CN104966715A - GaN-based low leakage current clamped beam field effect transistor inverter and preparation method thereof - Google Patents
GaN-based low leakage current clamped beam field effect transistor inverter and preparation method thereof Download PDFInfo
- Publication number
- CN104966715A CN104966715A CN201510378327.7A CN201510378327A CN104966715A CN 104966715 A CN104966715 A CN 104966715A CN 201510378327 A CN201510378327 A CN 201510378327A CN 104966715 A CN104966715 A CN 104966715A
- Authority
- CN
- China
- Prior art keywords
- clamped beam
- mesfet
- type
- silicon nitride
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to a GaN-based low leakage current clamp beam field effect transistor inverter and a preparation method thereof. The GaN-based low leakage current clamped beam metal semiconductor field effect transistor (MESFET) inverter is composed of a clamped beam N-type MESEFT and a clamped beam P-type MESFET. Preparation of the MESFETs of the inverter is carried out on a semi-insulating GaN substrate, and a clamped beam structure is designed above each grid electrode. Electrodes plates are designed below each clamped beam. Pull-down voltage of the clamped beam is designed to be equal to an absolute value of threshold voltage of the MESFETs. When voltage between the clamped beam and the electrode plates is less than the absolute value of the threshold voltage, the clamped beam suspends above the grid electrode, the grid electrode is in open circuit, and the MESEFT is not conducted either. Only when the voltage between the clamped beam and the electrode plates reaches or is greater than the absolute value of the threshold voltage, the clamped beam is pulled down to be attached to the grid electrode, and the grid electrode and the clamped beam are in short circuit, so that the MESEFT is enabled to be conducted. According to the invention, impedance of the grid electrode is increased in operation, leakage current of the grid electrode is reduced, and the power consumption is effectively reduced.
Description
Technical field
The present invention proposes GaN base low-leakage current clamped beam MESFET phase inverter, belong to the technical field of microelectromechanical systems.
Background technology
Along with the development of microelectronics and microwave communication techniques, the requirement of domestic and international radio frequency performance of integrated circuits is more and more higher, and people it is also proposed higher requirement to the speed of device and power consumption.Metal-semiconductor field effect transistor (MESFET) has that electron mobility is high, carrier drift speed is fast, the advantages such as energy gap is large, capability of resistance to radiation is strong, operating temperature range is wide, and be widely used in the fields such as optical fiber communication, mobile communication, very-high speed computer, high-speed measuring instrument device, Aero-Space.And constantly reducing along with device feature size, especially after entering deep submicron process, the scale of chip constantly increases, and inner integrated transistor size sharply increases, and clock frequency is more and more higher.Numerous metal-semiconductor field effect transistor (MESFET), at very high operation at frequencies, causes the power problems of chip to become and becomes increasingly conspicuous.High power consumption can make chip overheating, not only can reduce chip performance and also can shorten its useful life.Too high power consumption also can make various mobile portable equipment have to face the problems such as power supply continuation of the journey and heat radiation.Therefore, the too high power consumption of integrated circuit is had higher requirement to the heat dispersion of equipment and stability, and the flying power of various mobile portable equipment is also subject to increasing challenge.Therefore, low power dissipation design is more and more important in VLSI (very large scale integrated circuit) designs process.
The power consumption of common MESFET device mainly comprises two aspects, the dynamic power consumption that when referring to that MESFET works on the one hand, AC signal produces; And be the loss that leakage current causes on the other hand.And two kinds are mainly contained for leakage current, a kind of grid leakage current being grid voltage and bringing, leakage current time another kind of during cut-off between source and drain.And at present the research of MESFET device is focused mostly in the reduction to MESFET dynamic power consumption.Little to the research of the reduction of leakage current.Namely the present invention is a kind of GaN base low-leakage current clamped beam MESFET phase inverter with extremely low grid leakage current based on GaN technological design.
Summary of the invention
Technical problem: the object of this invention is to provide a kind of gallium nitrate based low-leakage current clamped beam field-effect transistor phase inverter and preparation method, this phase inverter, when MESFET phase inverter works, wishes that it is be 0 at the electric current of grid usually.Grid and the active area of tradition MESFET are Schottky contacts, so inevitably have certain DC leakage current.In large scale integrated circuit, the existence of this leakage current can increase the power consumption of phase inverter in work.And this leakage current is effectively reduced in the present invention.
Technical scheme: gallium nitrate based low-leakage current clamped beam field-effect transistor phase inverter of the present invention is made up of clamped beam N-type MESFET and clamped beam P type MESFET, MESFET in this phase inverter is produced on semi-insulating GaN substrate, its input lead utilizes gold to make, the source ground of clamped beam N-type MESFET, the source electrode of clamped beam P type MESFET connects power supply, the drain electrode of clamped beam N-type MESFET and the drain electrode short circuit of clamped beam P type MESFET, grid and the active layer of clamped beam N-type MESFET and clamped beam P type MESFET form Schottky contacts, clamped beam is devised above grid, the clamped beam short circuit of two MESFET, clamped beam Liang Gemao district is produced on semi-insulating GaN substrate, two battery lead plates at each clamped beam envisaged underneath, the top of battery lead plate is coated with silicon nitride layer, the battery lead plate of each MESFET and the source shorted of this MESFET.
The threshold voltage designs of clamped beam N-type MESFET be on the occasion of, the threshold voltage designs of clamped beam P type MESFET is negative value, and the absolute value of the threshold voltage of clamped beam N-type MESFET and clamped beam P type MESFET is designed to equal, the actuation voltage of clamped beam is designed to the absolute value of the threshold voltage equaling MESFET, when input high level, voltage between the clamped beam of clamped beam N-type MESFET and battery lead plate is greater than the absolute value of threshold voltage, so clamped beam pulled down on grid, clamped beam and grid short circuit, voltage between the source electrode of simultaneously grid and clamped beam N-type MESFET is also greater than threshold voltage, so clamped beam N-type MESFET conducting, and the voltage between the clamped beam of clamped beam P type MESFET and battery lead plate is less than the absolute value of threshold voltage, so clamped beam suspends, grid is in open circuit, voltage between the source electrode of grid and clamped beam P type MESFET is close to 0, so clamped beam P type MESFET ends, thus output low level, and when input low level, situation is just the opposite, the clamped beam of clamped beam N-type MESFET suspends, be in cut-off, and the clamped beam of clamped beam P type MESFET is drop-down, be in conducting, thus phase inverter exports high level, so when the voltage when between clamped beam and battery lead plate is less than the absolute value of threshold voltage, clamped beam is the top being suspended in grid, now grid place is open circuit, MESFET not conducting, and the voltage only between clamped beam and battery lead plate when reaching or surpassing the absolute value of threshold voltage clamped beam just can pull down to and be attached on grid, clamped beam and grid short circuit, thus make MESFET conducting, compared to traditional type MESFET, the clamped beam of the MESFET in the present invention is when suspending, one deck air layer is had between grid and clamped beam, grid place is open circuit, so DC leakage current also reduces greatly, significantly reduce power consumption.
The preparation method of GaN base low-leakage current clamped beam MESFET phase inverter of the present invention is as follows:
1) semi-insulating GaN substrate is prepared;
2) deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of clamped beam P type MESFET active area;
3) clamped beam P type MESFET active area ion implantation: after injecting boron, anneal in a nitrogen environment; After having annealed, at high temperature carry out P
+dopant redistribution, forms the P type active layer of clamped beam P type MESFET active area;
4) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
5) deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of clamped beam N-type MESFET active area;
6) clamped beam N-type MESFET active area ion implantation: after injecting phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out N
+dopant redistribution, forms the N-type active layer of clamped beam N-type MESFET active area;
7) silicon nitride layer is removed: adopt dry etching technology all to be removed by silicon nitride;
8) photoetching grid region, removes the photoresist in grid region;
9) electron beam evaporation titanium/platinum/gold;
10) titanium/platinum/gold on photoresist and photoresist is removed;
11) heat, make titanium/platinum/billon and P type GaN active layer and N-type GaN active layer form Schottky contacts;
12) apply photoresist, photoetching also etches the photoresist of clamped beam N-type MESFET source electrode and drain region;
13) inject heavily doped N-type impurity, in the N-type heavily doped region that clamped beam N-type MESFET source electrode and drain region are formed, after injection, carry out short annealing process;
14) apply photoresist, photoetching also etches the photoresist of clamped beam P type MESFET source electrode and drain region;
15) inject heavily doped P-type impurity, in the P type heavily doped region that clamped beam P type MESFET source electrode and drain region are formed, after injection, carry out short annealing process;
16) photoetching source electrode and drain electrode, removes the photoresist of lead-in wire, source electrode and drain electrode;
17) vacuum evaporation gold germanium nickel/gold;
18) gold germanium nickel/gold on photoresist and photoresist is removed;
19) alloying forms ohmic contact, forms lead-in wire, source electrode and drain electrode;
20) apply photoresist, remove the photoresist of the anchor zone position of input lead, battery lead plate and clamped beam;
21) evaporate ground floor gold, its thickness is about 0.3 μm;
22) remove the gold on photoresist and photoresist, begin to take shape the anchor district of input lead, battery lead plate and clamped beam;
23) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
24) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride on battery lead plate;
25) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
26) evaporate titanium/gold/titanium, its thickness is 500/1500/
the down payment of evaporation for electroplating;
27) photoetching: remove and will electroplate local photoresist;
28) electrogilding, its thickness is 2 μm;
29) photoresist is removed: remove and do not need to electroplate local photoresist;
30) anti-carve titanium/gold/titanium, corrosion down payment, forms clamped beam;
31) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
In the present invention, the battery lead plate below the clamped beam of each MESFET and the source shorted of this MESFET.The threshold voltage designs of clamped beam N-type MESFET be on the occasion of, the threshold voltage designs of clamped beam P type MESFET is negative value, and the absolute value of the threshold voltage of clamped beam N-type MESFET and clamped beam P type MESFET is designed to equal.The actuation voltage of clamped beam is designed to equal with the absolute value of the threshold voltage of MESFET.When input high level, voltage between the clamped beam of clamped beam N-type MESFET and battery lead plate is greater than the absolute value of threshold voltage, so clamped beam pulled down on grid, and clamped beam and grid short circuit, voltage simultaneously between grid and source electrode is also greater than threshold voltage, so clamped beam N-type MESFET conducting.And the voltage between the clamped beam of clamped beam P type MESFET and battery lead plate is less than the absolute value of threshold voltage, so clamped beam suspends, grid is in open circuit, and the voltage simultaneously between grid and source electrode is close to 0, so clamped beam P type MESFET ends, thus phase inverter output low level.And when input low level, situation is just the opposite, the clamped beam of clamped beam N-type MESFET suspends, and be in cut-off, and the clamped beam of clamped beam P type MESFET is drop-down, is in conducting.Thus phase inverter exports high level.So in the present invention MESFET work in, when the voltage between clamped beam and battery lead plate is less than the absolute value of threshold voltage, clamped beam is suspended in above grid, and grid is open circuit, MESFET also not conducting.When voltage only between clamped beam and battery lead plate reaches or surpasses the absolute value of threshold voltage, clamped beam just can pull down to and be attached on grid, clamped beam and grid short circuit, thus makes MESFET conducting.Compared to the clamped beam of the MESFET in traditional MESFET the present invention when not drop-down be all suspend, have one deck air layer between clamped beam and grid, grid place is open circuit, thus work in DC leakage current greatly reduce.
Beneficial effect: GaN base low-leakage current clamped beam MESFET phase inverter of the present invention at work input voltage is not always carried on grid, when clamped beam suspends, have one deck air layer between clamped beam and grid, grid place is open circuit, effectively reduces grid leakage current.Thus the power consumption of the GaN base low-leakage current clamped beam MESFET phase inverter in the present invention is effectively reduced, performance also improves.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of GaN base low-leakage current clamped beam MESFET phase inverter of the present invention,
Fig. 2 is the vertical view of GaN base low-leakage current clamped beam MESFET phase inverter of the present invention,
Fig. 3 be Fig. 2 GaN base low-leakage current clamped beam MESFET phase inverter P-P ' to profile,
Fig. 4 be Fig. 2 GaN base low-leakage current clamped beam MESFET phase inverter A-A ' to profile,
Fig. 5 be Fig. 2 GaN base low-leakage current clamped beam MESFET phase inverter B-B ' to profile,
Figure comprises: clamped beam N-type MESFET1, clamped beam P type MESFET2, semi-insulating GaN substrate 3, input lead 4, grid 5, clamped beam 6, anchor district 7, battery lead plate 8, silicon nitride layer 9, P type active layer 10, N-type active layer 11, the source electrode 12 of clamped beam N-type MESFET, the source electrode 13 of clamped beam P type MESFET, the drain electrode 15 of lead-in wire 14, clamped beam N-type MESFET, the drain electrode 16 of clamped beam P type MESFET.
Embodiment
The present invention is made up of clamped beam N-type MESFET1 and clamped beam P type MESFET2, and the transistor of this phase inverter makes based on semi-insulating GaN substrate 3, and its input lead 4 utilizes gold to make.Source electrode 12 ground connection of clamped beam N-type MESFET1, the source electrode 13 of clamped beam P type MESFET2 connects power supply.The drain electrode 15 of clamped beam N-type MESFET1 and drain electrode 16 short circuit of clamped beam P type MESFET2.Grid 5 and the active layer of the MESFET in the present invention form Schottky contacts, devise clamped beam 6 above grid 5.Two MESFET clamped beams are short circuits.Clamped beam 6 Liang Gemao district 7 is produced on semi-insulating GaN substrate 3.Two battery lead plates 8 at each clamped beam 6 envisaged underneath, the top of battery lead plate is coated with silicon nitride layer 9.The battery lead plate 8 of each MESFET and the source shorted of this MESFET.
In the present invention, the threshold voltage designs of clamped beam N-type MESFET1 be on the occasion of, the threshold voltage designs of clamped beam P type MESFET2 is negative value, and the absolute value of the threshold voltage of clamped beam N-type MESFET1 and clamped beam P type MESFET2 is designed to equal, and the actuation voltage of clamped beam 6 is designed to equal with the absolute value of the threshold voltage of type MESFET.The input signal of the MESFET in the present invention is not directly be carried on grid 5, but is carried on clamped beam 6.When input high level, voltage between the clamped beam 6 of clamped beam N-type MESFET1 and battery lead plate 8 is greater than the absolute value of threshold voltage, so clamped beam 6 pulled down on grid 5, clamped beam 6 and grid 5 short circuit, voltage between the source electrode 12 of simultaneously grid 5 and clamped beam N-type MESFET1 is also greater than threshold voltage, so clamped beam N-type MESFET1 conducting.And the voltage between the clamped beam 6 of clamped beam P type MESFET2 and battery lead plate 8 is less than the absolute value of threshold voltage, so clamped beam 6 suspends, grid 5 is in open circuit, voltage between the source electrode 13 of grid 5 and clamped beam P type MESFET2 is close to 0, so clamped beam P type MESFET2 ends, thus output low level.And when input low level, situation is just the opposite, the clamped beam 6 of clamped beam N-type MESFET1 suspends, and be in cut-off, and the clamped beam 6 of clamped beam P type MESFET2 is drop-down, is in conducting.Thus phase inverter exports high level.In the MESFET course of work in the present invention, when the voltage when between clamped beam 6 and battery lead plate 8 is less than the absolute value of threshold voltage, clamped beam 6 is the tops being suspended in grid 5, and grid 5 place is open circuit, MESFET also not conducting.When voltage only between clamped beam 6 and battery lead plate 8 reaches or surpasses the absolute value of threshold voltage, clamped beam 6 just can pull down on subsides grid 5 thereunder, clamped beam 6 and grid 5 short circuit, thus makes MESFET conducting.Compared to traditional MESFET, the clamped beam 6 of the MESFET in the present invention, when suspending, has a layer of air between clamped beam 6 and grid 5, and grid place disconnects, so DC leakage current also reduces greatly.
The preparation method of GaN base low-leakage current clamped beam MESFET phase inverter comprises following step:
1) semi-insulating GaN substrate 3 is prepared;
2) deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of clamped beam P type MESFET2 active area;
3) clamped beam P type MESFET2 active area ion implantation: after injecting boron, anneal in a nitrogen environment; After having annealed, at high temperature carry out P
+dopant redistribution, forms the P type active layer 10 of clamped beam P type MESFET2 active area;
4) silicon nitride is removed: adopt dry etching technology all to be removed by silicon nitride;
5) deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of clamped beam N-type MESFET1 active area;
6) clamped beam N-type MESFET1 active area ion implantation: after injecting phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out N
+dopant redistribution, forms the N-type active layer 11 of clamped beam N-type MESFET1 active area;
7) silicon nitride is removed: adopt dry etching technology all to be removed by silicon nitride;
8) photoetching grid region, removes the photoresist in grid region;
9) electron beam evaporation titanium/platinum/gold;
10) titanium/platinum/gold on photoresist and photoresist is removed;
11) heat, make titanium/platinum/billon and P type GaN active layer 10 and N-type GaN active layer 11 form Schottky contacts;
12) apply photoresist, photoetching also etches the photoresist of clamped beam N-type MESFET1 source electrode and drain region;
13) inject heavily doped N-type impurity, in the N-type heavily doped region that clamped beam N-type MESFET1 source electrode and drain region are formed, after injection, carry out short annealing process;
14) apply photoresist, photoetching also etches the photoresist of clamped beam P type MESFET2 source electrode and drain region;
15) inject heavily doped P-type impurity, in the P type heavily doped region that clamped beam P type MESFET2 source electrode and drain region are formed, after injection, carry out short annealing process;
16) photoetching source electrode and drain electrode, removes the photoresist of lead-in wire, source electrode and drain electrode;
17) vacuum evaporation gold germanium nickel/gold;
18) gold germanium nickel/gold on photoresist and photoresist is removed;
19) alloying forms ohmic contact, forms lead-in wire 14, source electrode and drain electrode;
20) apply photoresist, remove the photoresist of the position, anchor district 7 of input lead 4, battery lead plate 8 and clamped beam;
21) evaporate ground floor gold, its thickness is about 0.3 μm;
22) remove the gold on photoresist and photoresist, begin to take shape the anchor district 7 of input lead 4, battery lead plate 8 and clamped beam;
23) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
24) photoetching etch nitride silicon dielectric layer, is retained in the silicon nitride layer 9 on battery lead plate;
25) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam 6;
26) evaporate titanium/gold/titanium, its thickness is 500/1500/
the down payment of evaporation for electroplating;
27) photoetching: remove and will electroplate local photoresist;
28) electrogilding, its thickness is 2 μm;
29) photoresist is removed: remove and do not need to electroplate local photoresist;
30) anti-carve titanium/gold/titanium, corrosion down payment, forms clamped beam 6;
31) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Difference with the prior art of the present invention is:
The present invention effectively can reduce MESFET grid leakage current operationally, reduces power consumption, improving SNR.Phase inverter in the present invention is made up of clamped beam N-type MESFET and clamped beam P type MESFET.The maximum difference of clamped beam MESFET and traditional MESFET is, be designed with fixed beam structure above the grid of clamped beam MESFET, clamped beam envisaged underneath has battery lead plate, the battery lead plate of each MESFET and the source shorted of this MESFET.The input signal of clamped beam MESFET is not directly be carried on grid, but is carried on clamped beam.The actuation voltage of clamped beam is designed to the absolute value of the threshold voltage equaling MESFET.When voltage when between clamped beam and battery lead plate is less than the absolute value of the threshold voltage of MESFET, clamped beam and the grid below it have certain gap, and now, grid place is open circuit, MESFET also not conducting.When only having the voltage when between clamped beam and battery lead plate to be equal to or greater than the absolute value of the threshold voltage of MESFET, clamped beam just can pulled down on attached grid thereunder, clamped beam and grid short circuit, now MESFET conducting.So, the clamped beam of the MESFET in the present invention not by drop-down time be all suspend, clamped beam and the grid below it have certain gap, and grid place is disconnection, so DC leakage current also reduces greatly, so make power consumption effectively be lowered.
Namely the structure meeting above condition is considered as GaN base low-leakage current clamped beam MESFET phase inverter of the present invention.
Claims (2)
1. a gallium nitrate based low-leakage current clamped beam field-effect transistor phase inverter, it is characterized in that this phase inverter is by clamped beam N-type MESFET(1) and clamped beam P type MESFET(2) form, MESFET in this phase inverter is produced on semi-insulating GaN substrate (3), its input lead (4) utilizes gold to make, clamped beam N-type MESFET(1) source electrode (12) ground connection, the source electrode (13) of clamped beam P type MESFET connects power supply, clamped beam N-type MESFET(1) drain electrode (15) and clamped beam P type MESFET(2) drain electrode (16) short circuit, clamped beam N-type MESFET(1) and clamped beam P type MESFET(2) grid (5) and active layer form Schottky contacts, clamped beam (6) is devised in grid (5) top, clamped beam (6) short circuit of two MESFET, clamped beam (6) Liang Gemao district (7) is produced on semi-insulating GaN substrate (3), two battery lead plates (8) at each clamped beam (6) envisaged underneath, the top of battery lead plate (8) is coated with silicon nitride layer (9), each MESFET's
The source shorted of battery lead plate (8) and this MESFET.
2. a preparation method for gallium nitrate based low-leakage current clamped beam field-effect transistor phase inverter as defined in claim 1, is characterized in that the preparation method of this phase inverter is as follows:
1. prepare semi-insulating GaN substrate;
2. deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of clamped beam P type MESFET active area;
3. clamped beam P type MESFET active area ion implantation: after injecting boron, anneal in a nitrogen environment; After having annealed, at high temperature carry out P
+dopant redistribution, forms the P type active layer of clamped beam P type MESFET active area;
4. remove silicon nitride layer: adopt dry etching technology all to be removed by silicon nitride;
5. deposit silicon nitride, grows one deck silicon nitride by plasma-enhanced chemical vapour deposition technique (PECVD), then photoetching and etch silicon nitride, removes the silicon nitride of clamped beam N-type MESFET active area;
6. clamped beam N-type MESFET active area ion implantation: after injecting phosphorus, anneal in a nitrogen environment; After having annealed, at high temperature carry out N
+dopant redistribution, forms the N-type active layer of clamped beam N-type MESFET active area;
7. remove silicon nitride layer: adopt dry etching technology all to be removed by silicon nitride;
8. photoetching grid region, removes the photoresist in grid region;
9. electron beam evaporation titanium/platinum/gold;
10. remove the titanium/platinum/gold on photoresist and photoresist;
11. heating, make titanium/platinum/billon and P type GaN active layer and N-type GaN active layer form Schottky contacts;
12. coating photoresists, photoetching also etches the photoresist of clamped beam N-type MESFET source electrode and drain region;
13. inject heavily doped N-type impurity, in the N-type heavily doped region that clamped beam N-type MESFET source electrode and drain region are formed, carry out short annealing process after injection;
14. coating photoresists, photoetching also etches the photoresist of clamped beam P type MESFET source electrode and drain region;
15. inject heavily doped P-type impurity, in the P type heavily doped region that clamped beam P type MESFET source electrode and drain region are formed, carry out short annealing process after injection;
16. photoetching source electrode and drain electrodes, remove the photoresist of lead-in wire, source electrode and drain electrode;
17. vacuum evaporation gold germanium nickel/gold;
18. remove the gold germanium nickel/gold on photoresist and photoresist;
19. alloyings form ohmic contact, form lead-in wire, source electrode and drain electrode;
20. coating photoresists, remove the photoresist of the anchor zone position of input lead, battery lead plate and clamped beam;
21. evaporation ground floor gold, its thickness is about 0.3 μm;
22. remove the gold on photoresist and photoresist, begin to take shape the anchor district of input lead, battery lead plate and clamped beam;
23. deposit silicon nitride: grow 1000 thick silicon nitride medium layers by plasma-enhanced chemical vapour deposition technique (PECVD);
24. photoetching etch nitride silicon dielectric layer, be retained in the silicon nitride on battery lead plate;
25. deposits photoetching polyimide sacrificial layer: in gallium arsenide substrate, apply 1.6 μm of thick polyimide sacrificial layer, require to fill up pit; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
26. evaporation titanium/gold/titaniums, its thickness is 500/1500/300: evaporate the down payment for electroplating;
27. photoetching: remove and will electroplate local photoresist;
28. electrogildings, its thickness is 2
μm;
29. remove photoresist: remove and do not need to electroplate local photoresist;
30. anti-carve titanium/gold/titanium, and corrosion down payment, forms clamped beam;
31. release polyimide sacrificial layer: developer solution soaks, and remove the polyimide sacrificial layer under clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510378327.7A CN104966715B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam field-effect transistor phase inverter and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510378327.7A CN104966715B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam field-effect transistor phase inverter and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104966715A true CN104966715A (en) | 2015-10-07 |
| CN104966715B CN104966715B (en) | 2018-01-16 |
Family
ID=54220731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510378327.7A Active CN104966715B (en) | 2015-07-01 | 2015-07-01 | Gallium nitride base low-leakage current clamped beam field-effect transistor phase inverter and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104966715B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787438B1 (en) * | 2001-10-16 | 2004-09-07 | Teravieta Technologies, Inc. | Device having one or more contact structures interposed between a pair of electrodes |
| US20070041142A1 (en) * | 2005-07-13 | 2007-02-22 | Amit Lal | Relay-connected semiconductor transistors |
| CN102543572A (en) * | 2010-12-31 | 2012-07-04 | 上海丽恒光微电子科技有限公司 | Micro electro mechanical system (MEMS) switch apparatus, logic gate and integrated circuit |
| US20130105286A1 (en) * | 2010-06-29 | 2013-05-02 | International Business Machines Corporation | Electromechanical switch device and method of operating the same |
| US20140070340A1 (en) * | 2011-06-15 | 2014-03-13 | International Business Machines Corporation | Normally closed microelectromechanical switches (mems), methods of manufacture and design structures |
-
2015
- 2015-07-01 CN CN201510378327.7A patent/CN104966715B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6787438B1 (en) * | 2001-10-16 | 2004-09-07 | Teravieta Technologies, Inc. | Device having one or more contact structures interposed between a pair of electrodes |
| US20070041142A1 (en) * | 2005-07-13 | 2007-02-22 | Amit Lal | Relay-connected semiconductor transistors |
| US20130105286A1 (en) * | 2010-06-29 | 2013-05-02 | International Business Machines Corporation | Electromechanical switch device and method of operating the same |
| CN102543572A (en) * | 2010-12-31 | 2012-07-04 | 上海丽恒光微电子科技有限公司 | Micro electro mechanical system (MEMS) switch apparatus, logic gate and integrated circuit |
| US20140070340A1 (en) * | 2011-06-15 | 2014-03-13 | International Business Machines Corporation | Normally closed microelectromechanical switches (mems), methods of manufacture and design structures |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104966715B (en) | 2018-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102610638A (en) | SiC-bipolar junction transistor (SiC-BJT) device for power integrated circuit and manufacturing method of SiC-BJT device | |
| CN102916042B (en) | Reverse IGBT (insulated gate bipolar transistor) device structure and manufacturing method therefor | |
| CN109742142A (en) | A kind of GaN base HEMT device and preparation method thereof | |
| CN102945858B (en) | IGBT (Insulated Gate Bipolar Transistor) device with field stop buffer layer and manufacture method of IGBT device | |
| CN110364575A (en) | A kind of junction barrier schottky diode and preparation method thereof with floating field ring terminal structure | |
| CN102779858A (en) | Power diode device and preparation method thereof | |
| CN104967407A (en) | GaN-based low leakage current cantilever beam switch cross-coupled oscillator and preparation method thereof | |
| CN104966715A (en) | GaN-based low leakage current clamped beam field effect transistor inverter and preparation method thereof | |
| CN103107189B (en) | IGBT back structure and preparation method | |
| CN107425063B (en) | Gallium arsenide-based HEMT device with thermoelectric conversion function and oriented to Internet of things | |
| CN202917494U (en) | A field stop buffer layer and an IGBT device containing the field stop buffer layer | |
| CN105097908A (en) | Ultra high-speed pulse thyristor and manufacturing method thereof | |
| CN105185841B (en) | A kind of field-effect diode and preparation method thereof | |
| CN105161490A (en) | Nitride-based low-leakage-current cantilever field effect transistor phase inverter and preparation method | |
| CN203871338U (en) | Ultra high speed pulse thyristor | |
| CN104992940A (en) | Nitride-based low-leakage-current cantilever beam field effect transistor transfer gate and preparation method | |
| CN105023940A (en) | GaN-based low-leakage-current clamped-beam MESFET transfer gate and preparation method thereof | |
| CN104993792A (en) | Cross-coupled oscillator using gallium nitride-based clamped beam switches with low leakage current, and preparation method of cross-coupled oscillator | |
| CN109449213A (en) | A kind of preparation method of the schottky junction diamond diode component with field plate | |
| CN109300977A (en) | A kind of transistor and preparation method thereof | |
| CN202917496U (en) | Locomotive thyristor | |
| CN105141289B (en) | The rest-set flip-flop of the cantilever switch of gallium nitride base low-leakage current four | |
| CN105140227A (en) | GaN-based NAND gate with low leakage current cantilever beams | |
| CN105048999B (en) | Gallium nitride base low-leakage current double cantilever beam switchs the rest-set flip-flop of nor gate | |
| CN202758895U (en) | Power diode device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |