CN104950545A - Method for motivating surface plasma waves and excimers on non-metallic material and medium interfaces - Google Patents
Method for motivating surface plasma waves and excimers on non-metallic material and medium interfaces Download PDFInfo
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- CN104950545A CN104950545A CN201410115117.4A CN201410115117A CN104950545A CN 104950545 A CN104950545 A CN 104950545A CN 201410115117 A CN201410115117 A CN 201410115117A CN 104950545 A CN104950545 A CN 104950545A
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Abstract
The invention provides a method for motivating surface plasma waves and excimers on non-metallic material and medium interfaces. The method includes the following steps that preset non-metallic material, such as gallium arsenide is utilized to select media and serve as incident electromagnetic waves of an electromagnetic excitation source; the non-metallic material, the media and the wave length of the incident electromagnetic waves meet the following conditions that Re (epsilon <m>) is smaller than zero,/epsilon <m>/is larger than epsilon <d>; the epsilon <m> represents the relative dielectric constant of the non-metallic material, the Re (epsilon <m>) represents the real part of the relative dielectric constant of the non-metallic material, the epsilon <d> represents the relative dielectric constant of the media, and the/epsilon <m>/represents the absolute value of the epsilon <m>; the selected incident electromagnetic waves conduct simulation on the preset non-metallic material, and the surface plasma waves are motivated on the interfaces of the non-metallic material and the media. The invention further relates to a method for motivating surface plasma excimers on the non-metallic material and medium interfaces, a periodic structure is formed on the surface of the non-metallic material, then electromagnetic wave motivation is conducted, and the surface plasma excimers are generated.
Description
Technical field
The present invention relates to electromagnetic field and matter interaction field, in particular to a kind of in nonmetallic materials and medium interface excitating surface plasma wave and excite the method for plasmon.
Background technology
Surface plasmons (SPP) effect a kind ofly occurs in after the conductive material meeting particular requirement is subject to electric field excitation in air or other media, the collective resonance of the plasma wave that a kind of special photon produced on its surface and free electron are formed, its principle as shown in Figure 1.In prior art, a kind of mode of electromagnetic wave that SPP effect is normally interacted by the free electron of light and metal surface and formed, as shown in Figure 1, wherein material 1 is that surface includes free electron and can be inspired the conductive material of surface plasma-wave, can be called SPP material (the SPP material namely in figure); Material 2 is dielectric material (dieletric namely in figure), is generally air.
At present, surface plasmons is formed at light beam, has widespread use in the preparation, biological chemistry perception etc. of sub-wavelength structure and plasma apparatus.But excite limitation on the metal material for surface plasmons, and most metal can only produce stronger SPP effect (being generally visible light wave range) in certain wavelength coverage.
In semiconductor technology, in order to utilize SPP effect especially its local electric field enhancement function, more existing ways plate layer of metal film again on nonmetallic semiconductor material surface, and such as silver film, then etches the periodic structure that can excite SPP effect on this layer of silverskin.The drawback of this method is: (1) complex process, repeatable poor, and adds operation and cost; (2) Electromagnetic enhancement effect itself remains and occurs in metallic film surface, then is transmitted on semiconductor material such as gallium arsenide layer, its decreased effectiveness; (3) existence of metal film limits the performance of of GaAs device itself.
Summary of the invention
In view of the above-mentioned defect existed in prior art, the object of the invention is to provide a kind of method at nonmetallic materials and medium interface excitating surface plasma wave.
Another object of the present invention is also to provide a kind of method at nonmetallic materials and medium interface excitating surface plasmon.
For reaching above-mentioned purpose, the technical solution adopted in the present invention is as follows:
In a method for nonmetallic materials and medium interface excitating surface plasma wave, comprise the following steps:
Utilize predetermined nonmetallic materials to select medium and the incident electromagnetic wave as electric magnetization source, the wavelength of nonmetallic materials, medium and incident electromagnetic wave meets following condition:
Re (ε
m) <0 and | ε
m| > ε
d,
In formula, ε
mrepresent the relative dielectric constant of nonmetallic materials, Re (ε
m) represent the real part of relative dielectric constant of nonmetallic materials, ε
drepresent the relative dielectric constant of medium, | ε
m| represent ε
mabsolute value; And
With the incident electromagnetic wave of described selection, described predetermined nonmetallic materials are encouraged, excitating surface plasma wave on the interface of nonmetallic materials and medium.
In further embodiment, described predetermined nonmetallic materials are semiconductor material.
In further embodiment, described predetermined nonmetallic materials are gallium arsenide.
In further embodiment, described medium is air, and described incident electromagnetic wave adopts the ultraviolet in 124.6nm ~ 262.1nm wavelength coverage.
According to improvement of the present invention, another aspect of the present invention is also a kind of method proposing excitating surface plasmon in nonmetallic materials and medium interface, comprises the following steps:
Utilize predetermined nonmetallic materials to select medium and the incident electromagnetic wave as electric magnetization source, the wavelength of nonmetallic materials, medium and incident electromagnetic wave meets following condition:
Re (ε
m) <0 and | ε
m| > ε
d,
In formula, ε
mrepresent the relative dielectric constant of nonmetallic materials, Re (ε
m) represent the real part of relative dielectric constant of nonmetallic materials, ε
drepresent the relative dielectric constant of medium, | ε
m| represent ε
mabsolute value;
Periodic structure is formed at described predetermined non-metal material surface;
With the incident electromagnetic wave of described selection, the periodic structure in described nonmetallic materials is encouraged, excitating surface plasmon on the interface of nonmetallic materials and medium.
In further embodiment, the Cycle Length of described periodic structure calculates according to the following equation:
In formula, λ
sPthe Cycle Length of indication cycle's property structure, λ
0represent incident electromagnetic wave wavelength in a vacuum.
In further embodiment, a surface or two surfaces of described predetermined nonmetallic materials form periodic structure.
In further embodiment, described predetermined nonmetallic materials are semiconductor material.
In further embodiment, described predetermined nonmetallic materials are gallium arsenide.
In further embodiment, described medium is air, and described incident electromagnetic wave adopts the ultraviolet in 124.6nm ~ 262.1nm wavelength coverage.
In further embodiment, described periodic structure is the one in annular concentric periodic structure and striated periodic structure.
From the above technical solution of the present invention shows that, the method for proposed by the invention excitating surface plasma wave and plasmon in nonmetallic materials and medium interface, compared with prior art, its remarkable result is:
1) nonmetallic materials are adopted to be used for excitating surface plasma wave and surface plasmons phenomenon, breach the limitation that in the past must adopt metal excitating surface plasma wave and surface plasmons, make the application of surface plasma-wave expand nearly all material to;
2) utilize nonmetallic materials can excitating surface plasmon phenomenon, enormously simplify the technique in the past needing to carry out again etching after non-metal material surface metal-coated films, achieve and only need directly not realize surface plasmons effect by metallic film in nonmetallic materials;
3) adopt nonmetallic materials to realize surface plasmons, the semiconductor process techniques that present stage can be utilized very ripe, to process nonmetallic materials, significantly improves processing precision of products and processing quality product rate;
4) method of the present invention is utilized, in conjunction with the material with negative refractive index of present stage, can be implemented in excitating surface plasmon phenomenon on wave band on a large scale, make this technology can put in most Product Process, greatly extend the range of application of surface plasmons;
5) nonmetallic materials are utilized to realize surface plasmons phenomenon, greatly compensate for the deficiency (surface plasma-wave that current common metal material excite generally be confined to visible light wave range) of surface plasmons in wavelength coverage restriction that metal material excites, extend the wavelength coverage of surface plasmons application, thus should be used as deep ultraviolet wave band equiwavelength scope is well supplemented.
Accompanying drawing explanation
Fig. 1 is the principle schematic that surface plasma-wave of the present invention produces.
Fig. 2 is specific inductive capacity absolute value and the real part of permittivity schematic diagram of a semiconductor material gallium arsenide.
Fig. 3 is an exemplary plot of periodic structure used in an embodiment of the present invention, and wherein scheming (a) is vertical view, and figure (b) is side view.
Fig. 4 is for carrying out with periodic structure shown in Fig. 3 the reference structure schematic diagram that contrasts, and wherein scheming (a) is vertical view, and figure (b) is side view.
Fig. 5 utilizes the periodic structure of Fig. 3 gained electric field angular distribution figure at far field place under 248nm excitation.
Fig. 6 utilizes the reference structure of Fig. 4 gained electric field angular distribution figure at far field place under 248nm excitation.
Fig. 7 is another exemplary plot of periodic structure used in an embodiment of the present invention, and wherein scheming (a) is vertical view, and figure (b) is side view.
Embodiment
In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.
As shown in Figure 1, according to preferred embodiment of the present invention, a kind of method at nonmetallic materials and medium interface excitating surface plasma wave, comprises the following steps:
Utilize predetermined nonmetallic materials to select medium and the incident electromagnetic wave as electric magnetization source, the wavelength of nonmetallic materials, medium and incident electromagnetic wave meets following condition:
Re (ε
m) <0(formula 1)
And | ε
m| > ε
d(formula 2),
In formula, ε
mrepresent the relative dielectric constant of nonmetallic materials, Re (ε
m) represent the real part of relative dielectric constant of nonmetallic materials, ε
drepresent the relative dielectric constant of medium, | ε
m| represent ε
mabsolute value; And
With the incident electromagnetic wave of described selection, described predetermined nonmetallic materials are encouraged, excitating surface plasma wave on the interface of nonmetallic materials and medium.
As optional embodiment, described medium can select the one in the material of the material of negative permittivity or positive specific inductive capacity, such as air, water etc.
Comparatively preferably, described predetermined nonmetallic materials are semiconductor material.In the present embodiment, for gallium arsenide (GaAs), describe the realization of above-described embodiment method in detail.
Be illustrated in figure 2 a kind of real part of permittivity and specific inductive capacity absolute value schematic diagram of semiconductor material gallium arsenide, wherein solid line represents the real part curve of the specific inductive capacity of gallium arsenide, according to aforementioned formula (1), A, B 2 are two points that the real part of gallium arsenide specific inductive capacity equals 0, wherein A point coordinate is (111.7,0), B point coordinate is (262.1,0), then can obviously be found out by upper figure, when wavelength is between 111.7nm and 262.1nm, the real part of the specific inductive capacity of gallium arsenide is less than 0, and the specific inductive capacity of gallium arsenide now meets formula (1).
In Fig. 2, dotted line represents the absolute value curve of the specific inductive capacity of gallium arsenide, according to formula (2),, choose air as the medium contacted with gallium arsenide herein, then the specific inductive capacity of air is 1, C point is the point that the absolute value of the specific inductive capacity of gallium arsenide equals 1, C point coordinate is (124.6,1) herein, then according to upper figure, when wavelength is greater than 124.6nm, the absolute value of the specific inductive capacity of gallium arsenide is greater than 1, and now, the specific inductive capacity of gallium arsenide meets formula (2).
Therefore, when wavelength meets above-mentioned two scopes simultaneously time, the specific inductive capacity of gallium arsenide meets the condition producing surface plasma-wave, and the wavelength coverage also namely as the incident electromagnetic wave in electric magnetization source is [124.6,262.1], i.e. 124.6 ~ 262.1nm.
In the embodiment of alternative, for ease of carrying out the simulating, verifying of computing machine, wavelength coverage can be chosen for [125,260], namely 125 ~ 260nm carries out follow-up Computer Simulation, and this wave band is the electromagnetic wave of ultra-violet bands.
As another aspect of the present invention, also relate to a kind of method of excitating surface plasmon in nonmetallic materials and medium interface, compared to the above-mentioned method at nonmetallic materials and medium interface excitating surface plasma wave, produce surface plasmons to need to form periodic structure at non-metal material surface, then the electromagnetic wave of aforementioned selection is utilized, periodic structure in described nonmetallic materials is encouraged, excitating surface plasmon on the interface of nonmetallic materials and medium.
Periodic structure refers to and is forming periodic multiplet around structure centre in periphery, such as concentric annular, striated,
shape, U-shaped,
shape etc.
As optional embodiment, via hole, such as a circular vias can be designed in the center of periodic structure.
As optional embodiment, preceding cycles structure can be formed on of a nonmetallic materials surface, also all can form periodic structure on both surfaces.
In certain embodiments, in order to strengthen the generation of surface plasmons, the Cycle Length of preceding cycles structure calculates according to the following equation and limits:
In formula, λ
sPthe Cycle Length of indication cycle's property structure, λ
0represent incident electromagnetic wave wavelength in a vacuum.
Figure 3 shows that the example forming periodic structure at gallium arsenide surface, wherein, gallium arsenide adopts film morphology, forms a central circular via hole, form periodic multiple concentric ring in the periphery of circular vias on its surface.
As an embodiment, in Fig. 3, gallium arsenide film thickness is 120nm, the circular vias radius at center is 60nm, is 300nm at the exradius of distance center circular vias first donut, and inner circle radius is 180nm, corrosion depth on film is 24nm, the distance of second annulus distance, first annulus is 240nm, then calculates exradius and the inner circle radius of its peripheral annulus successively according to aforementioned formula 3, thus forms a periodic structure.Adopt which can form periodic structure on of a gallium arsenide film surface.
The periodic structure of lower floor's etching of gallium arsenide film and superstructure full symmetric, as shown in Figure 3, this concentric annular periodic structure is a similar buphthalmos structure.
Be illustrated in figure 4 the reference structure schematic diagram carrying out with periodic structure shown in Fig. 3 contrasting, in this reference structure, only there is a central circular via hole on gallium arsenide film surface.
In Fig. 3, Fig. 4, the arrow line of below represents incident electromagnetic wave direction, and the arrow line of top represents the outgoing electromagnetic wave direction after by film.
Figure 5 shows that utilize the periodicity buphthalmos structure of Fig. 3 under the excitation of 248nm ultraviolet electromagnetic ripple gained electric field at the angular distribution figure (simulated effect figure) at far field place, demonstrate the SPP effect produced by this periodic structure (buphthalmos structure) at gallium arsenide surface, directly inspire surface plasmons at gallium arsenide surface, electric field intensity in the film gains in depth of comprehension strengthens to very big.
Figure 6 shows that utilize the reference structure of Fig. 4 under 248nm ultraviolet electromagnetic wave excitation gained electric field at the angular distribution figure (simulated effect figure) at far field place, display do not have periodic structure then SPP effect be not excited, Electric Field Distribution is obviously disperseed.
Figure 7 shows that the schematic diagram of another embodiment of periodic structure, this periodic structure is striated periodic structure, and the Cycle Length of periodic structure preferably calculates according to above-mentioned formula 3.
In like manner, in this figure, the arrow line of below represents incident electromagnetic wave direction, and the arrow line of top represents the outgoing electromagnetic wave direction after by film.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (10)
1., in a method for nonmetallic materials and medium interface excitating surface plasma wave, it is characterized in that, comprise the following steps:
Utilize predetermined nonmetallic materials to select medium and the incident electromagnetic wave as electric magnetization source, the wavelength of nonmetallic materials, medium and incident electromagnetic wave meets following condition:
Re (ε
m) <0 and | ε
m| > ε
d,
In formula, ε
mrepresent the relative dielectric constant of nonmetallic materials, Re (ε
m) represent the real part of relative dielectric constant of nonmetallic materials, ε
drepresent the relative dielectric constant of medium, | ε
m| represent ε
mabsolute value; And
With the incident electromagnetic wave of described selection, described predetermined nonmetallic materials are encouraged, excitating surface plasma wave on the interface of nonmetallic materials and medium.
2. the method at nonmetallic materials and medium interface excitating surface plasma wave according to claim 1, it is characterized in that, described predetermined nonmetallic materials are semiconductor material.
3., in the method for nonmetallic materials and medium interface excitating surface plasma wave, it is characterized in that, described predetermined nonmetallic materials are gallium arsenide.
4. in the method for nonmetallic materials and medium interface excitating surface plasma wave, it is characterized in that, described medium is air, and described incident electromagnetic wave adopts the ultraviolet in 124.6nm ~ 262.1nm wavelength coverage.
5. the method for excitating surface plasmon in nonmetallic materials and medium interface, is characterized in that, comprise the following steps:
Utilize predetermined nonmetallic materials to select medium and the incident electromagnetic wave as electric magnetization source, the wavelength of nonmetallic materials, medium and incident electromagnetic wave meets following condition:
Re (ε
m) <0 and | ε
m| > ε
d,
In formula, ε
mrepresent the relative dielectric constant of nonmetallic materials, Re (ε
m) represent the real part of relative dielectric constant of nonmetallic materials, ε
drepresent the relative dielectric constant of medium, | ε
m| represent ε
mabsolute value;
Periodic structure is formed at described predetermined non-metal material surface;
With the incident electromagnetic wave of described selection, the periodic structure in described nonmetallic materials is encouraged, excitating surface plasmon on the interface of nonmetallic materials and medium.
6. the method for excitating surface plasmon in nonmetallic materials and medium interface according to claim 5, is characterized in that, the Cycle Length of described periodic structure calculates according to the following equation:
In formula, λ
sPthe Cycle Length of indication cycle's property structure, λ
0represent incident electromagnetic wave wavelength in a vacuum.
7. the method for excitating surface plasmon in nonmetallic materials and medium interface according to claim 5, is characterized in that, a surface or two surfaces of described predetermined nonmetallic materials form periodic structure.
8. the method for excitating surface plasmon in nonmetallic materials and medium interface according to claim 5, is characterized in that, described predetermined nonmetallic materials are gallium arsenide.
9. the method for excitating surface plasmon in nonmetallic materials and medium interface according to claim 8, is characterized in that, described medium is air, and described incident electromagnetic wave adopts the ultraviolet in 124.6nm ~ 262.1nm wavelength coverage.
10. the method for excitating surface plasmon in nonmetallic materials and medium interface according to claim 5, is characterized in that, described periodic structure is the one in annular concentric periodic structure, striated periodic structure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108615736A (en) * | 2016-12-11 | 2018-10-02 | 南京理工大学 | It is produced on the structure that optical sensor sensitivity can be improved of sensor surface |
| CN108615737A (en) * | 2016-12-11 | 2018-10-02 | 南京理工大学 | Make the structure that optical sensor sensitivity can be improved over the transparent substrate and application |
| CN108732122A (en) * | 2017-04-13 | 2018-11-02 | 南京理工大学 | A kind of terahertz imaging accurate positioning method based on surface plasmons |
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2014
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| CN102176521A (en) * | 2010-12-08 | 2011-09-07 | 南京邮电大学 | Terahertz surface plasma wave temperature control switch and control method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108615736A (en) * | 2016-12-11 | 2018-10-02 | 南京理工大学 | It is produced on the structure that optical sensor sensitivity can be improved of sensor surface |
| CN108615737A (en) * | 2016-12-11 | 2018-10-02 | 南京理工大学 | Make the structure that optical sensor sensitivity can be improved over the transparent substrate and application |
| CN108732122A (en) * | 2017-04-13 | 2018-11-02 | 南京理工大学 | A kind of terahertz imaging accurate positioning method based on surface plasmons |
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| CN104950545B (en) | 2018-10-12 |
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