CN104947192B - A kind of Ca-Ti ore type SrIrO3The preparation method of monocrystal thin films material - Google Patents
A kind of Ca-Ti ore type SrIrO3The preparation method of monocrystal thin films material Download PDFInfo
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Abstract
The present invention provides a kind of Ca-Ti ore type SrIrO3The preparation method of monocrystal thin films material, includes the following steps：S1：One Ca-Ti ore type substrate is provided；S2：The substrate is started the cleaning processing；S3：The substrate is made annealing treatment；S4：Ir simple substance target evaporation source, the simple substance target evaporation source Sr and oxygen source are used in oxide molecule beam epitaxy system, in the substrate surface epitaxial growth Ca-Ti ore type SrIrO3Monocrystal thin films material.The present invention utilizes oxide molecule beam epitaxy technology, by ultrahigh vacuum device hardware, the selection of simple substance evaporation source, stable evaporation source line control, the selection of substrate, the processing of substrate, Film synthesis parameter stability contorting, the Ca-Ti ore type SrIrO of high quality is prepared3Monocrystal thin films material.The monocrystal thin films possess very big advantage compared to body material, and the perovskite structure with stable state, epitaxial film surface is natural smooth cleavage surface, are advantageously implemented the test of electronic structure, and the high-cleanness, high of sample surfaces goes on smoothly test more.
Description
Technical field
The invention belongs to materials synthesis fields, are related to a kind of Ca-Ti ore type SrIrO3The preparation method of monocrystal thin films material.
Background technique
The transition metal oxide material of transition metal oxide (TMOs) the especially orbital electron containing 3d is constantly subjected to section
The extensive concern of personnel is ground, because many important physical phenomenons are had been found that in this kind of material, such as：High-temperature superconductor, iron
Electrically, huge magnetic resistance, Mo Te insulation state, topology insulation state, two-dimensional electron gas etc..For 4d, 5d electron system, because of d electronics
The increase of track, this kind of material have smaller electron correlation effects, and theory before foretells that this kind of material should have more
Good metallic conductivity.But nearest research finds that they show unusual physical behavio(u)r, the especially iridium of the electronics containing 5d
The quasi- two-dimensional material Sr of oxide2IrO4It is a kind of insulator, which results in everybody interest.Finding this phenomenon after study is
Since (biggish atomic radius causes with the coefficient result of electron correlation effects for the Quantum geometrical phase of same size order
Biggish Effect of Spin-orbit Coupling (SOC)).Simultaneously as theory foretells this there are biggish Effect of Spin-orbit Coupling
Class system may realize many unusual quantum appearances, including：Topological Mott insulator, Quantum Spin Hall effect are unusual
Quantum hall effect, roller insulator, Wei Er semimetal even high-temperature superconductor.
In the multiple functions materials such as current piezoelectricity, superconduction, magneto-resistor, catalysis, ion conductor, the material with perovskite structure
Material accounts for important proportion, therefore perovskite structural material is also one of the hot spot of present material field of scientific study.
Perovskite structure general formula can use ABO3It expresses, crystal structure is cubic system is a kind of metal composite oxide,
Wherein, A ions are generally alkaline earth or rare earth ion, meet rA>0.090nm, B ions are generally transition metal ions, full
Sufficient rB>0.051nm.Typical perovskite structural material is CaTiO3。
Perovskite structure has following features：1) oxygen octahedra is total to vertex connection, three-dimensional network is formed, according to Pauling
Coordination polyhedrom concatenate rule, such structure than total rib, coplanar connection stablize；2) top connection makes between oxygen octahedra network altogether
Void ratio it is big when being total to rib, coplanar connection, allow larger size ion to insert, even if generating a large amount of crystal defects, or each
When the size and geometry for forming ion require to have greater difference, stable structure can still be maintained, and be conducive to oxygen and defect
Diffusive migration.
As with Sr2IrO4The three-dimensional compound material similar with system, the SrIrO of perovskite structure3Being considered as can be with
The crucial fertile material for realizing topological state is modulated by superlattices artificial micro-structure.Although in terms of having had some transport at present
The relevant report of experiment, it was demonstrated that SrIrO3It is the material of semimetal behavior, but about SrIrO3Electronic structure we still know
It is few.To test SrIrO3Electronic band structure we must make sample have clean enough, even curface, this is right
It is the SrIrO of hexagonal structure under normal pressure3Body material is difficult to realize.
For the difficulty for overcoming electronic structure to test, need to obtain a kind of SrIrO of perovskite structure stable under normal pressure3
Monocrystal thin films material, and can guarantee that sample surfaces are smooth enough and clean.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of Ca-Ti ore type SrIrO3Monocrystalline
The preparation method of thin-film material, for solving existing SrIrO3The problem of single crystal material cannot be tested.
In order to achieve the above objects and other related objects, the present invention provides a kind of Ca-Ti ore type SrIrO3Monocrystal thin films material
Preparation method, include the following steps：
S1：One Ca-Ti ore type substrate is provided；
S2：The substrate is started the cleaning processing；
S3：The substrate is made annealing treatment；
S4：Ir simple substance target evaporation source, the simple substance target evaporation source Sr and oxygen source are used in oxide molecule beam epitaxy system,
The substrate surface epitaxial growth Ca-Ti ore type SrIrO3Monocrystal thin films material.
Optionally, the Ca-Ti ore type substrate is LSAT, GdScO3Or SrTiO3。
Optionally, in the step S2, the organic impurities of the substrate surface absorption are removed using acetone.
Optionally, the step S2 is comprised the following processes：By the substrate be sequentially placed into acetone, alcohol, in isopropanol into
Row ultrasonic cleaning.
Optionally, the substrate is put into acetone, alcohol, the time being cleaned by ultrasonic in isopropanol are 1~60 point
Clock.
Optionally, after final step ultrasonic cleaning, the substrate is dried up using nitrogen.
Optionally, in the step S3, the annealing is comprised the following processes：
The substrate is passed to vacuum chamber, and is heated to the first temperature；
Oxygen is passed through in the vacuum chamber again, and continues to be heated to second temperature；The second temperature is higher than the first temperature
Degree；
The substrate is kept the temperature into preset time under the second temperature.
Optionally, first temperature is 100~400 DEG C, and the second temperature is 500~900 DEG C, the preset time
It is 5~100 minutes.
Optionally, in the step S4, epitaxial growth Ca-Ti ore type SrIrO3When monocrystal thin films material, the list of Sr and Ir
Matter line ratio is greater than or equal to 1.
Optionally, the simple substance line ratio of Sr and Ir is 1.001~1.1.
Optionally, in the step S4, epitaxial growth Ca-Ti ore type SrIrO3When monocrystal thin films material, underlayer temperature is
500~600 DEG C.
Optionally, in the step S4, the oxygen source is ozone.
Optionally, in epitaxial process, the air pressure of the ozone is 1E-7~1E-5Torr.
As described above, Ca-Ti ore type SrIrO of the invention3The preparation method of monocrystal thin films material has below beneficial to effect
Fruit：The present invention utilizes oxide molecule beam epitaxy technology, passes through ultrahigh vacuum device hardware, the selection of simple substance evaporation source, stabilization
The control of evaporation source line, the selection of substrate, the processing of substrate, Film synthesis parameter stability contorting, high quality is prepared
Ca-Ti ore type SrIrO3Monocrystal thin films material.The monocrystal thin films possess very big advantage compared to body material, epitaxial growth
SrIrO3Monocrystal thin films have the perovskite structure of stable state, this is most important for further scientific research；Secondly, super
The epitaxial film surface grown under high vacuum is natural smooth cleavage surface, is advantageously implemented the test of electronic structure；Again, surpass
High vacuum further ensures the cleanliness of sample surfaces, goes on smoothly test more.
Detailed description of the invention
Fig. 1 is shown as Ca-Ti ore type SrIrO of the invention3The process flow chart of the preparation method of monocrystal thin films material.
Fig. 2 is shown as the SrIrO grown on LSAT substrate3The RHEED image of film.
Fig. 3 is shown as GdScO3The SrIrO grown on substrate3The RHEED image of film.
Fig. 4 is shown as SrTiO3The SrIrO grown on substrate3The RHEED image of film.
Fig. 5 is shown as the SrTiO without leading to oxygen and high annealing3The SrIrO grown on substrate3The RHEED of film schemes
Picture.
Fig. 6 is shown pass by the SrTiO of logical oxygen and the high temperature anneal3The SrIrO grown on substrate3The RHEED of film
Image.
Fig. 7 be shown as epitaxial growth temperature it is excessively high when SrTiO3The SrIrO grown on substrate3The RHEED image of film.
Fig. 8 be shown as epitaxial growth temperature it is too low when SrTiO3The SrIrO grown on substrate3The RHEED image of film.
Fig. 9 be shown as epitaxial growth temperature it is more excellent when SrTiO3The SrIrO grown on substrate3The RHEED image of film.
Component label instructions
S1~S4 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 1 is please referred to Fig. 9.It should be noted that diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of Ca-Ti ore type SrIrO3The preparation method of monocrystal thin films material, referring to Fig. 1, being shown as this
The process flow chart of method, includes the following steps：
S1：One Ca-Ti ore type substrate is provided；
S2：The substrate is started the cleaning processing；
S3：The substrate is made annealing treatment；
S4：Ir simple substance target evaporation source, the simple substance target evaporation source Sr and oxygen source are used in oxide molecule beam epitaxy system,
The substrate surface epitaxial growth Ca-Ti ore type SrIrO3Monocrystal thin films material.
Below by the specific example Ca-Ti ore type SrIrO that the present invention will be described in detail3The preparation side of monocrystal thin films material
Method process：
Step S1 is first carried out：One Ca-Ti ore type substrate is provided.
Specifically, the Ca-Ti ore type substrate is to include but is not limited to LSAT, GdScO3Or SrTiO3.Wherein, LSAT
((La,Sr)(Al,Ta)O3, strontium aluminate tantalum lanthanum) monocrystal chip is a kind of more mature no mythical bird like the phoenix crystalline substance perovskite crystal, with height
Temperature superconductive body and many oxide material have more intact matching.GdScO3(scandium acid gadolinium) is usually the monocrystal substrate of 001 crystal orientation.
SrTiO3(strontium titanates) has typical perovskite structure, is toxic chemicals, is a kind of widely used electric function
Ceramic material has many advantages, such as that dielectric constant is high, dielectric loss is low, thermal stability is good, is widely used in electronics, machinery and ceramics
Industry；Meanwhile as a kind of functional material, strontium titanates has the characteristics that forbidden bandwidth high (3.4eV), photocatalytic activity are excellent,
And there is unique electromagnetic property and redox catalysis activity, in photocatalytic hydrogen production by water decomposition, photocatalytic degradation organic contamination
The photocatalysis fields such as object and photochemical cell are also widely used.
As an example, described Ca-Ti ore type LSAT, GdScO3Or SrTiO3Substrate can directly adopt commercial monocrystalline base
Piece, surface flatness with higher.In the present embodiment, the substrate preferably uses SrTiO3Substrate.
Then step S2 is executed：The substrate is started the cleaning processing.The purpose of cleaning treatment mainly removes substrate table
The organic impurities of face absorption are subsequent growth Ca-Ti ore type SrIrO3Monocrystal thin films material provides a clean surface, drop
The probability that low defect generates.
Cleaning treatment uses organic solvent, in the present embodiment, it is preferred to use acetone is cleaned by ultrasonic.Certainly, other
In embodiment, it can also be cleaned using other organic solvents, should not excessively be limited the scope of the invention herein.
In order to avoid secondary pollution, using acetone carry out ultrasonic cleaning and then by the substrate be sequentially placed into alcohol,
It is cleaned by ultrasonic in isopropanol.The substrate is put into acetone, alcohol, the time being cleaned by ultrasonic in isopropanol are 1
~60 minutes.
As an example, cleaning is divided into four steps：The first step was with acetone ultrasound 20 minutes, it is therefore an objective to wash off substrate surface absorption
Organic matter；Second step was with alcohol ultrasound 20 minutes, in order to wash off the remaining acetone of substrate surface；Third step isopropanol
Ultrasound 5 minutes, in order to wash off the remaining alcohol of substrate surface, and isopropanol itself can volatilize rapidly, Bu Hui
Substrate surface residual；4th step is quickly dried up substrate with high pure nitrogen.
Then step S3 is executed：The substrate is made annealing treatment.The purpose of annealing is to make substrate surface part
Atom is reset, and is subsequent growth high quality Ca-Ti ore type SrIrO to repair the defect of substrate surface3Monocrystal thin films material
Material provides more preferably platform.
In the present embodiment, annealing carries out in oxide molecule beam epitaxy system.Oxide molecule beam epitaxy system
For ultrahigh vacuum device hardware, in the present embodiment, it is desirable that system base vacuum is better than 3E-9Torr.
As an example, the annealing comprises the following processes：
1) substrate is passed to vacuum chamber, and is heated to the first temperature；
2) oxygen is passed through in the vacuum chamber again, and continues to be heated to second temperature；The second temperature is higher than first
Temperature；
3) substrate is kept the temperature into preset time under the second temperature.
It is that substrate oxygen lacks in order to prevent by the purpose for starting logical oxygen after silicon to the first temperature in the present embodiment
Sunken appearance.The second temperature is substrate holding temperature, and the reparation of substrate occurs mainly in soak process.
As an example, first temperature is 100~400 DEG C, the second temperature is 500~900 DEG C, when described default
Between be 5~100 minutes.In the present embodiment, first temperature is preferably 300 DEG C, and the second temperature is preferably 700 DEG C, institute
Stating preset time is preferably 30 minutes.
As an example, the vacuum degree of vacuum chamber is 1E-8Torr before logical oxygen, lead to after oxygen, the vacuum of vacuum chamber
Degree is 2E-6Torr.In other implementations are opened, the vacuum degree of the vacuum chamber can be adjusted flexibly according to the actual situation, herein
It should not excessively limit the scope of the invention.
Finally execute step S4：It is steamed in oxide molecule beam epitaxy system using Ir simple substance target evaporation source, Sr simple substance target
It rises and oxygen source, in the substrate surface epitaxial growth Ca-Ti ore type SrIrO3Monocrystal thin films material.
Specifically, the substrate is not necessarily to take out after being made annealing treatment in the oxide molecule beam epitaxy system,
Epitaxial manufacture process can directly be carried out.Epitaxial growth Ca-Ti ore type SrIrO3When monocrystal thin films material, the simple substance line ratio of Sr and Ir
More than or equal to 1.
It should be pointed out that due to SrIrO3In monocrystal thin films material, the atomic ratio of Sr and Ir are 1:1, therefore usually recognize
It should also be controlled 1 for the simple substance line of Sr and Ir:1, and actually have been found that, it is obtained when the simple substance line of Sr and Ir are than being greater than 1
SrIrO3Monocrystal thin films quality of materials is higher.This may be since the adsorption capacity of Sr is less than the reason of Ir, since Ir is easier to inhale
Substrate is invested, dosage can slightly be reduced a bit.As an example, the simple substance line ratio of Sr and Ir is 1.001~1.1, this implementation
In example, the simple substance line of Sr and Ir are than preferably 1.01.
Stable simple substance line can be complete by the corresponding control unit in the oxide molecule beam epitaxy system than control
At being mature technology, details are not described herein again for detailed process.
Specifically, epitaxial growth Ca-Ti ore type SrIrO3When monocrystal thin films material, the oxygen source is ozone, the ozone
Air pressure is 1E-7~1E-5Torr, preferably 2E-6Torr；Underlayer temperature is 500~600 DEG C, preferably 560 DEG C.
The present invention utilize oxide molecule beam epitaxy technology, by ultrahigh vacuum device hardware, simple substance evaporation source selection,
Stable evaporation source line control, the selection of substrate, the processing of substrate, Film synthesis parameter stability contorting, can be prepared into
To the Ca-Ti ore type SrIrO of high quality3Monocrystal thin films material.
The Ca-Ti ore type SrIrO that will be prepared under several different technical parameters below3The test knot of monocrystal thin films material
Fruit compares.Characterization method is refletcion high-energy electron diffraction instrument (Reflection High-energy Electron
Diffraction, RHEED).
The Ca-Ti ore type SrIrO that (one) three kind of various substrates is prepared3The RHEED image of monocrystal thin films material.
Fig. 2~Fig. 4 is respectively indicated as LSAT substrate, GdScO under the conditions of same substrate pre-treatment and coextensive3Substrate and
SrTiO3The SrIrO grown on substrate3The RHEED image of film.As shown in Figures 2 and 3, LSAT substrate and GdScO3Substrate is raw
After length, RHEED diffraction fringe spot has irregular miscellaneous spot (white dashed line arrow is signified).And SrTiO3After substrate growth, RHEED
Diffraction fringe clearly becomes clear without miscellaneous phase.
As it can be seen that SrTiO3Substrate is optimal substrate, the Ca-Ti ore type SrIrO to grow out thereon3Monocrystal thin films quality of materials
It is best.
(2) SrTiO3The Ca-Ti ore type SrIrO that substrate is prepared through different pretreatments3The RHEED of monocrystal thin films material
Image.
Fig. 5~Fig. 6 is respectively indicated as SrTiO under the conditions of coextensive3SrIrO of the substrate through different annealing pretreatment growths3
The RHEED image of film.Wherein, Fig. 5 is shown as the SrTiO without leading to oxygen and high annealing3The SrIrO grown on substrate3It is thin
The RHEED image of film is (only by SrTiO3Silicon makes its surface water evaporation to 100 DEG C), RHEED diffraction item as the result is shown
Line spot is relatively fuzzy.Fig. 6 is shown pass by the SrTiO of logical oxygen and the high temperature anneal (700 DEG C of heat preservation half an hour)3On substrate
The SrIrO of growth3The RHEED image of film, RHEED as the result is shown diffraction image be more clear it is bright.
As it can be seen that the annealing of substrate pretreatment is also critically important in addition to cleaning pre-processes, substrate surface can be with by defect repair
The higher Ca-Ti ore type SrIrO of quality is prepared3Monocrystal thin films material.
(3) SrTiO3The Ca-Ti ore type SrIrO that substrate is prepared through different epitaxial conditions3Monocrystal thin films material
RHEED image.
Fig. 7~Fig. 9 be respectively indicated as epitaxial growth temperature it is excessively high when (620~630 DEG C), epitaxial growth temperature it is too low when
(560 DEG C) SrTiO when (500 DEG C or so) and epitaxial growth temperature are more excellent3The SrIrO grown on substrate3The RHEED image of film.
As shown in fig. 7, having miscellaneous phase (arrow meaning bright spot) on RHEED image when growth temperature is excessively high；As shown in figure 8, growth temperature mistake
It is low to be, also there is miscellaneous phase (arrow institute finger ring shape miscellaneous spot) on RHEED image；And as shown in figure 9, RHEED schemes when growth temperature is suitable
As diffraction fringe clearly becomes clear without miscellaneous phase.
As it can be seen that selecting suitable epitaxial temperature to the Ca-Ti ore type SrIrO being prepared3Monocrystal thin films material is also very
It is important.
In conclusion the present invention utilizes oxide molecule beam epitaxy technology, evaporated by ultrahigh vacuum device hardware, simple substance
The selection in source, stable evaporation source line control, the selection of substrate, the processing of substrate, Film synthesis parameter stability contorting,
The Ca-Ti ore type SrIrO of high quality is prepared3Monocrystal thin films material.The monocrystal thin films possess very big excellent compared to body material
Gesture, the SrIrO of epitaxial growth3Monocrystal thin films have stable state perovskite structure, this for further scientific research extremely
It closes important；Secondly, the epitaxial film surface grown under ultrahigh vacuum is natural smooth cleavage surface, it is advantageously implemented electronic structure
Test；Again, ultrahigh vacuum further ensures the cleanliness of sample surfaces, goes on smoothly test more.So
The present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (11)
1. a kind of Ca-Ti ore type SrIrO3The preparation method of monocrystal thin films material, which is characterized in that include the following steps：
S1：One Ca-Ti ore type substrate is provided；
S2：The substrate is started the cleaning processing；
S3：The substrate is made annealing treatment；
S4：Ir simple substance target evaporation source, the simple substance target evaporation source Sr and oxygen source are used in oxide molecule beam epitaxy system, described
Substrate surface epitaxial growth Ca-Ti ore type SrIrO3Monocrystal thin films material, the underlayer temperature are 500~600 DEG C；Epitaxial growth
Ca-Ti ore type SrIrO3When monocrystal thin films material, the simple substance line ratio of Sr and Ir are greater than 1.
2. Ca-Ti ore type SrIrO according to claim 13The preparation method of monocrystal thin films material, it is characterised in that：It is described
Ca-Ti ore type substrate is LSAT, GdScO3Or SrTiO3。
3. Ca-Ti ore type SrIrO according to claim 13The preparation method of monocrystal thin films material, it is characterised in that：In institute
It states in step S2, the organic impurities of the substrate surface absorption is removed using acetone.
4. Ca-Ti ore type SrIrO according to claim 13The preparation method of monocrystal thin films material, it is characterised in that：It is described
Step S2 is comprised the following processes：The substrate is sequentially placed into acetone, alcohol, is cleaned by ultrasonic in isopropanol.
5. Ca-Ti ore type SrIrO according to claim 43The preparation method of monocrystal thin films material, it is characterised in that：By institute
State that substrate is put into acetone, alcohol, the time being cleaned by ultrasonic in isopropanol are 1~60 minute.
6. Ca-Ti ore type SrIrO according to claim 43The preparation method of monocrystal thin films material, it is characterised in that：Most
After latter step ultrasonic cleaning, the substrate is dried up using nitrogen.
7. Ca-Ti ore type SrIrO according to claim 13The preparation method of monocrystal thin films material, it is characterised in that：In institute
It states in step S3, the annealing comprises the following processes：
The substrate is passed to vacuum chamber, and is heated to the first temperature；
Oxygen is passed through in the vacuum chamber again, and continues to be heated to second temperature；The second temperature is higher than the first temperature；
The substrate is kept the temperature into preset time under the second temperature.
8. Ca-Ti ore type SrIrO according to claim 73The preparation method of monocrystal thin films material, it is characterised in that：It is described
First temperature is 100~400 DEG C, and the second temperature is 500~900 DEG C, and the preset time is 5~100 minutes.
9. Ca-Ti ore type SrIrO according to claim 13The preparation method of monocrystal thin films material, it is characterised in that：Sr with
The simple substance line ratio of Ir is 1.001~1.1.
10. Ca-Ti ore type SrIrO according to claim 13The preparation method of monocrystal thin films material, it is characterised in that：In institute
It states in step S4, the oxygen source is ozone.
11. Ca-Ti ore type SrIrO according to claim 103The preparation method of monocrystal thin films material, it is characterised in that：Outside
Prolong in growth course, the air pressure of the ozone is 1 × 10-7~1 × 10-5Torr。
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| CN105957970B (en) * | 2016-05-30 | 2018-03-30 | 哈尔滨工业大学 | A kind of preparation method of large size single crystal perovskite thin film |
| US10516098B2 (en) * | 2016-12-22 | 2019-12-24 | Purdue Research Foundation | Apparatus for spin injection enhancement and method of making the same |
| CN110265191B (en) * | 2019-06-14 | 2021-09-14 | 清华大学 | SrTiO with atomically flat surface3Multi-crystal-boundary substrate and preparation method thereof |
| CN110438567A (en) * | 2019-07-22 | 2019-11-12 | 中国科学院上海微系统与信息技术研究所 | A kind of preparation method of semiconductor selenium bismuth oxide single crystal thin-film material |
| CN113550011A (en) * | 2020-04-24 | 2021-10-26 | 中国科学院物理研究所 | Method for changing electrical property of single crystal perovskite oxide thin film material |
| CN115506025B (en) * | 2021-06-23 | 2024-02-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | Hole type SrTiO 3 Material, preparation method and application thereof |
| CN114000190B (en) * | 2021-10-28 | 2023-02-17 | 西湖大学 | Method for realizing high-flux film growth by adopting temperature gradient |
| CN114695679B (en) * | 2022-03-08 | 2023-09-12 | 电子科技大学 | Method for preparing perovskite film capable of self-repairing mechanical damage |
| CN114774844A (en) * | 2022-03-31 | 2022-07-22 | 清华大学 | Method for regulating and controlling flat surface components of thin film at atomic level |
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| JPH0586477A (en) * | 1991-09-27 | 1993-04-06 | Tdk Corp | Manufacture of perovskite type oxide ultrathin film |
| JP4630986B2 (en) * | 2003-02-24 | 2011-02-09 | 学校法人早稲田大学 | β-Ga2O3-based single crystal growth method |
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