CN105047727A - Silica gel embedding technology for photoelectric detector with ceramic tube casing - Google Patents
Silica gel embedding technology for photoelectric detector with ceramic tube casing Download PDFInfo
- Publication number
- CN105047727A CN105047727A CN201510297152.7A CN201510297152A CN105047727A CN 105047727 A CN105047727 A CN 105047727A CN 201510297152 A CN201510297152 A CN 201510297152A CN 105047727 A CN105047727 A CN 105047727A
- Authority
- CN
- China
- Prior art keywords
- silica hydrogel
- confined space
- photodetector
- silica gel
- carried out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 239000000919 ceramic Substances 0.000 title claims abstract description 15
- 238000005516 engineering process Methods 0.000 title claims abstract description 13
- 239000000741 silica gel Substances 0.000 title abstract 7
- 229910002027 silica gel Inorganic materials 0.000 title abstract 7
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000000017 hydrogel Substances 0.000 claims description 50
- 239000000377 silicon dioxide Substances 0.000 claims description 50
- 239000000499 gel Substances 0.000 abstract 2
- 238000007872 degassing Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000037303 wrinkles Effects 0.000 abstract 1
- 239000000084 colloidal system Substances 0.000 description 16
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to a silica gel embedding technology for a photoelectric detector with a ceramic tube casing. The technology is characterized in that in the embedding process, degassing is carried out after silica gel is prepared and also after the silica gel is embedded, and when the silica gel is solidified, the silica gel is gradually heated and solidified in the stepped heating manner. The silica gel embedding technology has the advantages that bubbles in the gel can be effectively exhausted, the gel is effectively avoided from wrinkle and crack after being solidified, and the yield and quality of products are improved.
Description
Technical field
The present invention relates to a kind of photodetector encapsulation technology, particularly relate to a kind of ceramic cartridge photodetector Silica hydrogel dosing technology.
Background technology
Because Silica hydrogel has the optical characteristics of high permeability, Silica hydrogel encapsulation technology is widely used in photovoltaic.
In prior art when implementing Silica hydrogel embedding, generally the Silica hydrogel prepared is filled in shell, then 150 DEG C of solidifications are directly warming up to, Problems existing is: prepare the process of Silica hydrogel and Silica hydrogel injected the process of shell, all to have in Air infitration colloid and to form bubble, in addition, when carrying out embedding to the shell of ceramic material, because inner wall of tube shell is comparatively coarse, add the relative thickness of Silica hydrogel, when Silica hydrogel just injects, at short notice the depression on inner wall of tube shell cannot be filled completely, thus make residually on inner wall of tube shell to leave more bubble, after Silica hydrogel solidification, all be there is deterioration by the cavity formed by bubble in the photoelectric properties and material property that cause Silica hydrogel, affect product quality, in addition, in Silica hydrogel solidification process, the physical aspect of colloid can change, the internal stress of colloid also can change thereupon, because heat infiltrates colloid inside gradually from colloid outside, cause the solidification progress property of there are differences inside and outside colloid, prior art is directly warming up to the way of 150 DEG C of solidifications, colloid rapid curing from outside to inside at short notice can be caused, stress in colloid has little time redistribution at short notice at all, this just makes colloid internal stress skewness, and fold, be full of cracks easily appear in colloid surface, affects the photoelectric properties of Silica hydrogel.
Summary of the invention
For the problem in background technology, the present invention proposes a kind of ceramic cartridge photodetector Silica hydrogel dosing technology, its innovation is: implement Silica hydrogel embedding to the photodetector of ceramic cartridge as follows:
1) in container, Silica hydrogel is prepared;
2) container filling Silica hydrogel is placed in confined space, dynamic adjustments is carried out to the air pressure in confined space, the air pressure in confined space is back and forth fluctuated between 0MPa and normal pressure, in operating process, Continuous Observation is carried out to Silica hydrogel, to be seen in Silica hydrogel during bubble-free, operation terminates;
3) Silica hydrogel is injected the ceramic cartridge inner chamber having mounted photoelectric detector chip, then leave standstill more than 2 hours;
4) photodetector is placed in confined space, dynamic adjustments is carried out to the air pressure in confined space, the air pressure in confined space is back and forth fluctuated between 0MPa and normal pressure, in operating process, Continuous Observation is carried out to Silica hydrogel, to be seen in Silica hydrogel during bubble-free, operation terminates;
5) photodetector is placed in baking oven, regulate oven temperature to 70C ° and be incubated 30 minutes, then regulate oven temperature to 100C ° and be incubated 30 minutes, then regulate oven temperature to 150C ° and be incubated 60 minutes, then close baking oven power supply, treat that oven temperature naturally cools to room temperature.
Principle of the present invention is: the composition and engineering preparing Silica hydrogel in step 1) is same as the prior art, step 2 of the present invention) and 4) two stages, process is exhausted to Silica hydrogel respectively: step 2) pump-down process be arranged at step 1) after, for getting rid of the bubble infiltrated in Silica hydrogel process for preparation, after step 4) is arranged at step 3), the time of repose of step 3) can make Silica hydrogel the depression on ceramic cartridge inwall fully be filled, thus make on ceramic cartridge inwall because the cavity be recessed to form is present in Silica hydrogel in the form of bubbles, the bubble infiltrated when the operation of these removal of bubbles (step 4) also simultaneously being injected by Silica hydrogel by the operation of step 4) has again been discharged), in the present invention when carrying out elevated cure to Silica hydrogel, adopt the mode of ladder-elevating temperature (being also mode in step 5)): in step 5), before reaching 150C °, the present invention all will be incubated 30 minutes under the 70C ° of temperature conditions with 100C °, this leaves the time with regard to giving the conduction of heat, thus the solidification rate otherness of Silica hydrogel inside and outside is relaxed, and when being less than or equal to 100C °, the solidification rate of Silica hydrogel is comparatively slow (from microcosmic, the cross-linking reaction just shown as between component is comparatively slow), the mobility of colloid is better, temperature retention time leaves the sufficient time just to colloid internal flow, before utilizing colloid to solidify completely, the mobility of self is uniformly distributed to make its internal stress, thus effectively avoid colloid to occur fold and be full of cracks.
Advantageous Effects of the present invention is: the bubble in colloid effectively can be discharged, and occurs fold and be full of cracks simultaneously, the rate of finished products of product and quality are all improved after effectively avoiding colloid to solidify.
Embodiment
A kind of ceramic cartridge photodetector Silica hydrogel dosing technology, its innovation is: implement Silica hydrogel embedding to the photodetector of ceramic cartridge as follows:
1) in container, Silica hydrogel is prepared;
2) container filling Silica hydrogel is placed in confined space, dynamic adjustments is carried out to the air pressure in confined space, the air pressure in confined space is back and forth fluctuated between 0MPa and normal pressure, in operating process, Continuous Observation is carried out to Silica hydrogel, to be seen in Silica hydrogel during bubble-free, operation terminates;
3) Silica hydrogel is injected the ceramic cartridge inner chamber having mounted photoelectric detector chip, then leave standstill more than 2 hours;
4) photodetector is placed in confined space, dynamic adjustments is carried out to the air pressure in confined space, the air pressure in confined space is back and forth fluctuated between 0MPa and normal pressure, in operating process, Continuous Observation is carried out to Silica hydrogel, to be seen in Silica hydrogel during bubble-free, operation terminates;
5) photodetector is placed in baking oven, regulate oven temperature to 70C ° and be incubated 30 minutes, then regulate oven temperature to 100C ° and be incubated 30 minutes, then regulate oven temperature to 150C ° and be incubated 60 minutes, then close baking oven power supply, treat that oven temperature naturally cools to room temperature.
Claims (1)
1. a ceramic cartridge photodetector Silica hydrogel dosing technology, is characterized in that: implement Silica hydrogel embedding to the photodetector of ceramic cartridge as follows:
1) in container, Silica hydrogel is prepared;
2) container filling Silica hydrogel is placed in confined space, dynamic adjustments is carried out to the air pressure in confined space, the air pressure in confined space is back and forth fluctuated between 0MPa and normal pressure, in operating process, Continuous Observation is carried out to Silica hydrogel, to be seen in Silica hydrogel during bubble-free, operation terminates;
3) Silica hydrogel is injected the ceramic cartridge inner chamber having mounted photoelectric detector chip, then leave standstill more than 2 hours;
4) photodetector is placed in confined space, dynamic adjustments is carried out to the air pressure in confined space, the air pressure in confined space is back and forth fluctuated between 0MPa and normal pressure, in operating process, Continuous Observation is carried out to Silica hydrogel, to be seen in Silica hydrogel during bubble-free, operation terminates;
5) photodetector is placed in baking oven, regulate oven temperature to 70C ° and be incubated 30 minutes, then regulate oven temperature to 100C ° and be incubated 30 minutes, then regulate oven temperature to 150C ° and be incubated 60 minutes, then close baking oven power supply, treat that oven temperature naturally cools to room temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510297152.7A CN105047727A (en) | 2015-06-03 | 2015-06-03 | Silica gel embedding technology for photoelectric detector with ceramic tube casing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510297152.7A CN105047727A (en) | 2015-06-03 | 2015-06-03 | Silica gel embedding technology for photoelectric detector with ceramic tube casing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105047727A true CN105047727A (en) | 2015-11-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510297152.7A Pending CN105047727A (en) | 2015-06-03 | 2015-06-03 | Silica gel embedding technology for photoelectric detector with ceramic tube casing |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105047727A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098914A (en) * | 2016-08-09 | 2016-11-09 | 杭州天之圣光电子有限公司 | A kind of LED glue package curing process |
| CN106378895A (en) * | 2016-11-24 | 2017-02-08 | 天津航空机电有限公司 | Filling method of cavity |
| CN106409695A (en) * | 2016-09-30 | 2017-02-15 | 西安微电子技术研究所 | Non-airtight encapsulating method of complex three-dimensional structure component |
| CN111863615A (en) * | 2020-07-28 | 2020-10-30 | 安徽大衍半导体科技有限公司 | Semiconductor packaging later-period curing method |
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| JP2001026073A (en) * | 1999-07-13 | 2001-01-30 | Inoac Corp | Waterproof sealing medium |
| EP2045285A1 (en) * | 2007-10-01 | 2009-04-08 | Doo Sung Industrial Co., Ltd. | Roll-type composite sheet having improved heat-releasing, electromagnetic wave-absorbing, and impact-absorbing properties, and method of manufacturing the same |
| CN101476920A (en) * | 2009-01-23 | 2009-07-08 | 扬州奥力威传感器有限公司 | Sealing technology of Hall fuel level sensor |
| CN102306989A (en) * | 2011-09-08 | 2012-01-04 | 中国航空工业第六一八研究所 | Bonding and potting method for aerial integrated motor |
| CN103372938A (en) * | 2012-04-11 | 2013-10-30 | 曾奕 | Preparation method for high-voltage element based on heat conduction of organic silicon rubber |
| CN103633528A (en) * | 2013-11-22 | 2014-03-12 | 北京机械设备研究所 | Potting process method for electric connector potting adhesive |
| CN104039087A (en) * | 2014-06-12 | 2014-09-10 | 北京华航无线电测量研究所 | Organic silica gel die-free encapsulation method for circuit board assembly |
-
2015
- 2015-06-03 CN CN201510297152.7A patent/CN105047727A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001026073A (en) * | 1999-07-13 | 2001-01-30 | Inoac Corp | Waterproof sealing medium |
| EP2045285A1 (en) * | 2007-10-01 | 2009-04-08 | Doo Sung Industrial Co., Ltd. | Roll-type composite sheet having improved heat-releasing, electromagnetic wave-absorbing, and impact-absorbing properties, and method of manufacturing the same |
| CN101476920A (en) * | 2009-01-23 | 2009-07-08 | 扬州奥力威传感器有限公司 | Sealing technology of Hall fuel level sensor |
| CN102306989A (en) * | 2011-09-08 | 2012-01-04 | 中国航空工业第六一八研究所 | Bonding and potting method for aerial integrated motor |
| CN103372938A (en) * | 2012-04-11 | 2013-10-30 | 曾奕 | Preparation method for high-voltage element based on heat conduction of organic silicon rubber |
| CN103633528A (en) * | 2013-11-22 | 2014-03-12 | 北京机械设备研究所 | Potting process method for electric connector potting adhesive |
| CN104039087A (en) * | 2014-06-12 | 2014-09-10 | 北京华航无线电测量研究所 | Organic silica gel die-free encapsulation method for circuit board assembly |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098914A (en) * | 2016-08-09 | 2016-11-09 | 杭州天之圣光电子有限公司 | A kind of LED glue package curing process |
| CN106409695A (en) * | 2016-09-30 | 2017-02-15 | 西安微电子技术研究所 | Non-airtight encapsulating method of complex three-dimensional structure component |
| CN106409695B (en) * | 2016-09-30 | 2018-12-11 | 西安微电子技术研究所 | A kind of non-hermetically sealed encapsulating method of complex three-dimensional construction package |
| CN106378895A (en) * | 2016-11-24 | 2017-02-08 | 天津航空机电有限公司 | Filling method of cavity |
| CN111863615A (en) * | 2020-07-28 | 2020-10-30 | 安徽大衍半导体科技有限公司 | Semiconductor packaging later-period curing method |
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Application publication date: 20151111 |