809B CN 201410218385 A CN201410218385 A CN 201410218385A CN 105093809 B CN105093809 B CN 105093809B
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Abstract
The present invention provides a kind of optical adjacent correction method for enhancing lithographic process window, comprising steps of A. provides original figure to be modified；B. it is inserted into rule-based scattering strip, as raw scattered item；C. it selects isolated scattering strip and is expanded, accurate adjustment is carried out to the expansion rule；D. optical proximity correction is executed；E. it checks whether revised scattering strip develops on wafer to come out, if it is not, entering step F；If so, returning to above-mentioned steps C；F. the figure after optical proximity correction is exported.The present invention can significantly improve lithographic process window, optical proximity correction quality be improved, with better convergence.In addition manual debug time can also be reduced, the exploitation of OPC process menu is accelerated.
Description
Technical field
The present invention relates to the optical proximity correction technical fields in semiconductor fabrication process, in particular it relates to
A kind of scattering strip (scattering bar) Lai Zengqiang lithographic process window (litho process isolated by expansion
Window optical adjacent correction method).
Background technique
With the high speed development of IC design, layout patterns photoetching later deformation and deviation how are reduced, is inhibited
The negative effect of optical proximity effect, and then the yield rate of chip production is improved, key is played to the development of manufacture of microchips
Effect.For this problem, a kind of method that industry generallys use at present is optical proximity correction (Optical Proximity
Correction, OPC), reduce the deviation for exposing litho pattern obtained by changing the shape of original layout figure.
In the prior art, the process of optical proximity correction generally comprises: carrying out optical analog to original layout figure, obtains
Simulate figure；By comparing simulation figure and original layout figure obtained, to wherein location error not in allowed band
Interior pattern is labeled, and is carried out in original layout figure with the pattern of the labeling position using certain calibration principle
Correction, until obtaining the simulation figure for meeting design requirement.
Since the layout style of original layout figure changes with designer, there is diversity, directly to original layout figure
Shape, which carries out optics neighbour correction usually, will obtain a large amount of to be marked and correction pattern, so that correction course be made to spend a large amount of people
Power and time.For this purpose, industry also has the method for proposing that some pairs of calibration principles are improved, and such as: by advance to line segment, line
The component part of the simple patterns such as end, turning sets correction rule, and making calibration principle not only includes some simple bearing calibrations,
It can also include the set of these special correction rules.It, will be corresponding with pattern when occurring similar pattern in original layout
The correction rule is applied in practical correction course, to reduce the time of practical correction course, to improve correction efficiency, saves
About cost.
In order to eliminate the influence of optical proximity effect, the figure and desired obtained light on photomask actually manufactured
Needle drawing shape is not identical, and the figure on photomask have passed through optical proximity correction processing.Furthermore with characteristic size
(Critical Dimension, CD) enters 90nm and more small range, the line width of the figure on mask or even only light wave
Long 1/3 usually also needs to be aided with around exposure figure setting time in addition to above-mentioned necessary optical proximity correction processing
Resolution ratio secondary graphics (Sub-Resolution Assistant Feature, SRAF).These auxiliary figure with low resolution are only
It is set on lay photoetching mask plate, its figure can't be transferred to semiconductor devices after actual exposure, function only as increasing neighbouring
The depth of focus of exposure figure improves the effect of exposure accuracy.
Contacting logic region has more random and complexity a design, such as diagonal (diagonal) or stagger arrangement
(staggered) structure.And scattering strip is all extremely important for OPC convergence (convergence) and lithographic process window
's.But the existing rule based on scattering strip has the limitation for covering various labyrinths.After OPC is completed, leave a large amount of
Hot spot (hotspots) with insufficient lithographic process window.
For this purpose, expanding lithographic process window usually using following two method in the prior art:
1. selecting the lithographic process window for having insufficient by geometrical characteristic (geometrical character)
Then hot spot expands its target size.
2. optimization scattering rule (width/height/distance (the distance between scattering strip and scattering strip or scattering strip and
The distance between target)).
But when semiconductor chip becomes increasing and is increasingly difficult to manufacture, thousands of hot spots can be generated.Manually
Debugging be not final solution.There is an urgent need to a kind of automatic optimization methods for expanding lithographic process window in the industry.
Summary of the invention
A technical problem to be solved by this invention is to provide a kind of optical proximity correction for enhancing lithographic process window
Method can improve optical proximity correction quality, have better convergence.
The optical adjacent that another technical problem to be solved by this invention is to provide a kind of enhancing lithographic process window is repaired
Correction method can reduce manual debug time, accelerate the exploitation of OPC process menu.
The optical adjacent that another technical problem to be solved by this invention is to provide a kind of enhancing lithographic process window is repaired
Correction method can significantly improve lithographic process window.
In order to solve the above technical problems, the present invention provides a kind of optical adjacent correction method for enhancing lithographic process window,
Comprising steps of
A., original figure to be modified is provided；
B. it is inserted into rule-based scattering strip, as raw scattered item；
C. it selects isolated scattering strip and is expanded, accurate adjustment is carried out to the expansion rule；
D. optical proximity correction is executed；
E. it checks whether the revised scattering strip develops on wafer to come out, if it is not, entering step F；If so, returning
Return above-mentioned steps C；And
F. the figure after optical proximity correction is exported.
Optionally, above-mentioned steps C includes:
The edge to be adjusted of the isolated scattering strip is searched at each edge for checking the scattering strip；
The edge to be adjusted is extended to the outside into a numerical value c.
Optionally, the mode at the edge to be adjusted of the isolated scattering strip is searched for are as follows:
Judge whether the width at edge described in each is less than or equal to a numerical value a and whether distance is more than or equal to a numerical value
b；If so, determining that the edge is edge to be adjusted.
Optionally, described numerical value a, b, c are adjustable parameter in the expansion rule.
Optionally, the expansion rule can be classified as some groups, including classify according to distance classification, according to length,
Classify according to width and according to area classifying.
Compared with prior art, the invention has the following advantages that
The present invention expands rule to isolated scattering strip setting one, by expanding isolated scattering strip, improves scattering strip
Coverage area achievees the purpose that enhance lithographic process window.
The present invention is the experiment proved that can significantly enhance lithographic process window.In addition, the present invention can not only improve light
Neighbouring amendment quality is learned, with better convergence, and manual debug time can be reduced, accelerate OPC process menu
Exploitation.
Detailed description of the invention
The above and other features of the present invention, property and advantage will pass through retouching with reference to the accompanying drawings and examples
It states and becomes readily apparent from, in which:
Fig. 1 is a kind of flow chart of traditional optical adjacent correction method in the prior art；
Fig. 2 is the flow chart of the optical adjacent correction method of the enhancing lithographic process window of one embodiment of the invention；
Fig. 3-1 is raw scattered in the optical adjacent correction method of the enhancing lithographic process window of one embodiment of the invention
The contrast schematic diagram of item and scattering strip adjusted；
Fig. 3-2 is raw scattered in the optical adjacent correction method of the enhancing lithographic process window of Fig. 3-1 illustrated embodiment
Item makes the schematic diagram of the amount (PVband) of feature size variations because of technique change；
Fig. 3-3 is adjusted in the optical adjacent correction method of the enhancing lithographic process window of Fig. 3-1 illustrated embodiment
Scattering strip makes the schematic diagram of the amount (PVband) of feature size variations because of technique change；
Fig. 4-1 is original in the optical adjacent correction method of the enhancing lithographic process window of another embodiment of the present invention dissipates
Penetrate the contrast schematic diagram of item Yu scattering strip adjusted；
Fig. 4-2 is raw scattered in the optical adjacent correction method of the enhancing lithographic process window of Fig. 4-1 illustrated embodiment
Item makes the schematic diagram of the amount (PVband) of feature size variations because of technique change；
Fig. 4-3 is adjusted in the optical adjacent correction method of the enhancing lithographic process window of Fig. 4-1 illustrated embodiment
Scattering strip makes the schematic diagram of the amount (PVband) of feature size variations because of technique change.
Specific embodiment
In order to be contrasted, before the optical adjacent correction method for describing enhancing lithographic process window of the invention, first
Describe how traditional optical adjacent correction method executes in the prior art before this.Fig. 1 is in the prior art one
The flow chart of the traditional optical adjacent correction method of kind.As shown in Figure 1, the process comprising steps of
Step S101 is executed, original figure to be modified is provided；
Step S102 is executed, rule-based scattering strip is inserted into, as raw scattered item；
Step S103 is executed, optical proximity correction is executed；
Step S104 is executed, checks whether scattering strip develops on wafer and comes out, if it is not, S105 is entered step, if so,
Return step S102；
Step S105 is executed, the figure after optical proximity correction is exported.
The invention will be further described with attached drawing combined with specific embodiments below, elaborates in the following description more
Details to facilitate a thorough understanding of the present invention, still the present invention obviously can be come with a variety of other ways different from this description it is real
It applies, those skilled in the art can make similar popularization according to practical situations without violating the connotation of the present invention, drill
It unravels silk, therefore should not be limited the scope of the invention with the content of this specific embodiment.
Fig. 2 is the flow chart of the optical adjacent correction method of the enhancing lithographic process window of one embodiment of the invention.Such as
Shown in Fig. 2, which may include:
Step S201 is executed, original figure to be modified is provided；
Step S202 is executed, rule-based scattering strip is inserted into, as raw scattered item；
Step S203 is executed, isolated scattering strip is selected and is expanded, to expansion rule (sizing up
Rule) accurate adjustment (fine tune) is carried out；
Step S204 is executed, optical proximity correction is executed；
Step S205 is executed, checks whether revised scattering strip develops on wafer and comes out, if it is not, entering step
S206；If so, returning to above-mentioned steps S203, continue to carry out accurate adjustment to expansion rule；And
Step S206 is executed, the figure after optical proximity correction is exported.
In the present embodiment, above-mentioned steps S203 may include:
The each edge for checking scattering strip, searches for the edge to be adjusted of isolated scattering strip；
Edge to be adjusted is extended to the outside into a numerical value c, improves the coverage area (coverage) of scattering strip.
Wherein, the mode at the edge to be adjusted of the isolated scattering strip of above-mentioned search is specifically as follows:
Judge whether the width at each edge is less than or equal to a numerical value a and whether distance is more than or equal to a numerical value b；If
It is, it is determined that edge is edge to be adjusted.
Above-mentioned numerical value a, b, c are to expand adjustable (modifiable) parameter in rule.Above-mentioned expansion rule energy quilt
Some groups are classified as, including are classified according to distance (space) classification, according to length (length), according to width (width) point
Class and according to area (area) classify.
In the present invention, the expansion process of isolated scattering strip, which can be reduced, makes feature size variations because of technique change
It measures (PVband), it means that the improvement to process window.Wherein, PVband numerical value is bigger, it is meant that process window is smaller；And
PVband numerical value is smaller, then means that process window is bigger.
Fig. 3-1 is raw scattered in the optical adjacent correction method of the enhancing lithographic process window of one embodiment of the invention
The contrast schematic diagram of item and scattering strip adjusted.Fig. 3-2 is the optics of the enhancing lithographic process window of Fig. 3-1 illustrated embodiment
Original scattering strip makes the schematic diagram of the amount (PVband) of feature size variations because of technique change in adjacent correction method.Fig. 3-3
For scattering strip adjusted in the optical adjacent correction method for enhancing lithographic process window of Fig. 3-1 illustrated embodiment because technique becomes
Change and make the schematic diagram of the amount (PVband) of feature size variations.In Fig. 3-2, the PVband numerical value of raw scattered item is 3~
4.5；And in Fig. 3-3, the PVband numerical value of scattering strip adjusted is 2.5~4, embodies and changes to lithographic process window
It is kind.
Fig. 4-1 is original in the optical adjacent correction method of the enhancing lithographic process window of another embodiment of the present invention dissipates
Penetrate the contrast schematic diagram of item Yu scattering strip adjusted.Fig. 4-2 is the light of the enhancing lithographic process window of Fig. 4-1 illustrated embodiment
Learning original scattering strip in adjacent correction method makes the schematic diagram of amount (PVband) of feature size variations because of technique change.Fig. 4-
3 be scattering strip adjusted in the optical adjacent correction method for enhancing lithographic process window of Fig. 4-1 illustrated embodiment because of technique
Change and make the schematic diagram of the amount (PVband) of feature size variations.In Fig. 4-2, the PVband numerical value of raw scattered item is
3.25~4；And in Fig. 4-3, the PVband numerical value of scattering strip adjusted is 2~3.25, is embodied to lithographic process window
Improvement.
The present invention expands rule to isolated scattering strip setting one, by expanding isolated scattering strip, improves scattering strip
Coverage area achievees the purpose that enhance lithographic process window.
The present invention is the experiment proved that can significantly enhance lithographic process window.In addition, the present invention can not only improve light
Neighbouring amendment quality is learned, with better convergence, and manual debug time can be reduced, accelerate OPC process menu
Exploitation.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this field skill
Art personnel without departing from the spirit and scope of the present invention, can make possible variation and modification.Therefore, it is all without departing from
The content of technical solution of the present invention, according to the technical essence of the invention any modification to the above embodiments, equivalent variations
And modification, it each falls within the protection scope that the claims in the present invention are defined.
Claims (3)
1. a kind of optical adjacent correction method for enhancing lithographic process window, comprising steps of
A., original figure to be modified is provided；
B. it is inserted into rule-based scattering strip, as raw scattered item；
C. it selects the isolated scattering strip and is expanded, accurate adjustment is carried out to the expansion rule；
D. optical proximity correction is executed；
E. it checks whether the revised scattering strip develops on wafer to come out, if it is not, entering step F；If so, on returning
State step C；And
F. the figure after optical proximity correction is exported；
Wherein, above-mentioned steps C includes:
The edge to be adjusted of the isolated scattering strip is searched at each edge for checking the scattering strip；
The edge to be adjusted is extended to the outside into a numerical value c；
Wherein, the mode at the edge to be adjusted of the isolated scattering strip is searched for are as follows:
Judge whether the width at edge described in each is less than or equal to a numerical value a and whether distance is more than or equal to a numerical value b；If
It is, it is determined that the edge is edge to be adjusted.
2. optical adjacent correction method according to claim 1, which is characterized in that described numerical value a, b, c are the expansion
Adjustable parameter in big rule.
3. optical adjacent correction method according to claim 2, which is characterized in that the expansion rule can be classified as one
A little groups, including classify and according to distance classification, according to length classification, foundation width according to area classifying.
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Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109709761B (en) * | 2017-10-25 | 2022-06-03 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN112241102A (en) * | 2019-07-19 | 2021-01-19 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction, photomask manufacturing and imaging method |
| CN110716387B (en) * | 2019-11-26 | 2022-10-21 | 上海华力集成电路制造有限公司 | Scattering strip adding method |
| CN113050367A (en) * | 2019-12-27 | 2021-06-29 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity effect correction method and system, mask and preparation method thereof |
| CN113031388A (en) * | 2021-02-26 | 2021-06-25 | 广东省大湾区集成电路与系统应用研究院 | Embedding method of scattering bar in optical proximity effect correction |
| CN115877650B (en) * | 2023-01-30 | 2023-05-30 | 合肥新晶集成电路有限公司 | Method for adding scattering bars and method for preparing mask |
| CN117111400B (en) * | 2023-10-25 | 2024-02-20 | 合肥晶合集成电路股份有限公司 | Optical proximity correction method and system |
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| CN101246306A (en) * | 2007-02-12 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity amending method |
| CN101750876A (en) * | 2008-12-17 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN101788759A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Method for correcting auxiliary figure with low resolution |
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| US7339272B2 (en) * | 2004-06-14 | 2008-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with scattering bars adjacent conductive lines |
| JP5050365B2 (en) * | 2006-02-23 | 2012-10-17 | 富士通セミコンダクター株式会社 | Photomask manufacturing method |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246306A (en) * | 2007-02-12 | 2008-08-20 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity amending method |
| CN101750876A (en) * | 2008-12-17 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | Optical proximity correction method |
| CN101788759A (en) * | 2009-01-23 | 2010-07-28 | 中芯国际集成电路制造(上海)有限公司 | Method for correcting auxiliary figure with low resolution |
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