CN104969368B - Surface mount device (SMD) luminescence component and method based on substrate - Google Patents
Surface mount device (SMD) luminescence component and method based on substrate Download PDFInfo
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- CN104969368B CN104969368B CN201380071952.6A CN201380071952A CN104969368B CN 104969368 B CN104969368 B CN 104969368B CN 201380071952 A CN201380071952 A CN 201380071952A CN 104969368 B CN104969368 B CN 104969368B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Disclose surface mount design (SMD) luminescence component based on substrate and associated method.In some respects, the luminescence component can include：Substrate, including the first side with first surface region；First and second electrical contacts, are arranged on the first side of the substrate；And at least one luminescence chip, on first side.In some respects, electric contact area can be less than the half in the first surface region of the first side of the substrate.Component disclosed herein can include low section part or dome, wherein, the ratio between dome height and dome width is less than 0.5.A kind of method for providing component can include：Material panel and LED chip are provided；Liquid airproof agent material is distributed on the panel；After sealant material hardening, the panel is divided into the component based on individual panels.
Description
The cross reference of related application
The application is related to the U.S. Patent Application No. 13/755,993 submitted on January 31st, 2013 and requires that its is preferential
Power, this application is the part for the U.S. Patent Application No. 13/800,260 and 13/800,284 submitted on March 13rd, 2013
Continue, wherein, each aforementioned application require the U.S. Provisional Patent Application No. 61/618,327 submitted on March 30th, 2012 with
And 61/642,995 priority submitted on May 4th, 2012, the full text of these applications is all contained in herein, to make to join
Examine.
Technical field
Theme disclosed herein relates generally to surface mount device (SMD) component and method.More specifically, at this
Theme disclosed herein is related to SMD luminescence components and method based on substrate.
Background technology
Light emitting diode (LED) or LED chip are the solid-state devices for converting electric energy to light.In luminescence component or encapsulation
LED chip can be used, the light for providing the different colours that can be used in various illuminations and optoelectronic applications and pattern.It is luminous
Component can include surface mount device (SMD), and it can be directly installed on the surface of bottom circuit unit or radiator, example
Such as, printed circuit board (PCB) (PCB) or metal-core printed circuit board (MCPCB).SMD can include bottom electrical contact or lead, its quilt
It is configured to be mounted directly on the circuit unit of bottom.SMD can be used in various LED bulbs or lamp applications, and develop into
The sub of incandescent lamp, fluorescent lamp and metal halide high-intensity electric discharge (HID) illumination application.
The manufacturer of LED illumination product, which constantly seeks, reduces the mode of its cost, to provide lower preliminary to client
Cost, and encourage to use LED product.Use identical or the bag with lasting or bigger intensity level of less power
Component containing less original material more can use.
Traditional SMD luminescence components can use in module body and be surrounded by reflector cavity one or
Multiple LED chips.Module body and integrally formed reflector cavity are moulded by identical material, and portion body is usual
Moulded around electrical contact or lead.Separately molded module body and the reflector cavity formed can be with costly and time consuming.So far
Untill the present, currently without installing SMD around single substrate or panel, but generally separately molded current production.
Therefore, even if can commercially use various SMD luminescence components, still need be quick, effective and to lead to
Cross the component and method of lower cost production.In some respects, the SMD components based on substrate can allow with different marks
The component of the customization of line configuration, different LED chip connectivities and/or different optical elements.This component can be single
Piece or multi-chip module, and from the perspective of investment repayment or reimbursemen, terminal user can be made to be easier proof and switched to
LED product is wise.
The content of the invention
According to the disclosure, provide and describe herein with the manufacturability improved and the table based on substrate of customization
Face Mount Device (SMD) luminescence component and method.The component and method being described herein can advantageously show improved place
Reason time, easily property and/or lower processing cost processed.The component being described herein can be very suitable for various applications, example
Such as, personal, industry and commercial lighting application, including (such as) bulb and light fixture product and/or application.In some respects, exist
Component described herein can include improved, lower and/or smaller dome depth-width ratio.This can with low section and more
Small overlay area provides the component with excellent brightness.Therefore, in some respects, the disclosure aim at there is provided based on
The SMD luminescence components and method of substrate, it is allowed to a large amount of different components are produced on panel, without producing taking for custom encapsulation
With.
At least being realized completely or partially by theme disclosed herein can be become by disclosure herein
Obtain these and other targets of the obvious disclosure.
Brief description of the drawings
In the remainder of the description, including referring to the drawings, this is more specifically elaborated to those skilled in the art
The complete and possible disclosure of theme, including its optimal mode, wherein：
Figure 1A to Fig. 1 C shows the perspective of the panel for the substrate being used for according to disclosed in herein in luminescence component
Figure；
Fig. 2 is to show the perspective top view according to the disclosed luminescence component based on substrate herein；
Fig. 3 is to show the sectional view according to the disclosed luminescence component based on substrate herein；
Fig. 4 is to show the perspective top view according to another disclosed luminescence component based on substrate herein；
Fig. 5 is to show the side view according to the disclosed luminescence component based on substrate herein；
Fig. 6 is to show the bottom view according to the disclosed luminescence component based on substrate herein；
Fig. 7 A and 7B are to show the circuit diagram according to the disclosed luminescence component based on substrate herein；
Fig. 8 is to show the top perspective according to disclosed multiple luminescence components based on substrate herein；
Fig. 9 is that the top of another embodiment of the disclosed luminescence component based on substrate for showing that basis is herein is saturating
View；And
Figure 10 is shown according to the disclosed illustrative steps for being used to provide the luminescence component based on substrate herein
Flow chart.
Embodiment
Theme disclosed herein is related to surface mount design (SMD) luminescence component and method based on substrate, for example,
Light emitting diode (LED) component and method based on substrate.The component and method provided herein can show it is improved can
Manufacturing, and there is provided the component of customization, for supporting LED chip and allowing its electrical connectivity, without producing with determining
The expense that the ceramics or Plastic Package of system are associated.
It is interesting to note that the component based on independent substrate and/or substrate can be from bigger material panel (for example, ceramics
Substrate is split), and can allow to be formed on a large amount of different components.In some respects, what is be described herein is luminous
The reflector cavity that component and method need not be arranged on around LED chip carrys out reflected light.In some respects, it is described herein
Luminescence component can include non-metal base plate material, reflect on this (these) material and do not absorb by one substantially
The light of individual or multiple LED chip transmittings.In some respects, the luminescence component being described herein can include passing through surface tension
The optical element for being formed and being held in place.
In some respects, the luminescence component and method being described herein can include low section part, and it, which has, is less than
About 2:Ratio (for example, ratio less than about 0.5) between 1 dome height and dome width.In some respects, herein
The luminescence component and method of description can include low section part, its have less than 0.4 dome height and dome width ratio,
The ratio of ratio less than 0.3 or the dome height less than 0.2 and dome width.In some respects, optical element can be with liquid shape
Formula is arranged on substrate, and can by natural surface tension force limitation without in reflector cavity limitation and/or
Molding.In some respects, optical element is distributed marked downly.
In other respects, the luminescence component and method being described herein can include forming falcate feature.Formed curved
Month shape feature could be arranged to close to before substrate (on) edge of side, and before being cured or hardened, border can be produced,
For the optical element for keeping applying in liquid form.In some respects, the component and method being described herein can include
Optical element with new low depth-width ratio.
In some respects, metal trace or electrical contact can reduce size as far as possible on part substrate, dry to reduce
Disturb light.In some respects, metal trace or electrical contact can be separated with one or more luminescence chips (for example, LED chip), and
And edge close to substrate is could be arranged to, to reduce the interference, absorption and/or potentially blocking of light.In some respects, at least two
The total amount in the aggregate surface region of individual metal trace or electrical contact can be less than the total surface region of the upper surface of substrate about
50%, less than about 40% of region above substrate, or surface area less than substrate about 30%, less than substrate
Surface area about 20%.
In some respects, optical element can be arranged on substrate in liquid form, and the optical element can be by certainly
Right surface tension limitation in reflector cavity without limiting and/or moulding.Therefore, in some respects, optical element can
With including sealant.Sealant can include dome portion, and at least a portion sealant can be arranged on installation LED chip
Similar face and/or deposition trace or electrical contact similar face on.
Now, referring in detail to the possibility of theme herein in terms of or embodiment, shown in figure one or
Multiple examples.Each example is provided, to explain this theme, rather than with being restricted.In fact, being used as one of an embodiment
Bright or description feature of defending oneself can be used in another embodiment, to produce further embodiment.Its purpose exists
In disclosed herein and expected theme covers this modifications and variations.
As illustrated by different figures, for illustrative purposes, structure or some partial sizes are tied relative to other
Structure or part are amplified, therefore it provides these sizes, to illustrate the general structure of this theme.Moreover, with reference to formation in other structures
And/or the structure on part or part, the different aspect of this theme is described.Those skilled in the art will be appreciated that, another
The reference expection for the structure that one structure or part " on " or " on " are formed can intervene extra structure and/or part.Nothing
Need intermediary agent structure or part just formed another structure or part " on " structure or partial reference be described herein as
Formed in the structure or part " upper direct ".Also, it is to be understood that be expressed as " connecting " in part, " attachment " or " coupling "
During to another part, the part can be directly connected to, be attached or coupled to another part, or can have portion of intermediary
Part.On the contrary, when part is expressed as " being directly connected to ", " directly attachment " or " direct-coupling " to another part, without intermediary
Part.
Moreover, the relative terms such as " on ", " on ", " top ", " top ", " bottom " or " bottom " are used to retouch herein
A structure or part and another structure or partial relation are stated, it is such as shown in the figure.It is to be understood that " on ", " on ",
Relative terms such as " tops ", " top ", " bottom " or " bottom " are intended in addition to being included in the direction described in figure, in addition to
The different directions of component.If for example, component upset in figure, then be described as being located at other structures or part " on "
Structure or part be now currently located in the other structures or part " under ".Equally, if the component in figure rotates along axle, that
Be described as being located at other structures or part " on " structure or part be located at other structures or part " side " or " left side ".
Identical numeral represents identical part in the text.
Unless clear and definite narration neither one or multiple parts, otherwise terminology used in this article " comprising ", "comprising" with
And " having " should be interpreted that and be not excluded for the open-ended term with one or more parts.
As used in this article, term " through hole (through-hole) ", " through hole (thru-hole) " and/or " mistake
Hole " is synonym, and represents opening in substrate, is generally equipped with and/or fills up (for example, along one or more side walls)
Conductive material, the conductive material allows have electrically conductive conduits or path between the different layers of component, surface or feature.Term
" exposure " through hole or via, represent that sawing, cut-out, cutting, destruction, etching, exposure, movement etc. promote to be arranged on the gold inside hole
Category exposure on the outer surface of substrate.Therefore, in the outside of component or module board and/or conductive along its outer surface " exposure "
Material.
As used in this article, " material based on ceramics " or belong to " based on ceramics " include it is main by ceramic material
The material constituted is expected, for example, by metal or metalloid and nonmetallic (for example, aluminium nitride, aluminum oxide, beryllium oxide, carborundum)
Component inorganic, the nonmetallic materials that are made." material based on non-ceramic " mainly include metal material, it is main it is organic (for example,
Polymer) material, and/or the main synthesis that can be distributed or mould or semi-synthetic organic solid (for example, plastics).
It can be included according to the luminescence component for the embodiment being described herein based on race's III-V nitride (for example, nitrogen
Change gallium (GaN)) LED chip or laser.It is known that the manufacture of LED chip or laser, and only simply retouch herein
State.LED chip or laser can be manufactured in growth substrates, for example, carborundum (SiC) substrate, for example, by positioned at North Carolina
Na Zhou Du Han Cree companies manufacture and those devices of sale.Herein it is also contemplated that there are other growth substrates, such as simultaneously
And it is not limited to sapphire, silicon (Si) and GaN.In some respects, SiC substrate/layer can be 4H polytype of silicon carbide substrate/layers.
However, it is possible to use other SiC candidate polytypes bodies (for example, 3C, 6H and 15R polytype).Shut out from positioned at the North Carolina state
Rare Cree companies (assignee of this theme) are commercially available suitable SiC substrate, in scientific literature and multiple common
In the United States Patent (USP) of transference, the method for producing this substrate is set forth, these patents include but is not limited to U.S. Patent number
With reference to 34,861；U.S. Patent number 4,946,547；And U.S. Patent number 5,200,022, the complete disclosure of these patents
It is incorporated herein, by reference.Any other suitable growth substrates is expected herein.
As used in this article, term " race's III nitride " represents to be formed in nitrogen and in subgroup III
Those semiconducting compounds between one or more elements (being typically aluminium (Al), gallium (Ga) and indium (In)).The nomenclature
Show binary, ternary and quaternary compound, for example, GaN, AlGaN and AlInGaN.Race's III elements can be combined with nitrogen,
To form binary (for example, GaN), ternary (for example, AlGaN) and quaternary (for example, AlInGaN) compound.These compounds
There can be empirical equation, wherein, a mole of nitrogen is combined with one mole of race's III element altogether.Therefore, formula (for example,
AlxGa1-xN, wherein, 1>x>0) it is generally used for describing these compounds.In suitable scientific literature, reasonably well exploitation and
Report the technology of the epitaxial growth for race's III nitride.
Although the various embodiments of LED chip disclosed herein can include growth substrates, this area
Technical staff be will be appreciated that, can remove crystal epitaxy substrate, including the epitaxial layer of LED chip is given birth to over the substrate
It is long, and independent epitaxial layer may be mounted at substitute carrier substrate or can have it is different from initial substrates it is hot, electric,
On the substrate of structure and/or optical signature.The theme being described herein is not limited to the structure with crystal epitaxy substrate,
And can be combined with the structure for the carrier substrate that epitaxial layer removed and be bonded to replacement from its original growth substrates makes
With.
For example, some realities manufactured in growth substrates (for example, Si, SiC or Sapphire Substrate) according to this theme can be done
The LED chip based on race's III nitride of mode is applied, (has at least two on the phase homonymy of LED chip to provide horizontal device
Individual electrical contact) or vertical means (there is electrical contact on the opposite side of LED chip).Moreover, manufacturing or removing (for example, logical
Overetch, grinding, polishing etc.) after, growth substrates can be kept in LED chip.For example, volume can remove growth substrates,
The forward voltage that vertical LED chip is passed through with the thickness of the LED chip produced by reduction and/or reduction.For example, horizontal device
(with and without growth substrates) can be bonded to (for example, using solder) carrier substrate or printed circuit board (PCB) with flip-chip
Or wire bonding (PCB).Vertical means (with and without growth substrates) can have：First terminal is (for example, anode or the moon
Pole), its weld bonds to carrier substrates, installation pad or PCB；And second terminal (for example, opposite male or female), its
Wire bonding is to carrier substrates, electric component or PCB.In Bergmann et al. US publication 2008/0258130, and
And be in the Edmond of the issue on the 7th of September in 2010 et al. U.S. Patent number 7,791,061, by example, discuss vertical
With the example of horizontal LED chip structure, the complete disclosure of the two patents is incorporated herein, by reference.
One or more LED chips can at least partly be coated with one or more phosphors.Phosphor can be from LED core
A part of light is absorbed in piece and launches the light with different wave length, so that luminescence component is from each of LED chip and phosphor
The combination of middle transmitting light.In one embodiment, luminescence component transmitting is produced by the photoemissive combination of LED chip and phosphor
Raw so-called white light.In an embodiment according to this theme, white luminous component can be by blue wavelength spectrum
Launch the LED chip of light and absorb some blue lights and re-emit light in green, yellow and/or red wavelength spectrum
Phosphor is constituted.Therefore, component can launch white light combination on visible spectrum.In other embodiments, LED chip can
Combined with the non-white light for launching blue light and gold-tinted, such as in U.S. Patent number 7, described in 213,940.Herein it is also contemplated that transmitting
The LED chip of feux rouges or by absorption LED light and launch feux rouges phosphor covering LED chip.
LED chip can use a variety of different methods to scribble phosphor, in entitled " Wafer Level Phosphor
Coating Method and Devices Fabricated Utilizing Method " U.S. patent application serial number 11/
In 656,759 and 11/899,790, a kind of suitable method is described, being incorporated by for the two patents is herein, to make to join
Examine.It is entitled " the Phosphor Coating Systems and Methods for of issue on November 15th, 2011
Light Emitting Structures and Packaged Light Emitting Diodes Including
Phosphor Coating " U.S. Patent number 8,058,088 and entitled " Systems and Methods for
Application of Optical Materials to Optical Elements " part continuation application United States Patent (USP) Shen
Other appropriate methods for coating one or more LED chips please be described in sequence number 12/717,048, the two patents
It is incorporated by herein, by reference.Other method (for example, electrophoretic deposition (EPD)) can also be used, LED chip is coated,
It is entitled that " the Close Loop Electrophoretic Deposition of Semiconductor Devices " U.S. is special
In sharp application serial 11/473,089, a kind of suitable method of EPD is described, being incorporated by for the patent is herein, to make to join
Examine.It is to be understood that can also have multiple LED chips of different colours according to the luminescence component and method of this theme, wherein
It is one or more can be white light emission.
Figure 1A to Figure 10 shows that the SMD based on substrate disclosed herein and description according to this theme lights
The embodiment of component and associated method.Figure 1A to Fig. 1 C is a part for substrate or panel respectively, is typically expressed as PI、PII
And PIII, can be divided, separate and/or be physically segregated by alphabetical A to the S one or more independent substrates represented.
Some aspects, panel PI、PIIAnd PIIICan be in length and/or width than shown further extension, but be
The purpose of explanation, can be merely illustrative a part therein.In some respects, before each substrate A to S is divided into, base
Plate A to S can have photophore, for example, LED chip, trace and/or optical element.In other respects, what process step in office
Before, it is included in before forming trace or electrical contact, before die bonding, before wire bonding and/or before son encapsulation,
Substrate A to S can be split or separate with respective panel.
In some respects, panel PI、PIIAnd PIIIMay each comprise nonmetallic materials, for example, it is transparent based on ceramics
Material, for increasing light emission rate and reflectivity as far as possible.For example, panel PI、PIIAnd PIIIAluminum oxide can be included (for example, oxygen
Change aluminium or Al2O3) substrate or include Al2O3Substrate.Along panel PI、PIIAnd PIIIDotted line represent circuit, along this
A little circuits, can carve paint, sawing, cutting, etching and/or other physically separate, for providing or being formed single substrate A
To S.Single substrate A to S can include at least one general planar shape upper surface, and one or more LED chips are (in Fig. 2
In be that 14) may be mounted on the upper surface.It is interesting to note that the component being described herein can provide the envelope of customization
Dress, these encapsulation are based on substrate and can be provided by the cost of raising and/or by improved physical size.
Single substrate A to S can include arbitrary dimension, shape and/or shape of cross section.For illustrative purposes, show
Show with generally square or rectangular cross-sectional shape single substrate A to S, however, being expected any other herein
Non-rectangular shape.It is interesting to note that individually substrate A to S can be included herein the SMD type emitter group of the customization of description
Part or the component of encapsulation.For example, in some respects, single-chip or multi-chip module can be provided, it can provide with any chi
The component of the trace of very little, shape and/or pattern, and can on single substrate A to a S part and/or around carry
For the component of the LED chip with identical or different color.It is interesting to note that the encapsulation of customization need not be around LED chip
Cavity is formed, this can advantageously reduce the manufacturing cost associated with encapsulation with the component that is described herein of offer and material
Expect cost.It is interesting to note that the component of a large amount of different customizations can be provided, without create customization manufacture ceramic component and/
Or the expense of custom molded plastic assembly.
Panel PI、PIIAnd PIIIOne or more openings, through hole or via can alternatively be included, V is typically expressed as.
For illustrative purposes, it is shown that the via V of automatic adjustment shape, however, it is possible to provide any size, shape and/or horizontal stroke
The hole V of cross sectional shape.Conductive material can be provided in hole V part, for example, metal or metal alloy, for creating conduction
Via.In some respects, via V can be equipped with metal and/or conductive material, for example, silver-colored (Ag), copper (Cu), golden (Au), tin
(Sn) and/or Ag, Cu, Au or Sn alloy, for making the top electrical contact of SMD type component with bottom electrical contact (for example, referring to figure
5) it is electrically connected.In other respects, the conductive material being arranged in via V can expose, to form three that are arranged on component
New electrical contact on surface (for example, referring to 108 in fig .9).
Figure 1A is shown in panel PIOn formed or set via V, so that more than one substrate A to I can share one
Individual via.In some respects, single via V can be shared by multiple substrate A to I.That is, from panel PISplit substrate A to I
When, each via V is segmented into many and/or some and is placed on multiple adjacent substrates.For example, in some sides
Face, via V can be formed as close to panel PICenter line (or line with centerline parallel), so as to along dotted line split base
During plate, the via can be shared by two or more adjacent substrates.That is, the first via in multiple via V could be arranged to
Close to panel PICentre, but separate or split substrate A to I when, the first via can be distributed, so as to the first via setting
To approach each substrate A, B, E and F angle (for example, being divided by least four substrates and shared).It can form multiple via V's
Second via, so as to which in separating base plate A to I, the second via can be distributed, so that the second via is disposed proximate to each substrate
B, C, F and G angle.It is interesting to note that from panel PIDuring middle segmentation, it can reveal along substrate A to I outer surface or side
Go out via V (for example, referring to Fig. 9).
Figure 1B shows the via V to be formed or be set to by adjacent substrate not shared during separation.I.e., in some respects,
Panel PIICan have and not be separated or be divided into some and the multiple via V being placed in multiple adjacent substrates.At some
Aspect, in panel PIIWhen being divided into multiple substrate J to M, each via V forms or kept completely perfect.In some sides
Face, from panel PIIDuring middle separation, via V can be disposed entirely within one in substrate J to M.In some respects, it can give
Each substrate J to M offers more than one hole V, so as to from panel PIIDuring middle segmentation, substrate J to M is included and is arranged on one part
Interior more than one via V.In some respects, each substrate can include two via V, three via V, four via V or
More than four via V.
Fig. 1 C are shown in panel PIIIOn formed or set via V, so that more than one substrate P to S can share one
Individual via.That is, from panel PIIIIt is middle segmentation substrate P to S when, each via V be segmented at least two parts and be placed in
On few two adjacent substrates.For example, in some respects, via V can be formed as close to panel PIIICenter line (or with
The parallel line of heart line), so that when along dotted line separating base plate, the hole can be shared by least two adjacent substrates.That is, it is many
The first via in individual via V could be arranged to close to panel PIIICentre, but separate or split substrate P to S when, can
To distribute the first via, so that the first via is disposed proximate to each substrate P and Q adjacent, opposite side.Multiple mistakes can be formed
Hole V the second via, so as to which when splitting substrate P to S, the second via can be distributed, so that the second via is disposed proximate to often
Individual substrate Q and R adjacent and opposite side.It is interesting to note that from panel PIII, can be along substrate P to the outer of S during middle segmentation
Via V is exposed in surface or side (for example, referring to the via exposed or electrical equipment 108 in fig .9).
Single substrate A to S can include any size, overall shape and/or shape of cross section.For the mesh of explanation
, it is shown that with generally square or rectangular cross-sectional shape single substrate A to S, however, being expected herein any
Other non-rectangular shapes.It is interesting to note that panel and/or single substrate A to S can be included herein the customization of description
SMD type emitter component or the component of encapsulation.In some respects, the component of customization and/or encapsulation can not have reflecting chamber, from
And reduce manufacturing cost.The component of a large amount of different customizations can be provided, these components have by natural surface tension force and its
The optical material (for example, the extra cost being associated without moulded lens) of the dome of adhesion, lens and/or cheese, without
Create the expense of customization manufacture or molding component.
In some respects, panel PITo PIIICan be similar in appearance to the S. Utility for being to submit on October 31st, 2007
Patent application serial number 11/982,275 and/or the U.S. Utility Patent application serial 12/ submitted on April 9th, 2010
Described in 757,891, and/or the method described in above-mentioned application can be used to provide.It is each in these bibliography
Full content is incorporated herein, by reference.
Fig. 2 and Fig. 3 are to show to be indicated generally at the top perspective of 10 luminescence component based on substrate and cut open respectively
View.In some respects, after die bonding and/or wire bonding, but before encapsulation, component 10 can be with panel
(Figure 1A to Fig. 1 C) is separated.In other respects, as described in fig. 8, in encapsulation (for example, forming optical element, dome or saturating
Mirror) after, the component based on substrate can be split.Luminescence component 10 can include the encapsulation based on substrate or substrate, for table
Face Mount Device (SMD) is applied.SMD type component can include electrical contact, generally along the bottom of device, for being connected directly to
External heat sink or such as PCB or MCPCB circuit unit, and/or it is electrically and thermally coupled with it.Luminescence component 10 can include
Based on nonmetallic substrate 12, the substrate and the independent substrate A described in Figure 1A to 1C to S-phase seemingly.Substrate 12 can include
Nonmetallic materials.In some respects, substrate 12 can include the material based on ceramics, for example, transparent ceramic material, for the greatest extent may be used
Maximize light emission rate and reflectivity.In some respects, can be had according to the substrate in any embodiment being described herein
There is desirable thermal conductivity.For example, and without limitation, substrate (for example, substrate 12) can have more than 5W/mK, more than 10W/mK,
Thermal conductivity more than 50W/mK, more than 100W/mK, more than 150W/mK or more than 200W/mK.At more specifically aspect, substrate
Thermal conductivity can be about 20W/mK (+or -5W/mK), for example, when substrate includes aluminum oxide, or the thermal conductivity of substrate can
To be about 170W/mK (+or -5W/mK), for example, when substrate includes aluminium nitride.
In some respects, at least one or more luminescence chip (for example, LED chip 14) can be provided on substrate 12
And/or have substrate support.In some respects, LED chip 14 could be arranged to close to the center of substrate 12.It is described at least one
LED chip 14 can be configured as activation yellow, red and/or green phosphor (not shown), and the phosphor is directly in LED core
Set on piece 14 and/or directly on a part of emitter component 10, for producing cold and/or warm white light output.One
A little aspects, can provide more than one LED chip 14 (for example, seeing Fig. 7 B).In the case of offer, multiple LED chips can be with
Including selection blueness, blue flavescence (BSY), cyan, green, red, yellow, Chinese red or amber group of identical or different face
Color.The LED chip 14 of random color can be provided.In some respects, LED chip 14 can pass through index-matched adhesive or ring
Oxygen material (not shown) is directly connected to and/or to be mounted directly in non-metal base plate 12 of the part based on ceramics.In some sides
Face, LED chip 14 can be by silicones or the material based on epoxy resin is attached directly to a part of substrate 12.In its other party
Face, optional material layer (not shown) can be arranged between substrate 12 and LED chip 14.
Luminescence component 10 may further include at least one metal trace or electrical contact, be typically expressed as 18, and it can be with
Set and separated with LED chip 14 along the top side of substrate 12 or top surface.In some respects, luminescence component 10 can be wrapped respectively
Include the first and second electrical contacts 18 and 20 of opposite electric polarity, its be configured as making electric current enter in LED chip 14 and
Flowed out from LED chip 14, cause illumination.In some respects, in the first and second electrical contacts 18 and 20 each can be complete
It is arranged on the top side of substrate 12 or top surface, and can separates.In some respects, LED chip 14 can pass through wire bonding
22 electrical communications to the first and second electrical contacts 18 and 20.As shown in FIG. 9, metal trace (for example, or exposed via)
It can also be extended downwardly between the top surface of substrate 12 and bottom surface along side.
In some respects, LED chip 14 can have the gap from or around the chip, so as to nearby without gold
Category.In an example, as metal trace electrical contact 18 and 20 can with LED chip 14 at a distance of some distance, so as to
There is no metal trace in 100 μm of LED chip 14.
Component 10 may further include one or more elements, the infringement for being protected from static discharge (ESD).
In the embodiment shown, Esd protection device 26 may be mounted on a part of second electrical contact 20 and by lead
22 wire bondings are engaged to the first electrical contact 18.ESD protective device 26 can include vertical devices, the device reverse biased or
LED chip 14 is electrically connected to reversed polarity.ESD protective device 26 can (for example) include vertical silicon (Si) Zener diode, double
Back-to-back Zener diode, it is be arranged in parallel from LED chip 14 and different LED chips, the surface mount of reverse biased are pressure-sensitive
Resistance and/or transverse direction Si diodes.It can use any of material and/or technology that ESD protective device 26 is installed.ESD is protected
Protect device 26 can be less than LED chip 14, do not covered so as to the device on the surface of substrate 12 cross multizone, and so as not to
Block and/or absorb a large amount of light.In addition to LED chip 14, also by providing the path replaced, ESD protections to electric current flowing
Device 26 can prevent excessive electric current from passing through component 10 from ESD activities.
Wire bonding 22 can include any suitable conductive material, for example, Au, Ag, Al, Sn, Cu, its alloy, and/or
It is combined.It is to be understood that in other embodiments, the component according to this theme can be provided, without ESD protective device
26, or with the ESD protective device 26 positioned at the outside of component 10.It is interesting to note that ESD protective device 26 can also be placed in
Close to the outmost edge of substrate 12, therefore, reduce and/or reduce as far as possible to any adverse effect of light output (for example,
Obstruction, absorption etc.).
As shown in Fig. 2 dotted lines, in some respects, substrate 12 can but not necessarily include falcate keep feature or
Falcate feature is formed, M is typically expressed as, it is disposed proximate to the border of substrate 12, the border is suitable for being limited in substrate
Liquid matrix sealant material in 12 border.For example, in some respects, can include height into falcate feature M can be with
Print screen edge, ledge, bead, passage or the border ignored, it applies close to the edge of substrate 12, in solidification
Or before cure step, physically keep putting on optical component in the edge of substrate 12 in liquid form (in Fig. 4
44).For example, physically and/or chemically performance can be included by forming falcate feature M, it is suitable for limitation close to the side of substrate 12
The edge of the optical element (for example, in Fig. 4 44) of edge, and when with liquid form and before the hardening, do not permit
Perhaps optical element exceedes or spilt the outermost layer top edge of substrate 12.In some respects, forming falcate feature M can include
Close to substrate 12 edge position polymer or it is a lot of do not moisten or hydrophobic material, as shown by dashed lines, if so as to
And when applying in liquid form, optical element has the border at the edge generally even with substrate.In some respects,
(for example) passage, projection, grid, the boundary characteristic of protrusion, reduction or steel seal can be included by forming falcate feature M.
Some aspects, forming falcate feature M can be set only along two opposite edges of substrate 12.In other respects, form curved
Moon shape feature M can be set along four edges of substrate 12, as shown in the figure.
As shown in figure 3, in some respects, the first and second electrical contacts 18 and 20 can be used in one or more be arranged on
The through hole or via 28 in portion and respective first and second bottom electrical contact 30 and 32 electrical communications.According to being placed on panel (example
Such as, Figure 1B) in mode and panel be subdivided into the mode of independent substrate, via 28 can prolong inside a part of substrate 12
Stretch.For example, as illustrated, via 28 can be fully located at a part of substrate 12 internal, perfect and/or be completely contained in one
In part substrate 12, or in other respects, it can distribute and expose via 28, so that via is along one or many of substrate 12
Individual outside sets (for example, seeing Figure 1A, 1C and 9).Via 28 can include conduit, in first and second top electrical contact
Electric current is transmitted between 18 and 20 and respective first and second bottom electrical contact 30 and 32.Therefore, via 28 can also include leading
Pipe, for electric current access to and from the LED chip 14 in component 10.
Referring generally to Fig. 2 and Fig. 3, in some respects, substrate 12 can include from big nonmetallic panel (for example,
Panel P in Figure 1A to 1CI、PIIAnd PIII) segmentation a part of material, however, herein it is also contemplated that independently form and/
Or the substrate of pressing.Generally, substrate or substrate 12 are preferably provided, it has high reflectance to visible ray (for example, more than about
90%) and thermal conductivity and mechanical support can be provided.In some respects, comprising Al2O3Nonmetallic and/or ceramic material
Show this desirable quality.Therefore, substrate 12 can include the body of material based on ceramics, for example, Al2O3And/or comprising
Al2O3。
In some respects, substrate 12 can include can be by LTCC (LTCC) material or HTCC
(HTCC) ceramic body of material and the cast of correlation.In one embodiment, substrate 12 can be by light green color ceramics
Band is individually cast, then, is fired.Substrate 12 can also be cast, then, be fired, and with being made up of light green color ceramic band
Substrate panel segmentation.In a situation of use where, ceramic band can be included in any ceramic filler material as known in the art
Material, for example, substrate 12 can include glass ceramics, for example, the Al with 0.3 to 0.5 glass frit percentage by weight2O3Or
Aluminium nitride (AlN).In firing ceramics band, glass frit can be used as adhesive and/or sintering inhibitor in ceramic band.
In some respects, it is molten by cast glass frit, ceramic packing, one or more additional adhesives and volatility
One thick-layer slurry dispersion of agent, can form green ceramic band.Cast layer can be heated at low temperature, molten to remove volatility
Agent.Green ceramic band for substrate 12 can advantageously comprise desired any thickness, so as to when needed, cause thinner
Size.Substrate 12 may further include the ceramic material with any of the various various scattering particles being contained within
Material.The example of suitable scattering particles can (for example) include Al2O3、TiO2、BaSO4、ZrO2And/or AlN particle.Substrate 12
Can be available and including from the commercially available production of the said firm by being located at the CoorsTek companies stepped on of state of Colorado Gu in general headquarters
Film or thick film process the technology manufacture of product.This substrate or substrate 12 can be with other materials (for example, zirconium oxide or ZrO2)
Fire together, further to improve optically and mechanically performance.After firing and/or sintering, LED chip can be installed and put base
Plate.
Substrate 12 can include any suitably sized, shape, direction and/or configuration.For illustrative purposes, show
Generally square substrate 12, however, the substrate of expected any shape herein.For example, herein it is also contemplated that generally square
Shape, annular, ellipse, circle, rule, any one in irregular or asymmetrically shape substrate.Substrate 12 can (example
As) include：Generally square or rectangular shape, it has at least about 25 millimeters (mm) or at least one smaller side, example
Such as, about 20mm or smaller, about 15mm or smaller, about 10mm or smaller, about 6mm or smaller, about 3mm or smaller,
About 2mm or smaller；And/or the substrate of at least one side with about 1mm or smaller.For example, substrate 12 can include
About 2mm or smaller thickness, for example, about 1mm or smaller, about 0.5mm or smaller or about 0.25mm or smaller.
In some respects, substrate 12 can include it is square, its have be about 3mm length and width and 0.635mm thickness.
It is further illustrated such as Fig. 2 and Fig. 3, LED chip 14 can include generally straight and/or inclined (for example, into oblique
It is slope or inclined-plane) side, and any shape, size, dimension, structure, construction and/or color can be included.It can also make
With more than one LED chip 14 (for example, referring to Fig. 7 B).In a situation of use where, multiple chips can include identical shape,
Size, dimension, structure, construction, color and/or its combination, or different shape, size, dimension, structure, construction, color and/
Or its combination.LED chip 14 can include growth substrates or carrier substrates, and can include vertical stratification chip (for example,
Anode and negative electrode on the apparent surface of LED chip 14) or horizontal structure chip (for example, the anode in similar face
And negative electrode).For illustrative purposes, the LED chip 14 of horizontal structure is shown, wherein, anode and negative electrode can be arranged on tool
Have on the upper surface of form of two bond pads.However, the two contacts (for example, anode and negative electrode) can be arranged on LED
On the lower surface of chip 14 and/or it is additionally arranged in relative upper and lower surface.
LED chip 14 can include arbitrary dimension and/or shape.LED chip 14 can generally be square, rectangle, rule
Then, irregular or asymmetrically shape.In some respects, for example, LED chip 14 can include footprint (footprint), its
In, at least one side dimension is about 1000 μm or smaller, for example, about 900 μm or smaller, about 700 μm or smaller, big
About 600 μm or smaller, about 500 μm or smaller, about 400 μm or smaller, about 300 μm or smaller, about 200 μm or more
Small, about 100 μm or smaller and/or its combination, wherein, use multiple LED chips 14.It is expected that LED chip 14 has any chi
It is very little.
In some respects, the first and second electrical contacts 18 and 20 and/or the He of respective first and second bottom electrical contact 30
32 can be deposited or be electroplated by plating or electroless plating technology.For example, the first and second electrical contacts 18 and 20 and/or respective
First and second bottom electrical contacts 30 and 32 can include one or more layers Cu, titanium (Ti), nickel (Ni) Ag, chemical plating Ag, Au, change
Learn nickel plating leaching golden (ENIG), Sn, palladium (Pd), electrolyte or submergence Au or can be by depositing operation (for example, physical deposition, splashing
Penetrate, electron beam or plating) and/or chemical plating process application any other material.In layer that can be on top of each other apply or
The different metal level of coating.For example, Ti layers can be deposited directly on substrate 12, and can scribble one or more layers Ag and
Cu.In other respects, different and/or alternate metal level can be applied on substrate 12.The He of first and second electrical contact 18
20 and/or respective first and second bottom electrical contact 30 and 32 can individually or Ti, Ni, Cu and/or Au with plating
Further comprise one or more layers Ag in combination with layer.
In other respects, the first and second electrical contacts 18 and 20 and/or the He of respective first and second bottom electrical contact 30
32 can include being connected to by adhesive, solder, adhesive, epoxy resin, paste, silicones or any other material
The metallic object or portion of material of substrate 12.In further aspect, the first and second electrical contacts 18 and 20 and/or respective first He
Second bottom electrical contact 30 and 32 can include that the metallic object burnt in green ceramic band and then altogether with substrate 12 or portion can be pressed into
Divide material.In other even further aspects, can by HTCC substrates or panel silk-screen printing and firing
Conductive paste, applies the first and second electrical contacts 18 and 20 and/or respective first and second bottom electrical contact 30 and 32.At some
Aspect, can use conductive Ag pastes, for example, the silver paste #7095 being commercially available from DuPont Electronics.
As shown in Figures 2 and 3, component 10 can include SMD, and it can advantageously allow for the first and second bottom electrical contacts
On 30 and 32 radiator or power supply (not shown)s mounted externally and with its electrically or thermal communication.In some respects, first
It can be configured as with the second bottom electrical contact 30 and 32 by making electric current electric into respective first and second by via 28
Contact 18 and 20, to make electric signal or electric current from the external power source (not shown) of such as circuit board, PCB, MCPCB or other power supplys
It is middle to enter in one or more LED chips 14.
The part of first and second electrical contacts 18 and 20 can be welded, welding, gluing or physically, electrically
And/or it is thermally coupled to external power source (not shown).The electricity passed through in reception between respective upper and lower portion electrical contact or trace
During stream, LED chip 14 can be illuminated.In some respects, one group of respective upper and lower contact (for example, first electrical contact 18 and 30)
Anode can be included, and corresponding another group (for example, second electrical contact 20 and 32) can include negative electrode.Anode and negative electrode can
To be configured as electrically connecting with LED chip 14 by wire bonding 22.
In some respects, the first wire bonding 22 can be connected to the first electrical contact 18, and the second wire bonding 22 can
To be connected to the second electrical contact 20.I.e., in some respects, LED chip 14 can have horizontal structure.In other respects, lead
One end of engagement 22 can be configured as and be arranged on electrical contact (for example, bond pad) in LED chip 14 physically simultaneously
And electrically connecting.The opposite end of wire bonding 22 can with relative electrical contact (for example, the first and second electrical contacts 18 and
20) connecting physically and electrically, and/or be directly or indirectly attached to relative electrical contact.Wire bonding 22 can be with
Including any suitable conductive material, for example, metal, in some respects, electric wire include golden (Au) or Au alloys.
It is interesting to note that the first and second electrical contacts 18 and 20 can include different size and/or shapes.In some sides
Face, the first electrical contact 18 can include the second leg section for being arranged on the Part I on via 28 and extending therefrom
Point.The part of extension can extend towards ESD chip 26, and can allow shorter wire bonding 22, so as to advantageously subtract
Few failure as caused by the rupture of long wire bonding 22.In some respects, the second electrical contact 20 can include square or square
Shape pad, the pad is arranged on via 28 and with the size of support ESD chip 26.In some respects, in LED chip
Wire bonding 22 between 14 and contact and/or ESD chip 26 and contact can include generally reclinate loop and/or
The electric wire of bottom accumbency, for example, being the U.S. that is CO-PENDING and co-owning and convey that September in 2012 is submitted on the 7th
Patent application serial number 13/607, the wire bonding described in 217, being incorporated by for the patent is herein, by reference.
It is interesting to note that the first and second electrical contacts 18 and 20 include less table relative to the surface area of substrate 12
Face region or metal part.In some respects, because the region that can absorb light (for example, metal trace) is reduced or minimized,
So smaller trace or contact can promote brighter component.It is interesting to note that the first and second electrical contacts 18 and 20 may be used also
To be placed in LED chip 14 at a distance of some distance and close to the outermost edge of component 10, for reducing or subtracting as far as possible
Small interference light.
In some respects, it can be included with first surface region according to the substrate of any embodiment herein
First side, and first surface region can be included in the electric contact area on first surface region.Total electric contact area can
With completely by or at least partly constituted and (formed) by the first and second electrical contacts.Therefore, on the one hand, total electric contact area
It can be only the sum of the first and second electric contact areas.On the other hand, total electric contact area can be first and second
Electric contact area adds the sum of any extra electric contact area.Total electric contact area can be less than the of the first side of substrate
The half of one surface region, is described further below.
In some respects, substrate 12 can include about 3mm x 3mm length and width or about 9mm2Surface
Area.In some respects, the first and second electrical contacts 18 and 20 jointly can be including being less than the surface area of substrate 12 about
Half (50%) is (for example, less than about 4.5mm2Total surface area), less than substrate 12 surface area about 40% (example
Such as, less than about 3.6mm2Total surface area), less than substrate 12 surface area about 30% (for example, less than about
2.7mm2Total surface area) or surface area less than substrate 12 about 20% (for example, less than about 1.8mm2It is total
Surface area) total surface area.
In some respects, the first and second electrical contacts 18 and 20 can along substrate 12 same edge and be spaced apart
Ground is set.In some respects, two vias 28 can also be set along the same edge of substrate 12.ESD device 26 can be set
On the second electrical contact and be connected to the first electrical contact 18 extension leg portion.Leg portion can include from
The extension that the main part of at least one via 28 starts, and main part can be thicker than leg portion.At some
Aspect, the size of the first and second electrical contacts 18 and 20 can be minimized.
It is interesting to note that the technology being described herein allows general planar shape substrate 12 to be formed as a large amount of different
And/or encapsulation or the component of customization, the expense that the encapsulation with customizing manufacture will not be caused associated.It is interesting to note that this skill
Art also allows need not be with providing the low section component 10 of the associated formation of reflector cavity and/or cost.As described above, example
Such as, component 10 can include the luminescence component (substrate e.g., including based on ceramics) based on ceramics, for providing the light improved
Scattering and reflection, therefore it provides the efficiency, brightness and the light emission rate ability that improve.Substrate based on ceramics can also be preferably
For in the luminescence component that is described herein, the heat management performance for raising.For example, HTCC Al2O3Material shows phase
To low thermal resistance, low humidity sensitiveness, excellent reliability and excellent heat-sinking capability in high temperature environments.It is worth noting
Ground, changes in trace (for example, first and second electrical contacts 18 and 20), via 28, LED chip 14 and/or ESD protective device 26
The size of any one, shape, quantity, arrangement and/or position, can allow to form a large amount of different sizes on substrate 12
And/or the customizable component of shape.In addition, as described below, make substrate before or after bigger panel segmentation, can also be
Customization, distribution optical component is provided on substrate.
Fig. 4 to Fig. 6 shows another embodiment for the luminescence component for being typically expressed as 40, and the luminescence component can be
Form and functionally similar to component 10, but may further include optical component.In some respects, component 40 can include
Substrate 42, for support be indicated generally at 44 optical element and one or more LED chips 46.Optical element 44 can be with
Including dome or lens, and can be transparent, translucent or opaque.For illustrative purposes, due to from component 40
Outside can not see this feature completely, so being arranged under dome 44 and/or following part is represented by dashed line.
In some respects, optical element 44 can include (for example) domed shape, for producing certain shape or light beam mould
The light transmitting of formula.In some respects, can with but not necessarily moulded and/or solidification optical element 44 using known technique.That is,
In some respects, optical element 44 can include sealant, and sealant can include dome or lens component, and at least
A part of sealant can be arranged on install LED chip similar face and/or can deposit trace or first and second electricity touch
In the similar face of head.In some respects, optical element 44 can directly and/or indirectly be formed upper surface in substrate 12 it
On, and can be arranged at least one LED chip 46.The array of lens, dome or optical element 44 can be in LED core
On the respective array of piece 14 and/or substrate panel appropriate section (for example, the P in Figure 1A to 1CI、PIIAnd PIII)
On molding and/or position.
It is interesting to note that in some respects, it is impossible to mould optical component 44.I.e., in some respects, optical element 44 can be with
Including silicones matrix, sealant or plastic material, it can deposit or distribute directly on substrate 12, and nothing takes time or expense
For being molded lens.It is interesting to note that optical element 44 can include dome depth-width ratio improve and/or reduction, this can
To advantageously allow for the outermost edge that optical element 44 is at least extending substantially to substrate 42, while by with liquid form
Surface tension adhered to it.In some respects, optical element 44 can extend fully into the outermost edge of substrate 42.With
Afterwards, optical element 44 can solidify.In some respects, optical element 44, which can be overturned, distributes and alternatively solidifies, with new city
Substantially convex-shaped is round-shaped.In some respects, optical element 44 can substrate 42 and/or substrate panel (for example, figure
Panel in 1A to 1C) on distribute, the panel of substrate 42 and/or substrate is adhered to by surface tension, then, solidification.
Optical element 44 can provide the environment and/or mechanical protection of luminescence component 40.Can be directly one or more
On LED chip 46 and/or on one or more surfaces (for example, inner surface or outer surface) of optical element 44, apply
Optional optical transition material layer (not shown), for producing cold and/or warm white light output.Optical transition material can include can
With by the one or more phosphors for the photoactivation launched from one or more of LED chips 46 or illuminator (for example, yellow
Color, red and/or green phosphor).In some respects, when optical element 44 has liquid form, optics can be provided and turned
Conversion materials, and when optical element 44 solidifies, the material is distributed in it.
With in component 10, component 40 can include the electrical contact of ESD protective device 50 and first and second respectively
52 and 54.ESD protective device 50 can be (relative with lower surface thereon but not necessarily include vertical structure device
Bond pad).ESD protective device 50 can be with reverse biased at least one LED chip 46.LED chip 46 can pass through lead
Engagement 48 is electrically connected to the first and second electrical contacts 52 and 54 respectively.First and second electrical contacts 52 and 54 can include opposite
Electric polarity (for example, anode and negative electrode).
In some respects, component 40 may further include the via 56 extended inside substrate 52, for making the first He
The electrical connection of second electrical contact 52 and 54 to the first and second bottom electrical contacts 58 and 60 (Fig. 5), with figure 3 illustrates it is foregoing
The via 28 of component 10 is similar.In some respects, LED chip 46 can include horizontal chip, and the horizontal chip is in LED chip 46
Upper surface on have opposite electrical polarities (for example, anode and negative electrode with bond pad form) two electrical contacts, so as to
The upper surface of chip can be each into the first and second electrical contacts 52 and 54 with wire bonding.First and second electrical contacts can be with
Electric current is set to enter in LED chip 46, for illuminating LED chip 46.As shown in figure 4, the first and second electrical contacts 52 and 54 can be with
Including the design of different shapes, size and/or surface.
Now, reference picture 5, in some respects, LED chip 46 can be set close to the center line CL of component 40.At some
Aspect, component 40 can include substrate 42, the thickness or substrate height H of the substrate1(for example) it is about 0.05mm or bigger, is
About 0.1mm or bigger, it is about 0.5mm or bigger or more than about 0.6mm.
For example, in some respects, optical element 44 can include dome height H2, it is about 0.4mm or bigger, about
0.45mm or bigger, about 0.55mm or bigger, about 0.6mm or bigger or about 0.65mm or bigger.In some respects,
Substrate height H1With dome height H2Ratio can be about 1:1 (that is, than 1).I.e., in some respects, substrate height H1With dome
Height H2Ratio can be about 0.05 or bigger, about 0.90 or bigger, about 0.94 or bigger or about 0.96 or more
Greatly.Optical element 44 can include generally convex surface；However, herein it is also contemplated that with concave surface, rough surface,
And/or any combinations of spill, convex and/or rough surface.
As further illustrated in fig. 5, and in some respects, optical element 44 can extend to the outermost edge of substrate 42
And/or it is extending substantially to the outermost edge of substrate 42.Optical element 44 can be including approximately equivalent with the width of substrate 42
Width.That is, for example, optical element 44 can include about 1mm or bigger, about 2mm or bigger, about 3mm or bigger and/or
About 5mm or bigger width.In some respects, optical element 44 and substrate 42 may each comprise about 3mm width.Cause
This, in some respects, optical element 44 can include about 0.2 or bigger dome height H2With the ratio of width, Huo Zhe little
In 2:1 dome height and the ratio of width.I.e., in some respects, for example, optical element 44 can include less than about 0.5, it is small
In about 0.4, the dome height H less than about 0.3, and/or less than about 0.22With the ratio of width.It is interesting to note that at this
Component described in text can include low section part, for example, with less than 2:1 dome depth-width ratio.This beyond the consideration, and
And the component for advantageouslying allow for customizing has smaller design in identical intensity level, while improving Yi Zhixing.For example, tool
The component for having small height-width ratio can advantageously allow for optical element 44 and be bonded to substrate 42 by surface tension simultaneously by distribution
Edge encapsulate, this can be avoided time with moulding optical component associated and/or expense.It is interesting to note that changing circle
Heights of roofs H2, the customizable component that a large amount of different size and/or shapes are formed on substrate 42 can be allowed.
As further illustrated in fig. 5, in the cross-section, optical element 44 includes section.In some respects, optical element 44
The Part I of section or the first section SIThe part generally bent can be included.Bent portion can generally be convex,
And extend close to the center top part of optical element 44, for example, around center line CL either side.In some respects, light
Learn the Part II or the second section S of the section of element 44IIGeneral linear or straight part can be included.That is, in some sides
Face, optical element 44 can generally be bent on the top section of dome, and dome from center line CL (for example, towards base
The edge of plate 42) extend more remote, curvature can just reduce and become generally straight.In some respects, optical element 44
It is un-flexed, close to the outside or outward flange of substrate, such as Part II SIIIt is shown.
Fig. 6 shows the bottom or the back side of luminescence component 40.One or more bottom electrical contacts can be arranged on substrate 42
Downside on, the downside with can install or chip connection LED chip side it is relative.In some respects, electric via 56 can be with
The first and second electrical contacts (that is, 52 in Fig. 4 and 54) are made to be electrically connected to the He of respective first and second bottom electrical contact 58
60.First and second bottom electrical contacts 58 and 60 can be deposited by plating and/or chemical plating process.In some respects, substrate
42 lower surface can include many more than two contact with many more than two hole 56, and it is tactile to include many more than two top
Head, can individually handle various parts (for example, multiple LED of different colours).In some respects, the first and second bottoms electricity
Contact 58 and 60 can be deposited by plating and/or chemical plating process.In some respects, electrical contact 58 and 60 can include one layer
Or multilayer material, for example, one or more layers Au, Sn, Ti, Ag, Cu, Pd, ENIG and/or any alloy or its combination.Electrical contact
58 and 60 can also be deposited by physical deposition method, sputtering, silk-screen printing and/or any of the above described other method.It is worth noting
Ground, the first and second bottom electrical contacts 58 and 60 can include different size and/or shapes.For example, in some respects, the first electricity
Contact 58 can include v-depression, for representing electric polarity.In some respects, v-depression represents negative electrode.In other respects, V
Connected in star can represent anode.It can thus be avoided the time associated with marker assemblies (for example, being painted by carving) and expense
With.
Fig. 7 A and Fig. 7 B are the one of the electrical connection for schematically showing the luminescence component based on substrate being described herein
The circuit diagram of individual example.Fig. 7 A show including LED chip 72 and with the electric ESD protectors in parallel of power supply or current source 76
The luminescence component 70 of part 74.LED chip 72 can include any size, shape, construction and/or color.Fig. 7 B show including
With the luminescence component 80 of the electric multiple LED chips 84 in parallel of power supply 82.Component 80 may further include ESD protective device
86, the device reverse biased to LED chip 84.LED chip 84 can include same color or different colours.LED chip 84 can
With including identical size and same shape or different sizes and different shape.Any amount of LED chip 84 can be provided.
Some aspects, multiple LED chips 84 can be electrically coupled.In some respects, multiple LED chips 84 can be set in series connection and parallel connection
It is electrically connected in the combination put.In some respects, it can also provide multiple mutually exclusive and/or individually may be used on single substrate
(for example, many more than two contact) LED chip of addressing.
The LED chip 72 and 84 being described herein can be embodied individually and/or in combination with optical transition material
The solid-state emitters used, it may for example comprise phosphor or illuminator, for launching a variety of colors, color dot or the light of wave-length coverage,
For example, being mainly white, blueness, cyan, green, yellow, amber or red light.In some respects, it is described herein
Luminescence component can include mainly blueness one or more LED chips 72 and 84, when illuminating, these chips can swash
The yellow phosphor living being arranged on one or more chips, for example, phosphor can at least partly be set directly at LED core
On piece and/or it is arranged on a part of luminescence component on LED chip, so that chip includes blue (BSY) chip that turns yellow.
In the embodiment of replacement, main red LED chips 72 and 84 may be embodied in the transmitting being described herein
In body component, and it can be used in conjunction with individually and/or with BSY chips.In some respects, red LED chips also may be used
To be optionally positioned within phosphor, sealant, dome, lens and/or its combination, for example, optical element 44 (Fig. 4), tool
The phosphor for having phosphor layer and/or evenly distributing, for mixing to produce warm white light output.
As shown in Figure 7 B, component 80 can include more than one LED chip 84, for example, multiple LED chips 84 and/or LED
The array of chip 84.Each chip in multiple LED chips 84 and/or the array of LED chip 84 can include about the same ripple
Long (for example, selected from identical target wavelength container).Alternately, at least the first LED chip 84 in multiple chips can include
The wavelength different from least the second LED chip in multiple chips (for example, at least the first LED chip 84 can be selected from at least
The different target wavelength container of one other LED chip 84).
Fig. 8 is diagrammatically illustrated according to the another of the one disclosed herein luminescence component based on substrate or multiple components
Individual embodiment, is indicated generally at 90.Component 90 can include that panel 92 or the bar under optical element 94 can be arranged on
Band (for example, with the panel P in Figure 1A to 1CI、PIIAnd PIIIIt is similar), it has via and luminescence chip (not shown).
Some aspects, optical element 94 can include the bead or other sealants distributed in liquid form on panel 92 or band
Region.Then, optical component 94 can be hardened on substrate 92.As described above, optical component 94 can be advantageously with low
Section dome, the dome portion allows the edge that it is bonded to panel 92 by surface tension.In some respects, falcate is formed
Feature (Fig. 2) can be set along the opposite edges of panel 92, and the sealant material that liquid is distributed is limited into its edge.
In some respects, component 90 can include the trace 98 of one or more " circular ", and these traces can surround base
Plate three adjacent surfaces extension, and can before encapsulation or it is after-applied.In some respects, it can electroplate, physics sinks
Product, sputtering, silk-screen printing, injection and/or other application trace 98.In other respects, trace 98 can include a part of lead
Framework or other the thin metal masters wound around a part of panel 92.
Because the time-consuming process and extra cost associated with separately molded optical component are eliminated, it is possible to easily
Produce component 90.After solidification or after the hardening of optical component 94, by cutting, cutting off along cut-off rule 96, saw
Cut or separation assembly 90 other modes, component 90 can be divided into multiple components based on single substrate.At some
Aspect, component 90 can be generallyperpendicular with the longitudinal axis of panel 92 in the direction cutting represented by arrow 96, the direction.
Fig. 9 shows another embodiment for the luminescence component based on substrate for being indicated generally at 100.Component 100
It can be included in and to be formed after sky and/or can be from nonmetallic or pottery after luminescence chip (for example, LED chip 104) is installed
The substrate 102 of the bigger panel segmentation of ceramic material (for example, Figure 1A to 1C).It is interesting to note that panel can be split, to divide
When cutting, exposure via forms polygon and external electrical contacts 108.LED chip 104 can be electrically connected to portion by wire bonding 106
Divide the via or electrical contact 108 of exposure.In some respects, panel can by sawing, so as to two or more substrates it
Between distribute via, it is similar to the segmentation carried out along the dotted line that shows in fig. 1 c.In some respects, it can be touched in a part of electricity
On first 108 and/or around this part electrical contact, deposition or application conductive trace or engagement pad 109.
It is interesting to note that electrical contact 108 can be fully located at the outside of substrate 102 and can be along the two of substrate 102
Individual or multiple outer surfaces are set.That is, electrical contact 108 can on two or more outer surface parts of substrate 102, along this
A little outer surface parts set and/or covered these outer surface parts.For example, electrical contact 108 can along substrate 102 upper table
The part in face, lower surface and side surface is set.Electricity due to the electrical contact that need not be molded in substrate and/or on hole
Contact is plated, so this can advantageously improve time associated with the processing assembly being described herein and cost.
In some respects, electrical contact 108 can include the through hole or via of exposure, and can include exposing metal (example
Such as, Ag) region.Pass through other of sawing, cutting, etching, cut-out, rupture or separation and the metal inside hole
Mode, can be with exposing metal, on the outer surface that substrate 102 is located at so as to metal.In some respects, ceramic material can be provided
Big panel is (for example, P in fig. 1 cIII), and one or more holes can be set inside it (for example, in fig. 1 c
V).Via by sawing or can be cut through, so that when splitting single substrate from big panel, the outer surface along substrate 102 is sudden and violent
Reveal via.In some respects, electrical contact 108 can include Ag region, during the segmentation of substrate 102, these regions of exposure.
For example, large-scale nonmetallic panel can be provided.Multiple metal filled vias can be located in panel.In independent substrate 102
During segmentation, panel can be cut off or sawing, so that via is cut into and/or is exposed, so as to exposed via formation one
Or multiple external electrical contacts 108.Then, LED chip 104 can be connected electrically, and optional optical element can be in LED
Distributed on the upper surface of chip 104 and substrate 102.
Figure 10 is shown according to the disclosed illustrative steps for being used to provide the luminescence component based on substrate herein
Flow chart.Step 110 includes providing panel.As described herein, panel can include non-metal base plate material, this
Reflected on (these) material and substantially do not absorb the light launched by one or more LED chips.In some respects, base
Plate can include ceramics, for example, aluminium nitride (AlN) or aluminum oxide (Al2O3).In some respects, it can provide about 2 inches (")
X 4 " panel, so that about 3mm x 3mm about 420 substrates can be formed by it or is partitioned into from it.
In step 112, via can be formed in panel.In some respects, multiple vias can be etched, drill through, carved
Paint, punching, formation are formed in green ceramic band or by other means, so that via internally permeates and at one
Extend in subpanel.In some respects, via can be drilled through the HTCC panels fired and be formed by laser.In step
In 114, conductive trace or electrical contact can be formed on a part of hole and/or near.Can herein it be retouched by above
Any suitable technology stated, applies conductive trace or contact, including plating, physical deposition, sputtering or silk-screen printing etc..
In step 116, multiple luminescence chips (for example, LED chip) can be arranged on the panels of 2 " x 4 " and with
Its die bonding.Luminescence chip can include any size, shape, component, structure and/or color.In some respects, Duo Gefa
Optical chip can in the form of an array be set on panel.In some respects, at least one LED chip can be located at least two
Between the via of formation.In some respects, each LED chip can pass through jointing material (e.g., including epoxy resin, silicon tree
The material of fat, solder, scaling powder, paste etc. or its combination) it is connected directly to panel.In step 118, including directly it is attached
(DA) panel of luminescence chip can be cured, to harden jointing material.In some respects, step 116 and 118 can be weighed
It is multiple, for the die bonding between panel and optional ESD chip and curing binder material.In the step 120, luminescence chip and
ESD chip can be with wire bonding to trace, for example, the electrical contact or the metal aperture of exposure of deposition.In some respects, wire bonding
The positive loop being bent upwards between the components can be included.In other respects, wire bonding can be included between the components at least
The reclinate negative loop in part.
In step 122, it can alternatively carve and paint panel.Line can be used for marking circuit, for further by panel
It is divided into the encapsulation based on single substrate.In other respects, (for example, in cutting, sawing, shearing, broken before segmentation panel
Before splitting etc.), line can give panel pressurization in advance.In some respects, due to being pressurizeed in advance to material, so carving to paint makes score
Cut easily.In some respects, during splitting, line can allow edge evenly.It is worth noting that, in needs
In the case of, carve that paint can be with optional and/or can be moved to step earlier in this process.
In step 124, can be with package panel.In some respects, sealant material can be optionally provided on panel
Material, for example, silicones or epoxy resin and one or more phosphors.Sealant can by formed falcate feature (for example,
M in fig. 2), line or surface tension limitation or be limited to the top outermost edge of panel.It is interesting to note that in some feelings
Under condition, panel is divided into can be more to one's profit independent assembly before, sealant can be applied.In other cases, it is contemplated that face
Plate can be divided into the component based on single panel first, then, and each component can be sealed individually.This need not be carved
Paint；Therefore, to paint step at above-mentioned quarter optional.In step 126, sealant can be cured.
In step 128, panel can be divided into the component based on single substrate, for example, by being sawed along line
Cut, cut off, shear, cut or rupture, for example, the direction represented in fig. 8.In some respects, can be along vertical with panel
Axle or the generallyperpendicular circuit segmentation panel of center line.In step 130, before client is distributed to, it can check and be based on
The component of substrate.
In some respects, the component and method provided herein can be configured as with 0.3W/mm2Power density it is defeated
Send more than every watt of about 160 lumens (LPW).In other respects, the component and method provided herein can be configured as
With 0.3W/mm2Power density conveying about 165LPW or more, about 170LPW or more, about 175LPW or more or
More than 180LPW.
Embodiment disclosed herein can provide one or more following favourable technical effects：Reduction provides hair
The cost of optical assembly；Reduce processing time；Reduce the size or section of luminescence component；Improve the manufacturability of luminescence component；Carry
Height changes the ability of module diagnostic, for example, the quantity and the size/shape of optical component of footprint designs, LED chip.
, although specific aspect, feature and the illustrated embodiment of component and method is described herein
Understand, according to disclosure herein, the effectiveness of this theme is not restricted so, but expand to and comprising
The embodiment of other multiple variations, modifications and substitutions, this emerges technical staff in the field of this theme at the moment.In advance
The various combinations for the structure and features that phase is described herein and sub-portfolio, and these combinations and sub-portfolio are for understanding this public affairs
The technical staff opened is apparent.In various features and part disclosed herein any one can with it is one or more its
Feature and part are combined disclosed in him, unless represented herein opposite.Therefore, the theme required below is intended to extensively
Ground understands and explained, is included in the embodiment of all these variations, modifications and substitutions in the range of it and including right
It is required that equivalent.
Claims (74)
1. a kind of luminescence component, including：
Substrate, including the first side with plane domain；
At least the first and second electrical contacts, are arranged on first side of the substrate, wherein, described at least first and second
The merging surface region of electrical contact includes electric contact area；
At least one luminescence chip, is arranged on first side of the substrate, and is electrically connected at least first He
Each in second electrical contact, wherein, at least first and second electrical contacts are arranged at least one described luminescence chip
Side on；And
Optical element, is arranged at least one described luminescence chip, wherein, the optical element is included relative to the base
The plane domain of plate Part I at an acute angle, and wherein, at least first and second electrical contacts are located at the light
Below the Part I for learning element；
Wherein, the electric contact area is less than the half of the plane domain of first side of the substrate.
2. component according to claim 1, wherein, the substrate includes ceramic material.
3. component according to claim 1, wherein, at least first and second electrical contacts include different sizes and difference
Shape.
4. component according to claim 1, including at least two vias being arranged in a part for the substrate.
5. component according to claim 3, including static discharge ESD protective device.
6. component according to claim 1, wherein, the optical element extends to the every of first side of the substrate
Individual edge.
7. component according to claim 6, wherein, the optical element includes silicones.
8. component according to claim 6, wherein, the optical element includes phosphor material.
9. component according to claim 6, wherein, the optical element includes dome.
10. component according to claim 9, wherein, the ratio between dome height and dome width is less than 0.5.
11. component according to claim 9, wherein, the ratio between the height of the thickness of substrate and the dome is 1.
12. component according to claim 1, wherein, the optical element includes sealant, and at least a portion sealant is set
Put on first side of the substrate.
13. component according to claim 1, wherein, the optical element includes the top generally bent.
14. component according to claim 1, wherein, the plane domain includes 9mm2Or it is smaller.
15. component according to claim 1, wherein, the electric contact area is less than 4.5mm2。
16. component according to claim 1, wherein, the electric contact area is less than 3.6mm2。
17. component according to claim 1, wherein, the electric contact area is less than 2.7mm2。
18. component according to claim 1, wherein, the luminescence component does not have cavity.
19. component according to claim 1, including：It is set to form falcate feature close to the edge of the substrate.
20. component according to claim 1, wherein, the substrate is high reflectance aluminum oxide substrate, it is described at least one
Luminescence chip is mounted directly to the high reflection aluminum oxide substrate.
21. component according to claim 1, including it is arranged on the low section dome on the substrate.
22. component according to claim 1, wherein, the substrate has more than 5W/mK, more than 10W/mK, more than 50W/
MK, the thermal conductivity more than 100W/mK, more than 150W/mK or more than 200W/mK.
23. component according to claim 1, wherein, the substrate has 20W/mK thermal conductivity.
24. component according to claim 1, wherein, the substrate has 170W/mK thermal conductivity.
25. component according to claim 1, wherein, at least first and second electrical contacts be placed in it is described at least
One luminescence chip is at a distance of at least 100 μm or farther.
26. a kind of luminescence component, including：
Based on the substrate of ceramics, including first surface, and with first thickness, maximum substrate width and equal to the maximum
The maximum zig of substrate width；
It is arranged at least one luminescence chip on the first surface of the substrate；And
The optical element on the substrate is arranged on, the optical element has second thickness, and including with maximum saturating
The non-cheese low section lens of mirror width and maximum length of lens equal to the maximum lens width, wherein：
The bottom of the dome is contacted at each outermost edge of the substrate with the substrate,
The bottom of the dome to be non-circular,
The maximum length of lens and the maximum lens width measured in the bottom of the dome is respectively equal to the maximum
Zig and the maximum substrate width, and
The second thickness is the maximum height of the dome measured from the first side of the substrate,
Wherein, the ratio between the first thickness and the second thickness be equal to 1, and
Wherein, the ratio between the maximum lens height and the maximum lens width of the dome is less than 0.5.
27. component according to claim 26, including the first and second electrical contacts on the substrate are set, wherein,
First and second electrical contact includes different sizes and different shape.
28. component according to claim 26, further comprise same edge along the substrate it is described at least one
The first electrical contact and the second electrical contact set on the homonymy of luminescence chip.
29. component according to claim 26, including at least two vias being arranged in a part for the substrate.
30. component according to claim 26, wherein, the substrate includes aluminum oxide.
31. component according to claim 26, wherein, the optical element extends to each outermost layer side of the substrate
Edge.
32. component according to claim 26, including the static discharge being arranged on the first surface of the substrate
(ESD) protection device.
33. component according to claim 26, wherein, the part of each via at least two via is along institute
The outer surface for stating substrate is set.
34. component according to claim 26, wherein, the optical element includes sealant, and the sealant is at least
A part is placed on the phase homonymy for the substrate for installing at least one luminescence chip.
35. component according to claim 26, wherein, the optical element includes cross section profile, wherein, the section wheel
Wide Part I is generally bending, and the Part II of the cross section profile is generally straight and relative to institute
The first side for stating substrate is at an acute angle.
36. component according to claim 26, wherein, the substrate is high reflection aluminum oxide substrate, it is described at least one
Luminescence chip is mounted directly to the high reflection aluminum oxide substrate.
37. component according to claim 26, wherein, at least one described luminescence chip is multiple luminescence chips.
38. component according to claim 26, wherein, the substrate has more than 5W/mK, more than 10W/mK, is more than
50W/mK, the thermal conductivity more than 100W/mK, more than 150W/mK or more than 200W/mK.
39. component according to claim 26, wherein, the substrate has 20W/mK thermal conductivity.
40. component according to claim 26, wherein, the substrate has 170W/mK thermal conductivity.
41. component according to claim 26, including the first and second electrical contacts on the substrate are set, wherein,
First and second electrical contact is placed in at least one described luminescence chip at a distance of at least 100 μm or farther.
42. a kind of luminescence component, including：
Substrate, including the first side, maximum substrate width and the maximum zig equal to the maximum substrate width；
It is arranged at least one luminescence chip on first side of the substrate；And
Lens, the maximum lens height that first side with top and from the substrate is measured, the lens include non-circular
Lens bottom, the non-circular lens bottom has bottom width,
Wherein, the lens bottom is only contacted in each outward flange of the substrate with the substrate,
Wherein, the bottom width of the non-circular lens bottom is equal to the maximum zig and the maximum substrate is wide
Degree,
Wherein, the top is centrally disposed above at least one described luminescence chip,
And
Wherein, the ratio between the maximum lens height and the bottom width is less than 0.5.
43. component according to claim 42, wherein, the ratio between the maximum lens height and the bottom width is small
In 0.4.
44. component according to claim 42, wherein, the ratio between the maximum lens height and the bottom width is small
In 0.3.
45. component according to claim 42, wherein, the ratio between the maximum lens height and the bottom width is small
In 0.2.
46. component according to claim 42, wherein, the lens include silicones.
47. component according to claim 42, wherein, the substrate includes ceramic material.
48. component according to claim 42, wherein, the substrate is high reflection aluminum oxide substrate, it is described at least one
Luminescence chip is mounted directly to the high reflection aluminum oxide substrate.
49. component according to claim 42, wherein, at least one described luminescence chip is multiple luminescence chips.
50. component according to claim 42, wherein, the lens include sealant, at least one of the sealant
Divide and be placed on the phase homonymy for the substrate for installing at least one luminescence chip.
51. component according to claim 42, wherein, the lens include section, wherein, the Part I of the section
Generally it is bending, and the Part II of the section is generally straight.
52. component according to claim 42, wherein, at least one described luminescence chip includes at least one light-emitting diodes
Manage (LED).
53. component according to claim 42, including via.
54. component according to claim 53, wherein, the via is set at least partially along the outer surface of the substrate.
55. component according to claim 53, wherein, the via is provided only on the inside of a part for the substrate.
56. component according to claim 42, wherein, the substrate has more than 5W/mK, more than 10W/mK, is more than
50W/mK, the thermal conductivity more than 100W/mK, more than 150W/mK or more than 200W/mK.
57. component according to claim 42, wherein, the substrate has 20W/mK thermal conductivity.
58. component according to claim 42, wherein, the substrate has 170W/mK thermal conductivity.
59. component according to claim 42, including the first and second electrical contacts on the substrate are set, wherein,
First and second electrical contact is placed in at least one described luminescence chip at a distance of at least 100 μm or farther.
60. a kind of method for providing the luminescence component based on substrate, methods described includes：
Material panel is provided in the form of multiple substrates, each substrate includes the first side with plane domain；
Multiple vias are formed in the material panel；
At least one luminescence chip is attached on first side of each substrate in the multiple substrate；
Formed on first side of each substrate in the multiple substrate in the first and second electrical contacts, the multiple substrate
First and second electrical contact of each substrate is arranged in the multiple substrate described at least one on same substrate
On the side of individual luminescence chip, wherein, the merging surface region of first and second electrical contact includes electric contact area, described
Electric contact area is less than the half of the plane domain of first side of each substrate；
At least one described luminescence chip is electrically connected to each in first and second electrical contact；
Liquid airproof agent material is distributed on the plane domain of each substrate in the multiple substrate to be formed and institute
The optical element that each substrate in multiple substrates is associated is stated,
Wherein, the optical element is arranged at least one described luminescence chip,
Wherein, the optical element is included in the Part I in the acute angle relative to the plane domain of the substrate, with
And
Wherein, the described first and second smooth contacts, which are arranged on below the Part I of the optical element, is used to minimize
Interference to light；And
Split the material panel, by other each bases in each substrate in the multiple substrate and the multiple substrate
Plate is separated.
61. method according to claim 60, wherein including providing oxidation aluminum deck there is provided the material panel.
62. method according to claim 60, is included on the plane domain and distributes before liquid airproof agent material,
Paint the material panel quarter.
63. method according to claim 60, wherein, described the first of each substrate being attached in the multiple substrate
At least one described luminescence chip on side is attached directly to a corresponding substrate in the multiple substrate by silicones.
64. method according to claim 60, including：Set on each opposite edges in the multiple substrate
Falcate feature.
65. method according to claim 60, including solidify the liquid airproof agent material.
66. method according to claim 60, including connect at least one described luminescence chip lead by wire bonding
It is bonded to corresponding electrical contact.
67. method according to claim 66, wherein, the wire bonding at least one described luminescence chip with it is described
Ring-type is at least generally formed down between corresponding electrical contact.
68. method according to claim 60, is included on the material panel and deposits electrical contact.
69. method according to claim 60, wherein, at least a portion of the liquid sealant is applied to described put down
Face region.
70. method according to claim 60, wherein, the sealant of solidification includes section, wherein, the first of the section
Part is generally bending, and the Part II of the section is generally straight.
71. method according to claim 60, wherein, the material panel has more than 5W/mK, more than 10W/mK, greatly
In 50W/mK, the thermal conductivity more than 100W/mK, more than 150W/mK or more than 200W/mK.
72. method according to claim 60, wherein, the material panel has 20W/mK thermal conductivity.
73. method according to claim 60, wherein, the material panel has 170W/mK thermal conductivity.
74. method according to claim 60, wherein, described first and on each substrate in the multiple substrate
Two electrical contacts are set on each substrate in the multiple substrate with least one described luminescence chip at a distance of at least 100 μm
Or it is farther.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/755,993 | 2013-01-31 | ||
| US13/755,993 US9780268B2 (en) | 2006-04-04 | 2013-01-31 | Submount based surface mount device (SMD) light emitter components and methods |
| PCT/US2013/035411 WO2014120256A1 (en) | 2013-01-31 | 2013-04-05 | Submount based surface mount device (smd) light emitter components and methods |
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| CN104969368A CN104969368A (en) | 2015-10-07 |
| CN104969368B true CN104969368B (en) | 2017-08-25 |
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| CN104969368A (en) | 2015-10-07 |
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