CN104950590A - Metrology pattern layout and method of use thereof - Google Patents
Metrology pattern layout and method of use thereof Download PDFInfo
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- CN104950590A CN104950590A CN201510141230.4A CN201510141230A CN104950590A CN 104950590 A CN104950590 A CN 104950590A CN 201510141230 A CN201510141230 A CN 201510141230A CN 104950590 A CN104950590 A CN 104950590A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
- G06F30/392—Floor-planning or layout, e.g. partitioning or placement
Abstract
A metrology pattern layout and a method of use thereof are provided, the metrology pattern layout including a plurality of quadrants, in which quadrants a first wafer measurement pattern, a second wafer measurement pattern, a reticle registration pattern, and a reticle measurement pattern may be arranged to facilitate correlation of reticle metrology data with wafer metrology data. The reticle registration pattern may further include one or more outermost structural elements designed to protect other structural elements within the reticle measurement pattern from being modified in an optical proximity correction process. A method of optical proximity correction process is provided, in which a reticle measurement pattern may be obtained and classified to add or modify a rule set of the optical proximity correction process.
Description
Technical field
The present invention relates generally to the manufacture of circuit structure, particularly relate to the metering pattern layout for circuit structure.
Background technology
Manufacture integrated circuit usually to need the one or more layers on wafer or above wafer form multiple integrated circuit structure.These structures are formed often through lithographic process.This lithographic process can comprise light shield (reticle) (being also referred to as mask or photomask), and this light shield of UV light permeability transfers to wafer.This light shield is blocked in the light that will keep in not etched wafer area, and allow light to pass through will etched region.Lithographic process may also need measure (metrology) step, with guarantee in layer or interlayer structure appropriate size setting and aim at.On wafer, not only measure aligning need metering, and on light shield, need metering.In general, light shield metering can be performed independent of wafer metering.But, may be difficult to or light shield continuous data and wafer continuous data accurate correlation can not be made.Therefore, instrument is still needed to associate to make light shield measure to measure with wafer, to carry out more accurate circuit structure manufacture.
Summary of the invention
For overcoming the shortcoming of prior art and providing extra advantage, in an aspect, provide a kind of structure.This structure comprises: for the metering pattern layout of circuit structure, includes the multiple quadrants being beneficial to and arranging multiple metering pattern, comprising: for the first quartile of the first wafer measured pattern; For the second quadrant of the second wafer measured pattern; For the third quadrant of light shield to bit patterns; For the fourth quadrant of light shield measured pattern; Wherein, being furnished with of the plurality of quadrant is beneficial to the data obtained from this first and second wafer measured pattern and the data correlation obtained bit patterns from this light shield measured pattern and this light shield.
In another aspect, also provide a kind of method here.The method comprises: the optical near-correction process that will be applied to light shield, comprising: provide input graphics data; There is provided one or more rules of optical near-correction and pattern protection, wherein, this one or more rule is applicable to the layout of this light shield; Self-measuring pattern layout obtains light shield measured pattern; To classify this light shield measured pattern; Bias compensation table is applied to this one or more rule, this bias compensation table selects according to this classification of this light shield measured pattern; And output pattern data are provided.
Extra feature and advantage is realized by technology of the present invention.Here other embodiments of the invention and aspect is described in detail, as a part for the invention of request protection.
Accompanying drawing explanation
One or more aspect of the present invention is highlighted and be specifically termed example in the statement of the end of instructions.Above-mentioned and other object, feature and advantage of the present invention can be known by reference to the accompanying drawings with reference to detailed description below, wherein:
Figure 1A shows an example embodiment of the metering pattern layout according to one or more aspect of the present invention;
Figure 1B shows the metering pattern layout of the Figure 1A according to one or more aspect of the present invention, is furnished with example metering pattern in this metering pattern layout;
Fig. 2 A shows another example embodiment according to the metering pattern layout of one or more aspect of the present invention;
Fig. 2 B shows the metering pattern layout according to Fig. 2 A of one or more aspect of the present invention, is provided with example metering pattern in this metering pattern layout;
Fig. 2 C show according to Fig. 2 B of one or more aspect of the present invention metering pattern layout and metering pattern, wherein, light shield measured pattern comprises outermost structural element, to protect this pattern from amendment in optical near-correction process;
Fig. 2 D shows the metering pattern layout according to the later Fig. 2 C of one or more aspect half-twist of the present invention;
Fig. 2 E shows the metering pattern layout according to Fig. 2 A of one or more aspect of the present invention, is furnished with another Sets of Measurement pattern in this metering pattern layout;
Fig. 3 A shows an embodiment according to the metering pattern layout of one or more aspect of the present invention, and wherein, this metering pattern layout comprises the cruciform drawn area for additionally measuring pattern;
Fig. 3 B shows another embodiment according to the metering pattern layout of one or more aspect of the present invention, wherein, this metering pattern layout comprises square drawn area, and it forms the border of the remainder of this metering pattern layout, and this drawn area comprises one or more extra metering pattern;
Fig. 4 A shows an embodiment according to the metering pattern layout of one or more aspect of the present invention, and wherein, the accommodating multiple metering pattern of this metering pattern layout, to measure the aligning of the exposure layer of double patterning processing procedure;
Fig. 4 B shows the metering pattern layout according to Fig. 4 A of one or more aspect of the present invention, and it only comprises the metering pattern corresponding with the first exposure layer of double patterning processing procedure;
Fig. 4 C shows the metering pattern layout according to Fig. 4 A of one or more aspect of the present invention, and it only comprises the metering pattern corresponding with the second exposure layer of double patterning processing procedure;
Fig. 5 A shows an embodiment according to the metering pattern layout of one or more aspect of the present invention, is furnished with extra metering pattern example set in the drawn area of this metering pattern layout;
Fig. 5 B shows the metering pattern layout according to Fig. 5 A of one or more aspect of the present invention, is furnished with extra metering pattern alternative exemplary group in the drawn area of this metering pattern layout; And
Fig. 6 sums up the method comprising optical near-correction process according to one or more aspect of the present invention, wherein, uses light shield measured pattern to provide one or more rules of this optical near-correction process.
Embodiment
Aspect of the present invention and specific feature, advantage and details is explained more fully by referring to the non-limiting examples shown in accompanying drawing.Omit the explanation to known materials, fabrication tool, process technique etc., in order to avoid unnecessarily fuzzy the present invention in detail.But, should be appreciated that to illustrate the detailed description of aspect of the present invention and object lesson only exemplarily, and unrestricted.Will to understand in the spirit of the inventive concept on basis and/or scope from this exposure various substitutes for those skilled in the art, amendment, add and/or layout.
In one or more embodiments, for overcoming the shortcoming of previous measurement structure, structure provided here provides a kind of metering pattern layout for circuit structure, and it includes the multiple quadrants being beneficial to and arranging multiple metering pattern, comprising: for the first quartile of the first wafer measured pattern; For the second quadrant of the second wafer measured pattern; For the third quadrant of light shield to bit patterns; For the fourth quadrant of light shield measured pattern; Wherein, being furnished with of the plurality of quadrant is beneficial to the data obtained from this first and second wafer measured pattern and the data correlation obtained bit patterns from this light shield measured pattern and this light shield.
In extra embodiment; this fourth quadrant can comprise light shield measured pattern; this light shield measured pattern comprises multiple structural detail; wherein; one of them of the plurality of structural detail is outermost element, and this outermost element is through designing to protect the plurality of structural detail from amendment in optical near-correction (optical proximity correction) process.
In other embodiments, this metering pattern layout also can comprise drawn area (scribe area), and this drawn area can comprise additionally measures pattern, such as pattern identification metering pattern or double patterning metering pattern.Such as, this drawn area can form the border around the plurality of quadrant, or it can be positioned at metering pattern center, formed and separate the cruciform drawn area of the plurality of quadrant.
In another aspect, provide a kind of method comprising the optical near-correction process that will be applied to light shield here.This process comprises: provide input graphics data; There is provided one or more rules of optical near-correction and pattern protection, wherein, this one or more rule is applicable to the layout of this light shield; Self-measuring pattern layout obtains light shield measured pattern; To classify this light shield measured pattern; Bias compensation table is applied to this one or more rule, this bias compensation table selects according to this classification of this light shield measured pattern; And output pattern data are provided.
With reference to the accompanying drawings.For being conducive to understanding, these accompanying drawings are not drawn in proportion, and wherein, the same reference numerals used in different accompanying drawing represents same or similar assembly.
Figure 1A display has an embodiment of the metering pattern layout 100 of multiple quadrant, and it can be included on light shield or wafer.Pattern layout 100 comprises for the first quartile 110 of the first wafer metering pattern, for the second quadrant 120 of the second wafer metering pattern, for the third quadrant 130 of light shield to bit patterns and the fourth quadrant 140 for light shield measured pattern.At this shown in example, first quartile 110 and the second quadrant 120 are arranged in diagonal angle each other, and similarly, third quadrant 130 and fourth quadrant 140 are arranged in diagonal angle each other.Metering pattern layout 100 also can comprise drawn area 150.It is square that drawn area 150 can be as shown in the figure, and partly can form the border of metering pattern layout 100, is located in this drawn area to make the plurality of quadrant.Except the described metering pattern being arranged in the plurality of quadrant, drawn area 150 can have any width needed for accommodating one or more extra metering pattern.These additionally metering patterns can be used for the exposure layer etc. of pattern identification, aligned metal layer, aligning double patterning processing procedure, will be described in further detail below.Metering pattern layout 100 also can have the surface area on the light shield or wafer determined by the total length of this layout and overall width, comprise the plurality of quadrant and this drawn area, and this surface area can be enough little, to allow to arrange metering pattern layout 100 in the active pattern district of this light shield or wafer.Arrange in the active region of light shield or wafer pattern metering pattern layout (and included metering pattern) than in non-active (such as near the edge of this light shield or wafer) be provided with advantage, because it can provide continuous data more accurately.In addition, likely multiple metering pattern layout is set in several fates in active pattern district.This can be conducive to obtaining multiple local continuous data group, and to obtain data contrary with the metering pattern arranged in non-active.In one example in which, the surface area measuring pattern 100 can be less than about 25um
2.
Figure 1B shows the metering pattern layout 100 of Figure 1A and exemplary arrangement is located at the metering pattern in quadrant.Do not present the drawn area shown in Figure 1A in this example embodiment.The first wafer measured pattern 115 in first quartile 110 can be such as single structure element, such as single line segment as shown in the figure.In other example, the first wafer measured pattern 115 can comprise multiple structural detail.Light shield measured pattern 135 in third quadrant 130 also can be single structure element, such as single cross element as shown in the figure.The second wafer measured pattern 125 in second quadrant 120 can be the pattern similar with this this first wafer measured pattern, or can comprise multiple structural details as shown in the figure.As shown in this example embodiment, one or more in the described structural detail of the second wafer measured pattern 125 can be similar with this one or more structural detail of the first wafer measured pattern 115.Although this first wafer measured pattern may have different structural details from the second wafer measured pattern, as shown here, share similar structural detail by this first and second wafer measured pattern usually can be conducive to better performing the metering of wafer layer.Light shield measured pattern 145 in fourth quadrant 140 can be the pattern similar with the second wafer measured pattern 125.Light shield measured pattern 145 can comprise the additional structural element be not presented in the second wafer measured pattern 125, as hereafter in other embodiments as described in.Although this light shield measured pattern can have different patterns and structural detail from the second wafer measured pattern, but in general, when this light shield measured pattern and the second wafer measured pattern similar time, associating of the continuous data measured with wafer of continuous data that light shield measures may be conducive to most.
Compared with existing metering pattern layout, the metering pattern layout 100 shown in Figure 1A and 1B can realize several advantage.By arranging the second quadrant 120 as shown in Figure 1A and 1B and fourth quadrant 140, light shield measured pattern 145 and the second wafer measured pattern 125 can be arranged, associate to enable the continuous data from respectively this pattern obtains, thus be conducive to light shield continuous data to associate with wafer continuous data, as desired.In addition, third quadrant 130 can arrange that light shield is to bit patterns 135, measures pattern effectively isolate to make light shield to other in bit patterns 135 and metering pattern layout 100.When metering outfit scans, this can be conducive to reducing the distortion of light shield to bit patterns 135 to greatest extent.
Fig. 2 A shows another embodiment of metering pattern layout 200.Metering pattern layout 200 has multiple quadrant, comprises for the first quartile 210 of the first wafer metering pattern, for the second quadrant 220 of the second wafer metering pattern, for the third quadrant 230 of light shield to bit patterns and the fourth quadrant 240 for light shield measured pattern.At this shown in example, first quartile 210 and the second quadrant 220 are arranged in diagonal angle each other, and similarly, third quadrant 230 and fourth quadrant 240 are arranged in diagonal angle each other.Metering pattern layout 200 also can comprise drawn area 250.In this example embodiment, drawn area 250 is the cruciform drawn area arranged placed in the middle in metering pattern layout 200, separates the plurality of quadrant to make drawn area 250.Similar with the drawn area shown in Figure 1A, drawn area 250 can accommodating one or more extra metering pattern.Drawn area 250 also can have center 255, and it can accommodating metering pattern additionally.As explained in further detail below, these additionally measure the exposure layer etc. that pattern can be used for pattern identification, aligned metal layer, aligning double patterning processing procedure.As described in Figure 1A above, metering pattern layout 200 can have the surface area determined by the total length of the plurality of quadrant and drawn area and overall width, and this surface area can be enough little, to be conducive to arranging metering pattern 200 in the active region of light shield or wafer pattern.
Fig. 2 B shows the metering pattern layout 200 of Fig. 2 A and exemplary arrangement is located at the metering pattern in quadrant, and the metering pattern of these metering patterns and Figure 1A as above is similar.First quartile 210 comprises the first wafer measured pattern 215, second quadrant 220 and comprises the second wafer measured pattern 225, and third quadrant 230 comprises light shield to bit patterns, and fourth quadrant 240 comprises light shield measured pattern.Compared with existing metering pattern layout, metering pattern 200 can realize the advantage similar with measuring pattern 100.When the second quadrant 220 and fourth quadrant 240 are arranged as shown in Fig. 2 A and 2B, light shield measured pattern 245 and the second wafer measured pattern 225 can be arranged, associate to enable the continuous data from respectively this pattern obtains, thus be conducive to light shield continuous data to associate with wafer continuous data, as desired.In addition, third quadrant 230 can arrange that light shield is to bit patterns 235, measures pattern effectively isolate to make light shield to other in bit patterns 235 and metering pattern layout 200.When metering outfit scans, this can be conducive to reducing the distortion of light shield to bit patterns 235 to greatest extent.
Fig. 2 C shows the metering pattern 200 of Fig. 2 B, and it comprises the part of extra structural detail 260 as the light shield measured pattern 245 in fourth quadrant 240.Additional element 260 can be one or more outermost structural elements of light shield measured pattern 245, and can through design to protect other structural detail of light shield measured pattern 245 from amendment in optical near-correction process.In general, optical near-correction (OPC may be needed in patterned photomask; Optical Proximity Correction) process, to obtain the output pattern wanted on wafer.After the ideal pattern of design light shield, usually can perform OPC process on this light shield; When consider optical diffraction and dry penetrate and other known physical effect through the optical transport of light shield, when this process can analyze this pattern to determine experience lithographic process, how actual this ideal pattern can be printed on wafer, and increase or reduce the little correction to the structural detail of this pattern.These correct intention and compensate above-mentioned effect, to obtain the printing wafer pattern meeting ideal pattern as far as possible.But, in general, may not wish that the light shield allowing OPC process to revise similarly in light shield measures pattern, because the structural detail in pattern needs to form specific length, width and spacing usually, to provide continuous data accurately.OPC process may make these parameter distortions.But, when not having OPC to correct, some structural details in metering pattern but may the distortion because affecting the optical diffraction of the printing of the element of pattern outside or dry penetrating.For compensating these effects and avoiding amendment or infringement light shield measured pattern, one or more extra outermost element 260 can be added to light shield measured pattern 245.Outermost structural element 260 can have the corresponding size dimension that at least one size dimension is greater than other structural detail.In an example embodiment, to can be the twice of the predefine critical size (critical dimension) of light shield large for this at least one size dimension of outermost structural element 260.Therefore, when collecting continuous data from this light shield measured pattern, usually outermost structural element 260 is not considered, because they may not reflect the dimension of the circuit structure feature of equivalent layer.With such dimension, outermost structural element 260 can be enough to correct such as optical diffraction and dryly penetrate effect, can not revise multiple structural details less in light shield measured pattern 245 to make the OPC process of analysis pattern.In addition, or substitute in, outermost structural element 260 can add or change " rule " that use in rule-based OPC process.This OPC process can be configured to self-measuring pattern layout 200 and obtains light shield measured pattern 245 and to classify this pattern according to outermost structural element 260.This classification can be added or change the rule be applied in this OPC process, ignores light shield measured pattern 245, but still revise other area of the pattern of this light shield to make this OPC process be configured.
Fig. 2 D shows metering pattern layout 200 and the metering pattern 215,225,235,245 of Fig. 2 C, and half-twist is to illustrate the metering of same metering pattern how on the different layers of circuit structure.Such as, these layers can be two metal levels be formed at above wafer.For many circuit structures, the structural detail of the first metal layer formed is main or all facing one direction, and the structural detail being formed at the second metal level above this ground floor is main or all vertically in the direction of this first metal layer.The structural detail of these two metal levels usually can similar or even can be identical, and therefore, as half-twist, same light shield and wafer measured pattern are applicable to each metal level.Metering pattern layout 200 is conducive to this and rotates and provide a kind of layout, and the pattern layout of every layer be applicable in multiple layer by simple rotation easily can repeat this layout on the plurality of layer.It should be understood that this type of rotates the metering pattern layout 100 being also applicable to Figure 1A and 1B, and be not limited to measure pattern layout 200.
Fig. 2 E display metering pattern layout 200 has another Sets of Measurement pattern 270,275,280 and 285 and is located in multiple quadrant, to illustrate that disclosed metering pattern layout can be used for arranging the eurypalynous metering pattern of crowd of dissimilar circuit structure layer here.In the example shown, metering pattern 270,275,280 and 285 can be the metering pattern of guide hole layer, and this guide hole layer is between two metal levels of circuit structure; These metering patterns are also applicable to the circuit structure layer of other type.Metering pattern 285 in fourth quadrant 240 can be light shield measured pattern, and it can comprise one or more outermost element 290, to shield in OPC process.In the example shown in the figure, the plurality of structural detail of light shield measured pattern 285 can have two critical sizes; Like this, outermost element 290 can be greater than all the other structural details of the plurality of structural detail with respectively this critical size.It should be understood that this type of substitutes metering pattern and also can be located in the metering pattern layout 100 of Figure 1A and 1B, and be not limited to only for measuring pattern layout 200.
Fig. 3 A shows another embodiment with metering pattern layout 300 similar shown in Fig. 2 A, and wherein, the center 355 of cruciform drawn area 350 comprises extra metering pattern 360.In this example embodiment as shown in the figure, extra metering pattern 360 can such as double patterning aims at metering pattern.Or extra metering pattern 360 can be used as pattern identification pattern, or can in conjunction with pattern identification with aim at the function of measuring.In an example embodiment, extra metering pattern 360 can be four square blocks and arranges, wherein, in the ideal case, this layout is alignd the Bian Hejiao of described square block, as shown in Figure 3A.Other may be set in center 355 and additionally measure pattern, such as " frame center (box-in-box) " pattern.
Fig. 3 B shows another embodiment with metering pattern layout 305 similar shown in Figure 1A, and wherein, drawn area 350 comprises one or more extra metering pattern 360.Extra metering pattern 360 can be such as the pattern aiming at metering for double patterning.In shown example embodiment, extra metering pattern 360 can be located in drawn area 350, aligns with the imaginary line adjoining adjacent quadrants to make them.But, should be appreciated that extra metering pattern 360 can be arranged at the optional position in this drawn area, and without the need to symmetrical or arrange equally.
Fig. 4 A to 4C shows another embodiment with metering pattern layout 400 similar shown in Fig. 2 A and 3A, wherein, multiple metering pattern is arranged in all quadrants 410,420,430,440, thus except making light shield associate with wafer continuous data and except other function, being conducive to the aligning metering of double patterning processing procedure further.
Fig. 4 A shows the net result in conjunction with the first exposure layer of double patterning processing procedure and the metering pattern of the second exposure layer.In shown example embodiment, accommodating corresponding with two exposure layers of this double patterning processing procedure two of all quadrants measures pattern, but may use less quadrant in alternative embodiments, comprise two the metering patterns only comprising double patterning with a quadrant.Such as, the first wafer pattern 415 comprises the first wafer pattern of the first exposure layer and the first wafer pattern of the second exposure layer.Similarly, the second wafer pattern 425, illumination comprise the pattern corresponding with the first exposure layer of this double patterning processing procedure and the second exposure layer to bit patterns 435 and light exposure measurement pattern 445.Extra metering pattern 460 can be included in drawn area 450, with the aligning of this first exposure layer and the second exposure layer of measuring this double patterning processing procedure further.Light shield measured pattern 445 can have multiple outermost structural element through design, the plurality of outermost structural element is through designing with other structural detail protecting light shield measured pattern 445 in an OPC process or multiple OPC process.Such as, an OPC process can be applied before this first exposure layer of this double patterning layer of printing, and applied another OPC process before this second exposure layer of printing.Or, an OPC process can be applied to two exposure layers simultaneously.
The metering pattern layout 400 that Fig. 4 B shows Fig. 4 A only comprises the metering pattern of the first exposure layer.First wafer measured pattern 415a and the second wafer measured pattern 425a is located in first quartile 410 and 420 respectively, and light shield is located in third quadrant 435 bit patterns 435a.Here, the light shield measured pattern 445a in fourth quadrant 440 comprises one or more outermost structural element 470, and its intention protects other structural detail of light shield measured pattern 445a in OPC process, as previously mentioned.This OPC process can be applied before formation first exposure layer, also can apply before formation second exposure layer.The extra metering pattern 460a being arranged in the center of drawn area 450 can provide the aligned pattern corresponding with the first exposure layer, and such as, it can use in conjunction with the aligned pattern corresponding with the second exposure layer (as shown in Reference numeral in Fig. 4 A 460).
The metering pattern layout 400 that Fig. 4 C shows Fig. 4 A only comprises the metering pattern of the second exposure layer.First wafer measured pattern 415b and the second wafer measured pattern 425b is located in first quartile 410 and 420 respectively, and light shield is located in third quadrant 435 bit patterns 435b.Here, the light shield measured pattern 445b in fourth quadrant 440 comprises one or more outermost structural element 470, and its intention protects other structural detail of light shield measured pattern 445a in OPC process.This OPC process can be applied before formation second exposure layer, also can apply before formation first exposure layer.The extra metering pattern 460b being arranged in the center of drawn area 450 can provide the aligned pattern corresponding with the second exposure layer, and such as, it can use in conjunction with the aligned pattern corresponding with the first exposure layer (as shown in Reference numeral in Fig. 4 A 460).
Fig. 5 A and 5B shows the Additional examples of composition with metering pattern layout 500 similar shown in Fig. 2 A, wherein, arranges extra metering pattern so that the additional use of this drawn area to be described in the drawn area of metering pattern layout 500.Such as, Fig. 5 A shows the multiple additional pattern 570 be located in drawn area 550, and it can be aimed at double patterning, and to measure pattern corresponding.Additional pattern 570 can be similar with the additional pattern 560 of the center being arranged in drawn area 550.Equally exemplarily, multiple extra " frame center " pattern 580 in drawn area 550 is located in Fig. 5 B display, and it can be used for the aligning measuring two or more metal level.In example shown here, the additional pattern 560 being positioned at the center of this drawn area 550 can be pattern identification metering pattern, and not necessarily similar with additional pattern 580.Therefore, drawn area 550 can comprise the additional pattern 560,580 of multiple type, and it provides different function of measuring in same metering pattern layout 500.Such as, described extra metering pattern can to measure pattern corresponding with the aligning of guide hole layer (the guide hole contact layer such as formed between the two metal layers).
Be to be understood that, one or more metering patterns of any type are likely arranged here in multiple quadrant of disclosed metering pattern layout and/or drawn area, comprise the pattern do not clearly not stated here, and be all considered to fall within the scope of the present invention by all these different metering patterns of metering pattern layout placement disclosed here.
Fig. 6 sums up the method that will be applied to the optical near-correction of light shield measured pattern.This OPC process can be rule-based OPC process, and this rule-based OPC process is applied to light shield by predetermined regular group; But this OPC process also may be the OPC process based on model, wherein, the successive iteration amendment model of light shield is generated until find the best to revise.In 610, provide input graphics data group, it can from least part of derivation of mask set.In 620, provide one or more rules of optical near-correction and pattern protection.In general, can based on this input graphics data group selection rule group obtained from light shield.In 630, light shield measured pattern can be obtained by self-measuring pattern layout further.This light shield measured pattern can be the light shield measured pattern as described in detail in previous one or more embodiment, and can find in the metering pattern layout on light shield.This metering pattern layout also can be the metering pattern layout as described in detail in one or more embodiment above.In 640, usually to classify this light shield measured pattern according to one or more structural details of this pattern.This can comprise outermost structural element as in the previous embodiment.In 650, once do classification to this light shield measured pattern, just bias compensation table can be applied to regular group.This bias compensation table can provide one group of ad hoc rules, and wherein, any one ad hoc rules is corresponding with the classification of this light shield measurement pattern.Regular group (in 620) that described ad hoc rules obtains above can being added into or one or more rule can be changed.Finally, in 660, provide output pattern data.This can be the result this OPC process being applied to light shield.As the result of this process, this light shield measured pattern can keep not by this OPC process influence, as in order to obtain accurately, continuous data is desirably.As the result of this process, this light shield measured pattern also can measure the processing procedure limit of pattern close to other, such as one or more wafer measured pattern, these metering patterns can not apply one group of ad hoc rules through OPC process.
Here used term is only the object for specific examples is described, is not intended to limit the present invention.Unless explicitly pointed out in context, otherwise singulative used here " " and " being somebody's turn to do " are also intended to comprise plural form.(and arbitrary form comprise), " having " (and arbitrary form has) and " comprising " (comprising of arbitrary form) are all open connection verbs to it is also understood that term " comprises ".Therefore, the method for " comprising ", " having " or " comprising " one or more step or element or device have those one or more step or elements, but are not limited to only have those one or more step or elements.Similarly, the step of a kind of method of " comprising ", " having " or " comprising " one or more feature or a kind of element of device have those one or more features, but are not limited to only have those one or more features.
Here used term "available" and " may be " represent a series of conditional possibility; There is specific feature, characteristic or function; And/or modify another verb, by expressing one or more abilities, function or the mode of possibility that is associated with this modification verb is modified.Therefore, consider adorned term may sometimes inappropriate, can not or inappropriate certain situation, the use of "available" and " may be " represent adorned term be obviously suitable, competent or applicable shown in ability, function or purposes.Such as, in some cases, event or ability it is expected to, and in other cases, and event or ability can not occur-and this difference embodies by term "available" and " may be ".
Although illustrate here and show several aspect of the present invention, those skilled in the art can implement other aspect to reach identical object.Therefore, claim intention contains these type of alternative aspect all fallen in true spirit of the present invention and scope.
Claims (20)
1. a structure, comprising:
For the metering pattern layout of circuit structure, include the multiple quadrants being beneficial to and arranging multiple metering pattern, comprising:
First quartile, for the first wafer measured pattern;
Second quadrant, for the second wafer measured pattern;
Third quadrant, for light shield to bit patterns; And
Fourth quadrant, for light shield measured pattern;
Wherein, being furnished with of the plurality of quadrant is beneficial to the data obtained from this first and second wafer measured pattern and the data correlation obtained bit patterns from this light shield measured pattern and this light shield.
2. structure as claimed in claim 1, wherein, this first quartile relatively this second quadrant is that diagonal angle is arranged, and this three quadrant this fourth quadrant relative is that diagonal angle is arranged.
3. structure as claimed in claim 1, wherein, the layout of this first quartile is isolated in order to this light shield is measured pattern to other in bit patterns and the plurality of metering pattern through design part, to reduce the distortion of this light shield to bit patterns when metering outfit scans to greatest extent.
4. structure as claimed in claim 1; wherein; this fourth quadrant comprises this light shield measured pattern; this light shield measured pattern comprises multiple structural detail; wherein; at least one structural detail is at least one outermost structural element, and this at least one outermost structural element is through designing to protect the plurality of structural detail from amendment in optical near-correction process.
5. structure as claimed in claim 4, wherein, this at least one outermost structural element has the predefine critical size that at least one size dimension is greater than this light shield.
6. structure as claimed in claim 5, wherein, this at least one size dimension twice that is approximately large than this predefine critical size of this light shield.
7. structure as claimed in claim 4, wherein, this at least one outermost structural element is an outermost structural element in multiple outermost structural element.
8. structure as claimed in claim 1, wherein, one of them of the plurality of quadrant also helps layout two metering pattern, wherein, first exposure layer of the corresponding double patterning processing procedure of this first metering pattern, and the second exposure layer of this second metering pattern this double patterning processing procedure corresponding, these two metering patterns are conducive to covering metering (overlay metrology) of this double patterning processing procedure.
9. structure as claimed in claim 8, wherein, this fourth quadrant comprises the first light shield measured pattern and the second light shield measured pattern, this the first light shield measured pattern comprises multiple first structural details with at least one the first outermost structural element, this at least one first outermost structural element is through designing to protect the plurality of first structural detail from amendment in optical near-correction process, and this second light shield measured pattern comprises multiple second structural details with at least one the second outermost structural element, this at least one second outermost structural element is through designing to protect the plurality of second structural detail from amendment in optical near-correction process.
10. structure as claimed in claim 1, wherein, this metering pattern layout is the first metering pattern layout of the first metal layer through being designed for circuit structure design, and wherein, rotatable 90 ° of this first metering pattern layout measures pattern layout be provided for the second metal level of this circuit structure design second.
11. structures as claimed in claim 1, wherein, this metering pattern layout also comprises wherein one or more the adjacent drawn area with the plurality of quadrant, and this drawn area is conducive to arranging one or more extra metering pattern.
12. structures as claimed in claim 11, wherein, this drawn area is square drawn area, and this square drawn area forms the border of this pattern layout at least partly, and wherein, the plurality of quadrant is located in this square drawn area.
13. structures as claimed in claim 11, wherein, this drawn area comprises cruciform drawn area, and this cruciform drawn area is located in this pattern layout between two parties, and wherein, this drawn area separates the plurality of quadrant.
14. structures as claimed in claim 13, wherein, this cruciform drawn area also comprises center, and this center comprises pattern identification metering pattern, double patterning covers metering pattern or its combination.
15. structures as claimed in claim 11, wherein, this one or more extra metering pattern is that one or more double patterning covers metering pattern.
16. structures as claimed in claim 11, wherein, this one or more extra metering pattern is that one or more metal level covers metering pattern.
17. structures as claimed in claim 11, wherein, this one or more extra metering pattern is one or more guide hole layer metering pattern.
18. structures as claimed in claim 11, wherein, this metering pattern layout comprises the surface area determined, this surface area determined comprises the surface area of the plurality of quadrant and this drawn area, and this surface area determined is conducive to arranging this structure in the active region of mask pattern or in the active region of wafer pattern.
19. structures as claimed in claim 18, wherein, this surface area is less than about 25um2.
20. 1 kinds of methods, comprising:
The optical near-correction process of light shield measured pattern will be applied to, comprise:
Input graphics data is provided;
There is provided one or more rules of optical near-correction and pattern protection, wherein, this one or more rule is applicable to the layout of this light shield;
Self-measuring pattern layout obtains light shield measured pattern;
To classify this light shield measured pattern;
Bias compensation table is applied to this one or more rule, this bias compensation table selects according to this classification of this light shield measured pattern; And
Output pattern data are provided.
Applications Claiming Priority (2)
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| US14/228,611 | 2014-03-28 | ||
| US14/228,611 US9323882B2 (en) | 2014-03-28 | 2014-03-28 | Metrology pattern layout and method of use thereof |
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| CN104950590A true CN104950590A (en) | 2015-09-30 |
| CN104950590B CN104950590B (en) | 2017-09-01 |
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| CN201510141230.4A Expired - Fee Related CN104950590B (en) | 2014-03-28 | 2015-03-30 | Measure pattern layout and its application method |
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| US (2) | US9323882B2 (en) |
| CN (1) | CN104950590B (en) |
| TW (1) | TWI575335B (en) |
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| CN107133944A (en) * | 2017-04-27 | 2017-09-05 | 上海华虹宏力半导体制造有限公司 | Shape classification for OPC verification |
| CN107831636A (en) * | 2017-11-10 | 2018-03-23 | 上海华力微电子有限公司 | Rule-based OPC methods |
| CN111580338A (en) * | 2019-02-19 | 2020-08-25 | 华邦电子股份有限公司 | Pattern feature recognition method |
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| US10073354B2 (en) * | 2014-10-29 | 2018-09-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Exposure method of wafer substrate, manufacturing method of semiconductor device, and exposure tool |
| US10296702B2 (en) * | 2017-03-15 | 2019-05-21 | Applied Materials Israel Ltd. | Method of performing metrology operations and system thereof |
| US10120973B2 (en) | 2017-03-15 | 2018-11-06 | Applied Materials Israel Ltd. | Method of performing metrology operations and system thereof |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201543175A (en) | 2015-11-16 |
| US9864831B2 (en) | 2018-01-09 |
| CN104950590B (en) | 2017-09-01 |
| US9323882B2 (en) | 2016-04-26 |
| TWI575335B (en) | 2017-03-21 |
| US20150278426A1 (en) | 2015-10-01 |
| US20160196381A1 (en) | 2016-07-07 |
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