CN105008879A - Capacitance Type Pressure Sensor And Input Apparatus - Google Patents
Capacitance Type Pressure Sensor And Input Apparatus Download PDFInfo
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- CN105008879A CN105008879A CN201380074227.4A CN201380074227A CN105008879A CN 105008879 A CN105008879 A CN 105008879A CN 201380074227 A CN201380074227 A CN 201380074227A CN 105008879 A CN105008879 A CN 105008879A
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- pressure sensor
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- projection
- type pressure
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0447—Position sensing using the local deformation of sensor cells
Abstract
A dielectric material layer (33) is formed on the upper surface of a fixed electrode (32). A recess (33a) is formed in the upper surface of the dielectric material layer (33) by having the upper surface of the dielectric material layer (33) recessed downward. The bottom surface of the recess (33a) is covered with the dielectric material layer (33). An upper substrate (35a) is laminated on the surface of the dielectric material layer (33) so as to cover the recess (33a). A thin-film-like conductive diaphragm (35) is formed of an upper substrate (35a) portion, i.e., a region positioned above the recess (33a). A protrusion (39) is provided at an upper surface center portion of the diaphragm (35).
Description
Technical field
The present invention relates to capacitance type pressure sensor and input media.Specifically, the present invention relates to the diaphragm (diaphragm) bent because of pressure contacts the contact detecting pressure capacitance type pressure sensor with dielectric layer.In addition, the input media utilizing this pressure transducer is related to.
Background technology
In general capacitance type pressure sensor, the diaphragm (movable electrode) of electric conductivity carries out opposed with fixed electorde across gap, and carrys out detected pressures according to the change of the electrostatic capacitance between the diaphragm bent because of pressure and fixed electorde.When this pressure transducer is the micro element using glass substrate or silicon substrate to be manufactured by MEMS (MEMS (micro electro mechanical system)) technology, if apply large pressure to diaphragm and larger flexure occurs, then there is the risk destroying diaphragm.
So propose following pressure transducer: arrange dielectric layer on the surface of fixed electorde, the diaphragm bent because of pressure contacts with dielectric layer, based on the change of its contact area, the electrostatic capacitance between diaphragm and fixed electorde changes.This pressure transducer is sometimes also referred to as contact-type electrostatic capacitance type pressure sensor.
As contact-type electrostatic capacitance type pressure sensor, the such as sensor in non-patent literature 1 on the books.(A) of Fig. 1 is the sectional view of the pressure transducer 11 represented described in non-patent literature 1.In this pressure transducer 11, form at the upper surface of glass substrate 12 fixed electorde 13 be made up of metallic film, from fixed electorde 13, be formed with dielectric film 14 at the upper surface of glass substrate 12.At the upper surface of dielectric film 14, be provided with electrode pad (pad) 16.Carry out opening to form through hole 15 at dielectric film 14, and electrode pad 16 is connected with fixed electorde 13 by through hole 15.Silicon substrate 17 is laminated with at the upper surface of dielectric film 14.Depressed part 18 is set at the upper surface of silicon substrate 17, and groove 19 is set at the lower surface of silicon substrate 17, thus between depressed part 18 and groove 19, be formed with the diaphragm 20 of film-form.Diaphragm 20 is arranged on the position overlapping with fixed electorde 13.The lower surface of silicon substrate 17 becomes the P being doped with high concentration B (boron)
+layer 21, imparts electric conductivity to diaphragm 20 and thus using diaphragm 20 as movable electrode.Between the lower surface and the upper surface of dielectric film 14 of diaphragm 20, created the gap 22 of several μm by groove 19.
Figure 1B is the figure representing the pressure of pressure transducer 11 and the relation (pressure-capacitance characteristic) of electrostatic capacitance, is documented in non-patent literature 1.If apply pressure to the diaphragm 20 of pressure transducer 11, then diaphragm 20 bends in response to this applying pressure, contacts under a certain pressure with dielectric film 14.On the transverse axis of Figure 1B, pressure is the interval (non-contact area) of 0 to Pa is the region that diaphragm 20 does not contact dielectric film 14.The pressure region that to be the interval (beginning contact area) of Pa to Pb be from diaphragm 20 contacts with dielectric film 14 to reliably contacting with dielectric film 14 with area to a certain degree.In the interval (operating space) that pressure is Pb to Pc, along with the increase of pressure, diaphragm 20 increases gradually with the area of the part that dielectric film 14 contacts.Pressure is the interval (zone of saturation) of Pc to Pd, even if be that almost whole of diaphragm 20 contacts with dielectric film 14 and pressure increases and the region that contact area also increases hardly.
According to the pressure-capacitance characteristic of Figure 1B, when pressure increases, at the non-contact area that diaphragm 20 does not come in contact, the change of electrostatic capacitance is little, but once enter beginning contact area, then the rate of change (gathering way) of electrostatic capacitance becomes large gradually.At operating space, although linearly improve, the rate of change of electrostatic capacitance reduces gradually, if enter zone of saturation, then electrostatic capacitance almost no longer increases.
In the pressure transducer 11 of this contact, the electrostatic capacitance C between diaphragm 20 and dielectric film 14 can represent according to following numerical expression 1.
C=Co+ ε (S/d) ... (numerical expression 1)
Wherein, diaphragm 20 and the contact area of dielectric film 14 are set to S, the thickness of dielectric film 14 are set to d, and characterize the specific inductive capacity of dielectric film 14 with ε.Co is the electrostatic capacitance in non-contact area.When pressure becomes large, thickness d and the DIELECTRIC CONSTANT ε of dielectric film 14 do not change, and the contact area S of diaphragm 20 increases, and therefore according to numerical expression 1, now the electrostatic capacitance C of pressure transducer 11 increases.
But pressure transducer 11 has following such problem.In pressure transducer 11, according to the front end geometry etc. of the pressing body pressed diaphragm 20, diaphragm 20 is different with dielectric film 14 area started when contacting.Its result, the characteristic of the rising part (starting the region close to Pb in the middle of contact area and operating space) of pressure-capacitance characteristic is (hereinafter referred to as rising characteristic.) change according to the front end geometry of pressing body 23.Such as, as shown in (A) of Fig. 2, when the pressing body 23 that former end face is little presses pressuring film plate 20, the contact area that diaphragm 20 starts when contacting with dielectric film 14 is little.On the other hand, as shown in (B) of Fig. 2, when the pressing body 23 that former end face is large presses pressuring film plate 20, even identical pressing force P, diaphragm 20 and dielectric film 14 contact area started when contacting also becomes large.Its result, the rising characteristic of pressure-capacitance characteristic changes according to the shape of pressing body 23 or size, there is the problem that the measuring accuracy cannot guaranteed in the lower pressure region of pressure transducer 11 is such.
Then, as shown in (C) of Fig. 2, diaphragm 20 when away from the position of its central portion is pressed body 23 press, even identical pressure P, as shown in (A) of Fig. 2, electrostatic capacitance situation about being also pressed from central portion is different sometimes.So based on the position that diaphragm 20 is pressed, the measured value of pressure transducer 11 changes, the deviation of pressing position becomes the reason of the measuring accuracy decline of pressure transducer 11.
Prior art document
Non-patent literature
Non-patent literature 1: Yamamoto is quick, other 4, " contact capacitance type pressure sensor ", and rattan storehouse skill report, K.K. Tokura, October calendar year 2001, No. 101, p.71-74
Summary of the invention
The problem that invention will solve
The present invention proposes in view of technical background as described above, its object is to, the impact providing size, shape or the pressing position that can reduce pressing body to bring thus the capacitance type pressure sensor of the contact that measuring accuracy is improved.
For solving the means of problem
Capacitance type pressure sensor involved in the present invention possesses: fixed electorde; Dielectric layer, it is formed at the top of described fixed electorde; The diaphragm of electric conductivity, it is formed at the top of described dielectric layer across space; And one or more projections, it is arranged at the upper surface of described diaphragm.
Capacitance type pressure sensor of the present invention has projection at the upper surface of diaphragm, if therefore come by pressuring film plate with pressing body, then based on projection, diaphragm is pushed to dielectric layer.Therefore, at institute's applied pressure hour, have nothing to do with the size of pressing body or shape, diaphragm is out of shape with certain shape along with pressure.So the deviation of the rising characteristic of pressure transducer diminishes, the output characteristics of pressure transducer improves.In addition, even if when the position of pressing body pressing there occurs a little departing from, also based on the projection of fixed position being arranged at diaphragm, diaphragm is pressed, therefore can reduce the deviation departing from caused output of pressing position, rising characteristic especially can be made to be improved.
When covering the surface of described diaphragm with diaphragm, this projection can be formed by the material identical with described diaphragm.By diaphragm and projection are set to same material, can make diaphragm and projection with 1 operation, therefore manufacturing process becomes simple.In addition, described projection can be come to be integrally formed with described diaphragm by the material identical with described diaphragm.In the case, by carrying out processing to form projection to diaphragm.
In one example of capacitance type pressure sensor involved in the present invention, described projection is arranged at the upper face center portion of described diaphragm.According to this example, be central portion projection being arranged at diaphragm, therefore based on pressing force, diaphragm is out of shape equably, thus not easily plastic yield occurs at diaphragm.
In another example of capacitance type pressure sensor involved in the present invention, the height of described projection is below the height in described space.If below the height height of projection being set to space, then, when pressing pressuring film plate, pressing body is not easily hindered by projection.Its result, being linearly improved of the output of pressure transducer.
In the another example of capacitance type pressure sensor involved in the present invention, the width of described projection is less than 0.2 times of the width of described diaphragm.In addition, in this example, the width of preferred described projection is less than 0.15 times of the width of described diaphragm.According to this example, the output characteristics arranging bossed pressure transducer becomes good.
In the another example of capacitance type pressure sensor involved in the present invention, observe from the direction vertical with described diaphragm, the position symmetrical respectively relative to mutually orthogonal 2 virtual lines is provided with ventilation path.According to this example, when pressing pressuring film plate, produce uniform stress at diaphragm, thus to prevent in office produce large stress and in diaphragm generation plastic yield.In addition, in this example, described ventilation path can flexing or bending.If make ventilation path flexing or bending, then foreign matter is difficult to invade sensor internal from ventilation path.
Input media involved in the present invention is by multiple for capacitance type pressure sensor involved in the present invention arrangement.According to this input media, can reduce the size of pressing body, pressing position the impact such as to depart from, precision can detect pressing position and pressing force well.
In addition, inscape described above to be carried out appropriately combined and feature that is that obtain by having for the means solving described problem in the present invention, and the present invention can carry out the various deformation of the combination based on inscape.
Accompanying drawing explanation
(A) of Fig. 1 is the summary section of the pressure transducer representing conventional example.Figure 1B is the figure of the relation representing pressure in the pressure transducer of the conventional example shown in Fig. 1 (A) and electrostatic capacitance.
(A) of Fig. 2 represents the skeleton diagram being started the state contacted by the diaphragm of little pressing body pressing and dielectric layer.(B) of Fig. 2 represents the skeleton diagram being started the state contacted by the diaphragm of large pressing body pressing and dielectric layer.(C) of Fig. 2 is the skeleton diagram representing the state be pressed at the position upper diaphragm away from central portion.
Fig. 3 is the vertical view of the pressure transducer representing embodiments of the present invention 1.
Fig. 4 is the sectional view of the pressure transducer shown in Fig. 3.
(A) of Fig. 5 is the skeleton diagram of the state represented when pressing the diaphragm of the pressure transducer shown in Fig. 3 with little pressing body.(B) of Fig. 5 is the skeleton diagram of the state represented when pressing the diaphragm of the pressure transducer shown in Fig. 3 with large pressing body.
(A) of Fig. 6 is the skeleton diagram of state when to represent with pressing body to press the diaphragm of the pressure transducer shown in Fig. 3 central.(B) of Fig. 6 is the skeleton diagram of the state represented when pressing the position of the central authorities of the diaphragm away from the pressure transducer shown in Fig. 3 with pressing body.
(A) of Fig. 7 is the skeleton diagram of the state represented when applying large load to press the diaphragm of the pressure transducer shown in Fig. 3.(B) of Fig. 7 is the skeleton diagram of comparative example when representing that the height of projection is greater than the height of air gap.
Fig. 8 represents for the different multiple samples (comprising unpolarized sample) of the height of projection, by simulation obtain to projection apply increase the weight of the figure with the result of the relation of the variable quantity of electrostatic capacitance.
Fig. 9 represents for the different multiple samples (comprising unpolarized sample) of the diameter of projection, by simulation obtain to projection apply increase the weight of the figure with the result of the relation of the variable quantity of electrostatic capacitance.
(C) of (A) of Figure 10, (B) of Figure 10 and Figure 10 is all the figure of the configuration representing vent line.
Figure 11 is the vertical view with the pressure transducer of the upper surface electrode of different shapes of the variation representing embodiments of the present invention 1.
Figure 12 is the vertical view of the pressure transducer of another variation of embodiments of the present invention 1.
Figure 13 is the sectional view of the input media of embodiments of the present invention 2.
The explanation of Reference numeral
31 pressure transducers
32 fixed electordes
33 dielectric layers
34 air gaps
35 diaphragms
36 vent lines
37 upper surface electrodes
39 projections
40 electrode pads
41 diaphragms
45 pressing bodies
51 input medias
Embodiment
Below, with reference to accompanying drawing, the preferred embodiment of the present invention is described.But the invention is not restricted to following embodiment, various design alteration can be carried out without departing from the spirit and scope of the invention.
(embodiment 1)
The structure of the pressure transducer 31 of embodiments of the present invention 1 is described with reference to Fig. 3 and Fig. 4.Fig. 3 is the vertical view of pressure transducer 31, and Fig. 4 is the sectional view of pressure transducer 31.
At pressure transducer 31, on the fixed electorde 32 be made up of the conductive material of low-resistance silicon substrate, metal film etc., be formed with dielectric layer 33.Dielectric layer 33 is by SiO
2the dielectric substance such as (heat oxide film), SiN, TEOS is formed.At the upper surface of dielectric layer 33, be arranged with groove 33a (recess).On dielectric layer 33, be formed with the upper substrate 35a of the film-form be made up of the conductive material of low-resistance silicon substrate etc.Upper substrate 35a covers the upper surface of groove 33a, by groove 33a, between the lower surface and the groove floor of dielectric layer 33 of upper substrate 35a, is formed with air gap 34 (space).So, the region extended by the upper horizontal at air gap 34 of upper substrate 35a, is formed with the diaphragm 35 of pressure-sensitive.At dielectric layer 33, in order to ensure the aeration between air gap 34 and outside, be formed with vent line 36 (ventilation path).Vent line 36 to be width the be narrow groove of about 30 μm, and flexing or wriggle to make the foreign matter such as dust or dust be difficult to invade (with reference to Figure 10) in air gap 34.
At the upper surface of upper substrate 35a, to surround the mode of diaphragm 35, be provided with the upper surface electrode 37 of the ring-type of metal material.The corner part of upper substrate 35a is provided with electrode pad 40, and upper surface electrode 37 is connected by wiring portion 42 with electrode pad 40.Upper surface electrode 37, wiring portion 42 and electrode pad 40 are by basalis Ti (thickness
)/superficial layer Au (thickness
) double layer of metal film make simultaneously.In addition, the lower surface of fixed electorde 32 is provided with lower surface electrode 38.Lower surface electrode 38 is also by basalis Ti (thickness
)/superficial layer Au (thickness
) double layer of metal film make.
In the middle of the upper surface of upper substrate 35a than the region of upper surface electrode 37 more lateral by by the resin of polyimide etc. or SiO
2, diaphragm 41 that the dielectric film of SiN etc. is formed covers.But eliminate diaphragm 41 near electrode pad 40, electrode pad 40 exposes from diaphragm 41.
In the upper face center portion of diaphragm 35, be provided with less projection 39.In illustrated example, projection 39 is drawn into cylindric, but also can be corner column or any shape such as unsetting.The size of projection is such as relative to the diaphragm 35 of radius R o=500 μm, and radius R is 25 μm, height H be 1 μm (about the scope of optimum dimension, by aftermentioned.)。Projection 39 both can be come to make with diaphragm 41 by the material identical with diaphragm 41 simultaneously, also can be made by the material identical with diaphragm 35.
If so the upper surface of diaphragm 35 is provided with projection 39, then can with the front end geometry of pressing body or size independently, according to the size of load, with stable contact area, diaphragm 35 is contacted with dielectric layer 33.(A) of Fig. 5 illustrates the situation coming by pressuring film plate 35 with the finger tip etc. of the less pressing body 45 such as child of front end face.(B) of Fig. 5 illustrates the situation coming by pressuring film plate 35 with the finger tip etc. of the larger pressing body 45 such as adult of front end face.If be provided with projection 39 at the upper surface of diaphragm 35, then when pressing body 45 presses pressuring film plate 35, diaphragm 35 can be pushed to dielectric layer 33 because of projection 39.So, as shown in (A) of Fig. 5 and (B) of Fig. 5, when diaphragm 35 starts to contact with dielectric layer 33, have nothing to do with the front end geometry of pressing body 45 or size, start to contact with dielectric layer 33 with identical contact area.Its result, the rising characteristic in the pressure-capacitance characteristic of pressure transducer 31 becomes the size impact of the body that is not easily pressed, and rising characteristic is stablized.
In addition, if be provided with projection 39 at the upper surface of diaphragm 35, then following effect will be obtained.Namely, no matter as Fig. 6 (A) be shown in the central portion of pressing body 45 by pressuring film plate 35 time, or as Fig. 6 (B) be shown in the position of the central authorities away from diaphragm 35 is pressed time, if identical to the size of the load that diaphragm 35 applies, then diaphragm 35 contacts with dielectric layer 33 in an identical manner.So, even if depart from by the position of pressuring film plate 35, also can detected pressures exactly, the measuring accuracy of pressure transducer 31 is improved.And then because diaphragm 35 is strengthened by projection 39, therefore diaphragm 35 becomes and not easily plastic yield occurs.
If apply large load further from diaphragm 35 and dielectric layer 33 start the state that contacts, then, as shown in (A) of Fig. 7, diaphragm 35 is pressed body 45 and directly presses, and along with load becomes large, diaphragm 35 increases with the contact area of dielectric layer 33.Therefore, at operating space, along with load becomes large, the electrostatic capacitance between diaphragm 35 and fixed electorde 32 increases gradually, can measure large pressure.
But as shown in (B) of Fig. 7, if the height H of projection 39 is greater than the height G of air gap 34, even if then apply large load with pressing body 45, pressing body 45 also can be hindered by projection 39 and become can not by pressuring film plate 35.Therefore, the height of preferred projection 39 equals the height G of air gap 34 or is less than the height G of air gap 34.
Fig. 8 illustrates the height change making projection under protrusion diameter (radius R of projection) is remained constant prerequisite, calculates the result of the relation of the variation delta C of the electrostatic capacitance between load F and diaphragm-fixed electorde applied by pressing body by simulating.The model that this simulation is used is the thickness of diaphragm is 10 μm, and the radius R o of diaphragm is 500 μm, and the height G of air gap is 1 μm, and the radius R of projection is the pressure transducer of 25 μm.In the model, make the height H of projection according to 0.50 μm (H/G=0.50), 0.75 μm (H/G=0.75), 1.0 μm (H/G=1.0), 2.0 μm (H/G=2.0), 5.0 μm (H/G=5.0) change, obtain the relation of load F and output (electrostatic capacitance change amount Δ C).In fig. 8, the relation of load and output is also shown for the model not arranging projection at diaphragm.
According to this analog result, as can be seen from Figure 8, when not arranging projection, in the region that load is little, exporting and declining, output linearly poor.When the height of projection is 5.0 with the ratio H/G of the height in gap, pressing body is hindered by projection, if therefore load becomes that large some the increment rate then exporting and export diminishes, and output linear or poor.Equally, when the height of projection is 2.0 with the ratio H/G of the height in gap, load is hindered by projection, and output diminishes.On the other hand, being in the model of the projection of less than 1 having H/G, will linear very good output being obtained.Thus, expecting that projection is configured to meet the height H of projection with the ratio of the height G in gap is H/G≤1.
Fig. 9 illustrates and under the height of projection is remained constant prerequisite, protrusion diameter is changed, and calculates the result of the relation of the variation delta C of the electrostatic capacitance between load F and diaphragm-fixed electorde applied by pressing body by simulating.The model that this simulation is used is the thickness of diaphragm is 10 μm, and the radius R o of diaphragm is 500 μm, and the height G of air gap is 1 μm, and the height H of projection is the pressure transducer of 1 μm.In the model, make protrusion diameter R according to 25 μm (R/Ro=0.05), 32.5 μm (R/Ro=0.065), 37.5 μm (R/Ro=0.075), 50 μm (R/Ro=0.1), 75 μm (R/Ro=0.15), 100 μm (R/Ro=0.2) change, obtain the relation of load F and output (electrostatic capacitance change amount Δ C).In fig .9, the relation of load and output is also shown for the model not arranging projection at diaphragm.
According to this analog result, equally, as can be seen from Figure 9, when not arranging projection, in the region that load is little, exporting and declining, output linearly poor.In contrast, the projection that R/Ro is less than 0.2 if arrange, then what export is linearly greatly improved.When R/Ro is 0.2, in the region that load is large, the increment rate of output diminishes, and export and also diminish, and when R/Ro is less than 0.15, the decline of output is also little, output linear also good.Therefore, the radius R of preferred projection is less than 0.2 times (R/Ro≤0.2) of the radius R o of diaphragm, is especially preferably less than 0.15 times (R/Ro≤0.15) of Ro.
Then, the configuration of vent line 36 is described.Article 1, vent line 36 flexing or sinuous as Suo Shi (A) of Figure 10, thus the foreign matter of dust or dust etc. is difficult to invade in air gap 34 from vent line 36.This vent line 36 is expected as shown in (A) of Figure 10, observes from the direction vertical with diaphragm 35, and (shape of vent line 36 can not relative to described rotational symmetry in the axisymmetric position being configured in relative to mutually orthogonal 2 directions.)。Therefore, the number of vent line 36 is set to the multiple of 4.
If as shown in (B) of Figure 10, vent line 36 is only relative to the rotational symmetry in 1 direction, or as shown in (C) of Figure 10, the position of vent line 36 there occurs biased, then there is following risk: when by pressuring film plate 35, pressure in air gap 34 can not discharge from vent line 36 equably, thus diaphragm 35 is out of shape.Therefore, preferably vent line 36 is configured at as shown in (A) of Figure 10 balanced position.
Also vent line 36 can not be set.Especially, when wanting reliably to prevent foreign matter from invading air gap 34, expect do not arrange vent line 36 and make air gap 34 become seal construction.
Upper surface electrode 37 can not be circular, also can arrange the multiple upper surface electrodes 37 in arc-shaped as shown in figure 11.
Also upper surface electrode 37 can not be set.This is because, upper substrate 35a has electric conductivity, therefore as shown in figure 12, only need at least 1 place of the external upper substrate 35a in the region of diaphragm 35 that electrode pad 40 is set.
Although be arrange 1 projection 39 in the central authorities of diaphragm 35 in the above-described embodiment, projection 39 is not limited to 1.The near-earth that such as can connect arranges multiple projection 39 at the central portion of diaphragm 35.
(embodiment 2)
Figure 13 is the sectional view of the input media 51 of the template representing embodiments of the present invention 2, the structure of such as touch panel.Multiple pressure transducers 31 (sensor part) of above-mentioned embodiment 1 are arranged in array-like (such as, rectangular-shaped or cellular) and form by this input media 51.Further, each pressure transducer 31 be electricity independently, can separately detect each pressure transducer 31 applied pressure.According to such input media 51, the point pressed by pressing body can be detected as touch panel, also can detect each point by Compressive Strength (size of pressure).
Claims (10)
1. a capacitance type pressure sensor, is characterized in that, possesses:
Fixed electorde;
Dielectric layer, it is formed at the top of described fixed electorde;
The diaphragm of electric conductivity, it is formed at the top of described dielectric layer across space; And
One or more projections, it is arranged at the upper surface of described diaphragm.
2. capacitance type pressure sensor according to claim 1, is characterized in that,
Described projection is arranged at the upper face center portion of described diaphragm.
3. capacitance type pressure sensor according to claim 1, is characterized in that,
Described capacitance type pressure sensor has diaphragm, and this diaphragm covers the surface of described diaphragm,
Described projection is formed by the material identical with described diaphragm.
4. capacitance type pressure sensor according to claim 1, is characterized in that,
Described projection is integrally formed with described diaphragm by the material identical with described diaphragm.
5. capacitance type pressure sensor according to claim 1, is characterized in that,
The height of described projection is below the height in described space.
6. capacitance type pressure sensor according to claim 1, is characterized in that,
The width of described projection is less than 0.2 times of the width of described diaphragm.
7. capacitance type pressure sensor according to claim 6, is characterized in that,
The width of described projection is less than 0.15 times of the width of described diaphragm.
8. capacitance type pressure sensor according to claim 1, is characterized in that,
Observe from the direction vertical with described diaphragm, the position symmetrical respectively relative to mutually orthogonal 2 virtual lines is provided with ventilation path.
9. capacitance type pressure sensor according to claim 8, is characterized in that,
Described ventilation path flexing or bending.
10. an input media, is characterized in that, forms multiple for capacitance type pressure sensor arrangement according to claim 1.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-046661 | 2013-03-08 | ||
| JP2013046661A JP5974938B2 (en) | 2013-03-08 | 2013-03-08 | Capacitance type pressure sensor and input device |
| PCT/JP2013/082699 WO2014136337A1 (en) | 2013-03-08 | 2013-12-05 | Capacitance type pressure sensor and input apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105008879A true CN105008879A (en) | 2015-10-28 |
| CN105008879B CN105008879B (en) | 2017-08-08 |
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ID=51490880
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|---|---|---|---|
| CN201380074227.4A Active CN105008879B (en) | 2013-03-08 | 2013-12-05 | Capacitance type pressure sensor and input unit |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5974938B2 (en) |
| KR (1) | KR101724982B1 (en) |
| CN (1) | CN105008879B (en) |
| WO (1) | WO2014136337A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107545844A (en) * | 2016-06-28 | 2018-01-05 | 三星显示有限公司 | Display device |
| CN107957273A (en) * | 2018-01-16 | 2018-04-24 | 北京先通康桥医药科技有限公司 | With the sensor pressed with ultrasound functions |
| CN109253827A (en) * | 2017-07-12 | 2019-01-22 | 森萨塔科技公司 | Pressure sensing element with the glass barrier object material constructed for the response of enhancing capacitor |
| CN110346072A (en) * | 2018-04-05 | 2019-10-18 | 三星显示有限公司 | Force snesor |
| US20240008252A1 (en) * | 2022-06-29 | 2024-01-04 | Nanya Technology Corporation | Semiconductor structure having air gap |
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|---|---|---|---|---|
| CN105136379A (en) * | 2015-07-17 | 2015-12-09 | 中国电子科技集团公司第四十九研究所 | Dynamic pressure sensor chip |
| KR102573234B1 (en) | 2016-08-02 | 2023-08-31 | 삼성전자주식회사 | Electronic Device for Employing Full Front Screen |
| KR102353770B1 (en) * | 2017-05-08 | 2022-01-20 | 삼성전자 주식회사 | Electronic device including force sensor integrated with display |
| KR102009878B1 (en) * | 2017-11-16 | 2019-10-21 | 이경환 | Manufacture device of parts for pressure sensor and pressure sensor |
| JP6922798B2 (en) * | 2018-03-15 | 2021-08-18 | オムロン株式会社 | Capacitive pressure sensor |
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2013
- 2013-03-08 JP JP2013046661A patent/JP5974938B2/en active Active
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- 2013-12-05 CN CN201380074227.4A patent/CN105008879B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107545844A (en) * | 2016-06-28 | 2018-01-05 | 三星显示有限公司 | Display device |
| CN109253827A (en) * | 2017-07-12 | 2019-01-22 | 森萨塔科技公司 | Pressure sensing element with the glass barrier object material constructed for the response of enhancing capacitor |
| CN107957273A (en) * | 2018-01-16 | 2018-04-24 | 北京先通康桥医药科技有限公司 | With the sensor pressed with ultrasound functions |
| CN110346072A (en) * | 2018-04-05 | 2019-10-18 | 三星显示有限公司 | Force snesor |
| CN110346072B (en) * | 2018-04-05 | 2023-01-06 | 三星显示有限公司 | Force sensor |
| US11703972B2 (en) | 2018-04-05 | 2023-07-18 | Samsung Display Co., Ltd. | Force sensor |
| US20240008252A1 (en) * | 2022-06-29 | 2024-01-04 | Nanya Technology Corporation | Semiconductor structure having air gap |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014136337A1 (en) | 2014-09-12 |
| CN105008879B (en) | 2017-08-08 |
| JP2014173993A (en) | 2014-09-22 |
| KR20150108409A (en) | 2015-09-25 |
| JP5974938B2 (en) | 2016-08-23 |
| KR101724982B1 (en) | 2017-04-07 |
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