CN104952752A - Method for detecting inclination of wafer - Google Patents
Method for detecting inclination of wafer Download PDFInfo
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- CN104952752A CN104952752A CN201410123948.6A CN201410123948A CN104952752A CN 104952752 A CN104952752 A CN 104952752A CN 201410123948 A CN201410123948 A CN 201410123948A CN 104952752 A CN104952752 A CN 104952752A
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Abstract
The invention reveals a method for detecting the inclination of a wafer, and the method is used for judging whether the baking position of the wafer is correct or not. The method comprises the steps: placing the wafer on a hot plate; heating the wafer for a time period, and detecting and recording the maximum temperature difference of the hot plate in the time period in real time; judging whether the maximum temperature difference in the time period exceeds a preset value, and judging that the wafer is inclined if the maximum temperature difference is less than the preset value. The method is quick and effect, can directly reflect whether the position of the wafer is correct or not, and brings convenience for a manufacture process.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly relate to and need to carry out in bake process at wafer, the method for detecting that a kind of wafer position tilts.
Background technology
In manufacture of semiconductor process, such as, in photoetching process, just need to toast wafer, relate in the process of thermal change at these, the uniformity coefficient be heated of wafer has direct impact to subsequent technique, the uneven meeting of being heated of such as wafer causes the homogeneity (uniformity) of CD, and the serious yield affecting product, even can cause and scrap.
Whether the uniformity that wafer is heated tilts with wafer position is directly related, and as depicted in figs. 1 and 2, the position of wafer 2 on hot plate 1 comprises normal placement and slant setting, and when such as Fig. 2, wafer run-off the straight, will cause temperature anomaly.But also there is no at present a kind of means detecting wafer whether run-off the straight on a production line.The common detection method just statistics by OCAP and the dosage to product (add measurement), learns whether product receives impact, but is finishing operations due to this, can not learn timely for affected product.
Therefore, how to improve this situation, become problem demanding prompt solution.
Summary of the invention
The object of the invention is to, the method for detecting that a kind of wafer position tilts is provided, whether tilt to detect wafer position fast and effectively.
For solving the problems of the technologies described above, the invention provides the method for detecting that a kind of wafer position tilts, for judging that whether wafer position when accepting baking is correct, comprising:
Place wafer on hot plate;
Keep wafer heats one time period, detecting real-time and be recorded in this time period each setting the moment hot plate on maximum temperature difference;
Whether the maximum temperature difference relatively in the described time period exceedes set point, if maximum temperature difference is less than set point, then and described wafer tilt.
Optionally, for the method for detecting that described wafer position tilts, described set point is 1 DEG C.
Optionally, for the method for detecting that described wafer position tilts, the described time period is 30s ~ 60s.
Optionally, for the method for detecting that described wafer position tilts, the comparative result whether maximum temperature difference in the described time period being exceeded set point is sent to IEMS system.
Optionally, for the method for detecting that described wafer position tilts, if the maximum temperature difference in the described time period is less than set point, then product is detained by IEMS system; If the maximum temperature difference in the described time period is more than or equal to set point, then wafer position is normal, and confirms to let pass.
Optionally, for the method for detecting that described wafer position tilts, described maximum temperature difference is the difference of maximum temperature and minimum temperature in the temperature detected in the described time period.
Optionally, for the method for detecting that described wafer position tilts, the temperature range of described hot plate is 90 ° ~ 150 °.
Compared with prior art, in the method for detecting that wafer position provided by the invention tilts, by wafer heats process, the maximum temperature difference on the hot plate in enrollment corresponding moment within this time period, and the relation of more described maximum temperature difference and set point, thus reflect whether wafer tilts.Compared to existing technology, method of the present invention is directly effective, can be real-time reflect whether tilt by the situation of temperature on hot plate; Further, by the control of IEMS system, can the direct-detection product that goes out to occur, thus to process in time, loss is reduced as much as possible.
Accompanying drawing explanation
Fig. 1 is the normal schematic diagram of wafer position in prior art and the present invention;
Fig. 2 is in the present invention and the schematic diagram that in the present invention, wafer position tilts;
Fig. 3 is the flow chart of the method for detecting that in the present invention, wafer position tilts.
Embodiment
Below in conjunction with schematic diagram, the method for detecting that wafer position of the present invention tilts is described in more detail, which show the preferred embodiments of the present invention, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
In order to clear, whole features of practical embodiments are not described.They in the following description, are not described in detail known function and structure, because can make the present invention chaotic due to unnecessary details.Will be understood that in the exploitation of any practical embodiments, a large amount of implementation detail must be made to realize the specific objective of developer, such as, according to regarding system or the restriction about business, change into another embodiment by an embodiment.In addition, will be understood that this development may be complicated and time-consuming, but be only routine work to those skilled in the art.
In the following passage, more specifically the present invention is described by way of example with reference to accompanying drawing.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Core concept of the present invention is, provides the method for detecting that a kind of wafer position tilts, and for judging that whether wafer position when accepting baking is correct, comprising: place wafer on hot plate; Keep wafer heats one time period, detecting real-time the maximum temperature difference be recorded in this time period on wafer; Whether the maximum temperature difference relatively in the described time period exceedes set point, if maximum temperature difference is less than set point, then and described wafer tilt.
Below enumerate the preferred embodiment of the method for detecting that described wafer position tilts, to clearly demonstrate content of the present invention, will be clear that, content of the present invention is not restricted to following examples, and other improvement by the routine techniques means of those of ordinary skill in the art are also within thought range of the present invention.
Based on above-mentioned thought, the preferred embodiment of the method for detecting providing wafer position to tilt below, please refer to Fig. 1-Fig. 3, and Fig. 1 is the normal schematic diagram of wafer position in the present invention; Fig. 2 is the schematic diagram that in the present invention, wafer position tilts; Fig. 3 is the flow chart of the method for detecting that in the present invention, wafer position tilts.The formation method of the method for detecting of the wafer position inclination of the present embodiment comprises:
Step S11: place wafer on hot plate; Although, in current operation, wafer adopts mechanical arm to transmit placement usually, but its position still can not ensure that accurately the position as the wafer 2 in Fig. 1 is optimum state completely, but sometimes, the out-of-flatness of such as wafer own, untidy, in the situations such as conveyer is abnormal, be easy to situation about occurring as shown in Figure 2, namely there is deflection in the position of wafer 2 on hot plate 1.
Step S12: keep wafer heats one time period, detecting real-time and be recorded in this time period each setting the moment wafer on maximum temperature difference.Inventor finds after research, and the temperature range of usual hot plate is 90 ° ~ 150 °, and when wafer 2 is put on hot plate 1, colder wafer 2 can cause the temperature of hot plate 1 itself to change as medium by air.If wafer 2 has inclination (as Fig. 2), so colder wafer 2 is just few close to the area of hot plate 1, therefore, hot plate 1 range of temperature is just little, then show because wafer 2 is few close to the area of hot plate 1 on the other hand, wafer 2 can be made to be heated uneven, thus have impact on CD.Same, as wafer 2 position normal (as Fig. 1), the wafer 2 so compared with cold is many close to the area of hot plate 1, and therefore the range of temperature of hot plate 1 is large.Usually, the time period of heating is 30s ~ 60s, in this course, the temperature meeting moment change of hot plate 1, therefore, detect hot plate 1 temperature at a time by heat sensor (being usually arranged near hot plate 1), and calculate to obtain maximum temperature difference, described maximum temperature difference is the difference of maximum temperature and minimum temperature in the temperature detected in the time period of heating.
Then, carry out step S13: whether the maximum temperature difference compared in the described time period exceedes set point, if maximum temperature difference is less than set point, then described wafer 2 tilts.By above-mentioned analysis, it is known when wafer 2 tilts, the temperature of hot plate 1 is influenced less, therefore maximum temperature missionary society is lower, in the present embodiment, set point is 1 DEG C, when maximum temperature difference is less than 1 DEG C, just show that wafer 2 has certain inclination, and this inclined degree can have influence on the CD of product.For the ease of timely control, processed by affected product, preferably, the comparative result whether maximum temperature difference in the described time period being exceeded set point is sent to IEMS system, if the maximum temperature difference in the described time period is less than set point, then product is detained by IEMS system; If the maximum temperature difference in the described time period is more than or equal to set point, then wafer position is normal, and is confirmed by IEMS system and let pass, to carry out subsequent operation.
As can be seen here, in the method for the invention, by wafer heats process, the maximum temperature difference on the hot plate of enrollment within this time period, and the relation of more described maximum temperature difference and set point, thus reflect whether wafer tilts.Compared to existing technology, method of the present invention is directly effective, can reflect whether tilt timely by the situation of temperature on hot plate; Further, by the control of IEMS system, can direct-detection go out occur product, thus process in time, such as carry out do over again (rework) in time, to improve the yield of product, bring great convenience to processing procedure, can by loss reduce as much as possible, and avoid scrap situation occur.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (7)
1. a method for detecting for wafer position inclination, for judging that whether wafer position when accepting baking is correct, comprising:
Place wafer on hot plate;
Keep wafer heats one time period, detecting real-time the maximum temperature difference be recorded in this time period on hot plate;
Whether the maximum temperature difference relatively in the described time period exceedes set point, if maximum temperature difference is less than set point, then and described wafer tilt.
2. the method for detecting of wafer position inclination as claimed in claim 1, it is characterized in that, described set point is 1 DEG C.
3. the method for detecting of wafer position inclination as claimed in claim 2, it is characterized in that, the described time period is 30s ~ 60s.
4. the method for detecting of wafer position inclination as claimed in claim 3, it is characterized in that, the comparative result whether maximum temperature difference in the described time period being exceeded set point is sent to IEMS system.
5. the method for detecting of wafer position inclination as claimed in claim 4, it is characterized in that, if the maximum temperature difference in the described time period is less than set point, then product is detained by IEMS system; If the maximum temperature difference in the described time period is more than or equal to set point, then wafer position is normal, and confirms to let pass.
6. the method for detecting of wafer position inclination as claimed in claim 1, it is characterized in that, described maximum temperature difference is the difference of maximum temperature and minimum temperature in the temperature detected in the described time period.
7. the method for detecting of wafer position inclination as claimed in claim 1, it is characterized in that, the temperature range of described hot plate is 90 ° ~ 150 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410123948.6A CN104952752A (en) | 2014-03-28 | 2014-03-28 | Method for detecting inclination of wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410123948.6A CN104952752A (en) | 2014-03-28 | 2014-03-28 | Method for detecting inclination of wafer |
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| CN104952752A true CN104952752A (en) | 2015-09-30 |
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| CN201410123948.6A Pending CN104952752A (en) | 2014-03-28 | 2014-03-28 | Method for detecting inclination of wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529280A (en) * | 2016-01-27 | 2016-04-27 | 武汉新芯集成电路制造有限公司 | Method for detecting whether wafer position inclines during baking process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020027942A1 (en) * | 2000-07-31 | 2002-03-07 | Tokyo Electron Limited | Judging method and processing apparatus |
| US20080249735A1 (en) * | 2007-04-05 | 2008-10-09 | United Microelectronics Corp. | Method and system for detecting tilt or shift of wafer transferred onto hot plate in real time, and method and system for monitoring baking process of wafers in real time |
| US20110174800A1 (en) * | 2008-09-30 | 2011-07-21 | Tokyo Electron Limited | Method of detecting abnormal placement of substrate, substrate processing method, computer-readable storage medium, and substrate processing apparatus |
| CN103474381A (en) * | 2013-09-22 | 2013-12-25 | 上海华力微电子有限公司 | Method utilizing temperature difference for monitoring positional deviation of wafer in high temperature cavity |
-
2014
- 2014-03-28 CN CN201410123948.6A patent/CN104952752A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020027942A1 (en) * | 2000-07-31 | 2002-03-07 | Tokyo Electron Limited | Judging method and processing apparatus |
| US20080249735A1 (en) * | 2007-04-05 | 2008-10-09 | United Microelectronics Corp. | Method and system for detecting tilt or shift of wafer transferred onto hot plate in real time, and method and system for monitoring baking process of wafers in real time |
| US20110174800A1 (en) * | 2008-09-30 | 2011-07-21 | Tokyo Electron Limited | Method of detecting abnormal placement of substrate, substrate processing method, computer-readable storage medium, and substrate processing apparatus |
| CN103474381A (en) * | 2013-09-22 | 2013-12-25 | 上海华力微电子有限公司 | Method utilizing temperature difference for monitoring positional deviation of wafer in high temperature cavity |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105529280A (en) * | 2016-01-27 | 2016-04-27 | 武汉新芯集成电路制造有限公司 | Method for detecting whether wafer position inclines during baking process |
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Application publication date: 20150930 |
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