CN104973603B - Remove the device of the metal impurities of chlorosilane gas and the silicon production system with it - Google Patents

Remove the device of the metal impurities of chlorosilane gas and the silicon production system with it Download PDF

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Publication number
CN104973603B
CN104973603B CN201510456795.1A CN201510456795A CN104973603B CN 104973603 B CN104973603 B CN 104973603B CN 201510456795 A CN201510456795 A CN 201510456795A CN 104973603 B CN104973603 B CN 104973603B
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China
Prior art keywords
cylinder
metal impurities
chlorosilane gas
cooling water
baffle groups
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CN201510456795.1A
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CN104973603A (en
Inventor
曾晓国
万烨
严大洲
杨永亮
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China ENFI Engineering Corp
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China ENFI Engineering Corp
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Abstract

The invention provides a kind of device of metal impurities for removing chlorosilane gas and silicon production system with it.The device of the metal impurities of the removing chlorosilane gas includes:Cylinder;Cooling water jecket, cooling water jecket is set on cylinder, and is formed around the cooling duct of cylinder;Baffling component, baffling component is removably mounted on the connection intracavitary of cylinder, and baffling component is used to delay chlorosilane gas in connection intracavitary flowing.Apply the technical scheme of the present invention can solve metal impurities in chlorosilane gas in the prior art separated out as temperature is reduced and result in blockage equipment and pipeline the problem of.

Description

Remove the device of the metal impurities of chlorosilane gas and the silicon production system with it
Technical field
The present invention relates to field of polysilicon production, in particular to a kind of metal impurities for removing chlorosilane gas Device and the silicon production system with it.
Background technology
At present, in polysilicon production process, more than 90% polysilicon enterprise uses silicon tetrachloride cold hydrogenation technology Accessory substance is handled, the raw material trichlorosilane of production polysilicon is translated into.Silicon tetrachloride cold hydrogenation technology is by metallurgical grade silicon Powder, hydrogen, silicon tetrachloride react under certain temperature, pressure condition under catalyst action, generate trichlorosilane.Due to Contain in raw material metallurgical grade silica flour in metal impurities, therefore the gas (i.e. chlorosilane gas) come out from hydrogenation reactor and contain one Quantitative metal impurities (such as aluminium, iron, nickel).These metal impurities are in the technical process such as follow-up condensation, purification, easily analysis Go out, occluding device, gently then causing the service efficiency of production equipment reduces, the heavy then stability of influence production equipment.
In chlorosilane gas, metal impurities mainly exist in metal chloride form.During high temperature, these metal chlorides It is present in gaseous mode in chlorosilane gas;With the reduction of temperature, metal chloride will be separated out in solid form, pole The wall of production equipment and circulation duct, the equipment that results in blockage and pipeline are easily attached to, normal production is had a strong impact on.
The content of the invention
It is a primary object of the present invention to provide a kind of device of metal impurities for removing chlorosilane gas and with it Silicon production system, to solve the metal impurities in chlorosilane gas in the prior art as temperature reduces precipitation and results in blockage and sets The problem of standby and pipeline.
To achieve these goals, according to an aspect of the invention, there is provided a kind of metal for removing chlorosilane gas The device of impurity, including:Cylinder;Cooling water jecket, cooling water jecket is set on cylinder, and formation is led to around the cooling of cylinder Road;Baffling component, baffling component is removably mounted on the connection intracavitary of cylinder, and baffling component is used to delay chlorosilane gas to exist Connect intracavitary flowing.
Further, baffling component includes the first baffle groups, the second baffle groups, the first baffle groups and the second baffling Plate group is respectively provided with multiple deflection plates, and the first end of each deflection plate of the first baffle groups is connected on the first side inwall of cylinder, Second end of each deflection plate of the first baffle groups and the second side inwall of cylinder have interval, each baffling of the second baffle groups The first end of plate is connected on the second side inwall, between the second end of each deflection plate of the second baffle groups and the first side inwall have Every, and each deflection plate of the first baffle groups and the setting alternating with each other of each deflection plate of the second baffle groups.
Further, baffling component also includes connecting rod, and multiple deflection plates are disposed in connecting rod.
Further, device has and be arranged in parallel between many connecting rods, and many connecting rods.
Further, baffling component also includes grip block and connection ring, and grip block is connected to the first end of connecting rod, even The second end that ring is connected to connecting rod is connect, grip block and connection ring are fixedly connected with cylinder respectively.
Further, the device of the metal impurities of removing chlorosilane gas also includes the first end socket and the second end socket, first End socket is connected to the first end of cylinder, and the second end socket is connected to the second end of cylinder, and offers gas feed on the first end socket, Gas vent is offered on second end socket.
Further, it is provided with expansion joint on cooling water jecket.
Further, exhaust outlet is offered at the top of cooling water jecket, the bottom of cylinder offers condensate discharge mouthful.
Further, at least two support feets are provided with cylinder, support feet is used to support cylinder.
According to another aspect of the present invention there is provided a kind of silicon production system, include the device of removing metal impurities, removing The device of metal impurities is the device of the metal impurities of foregoing removing chlorosilane gas.
Further, silicon production system has the device of the metal impurities of multiple removing chlorosilane gas of series connection.
Apply the technical scheme of the present invention, the device of the metal impurities of the removing chlorosilane gas, which has, to be set on cylinder Cooling water jecket, and dismountable baffling component is provided with cylinder, when chlorosilane gas are passed through the mistake in cylinder and circulated Cheng Zhong, baffling component can delay the flowing velocity of chlorosilane gas, pass through the cooling water and cylinder flowed in cooling water jecket Internal chlorosilane gas heat exchange, makes chlorosilane gas cool, now, because metal chloride is different from the boiling point of chlorosilane, Metal chloride, which is cured, to be separated out and is attached on baffling component, then exports the chlorosilane gas for being stripped of metal impurities. The metal impurities in chlorosilane gas can so be removed before process equipment and pipeline is delivered to, it is to avoid occur equipment and pipe The situation that the metal impurities that road is precipitated are blocked.
Brief description of the drawings
The Figure of description for constituting the part of the application is used for providing a further understanding of the present invention, and of the invention shows Meaning property embodiment and its illustrate be used for explain the present invention, do not constitute inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 shows the structural representation of the embodiment of the device of the metal impurities of the removing chlorosilane gas according to the present invention Figure;
Fig. 2 shows the structural representation of Fig. 1 deflection plate component;
Fig. 3 shows the structural representation of the silicon production system of the device of the metal impurities of the removing chlorosilane gas of series connection Figure.
Wherein, above-mentioned accompanying drawing is marked including the following drawings:
10th, cylinder;11st, the first end socket;
12nd, the second end socket;20th, cooling water jecket;
21st, exhaust outlet;22nd, condensate discharge mouthful;
30th, baffling component;31st, the first baffle groups;
32nd, the second baffle groups;34th, grip block;
35th, ring is connected;40th, expansion joint;
33rd, connecting rod.
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase Mutually combination.Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
As depicted in figs. 1 and 2, a kind of device for the metal impurities for removing chlorosilane gas, the dress are present embodiments provided Put including cylinder 10, cooling water jecket 20 and baffling component 30, wherein, cooling water jecket 20 is set on cylinder 10, and cold But the formation of water leg 20 is around the cooling duct of cylinder 10, and cooling water is circulated in the cooling-water duct with to flowing in cylinder Chlorosilane gas are cooled, and baffling component 30 is removably mounted on the connection intracavitary of cylinder 10, and baffling component 30 is used to prolong Slow chlorosilane gas are in connection intracavitary flowing.
During chlorosilane gas are passed through in cylinder and are circulated, baffling component can delay the flowing of chlorosilane gas Speed, is exchanged heat by the chlorosilane gas in the cooling water and cylinder that are flowed in cooling water jecket, and baffling component is in resistance Hinder chlorosilane gas to absorb the heat of chlorosilane gas during flowing, be then passed in cooling water and take away, make Chlorosilane gas cool, now, because metal chloride is different from the boiling point of chlorosilane, and metal chloride, which is cured, to be separated out and attached On baffling component, then export the chlorosilane gas for being stripped of metal impurities.So can be by chlorosilane gas Metal impurities are removed before process equipment and pipeline is delivered to, it is to avoid occur the metal impurities blocking that equipment and pipeline are precipitated Situation, while improving the purity of chlorosilane so that the better quality of the polysilicon product of production.
As shown in Fig. 2 baffling component 30 includes the first baffle groups 31, the second baffle groups 32, the first baffle groups 31 Multiple deflection plates are respectively provided with the second baffle groups 32, each deflection plate of the first baffle groups 31 is each with the second baffle groups 32 Alternating with each other between deflection plate to set, the first end of each deflection plate of the first baffle groups 31 is connected in the first side of cylinder 10 (it can be that sealing sets or contacts setting between the first end of each deflection plate and cylinder 10, can also be arranged on wall Form with gap), the second end of each deflection plate of the first baffle groups 31 has interval with the second side inwall of cylinder 10, The first end of each deflection plate of second baffle groups 32 be connected on the second side inwall (first end of each deflection plate and cylinder 10 it Between can be sealing set or contact set, the form with gap can also be arranged to), in the present embodiment, cylinder The the first side inwall and the second side inwall of body 10 are two relative arcwalls, the second of each deflection plate of the second baffle groups 32 End has interval with the first side inwall.So, when in chlorosilane gas input cylinder 10, bending is formed between multiple deflection plates Circulation passage, extends the circulation path of chlorosilane gas, and chlorosilane gas can occur in flow process with deflection plate Contact, so that heat transfer occur between chlorosilane gas and deflection plate, then deflection plate is by the heat transfer of absorption to cooling water In be pulled away so that chlorosilane gas cool, the speed that such metal impurities are separated out is faster.
With reference to referring to as depicted in figs. 1 and 2, in order to which each deflection plate is stably installed in cylinder 10, baffling component 30 also include connecting rod 33, and multiple deflection plates are disposed in connecting rod 33.Each deflection plate is connected by connecting rod 33, And it is stably placed in cylinder 10 to form the runner of chlorosilane gas flowing.Further, the removing chlorosilane gas The devices of metal impurities have and be arranged that (preferably, the device has between many connecting rods 33, and many connecting rods 33 in parallel Abreast set between four connecting rods 33, four connecting rods 33, and four connecting rods 33 are pushed up through four of a quadrangle The formation of the connecting rod of point, i.e., four 33 coffin).By each deflection plate formation four point positioning of four 33 pairs of connecting rods come stable Connection so that deflection plate can also keep stable when the pressure by the different directions of chlorosilane gas.
In the present embodiment, baffling component 30 also includes grip block 34 and connection ring 35, and grip block 34 is connected to connection In the first end of bar 33, connection ring 35 is connected on the second end of connecting rod 33.As shown in figure 1, removing chlorosilane gas The device of metal impurities also includes the first end socket 11 and the second end socket 12, and the first end socket 11 is connected in the first end of cylinder 10, Second end socket 12 is connected on the second end of cylinder 10, and has first flange, the first end socket 11 in the first end of cylinder 10 On be also equipped with the second flange that is engaged with first flange, after baffling component 30 is placed in cylinder 10, grip block 34 Outward flange be fitted in first flange, then second flange is just put well to first flange, wherein, the outward flange of grip block 34 On offer through hole corresponding with the bolt hole in first flange, second flange, so, by bolt by first flange and second Flange is connected, so that grip block 34 be clamped.In order that preferably forming close between first flange, grip block 34 and second flange Envelope, seal washer after corresponding junction is installed between first flange, grip block 34 and second flange.The second of cylinder 10 Baffle plate is welded with end, connection ring 35 is abutted with baffle plate, is then connected by bolt by ring 35 is connected with baffle plate.This Sample, grip block 34 and connection ring 35 are fixedly connected with cylinder 10 respectively.
Specifically, offered on the first end socket 11 on gas feed A, the second end socket 12 and offer gas vent B.Chlorosilane In gas inflated body import A input cylinders 10, grip block 34 is then flowed through, then from the curved channel stream of each deflection plate formation Move to the second end of cylinder 10, chlorosilane gas are by connecting ring 35, now, removing fall metal impurities chlorosilane gas by Gas vent B is exported.
During chlorosilane gas are by the device, chlorosilane gas are changed with the cooling water in cooling water jecket 20 Heat, the temperature rise of cooling water, causes cooling water jecket 20 to expand and deform, in order to reduce the deformation of cooling water jecket 20 Amount, therefore, is provided with expansion joint 40 on cooling water jecket 20.The expansion of cooling water jecket is reduced by the effect of expansion joint 40 Amount.
As shown in figure 1, the top of cooling water jecket 20 offers exhaust outlet 21, should the device in chlorosilane gas , it is necessary to first make to be full of cooling water in cooling water jecket 20 before metal impurities carry out removing operation, cooling water is from cooling water jecket 20 water inlet C inputs, the cooling water finished that exchanges heat is exported by delivery port D.(i.e. in the device when just input cooling water The starting stage of start), it is empty in cooling water jecket 20, in order to which the air in cooling water jecket 20 is discharged, therefore, first will Delivery port D valve is closed, and the valve for dropping exhaust outlet 21 is opened, until cooling water be full of after cooling water jecket 20 cooling water from Exhaust outlet 21 is flowed out (because delivery port D is also connected with the other equipment of polycrystalline silicon production line, in order to protect the normal of other equipment Work, therefore, air can not directly be discharged by delivery port D), staff closes the valve of exhaust outlet 21, then by water outlet Mouth D valve is opened, normally remove metal impurities operation.
The bottom of the cooling water jecket 20 of the present embodiment can also be provided with dewatering outlet, when needing in cooling water jecket 20 Cooling water when all bleed off (i.e. when the device is shut down), staff stops conveying into cooling water jecket 20 Cooling water, and dewatering outlet is opened, the cooling water in cooling water jecket 20 is all released from dewatering outlet, so that convenient to cooling water Chuck 20 is cleared up.
The starting stage that exhaust outlet 21 only brings into operation in the device and is filled with cooling water opens, when in cooling water jecket 20 After cooling water, staff then closes exhaust outlet 21, so that device enters the normal operation phase.Normally run in device Phase process in, dewatering outlet is also what is closed, and only after device shutdown, staff is in order to be vented in cooling water jecket 20 Cooling water just open dewatering outlet.
Specifically, the bottom of cylinder 10 offers condensate discharge mouthful 22.After the device is shut down, with cylinder 10 Temperature is gradually reduced, and condensation is had in cylinder 10 condensate liquid, at this moment, and staff beats the valve of condensate discharge mouthful 22 Open, so that condensate liquid all be bled off.
The cylinder 10 of the device of the metal impurities of the removing chlorosilane gas of the present embodiment is cylindrical tube.
At least two support feets are oppositely disposed in order to be stably installed on the device, cylinder 10, support feet is used for branch Support cylinder 10, i.e. support feet are arranged on the bottom of cylinder 10.
According to another aspect of the present invention there is provided a kind of silicon production system, the silicon production system includes foregoing removing The device of the metal impurities of chlorosilane gas.
During production polysilicon is carried out, first the chlorosilane gas of oil-containing metal impurities are taken off using the device Except the operation of metal impurities, the high chlorosilane gas of purity are then delivered to the process that process equipment smelt polysilicon.
In order to by metal impurities remove it is thorough, as shown in figure 3, silicon production system have series connection multiple removing chlorosilanes The device of the metal impurities of gas.In the silicon production system, with two removing chlorosilane gas metal impurities device it Between connection exemplified by, between first device and second device pass through on respective cylinder 10 set connection support feet To be connected, then the gas vent B of first device is connected with the gas feed A of second device, by first dress The delivery port D put is connected with the water inlet C of second device, remaining composition component connected mode and working method with it is single Device it is identical.So, the multiple condensation precipitating metal impurity of the device of the removing metal impurities by series connection, so as to obtain height The chlorosilane gas of purity.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies Change, equivalent substitution, improvement etc., should be included in the scope of the protection.

Claims (11)

1. a kind of device for the metal impurities for removing chlorosilane gas, it is characterised in that including:
Cylinder (10);
Cooling water jecket (20), the cooling water jecket (20) is set on the cylinder (10), and is formed around the cylinder (10) cooling duct;
Baffling component (30), the baffling component (30) is removably mounted on the connection intracavitary of the cylinder (10), the folding Stream component (30) is used to delay chlorosilane gas in the connection intracavitary flowing.
2. the device of the metal impurities of removing chlorosilane gas according to claim 1, it is characterised in that the baffling group Part (30) includes the first baffle groups (31), the second baffle groups (32), first baffle groups (31) and second folding Stream plate group (32) is respectively provided with multiple deflection plates, and the first end of each deflection plate of first baffle groups (31) is connected to institute State on the first side inwall of cylinder (10), the second end and the cylinder of each deflection plate of first baffle groups (31) (10) the second side inwall has interval, and the first end of each deflection plate of second baffle groups (32) is connected to described On second side inwall, between the second end of each deflection plate of second baffle groups (32) and first side inwall have Every, and each deflection plate of first baffle groups (31) and second baffle groups (32) each deflection plate that This is arranged alternately.
3. the device of the metal impurities of removing chlorosilane gas according to claim 2, it is characterised in that the baffling group Part (30) also includes connecting rod (33), and the multiple deflection plate is disposed in the connecting rod (33).
4. the device of the metal impurities of removing chlorosilane gas according to claim 3, it is characterised in that described device has Have and be arranged in parallel between many connecting rods (33), and many connecting rods (33).
5. the device of the metal impurities of removing chlorosilane gas according to claim 3, it is characterised in that the baffling group Part (30) also includes grip block (34) and connection ring (35), and the grip block (34) is connected to the first of the connecting rod (33) End, the connection ring (35) is connected to the second end of the connecting rod (33), the grip block (34) and the connection ring (35) it is fixedly connected respectively with the cylinder (10).
6. the device of the metal impurities of removing chlorosilane gas according to claim 1, it is characterised in that the removing chlorine The device of the metal impurities of silane gas also includes the first end socket (11) and the second end socket (12), the first end socket (11) connection First end in the cylinder (10), second end socket (12) is connected to the second end of the cylinder (10), and described first Offered on end socket (11) and offer gas vent on gas feed, second end socket (12).
7. the device of the metal impurities of removing chlorosilane gas according to claim 1, it is characterised in that the cooling water Expansion joint (40) is provided with chuck (20).
8. the device of the metal impurities of removing chlorosilane gas according to claim 1, it is characterised in that the cooling water Exhaust outlet (21) is offered at the top of chuck (20), the bottom of the cylinder (10) offers condensate discharge mouthful (22).
9. the device of the metal impurities of removing chlorosilane gas according to claim 1, it is characterised in that the cylinder (10) at least two support feets are provided with, the support feet is used to support the cylinder (10).
10. a kind of silicon production system, includes the device of removing metal impurities, it is characterised in that the dress of the removing metal impurities The device of the metal impurities for the removing chlorosilane gas being set to any one of claim 1 to 9.
11. silicon production system according to claim 10, it is characterised in that the silicon production system has the multiple of series connection The device of the metal impurities of the removing chlorosilane gas.
CN201510456795.1A 2015-07-29 2015-07-29 Remove the device of the metal impurities of chlorosilane gas and the silicon production system with it Active CN104973603B (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019514222A (en) * 2016-04-13 2019-05-30 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Exhaust cooling device
KR102306675B1 (en) 2017-05-19 2021-09-28 어플라이드 머티어리얼스, 인코포레이티드 Apparatus for collection of liquid and solid effluents and subsequent reaction into gaseous effluents

Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101628917A (en) * 2009-07-28 2010-01-20 江苏宏达新材料股份有限公司 Method for preparing methyldiphenylchlorosilane and reactor thereof
CN102814086A (en) * 2012-08-10 2012-12-12 中国恩菲工程技术有限公司 Gas filtering apparatus
CN103449449A (en) * 2013-08-30 2013-12-18 中国恩菲工程技术有限公司 Method for preparing trichlorosilane and equipment thereof
CN204824190U (en) * 2015-07-29 2015-12-02 中国恩菲工程技术有限公司 Gaseous metallic impurity's of desorption chlorosilane device and have its silicon production system

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101628917A (en) * 2009-07-28 2010-01-20 江苏宏达新材料股份有限公司 Method for preparing methyldiphenylchlorosilane and reactor thereof
CN102814086A (en) * 2012-08-10 2012-12-12 中国恩菲工程技术有限公司 Gas filtering apparatus
CN103449449A (en) * 2013-08-30 2013-12-18 中国恩菲工程技术有限公司 Method for preparing trichlorosilane and equipment thereof
CN204824190U (en) * 2015-07-29 2015-12-02 中国恩菲工程技术有限公司 Gaseous metallic impurity's of desorption chlorosilane device and have its silicon production system

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