CN104962199A - Polishing agent and polishing liquid with self-cleaning effect - Google Patents
Polishing agent and polishing liquid with self-cleaning effect Download PDFInfo
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- CN104962199A CN104962199A CN201510332607.4A CN201510332607A CN104962199A CN 104962199 A CN104962199 A CN 104962199A CN 201510332607 A CN201510332607 A CN 201510332607A CN 104962199 A CN104962199 A CN 104962199A
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- 238000005498 polishing Methods 0.000 title claims abstract description 75
- 230000000694 effects Effects 0.000 title claims abstract description 39
- 238000004140 cleaning Methods 0.000 title abstract description 7
- 239000007788 liquid Substances 0.000 title abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 38
- 239000002253 acid Substances 0.000 claims abstract description 35
- 150000001875 compounds Chemical class 0.000 claims abstract description 31
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 19
- 239000012530 fluid Substances 0.000 claims description 40
- 239000013543 active substance Substances 0.000 claims description 34
- 235000013162 Cocos nucifera Nutrition 0.000 claims description 22
- 244000060011 Cocos nucifera Species 0.000 claims description 22
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 22
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 21
- 229960001866 silicon dioxide Drugs 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 14
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 claims description 13
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 13
- 239000004141 Sodium laurylsulphate Substances 0.000 claims description 13
- -1 polyoxyethylene nonylphenol Polymers 0.000 claims description 13
- 235000019333 sodium laurylsulphate Nutrition 0.000 claims description 13
- 239000000084 colloidal system Substances 0.000 claims description 10
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 7
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 239000006061 abrasive grain Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 7
- 230000007797 corrosion Effects 0.000 abstract description 7
- 230000006378 damage Effects 0.000 abstract description 6
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- 235000012431 wafers Nutrition 0.000 abstract 4
- 239000003513 alkali Substances 0.000 abstract 1
- 239000004094 surface-active agent Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 description 14
- 239000010980 sapphire Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 7
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000007521 mechanical polishing technique Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000005543 nano-size silicon particle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/06—Other polishing compositions
- C09G1/14—Other polishing compositions based on non-waxy substances
- C09G1/18—Other polishing compositions based on non-waxy substances on other substances
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a polishing agent and polishing liquid with a self-cleaning effect. The polishing agent comprises, by weight, 5-40 parts of silicon dioxide, 0.2-10 parts of alkaline compounds, 0.001-1 part of cocoanutfatty acid N, N-diethanol and 0.001-0.5 part of surfactants. The polishing agent and the polishing liquid have the advantages that the added cocoanutfatty acid N, N-diethanol in the polishing liquid can be adsorbed by the surfaces of organic matters and abrasive grains, and accordingly the surface activity of the organic matters and the abrasive grains can be greatly improved; the cocoanutfatty acid N, N-diethanol and other components are matched with one another, coordinating effects can be realized by the cocoanutfatty acid N, N-diethanol and the other components, and accordingly the self-cleaning effect can be realized by the polishing liquid; adhesion of the organic matters and the abrasive grains on the surfaces of epitaxial wafers can be greatly reduced and even can be completely prevented; the organic matters and the abrasive grains can be prevented from being adhered on the surfaces of the polished wafers, or only extremely few organic matters and abrasive grains can be adhered on the surfaces of the polished wafers, accordingly, the polished wafers do not need to be cleaned by the aid of acid or alkali in follow-up procedures, corrosion damage to epitaxial film layers can be prevented, cleaning procedures can be simplified, the cleaning cost can be saved, and the polishing agent and the polishing liquid are suitable for popularization and application.
Description
Technical field
The invention belongs to wafer surface chemical Mechanical Polishing Technique field, be specifically related to a kind of rumbling compound with self-stip effect, also relate to a kind of polishing fluid with self-stip effect simultaneously.
Background technology
Photodiode (LED) is a kind of can be the solid state device of luminous energy electric energy conversion, and its structure is primarily of compositions such as PN junction chip, electrode and optical systems.The basic functional principle of LED is an electro-optic conversion process, when a forward bias puts on PN junction two ends, due to the reduction of PN junction potential barrier, the positive charge in P district will spread to N district, the electronics in N district, also to the diffusion of P district, forms the accumulation of non-equilibrium electric charge simultaneously in two regions.The minority carrier produced due to pulse current injectingt is unstable, for PN junction system, the non-equilibrium hole be injected in valence band will with the electron recombination in conduction band, and wherein unnecessary energy will in the form of light to external irradiation, the energy difference in electronics and hole is larger, and the photon energy of generation is higher.The main photoelectric parameter such as wavelength, brightness, forward voltage of LED depends on epitaxial material substantially, and therefore epitaxial material is the core of LED.LED is exactly within specified temperatures, by metal-organic chemical vapor deposition equipment (MOCVD), what the epitaxial material of gaseous state is had control is transported to substrate base surface, grows specific monocrystal thin films and forms, the current mainly sapphire of its substrate material.
Because the thermal conductivity of sapphire material is poor, for preventing the too high temperature rise in LED active area from having an impact to its light output characteristic and life-span, after the technique such as complete prepared by electrode, the back of the body must be carried out to Sapphire Substrate thinning, to improve the heat dispersion of device.There is surface damage layer in the substrate back after thinning, its unrelieved stress can cause epitaxial wafer flexural deformation and easily cracked in follow-up operation, must grind substrate back and chemically machinery polished (CMP) after thinning, to remove surface damage layer, eliminate unrelieved stress.
Chemically machinery polished (CMP) is the technology that almost uniquely can reach leveling at present.Its basic principle of operation is: under existing with polishing fluid under a certain pressure, polished workpiece does relative movement relative to polishing pad, thus reaches the effect of surfacing.Polishing fluid is as the key element in chemical Mechanical Polishing Technique, and its performance directly affects the surface quality after workpiece polishing.In prior art, CN104109480A discloses a kind of Twp-sided polishing machine sapphire substrate polishing solution, containing abrasive silica, basic cpd, oxygenant, tensio-active agent and water.Wherein, the effect of mechanical grinding when silicon-dioxide carries polishing sapphire; Basic cpd is used for corrosion or etching sapphire surface carries out chemical rightenning.Oxygenant in above-mentioned formula can the metallic impurity on oxidation workpiece surface, thus prevent the workpiece surface after polishing to be contaminated with metals, and improve the quality of finish of workpiece surface.
But, after cmp, in order to remove the organic contaminations and abrasive grain that wafer surface brought by polishing fluid, it cleans need to adopt acid base pair, otherwise, be difficult to the organic contaminations on surface and abrasive grain to clean up, but soda acid inevitably can produce corrosion to the epitaxial film of substrate face.Therefore, need a kind of polishing fluid with self-stip effect to carry out chemically machinery polished to process for sapphire-based LED, do not need the epitaxial wafer after adopting acid base pair polishing again to clean, to avoid producing corrosion to epitaxial film.
Summary of the invention
The object of this invention is to provide a kind of rumbling compound with self-stip effect, solve after existing polishing fluid carries out chemically machinery polished to process for sapphire-based LED, also need to adopt acid base pair to clean to the epitaxial wafer after polishing the problem that caused epitaxial film is corroded.
Second object of the present invention is to provide a kind of polishing fluid with self-stip effect.
In order to realize above object, the technical solution adopted in the present invention is:
There is a rumbling compound for self-stip effect, comprise the component of following parts by weight: silicon-dioxide 5 ~ 40 parts, basic cpd 0.2 ~ 10 part, coconut acid diethanolamine condensates 0.001 ~ 1 part, 0.001 ~ 0.5 part, tensio-active agent.
Described silicon-dioxide be in colloid silica, aerosil, precipitated silica any one or multiple.
The particle diameter of described silicon-dioxide is 10 ~ 120nm.
Described basic cpd be in potassium hydroxide, sodium hydroxide, Tetramethylammonium hydroxide, quadrol any one or multiple.
Described tensio-active agent is the mixture of sodium lauryl sulphate and polyoxyethylene nonylphenol ether.
The above-mentioned preparation method with the rumbling compound of self-stip effect, comprises silicon-dioxide, basic cpd, coconut acid diethanolamine condensates, the tensio-active agent of getting formula ratio, and mixing, to obtain final product.
A kind of polishing fluid with self-stip effect, component containing following mass percent: silicon-dioxide 5% ~ 40%, basic cpd 0.2% ~ 10%, coconut acid diethanolamine condensates 0.001% ~ 1%, tensio-active agent 0.001% ~ 0.5%, surplus is water.
Silicon-dioxide in above-mentioned rumbling compound or polishing fluid, is nano silicon, plays a part mechanical grinding during polishing.Described silicon-dioxide be in colloid silica, aerosil, precipitated silica any one or multiple.
For improving polishing efficiency, preferably, the particle diameter of described silicon-dioxide is 10 ~ 120nm.The granularity of silicon-dioxide is too little, does not have the effect of mechanical grinding; Granularity is too large, then can cause cut and injury at polished surface.
Basic cpd in above-mentioned rumbling compound or polishing fluid is used for corrosion or etching sapphire surface carries out chemical rightenning, and it is as polishing promotor, and can be the conventional inorganic alkaline compound in this area, also can be the middle strongly alkaline compound such as ammonia, ammonium salt, amine; If can sapphire surface be corroded and not with atoms metal chelating, do not bring the basic cpd of metal impurity con to be all feasible.Preferably, described basic cpd be in potassium hydroxide, sodium hydroxide, Tetramethylammonium hydroxide, quadrol any one or multiple.
Coconut acid diethanolamine condensates in above-mentioned rumbling compound or polishing fluid is clean-out system, the surface of organism and abrasive grain can be adsorbed onto, greatly improve the surfactivity of organism and abrasive grain, make organism and abrasive grain suspend, disperse, prevent organism and abrasive grain from sticking to epitaxial wafer surface, improve the effect of polishing fluid self-stip, clean with soda acid again after not needing CMP, avoid acid base pair epitaxial film to produce corrosion damage, can matting be simplified, save cleaning cost; This clean-out system is soluble in water, can with kinds of surface active ingredient.
In above-mentioned rumbling compound or polishing fluid, tensio-active agent can significantly reduce polishing fluid surface tension, improve its mobility and perviousness, and the friction resistance that can reduce in polishing and obtain better lubrication, make the wafer after polishing have lower surfaceness.Preferably, described tensio-active agent is the mixture of sodium lauryl sulphate and polyoxyethylene nonylphenol ether; In described mixture, the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is 1:0.3 ~ 8.
The above-mentioned preparation method with the polishing fluid of self-stip effect, gets the silicon-dioxide of formula ratio, basic cpd, coconut acid diethanolamine condensates, tensio-active agent, adds in the water of formula ratio, mix, to obtain final product.
The polishing fluid with self-stip effect of the present invention, is mixed rumbling compound and water; Containing silicon-dioxide, basic cpd, coconut acid diethanolamine condensates and tensio-active agent in rumbling compound; Coconut acid diethanolamine condensates can be adsorbed onto the surface of organism and abrasive grain, considerably increases the surfactivity of organism and abrasive grain, and itself and other component cooperatively interacts, coordinative role, makes polishing fluid have self-stip effect; In chemically machinery polished process for sapphire-based LED epitaxial wafer surface process, greatly reduce and even completely avoid the adhesion at epitaxial wafer surface of organism and abrasive grain; Wafer surface after polishing can not adhere to organism and abrasive grain, or only have few adhesion (can be cleaned up by simple ultrasonic cleaning), follow-up need is cleaned with soda acid again, avoid and corrosion damage is produced to epitaxial film, simplify matting, save cleaning cost, be applicable to applying.
Embodiment
Below in conjunction with embodiment, the present invention is further illustrated.
Embodiment 1
The rumbling compound with self-stip effect of the present embodiment, comprises the component of following parts by weight: granularity is colloid silica 20 parts, 0.6 part, potassium hydroxide, coconut acid diethanolamine condensates 0.08 part, 0.06 part, the tensio-active agent of 10 ~ 30nm.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 1:1.
The polishing fluid with self-stip effect of the present embodiment, component containing following mass percent: granularity is colloid silica 20%, potassium hydroxide 0.6%, coconut acid diethanolamine condensates 0.08%, the tensio-active agent 0.06% of 10 ~ 30nm, and surplus is water.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 1:1.
Preparation method is: get colloid silica 1000g, potassium hydroxide 30g, coconut acid diethanolamine condensates 4g, tensio-active agent 3g, namely obtain described rumbling compound after mixing; Gained rumbling compound is added in the deionized water of formula ratio, dispersed with stirring, obtain the polishing fluid of 5kg.
Embodiment 2
The rumbling compound with self-stip effect of the present embodiment, comprises the component of following parts by weight: granularity is aerosil 40 parts, Tetramethylammonium hydroxide 5 parts, coconut acid diethanolamine condensates 1 part, 0.5 part, the tensio-active agent of 30 ~ 50nm.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 3:1.
The polishing fluid with self-stip effect of the present embodiment, component containing following mass percent: granularity is aerosil 40%, Tetramethylammonium hydroxide 5%, coconut acid diethanolamine condensates 1%, the tensio-active agent 0.5% of 30 ~ 50nm, and surplus is water.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 3:1.
Preparation method is: namely obtain described rumbling compound after getting the aerosil of formula ratio, Tetramethylammonium hydroxide, coconut acid diethanolamine condensates, tensio-active agent mixing; Gained rumbling compound is added in the deionized water of formula ratio, dispersed with stirring, obtain described polishing fluid.
Embodiment 3
The rumbling compound with self-stip effect of the present embodiment, comprises the component of following parts by weight: granularity is precipitated silica 5 parts, 1 part, sodium hydroxide, coconut acid diethanolamine condensates 0.1 part, 0.01 part, the tensio-active agent of 50 ~ 100nm.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 1:2.
The polishing fluid with self-stip effect of the present embodiment, component containing following mass percent: granularity is precipitated silica 5%, sodium hydroxide 1%, coconut acid diethanolamine condensates 0.1%, the tensio-active agent 0.01% of 50 ~ 100nm, and surplus is water.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 1:2.
Preparation method is: namely obtain described rumbling compound after getting the precipitated silica of formula ratio, sodium hydroxide, coconut acid diethanolamine condensates, tensio-active agent mixing; Gained rumbling compound is added in the deionized water of formula ratio, dispersed with stirring, obtain described polishing fluid.
Embodiment 4
The rumbling compound with self-stip effect of the present embodiment, comprises the component of following parts by weight: granularity is colloid silica 25 parts, quadrol 10 parts, coconut acid diethanolamine condensates 0.01 part, 0.1 part, the tensio-active agent of 80 ~ 120nm.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 1:8.
The polishing fluid with self-stip effect of the present embodiment, component containing following mass percent: granularity is colloid silica 25%, quadrol 10%, coconut acid diethanolamine condensates 0.01%, the tensio-active agent 0.1% of 80 ~ 100nm, and surplus is water.Wherein, described tensio-active agent is the mass ratio of sodium lauryl sulphate and polyoxyethylene nonylphenol ether is the mixture of 1:8.
Preparation method is: namely obtain described rumbling compound after getting the colloid silica of formula ratio, quadrol, coconut acid diethanolamine condensates, tensio-active agent mixing; Gained rumbling compound is added in the deionized water of formula ratio, dispersed with stirring, obtain described polishing fluid.
Experimental example
The use properties of this experimental example to embodiment 1-4 gained polishing fluid detects.Concrete grammar is: adopt embodiment 1-4 gained polishing fluid and comparative example polishing fluid process for sapphire-based LED to be carried out on single side polishing machine to the chemically machinery polished of the same terms, polishing pad is Suba-600 polyurethane polishing pad.
Wherein, comparative example adopts the preparation method identical with embodiment 1 to prepare 5kg polishing fluid, and described polishing fluid contains silica 1 000g, basic cpd 30g, tensio-active agent 3g, and surplus is deionized water; Not containing coconut acid diethanolamine condensates, all the other are with embodiment 1.
Polishing condition is as shown in table 1 below.
Table 1 polishing condition
| Polish pressure | Polishing disk rotating speed | Polishing fluid flow | Polishing time |
| 200g/cm 2 | 80r/min | 300ml/min | 1h |
Polishing terminates first to rinse wafer with deionized water afterwards, then carries out ultrasonic cleaning 30min with dehydrated alcohol, and organism and the abrasive grain of then examining under a microscope sapphire substrate surface remain.
Observations: adopt the wafer surface after the polishing of embodiment 1-4 gained polishing fluid not have organism and abrasive grain to remain; The wafer surface after the polishing fluid polishing of comparative example is adopted to have a large amount of organism and abrasive grain to remain.Experimental result shows, after adopting polishing fluid of the present invention to carry out CMP, process for sapphire-based LED surface does not have organism and abrasive grain to adhere to, or has the adhesion of minute quantity, can be cleaned up by ultrasonic cleaning yet, not need to clean with soda acid again.
Claims (10)
1. there is a rumbling compound for self-stip effect, it is characterized in that: the component comprising following parts by weight: silicon-dioxide 5 ~ 40 parts, basic cpd 0.2 ~ 10 part, coconut acid diethanolamine condensates 0.001 ~ 1 part, 0.001 ~ 0.5 part, tensio-active agent.
2. the rumbling compound with self-stip effect according to claim 1, is characterized in that: described silicon-dioxide be in colloid silica, aerosil, precipitated silica any one or multiple.
3. the rumbling compound with self-stip effect according to claim 1 and 2, is characterized in that: the particle diameter of described silicon-dioxide is 10 ~ 120nm.
4. the rumbling compound with self-stip effect according to claim 1, is characterized in that: described basic cpd be in potassium hydroxide, sodium hydroxide, Tetramethylammonium hydroxide, quadrol any one or multiple.
5. the rumbling compound with self-stip effect according to claim 1, is characterized in that: described tensio-active agent is the mixture of sodium lauryl sulphate and polyoxyethylene nonylphenol ether.
6. one kind has the polishing fluid of self-stip effect, it is characterized in that: the component containing following mass percent: silicon-dioxide 5% ~ 40%, basic cpd 0.2% ~ 10%, coconut acid diethanolamine condensates 0.001% ~ 1%, tensio-active agent 0.001% ~ 0.5%, surplus is water.
7. the polishing fluid with self-stip effect according to claim 6, is characterized in that: described silicon-dioxide be in colloid silica, aerosil, precipitated silica any one or multiple.
8. the polishing fluid with self-stip effect according to claim 6 or 7, is characterized in that: the particle diameter of described silicon-dioxide is 10 ~ 120nm.
9. the polishing fluid with self-stip effect according to claim 6, is characterized in that: described basic cpd be in potassium hydroxide, sodium hydroxide, Tetramethylammonium hydroxide, quadrol any one or multiple.
10. the polishing fluid with self-stip effect according to claim 6, is characterized in that: described tensio-active agent is the mixture of sodium lauryl sulphate and polyoxyethylene nonylphenol ether.
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| CN201510332607.4A CN104962199B (en) | 2015-06-16 | 2015-06-16 | A kind of polishing agent and polishing fluid acted on self-cleaning |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109855931A (en) * | 2018-12-20 | 2019-06-07 | 河钢股份有限公司 | A kind of preparation method of austenitic alloy EBSD sample |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1970665A (en) * | 2006-12-07 | 2007-05-30 | 西北工业大学 | Polishing liquid and method for polishing II-VI compound semiconductor wafer |
| CN102618173A (en) * | 2012-02-28 | 2012-08-01 | 南通海迅天恒纳米科技有限公司 | Sapphire polishing composition |
| CN102851155A (en) * | 2012-09-17 | 2013-01-02 | 吴江鑫霞纺织有限公司 | Tough oil stain scavenger |
| CN103087637A (en) * | 2011-11-07 | 2013-05-08 | 盟智科技股份有限公司 | Slurry composition and use thereof |
| CN103184010A (en) * | 2012-04-05 | 2013-07-03 | 铜陵市琨鹏光电科技有限公司 | Polishing solution for precision polishing of LED sapphire substrate |
-
2015
- 2015-06-16 CN CN201510332607.4A patent/CN104962199B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1970665A (en) * | 2006-12-07 | 2007-05-30 | 西北工业大学 | Polishing liquid and method for polishing II-VI compound semiconductor wafer |
| CN103087637A (en) * | 2011-11-07 | 2013-05-08 | 盟智科技股份有限公司 | Slurry composition and use thereof |
| CN102618173A (en) * | 2012-02-28 | 2012-08-01 | 南通海迅天恒纳米科技有限公司 | Sapphire polishing composition |
| CN103184010A (en) * | 2012-04-05 | 2013-07-03 | 铜陵市琨鹏光电科技有限公司 | Polishing solution for precision polishing of LED sapphire substrate |
| CN102851155A (en) * | 2012-09-17 | 2013-01-02 | 吴江鑫霞纺织有限公司 | Tough oil stain scavenger |
Non-Patent Citations (1)
| Title |
|---|
| 李东光: "《新型化工小产品制造技术》", 31 January 2001 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109855931A (en) * | 2018-12-20 | 2019-06-07 | 河钢股份有限公司 | A kind of preparation method of austenitic alloy EBSD sample |
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| CN104962199B (en) | 2017-08-25 |
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