CN108615736A - It is produced on the structure that optical sensor sensitivity can be improved of sensor surface - Google Patents
It is produced on the structure that optical sensor sensitivity can be improved of sensor surface Download PDFInfo
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- CN108615736A CN108615736A CN201611134820.5A CN201611134820A CN108615736A CN 108615736 A CN108615736 A CN 108615736A CN 201611134820 A CN201611134820 A CN 201611134820A CN 108615736 A CN108615736 A CN 108615736A
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- metal film
- sensor
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- improved
- sensitivity
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- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 230000035945 sensitivity Effects 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 230000005540 biological transmission Effects 0.000 claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 20
- 239000004332 silver Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 1
- 239000002086 nanomaterial Substances 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 7
- 238000005286 illumination Methods 0.000 abstract description 2
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 29
- 239000011148 porous material Substances 0.000 description 8
- 125000002619 bicyclic group Chemical group 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
Abstract
The invention discloses the structures that optical sensor sensitivity can be improved for being produced on sensor surface.The present invention utilizes the invalid in the photosensitive pixel of cmos sensor, by making some specially designed micro-nano structures on metal film, local transmitance can be made to greatly enhance, make optical signal that the illumination of invalid effectively gathered effective photosensitive sites after metal film, to improve the sensitivity of sensor.The specially designed micro-nano structure can easily be covered in the surface of the components such as photodetector, sensor, imaging device, achieve the effect that improve its sensitivity.It is suitable for the effective light transmission efficiency of other chip/structure/devices increases.
Description
Technical field
The present invention relates to the anti-reflection design method of metal film and micro-nano structure based on surface plasma-wave, especially a kind of systems
Make the structure that optical sensor sensitivity can be improved in sensor surface.
Background technology
How unremitting pursuit that the sensitivity of the photoelectric sensors such as CMOS be scientific worker is improved.It is currently being widely used
One of the photoelectric sensors such as CMOS is the problem of being difficult to avoid that：It is to have there was only area in each physical picture element
Photosensitive area is imitated, other invalids are used for preparation and the mating driving circuit of photographic department split-phase, ampere wires etc., are radiated at
The energy of light on this area is not received effectively, and waste is caused.Although people have by unremitting effort in recent years
Ratio shared by invalid is reduced to effect, but is limited to physical cause, it always can not be in 100% one pixel of utilization
The invalid of whole physical areas, operative sensor has even accounted for 70% or so of total elemental area.This is also to limit these
One key factor of photoelectric sensor sensibility.
Invention content
It is a kind of anti-reflection to incident optical signal progress part based on surface plasma-wave principle it is an object of the invention to propose
Metal film micro-nano structure, to make full use of the invalid of the photoelectric sensors pixel such as CMOS, to reach raising sensitivity
Effect.
Realize that the technical solution of the object of the invention is：It is a kind of be produced on sensor surface can be improved optical sensor spirit
The structure of sensitivity, CMOS photoelectric sensors or optical lens surface are coated with layer of metal film, and optical lens is placed on CMOS photoelectricity
On sensor, by several minor structures of array distribution on metal film, each minor structure is by center via and a series of concentric ring groups
At；Each minor structure is corresponded in the physical picture element of CMOS photoelectric sensors, at this time the geometric dimension period of array structure with
The physical picture element geometric dimension period of CMOS photoelectric sensors is same or similar；Minor structure includes light transmission part and opaque portion
Point, effective photosensitive part of photoelectric sensor physical picture element and the light transmission part of minor structure are corresponding, original to not interfere with
Photosensitive effect；Meanwhile the invalid photosensitive part of physical picture element and the lightproof part of minor structure are corresponding, and pass through minor structure
Lightproof part ring structure excitating surface plasma wave, the energy part of this part light is collected and from minor structure
Light transmission part transmissive, to reach antireflective effect.
It is identical as thickness of metal film that hole depth is crossed at center, and concentric ring etch depth is less than or equal to thickness of metal film half,
Middle thickness of metal film is in lambda1-wavelength magnitude.
Center crosses that hole depth is identical as thickness of metal film, and the ring etch depth near center via is film thickness, wherein
Thickness of metal film is in lambda1-wavelength magnitude.
The shape of peripheral period concentric ring structure is circle, triangle, square, diamond shape or other geometries.
Metal film using silver, gold, copper, aluminium or other can corresponding electromagnetic wave band excitating surface plasma wave metal or
It is prepared by other materials.
Compared with prior art, the present invention its remarkable result is：1）There is the effect that enhancing is assembled to effective light transmission energy, it can
So that photoelectric sensor collects fainter optical signal, its sensitivity is improved.2）Structure size is suitble to current main-stream CMOS
The pixel size of equal photoelectric sensors, can make full use of the invalid photosensitive region of pixel so that the structure is more convenient to answer
Device for present mainstream.3）The structure, without high request, does not need to change existing photoelectricity thus to accole in application
The structure and design of sensor only need to form micro-nano structure figure when use in the chip surface plated film of existing device, or in light
Plated film forms micro-nano structure figure on the subsidiary optical lens of electric transducer, or plated film forms micro-nano on transparent base material
Sensor chip or camera lens surface are attached to after structure graph again, easy to use, at low cost, effect is good, and stability is high.
Description of the drawings
Fig. 1 is single hole arrangements schematic diagram.
Fig. 2 is single hole single ring architecture schematic diagram.
Fig. 3 is single hole twin nuclei schematic diagram.
Fig. 4 is single hole tricyclic structure schematic diagram.
Fig. 5 is single hole array structure schematic diagram.
Fig. 6 is single hole monocycle array structure schematic diagram.
Fig. 7 is the bicyclic array structure schematic diagram of single hole.
Fig. 8 is single hole tricyclic array structure schematic diagram.
Fig. 9 is that single hole silver structure receives energy comparison diagram with the near fields single hole SiO2.
Figure 10 is that single hole silver array of structures receives energy comparison diagram with single hole silver structure near field.
Figure 11 is that single hole monocycle silver array of structures receives energy comparison diagram with single hole monocycle silver structure near field.
Figure 12 is that the bicyclic silver-colored array of structures of single hole receives energy comparison diagram with the bicyclic silver-colored structure near field of single hole.
Figure 13 is that single hole tricyclic silver array of structures receives energy comparison diagram with single hole tricyclic silver structure near field.
Figure 14 is that array silver structure receives energy comparison diagram with independent structure far field.
Figure 15, Figure 16 are the schematic diagrames of a micro-nano structure unit.
Specific implementation mode
The present invention is based on the local anti-reflection principle of surface plasma-wave, design one kind can be in the photoelectric sensors pixel such as CMOS
Originally the light energy being radiated on invalid photosensitive area, is passed through these by particulate metal film micro-nano structure of array surface attachment
Micro-nano structure on film, which is effectively collected, to be transmitted at effective photosensitive area, so as to promote the sensitive of photoelectric sensor
Degree.
It is identical as thickness of metal film that hole depth is crossed at center, and donut structure etch depth is less than thickness of metal film.Wherein
For thickness of metal film in lambda1-wavelength magnitude, groove etching depth is film thickness half or so.Micro-nano structure can be directly in CMOS
Plated film realization is carried out on the chip of equal photoelectric sensors, each structural unit in micro-nano structure is corresponded in light such as CMOS
The physics photosensitive pixel of electric transducer, the at this time physics of the photoelectric sensors such as the geometric dimension period of micro-nano array structure and CMOS
The pixel geometry size period is same or similar.
One micro-nano structure unit of a corresponding physical picture element is as shown in Figure 15,16, and wherein dash area is etched part
Point；Micro-nano structure as shown in the figure, including the periodical convex-concave circle of central through-hole and periphery are made by etching on metal film
Ring structure, it is anti-reflection at central through-hole to play the role of to excite the surface plasma-wave in corresponding electromagnetic wavelength.
The shape of peripheral periodic structure can be circle, triangle, square, diamond shape or other geometries.
The structural unit is arranged in period row-column configuration, and a pair of with the physical picture element one on the photoelectric sensors such as CMOS
It answers.Using silver, gold, copper, aluminium or other can come in the metal or other materials of corresponding electromagnetic wave band excitating surface plasma wave
Prepare the micro-nano structure.Can be film thickness near paracentral ring etch depth.
The application example of the present invention is made into one by taking most often applied visible light wave range and silverskin as an example below in conjunction with the accompanying drawings
Step detailed description.
Effective photosensitive part of physical picture element and the light transmission part of metal film structures are corresponding, original to not interfere with
Photosensitive effect；Meanwhile the invalid photosensitive part of physical picture element and the lightproof part of metal film structures are corresponding, and by gold
The lightproof part for belonging to membrane structure carries out some special micro-nano structure design excitating surface plasma waves, with this part light
Energy part collects and from the light transmission part transmissive of metal film structures, to reach antireflective effect, finally same
Make under the conditions of sample incidence photoreceptor it is effective it is photosensitive be partially received higher light intensity, be presented as the photosensitive of photoreceptor physical picture element
Sensitivity is improved.
For example, in wavelength band 850nm.Silver film thickness is 500nm, etching groove depth 250nm.Single structure is close
There is apparent aggregation enhancing effect in field to light beam.There is more obviously aggregation enhancing effect to light beam in position array structure farther out.
Single structure and array structure using the position that critical point is sensor distance structure about 30um.
Fig. 1 single hole arrangements schematic diagrames
Pore radius 0.92um.
Fig. 2 single hole single ring architecture schematic diagrames
Pore radius 0.92um, ring period 1.68um.
Fig. 3 single hole twin nuclei schematic diagrames
Pore radius 0.92um, ring period 0.84um.
Fig. 4 single hole tricyclic structure schematic diagrames
Pore radius 0.92um, ring period 0.56um.
Fig. 5 single hole array structure schematic diagrames
Pore radius 0.92um, array period 5.2um.
Fig. 6 single hole monocycle array structure schematic diagrames
Pore radius 0.92um, ring period 1.68um, array period 5.2um.
The bicyclic array structure schematic diagram of Fig. 7 single holes
Pore radius 0.92um, ring period 0.84um, array period 5.2um.
Fig. 8 single hole tricyclic array structure schematic diagrames
Pore radius 0.92um, ring period 0.56um, array period 5.2um.
Fig. 9 single hole silver structures receive energy comparison diagram with the near fields single hole SiO2
Abscissa is distance of the collector apart from sample, and ordinate is the energy of collector acquisition.In near field, the structure is collected
To energy be significantly greater than the energy that equal area under direct illumination obtains.
Figure 10 single hole silver arrays of structures receive energy comparison diagram with single hole silver structure near field
In near field, the energy that the independent structure is collected into is significantly greater than the energy that the array structure equal area obtains.
Figure 11 single holes monocycle silver array of structures receives energy comparison diagram with single hole monocycle silver structure near field
In near field, the energy that the independent structure is collected into is significantly greater than the energy that the array structure equal area obtains.
The bicyclic silver-colored array of structures of Figure 12 single holes receives energy comparison diagram with the bicyclic silver-colored structure near field of single hole
In near field, the energy that the independent structure is collected into is significantly greater than the energy that the array structure equal area obtains.
Figure 13 single holes tricyclic silver array of structures receives energy comparison diagram with single hole tricyclic silver structure near field
In near field, the energy that the independent structure is collected into is significantly greater than the energy that the array structure equal area obtains.
Figure 14 array silver structures receive energy comparison diagram with independent structure far field
In far field, a series of energy that array structures are collected into is significantly greater than the energy of independent structure equal area acquisition.
In conclusion the present invention makes a series of specially designed micro-nano structures on metal film.Incident light irradiates herein
On micro-nano structure, excitating surface plasma wave, light energy is propagated along body structure surface, and peripheral structure passes light energy at light transmission
It broadcasts, is gathered at window and passes through metal film, to play the antireflective effect in part.The design be also applied for other chip/structures/
The effective light transmission efficiency of device increases.
Claims (5)
1. a kind of structure that optical sensor sensitivity can be improved being produced on sensor surface, it is characterised in that：CMOS photoelectric transfers
Sensor or optical lens surface metal-plated membrane, optical lens are placed on CMOS photoelectric sensors, by array point on metal film
Several minor structures of cloth, each minor structure are made of center via and a series of concentric rings；Each minor structure correspond in
The physical picture element of CMOS photoelectric sensors, the at this time physical picture element in the geometric dimension period and CMOS photoelectric sensors of array structure
The geometric dimension period is same or similar；Minor structure includes light transmission part and lightproof part, and photoelectric sensor physical picture element has
The light transmission part for imitating photosensitive part and minor structure is corresponding；Meanwhile physical picture element invalid photosensitive part and minor structure it is impermeable
Light part is corresponding, and by the ring structure excitating surface plasma wave of the lightproof part of minor structure, with this part light
It collects and from the light transmission part transmissive of minor structure in energy part.
2. the structure that optical sensor sensitivity can be improved according to claim 1 for being produced on sensor surface, feature
It is：It is identical as thickness of metal film that hole depth is crossed at center, and concentric ring etch depth is less than or equal to thickness of metal film half, wherein gold
Belong to film thickness in lambda1-wavelength magnitude.
3. the structure that optical sensor sensitivity can be improved according to claim 1 for being produced on sensor surface, feature
It is：Center crosses that hole depth is identical as thickness of metal film, and the ring etch depth near center via is film thickness, wherein metal
Film thickness is in lambda1-wavelength magnitude.
4. the structure that optical sensor sensitivity can be improved for being produced on sensor surface according to claim 1-3, special
Sign is：The shape of peripheral period concentric ring structure is circle, triangle, square, diamond shape or other geometries.
5. the structure that optical sensor sensitivity can be improved for being produced on sensor surface according to claim 1-3, special
Sign is：Metal film using silver, gold, copper, aluminium or other can corresponding electromagnetic wave band excitating surface plasma wave metal or
It is prepared by other materials.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611134820.5A CN108615736A (en) | 2016-12-11 | 2016-12-11 | It is produced on the structure that optical sensor sensitivity can be improved of sensor surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611134820.5A CN108615736A (en) | 2016-12-11 | 2016-12-11 | It is produced on the structure that optical sensor sensitivity can be improved of sensor surface |
Publications (1)
| Publication Number | Publication Date |
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| CN108615736A true CN108615736A (en) | 2018-10-02 |
Family
ID=63643639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611134820.5A Pending CN108615736A (en) | 2016-12-11 | 2016-12-11 | It is produced on the structure that optical sensor sensitivity can be improved of sensor surface |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725059A (en) * | 2005-07-08 | 2006-01-25 | 中国科学院光电技术研究所 | Realize the method for electromagnetic wave function element based on metal micro-nanostructure |
| CN101459185A (en) * | 2007-12-11 | 2009-06-17 | 三星电子株式会社 | Photodiodes, image sensing devices and image sensors |
| DE102008011793A1 (en) * | 2008-02-29 | 2009-09-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | multispectral sensor |
| US20110063717A1 (en) * | 2008-05-20 | 2011-03-17 | Universite De Technologie De Troyes | High-efficiency device for focusing light to subwavelength dimensions |
| US20110155891A1 (en) * | 2009-12-28 | 2011-06-30 | Sony Corporation | Semiconductor device and electronic apparatus |
| JP2013195697A (en) * | 2012-03-19 | 2013-09-30 | Fujifilm Corp | Photosensitive coloring composition, color filter, method for manufacturing color filter and liquid crystal display device |
| CN104950545A (en) * | 2014-03-26 | 2015-09-30 | 南京理工大学 | Method for motivating surface plasma waves and excimers on non-metallic material and medium interfaces |
-
2016
- 2016-12-11 CN CN201611134820.5A patent/CN108615736A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1725059A (en) * | 2005-07-08 | 2006-01-25 | 中国科学院光电技术研究所 | Realize the method for electromagnetic wave function element based on metal micro-nanostructure |
| CN101459185A (en) * | 2007-12-11 | 2009-06-17 | 三星电子株式会社 | Photodiodes, image sensing devices and image sensors |
| DE102008011793A1 (en) * | 2008-02-29 | 2009-09-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | multispectral sensor |
| US20110063717A1 (en) * | 2008-05-20 | 2011-03-17 | Universite De Technologie De Troyes | High-efficiency device for focusing light to subwavelength dimensions |
| US20110155891A1 (en) * | 2009-12-28 | 2011-06-30 | Sony Corporation | Semiconductor device and electronic apparatus |
| JP2013195697A (en) * | 2012-03-19 | 2013-09-30 | Fujifilm Corp | Photosensitive coloring composition, color filter, method for manufacturing color filter and liquid crystal display device |
| CN104950545A (en) * | 2014-03-26 | 2015-09-30 | 南京理工大学 | Method for motivating surface plasma waves and excimers on non-metallic material and medium interfaces |
Non-Patent Citations (1)
| Title |
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| 庞凯: "SPR传感的金属膜系优化设计及重金属检测研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 * |
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