CN105049007A - High-precision anti-interference comparator and method, and storage structure applying the comparator - Google Patents
High-precision anti-interference comparator and method, and storage structure applying the comparator Download PDFInfo
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- CN105049007A CN105049007A CN201510344750.5A CN201510344750A CN105049007A CN 105049007 A CN105049007 A CN 105049007A CN 201510344750 A CN201510344750 A CN 201510344750A CN 105049007 A CN105049007 A CN 105049007A
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Abstract
The invention discloses a high-precision anti-interference comparator and a method, and a memory structure applying the comparator. The comparator comprises an amplifier and an adjusting module. An input terminal of the amplifier is connected to a reference voltage signal line and an input voltage signal line. The adjusting module is used for adjusting a sensitivity of the amplifier so that the sensitivity of a working state of the amplifier is higher than the sensitivity of an inoperative state of the amplifier. The sensitivity is high when the comparator carries out comparison so that high precision comparison can be realized. After comparison, through changing an amplification factor of the amplifier, the sensitivity of the comparator is reduced so that an anti-interference capability of the comparator is increased. Compared to a hysteresis comparator, a threshold scope of the comparator is more concentrated and can be an exact value. The structure of the comparator is simple.
Description
[technical field]
The present invention relates to electronic technology field, be specifically related to the memory construction of the anti-interference comparator of a kind of high accuracy and this comparator of methods and applications.
[background technology]
In circuit, comparator is a kind of conventional functional unit.Usually realize primarily of amplifier.As shown in Figure 1, be a most frequently used comparator, it is primarily of amplifier and inverter (not gate) composition.The input of amplifier is respectively reference voltage and input.Reference voltage is used for the threshold value determining that comparator compares, and input is the signal being compared detection by comparator.Input signal exports after amplifier relatively after two inverter shapings.
For the existing comparator in Fig. 1, because due to the interference of noise etc. in real work, the output of this comparator may be unstable, even can the result of output error.Therefore in order to solve the problem, hysteresis comparator is suggested, as shown in Figure 2.Hysteresis comparator is at resistance R0, R1 and R2 of reference voltage input terminal access series connection, export the access state being controlled series resistance R2 by feedback loop simultaneously, thus just by the change of resistance R0, R1 and R2 series impedance, the threshold voltage of comparator just can be changed.Thus the interference of noise can be avoided to a certain extent.
But hysteresis comparator also has shortcoming, the comparing voltage value of hysteresis comparator is a voltage range instead of a magnitude of voltage, and therefore the precision of hysteresis comparator will be low, and its antijamming capability is also limited simultaneously.
Meanwhile, need to use comparator when carrying out the reading of data in memory.Generally for can sense data, the comparator reading data in memory needs very high sensitivity, but, due to the interference of the uncertainty of signal in the memory cell in memory and noise etc., sometimes misoperation may be had to produce because the sensitivity of comparator is too high.Can make the error in data of reading like this, affect the accuracy rate of memory, and the accuracy rate of sense data weighs a very important index of memory quality.
[summary of the invention]
The object of the present invention is to provide the memory construction of the anti-interference comparator of a kind of high accuracy and this comparator of methods and applications, to solve the problems of the technologies described above.
To achieve these goals, the present invention adopts following technical scheme:
The anti-interference comparator of a kind of high accuracy, comprises amplifier and adjusting module; The input of amplifier connects reference voltage signal line and input voltage signal line, and the output of amplifier connects adjusting module; Adjusting module, for adjusting the sensitivity of amplifier, makes amplifier operation state Sensitivity higher than non operating state; Or make the sensitivity of amplifier off position lower than operating state.
The present invention further improves and is: adjusting module is that bias current changes module; Bias current changes module, for changing the input bias current of amplifier according to the output end signal of amplifier, the input bias current of amplifier operation state is made to be less than the input bias current of non operating state, and then make the multiplication factor of amplifier operation state be greater than the multiplication factor of non operating state, even if the sensitivity of amplifier operation state is greater than the sensitivity of non operating state.
The present invention further improves and is: it is current mirror that bias current changes module, the image current of current mirror provides bias current for amplifier, current mirror provides the branch road of bias current to be two-way, the fixing access in one road, switch of separately leading up to accesses, and the state of described switch is controlled by the output of amplifier.
The present invention further improves and is: it is common-source common-gate current mirror that bias current changes module, the image current of common-source common-gate current mirror provides bias current for amplifier, there is provided the source class of the common grid level metal-oxide-semiconductor in bias current branch road to be connected to ground by another switch, the state of another switch described is controlled by the output of amplifier.
The present invention further improves and is: described switch is metal-oxide-semiconductor.
The present invention further improves and is: adjusting module is a part for amplifier or is peripheral circuit.
The memory construction of the anti-interference comparator of application high accuracy, comprises the anti-interference comparator of high accuracy; Also comprise memory cell branch road, reference arm and control module; Memory cell branch road comprises memory cell; Reference arm is connect, for generating reference voltage at the normal phase input end of comparator; At the anti-phase input termination memory cell branch road of comparator, for generating input voltage.
The present invention further improves and is:
Memory cell branch road is: memory cell meets metal-oxide-semiconductor MN43 and metal-oxide-semiconductor MN41 successively, and the drain electrode of metal-oxide-semiconductor MN41 connects the inverting input of comparator, and the drain electrode of MN41 receives power supply by resistance R41; The source class of metal-oxide-semiconductor MN43 connects memory cell, and the drain electrode of metal-oxide-semiconductor MN43 is connected with the source class of metal-oxide-semiconductor MN41; Reference arm is: reference current meets metal-oxide-semiconductor MN44 and metal-oxide-semiconductor MN42 successively, and the drain electrode of metal-oxide-semiconductor MN42 connects the normal phase input end of comparator, and the drain electrode of metal-oxide-semiconductor MN42 simultaneously receives power supply by resistance R42; The source class of metal-oxide-semiconductor MN44 connects reference current, and the drain electrode of metal-oxide-semiconductor MN44 is connected with the source class of metal-oxide-semiconductor MN42; The grid of clamper metal-oxide-semiconductor MN41 and MN42 connects clamp signal, and enable metal-oxide-semiconductor MN43 and MN44 connects the first enable signal and the second enable signal respectively; Described control module, for after the sensitivity reducing comparator, comparator enter next normal operating conditions before, change state when work is brought up in the sensitivity of comparator by module by controlling bias current.
The present invention further improves and is: memory cell is RRAM memory cell.
Further improvement of the present invention is: RRAM memory cell is 1T1R structure.
A high accuracy anti-interference method for comparator, the Output rusults according to amplifier judges:
When amplifier transfers non operating state to by operating state, the multiplication factor that the input bias current increasing amplifier makes amplifier when non operating state reduces, the sensitivity namely under step-down amplifier non operating state;
When amplifier transfers operating state to by non operating state, the multiplication factor when input bias current of step-down amplifier makes amplifier in working order improves, and namely improves the sensitivity under amplifier non operating state.
The present invention further improves and is: by the ratio increase of the breadth length ratio of change current mirror or the size of step-down amplifier input bias current.
The present invention further improves and is: by changing the size of gate source voltage increase or the step-down amplifier input bias current providing the metal-oxide-semiconductor of bias current.
Relative to prior art, the present invention has following beneficial effect:
1, when comparator compares, sensitivity is very high, can realize high-precision comparison;
2, relatively, reduced the sensitivity of comparator by the multiplication factor changing amplifier, thus increase the antijamming capability of comparator;
3, relative to hysteresis comparator, the threshold range of comparator is more concentrated, can be a value determined;
4, comparator implementation structure of the present invention is simple.
5, comparator of the present invention uses the accuracy rate that greatly can improve and store data reading in memory, and the accuracy rate of sense data weighs a very important index of memory quality.
[accompanying drawing explanation]
Fig. 1 is the structural representation of existing conventional comparator;
Fig. 2 is the structural representation of hysteresis comparator;
A kind of structural representation of the anti-interference comparator of Fig. 3 a kind of high accuracy of the present invention;
Fig. 4 bias current of the present invention changes a kind of structural representation of module;
Fig. 5 bias current of the present invention changes the another kind of structural representation of module;
Fig. 6 a kind of schematic diagram applying the memory construction of the anti-interference comparator of high accuracy of the present invention.
[embodiment]
For comparator, in theory:
1, the sensitivity of comparator affects the antijamming capability of comparator.Sensitivity more high anti-jamming capacity is poorer.
2, the multiplication factor Av of amplifier affects the sensitivity of comparator.Multiplication factor Av is higher, and the sensitivity of comparator is also higher.
3, by formula
Known: the multiplication factor Av of amplifier is directly proportional to the extraction of square root of the breadth length ratio (W/L) of amplifier input stage metal-oxide-semiconductor; Meanwhile, the extraction of square root of the multiplication factor Av of amplifier and (Id) of bias current is inversely proportional to.
Analyzed from above-mentioned theory: the multiplication factor Av that can be changed amplifier by (Id) of the breadth length ratio (W/L) or bias current that change amplifier input stage metal-oxide-semiconductor, thus change the sensitivity of comparator.
Based on above-mentioned analysis, in order to solve the shortcoming of existing comparator in background technology, obtain the comparator that a high accuracy antijamming capability is strong, can by such process implementation: when comparator compares, keep the sensitivity that comparator is very high, and compare after process terminates at comparator, reduce the sensitivity of comparator.Like this, when comparator both can have been made to compare, precision very high (because highly sensitive when comparator compares), can make again the antijamming capability of comparator strengthen (because reducing the sensitivity of comparator after the comparison).
Just said process can be realized by (Id) that change bias current.
Lower mask body introduces aforementioned implementation.
By adjusting (Id) of bias current:
This process is specially:
Id ↑ → Av ↓ → sensitivity ↓
That is: bias current Id raises, and the multiplication factor Av of amplifier decreases, and causes the sensitivity decrease of amplifier.
As shown in Figure 3, the anti-interference comparator of a kind of high accuracy of the present invention is realized by the change of bias current, it comprises amplifier (amplifier here uses as comparator), bias current changes module and two inverters (effect of two inverters is here: carry out shaping to the signal that amplifier exports, two inverters here not necessarily).The input of amplifier connects reference voltage signal line and input voltage signal line, the output signal of amplifier connects the inverter of two series connection, export after the inverter shaping of two series connection, the output of inverter connects the control end that bias current changes module, and the output that bias current changes module connects comparator (amplifier namely in figure).
Amplifier gives bias current by the output signal feed back input after two inverter shapings and changes module, when comparator carries out work, when the input signal of comparator exceedes the value of reference voltage (value of input signal higher than reference voltage of comparator or the value lower than reference voltage), the output state signal of comparator changes (become low level from high level or become high level from low level).The output signal changed inputs to bias current and changes module, changing module, the bias current Id of amplifier being raised, the therefore multiplication factor Av of step-down amplifier, thus the sensitivity of step-down amplifier by controlling bias current.
Be illustrated in figure 4 bias current of the present invention and change one of way of realization of module.As shown in Figure 4, by changing the ratio of the breadth length ratio of current mirror thus changing the size of bias current Id.MN12 and MN13 and MN11 forms current mirror.MN12 and MN13 produces bias current Id by mirror image MN11.And the size of bias current Id depends on the ratio of the breadth length ratio of MN12 and MN13 and MN11.Be provided with K switch 1 in this circuit.The effect of K switch 1 is in order to change the total breadth length ratio of MN12 and MN13.It is controlled (or the output signal of comparator carries out the signal controlling after shaping through two inverters) by the output signal of comparator.The MN13 access when K switch 1 is connected, the total breadth length ratio of MN12 and MN13 is just larger, thus bias current Id is large; Otherwise MN13 disconnects when K switch 1 disconnects, the total breadth length ratio of MN12 and MN13 is just smaller, thus bias current Id is little.
Detailed process is: when comparator is after having compared, the output signal control switch K1 of comparator connects, the breadth length ratio volume ratio being equivalent to the current mirror producing bias current Id increases, thus bias current Id is increased, multiplication factor Av according to formula (1) known amplifier reduces, thus by the sensitivity of step-down amplifier.The antijamming capability of amplifier improves.It should be noted that K switch 1 here can be realized by metal-oxide-semiconductor.The ratio of the breadth length ratio that said process can simply be interpreted as by changing current mirror changes the size of amplifier input bias current.
Be illustrated in figure 5 the way of realization two that bias current of the present invention changes module.As shown in Figure 5, the current-mirror structure of MN21, MN22, MN23 and MN24 composition cascade (casecode) provides bias current Id to amplifier.Because the drain current of metal-oxide-semiconductor and gate source voltage V
gsproportional.Therefore by the gate source voltage V of metal-oxide-semiconductor MN22 in Fig. 5
gschange thus change the size of bias current Id.K switch 2 is added in Figure 5 in cascodes.Common gate metal-oxide-semiconductor MN22 receives ground by K switch 2.When K switch 2 is connected, the gate source voltage V of MN22
gsbecome large, thus bias current Id becomes large.
Detailed process is: when comparator is after having compared, and the output signal control switch K2 of comparator connects, the gate source voltage V of MN22
gsbecoming causes greatly bias current Id to increase, and the multiplication factor Av according to formula (1) known amplifier reduces, thus by the sensitivity of step-down amplifier.The antijamming capability of amplifier improves.It should be noted that K switch 1 here can be realized by metal-oxide-semiconductor.Said process simply can be interpreted as and provides the gate source voltage of the metal-oxide-semiconductor of bias current by changing thus change the size of bias current.
The anti-interference comparator of a kind of high accuracy of the present invention, comprises amplifier and adjusting module; This adjusting module is a part for amplifier or is peripheral circuit.
Adjusting module, for adjusting the sensitivity of amplifier, making amplifier operation state Sensitivity higher than non operating state or making the sensitivity of amplifier off position lower than operating state.
Adjusting module is that bias current changes module; Bias current changes module, for changing the input bias current of amplifier according to the output end signal of amplifier, the input bias current of amplifier operation state is made to be less than the input bias current of non operating state, and then make the multiplication factor of amplifier operation state be greater than the multiplication factor of non operating state, even if the sensitivity of amplifier operation state is greater than the sensitivity of non operating state.
The high accuracy anti-interference method of a kind of comparator of the present invention, comprising: the Output rusults according to amplifier judges:
When amplifier transfers non operating state to by operating state, increase the input bias current of amplifier, the multiplication factor of amplifier when non operating state is reduced, the sensitivity namely under step-down amplifier non operating state;
When amplifier transfers operating state to by non operating state, the input bias current of step-down amplifier, multiplication factor when making amplifier in working order improves, and namely improves the sensitivity under amplifier non operating state.
A kind of schematic diagram applying the memory construction of the anti-interference comparator of high accuracy of the present invention as shown in Figure 6, wherein used memory is RRAM; RRAM (ResistiveRandomAccessMemory) refers to resistive random asccess memory.
Need to use comparator when carrying out the reading of data in memory.Generally for can sense data, the comparator reading data in memory needs very high sensitivity, but, due to the interference of the uncertainty of signal in the memory cell in memory and noise etc., sometimes misoperation may be had to produce because the sensitivity of comparator is too high.Can make the error in data of reading like this, affect the accuracy rate of memory, and the accuracy rate of sense data weighs a very important index of memory quality.
Be mainly in the application in memory of the anti-interference comparator of high accuracy proposed by the invention, the basis of the anti-interference comparator of aforementioned high accuracy increases control module, control module changes the sensitivity of module to comparator different operating state regulate by controlling bias current, to meet the needs (digital independent with do not read) that memory data reads different conditions.Connect reference arm at the normal phase input end of comparator, for generating reference voltage simultaneously; At the anti-phase input termination memory cell branch road of comparator, for generating input voltage, memory cell branch road comprises storage unit.
As shown in Figure 6, the comparator in figure is the anti-interference comparator of high accuracy proposed by the invention.Figure comprises memory cell branch road and reference arm.Memory cell branch road comprises RRAM memory cell, and memory cell is here 1T1R structure (1Transistor1Resistor).RRAM memory cell meets metal-oxide-semiconductor MN43 and MN41 successively, and the drain electrode of last MN41 connects the inverting input of comparator, and the drain electrode of MN41 simultaneously receives power supply by resistance R41.Here the source class of MN43 connects RRAM memory cell, and the drain electrode of MN43 is connected with the source class of MN41.Similar, in reference arm, reference current meets metal-oxide-semiconductor MN44 and MN42 successively, and the drain electrode of last MN42 connects the normal phase input end of comparator, and the drain electrode of MN42 simultaneously receives power supply by resistance R42.Here the source class of MN44 connects reference current, and the drain electrode of MN44 is connected with the source class of MN42.The grid of clamper metal-oxide-semiconductor MN41 and MN42 connects clamp signal, and enable metal-oxide-semiconductor MN43 and MN44 connects enable signal 1 and enable signal 2 respectively.
Here the anti-interference comparator of high accuracy, except introducing except module above, also add a control module.The effect of control module is after the sensitivity reducing comparator, comparator enter next normal operating conditions before, module is changed by state when bringing up to work after the sensitivity of comparator (by changing the on off state of bias current change module by controlling bias current, reduce bias current) so that comparator normally works next time.Control module can be made up of the logical block of routine and has not here just been described in detail.
Above-mentioned specific works process is: when data encasement reads, and control module changes module by state when bringing up to work after the sensitivity of comparator by controlling bias current.Then the source class of clamper metal-oxide-semiconductor MN41 with MN42 received an identical level by clamp signal, connect enable signal 1 and enable signal 2 controls metal-oxide-semiconductor MN43 and MN44 conducting.Clamp voltage generation current on the variable resistor of RRAM memory cell of metal-oxide-semiconductor MN41 source class, the electric current of memory cell branch road is converted to the end of oppisite phase of input voltage input comparator on resistance R41, the electric current of reference arm is reference current, and reference current is converted to the positive terminal of reference voltage input comparator on resistance R42.By the resistance value state relatively just can knowing resistance in RRAM memory cell of comparator.The situation of concrete RRAM memory cell does not just here describe in detail.After comparator relatively (after namely data normally read), bias current changes module by the sensitivity decrease of comparator.Now, because the low correct data that the interference effects such as noise just can be avoided to read of sensitivity.In data after being read out completely, control module improves after the sensitivity of comparator by controlling bias current change module again, waits for the reading of data next time.
It is emphasized that the anti-interference comparator of a kind of high accuracy of the present invention also can be used for the memory (memory of the type such as such as DRAM, SRAM, Flash, but be not limited thereto listed type of memory) of other type.1T1R memory cell in said structure need be replaced with the memory cell of respective type when concrete use, and according to dissimilar needs of memory cell, corresponding adjustment is done to memory cell branch road and reference arm, finally input corresponding reference voltage and input voltage at the normal phase input end of comparator and the inverting input of comparator, just do not do detailed introduction and describe here.
Claims (10)
1. the anti-interference comparator of high accuracy, is characterized in that, comprises amplifier and adjusting module;
The input of amplifier connects reference voltage signal line and input voltage signal line, and the output of amplifier connects adjusting module;
Adjusting module, for adjusting the sensitivity of amplifier, makes amplifier operation state Sensitivity higher than non operating state; Or make the sensitivity of amplifier off position lower than operating state.
2. the anti-interference comparator of a kind of high accuracy according to claim 1, is characterized in that, adjusting module is that bias current changes module; Bias current changes module, for changing the input bias current of amplifier according to the output end signal of amplifier, the input bias current of amplifier operation state is made to be less than the input bias current of non operating state, and then make the multiplication factor of amplifier operation state be greater than the multiplication factor of non operating state, even if the sensitivity of amplifier operation state is greater than the sensitivity of non operating state.
3. the anti-interference comparator of a kind of high accuracy according to claim 2, it is characterized in that, it is current mirror that bias current changes module, the image current of current mirror provides bias current for amplifier, current mirror provides the branch road of bias current to be two-way, the fixing access in one road, switch of separately leading up to accesses, and the state of described switch is controlled by the output of amplifier.
4. the anti-interference comparator of a kind of high accuracy according to claim 2, it is characterized in that, it is common-source common-gate current mirror that bias current changes module, the image current of common-source common-gate current mirror provides bias current for amplifier, there is provided the source class of the common grid level metal-oxide-semiconductor in bias current branch road to be connected to ground by another switch, the state of another switch described is controlled by the output of amplifier.
5. the anti-interference comparator of a kind of high accuracy according to claim 1, is characterized in that, adjusting module is a part for amplifier or is peripheral circuit.
6. apply the memory construction of the anti-interference comparator of high accuracy, it is characterized in that, comprise the anti-interference comparator of a kind of high accuracy described in Claims 2 or 3; Also comprise control module, reference arm and memory cell branch road; Reference arm is connect, for generating reference voltage at the normal phase input end of comparator; At the anti-phase input termination memory cell branch road of comparator, for generating input voltage; Memory cell branch road comprises memory cell.
7. the memory construction of the anti-interference comparator of application high accuracy according to claim 6, it is characterized in that, memory cell branch road is: memory cell meets metal-oxide-semiconductor MN43 and metal-oxide-semiconductor MN41 successively, the drain electrode of metal-oxide-semiconductor MN41 connects the inverting input of comparator, and the drain electrode of MN41 receives power supply by resistance R41; The source class of metal-oxide-semiconductor MN43 connects memory cell, and the drain electrode of metal-oxide-semiconductor MN43 is connected with the source class of metal-oxide-semiconductor MN41; Reference arm is: reference current meets metal-oxide-semiconductor MN44 and metal-oxide-semiconductor MN42 successively, and the drain electrode of metal-oxide-semiconductor MN42 connects the normal phase input end of comparator, and the drain electrode of metal-oxide-semiconductor MN42 simultaneously receives power supply by resistance R42; The source class of metal-oxide-semiconductor MN44 connects reference current, and the drain electrode of metal-oxide-semiconductor MN44 is connected with the source class of metal-oxide-semiconductor MN42; The grid of clamper metal-oxide-semiconductor MN41 and MN42 connects clamp signal, and enable metal-oxide-semiconductor MN43 and MN44 connects the first enable signal and the second enable signal respectively; Described control module, for after the sensitivity reducing comparator, comparator enter next normal operating conditions before, change state when work is brought up in the sensitivity of comparator by module by controlling bias current.
8. a high accuracy anti-interference method for comparator, is characterized in that, the Output rusults according to amplifier judges:
When amplifier transfers non operating state to by operating state, the multiplication factor that the input bias current increasing amplifier makes amplifier when non operating state reduces, the sensitivity namely under step-down amplifier non operating state;
When amplifier transfers operating state to by non operating state, the multiplication factor when input bias current of step-down amplifier makes amplifier in working order improves, and namely improves the sensitivity under amplifier non operating state.
9. the high accuracy anti-interference method of a kind of comparator according to claim 8, is characterized in that, by the ratio increase of the breadth length ratio of change current mirror or the size of step-down amplifier input bias current.
10. the high accuracy anti-interference method of a kind of comparator according to claim 8, is characterized in that, by changing the size of gate source voltage increase or the step-down amplifier input bias current providing the metal-oxide-semiconductor of bias current.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195323A (en) * | 2017-07-13 | 2017-09-22 | 高科创芯(北京)科技有限公司 | Double deference negative-feedback data reading circuit and its method based on memristor |
| CN107291133A (en) * | 2017-06-15 | 2017-10-24 | 深圳市德赛微电子技术有限公司 | Negative voltage comparator circuit |
| CN109410997A (en) * | 2017-08-16 | 2019-03-01 | 华邦电子股份有限公司 | Resistance-type memory storage device and its wiring method |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4069431A (en) * | 1976-12-22 | 1978-01-17 | Rca Corporation | Amplifier circuit |
| CN1066942A (en) * | 1991-01-04 | 1992-12-09 | 莫托罗拉公司 | The method of optimizing performance of power amplifier circuit and device thereof |
| CN1501401A (en) * | 2002-07-16 | 2004-06-02 | ��������˹�����տ����� | Thin film magnetic memory device provided with magnetic tunnel junctions |
| EP1511173A2 (en) * | 2003-08-28 | 2005-03-02 | Flying Mole Corporation | Power conversion apparatus and dead time generator |
| CN1661894A (en) * | 2004-02-27 | 2005-08-31 | 恩益禧电子股份有限公司 | Power supply circuit |
| CN1993885A (en) * | 2004-08-03 | 2007-07-04 | 日本电信电话株式会社 | Transimpedance amplifier |
| CN102361435A (en) * | 2011-10-28 | 2012-02-22 | 电子科技大学 | Variable gain broadband low-noise amplifier |
| CN103079143A (en) * | 2012-12-20 | 2013-05-01 | 广州视睿电子科技有限公司 | sound pickup method and system |
| CN103675860A (en) * | 2013-12-23 | 2014-03-26 | 上海艾为电子技术有限公司 | Global satellite navigation system receiving device |
| CN203733475U (en) * | 2014-03-03 | 2014-07-23 | 山东华芯半导体有限公司 | 2-1T1R RRAM (2-1 transistor 1 resistor resistive random access memory) storage unit with self-reference reading function |
| CN204733142U (en) * | 2015-06-19 | 2015-10-28 | 西安华芯半导体有限公司 | The anti-interference comparator of high accuracy and apply the memory construction of this comparator |
-
2015
- 2015-06-19 CN CN201510344750.5A patent/CN105049007B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4069431A (en) * | 1976-12-22 | 1978-01-17 | Rca Corporation | Amplifier circuit |
| CN1066942A (en) * | 1991-01-04 | 1992-12-09 | 莫托罗拉公司 | The method of optimizing performance of power amplifier circuit and device thereof |
| CN1501401A (en) * | 2002-07-16 | 2004-06-02 | ��������˹�����տ����� | Thin film magnetic memory device provided with magnetic tunnel junctions |
| EP1511173A2 (en) * | 2003-08-28 | 2005-03-02 | Flying Mole Corporation | Power conversion apparatus and dead time generator |
| CN1661894A (en) * | 2004-02-27 | 2005-08-31 | 恩益禧电子股份有限公司 | Power supply circuit |
| CN1993885A (en) * | 2004-08-03 | 2007-07-04 | 日本电信电话株式会社 | Transimpedance amplifier |
| CN102361435A (en) * | 2011-10-28 | 2012-02-22 | 电子科技大学 | Variable gain broadband low-noise amplifier |
| CN103079143A (en) * | 2012-12-20 | 2013-05-01 | 广州视睿电子科技有限公司 | sound pickup method and system |
| CN103675860A (en) * | 2013-12-23 | 2014-03-26 | 上海艾为电子技术有限公司 | Global satellite navigation system receiving device |
| CN203733475U (en) * | 2014-03-03 | 2014-07-23 | 山东华芯半导体有限公司 | 2-1T1R RRAM (2-1 transistor 1 resistor resistive random access memory) storage unit with self-reference reading function |
| CN204733142U (en) * | 2015-06-19 | 2015-10-28 | 西安华芯半导体有限公司 | The anti-interference comparator of high accuracy and apply the memory construction of this comparator |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107291133A (en) * | 2017-06-15 | 2017-10-24 | 深圳市德赛微电子技术有限公司 | Negative voltage comparator circuit |
| CN107291133B (en) * | 2017-06-15 | 2019-04-02 | 深圳市德赛微电子技术有限公司 | Negative voltage comparator circuit |
| CN107195323A (en) * | 2017-07-13 | 2017-09-22 | 高科创芯(北京)科技有限公司 | Double deference negative-feedback data reading circuit and its method based on memristor |
| CN109410997A (en) * | 2017-08-16 | 2019-03-01 | 华邦电子股份有限公司 | Resistance-type memory storage device and its wiring method |
| CN109410997B (en) * | 2017-08-16 | 2021-04-30 | 华邦电子股份有限公司 | Resistive memory storage device and writing method thereof |
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| CN105049007B (en) | 2019-05-14 |
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