CN107422613B - The integration method of photoetching process hot spot - Google Patents
The integration method of photoetching process hot spot Download PDFInfo
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- CN107422613B CN107422613B CN201710757929.2A CN201710757929A CN107422613B CN 107422613 B CN107422613 B CN 107422613B CN 201710757929 A CN201710757929 A CN 201710757929A CN 107422613 B CN107422613 B CN 107422613B
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- hot spot
- photoetching process
- shape library
- integration method
- process hot
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
- G06F2119/18—Manufacturability analysis or optimisation for manufacturability
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Evolutionary Computation (AREA)
- Geometry (AREA)
- General Engineering & Computer Science (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The present invention provides a kind of integration method of photoetching process hot spot, comprising: provides the shape library with multiple photoetching process hot spots；Centered on the photoetching process hot spot, the partial region that each photoetching process hot spot corresponds to figure is intercepted, forms primary hot spot shape library；Integration rules are defined, identical figure or close figure in the primary hot spot shape library are removed, the primary hot spot shape library is integrated into unpressed intermediate hot spot shape library；Reduced rule is defined, setting constraint condition sorts out similar fitgures, by the advanced hot spot shape library of the intermediate hot spot shape library boil down to.In the present invention, the advanced hot spot figure storehouse matching precision of the compressed version finally generated does not decline, hot spot exhaustive.In addition, the present invention can will count the hot spot in terms of necessarily by integration compression in hot spot shape library, shape library of the hot spot quantity within thousand grades is ultimately generated, hot spot quantity is reduced, convenient for further effective management of hot spot.
Description
Technical field
The present invention relates to technical field of lithography more particularly to a kind of integration methods of photoetching process hot spot.
Background technique
Domain photoetching process Hot spots detection is one in manufacturability design (Design For Manufacture, DFM)
Item important technology.Usually using optical model, photoresist model, optical proximity correction program and photoetching process Hot spots detection rule
Group suite carries out the friendly row inspection of photoetching (Lithography Friendly Check, LFC) to design configuration, generates technique
Hot spot label and silicon wafer simulate figure.Wherein, it would be desirable to optical proximity correction first be carried out to design configuration, then carry out work
Graphic simulation in skill window ranges predicts the simulation feature size within the scope of process window, and carries out regular inspection to this, looks for
To the design position to break the rules.
But with the propulsion of technology node, the design layout data amount of integrated circuit becomes increasing, photoetching process heat
Point quantity is also more and more, and the review time becomes more and more longer.For accurate and quick positioning photoetching process hot spot, designer
Producer is needed to provide layout patterns hot spot library (Pattern Matching Database, PMDB).Based on Image Hotpoint library
The mode of Graphic Pattern Matching be that current industry generally acknowledges most fast domain hotspot lookup mode.For producer, one kind is needed
Effective domain hot spot collection method process.This method flow can sort out domain process heat point of the number in terms of necessarily
Compression.
Summary of the invention
The object of the present invention is to provide a kind of integration method of photoetching process hot spot, be conducive to carry out design layout
It checks.
To achieve the goals above, the present invention provides a kind of integration method of photoetching process hot spot, comprising:
The shape library for having multiple photoetching process hot spots is provided；
Centered on the photoetching process hot spot, the partial region that each photoetching process hot spot corresponds to figure is intercepted,
Form primary hot spot shape library；
Integration rules are defined, identical figure or close figure in the primary hot spot shape library are removed, by the primary
Hot spot shape library is integrated into unpressed intermediate hot spot shape library；
Reduced rule is defined, setting constraint condition sorts out similar fitgures, and the intermediate hot spot shape library boil down to is advanced
Hot spot shape library.
Optionally, it intercepts each photoetching process hot spot and corresponds to the identical partial region of feature size.
Optionally, it centered on the photoetching process hot spot, intercepts each photoetching process hot spot and is corresponding to figure just
Square region.
Optionally, the side length of the square is 0.4 micron~0.8 micron.
Optionally, the identical figure is two figures that can be completely coincident after rotation and/or mirror image.
Optionally, the angle of the rotation includes 90 °, 180 °, 270 °.
Optionally, the close figure is two figures that can determine that after filling small angular zone as identical figure.
Optionally, width of the width of the small angular zone less than 2~3 storage units.
Optionally, the similar fitgures are by can determine that after whole figure movement or the movement of part side as identical figure
Two figures.
Compared with prior art, the integration method of photoetching process hot spot of the invention has the advantages that
In the present invention, corresponding primary hot spot shape library is established in large batch of test product, by setting centainly
Primary hot spot shape library is integrated into unpressed intermediate hot spot shape library, finally according to the actual characteristic of hot spot by integration rules
Hot spot library reduced rule is set, the advanced hot spot shape library of compressed version, the advanced hot spot shape library of the compressed version finally generated are generated
Matching precision does not decline, hot spot exhaustive.In addition, the present invention can will be counted in hot spot shape library hot spots in terms of necessarily pass through it is whole
Combined pressure contracting, ultimately generates shape library of the hot spot quantity within thousand grades, hot spot quantity is reduced, convenient for further effective pipe of hot spot
Reason.
Detailed description of the invention
Fig. 1 is the flow chart of the integration method of photoetching process hot spot in one embodiment of the invention；
Fig. 2 is the schematic diagram of the partial region intercepted in one embodiment of the invention；
Fig. 3 is the judgement schematic diagram of identical figure in one embodiment of the invention；
Fig. 4 is the judgement schematic diagram of close figure in one embodiment of the invention；
Fig. 5 is the schematic diagram that figure moves integrally reduced rule in one embodiment of the invention；
Fig. 6 is the schematic diagram of the unilateral mobile reduced rule of figure in one embodiment of the invention；
Fig. 7 is the process schematic of hot spot integration in one embodiment of the invention.
Specific embodiment
It is described in more detail below in conjunction with integration method of the schematic diagram to photoetching process hot spot of the invention, wherein
Illustrating the preferred embodiment of the present invention, it should be appreciated that those skilled in the art can modify invention described herein, and still
So realize advantageous effects of the invention.Therefore, following description should be understood as the widely known of those skilled in the art,
And it is not intended as limitation of the present invention.
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Core of the invention thought is, provides a kind of integration method of photoetching process hot spot, comprising: provides with multiple
The shape library of photoetching process hot spot；Centered on the photoetching process hot spot, each photoetching process hot spot corresponding diagram is intercepted
The partial region of shape forms primary hot spot shape library；Integration rules are defined, identical or phase in the primary hot spot shape library is removed
The primary hot spot shape library is integrated into unpressed intermediate hot spot shape library by close figure；Reduced rule is defined, setting is about
Beam condition sorts out similar fitgures, by the advanced hot spot shape library of the intermediate hot spot shape library boil down to.It is final to produce in the present invention
The advanced hot spot figure storehouse matching precision of raw compressed version does not decline, hot spot exhaustive.In addition, the present invention can be by hot spot shape library
Hot spot of the middle number in terms of necessarily ultimately generates shape library of the hot spot quantity within thousand grades by integration compression, reduces hot spot number
Amount, convenient for further effective management of hot spot.
It is specifically described below in conjunction with integration method of the attached drawing to photoetching process hot spot of the present invention.With reference to institute in Fig. 1
Show, the integration method of photoetching process hot spot of the invention includes the following steps:
Step S1 is executed, the shape library with multiple photoetching process hot spots is provided.
Step S2 is executed, centered on the photoetching process hot spot, each photoetching process hot spot is intercepted and corresponds to figure
Partial region, form primary hot spot shape library.Refering to what is shown in Fig. 2, intercepting each institute centered on the photoetching process hot spot
State the square area that photoetching process hot spot corresponds to figure, wherein the side length of the square is 2r, such as side length is 0.4 micro-
Rice~0.8 micron.In the present invention, it intercepts each photoetching process hot spot and corresponds to the identical partial region of feature size, i.e.,
The side length for intercepting the square area that each photoetching process hot spot corresponds to figure is equal.
Step S3 is executed, integration rules are defined, removes identical figure or close figure in the primary hot spot shape library,
The primary hot spot shape library is integrated into unpressed intermediate hot spot shape library.
In the present invention, the identical figure is two figures that can be completely coincident after rotation and/or mirror image.The rotation
The angle turned includes 90 °, 180 ° or 270 °.Refering to what is shown in Fig. 3, R90 ° generated after respectively illustrating R0 ° of image rotation,
R180 °, R270 ° of image, MYR0 ° of Y-axis mirror image and mirror image are put english raw MYR90 °, MYR180 °, the MYR270 ° of image of changing the line of production, that is, are passed through
The corresponding figure of two photoetching process hot spots that can be overlapped after rotation or mirror image can be considered same photoetching process hot spot figure completely.
And the close figure in the present invention is two figures that can determine that after filling small angular zone as identical figure.Ginseng
It examines shown in Fig. 4, left figure and right figure are two photoetching process hot spot figures, only difference is that lacking one at 401 in right figure
Small angular zone, the width of less than 2~3 storage units (Cell) of width of this small angular zone.Due to the small angular zone of missing
Missing width it is very small, after optical patterning, can ignore completely its bring influence, so such two hot spot figures
It whole can be considered as extremely similar figure completely.Further, close figure can be completely coincident after rotation and/or mirror image
Two figures, so that close figure can be integrated into a figure.
Step S4 is executed, reduced rule is defined, setting constraint condition sorts out similar fitgures, by the intermediate hot spot figure
The advanced hot spot shape library of library boil down to.In the present invention, the similar fitgures are by after whole figure movement or the movement of part side
It can determine that two figures for identical figure.Refering to what is shown in Fig. 5, if hot spot figure 501 is moved integrally by vector a generates void
Line graph 502, it is possible to determine that figure 501,502 is two similar hot spots, can do further compression.In addition, with reference to Fig. 6 institute
Show, figure 601 can be b by suitably moving unilateral distance, and c obtains figure as figure 602 or 603 also and can determine that be similar
Figure can do further compression.
It is illustrated by taking Fig. 7 as an example, firstly, the shape library with photoetching process hot spot is provided, with the photoetching process heat
Centered on point, the partial region that each photoetching process hot spot corresponds to figure is intercepted, forms primary hot spot shape library, including figure
Shape 701,702,703.
Then, integration rules are defined, primary hot spot shape library composed by figure 701,702 and 703 are carried out further
Integration.Wherein, figure 701,703 differences are that 703 lack a small angle, and such small angle corresponds to actual exposure process
It can ignore completely, therefore described 701,703 can be determined that as close figure, figure 701,703 corresponds to hot spot figure 704,
702 to remain unchanged be 705, and therefore, figure 704,705 is that group becomes the intermediate hot spot shape library after integration.
Further, reduced rule is defined, setting constraint condition sorts out similar fitgures, by the intermediate hot spot shape library
The advanced hot spot shape library of boil down to.Wherein, the difference of figure 704 and 705 is that 704 right figure width is d, and 705 be e,
Remaining part point is all the same, and the change width range for such as setting right figure shape can determine that 704,705 then as similar fitgures, will scheme as d~e
Shape 704,705 forms 706 by compression, forms advanced hot spot shape library, and the range of 706 right graphic width is d~e.
In conclusion the present invention provides the integration method of photoetching process hot spot, the foundation pair in large batch of test product
Primary hot spot shape library is integrated into unpressed middle rank by setting certain integration rules by the primary hot spot shape library answered
Hot spot shape library finally sets hot spot library reduced rule according to the actual characteristic of hot spot, generates the advanced hot spot figure of compressed version
Library, the advanced hot spot figure storehouse matching precision of the compressed version finally generated do not decline, hot spot exhaustive.In addition, the present invention can incite somebody to action
The hot spot in terms of necessarily is counted in hot spot shape library by integration compression, ultimately generates shape library of the hot spot quantity within thousand grades,
Hot spot quantity is reduced, convenient for further effective management of hot spot.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (9)
1. a kind of integration method of photoetching process hot spot characterized by comprising
The shape library for having multiple photoetching process hot spots is provided；
Centered on the photoetching process hot spot, the partial region that each photoetching process hot spot corresponds to figure is intercepted, is formed
Primary hot spot shape library；
Integration rules are defined, identical figure or close figure in the primary hot spot shape library are removed, by the primary hot spot
Shape library is integrated into unpressed intermediate hot spot shape library；
Reduced rule is defined, constraint condition is set and sorts out similar fitgures, the intermediate hot spot shape library boil down to is advanced
Hot spot shape library.
2. the integration method of photoetching process hot spot as described in claim 1, which is characterized in that each photoetching process of interception
Hot spot corresponds to the identical partial region of feature size.
3. the integration method of photoetching process hot spot as described in claim 1, which is characterized in that be with the photoetching process hot spot
Center intercepts the square area that each photoetching process hot spot corresponds to figure.
4. the integration method of photoetching process hot spot as claimed in claim 3, which is characterized in that the side length of the square is
0.4 micron~0.8 micron.
5. the integration method of photoetching process hot spot as described in claim 1, which is characterized in that the identical figure is through overwinding
Turn and/or mirror image after two figures being completely coincident.
6. the integration method of photoetching process hot spot as claimed in claim 5, which is characterized in that the angle of the rotation be 90 °,
180 ° or 270 °.
7. the integration method of photoetching process hot spot as claimed in claim 5, which is characterized in that the close figure is that filling is small
It can determine that two figures for identical figure after angular zone.
8. the integration method of photoetching process hot spot as claimed in claim 7, which is characterized in that the width of the small angular zone is small
In the width of 2~3 storage units.
9. the integration method of photoetching process hot spot as claimed in claim 5, which is characterized in that the similar fitgures are by whole
It can determine that two figures for identical figure after volume graphic movement or part side are mobile.
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| CN108873604B (en) * | 2018-07-20 | 2021-05-25 | 上海华力微电子有限公司 | Method for inspecting hot spots of photoetching process |
| CN114089607B (en) * | 2021-11-29 | 2023-10-10 | 上海华力微电子有限公司 | Method for deep acceleration of hot spot inspection of integrated circuit layout photoetching process |
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| US8914340B2 (en) * | 2008-02-06 | 2014-12-16 | International Business Machines Corporation | Apparatus, system, and method for relocating storage pool hot spots |
| EP2579258A1 (en) * | 2011-10-04 | 2013-04-10 | Thomson Licensing | Method of automatic management of a collection of images and corresponding device |
| CN102346800B (en) * | 2011-11-08 | 2013-06-26 | 中国科学院微电子研究所 | Method and device for accelerating design rule check |
| US8984450B2 (en) * | 2013-03-14 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for extracting systematic defects |
| CN104375377B (en) * | 2013-08-16 | 2018-08-21 | 上海华虹宏力半导体制造有限公司 | A method of reducing layout data size |
| CN104700435B (en) * | 2013-12-09 | 2017-12-05 | 上海华虹宏力半导体制造有限公司 | A kind of method using OASIS graphic array compressing domain data |
| TWI571701B (en) * | 2015-04-30 | 2017-02-21 | 力晶科技股份有限公司 | Method of detecting photolithographic hotspots |
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