CN105044860B - A kind of PLC waveguide and the wafer processing technique of infrared accepter Vertical collection - Google Patents
A kind of PLC waveguide and the wafer processing technique of infrared accepter Vertical collection Download PDFInfo
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- CN105044860B CN105044860B CN201510353426.XA CN201510353426A CN105044860B CN 105044860 B CN105044860 B CN 105044860B CN 201510353426 A CN201510353426 A CN 201510353426A CN 105044860 B CN105044860 B CN 105044860B
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- groove
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- waveguide
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
Abstract
The invention discloses the wafer processing technique of a kind of PLC waveguide and infrared accepter Vertical collection, this technique is to process groove in PLC waveguide near the cover surface of outfan, deposits photoinduction layer at bottom portion of groove；Deposit protective layer at photoinduction layer and cover surface, and the protective layer at bottom portion of groove two ends respectively processes a groove；Deposit metal level at bottom portion of groove and protective layer again, and metal level is processed into electrode metal lead-in wire；At electrode metal lead-in wire and protective layer redeposition layer protective layer; and process connection jaws; what this technique achieved that the photoreceptors based on waveguide output end and germanium compound crystal is coupling on wafer is closely integrated; and waveguide core is vertical coupled with infrared light induction apparatus, it is easy to obtain and export from the peak signal electric current of optical inductor；This processing technique is simple, it is to avoid a large amount of labour forces consume, and production cost is low.
Description
Technical field
The present invention relates to the wafer processing technique of a kind of PLC waveguide and infrared accepter Vertical collection, belong to ripple
Lead device preparation field.
Background technology
Along with the application of PLC planar waveguide chip device is from wide area network to intercity net and the extension of access network, more
Carry out the most optical modules and need high integration to realize application module integrated with PLC chip and high-performance.
The least closeer index request may require that and realizes in some modules, these modules such as TOSA (light emission subgroup
Die-filling piece) and ROSA (die-filling piece of light-receiving subgroup).Past in the application module of wide area network, laser instrument,
Waveguide chip, optical receiver generally be separation assembly.In the prior art the optical device of separation is assembled into
Method together, reflects light to light sensitive diode up generally by an illuminator, and it is the most right to need
Standard and encapsulation technology.At present under the trend effect that 100G data network requires, insert in the intercity network equipment
Transmitting accept module and be required to be made less.Discrete device is fitted together and is difficult to meet telecom dealer to little chi
Very little requirement, and the method is also the processing method of a kind of costliness.Because module is by illuminator, photosensitive two poles
Pipe and waveguide device encapsulation form, and volume is difficult to reduce again.
Summary of the invention
Processing cost height, operation is there is again for optical module of the prior art and PLC chip integration module
Miscellaneous, and integration module device volume is big, it is impossible to adapt to existing application requirement, it is an object of the invention to be to provide
A kind of simple to operate, low cost, it is possible to achieve infrared light sensing device and the crystalline substance being closely integrated of PLC waveguide
Circle processing technique.
In order to realize the technical purpose of the present invention, the invention provides a kind of PLC waveguide and hang down with infrared accepter
The most integrated wafer processing technique, comprises the following steps:
(1) just it is being positioned at waveguide core in PLC waveguide near cover surface processing the groove I, groove I of outfan
Top；
(2) at groove I bottom deposit photoinduction layer；
(3) protective layer I, and the protective layer at two ends bottom groove I are deposited at photoinduction layer and cover surface
I surface respectively processes a groove II；
(4) bottom groove II and protective layer I surface deposition metal level, and metal level is processed into electrode gold
Belong to lead-in wire；
(5) at electrode metal lead-in wire and protective layer I surface deposition protective layer II, and connection jaws is processed.
Technical scheme processes groove by being positioned at directly over waveguide core at waveguide output end cover layer, and
Deposit Germanium compound crystal photoinduction layer, it is achieved the photoreceptors based on germanium compound crystal and waveguide is vertical coupled, tightens at wafer
Intensive one-tenth, has the advantages that volume is little, can be arrayed waveguide gratings with ROSA (die-filling piece of light-receiving subgroup)
On application provide convenient and easy and simple to handle, it is to avoid prior art consumes in the packaging technology of rear end big
Amount labour force (the such as coupling centering of the single optical device in packaging technology).
The wafer processing technique of the PLC waveguide of the present invention and infrared accepter Vertical collection also include following preferably
Scheme:
Preferably in scheme, PLC waveguide substrate thickness is 15～20 microns, and overburden cover is 15～20 microns,
Waveguide core width is 5～8 microns, and thickness is 5～7 microns.
Preferably in scheme, PLC waveguide has at least 8 output channels (i.e. waveguide core number).Can have
8,16,40,100 or more output channel.
Bottom preferred scheme further groove I, the vertical dimension with waveguide core is 1～2 micron.Pass through adjusting grooves
The degree of depth of I can control the vertical coupled distance of photoinduction layer and waveguide, is conducive to obtaining best optical signal defeated
Go out effect.
Preferably parallel with waveguide bottom scheme further groove I, groove I bottom width is 25～35 microns, length
It it is 100～150 microns.By the length of the groove I that regulation is processed, photoinduction layer can be controlled parallel along waveguide
The length in direction is in 100～150 micrometer ranges.Groove I is most preferably inverted trapezoidal shape groove.
Preferably in scheme, photoinduction layer thickness is 0.1～1 micron.
Preferably in scheme, photoinduction layer is made up of infra-red sensitive material germanium compound crystal.The present invention passes through highly purified germanium
Compound crystal processes low pressure chemical vapor deposition, and the photoinduction layer bandwidth energy that germanium compound crystal makes is less than 0.77 electron-volt.
Preferably in scheme, protective layer I thickness is 0.5～1 micron.
Preferably in scheme, protective layer II thickness is 0.5～1 micron.
More preferably in scheme, protective layer I and protective layer II is each independently selected from SiO2Or SiN material.
Preferably in scheme, metal level is made up of aluminum.
More preferably in scheme, metal layer thickness is 2000～2500 angstroms.
Preferably for the photoinduction layer exposed bottom scheme further groove II.Metal level is deposited directly to photoinduction layer
On, it is reprocessed into the plain conductor of photoinduction layer.
Preferably scheme is added in PLC waveguide by photoetching process and dry corrosion method on the cover layer of outfan
Work groove I.
Preferably scheme is respectively processed by photoetching and etching process protective layer I surface, two ends bottom groove I
One groove II.
By photoetching and etching process processing connection jaws in the solution of the present invention, in order to realize COG or SOG
I.e. chip encapsulates with the laminating of glass.
One groove I of each processing directly over each Luciola substriata core in the solution of the present invention, and process infrared photosensitive material
Material germanium compound crystal, as optical inductor, so monitors the light intensity of transmission in waveguide.
The present invention can regulate infra-red sensitive material germanium compound crystal and the vertical coupled distance of waveguide core and and light sensation
Answer the length of device to obtain the Best Coupling effect of waveguide core and optical inductor, thus obtain the maximum of optical inductor
Signal code exports, and is to export in a digital manner by amplifying with the last signal of array analog digital conversion, such as Fig. 2 (figure
Middle L represents that length, d represent height) shown in.
Beneficial effects of the present invention: the method for the present invention by waveguide and infrared light induction apparatus process at same crystalline substance
Achieve on circle that the photoreceptors based on waveguide output end and germanium compound crystal is coupling on wafer is closely integrated, and ripple
Lead core vertical coupled with infrared light induction apparatus, it is easy to obtain and export from the peak signal electric current of optical inductor.This
Bright waveguide and infrared light induction apparatus are closely integrated, and volume is little, can be arrayed waveguide gratings with ROSA (light
Receive die-filling piece of subgroup) on application provide convenient.The processing technique of the present invention is simple, it is to avoid a large amount of labour forces
Consuming, production cost is low.
Accompanying drawing explanation
[Fig. 1] is the process chart of the present invention；
[Fig. 2] is the complete framework signal of the PLC waveguide prepared of the present invention and infrared accepter Vertical collection device
Figure；
[Fig. 3] is to comprise PLC waveguide and the light of infrared accepter Vertical collection device waveguide device prepared by the present invention
Turn electricity circuit diagram；
Wherein, 1 is substrate layer, and 2 is waveguide core, 3 cover layers, and 4 is groove I, and 5 is photoinduction layer, and 6 is protection
Layer I, 7 is groove II, and 8 go between for electrode metal, and 9 is protective layer II, and 10 is PCL waveguide, and 11 is defeated
Going out device, 12 is AMP.
Detailed description of the invention
Following example are intended to further illustrate present invention rather than limit the protection of the claims in the present invention
Scope.
Embodiment 1
Raw material: PLC wafer；Raw material is for deposited substrate layer, waveguide core layer and cover layer in substrate
PLC wafer (as shown in a in Fig. 1)；Substrate thickness is about 18 microns, and overburden cover is about 19 microns,
Waveguide core width is about 6 microns, and thickness is about 6 microns.PLC wafer has 16 output channels.
(1) inverted trapezoidal groove is etched on the cover layer (such as Fig. 1 by photo-etching processes and dry etching
Shown in middle b), the degree of depth of groove is about 12 microns, and bottom portion of groove width about 30 microns, length is about 120
Micron, in waveguide core layer, remaining overburden cover is about 1 micron..Photo-etching processes includes paving photoetching
Glue and exposure transfer to cover layer by dry etching figure again with development forms figure.
(2) at inverted trapezoidal groove bottom deposit photoinduction layer (polycrystal germanium), thickness about 0.6 micron, width
Basically identical with bottom portion of groove with length.Figure is formed (such as c in Fig. 1 by photo-etching processes and dry etching
Shown in).
(3) depositing layer protective layer in cover surface (including groove surfaces), thickness is about 0.6 micron,
Material is silicon dioxide, then passes through photo-etching processes and be dry-etched on the two ends protective layer bottom trapezoidal groove
Etched recesses (as shown in d in Fig. 1), the Pocket Machining degree of depth is until exposing photoinduction layer.
(4) depositing one layer of aluminum at protective layer and work as electric shock plain conductor, thickness is about 2200 angstroms, by light
Etching technics forms figure (shown in e in such as Fig. 1) with dry etching.
(5) at deposition layer protective layer on aluminium lamination, thickness is about 0.6 micron, and material is silicon dioxide；
Breach is exposed on the protection layer to facilitate external electrode (such as f institute in Fig. 1 with dry etching by photo-etching processes
State).
Integrated products is as in figure 2 it is shown, as can be seen from Figure 2 waveguide and infrared light induction apparatus process are same
Achieve on one wafer that the photoreceptors based on waveguide output end and germanium compound crystal is coupling on wafer is closely integrated,
And waveguide core is vertical coupled with infrared light induction apparatus.
Claims (13)
1. the wafer processing technique of a PLC waveguide and infrared accepter Vertical collection, it is characterised in that include with
Lower step:
(1) it is positioned at waveguide core in PLC waveguide near cover surface processing the groove I, groove I of outfan
Surface；
(2) at groove I bottom deposit photoinduction layer；
(3) protective layer I, and the protective layer at two ends bottom groove I are deposited at photoinduction layer and cover surface
I surface respectively processes a groove II；
(4) bottom groove II and protective layer I surface deposition metal level, and metal level is processed into electrode gold
Belong to lead-in wire；
(5) at electrode metal lead-in wire and protective layer I surface deposition protective layer II, and connection jaws is processed.
Technique the most according to claim 1, it is characterised in that described PLC waveguide substrate thickness is 15～20
Micron, overburden cover is 15～20 microns, and waveguide core width is 5～8 microns, and thickness is 5～7 microns.
Technique the most according to claim 1, it is characterised in that described PLC waveguide have at least 8 defeated
Go out passage.
Technique the most according to claim 1, it is characterised in that bottom described groove I with waveguide core hang down
Straight distance is 1～2 micron.
Technique the most according to claim 1, it is characterised in that put down with PLC waveguide bottom described groove I
OK, groove I bottom width is 25～35 microns, a length of 100～150 microns.
Technique the most according to claim 1, it is characterised in that described photoinduction layer thickness is 0.1～1 micro-
Rice.
7. according to the technique described in claim 1 or 6, it is characterised in that described photoinduction layer is by infrared photosensitive
Material germanium compound crystal is constituted.
Technique the most according to claim 1, it is characterised in that described protective layer I thickness is 0.5～1 micro-
Rice.
Technique the most according to claim 1, it is characterised in that described protective layer II thickness is 0.5～1 micro-
Rice.
10. according to the technique described in claim 1,8 or 9, it is characterised in that described protective layer I and protection
Layer II is independently selected from SiO2Or SiN material.
11. techniques according to claim 1, it is characterised in that described metal level is made up of aluminum.
12. according to the technique described in claim 1 or 11, it is characterised in that described metal layer thickness is
2000～2500 angstroms.
13. techniques according to claim 1, it is characterised in that for the light exposed bottom described groove II
Inductive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510353426.XA CN105044860B (en) | 2015-06-24 | 2015-06-24 | A kind of PLC waveguide and the wafer processing technique of infrared accepter Vertical collection |
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|---|---|---|---|
| CN201510353426.XA CN105044860B (en) | 2015-06-24 | 2015-06-24 | A kind of PLC waveguide and the wafer processing technique of infrared accepter Vertical collection |
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| CN105044860A CN105044860A (en) | 2015-11-11 |
| CN105044860B true CN105044860B (en) | 2016-08-24 |
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Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0697187A (en) * | 1992-09-14 | 1994-04-08 | Hitachi Ltd | Semiconductor device and manufacture thereof |
| EP0617303A1 (en) * | 1993-03-19 | 1994-09-28 | Akzo Nobel N.V. | A method of integrating a semiconductor component with a polymeric optical waveguide component, and an electro-optical device comprising an integrated structure so attainable |
| US6945708B2 (en) * | 2003-02-18 | 2005-09-20 | Jds Uniphase Corporation | Planar lightwave circuit package |
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