CN105008879B - Capacitance type pressure sensor and input unit - Google Patents
Capacitance type pressure sensor and input unit Download PDFInfo
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- CN105008879B CN105008879B CN201380074227.4A CN201380074227A CN105008879B CN 105008879 B CN105008879 B CN 105008879B CN 201380074227 A CN201380074227 A CN 201380074227A CN 105008879 B CN105008879 B CN 105008879B
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- pressure sensor
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- capacitance type
- type pressure
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0447—Position sensing using the local deformation of sensor cells
Abstract
Dielectric layer (33) is formed in the upper surface of fixed electrode (32).By making the upper table of dielectric layer (33) be recessed downwards, so as to form groove (33a) in the upper surface of dielectric layer (33).The bottom surface of groove (33a) is covered by dielectric layer (33).In the stacked on substrate of superficial layer (35a) of dielectric layer (33) to cover groove (33a).By upper substrate (35a) part, the i.e. region positioned at the top of groove (33a), to form the electrically conductive diaphragm (35) in film-form.In the upper face center portion of diaphragm (35), projection (39) is set.
Description
Technical field
The present invention relates to capacitance type pressure sensor and input unit.Specifically, the present invention relates to because of pressure
And the diaphragm (diaphragm) bent contacts the capacitance type pressure sensing for the contact for carrying out detection pressure with dielectric layer
Device.In addition, relating to the use of the input unit of the pressure sensor.
Background technology
In general capacitance type pressure sensor, the diaphragm (movable electrode) and fixed electrode of electric conductivity across
Gap carries out opposed, and detects pressure according to the change of the electrostatic capacitance between the diaphragm and fixed electrode bent by pressure.
It is the feelings of the micro element manufactured using glass substrate or silicon substrate by MEMS (MEMS) technology in the pressure sensor
Under condition, if applying big pressure to diaphragm and occurring larger flexure, there is the risk of destruction diaphragm.
So, it is proposed that following pressure sensor：Dielectric layer is set on the surface of fixed electrode, bent because of pressure
Diaphragm contacted with dielectric layer, the change based on its contact area, the electrostatic capacitance between diaphragm and fixed electrode becomes
Change.The pressure sensor is otherwise referred to as contact-type electrostatic capacitance type pressure sensor.
It is used as contact-type electrostatic capacitance type pressure sensor, such as sensor on the books in non-patent literature 1.Fig. 1
(A) be the profile for representing the pressure sensor 11 described in non-patent literature 1.In the pressure sensor 11, in glass
The upper surface of substrate 12 forms the fixed electrode 13 being made up of metallic film, in glass substrate 12 from fixed electrode 13
Upper surface is formed with dielectric film 14.In the upper surface of dielectric film 14, electrode pad (pad) 16 is provided with.In dielectric film
14 are open to form through hole 15, and electrode pad 16 is connected by through hole 15 with fixed electrode 13.In dielectric film 14
Upper surface layer be laminated with silicon substrate 17.Depressed part 18 is set in the upper surface of silicon substrate 17, and set in the lower surface of silicon substrate 17
Groove 19 is put, so as to be formed with the diaphragm 20 of film-form between depressed part 18 and groove 19.Diaphragm 20 is arranged on and fixed electricity
The overlapping position in pole 13.The lower surface of silicon substrate 17 turns into the P for being doped with high concentration B (boron)+Layer 21, is thus assigned to diaphragm 20
Electric conductivity simultaneously regard diaphragm 20 as movable electrode.Between the lower surface of diaphragm 20 and the upper surface of dielectric film 14, pass through
Groove 19 and generate several μm of gap 22.
Figure 1B is the figure of the relation (pressure-capacitance characteristic) for the pressure and electrostatic capacitance for representing pressure sensor 11, is recorded
In non-patent literature 1.If applying pressure to the diaphragm 20 of pressure sensor 11, diaphragm 20 is scratched in response to the application pressure
Song, is contacted with dielectric film 14 under a certain pressure.On Figure 1B transverse axis, pressure is 0 to Pa interval (not in contact with region)
It is region of the diaphragm 20 not in contact with dielectric film 14.Pressure is from diaphragm 20 and electricity for Pa to Pb interval (beginning contact area)
Deielectric-coating 14 has been contacted to the region untill a certain degree of area is reliably contacted with dielectric film 14.Pressure be Pb extremely
Pc interval (operating space), with the increase of pressure, the area for the part that diaphragm 20 is contacted with dielectric film 14 gradually increases.
Pressure be Pc to Pd interval (zone of saturation), even if be diaphragm 20 almost whole face contacted with dielectric film 14 and pressure increasing
Plus and contact area also hardly increased region.
According to Figure 1B pressure-capacitance characteristic, in pressure increase, diaphragm 20 do not come in contact not in contact with region,
The change of electrostatic capacitance is small, but once enters beginning contact area, then the rate of change (gathering way) of electrostatic capacitance becomes larger.
In operating space, although linearly improve, but the rate of change of electrostatic capacitance is gradually decreased, if into zone of saturation, electrostatic capacitance
Almost no longer increase.
In the pressure sensor 11 of the contact, electrostatic capacitance C between diaphragm 20 and dielectric film 14 can according to
Under numerical expression 1 represent.
C=Co+ ε (S/d) ... (numerical expression 1)
Wherein, the contact area of diaphragm 20 and dielectric film 14 is set to S, the thickness of dielectric film 14 is set to d, and with
ε characterizes the dielectric constant of dielectric film 14.Co is not in contact with the electrostatic capacitance in region.When pressure becomes big, dielectric film
14 thickness d and permittivity ε does not change, the contact area S increases of diaphragm 20, therefore it can be seen from numerical expression 1, now pressure is passed
The electrostatic capacitance C increases of sensor 11.
But, the problem of pressure sensor 11 has following such.In pressure sensor 11, carried out according to diaphragm 20
Front end geometry of the pressing body of pressing etc., area when diaphragm 20 starts to contact with dielectric film 14 is different.As a result, pressure
Characteristic (following, the title of the rising part (starting among contact area and operating space close to Pb region) of power-capacitance characteristic
For rising characteristic.) changed according to the front end geometry of pressing body 23.For example, as shown in Fig. 2 (A), being pressed so that front end face is small
In the case that laminate 23 presses pressuring film plate 20, contact area when diaphragm 20 starts to contact with dielectric film 14 is small.On the other hand, such as
Shown in Fig. 2 (B), in the case where the pressing body 23 big with front end face presses pressuring film plate 20, even identical pressing force P, film
Contact area when piece 20 starts to contact with dielectric film 14 also becomes big.As a result, the rising characteristic root of pressure-capacitance characteristic
Change according to the shape or size of pressing body 23, there is the measurement accuracy in the lower pressure region that can not ensure pressure sensor 11
So the problem of.
Then, as shown in Fig. 2 (C), diaphragm 20 is pressed the situation of the pressing of body 23 on the position away from its central portion
Under, even shown in identical pressure P, such as Fig. 2 (A), electrostatic capacitance is also different from the situation that central portion is pressed sometimes.Therefore
And, the position being pressed based on diaphragm 20, the measured value of pressure sensor 11 is changed, and the deviation of pressing position turns into pressure
The reason for measurement accuracy of sensor 11 declines.
Prior art literature
Non-patent literature
Non-patent literature 1:Yamamoto is quick, other 4, " contact capacitance type pressure sensor ", rattan storehouse skill report, Co., Ltd.
Teng Cang, in October, 2001, No. 101, p.71-74
The content of the invention
The invention problem to be solved
The present invention in view of technical background as described above and propose, its object is to there is provided can reduce pressing body size,
The influence that shape or pressing position are brought is so that the capacitance type pressure for the contact that measurement accuracy is improved is passed
Sensor.
Means for solving the problems
Capacitance type pressure sensor involved in the present invention possesses：Fixed electrode；Dielectric layer, it is formed at described
The top of fixed electrode；The diaphragm of electric conductivity, it is formed at the top of the dielectric layer across space；And one or more
Projection, it is arranged at the upper surface of the diaphragm.
The present invention capacitance type pressure sensor there is projection in the upper surface of diaphragm, if therefore with pressing body come by
Pressuring film plate, then based on projection, diaphragm is urged towards dielectric layer.Therefore, in pressure applied hour, the size with pressing body
Or shape is unrelated, diaphragm is deformed with pressure with certain shape.So, the deviation of the rising characteristic of pressure sensor becomes
Small, the output characteristics of pressure sensor is improved.In addition, there occurs the situation of a little deviation even in the position that pressing body is pressed
Under, also based on the projection for the fixed position for being arranged at diaphragm, diaphragm is pressed, therefore caused by reducing the deviation of pressing position
The deviation of output, can especially be improved rising characteristic.
In the case where covering the surface of the diaphragm with diaphragm, the projection can be by identical with the diaphragm
Material formed.By the way that diaphragm and projection are set into same material, diaphragm and projection can be made with 1 process, because
This manufacturing process becomes simple.In addition, the projection can by with the diaphragm identical material come with the diaphragm one
Formed.In the case, can be by being processed to form projection to diaphragm.
In one embodiment of capacitance type pressure sensor involved in the present invention, the projection is arranged at described
The upper face center portion of diaphragm.It is the central portion that projection is arranged to diaphragm according to the embodiment, therefore based on pressing force,
Diaphragm is equably deformed, so as to be not susceptible to plastic deformation in diaphragm.
In another embodiment of capacitance type pressure sensor involved in the present invention, the height of the projection is institute
State below the height in space.If the height of projection is set to below the height in space, when by pressuring film plate, pressing body be difficult by
Projection is hindered.As a result, the linear of the output of pressure sensor is improved.
In the yet another aspect of capacitance type pressure sensor involved in the present invention, the width of the projection is institute
State the width of diaphragm less than 0.2 times.In addition, in the embodiment, the width of preferably described projection is the width of the diaphragm
Less than 0.15 times of degree.According to the embodiment, being provided with the output characteristics of the pressure sensor of projection becomes good.
In the yet another aspect of capacitance type pressure sensor involved in the present invention, from vertical with the diaphragm
Direction is observed, and ventilation path is provided with relative to 2 mutually orthogonal virtual lines position respectively symmetrically.According to the reality
Apply form, when by pressuring film plate, uniform stress produced in diaphragm, so as to prevent big stress produced by office and in diaphragm
It is plastically deformed.In addition, in the embodiment, the ventilation path can be with flexing or bending.If making ventilation path flexing
Or bend, then foreign matter is difficult to invade sensor internal from ventilation path.
Input unit involved in the present invention is that capacitance type pressure sensor involved in the present invention is arranged into multiple
.According to the input unit, the influence such as size, deviation of pressing position of pressing body can be reduced, energy precision is examined well
Survey pressing position and pressing force.
In addition, the means that being used in the present invention solves the problem have inscape described above progress suitably
Feature obtained from combination, the present invention can carry out the various deformation of the combination based on inscape.
Brief description of the drawings
Fig. 1 (A) is the summary section for the pressure sensor for representing conventional example.Figure 1B is represented shown in Fig. 1 (A)
The figure of the relation of pressure and electrostatic capacitance in the pressure sensor of conventional example.
Fig. 2 (A) is to represent that the diaphragm and dielectric layer that are pressed by small pressing body start the skeleton diagram of the state contacted.
Fig. 2 (B) is to represent that the diaphragm and dielectric layer that are pressed by big pressing body start the skeleton diagram of the state contacted.Fig. 2 (C)
It is the skeleton diagram for representing the state that the position upper diaphragm in remote central portion is pressed.
Fig. 3 is the top view for the pressure sensor for representing embodiments of the present invention 1.
Fig. 4 is the profile of the pressure sensor shown in Fig. 3.
Fig. 5 (A) is the outline of state when representing to press the diaphragm of the pressure sensor shown in Fig. 3 with small pressing body
Figure.Fig. 5 (B) is the skeleton diagram of state when representing to press the diaphragm of the pressure sensor shown in Fig. 3 with big pressing body.
Fig. 6 (A) is state when representing to press the center of the diaphragm of the pressure sensor shown in Fig. 3 with pressing body
Skeleton diagram.Fig. 6 (B) is the central position for representing to press the diaphragm away from the pressure sensor shown in Fig. 3 with pressing body
When state skeleton diagram.
Fig. 7 (A) is the general of state when representing to apply diaphragm of the big load to press the pressure sensor shown in Fig. 3
Sketch map.Fig. 7 (B) be represent projection height be more than air gap height in the case of comparative example skeleton diagram.
Fig. 8 is to represent, for the different multiple samples (including unpolarized sample) of the height of projection, to ask by simulating
Go out the figure of the result of the relation of the variable quantity of the exacerbation applied to projection and electrostatic capacitance.
Fig. 9 is to represent, for the different multiple samples (including unpolarized sample) of the diameter of projection, to ask by simulating
Go out the figure of the result of the relation of the variable quantity of the exacerbation applied to projection and electrostatic capacitance.
Figure 10 (A), Figure 10 (B) and Figure 10 (C) are the figures for the configuration for representing vent line.
Figure 11 is the pressure of the upper surface electrode with different shapes for the variation for representing embodiments of the present invention 1
The top view of sensor.
Figure 12 is the top view of the pressure sensor of another variation of embodiments of the present invention 1.
Figure 13 is the profile of the input unit of embodiments of the present invention 2.
The explanation of reference
31 pressure sensors
32 fixed electrodes
33 dielectric layers
34 air gaps
35 diaphragms
36 vent lines
37 upper surface electrodes
39 projections
40 electrode pads
41 diaphragms
45 pressing bodies
51 input units
Embodiment
Hereinafter, it is explained with reference to the preferred embodiment of the present invention.But the invention is not restricted to following embodiment,
Various design alterations can be carried out without departing from the spirit and scope of the invention.
(embodiment 1)
Reference picture 3 and Fig. 4 illustrate the construction of the pressure sensor 31 of embodiments of the present invention 1.Fig. 3 is that pressure is passed
The top view of sensor 31, Fig. 4 is the profile of pressure sensor 31.
In pressure sensor 31, in the fixed electrode 32 being made up of the conductive material of low-resistance silicon substrate, metal film etc.
On be formed with dielectric layer 33.Dielectric layer 33 is by SiO2The dielectric substance such as (heat oxide film), SiN, TEOS is constituted.In electricity
The upper surface of dielectric layer 33, recessed fluted 33a (recess).On dielectric layer 33, it is formed with by low-resistance silicon substrate etc.
Conductive material constitute film-form upper substrate 35a.Upper substrate 35a covering grooves 33a upper surface, by groove 33a,
Air gap 34 (space) is formed between upper substrate 35a lower surface and the groove floor of dielectric layer 33.In this way, passing through upper base
The region that the plate 35a upper horizontal in air gap 34 extends, is formed with the diaphragm 35 of pressure-sensitive.In dielectric layer 33, in order to true
The aeration protected between air gap 34 and outside, is formed with vent line 36 (ventilation path).Vent line 36 is that width is 30 μm
The narrow slot of left and right, and flexing or sinuous so that the foreign matter such as dust or dust is difficult in intrusion air gap 34 (reference picture 10).
In upper substrate 35a upper surface, in the way of surrounding diaphragm 35, the upper surface electricity of the ring-type of metal material is provided with
Pole 37.Upper substrate 35a corner part is provided with electrode pad 40, and upper surface electrode 37 is connected with electrode pad 40 by wiring portion 42
Connect.Upper surface electrode 37, wiring portion 42 and electrode pad 40 are by basalis Ti (thickness)/superficial layer Au (thickness) double layer of metal film simultaneously make.In addition, the lower surface in fixed electrode 32 is provided with lower surface electrode 38.
Lower surface electrode 38 is also by basalis Ti (thickness)/superficial layer Au (thickness) double layer of metal film
Come what is made.
Among upper substrate 35a upper surface than the more lateral of upper surface electrode 37 region by the resin by polyimides etc. or
SiO2, the diaphragm 41 that SiN etc. dielectric film is constituted covers.But, diaphragm 41 is eliminated in the vicinity of electrode pad 40, electricity
Pole pad 40 exposes from diaphragm 41.
In the upper face center portion of diaphragm 35, less projection 39 is provided with.In illustrated example, projection 39 is drawn into circle
Column is but it is also possible to be corner column or any shape such as unsetting.The size of projection is for example relative to Ro=500 μm of radius
Diaphragm 35, radius R is 25 μm, height H be 1 μm (on the scope of optimum size, will be aftermentioned.).Projection 39 both can by with
The identical material of diaphragm 41 to make simultaneously with diaphragm 41, can also be by being made with the identical material of diaphragm 35.
The upper surface of diaphragm 35 is provided with projection 39 if so, then can be unrelated with the front end geometry or size of pressing body
Ground, according to the size of load, makes diaphragm 35 be contacted with dielectric layer 33 with stable contact area.Fig. 5 (A) is shown with front end
The less pressing body 45 in face carrys out the situation by pressuring film plate 35 such as the finger tip of child.Fig. 5 (B) shows larger with front end face
Pressing body 45 carrys out the situation by pressuring film plate 35 such as the finger tip of adult.If being provided with projection 39 in the upper surface of diaphragm 35,
When pressing body 45 presses pressuring film plate 35, diaphragm 35 can be urged towards dielectric layer 33 because of projection 39.So, such as Fig. 5 (A) with
And shown in Fig. 5 (B), when diaphragm 35 starts to contact with dielectric layer 33, the front end geometry or size with pressing body 45 are unrelated,
Start to contact with dielectric layer 33 with identical contact area.As a result, in pressure-capacitance characteristic of pressure sensor 31
The size that rising characteristic becomes to be difficult to be pressed body influences, and rising characteristic is stable.
If in addition, being provided with projection 39 in the upper surface of diaphragm 35, following effect will be obtained.That is, either such as Fig. 6
(A) shown in when pressing body 45 presses the central portion of pressuring film plate 35, or to the center away from diaphragm 35 as shown in Fig. 6 (B)
Position when being pressed, if the size of the load applied to diaphragm 35 is identical, diaphragm 35 in an identical manner with dielectric
Layer 33 is contacted.So, even if deviateing by the position of pressuring film plate 35, pressure can be also detected exactly, pressure sensor 31
Measurement accuracy is improved.And then, because diaphragm 35 is strengthened by projection 39, therefore diaphragm 35 becomes to be not susceptible to plastic deformation.
If further applying big load since the state that diaphragm 35 is contacted with dielectric layer 33, such as Fig. 7 (A)
Shown, diaphragm 35 is pressed the directly pressing of body 45, as load becomes big, the contact area increase of diaphragm 35 and dielectric layer 33.
Therefore, in operating space, as load becomes big, the electrostatic capacitance between diaphragm 35 and fixed electrode 32 gradually increases, and can measure
Big pressure.
But, such as shown in Fig. 7 (B), if the height H of projection 39 is more than the height G of air gap 34, even if with pressing body 45
To apply big load, pressing body 45 can also be hindered by projection 39 and become unable to by pressuring film plate 35.It is therefore preferable that projection 39
Highly it is equal to the height G or the height G less than air gap 34 of air gap 34.
Fig. 8 show protrusion diameter (the radius R of projection) is remained it is constant on the premise of make the height change of projection, lead to
Cross the pass for simulating and calculating the variation delta C of the electrostatic capacitance between the load F applied by pressing body and diaphragm-fixed electrode
The result of system.The model that the simulation is used is that the thickness of diaphragm is 10 μm, and the radius Ro of diaphragm is 500 μm, and the height G of air gap is
1 μm, the radius R of projection is 25 μm of pressure sensor.In the model, the height H of projection is made according to 0.50 μm of (H/G=
0.50), 0.75 μm (H/G=0.75), 1.0 μm (H/G=1.0), 2.0 μm (H/G=2.0), 5.0 μm (H/G=5.0) change,
To obtain load F and the relation of output (electrostatic capacitance change amount Δ C).In fig. 8, for being not provided with the model of projection in diaphragm
It is also shown for load and the relation of output.
According to the analog result, as it can be observed in the picture that in the case where being not provided with projection, in the small region of load, under output
Drop, output it is linear poor.In the case where the height of projection and the ratio between the height H/G in gap are 5.0, pressing body is hampered by projection
Hinder, if therefore load become it is big some increment rate of output and output diminishes, output it is linear or poor.Equally, in projection
In the case that height is 2.0 with the ratio between the height in gap H/G, load is hindered by projection, and output diminishes.On the other hand, with
In models of the H/G for less than 1 projection, linear very good output will be obtained.It is therefore desirable to which projection is configured to meet prominent
The ratio between height H and the height G in gap for rising are H/G≤1.
Fig. 9 show the height of projection is remained it is constant on the premise of change protrusion diameter, calculated by simulation
The result of the variation delta C of the electrostatic capacitance gone out between the load F applied by pressing body and diaphragm-fixed electrode relation.The mould
The model for intending using is that the thickness of diaphragm is 10 μm, and the radius Ro of diaphragm is 500 μm, and the height G of air gap is 1 μm, the height of projection
Spend the pressure sensor that H is 1 μm.In the model, protrusion diameter R is made according to 25 μm (R/Ro=0.05), 32.5 μm of (R/Ro=
0.065), 37.5 μm (R/Ro=0.075), 50 μm (R/Ro=0.1), 75 μm (R/Ro=0.15), 100 μm (R/Ro=0.2)
Change, to obtain load F and the relation of output (electrostatic capacitance change amount Δ C).In fig .9, for being not provided with projection in diaphragm
Model be also shown for load with output relation.
It is equally, as can be seen from Figure 9, defeated in the small region of load in the case where being not provided with projection according to the analog result
Go out decline, output it is linear poor.In contrast, if the projection for setting R/Ro to be less than 0.2, what is exported linearly obtains changing greatly very much
It is kind.In the case where R/Ro is 0.2, in the big region of load, the increment rate of output diminishes, and output also diminishes, and is in R/Ro
In the case of less than 0.15, the decline of output is also small, output it is linear also good.It is therefore preferable that the radius R of projection is diaphragm
Radius Ro less than 0.2 times (R/Ro≤0.2), especially preferably less than the 0.15 of Ro times (R/Ro≤0.15).
Then, the configuration of vent line 36 is illustrated.1 vent line 36 flexing or sinuous as shown in Figure 10 (A), so that
The foreign matter of dust or dust etc. is difficult to out of vent line 36 intrusion air gap 34.The vent line 36 is expected such as Figure 10 (A) institute
Show, from the direction vertical with diaphragm 35, configure in the axisymmetric position (ventilation relative to 2 mutually orthogonal directions
The shape of pipeline 36 can not be relative to the axial symmetry.).Therefore, the bar number of vent line 36 is set to 4 multiple.
If as shown in Figure 10 (B), vent line 36 only with respect to 1 direction axial symmetry, or such as Figure 10 (C) institute
Show, the position of vent line 36 there occurs it is biased, then in the presence of following risk：When by pressuring film plate 35, the pressure in air gap 34 is not
Equably it can be discharged from vent line 36, so that diaphragm 35 is deformed.It is therefore preferable that by vent line 36 such as shown in Figure 10 (A)
It is configured at position in a balanced way.
Vent line 36 can also be not provided with.Especially in the case where wanting reliably to prevent foreign matter from invading air gap 34,
Expect to be not provided with vent line 36 and make air gap 34 turn into seal construction.
Upper surface electrode 37 can not be annular shape, and multiple upper surfaces electricity in arc-shaped can also be set as shown in figure 11
Pole 37.
Upper surface electrode 37 can also be not provided with.This is because, upper substrate 35a is conductive, therefore as shown in figure 12,
Only need to set electrode pad 40 at least the 1 of the external upper substrate 35a in region of diaphragm 35.
Although being to set 1 projection 39 in the center of diaphragm 35 in the above-described embodiment, projection 39 is not limited to 1.
The near-earth that can for example connect sets multiple projections 39 in the central portion of diaphragm 35.
(embodiment 2)
Figure 13 is that the input unit 51 of the template for representing embodiments of the present invention 2, the construction of such as touch panel are cutd open
Face figure.Multiple pressure sensors 31 (sensor portion) of above-mentioned embodiment 1 are arranged in array-like (example by the input unit 51
Such as, it is rectangular-shaped or cellular) form.Also, each pressure sensor 31 is electrically independent, can separately be detected to each pressure
The pressure that force snesor 31 applies.According to such input unit 51, it can detect and be pressed by pressing body as touch panel
Point, can also detect each point by Compressive Strength (size of pressure).
Claims (9)
1. a kind of capacitance type pressure sensor, it is characterised in that
The capacitance type pressure sensor is the capacitance type pressure sensor of contact,
The capacitance type pressure sensor possesses：
Fixed electrode；
Dielectric layer, it is formed at the top of the fixed electrode；
The diaphragm of electric conductivity, it is formed at the top of the dielectric layer across space；And
One or more projections, it is arranged at the upper surface of the diaphragm,
The height of the projection is below the height in the space.
2. capacitance type pressure sensor according to claim 1, it is characterised in that
The projection is arranged at the upper face center portion of the diaphragm.
3. capacitance type pressure sensor according to claim 1, it is characterised in that
The capacitance type pressure sensor has diaphragm, and the diaphragm covers the surface of the diaphragm,
The projection with the diaphragm identical material by forming.
4. capacitance type pressure sensor according to claim 1, it is characterised in that
The projection is by integrally formed with the diaphragm with the diaphragm identical material.
5. capacitance type pressure sensor according to claim 1, it is characterised in that
The width of the projection is less than 0.2 times of the width of the diaphragm.
6. capacitance type pressure sensor according to claim 5, it is characterised in that
The width of the projection is less than 0.15 times of the width of the diaphragm.
7. capacitance type pressure sensor according to claim 1, it is characterised in that
From the direction vertical with the diaphragm, at relative to 2 mutually orthogonal virtual lines position respectively symmetrically
It is provided with ventilation path.
8. capacitance type pressure sensor according to claim 7, it is characterised in that
The ventilation path flexing or bending.
9. a kind of input unit, it is characterised in that be that the capacitance type pressure sensor arrangement described in claim 1 is multiple
.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-046661 | 2013-03-08 | ||
| JP2013046661A JP5974938B2 (en) | 2013-03-08 | 2013-03-08 | Capacitance type pressure sensor and input device |
| PCT/JP2013/082699 WO2014136337A1 (en) | 2013-03-08 | 2013-12-05 | Capacitance type pressure sensor and input apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105008879A CN105008879A (en) | 2015-10-28 |
| CN105008879B true CN105008879B (en) | 2017-08-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380074227.4A Active CN105008879B (en) | 2013-03-08 | 2013-12-05 | Capacitance type pressure sensor and input unit |
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| Country | Link |
|---|---|
| JP (1) | JP5974938B2 (en) |
| KR (1) | KR101724982B1 (en) |
| CN (1) | CN105008879B (en) |
| WO (1) | WO2014136337A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105136379A (en) * | 2015-07-17 | 2015-12-09 | 中国电子科技集团公司第四十九研究所 | Dynamic pressure sensor chip |
| KR102573333B1 (en) * | 2016-06-28 | 2023-08-31 | 삼성디스플레이 주식회사 | Display device |
| KR102573234B1 (en) | 2016-08-02 | 2023-08-31 | 삼성전자주식회사 | Electronic Device for Employing Full Front Screen |
| KR102353770B1 (en) * | 2017-05-08 | 2022-01-20 | 삼성전자 주식회사 | Electronic device including force sensor integrated with display |
| US10724907B2 (en) * | 2017-07-12 | 2020-07-28 | Sensata Technologies, Inc. | Pressure sensor element with glass barrier material configured for increased capacitive response |
| KR102009878B1 (en) * | 2017-11-16 | 2019-10-21 | 이경환 | Manufacture device of parts for pressure sensor and pressure sensor |
| CN107957273A (en) * | 2018-01-16 | 2018-04-24 | 北京先通康桥医药科技有限公司 | With the sensor pressed with ultrasound functions |
| JP6922798B2 (en) * | 2018-03-15 | 2021-08-18 | オムロン株式会社 | Capacitive pressure sensor |
| KR102520722B1 (en) * | 2018-04-05 | 2023-04-11 | 삼성디스플레이 주식회사 | Force sensor |
| US20240008252A1 (en) * | 2022-06-29 | 2024-01-04 | Nanya Technology Corporation | Semiconductor structure having air gap |
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| CN1552081A (en) * | 2001-07-17 | 2004-12-01 | ���ܿ���ϵͳ����˾ | Micro-electromechanical sensor |
| JP2005300400A (en) * | 2004-04-14 | 2005-10-27 | Alps Electric Co Ltd | Capacitance-type pressure sensor and its manufacturing method |
| US20050243064A1 (en) * | 2000-02-08 | 2005-11-03 | Nitta Corporation And Wacoh Corporation | Capacitance type sensor |
| CN101303240A (en) * | 2007-05-10 | 2008-11-12 | 北方工业大学 | Sensitive large signal output minitype pressure sensor |
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| US20050243064A1 (en) * | 2000-02-08 | 2005-11-03 | Nitta Corporation And Wacoh Corporation | Capacitance type sensor |
| CN1552081A (en) * | 2001-07-17 | 2004-12-01 | ���ܿ���ϵͳ����˾ | Micro-electromechanical sensor |
| JP2003139628A (en) * | 2002-07-02 | 2003-05-14 | Nitta Ind Corp | Capacity-type sensor |
| JP2005300400A (en) * | 2004-04-14 | 2005-10-27 | Alps Electric Co Ltd | Capacitance-type pressure sensor and its manufacturing method |
| CN101303240A (en) * | 2007-05-10 | 2008-11-12 | 北方工业大学 | Sensitive large signal output minitype pressure sensor |
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| WO2014136337A1 (en) | 2014-09-12 |
| JP2014173993A (en) | 2014-09-22 |
| KR20150108409A (en) | 2015-09-25 |
| CN105008879A (en) | 2015-10-28 |
| JP5974938B2 (en) | 2016-08-23 |
| KR101724982B1 (en) | 2017-04-07 |
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