CN104981087B - The electronic device structure of signal transmission lines and their applications - Google Patents

The electronic device structure of signal transmission lines and their applications Download PDF

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CN104981087B
CN104981087B CN 201410134385 CN201410134385A CN104981087B CN 104981087 B CN104981087 B CN 104981087B CN 201410134385 CN201410134385 CN 201410134385 CN 201410134385 A CN201410134385 A CN 201410134385A CN 104981087 B CN104981087 B CN 104981087B
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transmission line
surface
conductive
signal transmission
substrate
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CN 201410134385
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CN104981087A (en )
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颜孝璁
简育生
叶达勋
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瑞昱半导体股份有限公司
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Abstract

本发明涉及信号传输线结构及其应用的电子装置。 The present invention relates to an electronic device and a signal transmission line structure of the application. 一种信号传输线结构包括基板、多个硅穿孔(TSV)式沟槽、导电物质、至少一个导电线路以及介电层。 A signal transmission line structure includes a substrate, a plurality of silicon via (TSV) of formula trenches, a conductive material, the at least one conductive line and a dielectric layer. 基板具有彼此相对的第一表面以及第二表面。 The substrate having a first surface and a second surface opposite to each other. 硅穿孔式沟槽形成在基板的第一表面并沿着第一表面延伸。 Perforated silicon trench formed in the first surface of the substrate and extending along the first surface. 硅穿孔式沟槽的底面位于基板的第一表面与第二表面之间。 Perforated bottom surface of the silicon trench positioned between the first surface and the second surface of the substrate. 导电物质填满硅穿孔式沟槽以致形成传输线路。 TSV conductive substance fills the trenches so as to form a transmission line type. 导电线路位于传输线路的上方。 Conductive line is positioned above the transmission line. 介电层位于基板的第一表面上,并间隔导电线路与传输线路。 A dielectric layer disposed on the first surface of the substrate, and spaced conductive lines and the transmission line.

Description

信号传输线结构及其应用的电子装置 The electronic device structure of signal transmission lines and their applications

技术领域 FIELD

[0001]本发明是关于一种微带线路(microstrip)的结构设计,特别是关于一种信号传输线结构及其应用的电子装置。 [0001] The present invention relates to a structural design microstrip line (a microstrip), and more particularly to a signal transmission line structure and electronic device applications.

背景技术 Background technique

[0002]目目U由于无线网络、移动电话、全球定位系统(Global Positioning System; GPS)、以及数字电视等无线通信技术的快速进展及广大的需求,高速数字电路的设计及制造已成为通讯业界中的一项极为热门的电子技术。 [0002] head head U Because wireless networks, mobile phones, GPS (Global Positioning System; GPS) rapid progress, as well as digital television and other wireless communication technologies and the general needs, design and manufacture of high-speed digital circuits has become the communications industry in an extremely popular electronic technology. 基本上,大部分的高速数字电路皆使用微带线路(microstrip)或带型线路(stripline)来作为信号传输线,以传递高速的数字信号。 Basically, most of the high-speed digital circuits are used microstrip line (a microstrip) line or band type (Stripline) as the signal transmission line to transmit high-speed digital signals. 目前电子业界已发展出许多各式不同的高速数字信号传输用的电路板结构。 Currently the electronics industry has developed many different kinds of circuit board structure of the high-speed digital signal transmission.

[0003]已知的信号传输线结构是在介电层的两个表面分别形成相互对应的两个金属层。 [0003] The known signal transmission line structure is formed of two metal layers respectively corresponding to each other on both surfaces of the dielectric layer. 为了提供较佳的信号传输,两个金属层之间必须相距一个特定距离以上(g卩,介电层具有一个特定厚度),例如2微米(mi)。 In order to provide better signal transmission between the two metal layers must be spaced a certain distance or more (g Jie, a dielectric layer having a certain thickness), for example 2 microns (mi). 然而,在阳纳米(nm)制程下,两个金属层之间最多相距3微米(Mi)(即为最低金属层和最高金属层之间的可能距离);而在28nm制程下,两个金属层之间最多相距1 • 5wn。 However, in the male nanometers (nm) process, a maximum distance of 3 m between the two metal layers (i.e. the minimum possible distance between the top metal layer and a metal layer) (Mi); and in the 28nm process, the two metal up to a distance of 1 • 5wn between layers. 然而,电子装置的尺寸一直趋向轻薄短小的变化,但为了维持信号质量,信号传输线结构的尺寸则难以再行缩小,以致整体体积受限。 However, the size of the electronic device has a change trend toward compactness, but in order to maintain signal quality, the size of the signal transmission line structure is difficult to re-reduced, so that the overall volume of restricted. 另一为先进制程的金属层亦越来越薄,若仅实施多层金属层堆栈则会使得传输线设计上更加困难。 Another is also more advanced process thin metal layer, the more difficult to design transmission line only if the embodiment so that the metal layers will be stacked.

发明内容 SUMMARY

[0004]在实施例中,一种信号传输线结构包括基板、多个硅穿孔(TSV)式沟槽以及导电物质。 [0004] In an embodiment, a signal transmission line structure includes a substrate, a plurality of silicon via (TSV) of formula trench and a conductive material. 基板具有彼此相对的第一表面以及第二表面。 The substrate having a first surface and a second surface opposite to each other. 硅穿孔式沟槽形成在基板的第一表面并沿着第一表面延伸。 Perforated silicon trench formed in the first surface of the substrate and extending along the first surface. 各硅穿孔式沟槽的底面位于基板的第一表面与第二表面之间。 Silicon trench bottom surface of each through hole is positioned between the first surface and the second surface of the substrate. 导电物质填满这些硅穿孔式沟槽以致形成多个传输线路。 The conductive material fills these grooves so as to form a perforated silicon plurality of transmission lines.

[0005]在另一实施例中,一种信号传输线结构包括基板、多个硅穿孔crsv)式沟槽、导电物质、至少一个第一导电线路以及介电层。 [0005] In another embodiment, a signal transmission line structure includes a substrate, a plurality of TSVs crsv) of formula trenches, a conductive material, at least a first conductive line and a dielectric layer. 基板具有彼此相对的第一表面以及第二表面。 The substrate having a first surface and a second surface opposite to each other. 硅穿孔式沟槽形成在基板的第一表面并沿着第一表面延伸。 Perforated silicon trench formed in the first surface of the substrate and extending along the first surface. 硅穿孔式沟槽的底面位于基板的第一表面与第二表面之间。 Perforated bottom surface of the silicon trench positioned between the first surface and the second surface of the substrate. 导电物质填满硅穿孔式沟槽以致形成传输线路。 TSV conductive substance fills the trenches so as to form a transmission line type. 第一导电线路位于传输线路的上方。 A first conductive trace is positioned above the transmission line. 介电层位在基板的第一表面上,并间隔第一导电线路与传输线路。 Bit dielectric layer on the first surface of the substrate, and spaced a first conductive line and the transmission line. [0006]在又一实施例中,一种使用信号传输线结构的电子装置包括前述的信号传输线结构、前级电路以及后级电路。 [0006] In yet another embodiment, the electronic device A signal transmission line structure includes a signal transmission line structure of the front stage circuit and a rear stage circuit used. 前级电路耦接各传输线路的一端以及各第一导电线路的一端, 而后级电路耦接各传输线路的另一端以及各第一导电线路的另一端。 Pre-stage circuit is coupled to one end of each transmission line and a first end of each conductive line, and then stage circuit coupled to the other end of each transmission line and the other end of each of the first conductive trace. ' '

[0007]综上,根据本发明的信号传输线结构及其应用的电子装置利用硅穿孔技术将传输线路形成在基板中,以致能提供较大的信号路径与接地路径之间的所需距离,进而减少信号传输线结构使用的平面面积,以及提供较佳的组件特性。 [0007] In summary, the transmission line formed in the substrate of the electronic device using the TSV technology, and a signal transmission line structure according to the present invention is applied, so as to provide a desired distance between the large signal path and the ground path, and further reduce the plane area of ​​the structure used for the signal transmission line, as well as provide better device characteristics. 根据本发明的信号传输线结^ 及其应用的电子装置能提供较低的阻值、较小的寄生电容及较大的电感值,并容易提^所需的特征阻抗(characteristic impedance)(例如:5〇欧姆或75欧姆等)。 The electronic device a signal transmission line and the junction of the present invention is applied according to ^ provide a low resistance, a small parasitic capacitance and a large inductance value, and ^ readily provide desired characteristic impedance (characteristic impedance) (e.g.: 5〇 ohms or 75 ohms, etc.). 再者,根据本发明H、J'I曰刪软細們汉穴四用B、」电丁茨置逬〜步能波效应(sl〇w wave effects),以减少所需信号传输长度,进而进一步缩小芯片面^^1/、^ Further, according to the present invention, H, J'I puncturing said pigtail with four points are B Han, "Dingci electrical energy waves is set up to the step Peng effect (sl〇w wave effects), to reduce the required length of signal transmission, and further further refine the chip surface 1 ^^ / ^

附图说明 BRIEF DESCRIPTION

[_]图丨为根据本发明第-实施例的信号传示意 [_] FIG Shu the present invention according to a first - embodiment of a schematic signal transmission

[0009]图2为图1中的信号传输线结构的分解不川_〇]图3为棚本发明第二实施例的信号传输示細。 [0009] FIG. 2 is an exploded transmission line structure of FIG. 1 without a signal Nakagawa _〇] FIG 3 is a second embodiment of a signal transmission of the present invention is shown shed fine. 陶]图4为讎本发明第三实施例的信号传勺示麵。 Tao] FIG 4 is a third embodiment of the present invention, a signal transmission Chou spoon display surface. _2]图5为根据本发明第四实施例的信号传陶]图6为根据本发明第五实施例的信号传示章图 2] FIG. 5 is a signal transmitted according to a fifth embodiment shown in FIG. Chapter embodiment of the present invention according to a fourth embodiment of the signal transmission of the ceramic of the present invention] FIG. 6

[難]图7为根据本发明第六实施例的信号传意. [Difficult] FIG. 7 is intended to transmit a signal according to a sixth embodiment of the present invention.

[嶋]图8为根据本发明第七实施例的信号传'; _6]图9为图8中截线I-1的截面图。 [Nakajima] FIG 8 is a signal transmitted according to a seventh embodiment of the present invention apos; 6] in FIG. 9 is a cross sectional view of the line I-1 in FIG. 8.

[0017]图10为图8中信号传输线结构10的分解图。 [0017] FIG 10 FIG. 8 is a signal transmission line 10 is an exploded view of the structure. ;0018;图11根据士^明J八实施例的信号传输线结构的分解图。 ; 0018; FIG. 11 an exploded view of a signal transmission line structure according to Ming Shi J ^ eight embodiment. 〇〇19图I2棚本发明弟九实施例的信号传输线解 Solutions of the signal transmission line embodiment of FIG 〇〇19 I2 shed brother embodiment of the present invention, nine

[0_图丨3讎本发明第十实施働信号传输线结^示意图。 [FIG 0_ 3 Chou Shu Dong tenth embodiment of the present invention, a signal transmission line junction ^ FIG.

[0021]图14为图I3中截线II—II的截面图。 [0021] FIG. 14 is a sectional view of II-II section line I3 FIG.

[0022]图15为使用信号传输线结构的电子装 [0022] FIG. 15 is an electronic apparatus using a signal transmission line structure

[0_ _为使腦号传義结构_子_的另^ ^ 特征阻坑⑽的变化关系的曲线图。 [0_ _ Biography sense of the brain structure number variations graph showing the relationship between the sub-_ ^ _ ^ Another characteristic impedance of ⑽ pit. 力丨头誦町思固。 Shu force head Songdingsigu. 卽7为频率对 7 is a frequency calipering

[0024]图1S为频率对小信号增益(灿的变化关[0025]符号说明: [0024] FIG 1S frequency small signal gain (variation Can shut [0025] Description of Symbols:

[0026] 10 信号传输线结构 [0026] The signal transmission line structure 10

[0027] 20 前级电路 [0027] The front-end circuit 20

[0028] 30 后级电路 [0028] 30 rear-stage circuit

[0029] 11〇基板 [0029] substrate 11〇

[0030] 110a 第一表面 [0030] 110a first surface

[0031] 110b 第二表面 [0031] 110b second surface

[0032] 112 介电层 [0032] The dielectric layer 112

[0033] 120 绝缘层 [0033] The insulating layer 120

[0034] 130 传输线路 [0034] The transmission line 130

[0035] l3〇a硅穿孔式沟槽[0036] 130b导电物质 [0035] l3〇a TSV trench formula [0036] 130b conductive substance

[0037] 132 传输线路 [0037] The transmission line 132

[0038] IMa硅穿孔式沟槽[0039] 132b导电物质 [0038] IMa TSV trench formula [0039] 132b conductive substance

[0040] 134 传输线路 [0040] The transmission line 134

[0041] IMa桂穿孔式沟槽 [0041] IMa Gui perforated trench

[0042] 134b导电物质 [0042] 134b conductive substance

[0043] 136 传输线路 [0043] The transmission line 136

[0044] 138 传输线路 [0044] The transmission line 138

[0045] 150 导电线路 [0045] The conductive traces 150

[0046] 152 导电线路 [0046] The conductive traces 152

[0047] 154 导电线路 [0047] The conductive traces 154

[0048] 160 导电线路 [0048] The conductive traces 160

[0049] 162 导电线路 [0049] The conductive traces 162

[0050] 164 导电线路 [0050] The conductive traces 164

[0051] 166 导电线路 [0051] The conductive traces 166

[0052] 170 导通孔 [0052] The vias 170

[0053] 172 导通孔 [0053] The vias 172

[0054] 174 导通孔 [0054] The vias 174

[0055] 176 导通孔 [0055] The vias 176

[0056] L1 长度 [0056] L1 length

[0057] H1 深度 [0057] H1 depth

[0058] H2 厚度 [0058] H2 thickness

[0059] H3 厚度 [0059] H3 thickness

[0060] D1 宽度 [0060] D1 width

[0061] D2 配置宽度 [0061] D2 width configuration

[0062] D3 宽度 [0062] D3 width

[0063] D31 宽度 [0063] D31 width

[0064] D32 宽度 [0064] D32 width

[0065] D4 配置宽度 [0065] D4 width configuration

[0066] II 截线 [0066] II stub

[0067] II-II 截线 [0067] II-II section line

[0068] C1 曲线 [0068] C1 curve

[0069] C2 曲线 [0069] C2 curve

[0070] C3 曲线 [0070] C3 curve

[0071] C4 曲线 [0071] C4 curve

具体实施方式 detailed description

[0072]参照图1和2,信号传输线结构10包括:基板11〇、多个硅穿孔(thr〇ugh-silic0n via;TSV)式沟槽130a、132a、以及导电物质130b、132b。 [0072] Referring to Figures 1 and 2, the signal transmission line structure 10 includes: a substrate 11〇, a plurality of through silicon vias (thr〇ugh-silic0n via; TSV) of formula grooves 130a, 132a, and a conductive material 130b, 132b. 以下以两个硅穿孔式沟槽为例。 Example The following two perforated silicon trench.

[0073] 基板110具有第一表面ll〇a和第二表面11〇b,并且第一表面ll〇a和第二表面U〇b 彼此相对。 [0073] The substrate 110 has a first surface and a second surface 11〇b ll〇a, and a first surface and a second surface U〇b ll〇a opposite to each other. 换言之,基板110的第一表面ll〇a为上表面,而基板110的第二表面110b为下表面。 In other words, the first surface of the substrate 110 ll〇a upper surface and the second surface of the substrate 110, a lower surface 110b.

[0074]硅穿孔式沟槽l3〇a、l32a形成在基板11〇的第一表面n〇a。 [0074] Formula TSV trench l3〇a, l32a formed on the first surface of the substrate 11〇 of n〇a. 各个硅穿孔式沟13〇a、132a沿着第一表面丨丨0a延伸其长度L1。 Each groove 13〇a perforated silicon, 132a extending along the length L1 of the first surface Shushu 0a. 换言之,硅穿孔式沟槽13〇a、1:3¾为长条形曰 In other words, a perforated silicon trench 13〇a, 1: 3¾ of said elongated

[0075]各个硅穿孔式沟槽l3〇a、l32a由第一表面ll〇a开始向下(向第二表面11〇b)延伸其深度H1,但不贯穿基板110。 [0075] The respective perforated silicon trench l3〇a, ll〇a beam L32 a first surface extending downward to a depth H1 (the second surface 11〇b), but does not penetrate the substrate 110. 于此,各个硅穿孔式沟槽13〇a、132a的深度町小于基板u〇的厚度H2,即,各个娃穿孔式沟槽130a、13¾的底面位在第一表面1 i〇a和第二表面丨1013之间。 Thereto, the respective silicon-cho 13〇a perforated trench depth, less than the thickness H2 of the substrate 132a u〇, i.e., the bottom surface Wa of each perforated trench 130a, 13¾ bits in the first and second surface 1 i〇a between the surface Shu 1013.

[0076]在一些实施例中,各个硅穿孔式沟槽l3〇a、i32a的深度H1大于或等于二分之一的基板110的厚度H2。 [0076] In some embodiments, each of the silicon trench l3〇a perforated, I32a a depth equal to the thickness H1 or H2 is greater than one-half of the substrate 110.

[0077]在一些实施例中,各个硅穿孔式沟槽l3〇a、i:32a的深度H1大于或等于约5微米m)。 [0077] In some embodiments, each of the silicon trench l3〇a perforated, i: H1 32a depth greater than or equal to about 5 microns m). 在一些实施例中,TSV深度可为5wn〜6〇Wn,以实际实施状态来说,以15wn〜25wn为主要的犯围。 In some embodiments, TSV may 5wn~6〇Wn depth, the actual state of the embodiment is to make the main 15wn~25wn around. 换5之,5土穿孔式沟槽的株度较佳为5ym-60ym,且更佳地为15ym〜25ym。 5 In other words, the perforated line of the trench 5 Soil 5ym-60ym is preferred, and more preferably is 15ym~25ym.

[0078]导电物质130b、132b分别对应硅穿孔式沟槽13〇£1、132a。 [0078] conductive material 130b, 132b respectively correspond to Formula TSV trench 13〇 £ 1,132a. 导电物质13〇b填满对应的硅穿孔式沟槽l3〇a,以便形成传输线路130。 13〇b corresponding conductive substance filled trench silicon l3〇a perforated to form a transmission line 130. 而导电物质1:32b填满对应的硅穿孔式沟槽132a,以便形成传输线路132。 And the conductive material 1: 32b perforated silicon filled trench corresponding to 132a, so as to form a transmission line 132. 换言之,传输线路130、132嵌设在基板11〇的表面上(g卩,嵌设在基板110中)。 In other words, the transmission line 130, 132 is embedded in the upper surface of the substrate 11〇 (g Jie, embedded in the substrate 110). 于此,所形成之传输线路具有硅穿孔技术之结构特征,即相对于一般电路层具有较厚的厚度(大致上等于深度H1)。 Thereto, the transmission line having a structure formed wherein the TSV technology, namely with respect to a general circuit layer having a large thickness (substantially equal to the depth H1). 在一些实施例中,传输线路的厚度大于或等于约如m、较好为5 um - 6 0 um,且最好为15 um〜2 5wn。 In some embodiments, the thickness of the transmission line, such as greater than or equal to about m, preferably 5 um - 6 0 um, and most preferably 15 um~2 5wn.

[0079]在一些实施例中,基板110可为硅基板。 [0079] In some embodiments, the substrate 110 may be a silicon substrate. 此时,基板no与各传输线路130/132之间形成绝缘层120。 In this case, the insulating layer is formed between the substrate 120 and each transmission line no 130/132. 绝缘层120间隔基板11〇与各传输线路以致使基板]_1〇与各传输线路13〇/132电性绝缘。 11〇 spacer substrate 120 with the insulating layer to cause the transmission line substrate] _1〇 each transmission line 13〇 / 132 is electrically insulating. 其中,绝缘层120的材料可例如为二氧化硅或硅化氮(SiN),也可能为其他材质的氧化层。 Wherein the material of the insulating layer 120 may be, for example, silicon dioxide or suicide nitrogen (SiN), an oxide layer may also be made of other materials.

[00S0]在一些实施例中,传输线路13〇、132两者,其一可作为信号路径,而另一者则作为接地路径。 [00S0] In some embodiments, the transmission line 13〇, 132 both as one signal path, and the other is used as a grounding path. 而此两者相距的距离可以视设计的需要来选择调整。 Distance from the both, the design can be selected as desired adjustment.

[0081]为了方便描述,以下将两个硅穿孔式沟槽130a、132a分别称之为第一硅穿孔式沟槽130a以及第二硅穿孔式沟槽132a。 [0081] For convenience of description, two perforated silicon trenches 130a, 132a respectively as first silicon trench 130a and a second through hole perforated silicon trench 132a. 在一些实施例中,参照图3,以俯视基板11〇的第一表面110a来看,第一硅穿孔式沟槽130a沿着第一表面1 i〇a且以折叠式(folded)延伸其长度L,而第二硅穿孔式沟槽l32a则位于第一硅穿孔式沟槽之间。 In some embodiments, with reference to FIG. 3, a top view of a first surface of the substrate 110a 11〇 view, the first groove 130a and TSV formula to extend along a first folding surface 1 i〇a (Folded) of its length L, and the second groove TSV formula l32a are located between the first perforated silicon trench. 换言之,第一硅穿孔式沟槽130a的两端与第二娃穿孔式沟槽132a的一端位于基板11〇的同一侧。 In other words, one of both ends of the first groove 130a of Formula TSV with a second baby perforated grooves 132a on the same side of the substrate 11〇. 第二娃穿孔式沟槽132a的另一端位于基板110的另一侧,并且第一硅穿孔式沟槽13〇£1延伸绕过第二硅穿孔式沟槽132a的另一端。 The other end of the second groove 132a of the through hole Wa at the other side of the substrate 110, and the first trench 13〇 formula TSV. 1 £ extending the other end of the second bypass groove 132a of Formula TSV. 其中,第一硅穿孔式沟槽130a可呈现u形。 Wherein the first silicon trenches 130a may exhibit a perforated u-shaped.

[0082]于是,传输线路13〇可作为接地路径,而传输线路132则作为信号路径,并且传输线路i3〇为折叠式配置,以形成折叠式共平面波导(f〇lded C0pianar ffaveguide;folded CPW)架构,致使信号路径夹设在接地路径之间,进而提供较佳的信号屏蔽并同时提供共地, 由此节省使用面积。 [0082] Thus, the transmission line 13〇 as a grounding path, and the transmission line 132 as the signal path and to the transmission line i3〇 folded configuration, to form a folded coplanar waveguide (f〇lded C0pianar ffaveguide; folded CPW) architecture, so that the signal path is interposed between the ground path, thereby providing better signal shield while providing a common ground, thereby saving the use of space.

[0083]参照图4,在一些实施例中,信号传输线结构10可具有三个或更多之由导电物质13(^、13此、13扑填满硅穿孔式沟槽13(^、13此、13乜所构成的传输线路130、132、134。于是: 传输线路130、134可作为接地路径,而传输线路1幻则作为信号路径,以致使信号路径夹设在接地路径之间,进而提供较佳的信号屏蔽。 [0083] Referring to FIG 4, in some embodiments, a signal transmission line structure 10 may have three or more of the electrically conductive substance 13 (^, this 13, 13 fill the TSV flutter formula trench 13 (^, this 13 , 13 NIE 130, 132 composed of the transmission line then: transmission line 130, 134 can be used as a grounding path, and the transmission line 1 as the phantom signal path, the signal path to cause interposed between the ground path, thereby providing a better signal shielding.

[0084]在一些实施例中,当信号传输线结构10具有四个以上的传输线路(图中未示出) 时,这些传输线路可交替地作为信号路径或接地路径,g卩,信号路径和接地路径依序交替地配置,以构成共平面波导(coplanar waveguide;CPW)架构。 [0084] In some embodiments, when the signal transmission line structure 10 having more than four transmission lines when the (not shown), these transmission lines alternately as a signal path or the ground path, g Jie, the signal path and the ground path sequentially alternately arranged to constitute a CPW (coplanar waveguide; CPW) structure.

[0085]在一些实施例中,由导电物质130b、132b、l:34b填满娃穿孔式沟槽130a、132a、134a 所构成的传输线路130、132、134也可仅作为接地路径。 [0085] In some embodiments, a conductive substance 130b, 132b, l: 34b baby perforated filled trenches 130a, 132a, the transmission line 130,132,134 134a may also be formed only as a grounding path.

[0086]于是,构成不同传输线路130、132的导电物质130b、132b、134b可为相同材质或不同材质。 [0086] Thus, various transmission lines 130, 132 constituting the conductive substance 130b, 132b, 134b may be of the same material or different materials. 其中,导电物质130b、132b、134b可为金属材料。 Wherein the conductive substance 130b, 132b, 134b may be a metallic material.

[0087]参照图5和图6,信号传输线结构10可进一步包括介电层112以及至少一个导电线路(以下称之为第一导电线路150)。 [0087] Referring to FIGS. 5 and 6, the signal transmission line structure 10 may further include a dielectric layer 112 and at least one electrically conductive circuit (hereinafter referred to as a first conductive trace 150). 在图式中,将介电层112透明化,以便清楚显示各部件。 In the drawings, the transparent dielectric layer 112, in order to clearly show the components. 于是,传输线路130作为接地路径,而第一导电线路150作为信号路径,然而此非本发明之限制,其亦可相反。 Thus, the transmission line 130 as a ground path, and the first conductive line 150 as the signal path, but non-limiting aspect of this invention, which may also be opposite.

[0088]第一导电线路150位在传输线路130的上方。 [0088] The first conductive line 150 over the transmission line 130. 介电层112位在基板110的第一表面ll〇a上,并且间隔第一导电线路15〇与传输线路13〇。 The dielectric layer 112 on the first surface ll〇a substrate 110, and the interval between the first transmission line and conductive line 15〇 13〇.

[0089] 于疋,传知线路13〇如问上述的是由导电物质填满娃穿孔式沟槽所构成,而导电线路150可由金属层图案化成。 [0089] in Cloth, transmission line 13〇 known as Q described above is filled with the electrically conductive material trench formed through hole Wa, and the conductive line 150 may be formed into a metal layer pattern. 换言之,导电线路150的厚度Hs为一般单一电路层的线路厚度。 In other words, the thickness of the conductive trace line thickness Hs 150 is generally a single circuit layer. 换g之,传输线路130的厚度(即,娃穿孔式沟槽的深度hi)大于导电线路15〇的厚度H3。 G changing the thickness of the transmission line 130 (i.e., Wa perforated trench depth hi) is greater than the thickness H3 of the conductive line 15〇.

[0090] 在一些实施例中,传输线路13〇的配置宽度(即,传输线路130的宽度D1)可等于第一导电线路150的配置宽度(g卩,第一导电线路150的宽度D3),如图5和8所示。 [0090] In some embodiments, the width configuration (i.e., the width D1 of the transmission line 130) equal to the transmission line 13〇 first conductive line may be arranged in a width 150 (g Jie, the width of the first conductive line 150 D3), 5 and 8 as shown in FIG. 再者,传输线路130^配置宽度(g卩,宽度D1)也可大于第一导电线路丨⑽的配置宽度(g卩,宽度D3),如图6 和7所示,但传输线路13〇的导线宽度可小于或大于第一导电线路15〇的导线宽度。 Furthermore, the width of the transmission line 130 disposed ^ (g Jie, width D1) also be greater than the width of a first configuration Shu ⑽ conductive line (g Jie, width D3), 6 and 7, but the transmission line 13〇 conductor width may be smaller or larger than the wire width of the first conductive trace 15〇.

[0091 ]举例来说,参照图6,传输线路1:3〇的导线宽度(等同于宽度D1)实际大于第一导电线路150的导线宽度(等同于宽度D3)。 [0091] By way of example, with reference to FIG. 6, the transmission line 1: 3〇 conductor width (equivalent to a width D1) is greater than the actual width of the first conductive lead line 150 (equivalent to the width D3). 参照图7,传输线路13〇的导线宽度小于第一导电线路150的导线宽度,但传输线路130的配置宽度(g卩,宽度D1)大于第一导电线路15〇的配置宽度(即,宽度D3)。 Referring to FIG 7, the wire width of the transmission line is smaller than 13〇 lead width of the first conductive line 150, but the configuration of the width of the transmission line 130 (g Jie, a width D1) is greater than the width of the first conductive line disposed 15〇 (i.e., width D3 ).

[0092]在-些实施例中,参照图了至9,信号传输线结构1〇可设置多个传输线路mm 134、1^6、138。 [0092] In - some embodiments, the reference to FIG. 9, the signal transmission line structure may be provided a plurality of transmission lines 1〇 mm 134,1 ^ 6,138. 于是,这些传输线路13〇、132、134、136、138中每—者均如同前述是由导电物质填满娃穿?l式浦腳成,并且均作为舰路径。 Thus, these transmission lines 13〇, 132, 134 each - caught as the conductive substance is filled by the baby through the foot pump to Formula l, as the ship and each path?. 第—导印则作为信号路径。 - of the guide plate as the signal path. 反之,也可将传输线路亂132、134、136、138均_信号路径,而第—导电线路15()则作为接地路径。 Conversely, the transmission line may be arbitrary _ are signal paths 132, 134, and the first - conductive trace 15 () is used as a grounding path. 此外,其他配置方式大致上如同前述,故不再赘述。 In addition, other configurations substantially as in the previous embodiment, and therefore will not be repeated. _3]在-些实施例中,第—导电线路15呵对应传输线路亂亂队亂⑽的中间而设置。 _3] In - some embodiments, the first - corresponding to the intermediate conductive trace transmission line 15 Oh disorderly chaos ⑽ team is provided.

[0094]在齡[J中,传输线路亂见队亂⑽的配置宽勸呵等于第一导电线路150的配置宽度(即,宽度D4),細8和9所示。 [0094] In age [J, the transmission line see chaos chaos ⑽ team configuration advised Oh equal width arranged in a width of the first conductive line 150 (i.e., the width D4), 8 and 9 fine. 再者,传输线路丨加的配置宽度(即,宽度D2)也可大于第^导电线路150的配置宽度(g卩,宽度D3),如图7所示。 Further, the configuration of the transmission line Shu plus the width (i.e., width D2) may be larger than the width of the ^ conductive trace 150 is disposed (g Jie, width D3), as shown in FIG. 中,当彳§号传输线结构1Q设置多个传输线路13G、132、134、136、138 时,传各/Jn0 o 图睡14,信号传纖结构1呵设置斜第—导电线路150、 = t 构1呵设置单—传输_13喊多个传输线路⑽、I32、m、 中每一者均如同前述是由导电物质填满娃穿孔式沟n而^导#电线^=i2、i54位于同—平面上,并且此平面大致上平行于基板no的弟-麵應。 , When the left foot § No. 1Q transmission line structure is provided a plurality of transmission lines 13G, 132,134,136,138, the respective pass / Jn0 o sleep FIG. 14, a signal transmission fiber structure with oblique Oh - of conductive trace 150, = t 1 Oh is provided a single configuration - transmitting a plurality of transmission lines _13 call ⑽, I32, m, each filled with the caught as the electrically conductive material is perforated grooves Wa ^ n and guide wire # ^ = i2, i54 in the same - plane, and the plane is substantially parallel to the substrate is no brother - should face. 在-些头賴中,弟-导电线路150、152、154可_同—金属副案形成。 In - some header Lai, the brother - _ conductive traces 150, 152 may be the same - the sub-case is formed of metal.

[0098] 第一导电线路150、152、154位于传输线路130、132、134、136的上方。 [0098] The first conductive lines 150, 152, 130, 132 positioned above the transmission line. 介电层112形成于基板110的第一表面ll〇a上,并且间隔第一导电线路15〇、152、154与传输线路130、132、 134、136〇 The dielectric layer 112 is formed on the first surface of the substrate 110 ll〇a, and the interval between the first conductive trace 15〇, 152, 154, 130, 132 and the transmission line, 134,136〇

[00"]其中,第一导电线路15〇作为信号路径,而第一导电线路152、154作为接地路径,以提供较佳的信号屏蔽。 [00 '] wherein the first conductive trace 15〇 as a signal path, and the first conductive line 152 as a path to ground to provide a better signal shielding.

[0100] 于是,多个传输线路13〇、132、134、136可均为直线配置,如图10所示。 [0100] Thus, a plurality of transmission lines 13〇, 134, 136 may both be configured linearly, as shown in FIG. 此外,多个传输线路130、I32可均为折叠式配置(如1图11所示),或者为部分直线配置且部分均为折叠式配置(如图12所示),以减少信号线的配置数量。 Further, a plurality of transmission lines 130, I32 are folded can be disposed (e.g., 1 shown in FIG. 11), or as part of a straight line and the folded parts are arranged (12), arranged to reduce the signal lines number.

[0101] 在一些实施例中,参照图8至14,信号传输线结构1〇可设置一个或多个导通孔(以下称之为第一导通孔170、172)。 [0101] In some embodiments, with reference to FIGS. 8-14, the signal transmission line structure 1〇 may be provided or a plurality of vias (hereinafter referred to as the first via 170, 172).

[0102]第一导通孔170、172贯穿介电层112。 [0102] 170, 172 through the first via dielectric layer 112. 各第一'导通孔170 (或172) —端f禹接传输线路130域136),而各第一导通孔17〇(或172)的另一端耦接第一导电线路152域154)。 Each of the first 'via hole 170 (or 172) - f Yu end 130 connected to the transmission line region 136), and each first via hole and the other end 17〇 (or 172) coupled to the first conductive line 152 domain 154) . 换言之, 第一导通孔170导通传输线路130与第一导电线路152,而第一导通孔172导通传输线路136 与第一导电线路154。 In other words, the first conductive vias 170 transmission line 130 and the first conductive line 152, and the first conductive vias 172 transmission line 136 and the first conductive line 154.

[0103] 在一些实施例中,参照图8至14,在第一导电线路150、152、154与传输线路130、 1幻、134、I36之间还可设置一层或多层电路层。 [0103] In some embodiments, with reference to FIGS. 8-14, further one or more circuit layers disposed between the first conductive lines 150, 152 and the transmission line 130, a phantom, 134, I36. 换言之,信号传输线结构10可进一步包括其他导电线路(以下称为第二导电线路160、162、164、166)。 In other words, the signal transmission line structure 10 may further comprise other electrically conductive lines (hereinafter referred to as second conductive trace 160,162,164,166).

[0104] 各个第二导电线路160、162、164、166位于第一导电线路150、152、154与传输线路130、132、134、136之间的任一电路层上。 [0104] each of the second conductive trace positioned on either 160,162,164,166 circuit layer between the first conductive line 150, 152, 130, 132 and the transmission line. 于是,第二导电线路160、162、164、166中之任一者对应第一导电线路150、152、154中之一设置。 Thus, any one of the second conductive trace 160,162,164,166 one corresponding to one of a first set of conductive traces 150, 152.

[0105]第二导电线路16〇、164对应设置在对应的第一导电线路152与传输线路130之间, 并且任二者间由介电层112间隔开。 [0105] 16〇 second conductive trace 164 disposed between the corresponding first conductive line 152 corresponding to the transmission line 130, and either between the two layers separated by a dielectric spacer 112. 于是,耦接第一导电线路152与传输线路130的第一导通孔17〇亦贯穿并且耦接(电性连接)第二导电线路16〇、164,以堆栈传输线路130来增加深度、 降低阻值、或加强屏蔽。 Thus, the first conductive line 152 is coupled to the transmission line 130 with a first via hole and the through 17〇 also coupled (electrically connected) 16〇 second conductive line 164, the transmission line 130 to the stack depth to increase, decrease resistance, or to strengthen the shield. 其中,第二导电线路160、164可与对应的第一导电线路152重叠。 Wherein the second conductive trace 160, 164 may overlap the corresponding first conductive line 152. 此外,第二导电线路16〇、1(34还可与对应之第一导电线路152可具有大致上相同的尺寸。 Further, the second conductive trace 16〇, 1 (34 and may correspond to the first conductive line 152 may have substantially the same size.

[0106]而且,第一导电线路及第二导电线路可以视设计需求来选择与传输线路的样式(pattern)相同、不相同、或部分相同部分不同。 [0106] Further, a first conductive trace and the second conductive line may be selected depending on design requirements and specifications of the transmission line (pattern) same, are not the same, different or the same portions. 举例来说,在图8中,导电线路的样式(直线形)与传输线路的样式(直线形)相同;在图11中,导电线路的样式(直线形)与传输线路的样式(U形)不相同;在图12中,导电线路的样式(直线形)与传输线路的样式(传输线路U2、134 为直线形)部份相同,并且与传输线路的样式(传输线路136为U形)部份不相同。 For example, in FIG. 8, the conductive pattern line (linear) pattern of the transmission line (linear) the same; in FIG. 11, the pattern (linear) and the transmission line pattern of the conductive line (U-shape) are not the same; in FIG. 12, the same pattern of conductive lines (linear) and specifications of the transmission line (transmission line U2,134 rectilinear) portions, and with the transmission line pattern (the transmission line 136 is a U-shaped) portion copies are not the same. 此外,导电线路的样式也可配合对应的传输线路的样式设计,例如:图12中对应传输线路136的部分第一导电线路或第二导电线路也为U形样式。 Further, the conductive wiring pattern may also be designed with a corresponding transmission line style, for example: a transmission line 136 corresponding to the portion in FIG. 12 of the first conductive trace or the second conductive lines are also U-shaped pattern.

[0107]第二导电线路162、166对应设置在对应的第一导电线路154与传输线路136之间, 并且任二者间由介电层112间隔开。 [0107] 162, 166 corresponding to the second conductive trace is disposed between the corresponding first conductive line 154 and transmission line 136, and either between the two layers separated by a dielectric spacer 112. 于此,耦接第一导电线路154与传输线路136的第一导通孔172亦贯穿并且耦接(电性连接)第二导电线路162、166。 Thereto, the first conductive line 154 is coupled to the transmission line 136 and a first conductive through hole 172 and coupled also (electrically connected to) the second conductive lines 162, 166. 其中,第二导电线路162、166可与对应的第一导电线路B2重叠。 Wherein the second conductive trace 162, 166 may overlap the corresponding first conductive line B2. 此外,第二导电线路160、164还可与对应的第一导电线路152 可具有大致上相同的尺寸。 Further, the second conductive trace 160, 164 may also be the corresponding first conductive line 152 may have substantially the same size.

[0108]在一些实施例中,第二导电线路16〇、162位于同一平面。 [0108] In some embodiments, the second conductive trace 16〇, 162 located in the same plane. 其中,第二导电线路160、 162可由同一金属层图案化而成。 Wherein the second conductive trace 160, 162 may be formed from the same metal layer is patterned.

[0109]在一些实施例中,第二导电线路164、166位于同一平面。 [0109] In some embodiments, the second conductive traces 164 and 166 located in the same plane. 其中,第二导电线路16〇、 162可由同一金属层图案化而成。 Wherein the second conductive trace 16〇, 162 may be formed from the same metal layer is patterned. ,

[0110]于是,信号传输线结构10构成接地式共平面波导(grounded coplanar waveguide; GCPW)架构。 [0110] Thus, the signal transmission line 10 constituting the ground structure of formula coplanar waveguide (grounded coplanar waveguide; GCPW) architecture.

[0111]在一些实施例中,参照图9,信号传输线结构10可设置其他导通孔(以下称为第二导通孔174、176)。 [0111] In some embodiments, with reference to FIG. 9, the signal transmission line structure 10 may be provided additional vias (hereinafter referred to as the second via 174, 176). one

[0112]第二导通孔1料、176贯穿介电层II2。 [0112] The second via hole material 1, through the dielectric layer 176 II2. 各第二导通孔^奴或^6)的一端耦接传输线路132(或1S4),而各第二导通孔174(或176)的另一端耦接第二导电线路164 (或166)。 Each second via slave or ^ ^ 6) coupled to one end of the transmission line 132 (or 1S4), and each second via 174 (or 176) and the other end coupled to the second conductive line 164 (or 166) . 换言之,第二导通孔174 (或176)导通传输线路132 (或134)与第二导电线路164 (或166)。 In other words, the second via hole 174 (or 176) is on the transmission line 132 (or 134) and the second conductive line 164 (or 166).

[0113]于是,信号传输线结构10构成槽孔接地式共平面波导(slotted-grounded coplanar waveguide;slotted GCPW)架构。 [0113] Thus, the signal transmission line structure constituting the slot 10 is grounded coplanar waveguide type (slotted-grounded coplanar waveguide; slotted GCPW) architecture. 槽孔(slot)方向可为并行传输线、或为垂直传输线、或为45度角相交。 Slots (slot) intersects the direction parallel transmission lines, transmission lines, or vertical, or 45 degree angle. < ~ <~

[0114]在一些实施例中,上述的介电层112可为经过一道或多道半导体程序所形成的一层或多层介电材料。 [0114] In some embodiments, the dielectric layer 112 may be one or more layers of dielectric material through a channel or a program formed by a semiconductor.

[0115]在一些实施例中,根据本发明任一实施例的信号传输线结构1〇可具有高频电感效应,以作为任一电路所需的高频电感器。 [0115] In some embodiments, a signal transmission line structure in accordance with the present invention, any 1〇 embodiment may have a high frequency inductive effect, any desired as a high-frequency circuit inductors. 、 ' ^ '^

[0116]在一些实施例中,根据本发明任一实施例的信号传输线结构1〇可用来传输二电路之间的信号。 [0116] In some embodiments, a signal transmission line structure in accordance with the present invention, a 1〇 any embodiment may be used to transmit signals between the two circuits. > >

[0117]搭配参照图15,使用信号传输线结构的电子装置包括一前级电路2〇、前述任一实施例的信号传输线结构10以及后级电路30。 [0117] With reference to Figure 15, an electronic device using a signal transmission line structure includes a pre-stage circuit 2〇, the signal transmission line structure according to any one of the preceding embodiments 10 and 30 post-stage circuit.

[0118]信号传输线结构的一端耦接前级电路20,而信号传输线结构10的另一端耦接后级电路3〇。 [0118] One end of the transmission line structure is coupled to a signal pre-stage circuit 20, and the other end of the signal transmission line structure 10 coupled 3〇 stage circuit. 换言之,第一导电线路150、152、154与传输线路130、132、134、136的一端耦接前级电路20,而第一导电线路150、152、1M与传输线路130、132、134、136的另一端锅接后级电路30。 In other words, one end of the first conductive line 150, 152, 130, 132 and the transmission line is coupled to the front stage circuit 20, and the first conductive line and the transmission line 130, 132 150,152,1M the other end of the pot 30 followed by stage circuit. -

[0119]其中,丨目号传输线结构10能提供系统转换功能。 [0119] wherein, Shu mesh No. 10 provides the transmission line structure conversion system. 换言之,前级电路20与后级电路30 可具有不同特征阻抗或不同相位,而信号传输线结构1〇用来转换或调整其特征阻抗或相位。 In other words, pre-stage circuit 20 and the rear stage circuit 30 may have different characteristic impedances or different phases, and a signal for switching the transmission line structure 1〇 or adjust its characteristic impedance or phase. < <

[0120]举例而言,搭配参照图16,前级电路20具有75欧姆的特征阻抗,而后级电路3〇具有50欧姆的特征阻抗。 [0120] By way of example, with reference to FIG. 16, the front stage circuit 20 having a characteristic impedance of 75 ohms, then 3〇 stage circuit having a characteristic impedance of 50 ohms. 此时,第一导电线路150輔接前级电路20的一端的宽度〇31 (或其截面积)小于耦接后级电路30的一端的宽度D32 (或其截面积)。 In this case, the width of the first conductive trace 〇31 end 150 connected to the secondary circuit 20 of the preceding stage (or cross-sectional area) smaller than the width of one end is coupled to the subsequent stage circuit 30 D32 (or cross-sectional area). …、 ...,

[0121 ]综上,根据本发明的信号传输线结构及其应用的电子装置利用硅穿孔技术将传输线路形成在基板中,以致能提供较大的信号路径与接地路径之间的所需距离,进而缩小信号传输线结构的平面面积并提供较佳的组件特性。 [0121] In summary, the transmission line formed in the substrate of the electronic device using the TSV technology, and a signal transmission line structure according to the present invention is applied, so as to provide a desired distance between the large signal path and the ground path, and further plane area of ​​the reduced signal transmission line structure and provide better device characteristics. 根据本发明的信号传输线结构及其应^ 的电子装置lb 供较低的阻值、较小的寄生电容及较大的电感值,并容易提供所需的特征阻抗(例如:5〇欧姆或75欧姆等)。 For low resistance, small parasitic capacitance and a large inductance value based on the signal transmission line structure of the present invention and the electronic device to be ^ LB, and easily provide a desired characteristic impedance (e.g.: 75 ohms or 5〇 ohms, etc.). 再者,根据本发明的信号传输线结构及其应用的电子装置进一步能提供te波效应(slow wave effects),以减少所需信号传输长度,进而进一步缩小芯片面积。 Moreover, to further provide an electronic apparatus and a signal transmission line structure according to the present invention is applied te wave effect (slow wave effects), to reduce the required length of the signal transmission, thereby further reduce the chip area. ~ ~

[0122]糊而言,以图6所示的信号肖输线结构1〇为例,于是,第—导电线路脱的宽卢⑽ 设计为8微米、传输线路1S0的宽度D1为第一导电线路15〇的宽度D3的3倍、第一导电线路15〇^厚度H3为3_4微米,而第-导电线路1S0的下麵与传^^路刺勺上表面之间的绝对距禺为1.5微米。 [0122] paste, the signal transmission line structure Shaw 1〇 an example shown in FIG. 6, then, - of width off the conductive trace design ⑽ Lu 8 microns, the width D1 of the transmission line as a first conductive line 1S0 15〇 3 times the width D3 of the first conductive trace 15〇 ^ 3_4 thickness H3 of micrometers, while the first - the absolute distance Yu between the upper and lower transfer passage ^^ spoon conductive trace barbed surface 1S0 of 1.5 microns. 已知的丨目号传输线结构为在一介电层的二表面分别形成相互对应之二金属层。 Shu mesh number known as the transmission line structure is formed in the second surface of the dielectric layer respectively corresponding to each of the two metal layers. 参照图17,在特征阻抗(Z0)测试下,相较于已知的信号传输线结构(如图式中的曲线C1),根据本发明实施例的信号传输线结构10 (如图式中的曲线(^2)具有约70%的改善。参照图18,在小信号增益(S21)测试下,相较于已知的信号传输线结构(如图式中的曲线C3),根据本发明实施例的信号传输线结构1〇(如图式中的曲线C4)改善0.25分贝(dB)以上,其提供较无损耗的模拟信号传输。 Referring to FIG 17, in the characteristic impedance (Z0 of) test, compared to the known signal transmission line structure (FIG formula curve C1), (as shown in graph formula based on a signal transmission line embodiment of the present invention, the structure of Example 10 ( ^ 2) having about 70% improvement. Referring to FIG 18, in the small signal gain (S21) test, compared to the known signal transmission line structure (FIG formula curve C3), according to an embodiment of the present invention, a signal 1〇 transmission line structure (FIG formula curve C4) improving 0.25 db (dB) or more, which provides an analog signal transmission loss than those without.

[0123]虽然本发明公开了上述实施例,然而其并非用来限定本发明,任何本领域的技术人员,在不脱离本发明之精神和范围内,当可作些许的改动与润饰,因此本发明的专利保护范围须视本说明书所附的申请专利范围界定者为准。 [0123] While the present invention discloses the above-described embodiments, which however are not intended to limit the present invention, anyone skilled in the art, without departing from the spirit and scope of the present invention, may make various modifications and variations, so this the patentable scope of the present invention subject to the patent scope of the appended specification and their equivalents.

Claims (10)

  1. 1.一种使用信号传输线结构的电子装置,包括: 信号传输线结构,包括: 基板,具有彼此相对的第一表面以及第二表面; 硅穿孔式沟槽,在所述第一表面形成并沿着所述第一表面延伸,其中所述硅穿孔式沟槽的底面位于所述第一表面与所述第二表面之间; 导电物质,填满所述硅穿孔式沟槽以形成传输线路; 至少一个第一导电线路,位于所述传输线路的上方;以及介电层,位于所述第一表面上并隔开所述至少一个第一导电线路与所述传输线路; 前级电路,耦接所述传输线路的一端以及所述至少一个第一导电线路的一端;以及后级电路,耦接所述传输线路的另一端以及所述至少一个第一导电线路的另一端; 其中,所述前级电路与所述后级电路具有不同特征阻抗或不同相位,并且所述信号传输线结构被用来调整所述特征阻抗或所述相位; 其中,硅穿 1. A signal transmission line structure using an electronic device, comprising: a signal transmission line structure, comprising: a substrate having a first surface and a second surface opposite to each other; perforated silicon trench formed in the first surface and along extending said first surface, wherein the bottom surface of the perforated silicon trench positioned between said first surface and the second surface; conductive material filling the trenches to form the formula TSV transmission lines; at least a first conductive line, located above the transmission line; and a dielectric layer disposed on the first surface and spaced from said at least one conductive line and the first transmission line; front-end circuit, coupled to the one end of the at least one end of said transmission line and said first conductive line; and a rear-stage circuit, coupled to the other end of the transmission line and the other end of the at least a first conductive line; wherein the front stage circuit and the rear-stage circuit having a different phase or a different characteristic impedance, and the signal transmission line structure is used to adjust the phase or the characteristic impedance; wherein, silicon wear 孔式沟槽由第一表面开始向第二表面延伸深度H1,但不贯穿基板,其中,所述硅穿孔式沟槽的深度大于二分之一的所述基板的厚度,或所述硅穿孔式沟槽的深度大于5微米。 Hole trenches extending from the first surface to the second surface depth H1, but does not penetrate the substrate, wherein the depth of the trench silicon perforated greater than the thickness of said substrate is one-half, or TSV the depth of the groove is greater than 5 microns of formula.
  2. 2. 根据权利要求1所述的使用信号传输线结构的电子装置,其中所述至少一个第一导电线路的一端的宽度与所述至少一个第一导电线路的另一端的宽度不同。 2. The electronic device of the signal transmission line structure according to claim 1, wherein said at least one end of the first width of the at least one conductive trace of different widths at the other end of the first conductive trace.
  3. 3. 根据权利要求1所述的使用信号传输线结构的电子装置,其中所述至少一个第一导电线路为多个,并且所述传输线结构还包括: 至少一个第一导通孔,贯穿所述介电层,各第一导通孔的一端耦接所述传输线路,各第一导通孔的另一端耦接所述至少一个第一导电线路之中的一个。 3. The electronic device of the signal transmission line structure according to claim 1, wherein said at least one of a plurality of first electrically conductive line, and the transmission line structure further comprises: at least one first via hole, through the dielectric layer, one end of each of the first via hole is coupled to the transmission line, the other end of each of the first via coupled to at least one among a first conductive trace.
  4. 4. 根据权利要求3所述的使用信号传输线结构的电子装置,还包括: 至少一个第二导电线路,位于所述传输线路与所述第一导电线路之间,其中所述至少一个第一导通孔贯穿并耦接所述至少一个第二导电线路。 4. The electronic device using the signal transmission line structure according to claim 3, further comprising: at least one second conductive line, said transmission line disposed between the first conductive trace, wherein said at least one first guide and coupled through the through hole of the at least one second conductive line.
  5. 5. 根据权利要求1所述的使用信号传输线结构的电子装置,其中所述硅穿孔式沟槽的配置宽度大于所述至少一个第一导电线路的配置宽度。 5. The electronic device using the signal transmission line structure according to claim 1, wherein a width of the TSV type arranged grooves is greater than the width of the first configuration the at least one conductive trace.
  6. 6.根据权利要求1所述的使用信号传输线结构的电子装置,其中所述至少一个第一导电线路的样式与所述传输线路的样式的至少一部分相同。 6. The electronic device using the signal transmission line structure according to claim 1, wherein the at least one same pattern with at least a portion of the transmission line pattern of the first conductive wires.
  7. 7.根据权利要求1所述的使用信号传输线结构的电子装置,其中,所述传输线路为接地路径。 7. The electronic device using the signal transmission line structure according to claim 1, wherein said transmission line is a ground path.
  8. 8.根据权利要求1所述的使用信号传输线结构的电子装置,其中,所述至少一个第一导电线路之一者为接地路径。 8. The electronic device using the signal transmission line structure according to claim 1, wherein said at least one line by a first conductive path to ground. ' '
  9. 9.根据权利要求1所述的使用信号传输线结构的电子装置,还包括: 绝缘层,位于所述基板与所述传输线路之间,以将所述传输线路与所述基板隔离。 9. The electronic device using the signal transmission line structure according to claim 1, further comprising: an insulating layer disposed between said substrate and said transmission line, said transmission line to isolate the substrate.
  10. 10. —种信号传输线结构,包括: 基板,具有彼此相对的第一表面以及第二表面; 硅穿孔式沟槽,在所述第一表面形成并沿着所述第一表面延伸,其中所述硅穿孔式沟槽的底面位于所述第一表面与所述第二表面之间; 导电物质,填满这些硅穿孔式沟槽以形成传输线路; 至少一个第一导电线路,位于所述传输线路的上万;以及〜 介电层,位于所述第一表面上并隔开所述至少一个第一导电线路与所述传输线路其中,硅穿孔式沟槽由第一表面开始向第二表面延伸深度H1,但不贯穿基板'其i,所述硅穿孔式沟槽的深度大于二分之一的所述基板的厚度,或所述硅穿孔式沟槽的深度大于5微米。 10. - kind of signal transmission line structure, comprising: a substrate having a first surface and a second surface opposite to each other; perforated silicon trench formed in said first surface and extending along the first surface, wherein said perforated bottom surface of the silicon trench positioned between said first surface and the second surface; conductive material fills these grooves to form the formula TSV transmission lines; at least a first conductive line, said transmission line located up to ten thousand; and - a dielectric layer on the first surface and spaced from said first conductive line and said transmission line wherein the silicon trench extending through hole from the first surface to the second surface of the at least depth H1, but does not penetrate the substrate 'which i, the depth of the trench silicon perforated greater than the thickness of said substrate is one-half, or the depth of the trench silicon perforated greater than 5 microns.
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