CN105093020A - Method for evaluating single event effect resisting ability of SiP device - Google Patents
Method for evaluating single event effect resisting ability of SiP device Download PDFInfo
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- CN105093020A CN105093020A CN201510484539.3A CN201510484539A CN105093020A CN 105093020 A CN105093020 A CN 105093020A CN 201510484539 A CN201510484539 A CN 201510484539A CN 105093020 A CN105093020 A CN 105093020A
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Abstract
The invention discloses a method for evaluating a single event effect resisting ability of an SiP device, which comprises the steps of carrying out cap opening protection on SiP; acquiring information of SiP internal chips, and determining whether the radiation resisting performance of SiP internal devices is recorded in a radiation database or not; regarding the whole SiP to reach requirements of a single event resisting index if the radiation database has radiation resisting performance data of the corresponding SiP chips and all of the SiP chips can reach the requirements of the single event resisting index; judging whether the SiP device has chips which are located at stacked packaging or not if a certain SiP internal chip cannot reach the single event resisting index or the radiation database does not have corresponding radiation performance test data of the SiP chip; judging whether the vertical adjacent chips which are located at stacked packaging are identical or not; independently packaging the chip which cannot be radiated below stacked packaging into a device; and carrying out a single event effect test on the chips which are packaged into devices, the chips which are stacked but identical and the chips which are not stacked, acquiring test data, and judging whether the single event resisting index is met or not. The method disclosed by the invention solves a problem that evaluation for the single event effect resisting ability of the SiP device is inaccurate.
Description
Technical field
The present invention relates to a kind of SiP device anti-single particle effect capability appraisal procedure, belong to single particle effect technical field of measurement and test.
Background technology
SIP device adopts system Integration in Package, by multiple, there is the active electronic device of difference in functionality and selectable passive element, and other devices such as such as MEMS or optical device etc., be assembled into the single standard packaging part that several functions can be provided, form a system or subsystem, and the microminiaturized circuitry series products that keeps in repair after breaking down, can be carried out.
Current existing single particle experiment method, as all given the single particle experiment method of monolithic integrated optical circuit in QJ10005 " aerospace device heavy ion single particle experiment guide ", ASTMF1192 " heavy ion causes semiconductor devices single particle phenomenon to measure guide ", but do not provide the single particle experiment method of SiP device.The device worked in systems in which, owing to needing transmission and the exchange of carrying out data during its work, therefore signal voltage is interrupted, and being equivalent to Radiation bias is be interrupted, thus, the single-particle radiosusceptibility of the device worked in systems in which and the situation of individual devices quiescent biasing different.Based on this, the capability of resistance to radiation of SiP device is assessed, " wooden pail effect " of radiation resisting capability of device can not be adopted simply carry out.When having ready conditions, because carrying out single particle experiment to the integrated circuit of its inside in SiP device system.As laminated chips be different process, design time, just consider by individual chips single particle experiment assessment mode to its SiP device inside single particle effect assess.
At present in this area, also not about the method for SIP device package test.
Summary of the invention
Technology of the present invention is dealt with problems and is: in order to overcome the deficiencies in the prior art, proposes a kind of SiP device anti-single particle effect capability appraisal procedure, solves the inaccurate problem of assessment SiP device anti-single particle effect capability.
Technical solution of the present invention is:
A kind of SiP device anti-single particle effect capability appraisal procedure, comprises step as follows:
(1) cap process is opened to SiP;
(2) obtain SiP inside chip information, and determine whether the radiation resistance of SiP internal components is recorded in radiation data storehouse; Described inside chip comprises power MOSFET, bipolar operation amplifier, static memory, microprocessor;
(3) if there are the radiation resistance data of corresponding SIP chip in radiation data storehouse, and all SIP chips all can reach anti-single particle index request, and described radioresistance index request is as follows: locking single particle LET threshold value is greater than 75MeV.cm
2/ mg, single-particle inversion threshold value and single event function interrupt threshold value are greater than 37MeV.cm
2/ mg, then think that whole SiP reaches anti-single particle index request, and enter step (7); If certain SIP inside chip fails to reach in anti-single particle index or radiation data storehouse do not have the corresponding radiance test figure of certain SIP chip, enter step (4);
(4) judge in SiP device, whether there is the chip being in stacked package, if having, enter step (5), otherwise enter step (6);
(5) judge that whether the neighbouring chip being in stacked package is identical, if difference, enter step (6), if identical, enter step (7);
(6) chip that cannot will be radiated below stacked package, is packaged into device separately;
(7) to be packaged into the chip of device and step (5) in step (6) but in have in stacked identical chip and step (4) and carry out single particle effect test without stacked chip, obtain test figure, and judge whether to meet radioresistance index request;
Judge whether that the concrete mode meeting radioresistance index request is as follows:
(7a) judge whether chip locking single particle LET threshold value is greater than 75MeV.cm
2/ mg, if be greater than, enters step (7a), otherwise enters step (9);
(7b) judge whether chip single-particle inversion threshold value and single event function interrupt threshold value are greater than 37MeV.cm
2/ mg, if be greater than, enters step (9), otherwise enters step (8);
(8) single particle effect test is carried out to whole SiP, all chips are assembled, and EDAC reinforcing has been carried out to the SiP after assembling, then single particle effect test is carried out to whole SiP, and judge whether whole SIP meets radioresistance index request.
(9) terminate.
The present invention compared with prior art tool has the following advantages:
(1) the invention provides single particle effect testing process and the method for testing of complete set encapsulation SIP device, accurately and efficiently can realize the single particle effect test of SIP device, the present invention has taken into full account SIP device lamination process and multi-chip complexity, be not as prior art, all chips in SIP device all opened and carries out single test.
(2) the present invention is according to the single particle effect test figure of each chip of assembling SiP device, judge whether the single particle effect test needing to carry out whole SiP, when saving line machine, avoid revision test, can greatly improve design cost and work efficiency simultaneously.
(3) The present invention gives the anti-single particle effect capability appraisal procedure according to SiP device, can the anti-single particle effect capability of accurate evaluation SiP device, can operate strong.
Accompanying drawing explanation
Fig. 1 is the inventive method process flow diagram.
Embodiment
Below in conjunction with accompanying drawing, specific works principle of the present invention is further explained.
As shown in Figure 1, a kind of SiP device anti-single particle effect capability of the present invention appraisal procedure, comprises step as follows:
(1) cap process is opened to SiP; The cap method of opening in GJB548 method is adopted to open cap process to SiP or adopt acid corrosion means to remove chip outer package.
(2) obtain SiP inside chip information, and determine whether the radiation resistance of SiP internal components is recorded in radiation data storehouse; Described inside chip comprises power MOSFET, bipolar operation amplifier, static memory, microprocessor;
(3) if there are the radiation resistance data of corresponding SIP chip in radiation data storehouse, and all SIP chips all can reach anti-single particle index request, and described radioresistance index request is as follows: locking single particle LET threshold value is greater than 75MeV.cm
2/ mg, single-particle inversion threshold value and single event function interrupt threshold value are greater than 37MeV.cm
2/ mg, then think that whole SiP reaches anti-single particle index request, and enter step (7); If certain SIP inside chip fails to reach in anti-single particle index or radiation data storehouse do not have the corresponding radiance test figure of certain SIP chip, enter step (4);
(4) judge in SiP device, whether there is the chip being in stacked package, if having, enter step (5), otherwise enter step (6);
(5) judge that whether the neighbouring chip being in stacked package is identical, if difference, enter step (6), if identical, enter step (7);
(6) chip that cannot will be radiated below stacked package, is packaged into device separately;
(7) to be packaged into the chip of device and step (5) in step (6) but in have in stacked identical chip and step (4) and carry out single particle effect test without stacked chip, obtain test figure, and judge whether to meet radioresistance index request;
Judge whether that the concrete mode meeting radioresistance index request is as follows:
(7a) judge whether chip locking single particle LET threshold value is greater than 75MeV.cm
2/ mg, if be greater than, enters step (7a), otherwise enters step (9);
(7b) judge whether chip single-particle inversion threshold value and single event function interrupt threshold value are greater than 37MeV.cm
2/ mg, if be greater than, enters step (9), otherwise enters step (8);
The specific implementation of step (7) single particle effect experiment is as follows:
(71) can multilevel iudge heavy ion test bundle spot size cover whole device, if can, direct single particle effect test is carried out to SiP device, obtain test figure, judge whether to meet anti-single particle index; If can not, enter step (72);
(73) first to cover anti-single particle ability lower or do not have the chip of test figure for test bundle spot, carries out single particle effect test, then covered by test bundle spot and tested the chip be not covered to, revision test last time.
The method step carrying out single particle effect test in step (71) and (72) is as follows:
(711) utilize heavy ion accelerator to carry out strong irradiation to the chip being packaged into separately device, irradiation intensity increases gradually, and the heavy ion carrying out locking single particle experiment employing is Bi, and the heavy ion carrying out single-particle inversion experiment employing is Ge;
(712) during carrying out single particle effect, according to the function that chip realizes, multichannel same instructions information is sent to chip, and judge whether multichannel instruction performs correctly according to chip output, if whether chip output expects identical with chip and whether multichannel condition execution instruction is consistent, during for judging locking single particle and single-particle inversion occur, chip operation situation.
In step (71), bundle spot area is generally 2cm*2cm.
(8) single particle effect test is carried out to whole SiP, all chips are assembled, and EDAC reinforcing has been carried out to the SiP after assembling, then single particle effect test is carried out to whole SiP, and judge whether whole SIP meets radioresistance index request.
(9) terminate.
With a specific embodiment, principle of work of the present invention is described below.
Embodiment-SiP device anti-single particle effect capability assessment
1) inside chip anti-single particle capability analysis
SiP device X, 4 kinds of chips such as sram chip A, Spacewire controller B, multiprotocol controller C, processor D of inside chip SiP device inside did not all carry out single particle effect test, there is no single particle effect test figure, therefore need to need to carry out single particle effect test respectively to four kinds of chips to before SiP device assembling.
2) single particle effect test is carried out to four sections of chips.Test findings is as shown in table 1
The single-particle inversion test figure of four sections of devices in table 1SIP device X
The Bi ion locking single particle test figure of four sections of devices in table 2SIP device X
3) as shown in Table 2, in SiP all can not there is locking single particle effect in four chips, and the locking single particle threshold value of the SiP therefore after assembling is greater than 99MeV.cm
2/ mg.In four kinds of chips, the Single event upset effecf of sram chip A is more responsive, and turn threshold is lower, cannot reach the anti-single particle effect index request of whole SiP.Therefore single particle effect test is carried out to whole SiP.
3) carried out EDAC reinforcing to the SiP after assembling, carry out single particle effect test to whole SiP, test figure is as shown in table 3
Table 3 whole SiP single particle effect test findings
As can be seen from Table 3, the SiP after assembling carries out single particle experiment, and the anti-single particle overturn ability of whole device increases, and can provide the assessment result of the anti-single particle effect capability of whole SiP device according to this test findings.
The undocumented part of the present invention belongs to the common practise of this area.
Claims (5)
1. a SiP device anti-single particle effect capability appraisal procedure, is characterized in that step is as follows:
(1) cap process is opened to SiP;
(2) obtain SiP inside chip information, and determine whether the radiation resistance of SiP internal components is recorded in radiation data storehouse; Described inside chip comprises power MOSFET, bipolar operation amplifier, static memory, microprocessor;
(3) if there are the radiation resistance data of corresponding SIP chip in radiation data storehouse, and all SIP chips all can reach anti-single particle index request, and described radioresistance index request is as follows: locking single particle LET threshold value is greater than 75MeV.cm
2/ mg, single-particle inversion threshold value and single event function interrupt threshold value are greater than 37MeV.cm
2/ mg, then think that whole SiP reaches anti-single particle index request, and enter step (7); If certain SIP inside chip fails to reach in anti-single particle index or radiation data storehouse do not have the corresponding radiance test figure of certain SIP chip, enter step (4);
(4) judge in SiP device, whether there is the chip being in stacked package, if having, enter step (5), otherwise enter step (6);
(5) judge that whether the neighbouring chip being in stacked package is identical, if difference, enter step (6), if identical, enter step (7);
(6) chip that cannot will be radiated below stacked package, is packaged into device separately;
(7) to be packaged into the chip of device and step (5) in step (6) but in have in stacked identical chip and step (4) and carry out single particle effect test without stacked chip, obtain test figure, and judge whether to meet radioresistance index request;
Judge whether that the concrete mode meeting radioresistance index request is as follows:
(7a) judge whether chip locking single particle LET threshold value is greater than 75MeV.cm
2/ mg, if be greater than, enters step (7a), otherwise enters step (9);
(7b) judge whether chip single-particle inversion threshold value and single event function interrupt threshold value are greater than 37MeV.cm
2/ mg, if be greater than, enters step (9), otherwise enters step (8);
(8) single particle effect test is carried out to whole SiP, all chips are assembled, and EDAC reinforcing has been carried out to the SiP after assembling, then single particle effect test is carried out to whole SiP, and judge whether whole SIP meets radioresistance index request.
(9) terminate.
2. a kind of SiP device anti-single particle effect capability appraisal procedure according to claim 1, is characterized in that: adopt the cap method of opening in GJB548 method open cap process to SiP or adopt acid corrosion means to remove chip outer package in step (1).
3. a kind of SiP device anti-single particle effect capability appraisal procedure according to claim 1, is characterized in that: the specific implementation of step (7) single particle effect experiment is as follows:
(71) can multilevel iudge heavy ion test bundle spot size cover whole device, if can, direct single particle effect test is carried out to SiP device, obtain test figure, judge whether to meet anti-single particle index; If can not, enter step (72);
(72) first to cover anti-single particle ability lower or do not have the chip of test figure for test bundle spot, carries out single particle effect test, then covered by test bundle spot and tested the chip be not covered to, revision test last time.
4. a kind of SiP device anti-single particle effect capability appraisal procedure according to claim 3, is characterized in that: the method step carrying out single particle effect test in step (71) and (72) is as follows:
(711) utilize heavy ion accelerator to carry out strong irradiation to the chip being packaged into separately device, irradiation intensity increases gradually, and the heavy ion carrying out locking single particle experiment employing is Bi, and the heavy ion carrying out single-particle inversion experiment employing is Ge;
(712) during carrying out single particle effect, according to the function that chip realizes, multichannel same instructions information is sent to chip, and judge whether multichannel instruction performs correctly according to chip output, if whether chip output expects identical with chip and whether multichannel condition execution instruction is consistent, during for judging locking single particle and single-particle inversion occur, chip operation situation.
5. a kind of SiP device anti-single particle effect capability appraisal procedure according to claim 3, is characterized in that: in step (6a), bundle spot area is generally 2cm*2cm.
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