CN105070655A - Method for passivating gallium antimonide wafer - Google Patents
Method for passivating gallium antimonide wafer Download PDFInfo
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- CN105070655A CN105070655A CN201510414951.8A CN201510414951A CN105070655A CN 105070655 A CN105070655 A CN 105070655A CN 201510414951 A CN201510414951 A CN 201510414951A CN 105070655 A CN105070655 A CN 105070655A
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- CN
- China
- Prior art keywords
- gallium antimonide
- ammonium sulfide
- sulfide solution
- passivation
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000919 ceramic Substances 0.000 claims abstract description 31
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 claims abstract description 29
- 238000002161 passivation Methods 0.000 claims abstract description 29
- 238000005498 polishing Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 239000007921 spray Substances 0.000 claims description 20
- 238000001035 drying Methods 0.000 claims description 10
- 239000000126 substance Substances 0.000 abstract description 7
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 4
- 230000002269 spontaneous effect Effects 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052760 oxygen Inorganic materials 0.000 abstract description 2
- 239000001301 oxygen Substances 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000011010 flushing procedure Methods 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
- 229910005542 GaSb Inorganic materials 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- FAWGZAFXDJGWBB-UHFFFAOYSA-N antimony(3+) Chemical compound [Sb+3] FAWGZAFXDJGWBB-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Chemical group 0.000 description 1
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical group [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a method for passivating a gallium antimonide wafer. The method comprises the steps of after polishing, taking a ceramic plate out, spraying deionized water to the ceramic plate for 10-30 seconds; after spraying, directly immersing the ceramic plate into an ammonium sulfide solution with a temperature of 5-30 DEG C in a manner that the liquid surface of the ammonium sulfide solution is higher than the surface of the gallium antimonide wafer by 5-10mm, and performing passivation for 20-120s; and after passivation, taking the ceramic plate out, flushing with the deionized water, and after blowing the ceramic plate to dry through compressed air, preparing to perform a next cleaning process. The ammonium sulfide solution is used for performing passivation processing on the surface of the gallium antimonide wafer after polishing, and a sulfide passivation layer with a thickness of several nanometers can be formed on the surface of the wafer in a relatively high speed. The sulfide layer has advantages of uniform distribution, stable chemical property in air, no spontaneous action with oxygen, and fixed chemical component in a relatively long time period. Furthermore the surface electrical property of a finished gallium antimonide wafer is greatly improved.
Description
Technical field
The present invention relates to the processing technology of semi-conducting material, especially relate to a kind of passivating method of gallium antimonide monocrystalline sheet.
Background technology
GaSb (gallium antimonide) is a kind of multiduty III-V type semi-conducting material, and the heterojunction of GaSb and other semi-conducting materials shows good application prospect on the photodetector of near infrared laser, light-emitting diode, air pollution detecting device, heat-optoelectronic device and wave-length coverage 2-5 and 8-14 μm.In addition, the lattice constant of GaSb makes it be very suitable for as AlGaIn(gallium aluminium indium), AsSb(antimony arsenic) etc. the epitaxial growth surface of ternary or quaternary III-V type semiconductor and other superlattice structures.
GaSb chemical property is very active, and very easily in oxidation, this makes antimony element tend to generate natural oxide layer in the course of processing, thus creates high density surface state and the complex centre without transmitting on original GaSb surface.And oxidation creates simple substance antimony element layer, its existence defines a conductive channel parallel with active region, makes the electrical property of the semiconductor device obtained thus unsatisfactory.
In order to obtain the good GaSb wafer of surface property, passivation technology must be implemented to wafer, to ensure that smooth wafer surface can not form natural oxidizing layer in atmosphere, and affecting performance.
Summary of the invention
The object of this invention is to provide a kind of passivating method of gallium antimonide monocrystalline sheet, the method when the smooth crystal face of not damage polish acquisition, can obtain stable sulfur passivation layer in gallium antimonide wafer surface, and stops the formation of oxide layer.
In order to achieve the above object, the technical scheme that the present invention takes is: a kind of passivating method of gallium antimonide monocrystalline sheet, it is characterized in that, after chemico-mechanical polishing, the ceramic disk being loaded with gallium antimonide monocrystalline sheet is taken off, rapid use deionized water sprays ceramic disk, and spray time controls at 10-30s; After spray terminates, ceramic disk is directly immersed in ammonium sulfide solution; Ammonium sulfide solution temperature is 5-30 DEG C; Ammonium sulfide solution consumption is that liquid level did not have gallium antimonide monocrystalline sheet surface 5-10mm; Passivation duration is 20-120s; After passivation technology terminates, ceramic disk is taken out, with deionized water rinsing, until residual ammonium sulfide solution is all cleaned; After drying up with compressed air, prepare the cleaning of carrying out next step.
The invention has the beneficial effects as follows: Passivation Treatment is carried out on the GaSb crystal surface after adopting ammonium sulfide solution to terminate polishing, the sulfide passivation layer of several nanometer thickness can be formed with speed faster in wafer surface.The distribution of this sulfuric horizon is homogeneous, and stable chemical nature in atmosphere can not effect spontaneous with oxygen, longer time scale maintains the fixing of chemical composition, substantially increases the surperficial electric property of finished product gallium antimonide wafer.In addition, the chemical action of ammonium sulfide solution is moderate, can not destroy the flat surface formed in glossing, through the wafer surface of transpassivation, within its surface roughness Ra still can remain on 1nm.
The action principle of gallium antimonide monocrystalline sheet passivating method: the GaSb crystal remained on surface after polishing more polishing fluid, oxidizing component in these polishing fluids causes damage by the surface topography of wafer, spray is needed to clean, the acting in conjunction of water and air simultaneously will speed up the autoxidation on gallium antimonide surface, have selected a comparatively suitable spray time for this reason, both adverse effects are obtained and limits to greatest extent; Ammonium sulfide is the passivator that the present invention selects meticulously; element sulphur and antimony and gallium bonding more stable; can not the compound of spontaneous oxidation in atmosphere; and two kinds of sulfide are all removed easily through physics mode; in multiple vulcanizing agent; ammonium sulfide has the fastest reaction rate on the basis ensureing surface quality, coordinates the temperature and time of passivation technology, guarantees the passivation protection layer obtaining suitable thickness.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
The work flow of gallium antimonide monocrystalline sheet comprises grinding, polishing, passivation and cleaning, and this method is mainly for passivation step wherein.First by gallium antimonide wafer grinding extremely uniform thickness, and damage when removing section; Subsequently ground gallium antimonide monocrystalline sheet is cleaned up, gallium antimonide monocrystalline sheet to be pasted onto uniformly on ceramic load plate and compacting with quartzy wax, by wipes of alcohol except ceramic load plate and the unnecessary wax of wafer surface, clean up; Then alkalescence polishing liquid is utilized to carry out chemico-mechanical polishing.After chemico-mechanical polishing, enter passivation step.
1. passivating solution prepares
In the circular channels of diameter 20cm, inject appropriate ammonium sulfide solution (concentration is 21%), liquid surface height controlling there had not been gallium antimonide monocrystalline sheet surface 5-10mm.Carry out suitable heating/cooling, the temperature of ammonium sulfide solution is controlled at 5-30 DEG C.
2. passivation technology
After chemico-mechanical polishing, taken off by the ceramic disk being loaded with gallium antimonide monocrystalline sheet, use rapidly deionized water to spray ceramic disk, spray time should control at 10-30s.Dry process is not done after spray terminates, directly immersed by ceramic disk in preprepared ammonium sulfide solution, passivation duration is 20-120s, after passivation technology terminates, ceramic disk is taken out container, use a large amount of deionized water rinsing, until residual ammonium sulfide solution is all cleaned.After drying up with compressed air, prepare the cleaning of carrying out next step.
Embodiment 1
1. passivating solution prepares
In the circular channels of diameter 20cm, inject the ammonium sulfide solution that appropriate concentration is 21%, liquid surface height controlling there had not been gallium antimonide monocrystalline sheet surface 5mm.The temperature of ammonium sulfide solution is controlled at 20 DEG C.
2. passivation technology
After chemico-mechanical polishing, taken off by the ceramic disk being loaded with gallium antimonide monocrystalline sheet, use rapidly deionized water to spray ceramic disk, spray time should control at 10s.Do not do dry process after spray terminates, directly immersed by ceramic disk in preprepared ammonium sulfide solution, passivation duration is 120s, is taken out by ceramic disk, use a large amount of deionized water rinsing after passivation technology terminates, until residual ammonium sulfide solution is all cleaned.After drying up with compressed air, prepare the cleaning of carrying out next step.
Through atomic force microscope test, through the GaSb wafer that embodiment 1 processes, its surface roughness Ra is the sweep limits of 0.96nm(atomic force microscope is 10 μm × 10 μm).
Embodiment 2
1. passivating solution prepares
In the circular channels of diameter 20cm, inject the ammonium sulfide solution that appropriate concentration is 21%, liquid surface height controlling there had not been gallium antimonide monocrystalline sheet surface 5mm.The temperature of solution is controlled at 20 DEG C.
2. passivation technology
After chemico-mechanical polishing, taken off by the ceramic disk being loaded with gallium antimonide monocrystalline sheet, use rapidly deionized water to spray ceramic disk, spray time should control at 15s.Do not do dry process after spray terminates, directly immersed by ceramic disk in preprepared ammonium sulfide solution, passivation duration is 90s, is taken out by ceramic disk, use a large amount of deionized water rinsing after passivation technology terminates, until residual ammonium sulfide solution is all cleaned.After drying up with compressed air, prepare the cleaning of carrying out next step.
Through atomic force microscope test, through the GaSb wafer that embodiment 2 processes, its surface roughness Ra is the sweep limits of 0.65nm(atomic force microscope is 10 μm × 10 μm).
Embodiment 3
1. passivating solution prepares
In the circular channels of diameter 20cm, inject the ammonium sulfide solution that appropriate concentration is 21%, liquid surface height controlling there had not been gallium antimonide monocrystalline sheet surface 5mm.The temperature of solution is controlled at 20 DEG C.
2. passivation technology
After chemico-mechanical polishing, taken off by the ceramic disk being loaded with gallium antimonide monocrystalline sheet, use rapidly deionized water to spray ceramic disk, spray time should control at 15s.Do not do dry process after spray terminates, directly immersed by ceramic disk in preprepared ammonium sulfide solution, passivation duration is 30s, is taken out by ceramic disk, use a large amount of deionized water rinsing after passivation technology terminates, until residual ammonium sulfide solution is all cleaned.After drying up with compressed air, prepare the cleaning of carrying out next step.
Through atomic force microscope test, through the GaSb wafer that embodiment 3 processes, its surface roughness Ra is the sweep limits of 0.49nm(atomic force microscope is 10 μm × 10 μm).
Embodiment 3 is preferred embodiment, because its surface roughness Ra value is relatively minimum.
Claims (1)
1. a passivating method for gallium antimonide monocrystalline sheet, is characterized in that, after chemico-mechanical polishing, is taken off by the ceramic disk being loaded with gallium antimonide monocrystalline sheet, and use rapidly deionized water to spray ceramic disk, spray time controls at 10-30s; After spray terminates, ceramic disk is directly immersed in ammonium sulfide solution; Ammonium sulfide solution temperature is 5-30 DEG C; Ammonium sulfide solution consumption is that liquid level did not have gallium antimonide monocrystalline sheet surface 5-10mm; Passivation duration is 20-120s; After passivation technology terminates, ceramic disk is taken out, with deionized water rinsing, until residual ammonium sulfide solution is all cleaned; After drying up with compressed air, prepare the cleaning of carrying out next step.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510414951.8A CN105070655A (en) | 2015-07-15 | 2015-07-15 | Method for passivating gallium antimonide wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510414951.8A CN105070655A (en) | 2015-07-15 | 2015-07-15 | Method for passivating gallium antimonide wafer |
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| CN105070655A true CN105070655A (en) | 2015-11-18 |
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| CN201510414951.8A Pending CN105070655A (en) | 2015-07-15 | 2015-07-15 | Method for passivating gallium antimonide wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112077691A (en) * | 2020-07-28 | 2020-12-15 | 武汉高芯科技有限公司 | Polishing method of gallium antimonide single crystal wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241019A (en) * | 1998-07-01 | 2000-01-12 | 中国科学技术大学 | Process for using sulfur to passivate surface of semiconductor made of group IIIA-VA compounds |
| US20020182840A1 (en) * | 2001-05-31 | 2002-12-05 | Dominique Lorans | Method for the sulphidation treatment of III-V compound semiconductor surfaces |
| CN1649104A (en) * | 2004-12-17 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Surface inactivating method for antimonite and its device |
| CN101858836A (en) * | 2009-04-08 | 2010-10-13 | 中国科学院半导体研究所 | Chemical corrosion method of manganese doped gallium antimonide monocrystalline |
| CN102554750A (en) * | 2010-12-29 | 2012-07-11 | 北京有色金属研究总院 | Double-surface polishing method for gallium antimonide wafer |
| CN102660775A (en) * | 2012-04-24 | 2012-09-12 | 长春理工大学 | Method for treating GaSb substrate by using two-step method of sulfur passivation and rapid thermal annealing |
| CN103474501A (en) * | 2013-09-13 | 2013-12-25 | 中国科学技术大学 | Selective emitter gallium antimonide infrared battery and manufacturing method thereof |
| CN103578957A (en) * | 2013-11-01 | 2014-02-12 | 清华大学 | Substrate surface passivating method and semiconductor structure forming method |
| CN104465891A (en) * | 2014-12-30 | 2015-03-25 | 南开大学 | Manufacturing method of GaSb / CdS heterogenous junction film hermophotovoltaic cell |
-
2015
- 2015-07-15 CN CN201510414951.8A patent/CN105070655A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241019A (en) * | 1998-07-01 | 2000-01-12 | 中国科学技术大学 | Process for using sulfur to passivate surface of semiconductor made of group IIIA-VA compounds |
| US20020182840A1 (en) * | 2001-05-31 | 2002-12-05 | Dominique Lorans | Method for the sulphidation treatment of III-V compound semiconductor surfaces |
| CN1649104A (en) * | 2004-12-17 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Surface inactivating method for antimonite and its device |
| CN101858836A (en) * | 2009-04-08 | 2010-10-13 | 中国科学院半导体研究所 | Chemical corrosion method of manganese doped gallium antimonide monocrystalline |
| CN102554750A (en) * | 2010-12-29 | 2012-07-11 | 北京有色金属研究总院 | Double-surface polishing method for gallium antimonide wafer |
| CN102660775A (en) * | 2012-04-24 | 2012-09-12 | 长春理工大学 | Method for treating GaSb substrate by using two-step method of sulfur passivation and rapid thermal annealing |
| CN103474501A (en) * | 2013-09-13 | 2013-12-25 | 中国科学技术大学 | Selective emitter gallium antimonide infrared battery and manufacturing method thereof |
| CN103578957A (en) * | 2013-11-01 | 2014-02-12 | 清华大学 | Substrate surface passivating method and semiconductor structure forming method |
| CN104465891A (en) * | 2014-12-30 | 2015-03-25 | 南开大学 | Manufacturing method of GaSb / CdS heterogenous junction film hermophotovoltaic cell |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112077691A (en) * | 2020-07-28 | 2020-12-15 | 武汉高芯科技有限公司 | Polishing method of gallium antimonide single crystal wafer |
| CN112077691B (en) * | 2020-07-28 | 2022-07-22 | 武汉高芯科技有限公司 | Polishing method of gallium antimonide single crystal wafer |
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Application publication date: 20151118 |