CN104992780B - Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof - Google Patents
Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof Download PDFInfo
- Publication number
- CN104992780B CN104992780B CN201510389433.5A CN201510389433A CN104992780B CN 104992780 B CN104992780 B CN 104992780B CN 201510389433 A CN201510389433 A CN 201510389433A CN 104992780 B CN104992780 B CN 104992780B
- Authority
- CN
- China
- Prior art keywords
- stainless steel
- dividing plate
- deposition chamber
- steel substrate
- chamber dividing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
It is high that the present invention provides a kind of hardness, it is unlikely to deform, without cleaning, durability is good, use cost is low, the deposition chamber dividing plate prepared in the magnetic control sputtering device that conductive film is used of saving energy consumption, it includes stainless steel substrate and is attached to the 0.5mm of thickness about 0.2 of stainless steel substrate inner surface aluminium film, and stainless steel substrate inner surface and aluminium film surface are coarse, uneven.Present invention also offers the preparation method of above-mentioned deposition chamber dividing plate, stainless steel plate inner surface is used into blasting treatment, sand grains is diamond dust so that stainless steel plate inner surface forms uneven, then cleans, to remove Superficial Foreign Body, impurity and dust；Then dry；Aluminium-plated device is penetrated using melting, to stainless steel substrate inner surface meltallizing one layer of aluminium film of spraying plating through blasting treatment；210 230 DEG C are warming up to the stainless steel substrate after overlay film, then Temperature fall, eliminate stress.The deposition chamber dividing plate prepared in this way, substrate is firmly combined with aluminium film, is not easily stripped, and improves affinity of the deposit on its surface.
Description
Technical field
The technology of the present invention is related to the deposition chamber dividing plate in magnetic control sputtering device, specifically, is that one kind prepares conductive thin
Dividing plate in flexibility that film is used, many negative electrode precipitation equipments of continuous type magnetron sputtering.
Background technology
Flexible, many negative electrode magnetic control sputtering devices of continuous type are widely used in flexible display device, flexible intelligent touch-screen, soft
In the manufacture of property thin-film solar cells.In flexibility, continuous type, many negative electrode magnetic control sputtering devices, using dividing plate by each negative electrode it
Between isolate, one is the influence for reducing mutual ionization；Two be to stop the non-deposit towards deposition substrate face, and is inhaled
It is attached, in order to avoid the influence to being deposited substrate.
Using magnetic control sputtering device shown in Figure 1, many negative electrode deposition film forming of flexible, continuous type magnetron sputtering are carried out
Process, flexible and transparent base material sequentially passes through first to the 6th in plating membrane cavity C2 after being released from the let off roll A1 unreeled in chamber C1
Settling chamber D1 ~ D6 is simultaneously cooled down through cold bulging B1 windings, is wound by the wind-up roll A2 in winding chamber C3.Unreel chamber, plating membrane cavity and receipts
Vacuum state in volume chamber is mutually isolated, and carrying out flexible transparent conductive film that magnetron sputtering obtains using the device can be with
It is unlimited continuous uniform.Dividing plate S1 ~ S6 of first to the 6th settling chamber will isolate between each negative electrode in settling chamber, and one is to reduce
The influence of mutual ionization；Two be to stop the non-deposit towards deposition substrate face, and is adsorbed.The target of each negative electrode
Can be monocrystalline silicon, silver, oxygen-free high-conductivity electrolytic copper, conductor oxidate (titanium-doped zinc oxide tin or indium tin etc..
The dividing plate that tradition is used is stainless steel, or aluminium.Stainless steel separator due to its coefficient of expansion and deposit difference compared with
Greatly, it is adsorbed to after certain thickness, because the influence of magnetron sputtering temperature easily produces peeling, deposition quality and cathode target can be produced
Harmful effect, shutdown is frequently necessary to for this opens the cabin clean dividing plate, not only delay work, and recovers vacuum after opening the cabin and increase
Energy resource consumption.If using aluminium, its cost is of a relatively high, and hardness is low, is easily deformed in operation, one is produced to deposition quality
Fixed influence.
The content of the invention
It is high it is an object of the invention to provide a kind of hardness, it is unlikely to deform, without cleaning, durability is good, and use cost is low, section
The about deposition chamber dividing plate prepared in the magnetic control sputtering device that conductive film is used of energy consumption.
The deposition chamber dividing plate of the present invention prepared in the magnetic control sputtering device that conductive film is used, including stainless steel
Substrate and the aluminium film for being attached to stainless steel substrate inner surface, aluminium film thickness about 0.2-0.5mm；Stainless steel substrate inner surface and aluminium film
It is rough surface, uneven.
Above-mentioned deposition chamber dividing plate, the peak valley difference value about 30-40um of aluminium film surface, peak is away from about 40-50um.
Above-mentioned deposition chamber dividing plate, stainless steel substrate thickness 1-3mm.
The beneficial effect of this deposition chamber dividing plate：1st, low cost.With respect to aluminium base, this dividing plate has stainless steel substrate, firmly
Degree is high, is unlikely to deform, durable, and cost is low.2nd, energy resource consumption is reduced.One layer of attachment is preferable with deposit affinity on substrate
Aluminium film, and aluminium film surface is coarse, uneven, increases contact area；Improve affinity of the deposit on its surface.Subtract simultaneously
The cleaning of few dividing plate, saves cleaning cost, the energy of cleaning consumption；Also reduce and opened using the magnetron sputtering cavity of the dividing plate simultaneously
Cabin number of times, reduces the energy resource consumption that vacuum is recovered after opening the cabin, and improves the rate of utilization of work hour.
Deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used is prepared invention also provides a kind of
Preparation method, the deposition chamber dividing plate prepared in this way, substrate is firmly combined with aluminium film, is not easily stripped, while aluminium film surface
It is uneven, improve affinity of the deposit on its surface.
This prepares the preparation method of the deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used, including following steps
Suddenly：
A, roughening：Stainless steel plate inner surface as substrate is used into blasting treatment, sand grains is diamond dust so that stainless
Inner surface of steel plate forms uneven；
B, cleaning：To the stainless steel substrate inner surface cleaning through blasting treatment, to remove Superficial Foreign Body, impurity and powder
Dirt；Then dry；
C, overlay film：Aluminium-plated device is penetrated using melting, to one layer of the stainless steel substrate inner surface meltallizing spraying plating through blasting treatment
Aluminium film, aluminium film thickness about 0.2-0.5mm；
D, destressing：210-230 DEG C is warming up to the stainless steel substrate after overlay film, then Temperature fall, eliminates stress.
The preparation method of above-mentioned deposition chamber dividing plate, emery grit is 330-370 mesh.
The preparation method of above-mentioned deposition chamber dividing plate, has step after step c, before step d：D0, cleaning：After overlay film
Stainless steel substrate is cleaned, to remove Superficial Foreign Body, impurity and dust.
The preparation method of above-mentioned deposition chamber dividing plate, cleaning described in step b is to use supersonic wave cleaning machine and with pure water
Cleaned for cleaning fluid.
The preparation method of above-mentioned deposition chamber dividing plate, drying described in step b is to carry out drying and processing, drying temperature using baking oven
200 degree of degree, soaking time 10min.
The beneficial effect of the preparation method：
This method, the inner surface to stainless steel plate substrate in deposition chamber passes through（Sandblasting）Roughening treatment, is formed fine
Uneven face, adds the contact area with aluminium film, adhesion increase.Stainless steel plate dividing plate of the surface after roughening treatment
Surface（Penetrated by melting）Aluminum film layer is covered with, prepares efficient and convenient, and aluminium film surface is uneven, improves deposit on its surface
Affinity.Handled by destressing, dividing plate will not be deformed in the use state of high temperature.
Brief description of the drawings
Fig. 1 is magnetic control sputtering device schematic diagram；
Fig. 2 is deposition chamber dividing plate schematic diagram.
Embodiment
A kind of flexible, preparation of many negative electrode deposition chamber dividing plates of continuous type magnetron sputtering.
The substrate material of dividing plate is stainless steel, stainless steel substrate thickness 2.5mm.
Substrate leans on the overlay film method for making on inside cavities surface：
Surface protection, will need not be roughened, overlay film part is covered using adhesive tape class, it is to avoid spray on the inside of shaping stainless steel substrate
Sand processing destruction surface；
Surface coarsening processing, by shaping stainless steel substrate inner surface without forming micro concavo-convex by roughening treatment at protection
Face, using blasting treatment, the grains of sand are diamond dust, and the grains of sand are about 350 mesh；Referring to Fig. 2, after blasting treatment surface formed it is coarse not
Flat male and fomale(M＆F), its peak valley difference value X about 25-30um, peak is away from Y about 30-45um.
Cleaning, is used supersonic wave cleaning machine by stainless steel substrate of the inner surface after blasting treatment, is cleaned with cleaning fluid,
Cleaning fluid is pure water, to remove Superficial Foreign Body, impurity and dust；
Drying, makees drying and processing to workpiece after cleaning using baking oven, removes moisture removal.200 degree of drying temperature, time 10min.
Overlay film, aluminium-plated device is penetrated using melting, and in one layer of aluminium film of surface meltallizing spraying plating Jing Guo blasting treatment, aluminium film thickness is about
0.2-0.5mm;
Cleaning, is used supersonic wave cleaning machine by the stainless steel substrate after overlay film, is cleaned with cleaning fluid, and cleaning fluid is pure
Water, to remove Superficial Foreign Body, impurity and dust；
Stress elimination and drying, to workpiece after cleaning drying and processing is made using the automatic heating baking oven that cools, go moisture removal and
Stress elimination.220 DEG C of stress elimination and drying temperature highest, are incubated 10min, 8-10 DEG C during heating and cooling/min.
The deposition chamber dividing plate prepared in this way is referring to Fig. 2, including stainless steel substrate 1 and is attached in stainless steel substrate
The aluminium film 2 on surface, the surface irregularity of aluminium film 2, its peak valley difference value H about 30-40um, peak is away from L about 40-50um.The present invention's has
Beneficial effect：
1st, flexible, many negative electrode deposition chamber separator substrates of continuous type magnetron sputtering are stainless steel plate and the combination of aluminium film.
2nd, stainless steel plate substrate passes through in deposition indoor side surface（Sandblasting）Roughening treatment, forms micro concavo-convex face, increase
Contact area.
3rd, stainless steel plate baffle surface of the surface after roughening treatment（Penetrated by melting）It is covered with aluminum film layer, and aluminium film table
Face is uneven, improves affinity of the deposit on its surface.
Claims (5)
1. the preparation method of the deposition chamber dividing plate in preparing the magnetic control sputtering device that conductive film is used, it is characterized in that：It is described
Deposition chamber dividing plate includes stainless steel substrate and is attached to the aluminium film of stainless steel substrate inner surface；Stainless steel substrate inner surface and aluminium
It is film rough surface, uneven；The peak valley difference value 30-40um of aluminium film surface, peak is away from 40-50um；The preparation method includes following
Step：
A, roughening：Stainless steel plate inner surface as substrate is used into blasting treatment, sand grains is diamond dust so that stainless steel plate
Inner surface forms uneven；
B, cleaning：To the stainless steel substrate inner surface cleaning through blasting treatment, to remove Superficial Foreign Body, impurity and dust；So
After dry；
C, overlay film：Aluminium-plated device is penetrated using melting, to stainless steel substrate inner surface meltallizing one layer of aluminium film of spraying plating through blasting treatment,
Aluminium film thickness 0.2-0.5mm；
D, destressing：210-230 DEG C is warming up to the stainless steel substrate after overlay film, is then cooled, stress is eliminated.
2. the preparation method of deposition chamber dividing plate as claimed in claim 1, it is characterized in that：Emery grit is 330-370 mesh.
3. the preparation method of deposition chamber dividing plate as claimed in claim 1, it is characterized in that：There is step after step c, before step d
Suddenly：D0, cleaning：By the stainless steel substrate cleaning after overlay film, to remove Superficial Foreign Body, impurity and dust.
4. the preparation method of deposition chamber dividing plate as claimed in claim 1, it is characterized in that：Cleaning described in step b is using super
Sound wave cleaning machine is simultaneously cleaned by cleaning fluid of pure water.
5. the preparation method of deposition chamber dividing plate as claimed in claim 1, it is characterized in that：Drying described in step b is using baking
Case carries out drying and processing, 200 degree of drying temperature, soaking time 10min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510389433.5A CN104992780B (en) | 2015-07-06 | 2015-07-06 | Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510389433.5A CN104992780B (en) | 2015-07-06 | 2015-07-06 | Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104992780A CN104992780A (en) | 2015-10-21 |
| CN104992780B true CN104992780B (en) | 2017-07-14 |
Family
ID=54304582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510389433.5A Active CN104992780B (en) | 2015-07-06 | 2015-07-06 | Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104992780B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105887034A (en) * | 2016-06-07 | 2016-08-24 | 南京汇金锦元光电材料有限公司 | Multi-cathode magnetron sputtering interference control device and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395465A (en) * | 2001-07-05 | 2003-02-05 | 柏腾科技股份有限公司 | Method for forming electromagnetic wave interference shading film on non-conductive material |
| CN102800871A (en) * | 2012-08-14 | 2012-11-28 | 上海交通大学 | Fuel cell metal bipolar plate carbon chromium gradient coating and preparation method |
| CN103243305A (en) * | 2013-04-22 | 2013-08-14 | 兰州空间技术物理研究所 | Secondary electron emission film preparation method |
| CN103290376A (en) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | Diffusion impervious layer modification for flexible substrate |
| CN103789739A (en) * | 2014-01-22 | 2014-05-14 | 南京汇金锦元光电材料有限公司 | Magnetron sputtering coating device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102677009B (en) * | 2012-05-15 | 2014-05-28 | 中奥汇成科技有限公司 | Magnetron sputtering coating device, nanometer multilayer film and preparation method thereof |
-
2015
- 2015-07-06 CN CN201510389433.5A patent/CN104992780B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1395465A (en) * | 2001-07-05 | 2003-02-05 | 柏腾科技股份有限公司 | Method for forming electromagnetic wave interference shading film on non-conductive material |
| CN103290376A (en) * | 2012-03-05 | 2013-09-11 | 任丘市永基光电太阳能有限公司 | Diffusion impervious layer modification for flexible substrate |
| CN102800871A (en) * | 2012-08-14 | 2012-11-28 | 上海交通大学 | Fuel cell metal bipolar plate carbon chromium gradient coating and preparation method |
| CN103243305A (en) * | 2013-04-22 | 2013-08-14 | 兰州空间技术物理研究所 | Secondary electron emission film preparation method |
| CN103789739A (en) * | 2014-01-22 | 2014-05-14 | 南京汇金锦元光电材料有限公司 | Magnetron sputtering coating device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104992780A (en) | 2015-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101932429B1 (en) | Plasma resistant coating layer, method of manufacturing the same and Plasma resistant unit | |
| CN106558479B (en) | Target material assembly and its processing method | |
| CN101492808A (en) | Surface treatment process for square TiW target material for sputtering | |
| CN108570651A (en) | A kind of horizontal magnetron sputtering film production line of multi-chamber and its film plating process | |
| CN105835465A (en) | Antireflective anti-fingerprint laminate and manufacturing method thereof | |
| US20130340826A1 (en) | Flexible solar cell assembly and use of the same | |
| CN107346831A (en) | A kind of method for improving lithium ion battery service life | |
| US20120132660A1 (en) | Device housing and method for making the same | |
| JP2014173106A (en) | Deposition preventive plate for vacuum film deposition apparatus, vacuum film deposition apparatus, and vacuum film deposition method | |
| CN104992780B (en) | Prepare deposition chamber dividing plate in the magnetic control sputtering device that conductive film is used and preparation method thereof | |
| CN105970215A (en) | Preparation method for composite layer of bearing and bearing with composite layer | |
| CN105632863A (en) | Plasma etching apparatus | |
| CN108977781B (en) | Method for depositing W-N hard film on surface of hard alloy by magnetron sputtering composite technology | |
| CN106637207A (en) | Method for coating high temperature-resistant diamond on graphite substrate | |
| WO2014065125A1 (en) | Anti-adhesive plate for vacuum film deposition apparatus, method of manufacturing anti-adhesive plate for vacuum film deposition apparatus, vacuum film deposition apparatus, and vacuum film deposition method | |
| US20120171512A1 (en) | Process for surface treating magnesium alloy and electromagnetic shielding article made with same | |
| CN204779788U (en) | Deposition chamber body baffle that uses in magnetron sputtering device | |
| CN101494165A (en) | Surface treating technique for silicon wafer clip for splash plating | |
| JP7378838B2 (en) | Current collector of energy storage element and method for manufacturing current collector of energy storage element | |
| CN103849847A (en) | Method of preparing diamond-like membrane by film sputtering in SiNx middle layer | |
| CN104064511A (en) | Silicon chip contact hole process method | |
| US9328409B2 (en) | Coated article, method for making the same and electronic device using the same | |
| TW202006157A (en) | Method for processing roughness of target sputtering surface capable of providing a target with an excellent adhesion surface | |
| CN101717918B (en) | Preparation process of aluminum-base flexible electromagnetic shielding composite material | |
| CN110592548B (en) | Suede CuO composite structure film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211123 Address after: No. 20, Weiwu Road, Lingtang Hui Township, Gaoyou City, Yangzhou City, Jiangsu Province 225600 Patentee after: Gaoyou Huijin New Material Technology Co.,Ltd. Address before: 210046 Building 2, No.9 Xingxue Road, Nanjing Economic and Technological Development Zone, Nanjing City, Jiangsu Province Patentee before: NANJING HJ JINYUAN OPTOELECTRONIC MATERIAL CO.,LTD. |
|
| TR01 | Transfer of patent right |