CN105047569A - Semiconductor packaging method - Google Patents

Semiconductor packaging method Download PDF

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Publication number
CN105047569A
CN105047569A CN201510374391.8A CN201510374391A CN105047569A CN 105047569 A CN105047569 A CN 105047569A CN 201510374391 A CN201510374391 A CN 201510374391A CN 105047569 A CN105047569 A CN 105047569A
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chip
metal framework
pin
sheet metal
bonding
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CN201510374391.8A
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CN105047569B (en
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石磊
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Nantong Fujitsu Microelectronics Co Ltd
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Nantong Fujitsu Microelectronics Co Ltd
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Abstract

The invention provides a semiconductor packaging method, and includes the steps of: manufacturing a metal frame with high pins, coating soldering flux or a die bonding adhesive on a carrier of the metal frame, adhering the reverse side of a chip to the carrier part of the metal frame, welding the gate level of the chip to a frame pin, taking a flat-plate-shaped metal sheet, coating a high-dielectric material under the metal sheet, and welding the metal sheet to a wafer region of the chip and another frame pin. Compared with the prior art, the semiconductor packaging method provided by the invention has the beneficial effect that the process realizes use of the metal sheet of the same size when the size of the chip is different, thereby reducing production cost. The chip and the pin are welded in a reverse wire bonding mode, the high-dielectric material is coated under the metal sheet, a welding method which combines bonding wire welding and metal sheet bridging is used, connection between the chip and the metal frame is relatively tight, the yield of products is improved, product reliability is guaranteed, performance requirements of high-power high-energy-consumption products are satisfied while the packaging yield of the products is improved and production cost is reduced.

Description

A kind of method for packaging semiconductor
Technical field
The present invention relates to a kind of method for packaging semiconductor, is specifically a kind of method for packaging semiconductor of bridge process.
Background technology
In the encapsulation process of semiconductor, solder technology core is welded by bonding wire or the technique of planting ball the gate pole of chip and circle district and metal framework, the connection of forming circuit.Particularly in the packaging part being applied to high-power product, the reliability of welding procedure and electric heating property are particularly important.Accompanying drawing 1 and to Figure 2 illustrate in prior art two kinds of traditional Type of Welding, wherein Fig. 1 is the schematic diagram of bonding wire welding encapsulation in prior art, and accompanying drawing 2 is plant the schematic diagram that ball bonding connects encapsulation in prior art, wherein 1 is metal framework, 3 is chips, and 4 is bonding wires, and 7 is plant ball.Traditional bonding wire welding and plant the realization of ball bonding connection technology to technique and have higher requirements, wherein, in the process of producing product of high-power, high energy consumption, the silk that collapses produced after bonding wire welding, fracture of wire, short circuit phenomenon are more, directly affect the reliability of product.Planting during ball bonding connects, due to the more difficult control of the form of planting ball, plant the rate of finished products that the factors such as the size of ball, height all directly can affect product, wherein, plant ball shape and cross conference and cause short circuit, the too small meeting of shape causes electrical contact bad.
In order to constantly adapt to the demand of market for high-power product, the performance requirement such as reliability, power of packaging part also needs to improve gradually, and the sheet metal bridged encapsulation technology of packaging part more seems particularly important.Sheet metal material is generally copper or aluminium, and top layer is furnished with circuit, connects the pin of chip and metal framework, the connection of forming circuit, and adopting sheet metal to replace bonding wire or planting the technology that ball bonding connects is bridge welding connection technology.Sheet metal bridged encapsulation technology is compared bonding wire welding and is planted ball bonding and connects high-power, the high energy consumption requirement that more can meet product.In addition, use sheet metal bridging technology more effectively can must reduce the thickness of product, reduce small product size, be applicable to the development trend that electronic product is less, thinner.
And existing sheet metal bridging technology, also there is certain defect.Such as, if each weldering gate pole of chip and circle district only use a sheet metal bridge joint, will cause chip power short circuit, chip functions lost efficacy.If use two sheet metal bridge joints, just need the two or more sheet metals making different size and size respectively, the gate pole in a sheet metal welding chip front and the first pin of framework, the round district in another sheet metal welding chip front and other pins of framework.And bridge joint in units of every product, welding procedure difficulty is comparatively large, and life cycle of the product is longer.If use the welding method that bonding wire welding and sheet metal bridge joint combine, because sheet metal position is above bonding wire, and the relative position of sheet metal and metal framework is fixed, and bonding wire is the fine rule having certain radian, the height of bonding wire must maintain a certain distance with sheet metal, and the line style of bonding wire and the more difficult control of camber, if touch with sheet metal, will cause short circuit, chip functions lost efficacy.As shown in Figure 3, Fig. 3 is traditional bonding wire welding procedure schematic diagram, and in traditional bonding wire welding procedure, a solder joint on chip is the first solder joint, and the b solder joint on metal framework is the second solder joint.Traditional welding procedure order be first weld a solder joint, then pulls out line segment and 1. bends afterwards, and 2. pull-out line segment bends afterwards, then pulls out line segment and 3. bend afterwards, welds b point.Bonding wire with the process of bending, is formed with the fairshaped bank shape of a peak in continuous bracing wire.In order to make bank have certain radian, often camber is very high for the camber line that traditional bonding wire welding procedure is formed, and in the operation of sheet metal bridge joint, bonding wire can contact with sheet metal and cause short circuit.And sheet metal must keep certain shape and angle when welding, as shown in Figure 4, Fig. 4 is traditional sheet metal bridge process profile, and 2 is scaling powders, and 6 is sheet metals.Shape due to sheet metal is special, also just needs to make certain moduli tool and makes sheet metal, also needs the shape and the height that control sheet metal, adds the cost of product, bring difficulty to the volume production of product.
In sum, traditional sheet metal bridging technology can not meet performance requirement that is high-power, high energy consumption product while raising product encapsulation yield, reduction production cost.
Summary of the invention
For overcoming the above-mentioned problems in the prior art, the invention provides a kind of method for packaging semiconductor, comprising the following steps: the metal framework making high pin; Chip back is bonding with described metal framework; Chip front side is connected with the first pin of described metal framework; Other pin bridge joints of sheet metal and chip and metal framework.
Preferably, high pin metal framework refers to that height of pin is greater than the metal framework of chip height, and metal framework material is the metals such as copper, aluminium, silver or alloy.
Further, in the step that described chip face is bonding with described metal framework, bonding way has brush scaling powder on chip metal framework to carry out Reflow Soldering again, and the brush bonding die glue mode such as to toast again is carried out bonding on metal framework.
Further, when chip front side is connected with the first pin of metal framework, adopt the technique of routing.Tradition routing technique be bonding wire by the pin of chip routing to metal framework, in the technique of falling routing of the present invention, bonding wire is from the pin routing of metal framework to chip.
Preferably, further comprising the steps of before the round district and other pin bridge joints of metal framework of sheet metal and chip front side: to make flat sheet metal, strong dielectric material is applied in the below (one side be namely connected with chip) of sheet metal, the position being coated with strong dielectric material is needed according to sheet metal, make the mould with figure, the opening on mould is the region needing to be coated with strong dielectric material.By die cover above sheet metal, then brush one deck strong dielectric material, namely form dielectric layer on sheet metal surface, the material of sheet metal is the metal such as copper, aluminium.
Further, in the step that sheet metal welds with the round district of chip front side and other pins of metal framework, brush one deck scaling powder on chip and above other pins of metal framework, then sheet metal cover on other pins of chip top and metal framework, then carry out Reflow Soldering, namely sheet metal, chip and metal framework form bridging structure.
Compared with prior art, the invention has the beneficial effects as follows: the present invention can bring following beneficial effect: the metal framework using high pin, coordinate with flat sheet metal, realize using the sheet metal of same size when chip size is different, save production cost, simplify production procedure.Chip and pin weld by falling the mode of routing, compared with traditional routing mode, effectively can reduce the camber of bonding wire, be coated with high dielectric material below sheet metal simultaneously, solve bonding wire welding to combine with sheet metal bridge joint the larger process difficulties of product height, after avoiding Product jointing, bonding wire and sheet metal touch the short circuit occurred, improve the yield of product, ensure the reliability of product, also reduce the technology difficulty of sheet metal bridge joint, the production cost reducing sheet metal and life cycle of the product further.Use the welding method that bonding wire welding and sheet metal bridge joint combine, connection between chip and metal framework is more tight, avoid bonding wire welding in the past or plant ball bonding and connect the open circuit and short-circuit conditions that cause, because the heat conduction of product after sheet metal bridge joint, conduction and reliability significantly improve, the present invention compares traditional routing and plants ball welding procedure, while raising product encapsulation yield, reduction production cost, meet performance requirement that is high-power, high energy consumption product.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of bonding wire welding encapsulation in prior art
Fig. 2 plants the schematic diagram that ball bonding connects encapsulation in prior art
Fig. 3 is traditional bonding wire welding procedure schematic diagram
Fig. 4 is traditional sheet metal bridge process profile
Fig. 5 is the metal framework of high pin
Fig. 6 is chip rear generalized section bonding with metal framework
Fig. 7 is generalized section after gate pole is connected with pin
Fig. 8 is independent pin bonding wire welding portion enlarged drawing in Fig. 4
The independent pin welding sequence figure of Fig. 9 welding procedure of falling routing
Figure 10 is the product profile after bonded metal sheet
Figure 11 is chip rear schematic diagram bonding with metal framework
Figure 12 is finished product profile
Embodiment
Below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
In the first execution mode of the present invention, provide a kind of method for packaging semiconductor.The method comprises the following steps:
Step 1: the metal framework making high pin.
Step 2: chip back is bonding with metal framework;
Step 3: chip is welded with metal framework;
Step 4: sheet metal and chip are justified district and metal framework pin bridge joint.
In above-mentioned steps 1, make the metal framework 1 of high pin, as shown in Figure 5, the height of pin of this metal framework 1 is apparently higher than the height of traditional pin, in the present embodiment, height of pin is greater than the thickness of chip, and metal framework 1 material is the metals such as copper, aluminium, silver or alloy.High pin metal framework 1 design of the present invention is not limited to the present embodiment.
In step 2 above, the back side of chip 3 is bonding with metal framework 1.As shown in Figure 6, Fig. 6 is chip 3 back side rear generalized section bonding with metal framework 1, and 1 is the metal framework that high pin designs, and 2 is scaling powders, and 3 is chips.Adhering chip 3 on metal framework 1, metal framework 1 is bonding by scaling powder 2 with the back side of chip 3.Particularly, first at metal framework 1 surface brush one deck scaling powder 2, be then placed on metal framework 1 by chip 3, through Reflow Soldering, chip 3 back side is namely bonding with metal framework 1.
In above-mentioned steps 3, the gate pole in chip 3 front is welded with the pin of metal framework 1.The nip of chip surface is divided into gate pole and circle district, and gate pole is power end, and circle district is other functional areas.In the present invention, bonding wire welding refers to that gate pole is welded with the first pin by bonding wire, and welding Zhi Yuan district of circle district is by sheet metal and other pin bridge joints.Fig. 7 is generalized section after gate pole welds with pin, and the gate pole (not shown) of chip 3 is welded with the first pin of metal framework 1 by bonding wire 4.In this step, as shown in Figure 8, Fig. 8 is independent pin bonding wire welding portion enlarged drawing in Fig. 7, and a solder joint is the gate pole of chip, and b solder joint is the solder joint on metal framework 1 pin.The present invention uses the technique of routing to be welded with b solder joint by a solder joint.In the present invention, adopt the mode of routing to weld bonding wire, as shown in Figure 9, Fig. 9 is the independent pin welding sequence figure of the welding procedure of falling routing, in the technique of falling routing, first weld b solder joint, then pull out line segment and 1. bend afterwards, 2. pull-out line segment bends afterwards, then pulls out line segment and 3. bend afterwards, then welds a solder joint.Adopt the technique of routing, compared with traditional routing mode, effectively can reduce the camber of bonding wire, solve bonding wire welding to combine with sheet metal bridge joint the larger process difficulties of product height, after avoiding Product jointing, bonding wire and sheet metal touch the short circuit occurred, the yield of raising product, ensure the reliability of product, also reduce the technology difficulty of sheet metal bridge joint further, ensure that carrying out smoothly of subsequent metal sheet bridge joint operation, the reliability of product is guaranteed.Those skilled in the art should know, and in actual production, the bank line style of bonding wire is not limited to the present embodiment, and the present embodiment is only described the welding sequence of bonding wire.
In above-mentioned steps 4, chip 3 is justified other pin bridge joints of district and metal framework 1.As shown in Figure 10, Figure 10 is the product profile after bonded metal sheet 6.5 is strong dielectric materials, and 6 is sheet metals.In this step, first below sheet metal, be coated with one deck strong dielectric material 5, then on the round district of chip 3 and other pins of metal framework 1, one deck scaling powder 2 is coated with, again sheet metal cover in the round district of chip 3 and other pins of metal framework 1, the placement location of sheet metal 6 is corresponding with the position of metal framework 1, on other pins covering described chip 3 front and described metal framework 1, do not cover the pin welded with the gate pole of crystal column surface.Carry out Reflow Soldering again, namely sheet metal completes bridge joint with chip 3 and metal framework 1.The connection of the common forming circuit of sheet metal 6, chip 3, bonding wire 4 and metal framework 1.
Carry out the plastic packaging of product subsequently, and the operation such as cutting, as Figure 12, Figure 12 is finished product schematic diagram.
In the second embodiment of the present invention, the first embodiment is improved.Particularly, in this embodiment, the bonding way of the first embodiment chips 3 and metal framework 1 is improved, in this embodiment, comprises the following steps:
Step 2-1: brush bonding die glue 7 on metal framework 1.
Step 2-2, chip 3 is bonding with metal framework 1.
Step 2-3, chip 3 rear baking bonding with metal framework.
In above-mentioned steps 2-1, brush bonding die glue 7 on metal framework 1.
In above-mentioned steps 2-2, by bonding with metal framework for chip 3.As shown in Figure 11, Figure 11 is chip rear schematic diagram bonding with metal framework, and 1 is the metal framework that high pin designs, and 7 is bonding die glue, and 3 is chips.Adhering chip 3 on metal framework 1, metal framework 1 is bonding by bonding die glue 7 with chip 3.
In above-mentioned steps 2-3, chip 3 rear baking bonding with metal framework.Chip 3 is placed on metal framework 1, then through overbaking, chip 3 back side is namely bonding by bonding die glue 7 with metal framework 1.
Compared with prior art, the invention has the beneficial effects as follows: the present invention can bring following beneficial effect: the metal framework using high pin, coordinate with flat sheet metal, realize using the sheet metal of same size when chip size is different, save production cost, simplify production procedure.Chip and pin weld by falling the mode of routing, compared with traditional routing mode, effectively can reduce the camber of bonding wire, be coated with high dielectric material below sheet metal simultaneously, solve bonding wire welding to combine with sheet metal bridge joint the larger process difficulties of product height, after avoiding Product jointing, bonding wire and sheet metal touch the short circuit occurred, improve the yield of product, ensure the reliability of product, also reduce the technology difficulty of sheet metal bridge joint, the production cost reducing sheet metal and life cycle of the product further.Use the welding method that bonding wire welding and sheet metal bridge joint combine, connection between chip and metal framework is more tight, avoid bonding wire welding in the past or plant ball bonding and connect the open circuit and short-circuit conditions that cause, because the heat conduction of product after sheet metal bridge joint, conduction and reliability significantly improve, the present invention compares traditional routing and plants ball welding procedure, while raising product encapsulation yield, reduction production cost, meet performance requirement that is high-power, high energy consumption product.
Above-mentioned explanation illustrate and describes the preferred embodiments of the present invention, as previously mentioned, be to be understood that the present invention is not limited to the form disclosed by this paper, should not regard the eliminating to other embodiments as, and can be used for other combinations various, amendment and environment, and can in invention contemplated scope described herein, changed by the technology of above-mentioned instruction or association area or knowledge.And the change that those skilled in the art carry out and change do not depart from the spirit and scope of the present invention, then all should in the protection range of claims of the present invention.

Claims (13)

1. a method for packaging semiconductor, comprises the following steps:
A) metal framework (1) of high pin is made;
B) described metal framework (1) is bonding with chip (3) back side;
C) gate pole of the pin of described metal framework (1) with described chip (3) front is welded;
D) by the round district in the pin of described metal framework (1) and chip (3) front and sheet metal (6) bridge joint.
2. method for packaging semiconductor as claimed in claim 1, is characterized in that, in the step making high pin metal framework (1), the height of pin of metal framework is greater than the thickness of chip.
3. method for packaging semiconductor as claimed in claim 1 or 2, it is characterized in that, in the step that described metal framework (1) is bonding with the back side of chip (3), bonding way is in described metal framework (1) surperficial prefluxing (2) Reflow Soldering again.
4. method for packaging semiconductor as claimed in claim 1 or 2, it is characterized in that, in the step that described metal framework (1) is bonding with chip (3) back side, bonding way is for toast at described metal framework (1) surface brush bonding die glue (7) again.
5. method for packaging semiconductor as claimed in claim 1 or 2, it is characterized in that, in the step that the first pin of described metal framework (1) welds with the gate pole in described chip (3) front, the pin of described metal framework (1) and the gate pole in chip (3) front are welded to fall the mode of routing by bonding wire (4).
6. method for packaging semiconductor as claimed in claim 5, it is characterized in that, before the step of other pins of described metal framework (1) and the round district in chip (3) front and sheet metal (6) bridge joint, be also included in: strong dielectric material (5) is set below sheet metal (6).
7. method for packaging semiconductor as claimed in claim 6, it is characterized in that, described sheet metal (6) material is the metal such as copper, aluminium.
8. method for packaging semiconductor as claimed in claim 7, it is characterized in that, the position that described sheet metal (6) is placed is corresponding with the position of metal framework (1), on the pin covering described chip (3) front and described metal framework (1).
9. method for packaging semiconductor as claimed in claim 1 or 2, it is characterized in that, in the step of the pin of described metal framework (1) and the round district in chip (3) front and sheet metal (6) bridge joint, by the round district in other pins of described metal framework (1) and chip (3) front and sheet metal (6) bridge joint.
10. method for packaging semiconductor as claimed in claim 9, it is characterized in that, in the step of the pin of described metal framework (1) and the round district in chip (3) front and sheet metal (6) bridge joint, the mode of other pins of described metal framework (1) and the round district in chip (3) front and sheet metal (6) bridge joint is, in other pins and described chip (3) front brush one deck scaling powder (2) of described metal framework (1), then carry out Reflow Soldering.
11. method for packaging semiconductor as claimed in claim 1, it is characterized in that, described metal framework (1) material is copper, aluminium, silver or alloy.
12. method for packaging semiconductor as claimed in claim 5, is characterized in that, the material of described bonding wire (4) is gold, copper or alloy.
13. method for packaging semiconductor as claimed in claim 1, is characterized in that, the material of described sheet metal (6) is copper, aluminium or alloy, and shape is tabular.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101651126A (en) * 2008-08-12 2010-02-17 三星电子株式会社 Chip packing part and manufacturing method thereof
CN102163580A (en) * 2011-03-15 2011-08-24 上海凯虹电子有限公司 Thin encapsulation body and manufacturing method thereof
US20140103510A1 (en) * 2012-10-17 2014-04-17 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
CN103811446A (en) * 2012-11-15 2014-05-21 万国半导体(开曼)股份有限公司 Copper wire bonding structure of semiconductor device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101651126A (en) * 2008-08-12 2010-02-17 三星电子株式会社 Chip packing part and manufacturing method thereof
CN102163580A (en) * 2011-03-15 2011-08-24 上海凯虹电子有限公司 Thin encapsulation body and manufacturing method thereof
US20140103510A1 (en) * 2012-10-17 2014-04-17 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
CN103811446A (en) * 2012-11-15 2014-05-21 万国半导体(开曼)股份有限公司 Copper wire bonding structure of semiconductor device and manufacturing method thereof

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