CN104979314A - Semiconductor packaging structure and semiconductor technologies - Google Patents
Semiconductor packaging structure and semiconductor technologies Download PDFInfo
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- CN104979314A CN104979314A CN201410139115.9A CN201410139115A CN104979314A CN 104979314 A CN104979314 A CN 104979314A CN 201410139115 A CN201410139115 A CN 201410139115A CN 104979314 A CN104979314 A CN 104979314A
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- substrate
- conductive part
- conductive
- tip
- clad material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to a semiconductor packaging structure and semiconductor technologies. The semiconductor packaging structure comprises a first substrate, a second substrate, a bare chip and a coating material. At least a part of a second conductive part of the second substrate is located inside a groove of a first conductive part of the first substrate. Or at least a part of the first conductive part is located inside the groove of the second conductive part. The bare chip is electrically connected to the first substrate. The coating material is located between the first substrate and the second substrate and wraps the bare chip, the first conductive part and the second conductive part. Relatively great electrical connection between the first conductive part and the second conductive part is thus guaranteed.
Description
Technical field
The present invention relates to a kind of semiconductor package and semiconductor technology.Specifically, the present invention relates to a kind of Stacked semiconductor package structure and semiconductor technology thereof.
Background technology
The manufacture method of conventional stacked semiconductor encapsulating structure is as follows, first, nude film and multiple soldered ball (Solder Ball) is engaged on the upper surface of lower substrate.Then, envelope mold technique (Molding Process) is utilized to form adhesive material on the upper surface of described lower substrate, with coated described nude film and described soldered ball.Then, after solidifying described adhesive material, high-temperature laser is utilized to form multiple opening to appear the top of described soldered ball in described adhesive material upper surface.Then, in storing, substrate is on described adhesive material, soldered ball described in the solder contact making to be positioned at described upper substrate lower surface.Then, carry out first time heating with heating oven, make described solder and described soldered ball melting and form interior coupling assembling.Then, after the lower surface of described lower substrate forms multiple soldered ball, reflow process is carried out.Finally carry out cutting step again.
In described common manufacturing method, when high-temperature laser forms opening in described adhesive material, described high-temperature laser can heat the top of described soldered ball simultaneously, makes the surface on the top of described soldered ball form oxide layer.Therefore, in engaging process, even if still there is described oxide layer between described solder and described soldered ball after heating in the oxide layer of soldered ball described in described solder contact.Because described oxide layer is non-conductive, thus reduce the electric connection effect between described solder and described soldered ball.In addition, when high-temperature laser forms opening in described adhesive material, described high-temperature laser possibly cannot remove the adhesive material on the top being positioned at described soldered ball completely, that is, the described adhesive material of part can remain in described soldered ball top on and form cull.Therefore, in engaging process, between described solder and described soldered ball, there is described cull.Because described cull is non-conductive, thus reduce the electric connection effect between described solder and described soldered ball.
Summary of the invention
This exposure relate in one aspect to a kind of semiconductor package.In one embodiment, described semiconductor package comprises the first substrate, the second substrate, nude film and clad material.Described first substrate has conductive pad and multiple first conductive part on upper surface, multiple first substrate, and wherein said first conducting position is conductive pad on described first substrate.Described second substrate has conductive pad and multiple second conductive part under lower surface, multiple second substrate, the lower surface of described second substrate faced by the upper surface of wherein said first substrate, described second conducting position is conductive pad under described second substrate, and at least partly described second conducting position in the groove of described first conductive part, or at least partly described first conducting position in the groove of described second conductive part.Described nude film is electrically connected to the upper surface of described first substrate.Described clad material is between the upper surface of described first substrate and the lower surface of described second substrate, and coated described nude film, described first conductive part and described second conductive part.
The another aspect of this exposure relates to a kind of semiconductor technology.In one embodiment, described semiconductor technology comprises following steps: nude film is electrically connected to the upper surface of the first substrate by (a), and wherein said first substrate has more conductive pad on multiple first substrate, is revealed in the upper surface of described first substrate; B () forms multiple first conductive part on described first substrate on conductive pad; C () applies the upper surface of clad material in described first substrate with coated described nude film and described first conductive part, wherein said clad material is second rank (B-stage) glue material; D () is formed and is multiplely opened on described clad material to appear described first conductive part; E () pressing second substrate is on described clad material, the lower surface of described second substrate is made to adhere on described clad material, wherein said second substrate has more conductive pad and multiple second conductive part under multiple second substrate, under wherein said second substrate, conductive pad is revealed in the lower surface of described second substrate, described second conducting position is under described second substrate on conductive pad, and described second conductive part inserts in described first conductive part, or described first conductive part inserts in described second conductive part; And (f) carries out heating steps, described clad material is made to be solidified into the third rank glue material.
In the present embodiment, because described second conductive part inserts in described first conductive part, or described first conductive part inserts described second conductive part, therefore can guarantee through described cull and oxide layer, and can guarantee to have between described second conductive part and described first conductive part to be preferably electrically connected effect.
Accompanying drawing explanation
Fig. 1 shows the cross-sectional schematic of an embodiment of semiconductor package of the present invention.
Fig. 2 shows the enlarged diagram of the region A of Fig. 1.
Fig. 3 shows the enlarged diagram of the region B of Fig. 2.
Fig. 4 shows the first conductive part of another embodiment of semiconductor package of the present invention and the cross-sectional schematic of the second conductive part.
Fig. 5 shows the first conductive part of another embodiment of semiconductor package of the present invention and the cross-sectional schematic of the second conductive part.
Fig. 6 to Figure 13 shows the schematic diagram of an embodiment of semiconductor technology of the present invention.
Figure 14 to Figure 18 shows the schematic diagram of an embodiment of the manufacture method of the second conductive part of the second substrate of the present invention.
Embodiment
With reference to figure 1, show the cross-sectional schematic of an embodiment of semiconductor package of the present invention.Described semiconductor package 1 comprises the first substrate 10, second substrate 12, nude film 14, clad material 18 and multiple lower soldered ball 20.
Described first substrate 10 to have on upper surface 101, lower surface 102, multiple first substrate conductive pad 104 and multiple first conductive part 15 under conductive pad 103, multiple first substrate.In the present embodiment, described first substrate 10 is package substrate, and under described first substrate, conductive pad 104 is revealed in the lower surface 102 of described first substrate 10, and on described first substrate, conductive pad 103 is revealed in the upper surface 101 of described first substrate 10.Under described first substrate, conductive pad 104 is electrically connected to conductive pad 103 on described first substrate.Described first conductive part 15 is positioned at conductive pad 103 on described first substrate.In the present embodiment, described first conductive part 15 is soldered ball (Solder Ball) or pre-welding material (Pre-solder).
Described second substrate 12 to have on upper surface 121, lower surface 122, multiple second substrate conductive pad 124 and multiple second conductive part 16 under conductive pad 123, multiple second substrate.The lower surface 122 of described second substrate 12 faced by the upper surface 101 of described first substrate 10.In the present embodiment, described second substrate 12 is package substrate or intermediate plate (Interposer), on described second substrate, conductive pad 123 is revealed in the upper surface 121 of described second substrate 12, and under described second substrate, conductive pad 124 is revealed in the lower surface 122 of described second substrate 12.On described second substrate, conductive pad 123 is electrically connected to conductive pad 124 under described second substrate.Described second conductive part 16 is positioned at conductive pad 124 under described second substrate.In the present embodiment, described second conductive part 16 is cylinder (Pillar), and its material can be copper but not as limit, and described second conductive part 16 inserts in described first conductive part 15, make the two formed in coupling assembling.Described first conductive part 15 is inserted rear formation groove 151 by described second conductive part 16, and described second conductive part 16 is arranged in described groove 151 at least partly.That is, described groove 151 defined by described described second conductive part 16 at least partly, and described described second conductive part 16 is at least partly coated by described first conductive part 15 institute.Distance bound between adjacent two the first conductive parts 15 is decided to be gap (Gap) (Fig. 2).In other embodiments, described first conductive part 15 is cylinder, and described second conductive part 16 is soldered ball or pre-welding material, and so described first conductive part 15 inserts in described second conductive part 16.Described second conductive part 16 forms groove after being inserted by described first conductive part 15, and described first conductive part 15 is arranged in described groove at least partly.That is, described groove defined by described described first conductive part 15 at least partly, and described described first conductive part 15 is at least partly coated by described second conductive part 16 institute.
Described nude film 14 is electrically connected to the upper surface 101 of described first substrate 10.In the present embodiment, described nude film 14 with chip bonding to the upper surface 101 of described first substrate 10.
Described clad material 18 is between the upper surface 101 of described first substrate 10 and the lower surface 122 of described second substrate 12, and coated described nude film 14 and described interior coupling assembling (formed by described first conductive part 15 and described second conductive part 16).Described clad material 18 adheres to the upper surface 101 of described first substrate 10 and the lower surface 122 of described second substrate 12 respectively, and the adhesion between the upper surface 101 of described clad material 18 and described first substrate 10 be approximately identical to described clad material 18 and described second substrate 12 lower surface 122 between adhesion.In the present embodiment, described clad material 18 is non-conductive film (Non Conductive Film, NCF), non-conductive adhesive (Non ConductivePaste, NCP) or ABF (Ajinomoto Build-up Film).In other embodiments, described clad material 18 can be conventional envelope mold materials (Molding Compound).
In addition, in the present embodiment, described clad material 18 has more multiple particle filled composite (Fillers) 182, and described particle filled composite 182 has the particle diameter varied in size, and is uniformly distributed in described clad material 18.Meanwhile, the content (Filler Content) (by weight percentage) of described particle filled composite 182 is also uniform in described clad material 18.It should be noted that, in process, equally distributed particle filled composite 182 can be beneficial to the hole uniformity of carrying out laser drill on described clad material 18, and then improves the uniformity of described interior coupling assembling, and improves the reliability (reliability) of described encapsulating structure 1.In the present embodiment, the average grain diameter of described particle filled composite 182 is less than 5 microns (μm).
Moreover, described particle filled composite 182 must through the flow process of die channel (molding channel), therefore the integral thickness of described clad material 18 can be reduced, particularly the thickness of described clad material 18 between described second substrate 12 and described nude film 14.In one embodiment, the thickness of described clad material 18 between described second substrate 12 and described nude film 14 can be not more than maximum particle diameter size in described particle filled composite 182; In another embodiment, the thickness of described clad material 18 between described second substrate 12 and described nude film 14 is for being less than 20 microns (μm).
For example, region A in figure
1and region A
2represent the clad material 18 in left side and the clad material 18 on right side respectively, wherein region A
1for the limit, the leftmost side of described clad material 18 extends a default distance to the right, described default distance is 10% of described clad material 18 Breadth Maximum, and region A
2for the limit, the rightmost side of described clad material 18 extends described default distance left.Be positioned at region A
1and region A
2the domain size distribution of particle filled composite 182 and content (FillerContent) (by weight percentage) identical.In actual experiment, search domain A respectively
1and region A
2in appoint a fraction of measured zone, wherein said measured zone comprises about 100 particle filled composites, can find region A
1in measured zone and region A
2in measured zone, the domain size distribution of the two and content (Filler Content) (by weight percentage) identical in fact.
Described lower soldered ball 20 is positioned under described first substrate on conductive pad 104, in order to be electrically connected to external module.
With reference to figure 2, the enlarged diagram of the region A of its display Fig. 1.In the present embodiment, described first conductive part 15 is soldered ball or pre-welding material.Described second conductive part 16 is cylinder, and it has base portion 161 and tip 162, and the tip 162 of described second conductive part 16 is inserted in described first conductive part 15 and forms described groove 151.Described base portion 161 to be positioned under described second substrate on conductive pad 124.Described tip 162 is positioned on described base portion 161.Described tip 162 has first end 1621 and the second end 1622, and described first end 1621 is relatively described second ends 1622.Described first end 1621 connects described base portion 161, and the width of described tip 162 is successively decreased to described second end 1622 by described first end 1621, and forms outstanding taper.Described second end 1622 inserts in described first conductive part 15.Because described tip 162 is outstanding taper, described second conductive part 16 can be helped to insert, and described first conductive part 15 deformation quantity can be helped less and not easily extend out, make gap g1 less, the first adjacent conductive part 15 is bridge joint (Bridge) or short circuit (Short) more not easily.In addition, after described second end 1622 inserts described first conductive part 15, the relative position between described second conductive part 16 and described first conductive part 15 can be made to fix, and then the relative position of described first substrate 10 and described second substrate 12 is also fixed, and skew (Shift) can not be produced at the first substrate 10 described in transport process and between described second substrate 12.
Described second conductive part 16 has maximum height H, and described base portion 161 has height h
1, the height h of described base portion 161
1relevant with the rigidity of described second conductive part 16.Described tip 162 has height h
2, the height h of described tip 162
2relevant with the acuity of described second end 1622.Work as h
1≤ H/2, the rigidity of so described second conductive part 16 is better, not easily bends, but if h
1too large, h
2too little, so described tip 162 may be sharp not, not easily inserts in described first conductive part 15.Work as h
2≤ H/2, so described tip 162 is sharper, comparatively easily inserts in described first conductive part 15, but if h2 is too large, the rigidity of so described second conductive part 16 may be too little, easily bends.Therefore, preferably, h
1: h
2for 2:1 to 1:1.In the present embodiment, described second conductive part maximum height H is 60 μm to 120 μm, described base portion height h
1equal described tip height h
2, it is the half (such as: 30 μm to 60 μm) of described second conductive part maximum height H.
Described second conductive part 16 has Breadth Maximum W, and described second end 1622 of described tip 162 has width W
1, 0≤W
1<W/2, that is, W
1be less than the half of W.When identical Breadth Maximum W, W
1less meeting makes described second end 1622 of described tip 162 sharper, and more easily inserts in described first conductive part 15.In the present embodiment, described second conductive part Breadth Maximum W is 60 μm to 120 μm, described second end width W
1be less than 60 μm, or be less than 30 μm.In the present embodiment, described second end width W
1be 10 μm, and the distance between adjacent two the first conductive parts 15 is gap g
1.
In the present embodiment, described tip 162 is inserted and is contacted described first conductive part 15 and form contact site 1623, and described contact site 1623 has height h
3, h
3≤ h
2/ 3.That is, described height h
3be more than or equal to described height h
21/3rd.In the technique of the present embodiment, described clad material 18 need carry out laser drill, with described first conductive part 15 top appeared.But because the clad material 18 above described first conductive part 15 cannot remove by laser processing completely, cause having part clad material 18 and residue in described first conductive part 15 top and form cull.In addition, because of in laser processing procedure, because there being the generation of heat, cause described first conductive part 15 surface oxidation, and form oxide layer and be covered in the first conductive part 15 top.By height h described above
3be more than or equal to described height h
21/3rd design, can guarantee that described tip 162 is through the cull on described first conductive part 15 and oxide layer, and then guarantee to have between described second conductive part 16 and described first conductive part 15 to be preferably electrically connected effect.Because, if described height h
3be less than described height h
21/3rd, so described second conductive part 16 not through the cull on described first conductive part 15 and oxide layer, and may not be electrically connected.
If described second substrate 12 has smiling face's warpage, described second conductive part 16 being so positioned at described second substrate 12 middle position inserts the height h of the described contact site 1623 after described first conductive part 15
3h must be greater than
2/ 2, the height h of the described contact site 1623 after described first conductive part 15 is inserted with described second conductive part 16 guaranteeing to be positioned at described second substrate 12 peripheral position
3be greater than h
2/ 3.In addition, if the length of all described second conductive parts 16 is uneven, so the shortest described second conductive part 16 inserts the height h of the described contact site 1623 after described first conductive part 15
3h must be greater than
2/ 3, to guarantee that other second conductive part 16 inserts the height h of the described contact site 1623 after described first conductive part 15
3be greater than h
2/ 3.
With reference to figure 3, the enlarged diagram of the region B of display Fig. 2.In the technique of the present embodiment, after described first conductive part 15 is inserted in described tip 162, the cull 181 on described first conductive part 15 top can be positioned at described contact site 1623 along with described tip 162, that is, the described clad material of part 18 can remain in described contact site 1623.Described cull 181 is discontinuously arranged.In the present embodiment, described contact site 1623 can divide into Part I I and Part II II, and described Part I I comprises the second end 1622 of described tip 162, and described Part II II is away from the second end 1622 of described tip 162.Preferably, the height of described Part I I is described contact site height h
3half, and the height of described Part II II is described contact site height h
3half.The thickness being attached to the cull 181 of described Part II II is greater than the thickness of the cull 181 being attached to described Part I I.In the present embodiment, the thickness being attached to the cull 181 of described Part II II is greater than 1 μm, and the thickness being attached to the cull 181 of described Part I I is less than 1 μm.In addition, the gap between the cull 181 being attached to described Part II II is less than the gap between the cull 181 being attached to described Part I I.Because cull can't conduct electricity, it can hinder electric connection, and therefore, described Part I I is compared with described Part II II, and the contact area between described tip 162 and described first conductive part 15 is comparatively large, and can guarantee its electric connection each other.
In addition, in the place not having cull 181 to intercept, interface metal compound (Intermetallic Compound can be formed between described tip 162 and described first conductive part 15, IMC) 19 (such as signal bronzes), and the thickness being positioned at the interface metal compound 19 of described Part I I is greater than the thickness of the interface metal compound 19 being positioned at described Part II II.In the present embodiment, the thickness being positioned at the interface metal compound 19 of described Part I I is greater than 1 μm, and the thickness being positioned at the interface metal compound 19 of described Part II II is less than 1 μm.Because described interface metal compound 19 can conduct electricity, it can guarantee to be electrically connected, and therefore, described Part I I, compared with described Part II II, is easier to form better electrical and connects effect.
With reference to figure 4, show the first conductive part of another embodiment of semiconductor package of the present invention and the cross-sectional schematic of the second conductive part.In the present embodiment, the described second end width W of described tip 162
1be 30 μm, and the distance bound between adjacent two the first conductive parts 15 is decided to be gap g
2.Spacing between described first conductive part 15 of the spacing (Pitch) described in the present embodiment between the first conductive part 15 and the embodiment of Fig. 1 is identical, but the gap g of the present embodiment
2be less than Fig. 1 gap g
1, this is because the width W of the second end 1622 of the described tip 162 of the embodiment of Fig. 1
1be less than the width W of described second end 1622 of the described tip 162 of the present embodiment
1therefore the described tip 162 of the embodiment of Fig. 1 is sharper, and be easier to insert in described first conductive part 15, and the first less conductive part 15 is opened in exclusion, makes the first adjacent conductive part 15 more not easily bridge joint (Bridge) or short circuit (short).Therefore, the width W of the second end 1622 of described tip 162
1the more little requirement more easily reaching thin space (Fine Pitch).
With reference to figure 5, show the first conductive part of another embodiment of semiconductor package of the present invention and the cross-sectional schematic of the second conductive part.In the present embodiment, described second conductive part 16 only has described tip 162 and does not have described base portion 161, and the first end 1621 of described tip 162 to be positioned under described second substrate on conductive pad 124.Now, the maximum height H of described second conductive part 16 is the height h of described tip 162
2.
With reference to figure 6 to Figure 13, show the schematic diagram of an embodiment of semiconductor technology of the present invention.With reference to figure 6, provide described nude film 14 and described first substrate 10.Described first substrate 10 to have on upper surface 101, lower surface 102, multiple first substrate conductive pad 104 under conductive pad 103 and multiple first substrate.In the present embodiment, described first substrate 10 is package substrate, and under described first substrate, conductive pad 104 is revealed in the lower surface 102 of described first substrate 10, and on described first substrate, conductive pad 103 is revealed in the upper surface 101 of described first substrate 10.Under described first substrate, conductive pad 104 is electrically connected to conductive pad 103 on described first substrate.Then, described nude film 14 is electrically connected to the upper surface 101 of described first substrate 10.In the present embodiment, described nude film 14 is attached to the upper surface 101 of described first substrate 10 in chip bonding mode.
With reference to figure 7, form multiple first conductive part 15 conductive pad 103 on described first substrate, and described first conductive part 15 is around described nude film 14.In the present embodiment, described first conductive part 15 is multiple soldered ball.But in other embodiments, described first conductive part 15 can be cylinder (Pillar).
With reference to figure 8, provide described clad material 18.In the present embodiment, described clad material 18 is non-conductive film (NonConductive Film, NCF), non-conductive adhesive (Non Conductive Paste, or ABF (Ajinomoto Build-upFilm) NCP), in other embodiments, described clad material 18 can be conventional envelope mold materials (Molding Compound).In the present embodiment, described clad material 18 has multiple particle filled composite (Fillers) 182.Described particle filled composite 182 has the particle diameter varied in size, and is uniformly distributed in described clad material 18.Now, described clad material 18 is in the state of second rank (B-stage) glue material.
With reference to figure 9, apply the upper surface 101 of described clad material 18 in described first substrate 10 with coated described nude film 14 and described first conductive part 15.Now described clad material 18 is still in the state on second rank.In the present embodiment, described clad material 18 utilizes the mode such as pressing or printing to be formed at the upper surface 101 of described first substrate 10 from top to bottom or from bottom to top, therefore, described first conductive part 15 can not affect the flowing of the particle filled composite 182 in described clad material 18, and described particle filled composite 182 must, through the flow process of die channel (Molding Channel), not make described particle filled composite 182 still be uniformly distributed in described clad material 18.
With reference to Figure 10, form multiple opening 183 on described clad material 18 to appear described first conductive part 15 top.In the present embodiment, low temperature laser is utilized to form described opening 183.Now, described clad material 18 is still in the state on second rank.After laser processing, described first conductive part 15 top appeared.But because the clad material above described first conductive part 15 cannot remove by laser processing completely, cause having part clad material 18 and residue in described first conductive part 15 top and form cull.In addition, because of in laser processing procedure, because there being the generation of heat, cause described first conductive part 15 surface oxidation, and form oxide layer and be covered in described first conductive part 15 top.Described cull and described oxide layer are also non-conductive, and it can hinder electric connection.
With reference to Figure 11, provide described second substrate 12.Described second substrate 12 to have on upper surface 121, lower surface 122, multiple second substrate conductive pad 124, multiple second conductive part 125 and multiple second conductive part 16 under conductive pad 123, multiple second substrate.The upper surface 101 of described first substrate 10 faced by the lower surface 122 of described second substrate 12.In the present embodiment, described second substrate 12 is package substrate or intermediate plate (Interposer), on described second substrate, conductive pad 123 is revealed in the upper surface 121 of described second substrate 12, and under described second substrate, conductive pad 124 is revealed in the lower surface 122 of described second substrate 12.On described second substrate, conductive pad 123 is electrically connected to conductive pad 124 under described second substrate.Described second conductive part 16 to be positioned under described second substrate on conductive pad 124.
With reference to figure 11A, the close-up schematic view of region C in display Figure 11.In the present embodiment, described second conductive part 16 is cylinder, and it has base portion 161 and tip 162.Described tip 162 is positioned on described base portion 161.Described tip 162 has first end 1621 and the second end 1622, and described first end 1621 connects described base portion 161, and the width of described tip 162 is successively decreased to described second end 1622 by described first end 1621, and forms outstanding taper.
Described second conductive part 16 has maximum height H, and described base portion 161 has height h
1, the height h of described base portion 161
1relevant with the rigidity of described second conductive part 16.Described tip 162 has height h
2, the height h of described tip 162
2relevant with the acuity of described second end 1622.Work as h
1≤ H/2, the rigidity of so described second conductive part 16 is better, not easily bends, but if h
1too large, h
2too little, so described tip 162 may be sharp not, not easily inserts in described first conductive part 15.Work as h
2≤ H/2, so described tip 162 is sharper, comparatively easily inserts in described first conductive part 15, but if h
2too large, the rigidity of so described second conductive part 16 may be too little, easily bends.Therefore, preferably, h
1: h
2for 2:1 to 1:1.In the present embodiment, described second conductive part maximum height H is 60 μm to 120 μm, described base portion height h
1equal described tip height h
2, it is the half (such as: 30 μm to 60 μm) of described second conductive part maximum height H.
Described second conductive part 16 has Breadth Maximum W, and described second end 1622 of described tip 162 has width W
1, 0≤W
1<W/2, that is, W
1be less than the half of W.When identical Breadth Maximum W, W
1less meeting makes described second end 1622 of described tip 162 sharper, and more easily inserts in described first conductive part 15.In the present embodiment, described second conductive part Breadth Maximum W is 60 μm to 120 μm, described second end width W
1be less than 60 μm, or be less than 30 μm.In the present embodiment, described second end width W
1it is 10 μm.
With reference to Figure 12, apply downforce with the second substrate 12 described in pressing on described clad material 18.Because described clad material 18 is still in the state on second rank, the lower surface 122 of described second substrate 12 can be adhered on described clad material 18, and the adhesion between the upper surface 101 of described clad material 18 and described first substrate 10 be approximately identical to described clad material 18 and described second substrate 12 lower surface 122 between adhesion.According in an embodiment, apply described downforce and be heated to about 80 DEG C simultaneously, now, described clad material 18 is can flow regime, and can fill up any space.In addition, because described clad material 18 does not need reserved die channel (Molding Channel) for its flowing, therefore, by controlling the amount of described clad material 18 and described downforce, the thickness of overall package structure can significantly be reduced.
Now, due to described first conductive part 15 deliquescing because of heated relationship, described second end 1622 of the tip 162 of described second conductive part 16 can insert in described first conductive part 15.As shown in Figure 3, in the present embodiment, described tip 162 is inserted in described first conductive part 15 and forms contact site 1623, now, the cull 181 on described first conductive part 15 top can be positioned at described contact site 1623 along with described tip 162, that is, the described clad material of part 18 can remain in described contact site 1623.Described contact site 1623 has height h
3, h
3≤ h
2/ 3.That is, described height h
3be more than or equal to described height h
21/3rd, whereby, can guarantee that described tip 162 is through the cull on described first conductive part 15 and oxide layer, and then guarantee to have between described second conductive part 16 and described first conductive part 15 to be preferably electrically connected effect.Because, if described height h
3be less than described height h
21/3rd, so described second conductive part 16 not through the cull on described first conductive part 15 and oxide layer, thus may not be electrically connected.
Described cull 181 is discontinuously arranged.In the present embodiment, described contact site 1623 can divide into Part I I and Part II II, and described Part I I comprises the second end 1622 of described tip 162, and described Part II II is away from the second end 1622 of described tip 162.Preferably, the height of described Part I I is described contact site height h
3half, and the height of described Part II II is described contact site height h
3half.The thickness being attached to the cull 181 of described Part II II is greater than the thickness of the cull 181 being attached to described Part I I.In the present embodiment, the thickness being attached to the cull 181 of described Part II II is greater than 1 μm, and the thickness being attached to the cull 181 of described Part I I is less than 1 μm.In addition, the gap between the cull 181 being attached to described Part II II is greater than the gap between the cull 181 being attached to described Part I I.Because cull can't conduct electricity, it can hinder electric connection, and therefore, described Part I I is compared with described Part II II, and the contact area between described tip 162 and described first conductive part 15 is comparatively large, and can guarantee its electric connection each other.
Then, first time heating is carried out with heating oven.Working temperature is now about 245 DEG C.It should be noted that in the process moving to described heating oven, the lower surface 122 of described second substrate 12 has adhered on described clad material 18, and therefore, described second substrate 12 can not offset with described adhesive material 18.In the present embodiment, coupling assembling in described second conductive part 16 has inserted described first conductive part 15 and formed, now, described clad material 18 can contact and coated described interior coupling assembling.
Now, as shown in Figure 3, in the place not having cull 181 to intercept, interface metal compound (Intermetallic Compound can be formed between described tip 162 and described first conductive part 15, IMC) 19 (such as signal bronzes), and the thickness being positioned at the interface metal compound 19 of described Part I I is greater than the thickness of the interface metal compound 19 being positioned at described Part II II.In the present embodiment, the thickness being positioned at the interface metal compound 19 of described Part I I is greater than 1 μm, and the thickness being positioned at the interface metal compound 19 of described Part II II is less than 1 μm.Because described interface metal compound 19 can conduct electricity, it can guarantee to be electrically connected, and therefore, described Part I I, compared with described Part II II, is easier to form better electrical and connects effect.After heating a period of time, described clad material 18 is solidified into the third rank glue material.
With reference to Figure 13, form multiple lower soldered ball 20 under described first substrate on conductive pad 104.Then, reflow is carried out.It should be noted that, now described second substrate 12 is in close attachment to described adhesive material 18 and described first substrate 10, therefore after reflow, described first substrate 10, described second substrate 12, described clad material 18, although described first conductive part 15 and described second conductive part 16 thermal coefficient of expansion (CTE) inconsistent, but because described first substrate 10 and described second substrate 12 are clung by described clad material 18, and described second end 1622 of the tip 162 of described second conductive part 16 inserts in described first conductive part 15, and it is visual as a whole, make the meeting of the buckling behavior of described first substrate 10 and described second substrate 12 consistent (such as: described first substrate 10 and described second substrate 12 are face warpage of crying simultaneously, or be smiling face's warpage) simultaneously.Therefore, described first conductive part 15 and described second conductive part 16 can keep in touch state always and maintain described interior coupling assembling, can improve production reliability and yield whereby.Then, cut, to form multiple semiconductor package 1 as shown in Figure 1.When cutting process, close attachment is on described adhesive material 18 and described first substrate 10 equally for described second substrate 12, and the problem that the stress therefore produced during cutting causes described second substrate 12 to peel off also can not occur.
With reference to figs. 14 to Figure 18, show the schematic diagram of an embodiment of the manufacture method of the second conductive part of the second substrate of the present invention.With reference to Figure 14, provide described second substrate 12.Described second substrate 12 to have on upper surface 121, lower surface 122, multiple second substrate conductive pad 124 and multiple second conductive part 125 under conductive pad 123, multiple second substrate.
Then, form the first photoresist layer 30 (such as: dry film (Dry Film)) on described lower surface 122, wherein said first photoresist layer 30 has multiple opening 301, the corresponding and conductive pad 124 under appearing described second substrate of described opening 301.Then, metal cartridge 40 is formed in opening described in each 301 with plating mode.Described metal cartridge 40 not only fills up described opening 301, and protrudes from described first photoresist layer 30.That is, described metal cartridge 40 has protuberance 41, and described protuberance 41 protrudes from the upper surface of described first photoresist layer 30.
With reference to Figure 15, remove the protuberance 41 of described metal cartridge 40 with lapping mode, make the upper surface copline haply of the upper surface of described metal cartridge 40 and described first photoresist layer 30.
With reference to Figure 16, remove the outer rim of described metal cartridge 40 with etching mode, form described second conductive part 16 to make described metal cartridge 40.Described second conductive part 16 has described base portion 161 and described tip 162.
With reference to Figure 17, remove described first photoresist layer 30 to divest mode (Stripping).
With reference to Figure 18, described second conductive part 16 is etched again, becomes sharper (i.e. W to make described tip 162
1diminish).
Only above-described embodiment is only and principle of the present invention and effect thereof is described, and is not used to limit the present invention.Therefore, those skilled in the art modifies to above-described embodiment and changes still not de-spirit of the present invention.Interest field of the present invention should listed by claims described later.
Claims (23)
1. a semiconductor package, it comprises:
First substrate, it has conductive pad and multiple first conductive part on upper surface, multiple first substrate, and wherein said first conducting position is conductive pad on described first substrate;
Second substrate, it has conductive pad and multiple second conductive part under lower surface, multiple second substrate, the lower surface of described second substrate faced by the upper surface of wherein said first substrate, described second conducting position is conductive pad under described second substrate, and at least partly described second conducting position in the groove of described first conductive part, or at least partly described first conducting position in the groove of described second conductive part;
Nude film, it is electrically connected to the upper surface of described first substrate; And
Clad material, between the lower surface of its upper surface at described first substrate and described second substrate, and coated described nude film, described first conductive part and described second conductive part.
2. semiconductor package according to claim 1, wherein said clad material adheres to the upper surface of described first substrate and the lower surface of described second substrate.
3. semiconductor package according to claim 2, the adhesion between the upper surface of wherein said clad material and described first substrate is approximately identical to the adhesion between the lower surface of described clad material and described second substrate.
4. semiconductor package according to claim 1, the groove of wherein said first conductive part defined by described described second conductive part at least partly, or the groove of described second conductive part defined by described described first conductive part at least partly.
5. semiconductor package according to claim 1, wherein said second conductive part is cylinder, and described first conductive part is soldered ball, and described second conductive part has tip, and at least part of described tip is positioned at the groove of described first conductive part.
6. semiconductor package according to claim 5, wherein said second conductive part has more base portion, and described tip is positioned on described base portion.
7. semiconductor package according to claim 6, described second conductive part has maximum height H, and described base portion has height h
1, h
1≤ H/2.
8. semiconductor package according to claim 5, wherein said tip has first end and the second end, and described first end is relatively described second end, and the width of described tip is successively decreased to described second end by described first end.
9. semiconductor package according to claim 5, wherein said second conductive part has maximum height H, and described tip has height h
2, h
2≤ H/2.
10. semiconductor package according to claim 8, wherein said second conductive part has Breadth Maximum W, and described second end of described tip has width W
1, 0≤W
1<W/2.
11. semiconductor packages according to claim 5, the first conductive part described in wherein said tip contacts and form contact site, described contact site has height h
3, described tip has height h
2, h
3≤ h
2/ 3.
12. semiconductor packages according to claim 5, contact site is formed in first conductive part described in wherein said tip contacts, the described clad material of part remains in described contact site and forms cull, described contact site can divide into Part I and Part II, described Part I comprises the second end of described tip, described Part II is away from the second end of described tip, and the thickness being attached to the cull of described Part II is greater than the thickness of the cull being attached to described Part I.
13. semiconductor packages according to claim 12, wherein said contact site has height h
3, the height of described Part I is h
3half, and the height of described Part II is h
3half.
14. semiconductor packages according to claim 5, contact site is formed in first conductive part described in wherein said tip contacts, described contact site can divide into Part I and Part II, described Part I comprises the second end of described tip, described Part II is away from the second end of described tip, form interface metal Compound I MC between described tip and described first conductive part, and the thickness being positioned at the interface metal compound of described Part I is greater than the thickness of the interface metal compound being positioned at described Part II.
15. semiconductor packages according to claim 1, wherein said clad material is non-conductive film NCF, non-conductive adhesive NCP or ABF Ajinomoto Build-up Film.
16. 1 kinds of semiconductor technologies, it comprises following steps:
A nude film is electrically connected to the upper surface of the first substrate by (), wherein said first substrate has more conductive pad on multiple first substrate, and it is revealed in the upper surface of described first substrate;
B () forms multiple first conductive part on described first substrate on conductive pad;
C () applies the upper surface of clad material in described first substrate with coated described nude film and described first conductive part, wherein said clad material is second rank glue materials;
D () is formed and is multiplely opened on described clad material to appear described first conductive part;
E () pressing second substrate is on described clad material, the lower surface of described second substrate is made to adhere on described clad material, wherein said second substrate has more conductive pad and multiple second conductive part under multiple second substrate, under wherein said second substrate, conductive pad is revealed in the lower surface of described second substrate, described second conducting position is under described second substrate on conductive pad, and described second conductive part inserts in described first conductive part, or described first conductive part inserts in described second conductive part; And
F () carries out heating steps, make described clad material be solidified into the third rank glue material.
17. semiconductor technology according to claim 16, wherein in step (a), described first substrate has more conductive pad under lower surface and multiple first substrate, and under described first substrate, conductive pad is revealed in described first substrate lower surface; More comprise after described step (f):
G () forms multiple lower soldered ball under described first substrate on conductive pad;
H () carries out reflow; And
I () cuts, to form multiple semiconductor package.
18. semiconductor technology according to claim 16, in wherein said step (b), described first conductive part is soldered ball, in described step (e), described second conductive part is cylinder, and described second conductive part has tip, and described tip is inserted in described first conductive part.
19. semiconductor technologies according to claim 18, wherein said tip has first end and the second end, and described first end is relatively described second end, and the width of described tip is successively decreased to described second end by described first end.
20. semiconductor technology according to claim 19, wherein said second conductive part has more base portion, and described tip is positioned on described base portion.
21. semiconductor technologies according to claim 18, in wherein said step (e), described tip is inserted in described first conductive part and forms contact site, and described contact site has height h
3, described tip has height h
2, h
3≤ h
2/ 3.
22. semiconductor technologies according to claim 18, in wherein said step (d), the described clad material of part can remain on described first conductive part and form cull; In described step (e), described tip is inserted in described first conductive part and forms contact site, the described cull of part can be positioned at described contact site, described contact site can divide into Part I and Part II, described Part I comprises the second end of described tip, described Part II is away from the second end of described tip, and the thickness being attached to the cull of described Part II is greater than the thickness of the cull being attached to described Part I.
23. semiconductor technologies according to claim 18, in wherein said step (e), described tip is inserted in described first conductive part and forms contact site, described contact site can divide into Part I and Part II, described Part I comprises the second end of described tip, and described Part II is away from the second end of described tip; In described step (f), between described tip and described first conductive part, form interface metal Compound I MC, and the thickness being positioned at the interface metal compound of described Part I is greater than the thickness of the interface metal compounds content being positioned at described Part II.
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