CN104979745B - A kind of subnanosecond grade narrow spaces pulsed optical fibre laser device - Google Patents
A kind of subnanosecond grade narrow spaces pulsed optical fibre laser device Download PDFInfo
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- CN104979745B CN104979745B CN201510377084.5A CN201510377084A CN104979745B CN 104979745 B CN104979745 B CN 104979745B CN 201510377084 A CN201510377084 A CN 201510377084A CN 104979745 B CN104979745 B CN 104979745B
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- seed source
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Abstract
The present invention is suitable for laser equipment field, provide a kind of subnanosecond grade narrow spaces pulsed optical fibre laser device sheet, it includes the seed source pulse-generating circuit being successively electrically connected, seed source amplifying circuit and laser, the seed source pulse-generating circuit is used to export the nanosecond pulse signal of default pulsewidth and predeterminated frequency, the seed source amplifying circuit includes the first amplifier and the second amplifier, first amplifier and the second amplifier are successively electrically connected and form two-stage amplifying circuit, by the two-stage amplifying circuit laser will be transmitted to after nanosecond pulse signal amplification.The present invention both meets amplification and requires, and in turn avoids distorted signals.
Description
Technical field
The present invention relates to laser equipment field more particularly to a kind of subnanosecond grade narrow spaces pulsed optical fibre laser devices.
Background technique
In recent years, the application of the fast development with laser technology at home and abroad, laser technology is also more and more common, such as
The practical applications such as cutting, marking, detection, and domestic laser industry also has become one domestic emerging production in recent years
Industry, laser are made of circuit with optical path two parts, and the control to optical power is realized by the adjusting to circuit, can in
Different circuit optical path matchings is carried out according to different needs, in the prior art, since the pulse of MOPA laser is wider, peak value
Power is inadequate, quickly cracks down evil force so can not realize in application of specifically cracking down evil force, if pulsewidth is reduced, amplified signal
Distortion is serious, it is difficult to realize target call.
Summary of the invention
The technical problem to be solved in the present invention is that in view of the deficiencies of the prior art, it one kind is provided can reach amplification and want
Seek and be avoided that the subnanosecond grade narrow spaces pulsed optical fibre laser device of distortion.
In order to solve the above technical problems, the present invention adopts the following technical scheme that.
A kind of subnanosecond grade narrow spaces pulsed optical fibre laser device comprising have the seed source pulse being successively electrically connected production
Raw circuit, seed source amplifying circuit and laser, the seed source pulse-generating circuit is for exporting default pulsewidth and default frequency
The nanosecond pulse signal of rate, the seed source amplifying circuit include the first amplifier and the second amplifier, and described first puts
Big device and the second amplifier are successively electrically connected and form two-stage amplifying circuit, by the two-stage amplifying circuit by the nanosecond
Laser is transmitted to after pulse signal amplification；
The subnanosecond grade narrow spaces pulsed optical fibre laser device further includes using IC ADN8830 as temprature control unit
Temperature control circuit.
Preferably, the seed source pulse-generating circuit includes EPM570 chip and its peripheral circuit, the EPM570
Burning has a program code in chip, and enables EPM570 chip export receiving for default pulsewidth and predeterminated frequency by the program code
Second grade pulse signal.
Preferably, the peripheral circuit of the EPM570 chip includes clock chip and crystal oscillator, the type of the clock chip
It number is DS1023.
Preferably, the pulsewidth of the nanosecond pulse signal is 1.5ns~40ns, the frequency of the nanosecond pulse signal
For 45kHz~1000kHz.
Preferably, the chip model of first amplifier and the second amplifier is ths3202.
Preferably, the route between first amplifier and the second amplifier is equipped with a PNP pipe, the PNP pipe
Emitter is connected to the output end of the first amplifier, and the base stage of the PNP pipe is connected to the input terminal of the second amplifier, described
The collector of PNP pipe is hanging.
Preferably, the seed source amplifying circuit further includes having a field-effect tube, the grid of field-effect tube connection the
The output end of two amplifiers, the drain electrode of the field-effect tube and source electrode are separately connected laser and ground.
In subnanosecond grade narrow spaces pulsed optical fibre laser device disclosed by the invention, the output of seed source pulse-generating circuit
As seed source signal, which first passes through the first amplifier progress level-one and follows nanosecond pulse signal, to guarantee
To the load capacity of the buffering of seed source, isolation and subsequent amplification, amplification factor is enabled to reach expected parameter, next
It is exactly the amplification of seed source, that is, carries out second level amplification using the second amplifier, so that seed source pulse amplitude becomes larger, signal
Become strong, be more conducive to drive, so that the seed source power of laser is amplified, has both met amplification and required, in turn avoided signal
Distortion.
Detailed description of the invention
Fig. 1 is the circuit block diagram of subnanosecond grade narrow spaces pulsed optical fibre laser device provided in an embodiment of the present invention.
Fig. 2 is the schematic diagram of seed source pulse-generating circuit provided in an embodiment of the present invention.
Fig. 3 is the schematic diagram of seed source amplifying circuit provided in an embodiment of the present invention.
Fig. 4 is the schematic diagram of temperature control circuit provided in an embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The invention discloses a kind of subnanosecond grade narrow spaces pulsed optical fibre laser devices, in conjunction with shown in Fig. 1 to Fig. 3, packet
Include the seed source pulse-generating circuit 1, seed source amplifying circuit 2 and laser 3 being successively electrically connected, the seed source pulse
Generation circuit 1 is used to export the nanosecond pulse signal of default pulsewidth and predeterminated frequency, and the seed source amplifying circuit 2 includes
First amplifier U7 and the second amplifier U6, the first amplifier U7 and the second amplifier U6 are successively electrically connected and form two
Grade amplifying circuit will be transmitted to laser 3 after nanosecond pulse signal amplification by the two-stage amplifying circuit.
In above-mentioned subnanosecond grade narrow spaces pulsed optical fibre laser device, the nanosecond of the output of seed source pulse-generating circuit 1
As seed source signal, which first passes through the first amplifier U7 progress level-one and follows pulse signal, to guarantee to kind
The buffering of component, isolation and subsequent amplification load capacity, enable amplification factor to reach expected parameter, be next exactly
The amplification of seed source, that is, second level amplification is carried out using the second amplifier U6, so that seed source pulse amplitude becomes larger, signal becomes
By force, it is more conducive to drive, so that the seed source power of laser is amplified, has both met amplification and required, in turn avoided signal mistake
Very.
The laser 3 is 1064 lasers as a preferred method, but this be only one of the invention preferably
Embodiment is not intended to restrict the invention, and in other embodiments of the invention, the laser 3 can also be other models.
About the specific structure of seed source pulse-generating circuit 1, as shown in Fig. 2, the seed source pulse-generating circuit 1 wraps
EPM570 chip U3 and its peripheral circuit are included, burning has program code in the EPM570 chip U3, and passes through the program generation
Code and enable EPM570 chip U3 export the nanosecond pulse signal of default pulsewidth and predeterminated frequency.
Further, the peripheral circuit of the EPM570 chip U3 includes clock chip U5 and crystal oscillator Y1, the clock
The model of chip U5 is DS1023.
The pulsewidth of the nanosecond pulse signal is 1.5ns~40ns, the nanosecond pulse as a preferred method,
The frequency of signal is 45kHz~1000kHz.
Wherein, seed source electric signal is generated by IC EPM570 and DS1023, is then specifically by institute inside EPM570
The program code write is realized along with clock chip DS1023.
About the specific structure of seed source amplifying circuit 2, as shown in figure 3, the first amplifier U7 and the second amplifier
The advantages that chip model of U6 is ths3202, and the present invention makes full use of ths3202, low noise, fast response time, in conjunction with it
Peripheral circuit forms ideal negative feedback amplifier circuit.
Further, the route between the first amplifier U7 and the second amplifier U6 is equipped with a PNP pipe Q1, described
The emitter of PNP pipe Q1 is connected to the output end of the first amplifier U7, and the base stage of the PNP pipe Q1 is connected to the second amplifier U6
Input terminal, the collector of the PNP pipe Q1 is hanging.PNP pipe Q1 is used to be isolated the amplification of seed source level-one and amplifies with second level, with
Anti- seed source influences level-one after second level amplification and follows, and avoids the pulse shape and amplification factor that influence seed source.
Further, the seed source amplifying circuit 2 further includes having a field-effect tube Q2, the grid of the field-effect tube Q2
The output end of the second amplifier U6 is connected, the drain electrode of the field-effect tube Q2 and source electrode are separately connected laser 3 and ground, should
Field-effect tube Q2 has stronger driving capability, and is particularly suited for protecting signal.
It further, include resistance R8, resistance R11, resistance in level-one amplifier for seed source amplifying circuit 2
R12, resistance R15 are 0 Ω, these three resistance are primarily used to guarantee the input of signal, and resistance R5 is mainly THS3202 chip
Main match parameter, the signal that resistance R5 is used as level-one follow, and the resistance value of resistance R5 is 560 Ω, and resistance R6 is level-one amplifier
Output impedance matching, the resistance value of resistance R6 is 47 Ω, and capacitor C22 is 10pF, and capacitor C22 can effectively subtract for filtering
Few influence of the high-frequency noise to signal, capacitor C13, capacitor C15, capacitor C18, capacitor C21 are 100nF, this four capacitors are used
Make the filtering of amplifier power supply.
Q1 is that the hanging triode of collector is used as diode, model L6 selected by triode, to prevent the second level from putting
Big influence of the signal to previous stage signal, and then influence the amplification of overall signal.
Capacitor C12, capacitor C14, capacitor C19, capacitor C20 are 100nF in second level amplification, and four be power filter electricity
Hold, resistance R13 is 560 Ω, and wherein homophase input termination+5V is in order to raise whole level, so that the peak-to-peak value Vpp of signal
> Vgs enables RF metal-oxide-semiconductor to work normally, and signal can also drive LD laser.Resistance R3, resistance R9 are 0 Ω, resistance
R10 is 56 Ω, resistance R4 is 51 Ω, resistance R16 is 100 Ω, the whole matching of above-mentioned resistance composition amplifier, and enlargement range is reachable
2 times or more.Resistance R7 is 47 Ω, and resistance R7 is the matching of amplifier output impedance.Capacitor C23 is 5pF, and resistance R14 is 5.6 Ω,
Due to having certain pulsewidth amplification in amplification process, thus capacitor C23 and resistance R14 have in terms of compression pulse width it is certain
Effect, main function are that resistance capacitance matching achievees the purpose that narrow pulsewidth.
As a kind of preferred embodiment of the invention, the model of metal-oxide-semiconductor Q2 is MRF158, and metal-oxide-semiconductor Q2 is radio frequency MOS
Pipe.In addition, the present invention further preferably uses voltage conversion chip LTC660.
Herein it should be noted that selection above with respect to resistance, capacitor in seed source amplifying circuit, and about each member
The parameter setting of part is only used for the protection scope for better describing technical solution of the present invention, being not intended to restrict the invention, all
It is device selection, the parameter setting etc. made on the basis of technical solution of the present invention, is accordingly to be regarded as being equal for technical solution of the present invention
Replacement, thus should all be within protection scope of the present invention.
It further include temperature control circuit, as shown in figure 4, temprature control unit relies primarily on IC ADN8830 herein on basis
Ordinary temperature control circuit realize, by the TEC inside laser come work, so that laser works are relatively steady at one
Under the conditions of fixed temperature, and the performance of laser not will receive big influence, so that entire pulse laser the operation is stable, together
When power it is also more stable, for entire laser application be very crucial.In the temperature control circuit, ADN8830's is specific right
Temperature control principle be carried out by voltage of the temperature sensor to thermistor both ends sampling and by with set by normal work
Voltage value corresponding to fixed temperature compares, and controls temperature so as to adjust sense of current and size is flowed through in refrigerator
's.Thermistor is connected in error amplifying circuit by a simple partial pressure and is monitored by ADN8830.The voltage and mesh
The input voltage of mark temperature setting is compared, to generate an error electricity with above-mentioned two voltage difference at error rate
Pressure.By judging that the logic of 5 feet (TEMPLOCK) of ADN8830 exports it may determine that whether target temperature has reached.When
When reaching target temperature, high level is exported, light emitting diode works normally.The output of error amplifier is input into compensation amplification
Device, the perimeter network for compensating amplifier include several resistance with capacitor composition PID network.It can come by adjusting perimeter network excellent
It is corresponding in the stepping for stablizing time and largest current change to change TEC temperature.TEC is differentiated driving, and defeated by the structure optimization of H bridge
Voltage fluctuation out.ADN8830 can drive for providing the external metal-oxide-semiconductor of electric current to TEC, and wherein we have selected PMOS tube
IRF5303 is with NMOS tube IRF024N.Wherein when sample detecting temperature voltage reaches setting voltage, 5 feet export high level, hair
Optical diode gives a green light, and when 1 foot exports high level, light emitting diode sends out a warning.
In subnanosecond grade narrow spaces pulsed optical fibre laser device disclosed by the invention, seed source signal first passes through the first amplification
Device U7 carries out level-one and follows, and the second amplifier U6 is recycled to carry out second level amplification, so that seed source pulse amplitude becomes larger, signal becomes
By force, it is more conducive to drive, so that the seed source power of laser is amplified, has both met amplification and required, in turn avoided signal mistake
Very.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (7)
1. a kind of subnanosecond grade narrow spaces pulsed optical fibre laser device, which is characterized in that include the seed being successively electrically connected
Source pulse-generating circuit, seed source amplifying circuit and laser, the seed source pulse-generating circuit is for exporting default pulsewidth
With the nanosecond pulse signal of predeterminated frequency, the seed source amplifying circuit includes the first amplifier and the second amplifier, institute
It states the first amplifier and the second amplifier is successively electrically connected and forms two-stage amplifying circuit, by the two-stage amplifying circuit by institute
Laser is transmitted to after stating the amplification of nanosecond pulse signal；
The subnanosecond grade narrow spaces pulsed optical fibre laser device further includes the temperature using IC ADN8830 as temprature control unit
Control circuit.
2. subnanosecond grade narrow spaces pulsed optical fibre laser device as described in claim 1, which is characterized in that the seed source arteries and veins
Rushing generation circuit includes EPM570 chip and its peripheral circuit, and burning has program code in the EPM570 chip, and passes through
The program code and enable EPM570 chip export the nanosecond pulse signal of default pulsewidth and predeterminated frequency.
3. subnanosecond grade narrow spaces pulsed optical fibre laser device as claimed in claim 2, which is characterized in that the EPM570 core
The peripheral circuit of piece includes clock chip and crystal oscillator, and the model of the clock chip is DS1023.
4. subnanosecond grade narrow spaces pulsed optical fibre laser device as described in claim 1, which is characterized in that the nanosecond arteries and veins
The pulsewidth for rushing signal is 1.5ns~40ns, and the frequency of the nanosecond pulse signal is 45kHz~1000kHz.
5. subnanosecond grade narrow spaces pulsed optical fibre laser device as described in claim 1, which is characterized in that first amplification
The chip model of device and the second amplifier is ths3202.
6. subnanosecond grade narrow spaces pulsed optical fibre laser device as claimed in claim 5, which is characterized in that first amplification
Route between device and the second amplifier is equipped with a PNP pipe, and the emitter of the PNP pipe is connected to the output of the first amplifier
End, the base stage of the PNP pipe are connected to the input terminal of the second amplifier, and the collector of the PNP pipe is hanging.
7. subnanosecond grade narrow spaces pulsed optical fibre laser device as claimed in claim 5, which is characterized in that the seed source is put
Big circuit further includes having a field-effect tube, and the grid of the field-effect tube connects the output end of the second amplifier, the field
The drain electrode of effect pipe and source electrode are separately connected laser and ground.
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| CN201510377084.5A CN104979745B (en) | 2015-07-01 | 2015-07-01 | A kind of subnanosecond grade narrow spaces pulsed optical fibre laser device |
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| CN104979745B true CN104979745B (en) | 2018-12-04 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203839697U (en) * | 2014-04-28 | 2014-09-17 | 深圳激扬光电有限公司 | Waveform adjustable high-power pulse fiber laser |
| CN204760739U (en) * | 2015-07-01 | 2015-11-11 | 深圳市镭神智能系统有限公司 | Narrow pulse width pulsed optical fibre laser device of subnanosecond level |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4975348B2 (en) * | 2006-03-31 | 2012-07-11 | 住友電工デバイス・イノベーション株式会社 | Laser diode drive circuit, electronic circuit, and duty control method |
| US20110280265A1 (en) * | 2010-05-14 | 2011-11-17 | Institut National D'optique | Driver circuit for the direct modulation of a laser diode |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203839697U (en) * | 2014-04-28 | 2014-09-17 | 深圳激扬光电有限公司 | Waveform adjustable high-power pulse fiber laser |
| CN204760739U (en) * | 2015-07-01 | 2015-11-11 | 深圳市镭神智能系统有限公司 | Narrow pulse width pulsed optical fibre laser device of subnanosecond level |
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