CN105070314A - Circuit for improving reading reliability of spin magnetic random access memory - Google Patents
Circuit for improving reading reliability of spin magnetic random access memory Download PDFInfo
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- CN105070314A CN105070314A CN201510523684.8A CN201510523684A CN105070314A CN 105070314 A CN105070314 A CN 105070314A CN 201510523684 A CN201510523684 A CN 201510523684A CN 105070314 A CN105070314 A CN 105070314A
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- reading
- read
- write
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention relates to a circuit for improving the reading reliability of a spin magnetic random access memory. The circuit comprises a reading column selection switch, a sensitive amplifier, a read enable switch and a read-write isolation switch. The read-write isolation switch is connected between a write-in driving circuit and a storage bit unit. The read enable switch comprises a first read enable switch and a second read enable switch; the first read enable switch is connected between the input end of the sensitive amplifier and the storage bit unit; and the second read enable switch is connected between a ground wire and the storage bit unit. The reading column selection switch is connected to the output end of the sensitive amplifier. According to the circuit for improving the reading reliability of the spin magnetic random access memory, equivalent resistance between the input end of the sensitive amplifier and the ground wire is correspondingly reduced and the read current of the sensitive amplifier is increased, so that the matching property of two input ends of the sensitive amplifier is improved and the reading reliability of the spin transfer torque magnetic random access memory is improved.
Description
Technical field
The present invention relates to magnetic random memory technical field, particularly relating to spinning moment magnetic random memory (STT-MRAM:SpinTransferTorqueMagneticRandomAccessMemory) technical field, being specifically related to a kind of circuit for improving spin magnetic random memory reading reliability.
Background technology
Storer is the parts for remembering in electronic system, is used to store computer program and various data.Random access memory data can carry out write and the reading of data.Spin transfer torque magnetic random memory possesses low-power consumption, low operating voltage, high density, high speed, the theoretical unrestricted advantage of read-write operation number of times, is expected to " general-purpose storage " that become truly.
Spin transfer torque magnetic random memory studies the most novel random access memory at present, and it generally adopts a storage array and respective peripheral circuit composition.Have multiple storage unit in storage array, as shown in Figure 1, each storage unit comprises magnetic tunnel-junction (MTJ:MagneticTunnelJunction) M11 and wordline and selects transistor M12.The reference layer M113 that wherein magnetic tunnel-junction M11 comprises the variable free layer M111 of magnetic moment direction, magnetic moment direction is fixed and the insulation course M112 be arranged between free layer M111 and reference layer M113, wordline selects one end of transistor to be connected with reference layer M113, free layer M111 and reference layer M113 be parallel or antiparallel relative to magnetic moment direction, and the tunnel magneto of magnetic tunnel-junction corresponds to low resistance (R
p) or high resistance (R
aP), then can represent binary data " 0 " or " 1 " respectively.
The peripheral circuit of storer mainly comprises sense amplifier, code translator, read-write control circuit etc.Spinning moment magnetic random memory is selected can operate each storage unit simply and easily by ranks.Spin transfer torque magnetic random memory adopts electric current writing mode usually.As shown in Figure 2, the write driver circuit of spin transfer torque magnetic random memory comprises write control logic circuit M21, write driver circuit M22, read-write disconnector M23 and column select switch M24.According to input data Input and write enable signal W-enable, produce the electric current I flowing through magnetic tunnel-junction
write, change the opposite magnetization direction of magnetic tunnel-junction.According to the difference of input data, after write, free layer is different with the opposite magnetization direction of reference layer.
See Fig. 3, spinning moment magnetic random memory is being read under mode of operation, first preliminary filling electric-type sense amplifier M320 charges to identical current potential storage bit unit bit line BL-s and reference bit cell bit line BL-r, because the magnetic tunnel-junction of storage bit unit M311 is different with the resistance of the magnetic tunnel-junction of reference bit unit M312, so produce different reading electric current I
readand I
ref, utilize Current-type sensitive amplifier M320, compare I
readand I
refrear output signal Output, and then the data that store of interpretation magnetic tunnel-junction are 0 or l.But for avoiding the store status affecting spinning moment magnetic random memory, general reading electric current is little, and therefore bit line reading electric current is little swing signal, and namely high/low currents difference is very little, I
readand I
refcurrent differential is also very little, therefore requires that the location information read through highly sensitive amplifier, could must export after amplifying.When the opposite magnetization direction of storage bit unit MTJ knot is parallel, MTJ knot shows as low resistance, and is all compared with parallel state low-resistance reference bit unit MTJ tie, because of area greatly, resistance is little, so I
read>I
ref, by comparison and the amplification of Current-type sensitive amplifier M320, exporting Output is digital level 0.When the opposite magnetization direction that storage MTJ ties is antiparallel, MTJ knot shows as high resistance, with parallel state with reference to compared with tie with MTJ, resistance greatly, so I
read<I
ref, by comparison and the amplification of Current-type sensitive amplifier M320, exporting Output is digital level 1.
In figure 3, the reading column selection switch M333 controlled by column selection signal Columns, M334 is arranged on sense amplifier M320 and bit location M312, between M312, read column selection switch M335, M336 is arranged on bit location M312, between M312 and ground wire GND, cause the switching device between the input end of sense amplifier and ground wire GND too much, corresponding branch resistance is larger, reading electric current reduces, the reduction of reading electric current reduces the reading speed of sense amplifier M320 on the one hand, increase the mismatch of sense amplifier M320 two input end on the other hand, the error rate of reading is increased.Therefore, owing to reading the impact that electric current reduces, reduce the reading reliability of circuit.As the core circuit that spin magnetic random memory reads, traditional reading circuit structure cannot meet more and more higher reliability requirement.
Summary of the invention
Technical matters to be solved by this invention provides a kind of circuit for improving spin magnetic random memory reading reliability for above-mentioned prior art, this circuit being used for improving spin magnetic random memory reading reliability can increase reading electric current, and then overcome the defect that traditional reading circuit structure reads little the caused matching difference of electric current, there is high reliability.
The present invention's adopted technical scheme that solves the problem is: a kind of circuit for improving spin magnetic random memory reading reliability, it is connected with write driver circuit and is connected to storage bit unit two ends, comprise reading column selection switch, sense amplifier, read enable switch, read-write disconnector, it is characterized in that: described read-write disconnector is connected between write driver circuit and storage bit unit;
Described enable switch of reading comprises first and reads enable switch and second and read enable switch, described first reads between input end that enable switch is connected to described sense amplifier and storage bit unit, and described second reads enable switch is connected between described ground wire and storage bit unit;
Described reading column selection switch is connected to the output terminal of described sense amplifier.
Preferably, described read-write disconnector comprise the first read-write disconnector, second read-write disconnector and third reading write disconnector;
Described reading column selection switch, first read enable switch, second read enable switch, second read-write disconnector and third reading write disconnector be MOSFET pipe;
Described first read-write disconnector is one and door, an input end of described first read-write disconnector connects write column selection signal wire, another input end of described first read-write disconnector connects write enable signal line, and the output terminal of described first read-write disconnector connects enable signal line;
The drain electrode of described second read-write disconnector connects write driver circuit, and the source electrode of described second read-write disconnector connects storage bit unit, and the grid of described second read-write disconnector connects enable signal line;
The drain electrode that described third reading writes disconnector connects write driver circuit, and the source electrode that described third reading writes disconnector connects storage bit unit, and the grid that described third reading writes disconnector connects enable signal line;
Described first source electrode reading enable switch connects storage bit unit, and the described first drain electrode of reading enable switch connects the input end of sense amplifier, and the described first grid reading enable switch connects reads enable signal line;
The described second source ground line reading enable switch, the described second drain electrode of reading enable switch connects storage bit unit, and the described second grid reading enable switch connects reads enable signal line;
The source electrode of described reading column selection switch connects the output terminal of sense amplifier, the drain electrode connection data output line of described reading column selection switch, and the three-terminal link of described reading column selection switch reads column selection signal wire.
Described storage bit unit comprises a magnetic tunnel-junction and the wordline that is connected with the reference layer of described magnetic tunnel-junction selects transistor;
The source electrode of described second read-write disconnector is connected with the free layer of magnetic tunnel-junction in described storage bit unit, and the source electrode that described third reading writes disconnector selects transistor to be connected with wordline in described storage bit unit;
Described first source electrode reading enable switch is connected with the free layer of magnetic tunnel-junction in storage bit unit, and the described second drain electrode of reading enable switch selects transistor to be connected with wordline in storage bit unit.
Compared with prior art, the invention has the advantages that: will enable switch be read compared to traditional reading circuit, read-write disconnector, reading column selection switch is all connected on the reading branch road between the input end and ground wire of sense amplifier, this is used for improving in the circuit of spin magnetic random memory reading reliability, reading column selection switch is connected to the output terminal of sense amplifier, namely the switching device on sense amplifier reading branch road is decreased, then sense amplifier input end reduction corresponding to the equivalent resistance between ground wire, the reading electric current of sense amplifier improves, thus improve the matching of sense amplifier two input end, improve the reading reliability of spin transfer torque magnetic random memory.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of spinning moment magnetic random memory bit location in prior art.
Fig. 2 is the write circuit figure of spinning moment magnetic random memory bit location in prior art.
Fig. 3 is the reading short circuit figure of spinning moment magnetic random memory bit location in prior art.
Fig. 4 is the circuit diagram of the embodiment of the present invention.
Fig. 5 is the reading circuit figure of spinning moment magnetic random memory multi-bit cell in the embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing embodiment, the present invention is described in further detail.
As shown in Figure 4, the circuit for improving spin magnetic random memory reading reliability in the present embodiment, is connected with write driver circuit M22 and is connected to storage bit unit M440 two ends.
This circuit being used for improving spin magnetic random memory reading reliability comprises reading column selection switch M410, sense amplifier M420, reads enable switch, read-write disconnector.Wherein storage bit unit M440 comprises a magnetic tunnel-junction and the wordline that is connected with the reference layer of described magnetic tunnel-junction selects transistor, and magnetic tunnel-junction then adopts magnetic tunnel-junction of the prior art, and this magnetic tunnel-junction comprises free layer, reference layer and insulation course equally.
In the present embodiment, read-write disconnector comprises the first read-write disconnector M451, the second read-write disconnector M452 and third reading and writes disconnector M453.
Read column selection switch M410, first to read enable switch M431, second and read enable switch M432, the second read-write disconnector M452 and third reading and write disconnector M453 and all adopt MOSFET to manage;
First read-write disconnector M451 is one and door, an input end of the first read-write disconnector M451 connects write column selection signal wire, another input end of first read-write disconnector M451 connects write enable signal line, and the output terminal of the first read-write disconnector M451 connects enable signal line.
The drain electrode of the second read-write disconnector M452 connects write driver circuit M22, and the source electrode of the second read-write disconnector M452 connects the free layer of magnetic tunnel-junction in storage bit unit M440, and the grid of the second read-write disconnector M452 connects enable signal line.
The drain electrode that third reading writes disconnector M453 connects write driver circuit M22, and the source electrode that third reading writes disconnector M453 connects wordline selection transistor in storage bit unit M440, and the grid that third reading writes disconnector M453 connects enable signal line.
Read enable switch to comprise first and read enable switch M431 and second and read enable switch M432.
First source electrode reading enable switch M431 connects the free layer of magnetic tunnel-junction in storage bit unit M440, and the first drain electrode of reading enable switch M431 connects the input end of sense amplifier M420, and the first grid reading enable switch M431 connects reads enable signal line.
The second source ground line GND reading enable switch M432, the second drain electrode of reading enable switch M432 connects wordline in storage bit unit M440 and selects transistor, and the second grid reading enable switch M432 connects reads enable signal line.
The source electrode reading column selection switch M410 connects the output terminal of sense amplifier M420, reads the drain electrode connection data output line of column selection switch M410, and the three-terminal link reading column selection switch M410 reads column selection signal wire.
The circuit for improving spin magnetic random memory reading reliability in the present embodiment, is provided separately read-write disconnector and reading column selection switch, effectively can carries out write and the reading of storage bit unit data.See Fig. 4, under write mode of operation, read enable signal line send transmission to read enable signal R-enable invalid, the write enable signal W-enable that write enable signal line transmits is effective.Read enable signal R-enable control first read enable switch M431 and second read enable switch M432 cut-off, kept apart reading circuit and write circuit.When write enable signal W-enable is effective, when reading the reading column selection signal W-Columns that column selection signal wire transmits and being effective, then effectively read column selection signal W-Columns and effective write enable signal W-enable first read and write disconnector with door process after, produce enable enable signal.This enable signal reads and writes disconnector M452 by the transfer control second of enable signal line and third reading writes disconnector M453 conducting, the drive current I that write driver circuit produces
writeflow through the magnetic tunnel-junction in storage bit unit M440, I
writedirection be 0 or 1 according to data and different, or flow to reference layer from free layer, or flow to free layer from reference layer, complete the write of data 0 or 1 in storage unit M440.
In read mode, the write enable signal W-enable that write enable signal line transmits is invalid, read enable signal line transmits to read enable signal R-enable effective.Invalid write enable signal W-enable with read column selection signal W-Columns through with door process after, what produce is that enable signal enable is invalid, then enable signal enable controls the second read-write disconnector M452 and third reading accordingly and writes disconnector M453 and end, and has effectively isolated write circuit and reading circuit.Effective owing to reading enable signal R-enable, then read enable signal and control first and read enable switch M431 and second and read enable switch M432 conducting, sense amplifier M420 reads the data that store in the storage bit unit M440 output terminal to sense amplifier M420.If it is effective now to read the reading column selection signal R-Columns that column selection signal wire transmits, then read column selection signal R-Columns to control to read column selection switch M410 conducting, the data of reading are transferred to DOL Data Output Line Output from output terminal by sense amplifier M420, and namely the data stored in unit M440 that are stored as read between column selection switch M410 and ground wire GND are read out to DOL Data Output Line Output.This is used for the circuit improving spin magnetic random memory reading reliability, sense amplifier M420 is connected on and reads between column selection switch M410 and storage bit unit M440, be about to read the reading branch road that column selection switch M410 has shifted out sense amplifier M420, the switching device that then sense amplifier M420 reads on branch road reduces, correspondingly, equivalent resistance between the input end of sense amplifier M420 and ground wire GND reduces, the reading electric current of sense amplifier M420 improves, thus improve the matching of sense amplifier M420 two input end, further increase the reading reliability of spin transfer torque magnetic random memory.
As shown in Figure 5, in actual applications, in spin transfer torque magnetic random memory, there is multiple storage bit unit usually.By read the transmission on column selection signal wire reading column selection signal R-Columns-0, R-Columns-1, R-Columns-n determine which read column selection switch M540, M541, M54n conducting, data in the storage bit unit that this reading column selection switch corresponding connects are read out, and are formed and read row passage.
Be exemplified below, see Fig. 5, in a writing mode, write enable signal W-enable is effective, when writing the column selection signal W-Columns-0 in column selection signal wire and being effective, then other write column selection signal W-Columns-1, W-Columns-n is all invalid, then effectively write alignment signal W-Columns-0 and effective write enable signal W-enable through with door process after, produce effective enable signal enable-0 signal.This enable signal enable-0 controls read-write disconnector M510, M511 conducting, the drive current I that write driver circuit produces
writeflowing through the magnetic tunnel-junction in storage bit unit M520, is differences of 0 or 1 according to data, I
writedirection free layer of magnetic tunnel-junction from storage bit unit M520 flow to reference layer, or from storage bit unit M520, the reference layer of magnetic tunnel-junction flows to free layer, storage bit unit M520 is completed to the write of 0 or 1.Other read-write disconnectores then enable signal enable-1, be in cut-off state under the control of enable-n, do not change bank bit bit location M521, storage data in M52n.
In read mode, read enable signal R-enable effective, that effectively reads that enable signal R-enable controls reads enable switch M531, M532, M53 (2n) conducting, sense amplifier read storage bit unit M520, M521, the data that store in M52n are to the output terminal of sense amplifier.When reading the reading column selection signal R-Columns-0 in column selection signal wire and being effective, then other read column selection signal R-Columns-1, R-Columns-n is invalid, by the reading column selection switch M540 then corresponding conducting of reading column selection signal R-Columns-0 and controlling, by read column selection signal R-Columns-1, R-Columns-n control reading column selection switch M541, M54n then ends.Thus, read the data stored in the storage bit unit M520 between column selection switch M540 and ground wire GND and be read out to DOL Data Output Line Output, other read column selection switch M541, storage bit unit M521 between M54n and ground wire GND, data in M52n then can not be read out.
The reading circuit structure of the spin transfer torque magnetic random memory of the present embodiment, effectively can carry out write and the reading of the data of storage bit unit, can overcome traditional reading circuit structural sensitive amp.in to read the defect that electric current is little, matching is poor, under the prerequisite not affecting storage bit unit magnetic tunnel-junction state, add the reading electric current between sense amplifier input end and ground wire GND, increase the matching of sense amplifier two input end, thus improve the reliability of spin transfer torque magnetic random memory reading circuit.
Claims (3)
1. one kind for improving the circuit of spin magnetic random memory reading reliability, it is connected with write driver circuit (M22) and is connected to storage bit unit (M440) two ends, comprise reading column selection switch (M410), sense amplifier (M420), read enable switch, read and write disconnector, it is characterized in that: described read-write disconnector is connected between write driver circuit (M22) and storage bit unit (M440);
Described enable switch of reading comprises first and reads enable switch (M431) and second and read enable switch (M432), described first reads enable switch (M431) is connected between the input end of described sense amplifier (M420) and storage bit unit (M440), and described second reads enable switch (M432) is connected between described ground wire (GND) and storage bit unit (M440);
Described reading column selection switch (M410) is connected to the output terminal of described sense amplifier (M420).
2. the circuit for improving spin magnetic random memory reading reliability according to claim 1, is characterized in that: described read-write disconnector comprises the first read-write disconnector (M451), the second read-write disconnector (M452) and third reading and writes disconnector (M453);
Described reading column selection switch (M410), first read enable switch (M431), second read enable switch (M432), second read-write disconnector (M452) and third reading write disconnector (M453) be MOSFET manage;
Described first read-write disconnector (M451) is one and door, an input end of described first read-write disconnector (M451) connects write column selection signal wire, another input end of described first read-write disconnector (M451) connects write enable signal line, and the output terminal of described first read-write disconnector (M451) connects enable signal line;
The drain electrode of described second read-write disconnector (M452) connects write driver circuit (M22), the source electrode of described second read-write disconnector (M452) connects storage bit unit (M440), and the grid of described second read-write disconnector (M452) connects enable signal line;
The drain electrode that described third reading writes disconnector (M453) connects write driver circuit (M22), the source electrode that described third reading writes disconnector (M453) connects storage bit unit (M440), and the grid that described third reading writes disconnector (M453) connects enable signal line;
Described first source electrode reading enable switch (M431) connects storage bit unit (M440), described first drain electrode of reading enable switch (M431) connects the input end of sense amplifier (M420), and the described first grid reading enable switch (M431) connects reads enable signal line;
The described second source ground line (GND) reading enable switch (M432), described second drain electrode of reading enable switch (M432) connects storage bit unit (M440), and the described second grid reading enable switch (M432) connects reads enable signal line;
The source electrode of described reading column selection switch (M410) connects the output terminal of sense amplifier (M420), the drain electrode connection data output line of described reading column selection switch (M410), the three-terminal link of described reading column selection switch (M410) reads column selection signal wire.
3. the circuit for improving spin magnetic random memory reading reliability according to claim 2, is characterized in that: described storage bit unit (M440) comprises a magnetic tunnel-junction and the wordline that is connected with the reference layer of described magnetic tunnel-junction selects transistor;
The source electrode of described second read-write disconnector (M452) is connected with the free layer of magnetic tunnel-junction in described storage bit unit (M440), and the source electrode that described third reading writes disconnector (M453) selects transistor to be connected with wordline in described storage bit unit (M440);
Described first source electrode reading enable switch (M431) is connected with the free layer of magnetic tunnel-junction in storage bit unit (M440), and the described second drain electrode of reading enable switch (M432) selects transistor to be connected with wordline in storage bit unit (M440).
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| CN201510523684.8A CN105070314A (en) | 2015-08-24 | 2015-08-24 | Circuit for improving reading reliability of spin magnetic random access memory |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1428785A (en) * | 2001-12-21 | 2003-07-09 | 株式会社东芝 | Magnetic random access memory and readout method and mfg. method |
| US20050111253A1 (en) * | 2003-11-24 | 2005-05-26 | Park Wan-Jun | Apparatus and method of analyzing a magnetic random access memory |
| CN103811073A (en) * | 2014-02-28 | 2014-05-21 | 北京航空航天大学 | High-reliability read circuit of non-volatile memory |
-
2015
- 2015-08-24 CN CN201510523684.8A patent/CN105070314A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1428785A (en) * | 2001-12-21 | 2003-07-09 | 株式会社东芝 | Magnetic random access memory and readout method and mfg. method |
| US20050111253A1 (en) * | 2003-11-24 | 2005-05-26 | Park Wan-Jun | Apparatus and method of analyzing a magnetic random access memory |
| CN103811073A (en) * | 2014-02-28 | 2014-05-21 | 北京航空航天大学 | High-reliability read circuit of non-volatile memory |
Non-Patent Citations (3)
| Title |
|---|
| LI ZHANG ET AL.: ""A 16 Kb Spin-Transfer Torque Random Access Memory With Self-Enable Switching and Precharge Sensing Schemes"", 《IEEE TRANSACTIONS ON MAGNETICS》 * |
| LI ZHANG ET AL.: ""Design and analysis of the reference cells for STT-MRAM"", 《IEICE ELECTRONICS EXPRESS》 * |
| 张丽 等: ""一种适用于自旋磁随机存储器的低压写入电路"", 《西安电子科技大学学报（自然科学版）》 * |
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Application publication date: 20151118 |